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1995 - 70NS120

Abstract: flash memory 5v 16m LH28F016SA DESIGNING WITH SHARP FLASH MEMORY 28F016SV 56TSOP E28F008SA LH28F016SU LH28F0800SU AMD flash ETOX
Text: Flash Memory . SHARP's 5 V, 16M Flash is similar to Intel's Smart Voltage 16M offering, except for a , Flash Memory Application Note DESIGNING WITH SHARP FLASH MEMORY Vijay Desai, Field , memory components as a part of non-volatile memory family. The first generation Flash Memory components are dual voltage (5 V/12 V) supply and second generation Flash Memory is a revolutionary , and 16M Dual-Voltage Flash Memories are 100% pin and command set compatible with Intel's Flash TM


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PDF E28F008SA E28F016SA SMT95014 70NS120 flash memory 5v 16m LH28F016SA DESIGNING WITH SHARP FLASH MEMORY 28F016SV 56TSOP E28F008SA LH28F016SU LH28F0800SU AMD flash ETOX
LH28F128SPHTD-PTL12

Abstract: 56TSOP lh28f800bvhe-tv85 lh5116h10 LH28F320SKTD-L70 LRS1826A TV85 LH28F008SC LH28F160S5T-L70A LH52256CHN-70LL
Text: Memory Product Selector Guide 8M AND 16M SYMMETRICAL FLASH DENSITY ORG. PART NUMBER READ , 5V TEMP.* 100 24DIP SPEED (ns) 28TSOP Memory Product Selector Guide FLASH CARDS , Industrial Temperature Range: -40°C to 85°C 3V 3 V or 5 V 56SSOP 5V 5V Memory Product , °C I = Industrial Temperature Range: -40°C to 85°C Memory Product Selector Guide 8M AND 16M BOOT , ORGANIZATION 16M / 2M Flash Boot & SRAM (×16) 16M / 4M Flash Boot & SRAM (×16) PART NUMBER


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PDF LH28F008SCHT-L85 LH28F008SCT-L12 40TSOP LH28F008SAT-85 LH28F008SCT-L85 LH28F008SCN-L85 LH28F008SAR-85 LH28F008SAHT-85 LH28F008SAN-85 ID242K01 LH28F128SPHTD-PTL12 56TSOP lh28f800bvhe-tv85 lh5116h10 LH28F320SKTD-L70 LRS1826A TV85 LH28F008SC LH28F160S5T-L70A LH52256CHN-70LL
lh28f800bvhe-tv85

Abstract: LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide
Text: Memory Product Selector Guide SYMMETRICAL FLASH DENSITY PRODUCT FAMILY ORG. PART NUMBER , LH28F016SCHT-L95 LH28F160S3T-L10A LH28F160S3HT-L10A LH28F160S5T-L70A 16M 3V 5V ×8/×16 , 32M 5V 56TSOP LH28F160S5HT-L70 King Cobra 3 V or 5 V 56TSOP Memory Product Selector Guide 8M AND 16M BOOT BLOCK FLASH DENSITY ORG. PACKAGE READ VOLTAGE PROGRAM , °C Memory Product Selector Guide FLASH CARDS DENSITY PART NUMBER COMPONENT INSIDE ACCESS TIME


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PDF LH28F008SCT-L12 40TSOP LH28F008SAT-85 LH28F008SAHT-85 LH28F008SAN-85 LH28F008SAN-12 44SOP LH28F008SCHT-L85 LH28F008SCT-L85 lh28f800bvhe-tv85 LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide
1998 - electronique package

Abstract: electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit
Text: Introduction 5V ­only Flash Memory Devices 3V­only Flash Memory Devices Dual-operation 3V Flash Memory Devices , Memory 5V -only Flash Memory Devices Fujitsu Microelectronics has already developed 2Mb, 4Mb, 8Mb and , All trademarks are acknowledged. algorithms, 2 5V -only Flash Memory Devices ­ MBM29F series , application (HDD usage) 8 PC Flash Memory Cards PCMCIA Standard 5V -only PC Flash Memory Cards - , picture 9 Flash Memory Miniature Flash Cards 5V -only Flash Miniature Cards - MB98C81xx3 series


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PDF D-85737 S-19268 FEDE-FLASH-0998 electronique package electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit
1997 - R-PDSO-G48 Package

Abstract: 28F1600 flash memory 5v 16M-bit 48 TSOP 48-PIN TMS28F1600B TMS28F1600T
Text: 16M -BIT (1M BY 16, 2M BY 8) CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY SMJS836 ­ , OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY SMJS836 ­ JANUARY 1997 5 TMS28F1600T, TMS28F1600B 16M , , TMS28F1600B 16M -BIT (1M BY 16, 2M BY 8) CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY SMJS836 ­ , 16M -BIT (1M BY 16, 2M BY 8) CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY SMJS836 ­ , FLASH MEMORY SMJS836 ­ JANUARY 1997 D D D D D D D D Auto-Select VCC and VPP Voltages


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PDF TMS28F1600T, TMS28F1600B 16M-BIT SMJS836 16K-Byte R-PDSO-G48 Package 28F1600 flash memory 5v 16M-bit 48 TSOP 48-PIN TMS28F1600B TMS28F1600T
1997 - 3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Text: 32 HB56A1632 5V SIMM 72 16M (x1) based Memory Shortform, x 36 Fast Page Mode DRAM , Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS Application , HB56U132 4M (x4) based 5V 60, 70 SIMM 72 16M (x16) based / 1M x 32 HB56H132 1k cycles 4M (x4) based / HB56U232 60, 70, 80 2k cycles 5V SIMM 72 2M x 32 16M (x16) based / HB56H232 60, 70 1k cycles 16M (x4) based / 60, 70, 80 SIMM 72 4M x 32 HB56U432 5V 2k cycles 16M (x4) based / 60, 70, 80 SIMM


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PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
160X80

Abstract: lcd driver 160x80 SNC700 snl310 programming guide 128X64 LCD LCD 128x64 16MHZ SNC710 SNL310 VX50
Text: Board Connect to SONiX flash 32 board to simulate external memory Connector function SONiX , Write Control ex: ICE Memory Board (SRAM + FLASH ROM) EVW (Lower side): ICE Memory Board without , RESET ICE, Flash Reset button. Enable Flash Flash Power input. OPEN: Enable Flash memory , , SNC7x5 EV board, SNC710 EV board, 32M/64M Flash board download through S9KC4ICE flash memory , flash programming interface of S9KC4ICE for programming the on-board flash memory of SNC7x5 EV board


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PDF SNL310 SNC700 160X80 lcd driver 160x80 snl310 programming guide 128X64 LCD LCD 128x64 16MHZ SNC710 VX50
1998 - 3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: Electrically erasable Flash Memory ( 5V ONLY) Flash Memory (3V ONLY) Flash Memory (Supper Low Voltage , Dual-Power-Supply Flash Memory 5V Single Power Supply Flash Memory SRAM Memory Cards (88-pin) Miniature , type *3: SPD with Serial EEPROM *4: Height 1.1 inch To Top / Lineup / Index Flash Memory ( 5V ONLY) (1) Supply Voltage Flash Memory Capacity Organization 5V ONLY 2M-bit 256K×8 , Flash Memory 16M -bit 1M×8 512K×16 2M×8 1M×16 150ns. Can be automatically erased by


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PDF 16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
LA 8512

Abstract: samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory
Text: 16M Byte Word Wide 2nd Gen. and 64M DRAM. 8 9 KM 4 AA SAMSUNG Memory DRAM Organization , : Pallel EEPROM : Flash Memory SPEED 9 : 90ns 10 : 100ns 12 : 120ns 15 : 150ns 20 : 200ns BLANK , X Flash Memory NAND Type (CMOS) Density 16000 : 16MBit. 32000 : 32MBit. 64000 : 64MBit , MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM FUNCTION GUIDE KM DRAM ORGANIZATION · 1: X1 · 4: X4 · 8: X8 · 9: X9 ·16: X16 · 18: X18 · 32: x32 PROCESS & POWER ·C: CMOS, 5V ·V: CMOS, 3.3V


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PDF 100ns 16Bit 32Blt 18Bit 36Bit 200ns 250ns LA 8512 samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory
AP-006-PT-E

Abstract: LH28F800BJ LH28F800SG DSA00339271 LH28F400
Text: /off and on reset 2.2.2 5V Single power supply flash memory . 6 with RST#(RP , cleared. 2.2.2 5V Single power supply flash memory 5V Single power supply flash memory is a conventional flash memory without the power supply voltage detection circuit. Table 4 lists the 5V single , . function Table 4. 5V Single power supply flash memory Symmetrical Block WP setting Capacity , AP-006-PT-E APPLICATION NOTE Data Protection Method of SHARP Flash Memory Sep. 21, 2001


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PDF AP-006-PT-E AP-006-PT-E LH28F800BJ LH28F800SG DSA00339271 LH28F400
2003 - SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: QDRllTM/DDRll (333-400MHZ) (400-666Mbps)* Flash Memory 16M LW SSRAM Memory for General , Random Access Memory Fast Static Random Access Memory Multi chip package EEPROM Flash Card Flash Memory High-added-value memory gets eve n faster With the rapid advances being made in the , Flash Memory Low power Static Random Access Memory 256kb, 1Mb, 2Mb Series Fast Static Random Access Memory Low-Power SRAM Package compatibility and miniaturization Flash Card Low-Power


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PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
2000 - sandisk micro sd card pin

Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Text: ( ) : Option AND DINOR 16M 256M Flash Memory *H=LL MITSUBISHI ELECTRIC 3 ULSI Memory Series , (Flash+SRAM) 6. Flash Memory 7. AND Flash Memory 8. Module 9. IC CARD 1 9 31 39 43 63 65 69 77 NOTE NEW REV NEW INFORMATION REVISION ULSI Memory Series RAM/MCP/ FLASH New Data Package General , PLANNING PRODUCTION DEVELOPMENT MEMORY IC (DRAM,SRAM, FLASH ,MODULE,PC CARD) DIV. SYSTEM LSI (MCU,ASIC , Memory Series RAM/MCP/ FLASH New Data Package General L-11004-0J MITSUBISHI ELECTRIC MITSUBISHI


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PDF L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
2000 - L24002

Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Text: Mitsubishi Fast SRAM Technical Direction 4M Fast SRAM Comparison MCP(Flash+SRAM) Flash Memory AND Flash Memory Module IC CARD Features of Mitsubishi MCP Loaded DINOR Flash Memory Features of Mitsubishi DINOR Flash Memory Mitsubishi "AND" Flash Memory Mitsubishi Memory Module Technical Direction Mitsubishi , DEVELOPMENT MEMORY IC (DRAM,SRAM, FLASH ,MODULE,PC CARD) DIV. SYSTEM LSI (MCU,ASIC,eRAM) POWER DEVICES HF , Flash Memory *H=LL MITSUBISHI ELECTRIC L-11008-0J MITSUBISHI Memory Module (1) Density


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PDF L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
2006 - IC1210-m128LQ

Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Text: ISSI ® Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are not able to commit to long term support for these memory products, we at ISSI can. In fact, from the very beginning, long term support of memory products has been the foundation on which we built our memory business


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1998 - PANASONIC sram card 34 pin

Abstract: BN-04MHFCC BN-512HSR Panasonic IC memory card BN-02MHFCC BN-04MHF3C panasonic ic BN-256HSR BN-04MHF4C 12v rechargable lithium battery
Text: available separately. Note 3) Flash memory cards with 8M/ 16M -bit chips are with attribute memory (EEPROM , (3.3V or 5V ) Specification Table SmartMediaTM Type Operating Voltage Memory capacity (bytes) 5V , specifications. IC Memory Cards Handbook, Page 7 August 1998 ATA FLASH PC CARD - CONTINUED Overview , . PC-card ATA flash memory cards comply with the PC Card Standard of PCMCIA (Personal Computer Memory Card , semiconductor disk card using flash memory as the storage medium. Because the product does not have any


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PDF 250ns 150mA 8M/16M-bit PANASONIC sram card 34 pin BN-04MHFCC BN-512HSR Panasonic IC memory card BN-02MHFCC BN-04MHF3C panasonic ic BN-256HSR BN-04MHF4C 12v rechargable lithium battery
M8512

Abstract: samsung dram AM8512 TSOP 56 Package nand memory
Text: Flash Memory NAND Type (CMOS) Package Density 16000 32000 64000 16M Bit. 32M Bit. 64M Bit. T : TS O P , . SAMSUNG Memory 2. Module 3. Memory Type & Edge Connector -1 . FLASH - 2 , KM 23 X XXX XX X X XX - XX MEMORY DEVICE TYPE · 23 : MASK ROM PROCESS & POWER C : CMOS, 5V · V , MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM FUNCTION GUIDE KM DRAM ORGANIZATION · 1: X1 · , (TR: R everse) TSOP I (VR: R everse) · 32: x32 PROCESS & POWER ·C : CMOS, 5V ·V : CMOS, 3.3V


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PDF 100ns 150ns 16Bit 18Bit M8512 samsung dram AM8512 TSOP 56 Package nand memory
1999 - SmartDie

Abstract: IMC016FLSC PLCC 44 intel package dimensions 28f800b5 flash ftl intel 28F008B3 28F016B3 28F032B3 IMC008FLSc 28F160F3
Text: Flash Memory Quick Reference Guide ion 7 Vers '99 Mar. Intel package and tools lineup Intel Package and Tools Lineup · Software Builder­Application software for Intel® Flash memory products. · Online Utilities­Understand how Intel® Flash memory products will perform in your application , engine that lists Intel® Flash memory products based on your requirements. Product Selector also , production process manufacturing tips. · Programming Tools Information­On-board and Off-board Flash memory


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PDF USA/0399/10K/MS SmartDie IMC016FLSC PLCC 44 intel package dimensions 28f800b5 flash ftl intel 28F008B3 28F016B3 28F032B3 IMC008FLSc 28F160F3
1998 - SmartDie

Abstract: 28F008B3 28F016B3 28F032B3 28F032C3 28F160B3 28F160F3 28F320B3 28F400B3 28F800B3
Text: Flash Memory Quick Reference Guide ion 5 Vers '98 Aug. Intel package lineup Intel Package , .) Flash Memory Components for New Designs Density Product Organization Access Time (ns) Temp , Block Flash Memory 32 Mb 28F320C3a 2M × 16 E E E E E E E E E E E E E E E E E , /48 48 48 5 Volt Boot Block Flash Memory 4 Mb 28F400B5 28F004B5 2 Mb 28F200B5 1 Mb , FIRST GENERATION FLASH MEMORY COMPONENTS-Bulk Erase 2 Mb 1 Mb 28F020 28F010 256K × 8 128K × 8


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PDF USA/0898/15K/MS SmartDie 28F008B3 28F016B3 28F032B3 28F032C3 28F160B3 28F160F3 28F320B3 28F400B3 28F800B3
1998 - toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Text: n DRAM MARKET DRAM Market 6 DRAM Market n MAIN MEMORY ROADMAP FOR DESKTOP PC , Synchronous DRAM n 64MB SYNCHRONOUS DRAM (TC59S6404/08/16BFT-80/10) Features - Organization 16M x 4 , 3 3 100MHz 4 2 2 -80 Version meets 100MHz main memory bus. 17 Clock Synchronous DRAM n , (2.5v+/0.25v) DQ Voltage of Power Supply VDDQ= 2, 5v +/-0.2 Fully Synchronous Operation ­ ­ ­ ­ s , MODULES Modules 33 Modules n MEMORY MODULE ORGANIZATION TREND 100% 200pin SDRAM DIMM


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PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
1998 - IS26F160

Abstract: parallel flash 5v 16M-bit
Text: 10K/100K endurance, ten years data retention · Flash Memory for Battery-Operation ­ Single 5V or 3V , IS26F080A IS26F160 IS26F080A IS26F160 ISSI® ISSI 8M-BIT AND 16M -BIT SERIAL FLASH , , audio, or images ­ Removable Serial Flash Module package option · NexFLASH TM Non-volatile Memory , efficient battery use 1 · 8M-bits or 16M -bits of NexFLASH Serial Memory ­ 2,048 or 4,096 sectors of , -bits of Flash memory organized in sectors of 536 bytes each. Each sector is individually addressable


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PDF IS26F080A IS26F160 16M-BIT 10K/100K IS26F080A-3T-R IS26F080A-5T-R 16M-bit IS26F160-3T-R IS26F160 parallel flash 5v 16M-bit
1998 - 28F640J5a

Abstract: iMC016FLSG 28F160B3 IMC016FLSC 9021b iMC008FLSC flash memory 5v 16m SmartDie 28F016B3 28F160F3
Text: 2.7­3.6V or 12V 5V or 12V First Generation Flash Memory Components-Bulk Erase 2 Mb 1 Mb 28F020 , 2.7­3.6V or 12V 5V or 12V First Generation Flash Memory Components-Bulk Erase 2 Mb 1 Mb 28F020 , Flash Memory Quick Reference Guide ion 4 Vers '98 June Flash Memory Components for New , ) 2.7­3.6V VCC VPP Package Number Pins BOOT BLOCK FLASH MEMORY COMPONENTS-High Performance, Low , Equipment (Programming Handlers, Tape and Reel, Lead Inspection Equipment, etc.) Flash Memory Quick


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PDF 28F320C3a 28F032C3a 28F320LSA USA/698/10K/MS 28F640J5a iMC016FLSG 28F160B3 IMC016FLSC 9021b iMC008FLSC flash memory 5v 16m SmartDie 28F016B3 28F160F3
1999 - Not Available

Abstract: No abstract text available
Text: SPACE ELECTRONICS INC. SPACE PRODUCTS 16M X 8-BIT NAND FLASH MEMORY 29F1608RP Y-Gating 2nd , DESCRIPTION: Space Electronics' 29F1608RP (RP for RAD-PAK®) is a 16M (16,777,216) x8bit NAND Flash Memory , ©1999 Space Electronics Inc. All rights reserved. 29F1608RP 16M X 8-BIT NAND FLASH MEMORY , reserved. 29F1608RP 16M X 8-BIT NAND FLASH MEMORY TABLE 3. 29F1608RP RECOMMENDED OPERATING , rights reserved. 29F1608RP 16M X 8-BIT NAND FLASH MEMORY TABLE 6. 29F1608RP CAPACITANCE1,2


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PDF 29F1608RP 528-Byte 99Rev0
transistor a1512

Abstract: sa1512
Text: IS26F080A IS26F160 8M-BIT AND 16M -BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE JU N E 1998 , energy-per-transfer ratio. The IS26F080A and IS26F160 offer8M-bits and 16M -bits of Flash memory organized in sectors , 16M -bits of NexFLASH Serial Memory - 2,048 or 4,096 sectors of 536 bytes each - Simple commands , as fast as 16 MHz - Multi-device cascading, up to 16 devices · Flash Memory for Battery-Operation , provide up to 8M-bits or 16M -bits of non-volatile memory orga nized as 2,048 or 4,096 small sectors of 536


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PDF IS26F080A IS26F160 16M-BIT 16M-bits 10K/100K IS26F080A-3T-R IS26F080A-5T-R IS26F160-3T-R transistor a1512 sa1512
1995 - LH28F016SUT-70

Abstract: LH28F008SA LH28F016SU LH28F16SUT-70
Text: LH28F016SU 16M (1M × 16/2M × 8) 5 V Single Voltage Flash Memory FEATURES DESCRIPTION · , 's LH28F016SU 16M Flash Memory is a revolutionary architecture which enables the design of truly mobile , cost-effective, high-density 3.3 V flash memory . 16M (1M × 16/2M × 8) Flash Memory 1.0 INTRODUCTION The , block lock-bit status. 7-107 16M (1M × 16/2M × 8) Flash Memory LH28F016SU The GSR and BSR , 16M (1M × 16/2M × 8) Flash Memory LH28F016SU 2.1 Lead Descriptions (Continued) Symbol Type


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PDF LH28F016SU 16/2M LH28F016SU 56-Lead 56-pin LH28F016SUT-70 LH28F016SUT-70 LH28F008SA LH28F16SUT-70
1998 - upd23c8000

Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
Text: Memory + SRAM) Density (bits) Flash : 16M SRAM : 2M Flash : 16M SRAM : 2M Flash : 8M SRAM : 2M Flash : 8M , MENU Dynamic RAM Dynamic RAM Module Static RAM Mask ROM Flash Memory COMBO Memory MCP( Flash memory and SRAM) Application Specific Memory INDEX QUESTIONNAIRE Users Manual, Application Notes , Flash MEMORY Access Density (bits) 8M Organization (words × bits) 1024K × 8 1024K × 8 or 512K × 16 , ) 16M synchronous DRAM (Revision B,P) -PC100 compliant 4M synchronous DRAM 2M synchronous DRAM Virtual


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PDF -PC100 compliant64M compliant16M 168-pin 16-bit, upd23c8000 upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
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