2003  Curtice
Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Text: Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice [2], the StatzPucel [3], and the TOM (Triquint's Own Model ) [4]. The Curtice model was one of the first high frequency nonlinear GaAs FET models to be implemented in commercial simulators , range of biases however, CEL has found that the Curtice model doesn't fit the measured AC and DC

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AN1023
sam13106.
Curtice
fet curtice nonlinear model
fet curtice
LAMBDA alpha 400
NE33200
FET model
NE71300
Alpha 1000 GaAsFET
pspice

2006  C882 TRANSISTOR
Abstract: ATF531P8 ATF531P8 ATF531P83 Avago Mounted Amplifiers BCV62B BCV62C Curtice RG200D
Text: third order intercept point (OPI3). The nonlinear transistor model for the ATF531P8 is based on the work of Curtice [1]. The model can be downloaded from Avago's website. An important feature of the nonlinear model is the use of a quadratic expression for the drain current versus gate voltage , Microwave circuits, IEEE Press, New York 1997 [3] W. R. Curtice , "A MESFET model for use in the design of , in Figure 1. ATF531P8 The ATF531P8 EpHEMT FET features a combination of industryleading

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ATF531P8
ATF531P8.
ATF531P8
59889546EN
C882 TRANSISTOR
ATF531P8
ATF531P83
Avago Mounted Amplifiers
BCV62B
BCV62C
Curtice
RG200D

2003  ATF531P8
Abstract: AN1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMOATF5X1P8 High Dynamic Range FET sot89
Text: 1dB) and output third order intercept point (OPI3). The nonlinear transistor model for the ATF531P8 is based on the work of Curtice [1]. The model can be downloaded from Agilent's website. An important feature of the nonlinear model is the use of a quadratic expression for the drain current versus , , New York 1997 [3] W. R. Curtice , "A MESFET model for use in the design of GaAs integrated circuits , in Figure 1. ATF531P8 The ATF531P8 EpHEMT FET features a combination of industryleading

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ATF531P8
ATF531P8.
ATF531P8
59889546EN
AN1222
ATF531P83
BCV62B
BCV62C
RG200D
fet curtice nonlinear model
DEMOATF5X1P8
High Dynamic Range FET sot89

2003  agilent pHEMT transistor
Abstract: Curtice agilent pHEMT transistor LNA LOW NOISE AMPLIFIER transistor ajw ATF54143 ATF55143 advanced design system ATF55143 ATF5X143 bjt differential amplifier application circuits
Text: third order intercept point (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely predicts the DC and small signal behavior , needed. The model can be downloaded from Agilent's website. The results of the nonlinear analysis , . Curtice , "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave , Agilent ATF55143 EpHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications

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ATF55143
ATF55143
59889555EN
agilent pHEMT transistor
Curtice
agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
transistor ajw
ATF54143
advanced design system
ATF55143
ATF5X143
bjt differential amplifier application circuits

2006  L07C1N8ST
Abstract: atf55143 fet curtice nonlinear model ATF55143 sdars AN1222 ATF551M4 ATF pHEMT 250R07C8R2FV4T
Text: compression point (P1dB) and output third order intercept point (OIP3). The nonlinear transistor model used in the simulation is based on the work of Curtice [2]. Although this model closely predicts the DC , 54143 PHEMT  A.J. Ward 2. W. R. Curtice , "A MESFET model for use in the design of GaAs integrated circuits , 55143 device operates as a normal FET requiring input and output matching as well as DC biasing. Using , both linear and nonlinear modes of operation. Linear Analysis For the linear analysis the

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ATF55143
ATF55143
AV010376EN
L07C1N8ST
atf55143
fet curtice nonlinear model
sdars
AN1222
ATF551M4
ATF pHEMT
250R07C8R2FV4T

2006  transistor C715
Abstract: ATF531P8 ATF531 AN1222 ATF531P83 ATF54143 BCV62C fet curtice mesfet fet
Text: (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice [3]. , . Curtice , "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave , ATF531P8 EpHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications , . The Avago ATF531P8 EpHEMT FET offers performance optimized for the first and second stages of , years at a mounting temperature of +85° C. The ATF531P8 EpHEMT FET is housed in the compact 2.0 mm x

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ATF531P8
AN1281:
ATF54143
59889545EN
transistor C715
ATF531
AN1222
ATF531P83
BCV62C
fet curtice
mesfet fet

2006  transistor ajw
Abstract: ATF55143 Curtice AN1222 ATF54143 ATF55143 ATF551M4 ATF5X143 55143
Text: compression point ( P1dB) and output third order intercept point (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely predicts the , circuits, IEEE Press, New York 1997 [3] W. R. Curtice , "A MESFET model for use in the design of GaAs , ATF55143 EpHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications , nonlinear modes of operation. Linear Analysis For the linear analysis the transistors can be modeled with

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ATF55143
ATF55143
AN1281:
ATF54143
59889555EN
transistor ajw
ATF55143
Curtice
AN1222
ATF551M4
ATF5X143
55143

2003  equivalent transistor C5001
Abstract: C5001 transistor c815 transistor transistor c815 ATF581433 transistor C633 ATF58143 ATF58143 TRANSISTORS BJT list ATF54143 sot343
Text: transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely , may be found on: http://www.agilent.com/eesofeda 4 15 [3] W. R. Curtice , "A MESFET model , Agilent ATF58143 EpHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications , component heat generation. The Agilent ATF58143 EpHEMT FET offers performance optimized for the first , ATF58143 EpHEMT FET features 0.5 dB noise figure with +16.5 dB associated gain, combined with

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ATF58143
ATF58143
MTT28,
AN1281:
ATF54143
AN1222:
equivalent transistor C5001
C5001 transistor
c815 transistor
transistor c815
ATF581433
transistor C633
ATF58143
TRANSISTORS BJT list
ATF54143 sot343

2003  agilent pHEMT transistor
Abstract: transistor C715 ATF531P8 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER GaAs pHEMT Low Noise 2x2 vhf fet lna AN1222 BCV62C ATF54143 ATF531P83
Text: point (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice , . Curtice , "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave , Agilent ATF531P8 EpHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications , component heat generation. The Agilent ATF531P8 EpHEMT FET offers performance optimized for the first , FET is housed in the compact 2.0 mm x 2.0 mm x 0.75 mm 8pad industrystandard leadless plastic

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ATF531P8
ATF531P8
59889545EN
agilent pHEMT transistor
transistor C715
agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
GaAs pHEMT Low Noise 2x2
vhf fet lna
AN1222
BCV62C
ATF54143
ATF531P83

2007  TRANSISTOR C815
Abstract: equivalent transistor C5001 AV020913EN ATF58143 ATF581433 surface mount transistor c633 C5001 transistor LL1005FH2N2S fet curtice nonlinear model SOT343 AMA A
Text: 1dB) and output third order intercept point (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely predicts the DC and small signal , [2] Stephan Maas, Nonlinear icrowave circuits, IEEE M Press , New York 1997 [3] W. R. Curtice , "A , ATF58143 EpHEMT GaAs FET Low Noise Amplifier Design for 900MHz Applications Application Note , generation. The Avago ATF58143 EpHEMT FET offers performance o ptimized for the first and econd stages

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ATF58143
900MHz
ATF58143
AN1281:
ATF54143
59899554EN
AV020913EN
TRANSISTOR C815
equivalent transistor C5001
ATF581433
surface mount transistor c633
C5001 transistor
LL1005FH2N2S
fet curtice nonlinear model
SOT343 AMA A

2006  circuit diagram of hearing aid using transistors
Abstract: ATF54143.s2p low cost hearing aid circuit diagram ATF54143 application notes stripline power combiner splitter circuit diagram of digital hearing aid ATF54143 LL1608FS4N7S JP503 atf54143 pHEMT
Text: performance. 622106 AN 1281 5 0 5 10 Nonlinear Analysis The nonlinear transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Avago Technologies' website. An important feature of the nonlinear model is the use of a quadratic expression for , 3.0 Table 3. Simulated nonlinear performance Bias Conditions per FET P1dB Third Order , Press, New York 1997. [3] W. R. Curtice , "A MESFET Model for Use in the Design of GaAs Integrated

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ATF54143
MTT28,
ATF54143
59885688EN
circuit diagram of hearing aid using transistors
ATF54143.s2p
low cost hearing aid circuit diagram
ATF54143 application notes
stripline power combiner splitter
circuit diagram of digital hearing aid
LL1608FS4N7S
JP503
atf54143 pHEMT

2002  ATF54143 application notes
Abstract: ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications lna 2.5 GHZ s parameter ads design PIN attenuator ADS model circuit diagram of low cost hearing aid agilent ads combiner Tower Mounted Amplifier agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
Text: , Nonlinear Microwave circuits, IEEE Press, New York 1997. [3] W. R. Curtice , "A MESFET Model for Use in , intercept point (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Agilent's website. An important feature of the nonlinear model is the use of 7 20 15 GAIN (dB) 10 5 0 5 10 15 0.5 1.0 1.5 2.0 , PIN or FET devices. The LNA described in this paper is for use in applications covering 1.7 GHz

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ATF54143
59885688EN
ATF54143 application notes
ATF54143.s2p
low cost hearing aid circuit diagram
circuit diagram of low cost hearing aid with applications
lna 2.5 GHZ s parameter ads design
PIN attenuator ADS model
circuit diagram of low cost hearing aid
agilent ads combiner
Tower Mounted Amplifier
agilent pHEMT transistor LNA LOW NOISE AMPLIFIER

2004  Anaren Microwave
Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon sparameter
Text: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood , be applied. This paper describes the use of a new large signal LDMOS FET model in the design of a high power, UMTS band 60W Doherty amplifier. This new model will be shown to be capable of providing , test of prototypes The new CMC die model was developed by making extractions on a 1W test FET . This , large signal transistor model allows the achievement of first time design success. Preliminary work

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2006  TDMA simulation ADS
Abstract: ATF50189 BTS 3900 a 267M2002105K msu 305 GSM900 ATF54143 ATF501P8 ATF050189 ATF0189
Text: nonlinear modes of operation. was used for simulation of 1 dB compression point (P1dB) and output third order intercept point (OPI3). The nonlinear transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Avago Technologies web site. Linear Analysis , 50189 device operates as a normal FET requiring input and output matching as well as DC biasing. Unlike a , , shown in figure 12, show the stability factor, K>1. Nonlinear Analysis For the nonlinear analysis

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ATF50189
800MHz
900MHz
2400MHz
900MHz
AV010365EN
TDMA simulation ADS
BTS 3900 a
267M2002105K
msu 305
GSM900
ATF54143
ATF501P8
ATF050189
ATF0189


JD 1803
Abstract: philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC jd 1803 data sheet shockley diode application quartz kds 9j Yokogawa yf 104
Text: device modeling are described in detail. Nonlinear , linear, and noise models for MESFETs and Schottky , 54 3.2 Principle of Operation 55 3.3 IonImplanted MESFET Model 56 3.4 Intrinsic IV Model 58 3.5 , 4.2.2 Diode Model 99 4.2.3 Diode Characterization and Modeling 102 4.2.3.1 DC IV Measurement 102 , Blocks 127 Donald Estreich 5.1 Introduction 127 5.2 Biasing Circuits 128 5.2.1 Biasing a Single FET 131 5.2.2 Biasing Multiple FET Configurations 132 5.2.3 Temperature and Backgating Effects in

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2010  Modeling of SOI FET for RF Switch Applications
Abstract: No abstract text available
Text: switch linearity will also be discussed. Finally a hybrid model that combines PSP as the FET core and a layoutdependent nonlinear SOI substrate model is presented, and excellent nonlinearity predictability was , become higher if the effective substrate resistivity is lower. Assuming a simple nonlinear model as , a simplified diagram of the final hybrid model used for SOI switch application. The FET portion of , here. III. MODEL IMPLEMENTATION The PSP model was selected for the SOI FET in the switch

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12stacked
12stacked
Modeling of SOI FET for RF Switch Applications

HP RF TRANSISTOR GUIDE
Abstract: MRF286 MHL9838 MRF210305 High frequency MRF transistor motorola MRF Base Station Drivers mrf284 Curtice linear amplifier 470860
Text: , Daren Bridges, Tao Liang, Eric Shumate and W. R. Curtice , "A New Dynamic ElectroThermal Nonlinear Model , : http://www.motorola.com/semiconductors/rf/models/ The Motorola Electro Thermal (MET) model for RF LDMOS transistors is a nonlinear model that for the first time examines both electrical and thermal , tailored to model high power RF LDMOS transistors used in base station, HDTV digital broadcast, and land , .3) harmonic balance simulator, the MET LDMOS model is capable of performing smallsignal, largesignal

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SG384/D
HP RF TRANSISTOR GUIDE
MRF286
MHL9838
MRF210305
High frequency MRF transistor
motorola MRF
Base Station Drivers
mrf284
Curtice
linear amplifier 470860

2003  gunn diode ghz sparameter
Abstract: impatt diode impatt fet dro 10 ghz xband dro C band FET transistor sparameters 25 MHz $ pin Crystal Oscillators THrough hole type california bearing ratio test DRO lnb Dielectric Resonator Oscillator DRO
Text: devices. This parameter will directly impact the DRO's phase noise performance. DEVICE NONLINEAR MODEL DEVELOPMENT The choice of a nonlinear model for a FET is determined by evaluating the DC characteristics of , in the nonlinear model . Upon reviewing basic DRO topologies and focusing on a reflection type , 0.15pF CDX 0.02pF LS_PKG 0.05nH SOURCE Figure 1. NEC NE72218 Nonlinear Model Schematic , exponent Table 2. Triquint's own model (TOM) parameters for the NE72218 nonlinear model AN1035 100

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AN1035
p7065.
AN1023,
gunn diode ghz sparameter
impatt diode
impatt
fet dro 10 ghz
xband dro
C band FET transistor sparameters
25 MHz $ pin Crystal Oscillators THrough hole type
california bearing ratio test
DRO lnb
Dielectric Resonator Oscillator DRO

CBand Power GaAs FET HEMT Chips
Abstract: CMC 707 7 transistor solid state xband sparameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC Xband amplifier Three MMIC Solution for an Xband RF Front End HEMT MMIC POWER AMPLIFIER multilayer lithography ic fabrication GaAs FET HEMT Chips
Text: current and high current, were used in the amplifier designs. The nonlinear FET model used to simulate , carried out at M/ACOM, it is believed that the Cooke model predicts FET channel temperature accurately , nonlinear MSAG FET models. For linear simulations, equivalent circuit (EC) models and smallsignal , output power and PAE. The nonlinear model has IV equations along T ECHNICAL F EATURE Microstrip , Sparameter data, load pull data and pulsed IV data. The nonlinear model was verified for the standard

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biasing a Dmode PHEMT
Abstract: microrel M/ACOM H9 948 LG DIODE
Text: nonlinear circuit model for unstressed, diodel stressed and diode2 stressed devices. The model that was chosen is a customized version of the TOM3 nonlinear FET model . The customization of the TOM3 model , extraction routines for many nonlinear modeling systems since the model parameters often lose their physical , existing Dmode pHEMT process, with the addition of an Emode FET for use primarily in logic circuits. This , are used to configure the FET structure as a diode. Some of these configurations are shown in Fig. 1

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DAC12QZ
Abstract: 171J Nonlinear circuits handbook Nonlinear Circuits Handbook Analog Devices SINGLE OP AMP LOW OFFSET DAC12QZ AC1037 electrometer nonlinear circuits
Text: available from Analog Devices OTHER AMPLIFIERS â¢ High Performance FET â model 52: low noise (1.5jliV , ï»¿ANALOG DEVICES High Voltage Differential FET Amplifier FEATURES High Output Voltage: Â , Diff. Amp for High CMV Biridge Applications Reference Power Supply GENERAL DESCRIPTION Model 171 is a high performance FET input op amp designed for operation over a wide range of supply voltages , 20pA (171K), doubling per +10 C increase of temperature. The model 171 also features small signal

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15MHz
300ns
15AiV/Â
70MHz
100mA
15/iV/Â
10MHz,
80ris
DAC12QZ
171J
Nonlinear circuits handbook
Nonlinear Circuits Handbook Analog Devices
SINGLE OP AMP LOW OFFSET
DAC12QZ
AC1037
electrometer
nonlinear circuits

2003  NEc hemt
Abstract: nec hemt nonlinear models NE38018 AN1022 AN1033 AN1039 "Small Signal Amplifiers" 1e36 0.15 um pHEMT transistor
Text: developed. The choice of a nonlinear model for a FET is determined by evaluating the DC characteristics of , DEVICE NONLINEAR MODEL COMPARISON The output of a nonlinear simulation is only as good as the nonlinear , RESULTS The nonlinear device model for the NE38018 was extracted by CEL and optimized using Xpedion , on these parameters verifies the accuracy of the nonlinear model and the appropriate , , "Converting GaAs FET Models for Different Nonlinear Simulators." [3] California Eastern Laboratories, AN1033

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AN1039
NEc hemt
nec hemt nonlinear models
NE38018
AN1022
AN1033
AN1039
"Small Signal Amplifiers"
1e36
0.15 um pHEMT transistor

2010  GaN ADS
Abstract: Triangle Microwave cree GaN PA nichrome jammer PAE1 GaN amplifier Cree Microwave cree gate resistor
Text: ) 30 · CREE's scalable nonlinear model · All passives created with Cree design rules 20 10 , 16 14 dB(amp(2,1) · CREE's scalable nonlinear model · All passives created 12 10 8 , parameters · SMS Pizza Mask Service Ma y2 01 0R ev 5.0 Circuit Types · FET Limiters · High power FET Switches · High Power FET Amplifiers · High IP3 FET Mixers 1 · Broadband Amplifiers · , Service (FWS) for GaN MMICs Cree offers nonlinear , scalable GaN HEMT models for MMICs, as well as full

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jfet matching fixture
Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT NMOS MODEL PARAMETERS SPICE RF Power Transistor spice AN002 ZERO Bias diode NMOS depletion pspice model depletion MOSFET SPICE AN001 "RF MOSFETs"
Text: FET switching characteristics and Finman has reported successful use of the model with RF MOSFETs. The , modei. L D RD ftCLAMP Figure 1. SPICE model of RF power DMOS FET . Components inside the dashed , contact. The level i model generally is not sufficiently accurate for DMOS devices while the more complex , to drain voltage. Finman1 has described a model for RF MOSFETs thai uses, in addition to a levei 1 NMOS model , a JFET and a network of controlled sources to model the effect of a AfifaCOM m m/acom

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AN001
jfet matching fixture
MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT
NMOS MODEL PARAMETERS SPICE
RF Power Transistor spice
AN002
ZERO Bias diode
NMOS depletion pspice model
depletion MOSFET SPICE
"RF MOSFETs"

NE27200
Abstract: NEC Microwave Semiconductors
Text: NONLINEAR MODEL SCHEMATIC Q1 LG GATE 0.25 nH NE27200 LD 0.14 nH DRAIN LS 0.01 nH SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA TQGAMMA TQGAMMAAC Q TQDELTA VBI IS N RIS RID TAU CDS RDB CBS CGS CGD DELTA1 DELTA2 FC VBR (1) ADS TOM Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the , Parameters RG RD RS RGMET TNOM XTI EG VTOTC BETATCE FFE Q1 1 4 3 0 27 3 1.43 0 0 1 MODEL RANGE

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NE27200
3e13
3e12
1e12
033e12
NE27200
NEC Microwave Semiconductors
