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Part Manufacturer Description Datasheet Download Buy Part
LTC3867EUF#PBF Linear Technology LTC3867 - Synchronous Step-Down DC/DC Controller with Differential Remote Sense and Nonlinear Control; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LTC3867EUF#TRPBF Linear Technology LTC3867 - Synchronous Step-Down DC/DC Controller with Differential Remote Sense and Nonlinear Control; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LTC3867IUF#TRPBF Linear Technology LTC3867 - Synchronous Step-Down DC/DC Controller with Differential Remote Sense and Nonlinear Control; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LTC3867IUF#PBF Linear Technology LTC3867 - Synchronous Step-Down DC/DC Controller with Differential Remote Sense and Nonlinear Control; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
ISL29102IROZ-T7 Intersil Corporation Low Power Ambient Light-to-Voltage Nonlinear Converter; ODFN6; Temp Range: -40° to 85°C
ISL29102IROZ-T7A Intersil Corporation Low Power Ambient Light-to-Voltage Nonlinear Converter; ODFN6; Temp Range: -40° to 85°C

fet curtice nonlinear model Datasheets Context Search

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2003 - Curtice

Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Text: Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice [2], the Statz-Pucel [3], and the TOM (Triquint's Own Model ) [4]. The Curtice model was one of the first high frequency nonlinear GaAs FET models to be implemented in commercial simulators , range of biases however, CEL has found that the Curtice model doesn't fit the measured AC and DC


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PDF AN1023 sam13-106. Curtice fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
2006 - C882 TRANSISTOR

Abstract: ATF-531P8 ATF531P8 ATF531P83 Avago Mounted Amplifiers BCV62B BCV62C Curtice RG200D
Text: third order intercept point (OPI3). The non-linear transistor model for the ATF-531P8 is based on the work of Curtice [1]. The model can be downloaded from Avago's website. An important feature of the non-linear model is the use of a quadratic expression for the drain current versus gate voltage , Microwave circuits, IEEE Press, New York 1997 [3] W. R. Curtice , "A MESFET model for use in the design of , in Figure 1. ATF-531P8 The ATF-531P8 E-pHEMT FET features a combination of industry-leading


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PDF ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN C882 TRANSISTOR ATF531P8 ATF531P83 Avago Mounted Amplifiers BCV62B BCV62C Curtice RG200D
2003 - ATF-531P8

Abstract: AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89
Text: -1dB) and output third order intercept point (OPI3). The non-linear transistor model for the ATF-531P8 is based on the work of Curtice [1]. The model can be downloaded from Agilent's website. An important feature of the non-linear model is the use of a quadratic expression for the drain current versus , , New York 1997 [3] W. R. Curtice , "A MESFET model for use in the design of GaAs integrated circuits , in Figure 1. ATF-531P8 The ATF-531P8 E-pHEMT FET features a combination of industry-leading


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PDF ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89
2003 - agilent pHEMT transistor

Abstract: Curtice agilent pHEMT transistor LNA LOW NOISE AMPLIFIER transistor ajw ATF-54143 ATF-55143 advanced design system ATF55143 ATF-5X143 bjt differential amplifier application circuits
Text: third order intercept point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely predicts the DC and small signal behavior , needed. The model can be downloaded from Agilent's web-site. The results of the non-linear analysis , . Curtice , "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave , Agilent ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications


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PDF ATF-55143 ATF-55143 5988-9555EN agilent pHEMT transistor Curtice agilent pHEMT transistor LNA LOW NOISE AMPLIFIER transistor ajw ATF-54143 advanced design system ATF55143 ATF-5X143 bjt differential amplifier application circuits
2006 - L-07C1N8ST

Abstract: atf55143 fet curtice nonlinear model ATF-55143 sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T
Text: compression point (P1dB) and output third order intercept point (OIP3). The non-linear transistor model used in the simulation is based on the work of Curtice [2]. Although this model closely predicts the DC , -54143 PHEMT - A.J. Ward 2. W. R. Curtice , "A MESFET model for use in the design of GaAs integrated circuits , -55143 device operates as a normal FET requiring input and output matching as well as DC biasing. Using , both linear and non-linear modes of operation. Linear Analysis For the linear analysis the


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PDF ATF-55143 ATF-55143 AV01-0376EN L-07C1N8ST atf55143 fet curtice nonlinear model sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T
2006 - transistor C715

Abstract: ATF-531P8 ATF531 AN-1222 ATF531P83 ATF-54143 BCV62C fet curtice mesfet fet
Text: (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice [3]. , . Curtice , "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave , ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications , . The Avago ATF-531P8 E-pHEMT FET offers performance optimized for the first and second stages of , years at a mounting temperature of +85° C. The ATF-531P8 E-pHEMT FET is housed in the compact 2.0 mm x


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PDF ATF-531P8 AN-1281: ATF-54143 5988-9545EN transistor C715 ATF531 AN-1222 ATF531P83 BCV62C fet curtice mesfet fet
2006 - transistor ajw

Abstract: ATF55143 Curtice AN-1222 ATF-54143 ATF-55143 ATF-551M4 ATF-5X143 55143
Text: compression point ( P-1dB) and output third order intercept point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely predicts the , circuits, IEEE Press, New York 1997 [3] W. R. Curtice , "A MESFET model for use in the design of GaAs , ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications , nonlinear modes of operation. Linear Analysis For the linear analysis the transistors can be modeled with


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PDF ATF-55143 ATF-55143 AN-1281: ATF-54143 5988-9555EN transistor ajw ATF55143 Curtice AN-1222 ATF-551M4 ATF-5X143 55143
2003 - equivalent transistor C5001

Abstract: C5001 transistor c815 transistor transistor c815 ATF581433 transistor C633 ATF-58143 ATF58143 TRANSISTORS BJT list ATF-54143 sot-343
Text: transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely , may be found on: http://www.agilent.com/eesof-eda 4 15 [3] W. R. Curtice , "A MESFET model , Agilent ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications , component heat generation. The Agilent ATF-58143 E-pHEMT FET offers performance optimized for the first , ATF-58143 E-pHEMT FET features 0.5 dB noise figure with +16.5 dB associated gain, combined with


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PDF ATF-58143 ATF-58143 MTT-28, AN-1281: ATF-54143 AN-1222: equivalent transistor C5001 C5001 transistor c815 transistor transistor c815 ATF581433 transistor C633 ATF58143 TRANSISTORS BJT list ATF-54143 sot-343
2003 - agilent pHEMT transistor

Abstract: transistor C715 ATF-531P8 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER GaAs pHEMT Low Noise 2x2 vhf fet lna AN-1222 BCV62C ATF-54143 ATF531P83
Text: point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice , . Curtice , "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave , Agilent ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications , component heat generation. The Agilent ATF-531P8 E-pHEMT FET offers performance optimized for the first , FET is housed in the compact 2.0 mm x 2.0 mm x 0.75 mm 8-pad industry-standard leadless plastic


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PDF ATF-531P8 ATF-531P8 5988-9545EN agilent pHEMT transistor transistor C715 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER GaAs pHEMT Low Noise 2x2 vhf fet lna AN-1222 BCV62C ATF-54143 ATF531P83
2007 - TRANSISTOR C815

Abstract: equivalent transistor C5001 AV02-0913EN ATF-58143 ATF581433 surface mount transistor c633 C5001 transistor LL1005-FH2N2S fet curtice nonlinear model SOT-343 AMA A
Text: -1dB) and output third order intercept point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely predicts the DC and small signal , [2] Stephan Maas, Nonlinear icrowave circuits, IEEE M Press , New York 1997 [3] W. R. Curtice , "A , ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900MHz Applications Application Note , generation. The Avago ATF-58143 EpHEMT FET offers performance o ptimized for the first and econd stages


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PDF ATF-58143 900MHz ATF-58143 AN-1281: ATF54143 5989-9554EN AV02-0913EN TRANSISTOR C815 equivalent transistor C5001 ATF581433 surface mount transistor c633 C5001 transistor LL1005-FH2N2S fet curtice nonlinear model SOT-343 AMA A
2006 - circuit diagram of hearing aid using transistors

Abstract: ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter circuit diagram of digital hearing aid ATF54143 LL1608-FS4N7S JP503 atf54143 pHEMT
Text: performance. 6221-06 AN 1281 5 0 -5 -10 Non-linear Analysis The non-linear transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Avago Technologies' web-site. An important feature of the non-linear model is the use of a quadratic expression for , 3.0 Table 3. Simulated non-linear performance Bias Conditions per FET P-1dB Third Order , Press, New York 1997. [3] W. R. Curtice , "A MESFET Model for Use in the Design of GaAs Integrated


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PDF ATF-54143 MTT-28, ATF54143 5988-5688EN circuit diagram of hearing aid using transistors ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter circuit diagram of digital hearing aid LL1608-FS4N7S JP503 atf54143 pHEMT
2002 - ATF-54143 application notes

Abstract: ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications lna 2.5 GHZ s parameter ads design PIN attenuator ADS model circuit diagram of low cost hearing aid agilent ads combiner Tower Mounted Amplifier agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
Text: , Nonlinear Microwave circuits, IEEE Press, New York 1997. [3] W. R. Curtice , "A MESFET Model for Use in , intercept point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Agilent's web-site. An important feature of the non-linear model is the use of 7 20 15 GAIN (dB) 10 5 0 -5 -10 -15 0.5 1.0 1.5 2.0 , PIN or FET devices. The LNA described in this paper is for use in applications covering 1.7 GHz


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PDF ATF-54143 5988-5688EN ATF-54143 application notes ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications lna 2.5 GHZ s parameter ads design PIN attenuator ADS model circuit diagram of low cost hearing aid agilent ads combiner Tower Mounted Amplifier agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
2004 - Anaren Microwave

Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter
Text: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood , be applied. This paper describes the use of a new large signal LDMOS FET model in the design of a high power, UMTS band 60W Doherty amplifier. This new model will be shown to be capable of providing , test of prototypes The new CMC die model was developed by making extractions on a 1W test FET . This , large signal transistor model allows the achievement of first time design success. Preliminary work


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2006 - TDMA simulation ADS

Abstract: ATF-50189 BTS 3900 a 267M2002105K msu 305 GSM900 ATF-54143 ATF-501P8 ATF050189 ATF0189
Text: non-linear modes of operation. was used for simulation of 1 dB compression point (P1dB) and output third order intercept point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Avago Technologies web site. Linear Analysis , -50189 device operates as a normal FET requiring input and output matching as well as DC biasing. Unlike a , , shown in figure 12, show the stability factor, K>1. Non-linear Analysis For the non-linear analysis


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PDF ATF-50189 800MHz 900MHz 2400MHz 900MHz AV01-0365EN TDMA simulation ADS BTS 3900 a 267M2002105K msu 305 GSM900 ATF-54143 ATF-501P8 ATF050189 ATF0189
JD 1803

Abstract: philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC jd 1803 data sheet shockley diode application quartz kds 9j Yokogawa yf 104
Text: device modeling are described in detail. Nonlinear , linear, and noise models for MESFETs and Schottky , 54 3.2 Principle of Operation 55 3.3 Ion-Implanted MESFET Model 56 3.4 Intrinsic I-V Model 58 3.5 , 4.2.2 Diode Model 99 4.2.3 Diode Characterization and Modeling 102 4.2.3.1 DC I-V Measurement 102 , Blocks 127 Donald Estreich 5.1 Introduction 127 5.2 Biasing Circuits 128 5.2.1 Biasing a Single FET 131 5.2.2 Biasing Multiple FET Configurations 132 5.2.3 Temperature and Backgating Effects in


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2010 - Modeling of SOI FET for RF Switch Applications

Abstract: No abstract text available
Text: switch linearity will also be discussed. Finally a hybrid model that combines PSP as the FET core and a layout-dependent non-linear SOI substrate model is presented, and excellent non-linearity predictability was , become higher if the effective substrate resistivity is lower. Assuming a simple non-linear model as , a simplified diagram of the final hybrid model used for SOI switch application. The FET portion of , here. III. MODEL IMPLEMENTATION The PSP model was selected for the SOI FET in the switch


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PDF 12-stacked 12stacked Modeling of SOI FET for RF Switch Applications
HP RF TRANSISTOR GUIDE

Abstract: MRF286 MHL9838 MRF210305 High frequency MRF transistor motorola MRF Base Station Drivers mrf284 Curtice linear amplifier 470-860
Text: , Daren Bridges, Tao Liang, Eric Shumate and W. R. Curtice , "A New Dynamic Electro­Thermal Nonlinear Model , : http://www.motorola.com/semiconductors/rf/models/ The Motorola Electro Thermal (MET) model for RF LDMOS transistors is a nonlinear model that for the first time examines both electrical and thermal , tailored to model high power RF LDMOS transistors used in base station, HDTV digital broadcast, and land , .3) harmonic balance simulator, the MET LDMOS model is capable of performing small­signal, large­signal


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PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MHL9838 MRF210305 High frequency MRF transistor motorola MRF Base Station Drivers mrf284 Curtice linear amplifier 470-860
2003 - gunn diode ghz s-parameter

Abstract: impatt diode impatt fet dro 10 ghz x-band dro C band FET transistor s-parameters 25 MHz $ pin Crystal Oscillators THrough hole type california bearing ratio test DRO lnb Dielectric Resonator Oscillator DRO
Text: devices. This parameter will directly impact the DRO's phase noise performance. DEVICE NONLINEAR MODEL DEVELOPMENT The choice of a nonlinear model for a FET is determined by evaluating the DC characteristics of , in the nonlinear model . Upon reviewing basic DRO topologies and focusing on a reflection type , 0.15pF CDX 0.02pF LS_PKG 0.05nH SOURCE Figure 1. NEC NE72218 Nonlinear Model Schematic , exponent Table 2. Triquint's own model (TOM) parameters for the NE72218 nonlinear model AN1035 -100


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PDF AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt fet dro 10 ghz x-band dro C band FET transistor s-parameters 25 MHz $ pin Crystal Oscillators THrough hole type california bearing ratio test DRO lnb Dielectric Resonator Oscillator DRO
C-Band Power GaAs FET HEMT Chips

Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier Three MMIC Solution for an X-band RF Front End HEMT MMIC POWER AMPLIFIER multilayer lithography ic fabrication GaAs FET HEMT Chips
Text: current and high current, were used in the amplifier designs. The nonlinear FET model used to simulate , carried out at M/A-COM, it is believed that the Cooke model predicts FET channel temperature accurately , nonlinear MSAG FET models. For linear simulations, equivalent circuit (EC) models and small-signal , output power and PAE. The nonlinear model has I-V equations along T ECHNICAL F EATURE Microstrip , S-parameter data, load pull data and pulsed I-V data. The nonlinear model was verified for the standard


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biasing a D-mode PHEMT

Abstract: micro-rel M/A-COM H9 948 LG DIODE
Text: non-linear circuit model for unstressed, diodel stressed and diode2 stressed devices. The model that was chosen is a customized version of the TOM3 non-linear FET model . The customization of the TOM3 model , extraction routines for many non-linear modeling systems since the model parameters often lose their physical , existing D-mode pHEMT process, with the addition of an E-mode FET for use primarily in logic circuits. This , are used to configure the FET structure as a diode. Some of these configurations are shown in Fig. 1


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DAC12QZ

Abstract: 171J Nonlinear circuits handbook Nonlinear Circuits Handbook Analog Devices SINGLE OP AMP LOW OFFSET DAC-12QZ AC1037 electrometer nonlinear circuits
Text: available from Analog Devices OTHER AMPLIFIERS • High Performance FET — model 52: low noise (1.5jliV , ANALOG DEVICES High Voltage Differential FET Amplifier FEATURES High Output Voltage:  , Diff. Amp for High CMV Biridge Applications Reference Power Supply GENERAL DESCRIPTION Model 171 is a high performance FET input op amp designed for operation over a wide range of supply voltages , 20pA (171K), doubling per +10 C increase of temperature. The model 171 also features small signal


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PDF 15MHz 300ns 15AiV/Â 70MHz 100mA 15/iV/Â 10MHz, 80ris DAC12QZ 171J Nonlinear circuits handbook Nonlinear Circuits Handbook Analog Devices SINGLE OP AMP LOW OFFSET DAC-12QZ AC1037 electrometer nonlinear circuits
2003 - NEc hemt

Abstract: nec hemt nonlinear models NE38018 AN1022 AN1033 AN1039 "Small Signal Amplifiers" 1e36 0.15 um pHEMT transistor
Text: developed. The choice of a nonlinear model for a FET is determined by evaluating the DC characteristics of , DEVICE NONLINEAR MODEL COMPARISON The output of a nonlinear simulation is only as good as the nonlinear , RESULTS The nonlinear device model for the NE38018 was extracted by CEL and optimized using Xpedion , on these parameters verifies the accuracy of the nonlinear model and the appropriate , , "Converting GaAs FET Models for Different Nonlinear Simulators." [3] California Eastern Laboratories, AN1033


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PDF AN1039 NEc hemt nec hemt nonlinear models NE38018 AN1022 AN1033 AN1039 "Small Signal Amplifiers" 1e36 0.15 um pHEMT transistor
2010 - GaN ADS

Abstract: Triangle Microwave cree GaN PA nichrome jammer PAE1 GaN amplifier Cree Microwave cree gate resistor
Text: ) 30 · CREE's scalable non-linear model · All passives created with Cree design rules 20 10 , 16 14 dB(amp(2,1) · CREE's scalable non-linear model · All passives created 12 10 8 , parameters · SMS Pizza Mask Service Ma y2 01 0R ev 5.0 Circuit Types · FET Limiters · High power FET Switches · High Power FET Amplifiers · High IP3 FET Mixers 1 · Broadband Amplifiers · , Service (FWS) for GaN MMICs Cree offers non-linear , scalable GaN HEMT models for MMICs, as well as full


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jfet matching fixture

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT NMOS MODEL PARAMETERS SPICE RF Power Transistor spice AN002 ZERO Bias diode NMOS depletion pspice model depletion MOSFET SPICE AN001 "RF MOSFETs"
Text: FET switching characteristics and Finman has reported successful use of the model with RF MOSFETs. The , modei. L D RD ftCLAMP Figure 1. SPICE model of RF power DMOS FET . Components inside the dashed , contact. The level i model generally is not sufficiently accurate for DMOS devices while the more complex , to drain voltage. Finman1 has described a model for RF MOSFETs thai uses, in addition to a levei 1 NMOS model , a JFET and a network of controlled sources to model the effect of a Afifa-COM m m/a-com


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PDF AN001 jfet matching fixture MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT NMOS MODEL PARAMETERS SPICE RF Power Transistor spice AN002 ZERO Bias diode NMOS depletion pspice model depletion MOSFET SPICE "RF MOSFETs"
NE27200

Abstract: NEC Microwave Semiconductors
Text: NONLINEAR MODEL SCHEMATIC Q1 LG GATE 0.25 nH NE27200 LD 0.14 nH DRAIN LS 0.01 nH SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA TQGAMMA TQGAMMAAC Q TQDELTA VBI IS N RIS RID TAU CDS RDB CBS CGS CGD DELTA1 DELTA2 FC VBR (1) ADS TOM Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the , Parameters RG RD RS RGMET TNOM XTI EG VTOTC BETATCE FFE Q1 1 4 3 0 27 3 1.43 0 0 1 MODEL RANGE


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PDF NE27200 3e-13 3e-12 1e-12 033e-12 NE27200 NEC Microwave Semiconductors
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