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FLU10ZME1 SUMITOMO ELECTRIC Device Innovations Inc Component Distributors, Inc. 200 - -

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flu10 datasheet (4)

Part Manufacturer Description Type PDF
FLU10XM Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
FLU10XM-E1 Fujitsu FET: P Channel: ID 0.45 A Original PDF
FLU10ZM Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
FLU10ZM-E1 Fujitsu Original PDF

flu10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
FLL105

Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 FLK202 "FLL105" FLL-300-1
Text: FLU17 % · FLL171 FLC161 FLC103 FLK202 FLK102 c o R106 30 FLU10 · · FLL101 FLC091


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PDF FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 FLK202 "FLL105" FLL-300-1
1998 - Not Available

Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm (Typ , ) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , . Any lot failure shall be 100% retested. Edition 1.2 July 1999 1 FLU10XM L-Band Medium & , (%) 0 Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High , -48.5 .886 -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM"


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PDF FLU10XM FLU10XM FCSI0598M200
BPW14A

Abstract: BPW14 BPW14C BPW13 FLU10 BPW 14 A bpw14b BPW13A bpw13b BPW13C
Text: 4.5 PF Switching characteristics Vs - 5 V, /c - 5 mA, flu=100 Q, Xp«= 950 nm, see test circuit


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PDF IAL66 13-flat 14-lens 0D0fi37b BPW13 BPW14 BPW14A BPW14C BPW13 FLU10 BPW 14 A bpw14b BPW13A bpw13b BPW13C
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: FLC103WG FLK022WG FLK052WG C053 C103 K022 K052 Case Style "WG" FLU10XM FLU17XM FLU35XM Y U " Case


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PDF
2013 - FLL57MK

Abstract: ELM7785-60F FLL357ME fll177 FLL357 fll600iq-2 FLC057WG FLK027WG flc107 fll57
Text: FLU35ZME1 FLU17XM FLU17ZME1 FLU10XM FLU10ZME1 SMT Devices 1 0.1 1.0 Applications: 1.5 LTE/WCDMA , 42.5 42.5 42.5 44.5 44.5 44.5 45.5 48 49.0 *2 Specifications Part Number FLU10XM FLU10ZME1 FLU17XM


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PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL357ME fll177 FLL357 FLC057WG FLK027WG flc107 fll57
2004 - FLU10XM

Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , . Any lot failure shall be 100% retested. Edition 1.3 October 2004 1 FLU10XM L-Band Medium & , Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High Power GaAs FET , -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic


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PDF FLU10XM FLU10XM V4888
MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: GaAs L / S Band Medium Power HJ FET (See-A part # for Pb-free) Fujitsu FLU10XM NE651R479A Closest


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PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
1998 - FLU10XM

Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , failure shall be 100% retested. Edition 1.2 July 1999 1 FLU10XM L-Band Medium & High Power , (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High Power GaAs FET S11 S22 , Download S-Parameters, click here 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM"


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PDF FLU10XM FLU10XM FCSI0598M200
1998 - Not Available

Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FETs FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in , Compression Point Data Sheets 152 1998 Microwave Databook FLU10XM L-Band Medium & High Power , FLU10XM L-Band Medium & High Power GaAs FETs +j50 +j25 +j100 0.5 GHz 1 S11 S22 +90¡ S21 S12 , Sheets 154 1998 Microwave Databook FLU10XM L-Band Medium & High Power GaAs FETs Case Style


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PDF FLU10XM FLU10XM
FLU10XM

Abstract: No abstract text available
Text: ^^^^^^^^ FLU10XM _ L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB , (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base , % retested. Edition 1.2 July 1999 FUJITSU FLU10XM L-Band Medium & High Power GaAs F ET POWER DERATING , œ“ * * * * * * 'ladd 8 10 12 14 16 18 Input Power (dBm) 50 40 30 20 10 TD T3 CO P" Fujfrsu FLU10XM , FLU10XM L-Band Medium & High Power GaAs F ET Case Style "XM" Metal-Ceramic Hermetic Package (0.150


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PDF FLU10XM FLU10XM FCSI0598M200
2003 - FLU10

Abstract: fujitsu flu fujitsu gaas fet L-band pae100
Text: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm(typ.) High , FLU10ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using , 2003 1 FLU10ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Total Power , FLU10ZM L-Band Medium & High Power GaAs FET S-PARAMETER +50 j 10 25 50 +10j 1.0 +2 50j , -91.11 -101.36 -114.34 -128.63 -153.74 179.95 161.06 146.70 FLU10ZM L-Band Medium & High


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PDF FLU10ZM FLU10ZM FCSI0202M200 FLU10 fujitsu flu fujitsu gaas fet L-band pae100
2004 - Not Available

Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in , October 2004 1 FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN , ) 40 FLU10XM L-Band Medium & High Power GaAs FET S11 S22 +j100 0.5 GHz 1 +j50 +j25 +90° , -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic


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PDF FLU10XM FLU10XM
IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: No file text available


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PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note CS98E1V6R800-K41D ISS1B1 CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: FSX52X/WF FSU01LG FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL105MK FLL120MK FLL200IB


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PDF
FLL55

Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 fll171 flu10 fll300ip-2 FLU10XM FLL351ME
Text: MK MK IB IB IB IL IL IL IP WG WF WG WF MH MH MG Frequency Band · FLU10XM ·FLU17XM ·FLU35XM


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PDF FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 fll171 flu10 fll300ip-2 FLU10XM
1998 - Not Available

Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in , FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 5 Total Power Dissipation (W) 4 3 2 1 , hadd (%) 40 FLU10XM L-Band Medium & High Power GaAs FET +j50 +j25 +j100 0.5 GHz 1 S11 S22 , -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic


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PDF FLU10XM FLU10XM FCSI0598M200
Not Available

Abstract: No abstract text available
Text: FLU10ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm(typ , FLU10ZME1 is a GaAs FET designed for base station and CPE application up to a 3.0GHz frequency range. This , FLU10ZME1 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Total Power Dissipation [W , 2 P ow e r Adde d Efficie ncy [%] 32 FLU10ZME1 L-Band Medium & High Power GaAs FET , -52.39 -78.22 -91.11 -101.36 -114.34 -128.63 -153.74 179.95 161.06 146.70 FLU10ZME1 L-Band


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PDF FLU10ZME1 FLU10ZME1 25deg
BAW75

Abstract: BAY60 BAY63
Text: recovery time (JF = /R = 10 mA; recovery to 1 mA) Reverse recovery time (/F = 10 mA; l/H = 6 V; flu=100Q


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PDF Q60201-Y BAY60 BAW75 BAY60 BAY63
2000 - FLU10XM

Abstract: FLU10
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , 1999 1 FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs , ) 2 18 add (%) 0 Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM , -48.5 .886 -164.5 Download S-Parameters, click here 3 FLU10XM L-Band Medium & High


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PDF FLU10XM FLU10XM VGS794 FLU10
2004 - Not Available

Abstract: No abstract text available
Text: FLU10ZM FEATURES High Output Power: P1dB=29.5dBm(typ.) High Gain: G1dB=13.0dB(typ.) Low Cost , FLU10ZM is a GaAs FET designed for base station and CPE application up to a 3.0GHz frequency range. This , : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5k) Edition 1.2 Jan 2004 1 FLU10ZM L-Band Medium & , ow e r Adde d Efficie ncy [%] 30 80 FLU10ZM L-Band Medium & High Power GaAs FET , ANG -52.39 -78.22 -91.11 -101.36 -114.34 -128.63 -153.74 179.95 161.06 146.70 3 FLU10ZM L-Band


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PDF FLU10ZM FLU10ZM
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