The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
SMALL-AMP-DIP-EVM SMALL-AMP-DIP-EVM ECAD Model Texas Instruments SMALL-AMP-DIP-EVM
TPH9R00CQH TPH9R00CQH ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
DF2B6M4ASL DF2B6M4ASL ECAD Model Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2)
TCR2LF18 TCR2LF18 ECAD Model Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
7UL2T125FK 7UL2T125FK ECAD Model Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F TC75S102F ECAD Model Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25

fet small signal Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - MGF0805A

Abstract: MITSUBISHI example s band
Text: < High-power GaAs FET ( small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched , notice. Publication Date : Apr., 2011 1 < High-power GaAs FET ( small signal gain stage , 2 < High-power GaAs FET ( small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - , < High-power GaAs FET ( small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A , < High-power GaAs FET ( small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A


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PDF MGF0805A MGF0805A, 400mA MGF0805A MITSUBISHI example s band
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic , < High-power GaAs FET ( small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF09151P TYPICAL CHARACTERISTICS < High-power GaAs FET ( small signal gain stage , < High-power GaAs FET ( small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - , GaAs FET ( small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched


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PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched , FET ( small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A OUTLINE DRAWING < High-power GaAs FET ( small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - , Schematic and Characteristics : f=2.6GHz < High-power GaAs FET ( small signal gain stage) > MGF0805A L , =2.6GHz < High-power GaAs FET ( small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A


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PDF MGF0805A MGF0805A, 400mA
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic , Unit Max. -5 6.5 V dBm % dB dBc C/W < High-power GaAs FET ( small signal gain stage , < High-power GaAs FET ( small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched MGF09152P TYPICAL CHARACTERISTICS < High-power GaAs FET ( small signal gain stage , =10V,ID=700mA, Reference Plane see Fig.1) < High-power GaAs FET ( small signal gain stage) > MGF0952P


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PDF MGF0952P MGF0952P 15GHz 25dBm 15GHz 700mA
2011 - 12W SMD

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold , , limits are subject to change. Publication Date : Apr., 2011 1 < High-power GaAs FET ( small signal , CHARACTERISTICS Publication Date : Apr., 2011 2 < High-power GaAs FET ( small signal gain stage , Publication Date : Apr., 2011 3 < High-power GaAs FET ( small signal gain stage) > MGF0951P L & S BAND , Plane see Fig.1) Publication Date : Apr., 2011 4 < High-power GaAs FET ( small signal gain stage


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PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA 12W SMD
2011 - s band

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold , . Publication Date : Apr., 2011 1 < High-power GaAs FET ( small signal gain stage) > MGF0952P L & S BAND , ., 2011 2 < High-power GaAs FET ( small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD , < High-power GaAs FET ( small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - , Date : Apr., 2011 4 < High-power GaAs FET ( small signal gain stage) > MGF0952P L & S BAND


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PDF MGF0952P MGF0952P 15GHz 25dBm 15GHz 700mA s band
2011 - MGF1601B

Abstract: MGF1601
Text: < High-power GaAs FET ( small signal gain stage) > MGF1601B S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to , FET ( small signal gain stage) > MGF1601B S to X BAND / 0.15W non - matched MGF1601B TYPICAL CHARACTERISTICS (Ta=25C) Publication Date : Apr., 2011 2 < High-power GaAs FET ( small signal gain stage , =100mA) Publication Date : Apr., 2011 3 < High-power GaAs FET ( small signal gain stage) > MGF1601B S to X BAND


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PDF MGF1601B MGF1601B, 100mA MGF1601B MGF1601
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers , < High-power GaAs FET ( small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched MGF0919A TYPICAL CHARACTERISTICS VDS=6V ID=0.1A f=1.9GHz < High-power GaAs FET ( small signal gain stage , =300mA, Reference Plane see Fig.1) < High-power GaAs FET ( small signal gain stage) > MGF0919A L & S BAND / 1W


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PDF MGF0919A MGF0919A 30dBm 12dBm 300mA 50pcs)
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers , < High-power GaAs FET ( small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched MGF09121A TYPICAL CHARACTERISTICS Publication Date : Apr., 2011 2 < High-power GaAs FET ( small signal gain , =500mA, Reference Plane see Fig.1) Publication Date : Apr., 2011 3 < High-power GaAs FET ( small signal gain


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PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs)
2011 - MGF0904

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , 1.9±0.4 9.0±0.2 2MIN APPLICATION 4.4+0/-0.3 < High-power GaAs FET ( small signal , < High-power GaAs FET ( small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched MGF0904A , 16.5 15.1 14.1 11.9 Publication Date : Apr., 2011 3 < High-power GaAs FET ( small signal gain


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PDF MGF0904A MGF0904A, 65GHz 15dBm 200mA MGF0904
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0910A L & S BAND / 6W non - matched DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , *2 :Channel-case Publication Date : Apr., 2011 1 < High-power GaAs FET ( small signal gain , =2.3GHz) Publication Date : Apr., 2011 2 < High-power GaAs FET ( small signal gain stage) > MGF0910A L & S BAND , S21,S12 vs. f Publication Date : Apr., 2011 3 < High-power GaAs FET ( small signal gain stage


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PDF MGF0910A MGF0910A,
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers , ., 2011 1 < High-power GaAs FET ( small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - , < High-power GaAs FET ( small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched MGF0919A S , < High-power GaAs FET ( small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched Keep safety


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PDF MGF0919A MGF0919A 30dBm 12dBm 300mA 50pcs)
2011 - mitsubishi *4a fet

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0907B L & S BAND / 10W non - matched DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , FET ( small signal gain stage) > MGF0907B L & S BAND / 10W non - matched MGF0907B TYPICAL , (f=2.3GHz) Publication Date : Apr., 2011 2 < High-power GaAs FET ( small signal gain stage , ) ) S11,S22 vs. f S21,S12 vs. f Publication Date : Apr., 2011 3 < High-power GaAs FET ( small


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PDF MGF0907B MGF0907B, mitsubishi *4a fet
2011 - MGF1801

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF1801B S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to , FET ( small signal gain stage) > MGF1801B S to X BAND / 0.2W non - matched MGF1801B TYPICAL CHARACTERISTICS (Ta=25C) Publication Date : Apr., 2011 2 < High-power GaAs FET ( small signal gain stage , =100mA) Publication Date : Apr., 2011 3 < High-power GaAs FET ( small signal gain stage) > MGF1801B S to X BAND


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PDF MGF1801B MGF1801B, 23dBm 100mA MGF1801
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0907B L & S BAND / 10W non - matched DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , :Channel-case 1 < High-power GaAs FET ( small signal gain stage) > MGF0907B L & S BAND / 10W non - , vs. VDS GLP, P1dB, ID, PAE vs. VDS (f=2.3GHz) < High-power GaAs FET ( small signal gain stage , ) ) S11,S22 vs. f S21,S12 vs. f < High-power GaAs FET ( small signal gain stage) > MGF0907B L & S


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PDF MGF0907B MGF0907B,
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed , 18 14 Unit Max. -5 20 V dBm % dB C/W < High-power GaAs FET ( small signal gain , CHARACTERISTICS < High-power GaAs FET ( small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic , .1) < High-power GaAs FET ( small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non -


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PDF MGF0953P MGF0953P 15GHz 10dBm 15GHz
2011 - MGF0905A

Abstract: IDS800
Text: < High-power GaAs FET ( small signal gain stage)> MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , 1.9±0.4 9.0±0.2 2MIN APPLICATION 4.4+0/-0.3 < High-power GaAs FET ( small signal , < High-power GaAs FET ( small signal gain stage) > MGF0905A L & S BAND / 2.5W non - matched MGF0905A , 12.2 10.4 8.1 Publication Date : Apr., 2011 3 < High-power GaAs FET ( small signal gain stage


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PDF MGF0905A MGF0905A, 65GHz 26dBm 800mA MGF0905A IDS800
2011 - RG1000

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for , CHARACTERISTICS Publication Date : Apr., 2011 2 < High-power GaAs FET ( small signal gain stage , =0.15A, Reference Plane see Fig.1) Publication Date : Apr., 2011 3 < High-power GaAs FET ( small signal gain , dBm % dB C/W *3:Channel to case Publication Date : Apr., 2011 1 < High-power GaAs FET ( small


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PDF MGF0953P MGF0953P 15GHz 10dBm 15GHz RG1000
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0910A L & S BAND / 6W non - matched DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , C/W Vf method *2 :Channel-case 1 Typ. A S < High-power GaAs FET ( small signal , =2.3GHz) < High-power GaAs FET ( small signal gain stage) > MGF0910A L & S BAND / 6W non - matched MGF0910A , ( small signal gain stage) > MGF0910A L & S BAND / 6W non - matched Keep safety first in your


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PDF MGF0910A MGF0910A,
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0911A L & S BAND / 12W non - matched DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , C/W Vf method *2 :Channel-case 1 Typ. A S < High-power GaAs FET ( small signal , =2.3GHz) < High-power GaAs FET ( small signal gain stage) > MGF0911A L & S BAND / 12W non - matched MGF0911A , ( small signal gain stage) > MGF0911A L & S BAND / 12W non - matched Keep safety first in your


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PDF MGF0911A MGF0911A,
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers , , ratings, limits are subject to change. 1 < High-power GaAs FET ( small signal gain stage , ( small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched MGF0921A S PARAMETERS (Ta=25C,VD=10V,ID=500mA, Reference Plane see Fig.1) < High-power GaAs FET ( small signal gain


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PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs)
2011 - mgf0911A

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0911A L & S BAND / 12W non - matched DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , *2 :Channel-case Publication Date : Apr., 2011 1 < High-power GaAs FET ( small signal gain , =2.3GHz) Publication Date : Apr., 2011 2 < High-power GaAs FET ( small signal gain stage) > MGF0911A L & S BAND , S21,S12 vs. f Publication Date : Apr., 2011 3 < High-power GaAs FET ( small signal gain stage


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PDF MGF0911A MGF0911A, mgf0911A
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage)> MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , . A S < High-power GaAs FET ( small signal gain stage) > MGF0906B L & S BAND / 5W non - , vs. VDS GLP, P1dB, ID, PAE vs. VDS (f=2.3GHz) < High-power GaAs FET ( small signal gain stage , ) ) S11,S22 vs. f S21,S12 vs. f < High-power GaAs FET ( small signal gain stage) > MGF0906B L & S


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PDF MGF0906B MGF0906B,
2011 - MGF0906B

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage)> MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , < High-power GaAs FET ( small signal gain stage) > MGF0906B L & S BAND / 5W non - matched MGF0906B , , ID, PAE vs. VDS (f=2.3GHz) Publication Date : Apr., 2011 2 < High-power GaAs FET ( small signal , < High-power GaAs FET ( small signal gain stage) > MGF0906B L & S BAND / 5W non - matched Keep safety


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PDF MGF0906B MGF0906B, MGF0906B
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET ( small signal gain stage) > MGF0912A L & S BAND / 14W non - matched DESCRIPTION The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band , 9.0±0.2 2MIN 4.4+0/-0.3 < High-power GaAs FET ( small signal gain stage) > MGF0912A L , S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.6(A) ) Publication Date : Apr., 2011 2 < High-power GaAs FET ( small signal gain stage) > MGF0912A L & S BAND / 14W non - matched Keep safety first in your


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PDF MGF0912A MGF0912A, 33dBm
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