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transistor 626

Abstract: BU626A transistor d 2213 Q68000-A4984
Text: >15 - fr if <1 896 2211 D—08 2SC D ■fi235bOS DQG4ÛS1 b HSIEG SIEMENS AKTIENGESELLSCHAF BU


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PDF 0235bGS Q68000-A4984 fi235bOS transistor 626 BU626A transistor d 2213 Q68000-A4984
Not Available

Abstract: No abstract text available
Text: V V cb = 3 0 V Semiconductor Group 770 fi235bOS 0120b35 *113 a) 1998-11-01 SIEM


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PDF Q62702-C2107 Q62702-C2109 Q62702-C2110 Q62702-C2146 Q62702-C2112 Q62702-C2113 Q62702-C2147 Q62702-C2115 Q62702-C2116 OT-223
aim 65

Abstract: Q68000-A4984
Text: fi235bOS D0D4ÔS1 b H S I E G P~T~-33~/3 BU626A SIEMENS AKT IENG ES ELLS CH AF Total perm, power


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PDF 0235bGS Q68000-A4984 fi235bOS BU626A D--10 aim 65 Q68000-A4984
MAF100

Abstract: diode 682 diode marking code 682 BA 682 BA682 DIODE ba 683 BA diode BA683 682 diode A723
Text: package label. 46 QUO C-09 03E D ■fi235bOS 0015735 HSIEG SIEMENS AKTIENGESELLSCHAF T'ù7-/S* BA682 â


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PDF -BA683 Q62702-A145 Q62702-A723 Q62702-A121 BA683 QQ1S733 BA682 MAF100 diode 682 diode marking code 682 BA 682 BA682 DIODE ba 683 BA diode BA683 682 diode A723
Not Available

Abstract: No abstract text available
Text: fi235bOS 0120471 0^2 ■1998-11-01 BB 804 SIEMENS Diode capacitance Cr = / ( V r) per diode


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PDF Q62702-B372 EHA07004 OT-23 fi235bOS D1S047H
BC 170 transistor

Abstract: No abstract text available
Text: cutoff current /cbo = H^a) V b = 60V C — Semiconductor Group 679 fi235bOS 01205b2 TbQ


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PDF 17-16W BC807W, BC808W OT-323 Q62702-C2321 18-16W Q62702-Ã 18-25W Q62702-C2323 18-40W BC 170 transistor
transistor D 1557

Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Text: 5SC » fi235bOS GG04QÔ1 S H S I E â À F 280 S AKTIENGESELLSCHAF " PNP Germanium UHF Transistor -SIEMENS - fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly intended for use in mixer and oscillator circuits up to 90 0 M H z in diode tuned tuners. T yp


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PDF fi235bOS GG04Q 2701-F88 transistor D 1557 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Not Available

Abstract: No abstract text available
Text: Group I fi235bOS QObflSOl b E l ■159 BH 701 SIEM ENS i


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PDF Q68000-A8760- fi235bOS 0HS00107 6235bQ5
2057

Abstract: siemens im 365
Text: fi235bOS 0GflflM£2 TGR 432 03.96 SIEM EN S Grenzwerte Maximum Ratings Bezeichnung Description


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PDF D066455 2057 siemens im 365
BUZ24

Abstract: C160
Text: \ \ \ s s 20 40 60 80 100 120 140'C160 - T, Semiconductor Group 229 > fi235bOS 00b7fl0b Tbl â


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PDF BUZ24 O-204 C67078-S1003-A2 fi235bOS 00b7fl0b C160
bu 11 af

Abstract: No abstract text available
Text: 914 2230 E- 13 5SC D fi235bOS 00D4flbcl 3 S I E G 25C 0 4 8 6 9 -2?3 IJ SIEMENS


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PDF 023SbG5 BUX84 BUX85 Q68000-A3869 Q68000-A5166 Talxi50 fl235fc bu 11 af
c111m

Abstract: Transistor 2SC 2166 TRANSISTOR C-111 Q62702-S428 1E0C Q62702-S355 Q62702-S407 Q62702-S348 Q62702-S347 TRANSISTOR C-111 M
Text: A-06 851 25C D ■fi235bOS OOOMflOfc» I WSIEG 25^04806 D~T*i35'-/i SIEMENS AKTIENGESELLSCHAF


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PDF Q62702-S fi235bOS BSV65 c111m Transistor 2SC 2166 TRANSISTOR C-111 Q62702-S428 1E0C Q62702-S355 Q62702-S407 Q62702-S348 Q62702-S347 TRANSISTOR C-111 M
Not Available

Abstract: No abstract text available
Text: Group 1747 ■1998-11-01 fi235bOS G 1 2 2 1 ^ 766 m SIEMENS Total power


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PDF 900MHz Q62702-F1494 OT-323 23SbQ5
BUZ24

Abstract: SIEMENS EC 230 98 C160 CID32
Text: V i?QS = 25 Q, L = 322 nH 20 40 60 80 100 120 140'C160 - T, Semiconductor Group I fi235bOS


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PDF O-204 C67078-S1003-A2 535b05 00b7fi0S fi235bOS 00b7fl0b BUZ24 SIEMENS EC 230 98 C160 CID32
BF993

Abstract: KDS 1M marking MTs g1625 I00MH Silicon N Channel MOSFET Tetrode t 993 d
Text: 1 V 2 0 1 2 3 4 5 V -^ Siemens Aktiengesellschaft fi235bOS 00bbfl7S 2bfi 467 BF 993 Drain current Io


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PDF Q62702-F1018 OT-143 3Sb05 00bbfi flZ35b05 EHT07232 EHM07014 6S35b05 BF993 KDS 1M marking MTs g1625 I00MH Silicon N Channel MOSFET Tetrode t 993 d
BS170

Abstract: No abstract text available
Text: fi235bOS Q 05411 1 3ÛT SIEMENS Safe operating area / D = / ( V D S ) parameter: D = 0.01 ,T C =


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PDF Q67000-S076 Q67000-S285 Q67000-S061 GQ54112 E35bOS BS170
Not Available

Abstract: No abstract text available
Text: Group Permissible Pulse Load f ’totmax/p totDC = f (tp) 1466 1998-11-01 ■I fi235bOS


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PDF BFP181R 900MHz Q62702-F1685 OT-143R 235fc
SFH 910

Abstract: k 4111 K SFH 910 SFH 705
Text: SIEMENS AKTIEN6ESELLSCHAF M7E ]> SIEMENS fi235bOS 0027362 2 SIEG FEATURES • Package: Special Case, Grey Tinted Epoxy Resin, Solder Tabs, 2.54 mm (Via") Lead Spacing • Cathode Marking: Short Solder Tab • High Reliability • Long Life • Diametrical Radiation • High Pulse Handling Capability • Good Spectral Matching with Silicon Photodetectors DESCRIPTION The SFH 435 is a two-beam GaAs infrared emitting diode with one chip. The beams emerge diametrically from the diode in a


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PDF fi235bOS 023SbGS GG273flM T-41-11 SFH 910 k 4111 K SFH 910 SFH 705
si1329

Abstract: No abstract text available
Text: ^thJC Z^thJA 1 3 2 ^ K/W K/W D-0 3 ÛÛD D fi235bOS Q01SG33 5 W ËSIZG SIEMENS A K


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PDF fl23Sfc GD1S035 si1329
Not Available

Abstract: No abstract text available
Text: fi235bOS o m o t.13 - 01.96 7T0 SIEM ENS CGY 60 GaAs MMIC Application Circuit for


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PDF 85GHz) Q62702G-39
Not Available

Abstract: No abstract text available
Text: Drain-source breakdown voltage ^(B R )D S S = T, Data Book 573 fi235bOS 01332^5 06.99 334


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PDF O-220 C67078-S1313-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T
Not Available

Abstract: No abstract text available
Text: Siemens Aktiengesellschaft 47E E l SIEG 217 ■i SIEMENS fi235bOS O O aG Tl


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PDF C67076-A1001-A2 C67076-A1016-A2 123SbQS. fi235bOS
Not Available

Abstract: No abstract text available
Text: Halbleiter, Marketing-Kommunikation, Semiconductor Group 1940 fi235bOS D1223CH ^ 3 1998-11-01 â–


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PDF CGY60 85GHz) Q62702G-39 fl235bD5 fi235bOS D1223CH
EM 257

Abstract: BC257 bc257 siemens BC257B BC258 A235L BC258B BC258A TR BC Q62702-C187
Text: 150 Siemens Aktiengesellschaft 271 SIE D ■fi235bOS 0041554 72^ «SIEG SIFP1FNS


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PDF 853SbDS Q62702-C700 Q62702-C184 Q62702-C206 Q62702-C701 Q62702-C187 Q62702-C188 Q62702-C438 Q62702-C702 Q62702-C192 EM 257 BC257 bc257 siemens BC257B BC258 A235L BC258B BC258A TR BC
Not Available

Abstract: No abstract text available
Text: 0 5 10 15 20 25 30 V 40 ► ^S D Semiconductor Group 543 fi235bOS


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PDF O-220 C67078-S1314-A3 0235bOS 235b05
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