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SFH 207

Abstract: No abstract text available
Text: Q62702-P683 Semiconductor Group 379 I fl235b05 00575^4 757 SIEMENS Grenzwerte Maximum Ratings , D* 5.94 x 1012 Semiconductor Group 381 fl235b05 DD57STb 5 2 T SIEMENS Relative


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PDF Q62702-P683 fl235b05 DD57STb flB35bG5 SFH 207
Not Available

Abstract: No abstract text available
Text: lead at the soldering point to the pcb. Semiconductor Group 1462 ■1998-11-01 fl235b05 , fl235b05 0121ÖÖ1 552 ■SIEMENS BFP181R Electrical Characteristics at 7a = 25°C, unless , 50 i2 1) Gms= IS21/S 12I Semiconductor Group 1464 ■1998-11-01 fl235b05 Q121flfl2


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PDF BFP181R 900MHz Q62702-F1685 OT-143R 235fc
Not Available

Abstract: No abstract text available
Text: only minimum supply current. Semiconductor Group 882 9.92 bOE D ■fl235b05 Q0S0774 , – fl235b05 005077b lb2 « S I E G SIEM ENS SAE 81C54 SIEMENS AKTIENiESELLSCHAF - A8 , Block Diagram Semiconductor Group 885 Address Latches A0,A1,A2 LOE D ■fl235b05


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PDF 3535t G05Q773 81C54 Q67100-H8486 P-DIP-16 4096-bit fi53SbDS DDSG77T
EM 257

Abstract: BC257 bc257 siemens BC257B BC258 A235L BC258B BC258A TR BC Q62702-C187
Text: SIE D M fl235b05 ODmsn 3bl «SIEG SIEMENS AKTIENGESELLSCHAF BC257 . BC 259 T-29-2Ï Maximum , Aktiengesellschaft 269 51E D ■fl235b05 GDMlSSa ^Sb «SIEG SIEMENS AKTIEN6ESELLSCHAF BC257 . BC259 Total , Aktiengesellschaft 270 SIE D m fl235b05 0041SS3 fl'iE «SIEG SIEMENS AKTIENGESELLSCHAF BC257 . BC 259 DC


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PDF 853SbDS Q62702-C700 Q62702-C184 Q62702-C206 Q62702-C701 Q62702-C187 Q62702-C188 Q62702-C438 Q62702-C702 Q62702-C192 EM 257 BC257 bc257 siemens BC257B BC258 A235L BC258B BC258A TR BC
Not Available

Abstract: No abstract text available
Text: damped H L Semiconductor Group L H 836 fl235b05 0050721 3M ■SIEG b SIEMENS SIEMENS , A3 5 C 0 T A3 5 C 5 bOE D ■fl235b05 DDSD73D Dbfl « S I E G SIEMENS TCA 305 TCA , SIEMENS AKTIENGESELLSCHAF - Semiconductor Group 839 büE J m fl235b05 0030732


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PDF fl235bDS 0GSD727
Not Available

Abstract: No abstract text available
Text: Semiconductor Group 951 ■■fl235b05 0 1 507^ 105 ■1998-11 -01 SIEMENS BCR 169S , 952 ’ ■fl235b05 01507*17 DM1 ■1998-11-01 SIEMENS BCR 169S DC Current Gain h


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PDF T-363 fl235b05 H35b05
42t sot-23

Abstract: No abstract text available
Text: / ( V = /(/c ) c e o) n = 2 5 ° C , D = 0 1402 Semiconductor Group ■fl235b05 , 1998-11-01 I fl235b05 0121621 DÛÛ â–


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PDF Q62702-F1066 Q62702-F977 OT-23 fl235b05 42t sot-23
Not Available

Abstract: No abstract text available
Text: fl235b05 79 011Û574 002 ■1998-11-01 TLE 4260 SIEM ENS Operating Range Parameter , Input Voltage” fl235b05 Semiconductor Group 80 0110575 Mt 1998-11-01 SIEM ENS TLE , Condition fl235b05 DIIÔSÔO 3GL ■Semiconductor Group 85 1998-11-01 SIEM ENS TLE 4260


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PDF Q67000-A8187 P-T0220-5-1 Q67000-A9044 P-T0220-5-2 P-T0220-5-H/S 011fl5fl4
Not Available

Abstract: No abstract text available
Text: of TX > 85 °C please contact us. Semiconductor Group ■fl235b05 [ ] G5 7 b4 4 429 , . Semiconductor Group fl235b05 432 0DS7b47 10" 10' V — -It Directional characteristics S,eÂ


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PDF fl23Sb05 fl235b05 0DS7b47
Not Available

Abstract: No abstract text available
Text: 3 2.7 601 fl235b05 ODflMHHb OMb 3 07.96 SIEMENS BUZ 80A Electrical , Semiconductor Group 4 5 6 7 8 V 605 fl235b05 0 0 0 4 4 5 0 S77 07.96 SIEMENS


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PDF O-220 C67078-A1309-A3 B23SL BUZ80A 235bGS
Not Available

Abstract: No abstract text available
Text: 10° *- ^ s b ■Semiconductor Group fl235b05 5 10' 5 V 10- ► Kk 00^ 2304 , ) Parameter: tp = 80 jis , = - 25 V ) Parameter: tp = 80 ns, VD = - 25 V S fl235b05 00^2305 T2R , - fl235b05 00^2366 73â 99


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PDF BTS115A O-22QAB C67078-S5004-A2 fl235bG5 C67078-S5004-A8 GPD0SI64 fl235b05
VACUUMSCHMELZE Flux

Abstract: No abstract text available
Text: bOE D ■fl235b05 SIEMENS ODSDbfi? SIEMENS Db? « S I E G AKTI ENGESELLSCHAF 7 ^ 6 5 * -o S Differential Hall Effect Sensor ICs TLE 4920, TLE 4921 TLE 4922 Preliminary , Diagram 1 Semiconductor Group 797 büE D ■fl235b05 □ □5G b^ D bSl TLE , Figure 4 Test Circuit 2 Semiconductor Group 803 Q bOE D ■fl235b05 QOSGb^b 07T â , Group 809 40 bGE T > m fl235b05 0 G5 0 7G E 1T3 ISIEG TLE 4920, TLE 4921 TLE


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PDF fl235b05 VPS05I21 Q67000-A9000 Q67006-A9055 Q67006-A9122 AED01274 Vacomax145 470nF ax145 VACUUMSCHMELZE Flux
Not Available

Abstract: No abstract text available
Text: 10 - Vqs = 20 V, VDS = 0 V 691 fl235b05 Q0fl453b Dflfl 07.96 SIEMENS BUZ 101 , Rqs = 50 i i Semiconductor Group 07.96 692 ■1 fl235b05 ÜÜÔ4537 T IM â


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PDF O-220 BUZ101 C67078-S1350-A2 A235bOS
Not Available

Abstract: No abstract text available
Text: ■fl235b05 Q O T O b i 4 213 ■SIEMENS CGY181 GaAsMMIC Preliminary Datasheet * Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier •Operating voltage range: 2.7 to 6 V •Overall power added efficiency 35 % * Input matched to 50 i2, simple output match , Group 1627 fl235b05 O O l O b b l 01.96 453 20 SIEMENS GaAs MMIC CGY 181 , . Semiconductor Group 1633 fl235b05 O O l O bb ? 171 01.96


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PDF fl235b05 CGY181 Q68000-A8883
A1019

Abstract: A1019 TRANSISTOR DIODE BUZ 94 BUZ94 TC-130-W
Text: C - I EC climatic category, DIN IEC 68-1 55/150/56 1) See chapter Package Outlines. fl235b05 , -60-40-20 0 20 40 60 80 100120 °C 160 Semiconductor Group fl235b05 DOhßObl STI 484 SIEMENS BUZ 94


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PDF O-204 C67078-A1019-A2 fl235b05 623StiOS 0235bG5 A1019 A1019 TRANSISTOR DIODE BUZ 94 BUZ94 TC-130-W
Not Available

Abstract: No abstract text available
Text: fl235b05 0 0 64 4 1 0 ^ 0 4 07.96 SIEMENS BUZ 77 A Electrical Characteristics, at 7] = 25 , 56 9 fl235b05 07.96 00Ö4414 S3b SIEMENS BUZ 77 A Gate threshold voltage


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PDF O-220 C67078-S1320-A3 10-------V fl235bD5
Not Available

Abstract: No abstract text available
Text: h V = 30V, Vqs = 10V, /q = 3 A 'dd Rq s = 50£i ■Data Book fl235b05 0133322 1^2 B , ® 10° fl235b05 D3.3332M T b S Data Book 602 06.99 BUZ 73 Infineon technologieÂ


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PDF O-220 C67078-S1317-A2 0235bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T
023SbDS

Abstract: No abstract text available
Text: ns -60 min. max. Unit Note Semiconductor Group ' 41 1998-10-01 fl235b05 011=5043 , 1 DRAM Semiconductor Group 46 1998-10-01 fl235b05 011=5046 3T3 SIEM ENS , SIEM ENS HYB 514100BJ-50/-60 4M X 1 DRAM Semiconductor Group 55 1998-10-01 fl235b05


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PDF 514100BJ-50/-60 0235bD5 P-SOJ-26 5141OOBJ-50/-60 023SbDS
siemens igbt BSM 150 gb 100 d

Abstract: siemens igbt BSM 150 Gb 160 d siemens igbt BSM 100 gb DDMS677 GG45 SIEMENS VF 100 200AH tt200a
Text: bOE D ■fl235b05 DDMS677 b3fl «SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 100 GB 100 D BSM 100 , Semiconductor Group 241 bOE ]> ■fl235b05 0a45fl7fl 574 SIEMENS SIEMENS AKTIENGESELLSCHAF ISIEC BSM 100


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PDF 23SLGS 2x135 BSM100 C67076-A2103-A2 C67076-A2004-A2 siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d siemens igbt BSM 100 gb DDMS677 GG45 SIEMENS VF 100 200AH tt200a
Not Available

Abstract: No abstract text available
Text: .7 mm. Semiconductor Group 335 '■fl235b05 0120333 3TÔ ■1998-11-01 BAT


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PDF 14-099R Q62702-A0042 14-099R OT-143 EHA07012 fl535bQ5
Not Available

Abstract: No abstract text available
Text: 0.1 0.2 0.5 0.3 - - 0.5 22 - 0.05 0.05 - fl235b05 Semiconductor Group , fl235b05 Semiconductor Group 23 V □□'Ì231S TTb BTS 114A SIEMENS Max. power


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PDF BTS114A O-220AB C67078-S5000-A2 023SbDS E3044 E3045A C67078-S5000-A11
Not Available

Abstract: No abstract text available
Text: I 1 1 10001250 1500 fl235b05 00002=13 431 ■V ► VUp 2000 0 5 .9 6 , fl235b05 DOñOE'iM 37fi 0 5 .9 6 SIEMENS BSM 50 GB 170 DN2 Forward characteristics of fast


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PDF C67070-A2701-A67 fl235b05 S35bOS 235b05 00602Tb
BTS114

Abstract: No abstract text available
Text: operating area / D= /(V 'D ) S Parameter: D = 0.01, Tc = 25 "C ^S D ~ ^S D fl235b05 DDSMSSà , fl235b05 DGSHSST ‘iflO ■h 6-58 BTS114 SIEMENS Not for new design Continous drain


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PDF BTS114 O-22QAB C67078-A5000-A3 235L05 C67078-A5000-A5 E3045 C67078-A5000-A6 E3044 BTS114
BTS149

Abstract: siemens relay AN3110
Text: drain voltage Mn = 0 V, -lD = 5*19 A, ip = 300 ms vsd 1.1 — V ■I fl235b05 GOieMTS 251 , integrating measurement. ■fl235b05 0015473 llfl Semiconductor Group 184 This Material Copyrighted By Its


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PDF BTS149 053ShDS DD1S47S 500ii 623SbGS 23SbOS BTS149 siemens relay AN3110
BTS 133

Abstract: diode zener ZD 153 light sensor siemens
Text:  fl235b05 00012=12 412 SIEMENS HITFET® BTS 133 Smart Lowside Power Switch Product Summary Continious drain source voltage Vds 60 V On-state resistance flbs(on) 50 mQ Current limitation /D(lim) 21 A Load current (ISO) to(iso) 7 A Clamping energy Eas 700 mJ Features • Logic Level Input • Input protection (ESD) • Thermal shutdown • Overload protection • Short circuit protection â , By Its Respective Manufacturer ■fl235b05 OÜÖISTH EbS SIEMENS BTS 133 Electrical


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PDF fl235b05 fl23SbDS Q67060-S6501-A2 CPT05155 T0220 E3045A Q67060-S6501 BTS 133 diode zener ZD 153 light sensor siemens
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