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Part Manufacturer Description Datasheet Download Buy Part
MK10DN32VFT5 NXP Semiconductors FLASH, 50MHz, RISC MICROCONTROLLER, QCC48
MK10DX256VLL7 NXP Semiconductors FLASH, 72MHz, RISC MICROCONTROLLER, PQFP100
MK10DX256VMD10 NXP Semiconductors 32-BIT, FLASH, 100MHz, RISC MICROCONTROLLER, PBGA144
MK10DN512ZVMD10 NXP Semiconductors 32-BIT, FLASH, 100MHz, RISC MICROCONTROLLER, PBGA144
MK10DX64VFM5 NXP Semiconductors FLASH, 50MHz, RISC MICROCONTROLLER, QCC32
MK10DX256ZVMD10 NXP Semiconductors 32-BIT, FLASH, 100MHz, RISC MICROCONTROLLER, PBGA144

fet MK10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
rds035

Abstract:
Text: 2SB1316 2SD1980 100 2 0.5 1 Note: *VG=4.5V. Small Signal MOS FET 2.5 Volts series , CPT3 PSD3 SOP8 Power MOS FET Package CPT3 The products listed in this catalogue are , , Milton Keynes MK10 0AD Telephone: +44 (0) 1908 282666 Facsimile: +44 (0) 1908 282528 Email


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PDF RHU002N06 2SD2167 56to270 2SB1132 2SD1664 82to390 2SB1188 2SD1766 2SB1182 2SD1758 rds035 rds035l03 fet MK10 MMST8598 SM6K2 RK7002 equivalent RHU002N06 2SK3065 2SC516 2SD2170
2010 - SSL21011

Abstract:
Text: ( : 0.8 mm2 Cu 90 %Cu 70 µm (390 W/mK) : 0.5 W/ mK10 ( 0.3 mm) 8 SSL2101_JA © NXP B.V , (V/t)vrec fring td(vrec-swon) N VO = 100 V [1] FET IL(DRAIN


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PDF SSL2101 SSL2101 SSL21011 fet MK10 SMPS IC SSL-2101 014aaa569 LED smps GU10 5 kw smps SSL2101T
E112 jfet

Abstract:
Text: =25µV typ) · High Gain (Yfs=30,000µS min) Photo FET · Light Sensitive N-Channel JFET · Second Source , Transistors Lateral DMOS FET Switches MOSFETs N Channel Enhancement Mode P/N N & P Channel , FET D3 P/N D3 D3 D3 LS627 D3 D3 µAmWcm2 min 6.4 BiFET Amplifier D5 D6 , MFE823 MK10 MMBF310 MMBF4391 MMBF4392 MMBF4393 MMBF4416 MMBF4860 MMBF5310 MMBF5457 MMBF5484


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PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
siliconix fet

Abstract:
Text: FET Design Catalog © 1979 Siliconix incorporated Printed In U.S.A. Siliconix incorporated reserves , use the FET Cross Reference and FET Cross Reference and Index , Index Tips on Selecting the Right FET for your How to Choose the Correct FET for your JFET


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PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
2004 - schematic diagram Power Tree UPS

Abstract:
Text: first FET switch devices designed for 3.3 V, supports next-generation, low-voltage systems. The new , . CBT/ CBT-C 5 TI offers over 70 different functions in its broad line of FET switches, bus , . CBTLV-2.5-V/3.3-V GeneralPurpose Bus Switch Family CBTLV3245 Logic Diagram A1 2 FET Switch , , undershoot is a concern when a switch is in the off state. With FET switches without undershoot protection , 16-Bit 1-of-2 FET Multiplexer/Demultiplexer This example is fairly common in telecom


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PDF 32-bit A070804 SCDB006A schematic diagram Power Tree UPS transistor crossreference schematic diagram UPS fet schematic diagram of laptop docking station SN74CB3Q16233 FET Transistor Guide FST3253 equivalent 1 into 12 demultiplexer circuit diagram IDTQS3VH244 schematic diagram online UPS
Not Available

Abstract:
Text: lD = 5 A ^ ds(on) -30 mQ (VG S = 10 V; isolation FET ) ^ ds(on) -80 mQ (VG S = 10 V; spindle , °C Rgs = 20 kQ Tsp = 50 °C1 spindle FETs; 8 = 33.3% Isolation FET (dc) spindle FETs isolation FET Tsp = 50 °C spindle FETs; 8 = 33.3% isolation FET (dc) Tsp = 50 °C spindle FETs; 8 = 33.3% isolation FET , resistance junction to solder point Thermal resistance junction to ambient CONDITIONS isolation FET spindle FET device soldered to FR4 board, minimum footprint. isolation FET spindle FET TYP. 20 43


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PDF PHN70308 PHN70308
IRF23N15

Abstract:
Text: backplane contacts meet. To meet this specification requires an FET switch that provides power to the high , power to a board. These mechanisms include: · Delayed turn on of the FET after application of power. · Manual or remote control of the FET to allow the device to be turned on only under system control or turned off prior to removal of the board. · Control of the gate FET base current for more manageable FET turn on characteristics. · Dual undervoltage thresholds for operation in a line or battery


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PDF AN169 X80070, X80070 /-50mV) X80071 IRF23N15 39A zener diode capacitor 200uF 12V 12v ZENER DIODE 300uF AN169 AN169 xicor MJD340 Zener diode 2A 300V
2007 - AN-1628

Abstract:
Text: ANALOG edge FET Application Note AN-1628 William Stokes, Applications Engineer POL , FET HSLSFET FET OUT DHSRDLS I R HS FETLS FET DHS FET 1-D LS FET D 2 HS FETLS FET Figure 2 / Figure 1 PWM LM5116DC/DC IN V HS FET RsLS FET FET / LS HS Figure 2. DC/DCHS FETLS FET LS FET FET V LSgateFET Q1 FET


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PDF AN-1628 LM5116DC/DC 12Vin1 570259-005-JP AN-1628 AN1628 fet mark GH mosfet F.E.T FET application LM5116 MARK LS
2008 - AVR354: Using the Deep Under-Voltage Recovery Mode (DUVR)

Abstract:
Text: Charging Li-Ion battery cells from 0V without using a pre-charge FET or current limiting resistor. · , commonly used method for high-side FET solutions is to apply a pre-charge FET in series with a resistor , for an NFET solution. The charge current is initially supplied through the pre-charge FET until the cell voltage rises to a level where it is safe to switch the charge FET completely ON. Switching on the charge FET with a deeply discharged battery cell will lead to immediate drop in the input voltage


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PDF AVR354: 056A-AVR-10/08 AVR354: Using the Deep Under-Voltage Recovery Mode (DUVR) 8056a V-FET 8056A-AVR-02 AVR354 Battery Charger with Atmel intelligent battery charger circuit diagram ATmega8hva ATmega8hvd ATmega16hva
2007 - AN-1628

Abstract:
Text: Low-Side (LS) MOSFET ( FET ) combinations. At lower input voltages it is often possible to use the same HS , from VIN through the HS FET to the output via the inductor; and alternately, from ground through Rs and the LS FET to the output. Power losses due to the FETs along this path tend to dominate all other losses. 30019102 Minimizing FET Losses For a High Input Rail Buck Converter Minimizing FET Losses For a High Input Rail Buck Converter FIGURE 1. Synchronous Buck Regulator Schematic


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PDF AN-1628 AN-1628 AN1628 LM5116 step-down voltage regulator
IRF9210

Abstract:
Text: 93 93 96 96 100 100 98 98 102 102 104 104 TR : Transistor, L I : Linear, FET : MOSFET, MPR , IRF624 IRF625 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642 IRF643 DESCRIPTION FET , 60V, 5R, 0.2A, 0.4W, N-CH, TO-92 FET , 100V, 0.54R, 5.6A, 43W, N-CH, TO-220 USE IRF510 USE IRF510 USE IRF510 FET , 100V, 0.27R, 9.2A, 60W, N-CH, TO-220 USE IRF520 USE IRF520 USE IRF520 FET , 100V, 0.15R, 14A, 77W, N-CH, T0-220 USE IRF530 USE IRF530 USE IRF530 FET , 100V, 0.077R, 28A, 125W, N-CH, TO-220 USE IRF540 USE IRF540 USE


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PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F KSH117-1 NPN Transistor 600V 5A TO-220 transistor irf620
2005 - IRF23N15

Abstract:
Text: the board when the board and the backplane contacts meet. To meet this specification requires an FET , overvoltage and undervoltage options are shown in Table 1 below. · Delayed turn on of the FET after application of power. · Manual or remote control of the FET to allow the device to be turned on only under system control or turned off prior to removal of the board. · Control of the gate FET base current for more manageable FET turn on characteristics. The active undervoltage detector is selected by the


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PDF X80070, AN169 X80070. X80070 100ms /-50mV) IRF23N15 39A zener diode MJD340
1999 - TRANSISTOR SMD MARKING CODE s7

Abstract:
Text: level compatible · Surface mount package D4 PHN70308 SYMBOL isolation FET S4 G4 QUICK , FET ) RDS(ON) 80 m (VGS = 10 V; spindle FETs) G1 S1 G2 S2 G3 S3 GENERAL DESCRIPTION This , 150°C RGS = 20 k Tsp = 50 °C1 spindle FETs; = 33.3% Isolation FET (dc) spindle FETs isolation FET Tsp = 50 °C spindle FETs; = 33.3% isolation FET (dc) Tsp = 50 °C spindle FETs; = 33.3% isolation FET , point Thermal resistance junction to ambient CONDITIONS isolation FET spindle FET device soldered to FR4


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PDF PHN70308 PHN70308 OT341 TRANSISTOR SMD MARKING CODE s7 marking code G7 SMD Transistor g3 smd transistor SMD Transistor G6 SMD Transistor Marking Code S7 TRANSISTOR SMD MARKING CODE GFs SMD Transistor g5 smd transistor g3 g3 smd transistor view FET MARKING CODE s5
2009 - PA1005

Abstract:
Text: / powerdesigner No. 127 - By David Baba, Product Applications Engineer L ID FET (a , FET FET L FET + VL (t) - FET (b) VIN IL (t) IC (t) + C - FET L LM5112 IL (t) - VL (t) + (c) VIN IC (t) + C - PowerWise® LM25037 Figure 1. D(1-D) LM5020 FET TS VIN VOUT , ) FET (c) t VOUT = (c) DTS (1-D) TS Figure 2. VIN (1-D) POWER designer L


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PDF LM5112 LM25037 LM5020 PA1005 PA1005.100NL SER2013-362ML sir472 LM5020 35SVPD47M SiR472DP SiR468DP LM25037AMT DO1813
1999 - "Transistor Array"

Abstract:
Text: FET S4 VDS = 25 V G4 ID = 5 A RDS(ON) 30 m D4 G6 G7 (VGS = 10 V; isolation FET , - 55 Tsp = 50 °C1 spindle FETs; = 33.3% Isolation FET (dc) spindle FETs isolation FET Tsp = 50 °C spindle FETs; = 33.3% isolation FET (dc) Tsp = 50 °C spindle FETs; = 33.3% isolation FET , Thermal resistance junction to solder point Thermal resistance junction to ambient isolation FET spindle FET device soldered to FR4 board, minimum footprint. isolation FET spindle FET Rth j-a


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PDF PHN70308 PHN70308 "Transistor Array" TRANSISTOR ARRAY fet nc SSOP28
1999 - Not Available

Abstract:
Text: PRELIMINARY DATA SHEET OCMOS FETTM PS7142-1B,-2B,PS7142L-1B,-2B 6, 8-PIN DIP OCMOS FET (1-ch, 2-ch OCMOS FET ) DESCRIPTION The PS7142-1B, -2B and PS7142L-1B, -2B are solid state relays , NC MOS FET Drain MOS FET Source MOS FET Drain LED Anode LED Cathode NC MOS FET Drain MOS FET Source MOS FET Drain 7.62 6.5±0.5 6.5±0.5 3.3±0.3 4.15±0.3 3.5±0.3 3.5±0.3 1.34±0.1 0.25 M , Anode 2. LED Cathode 3. LED Anode 4. LED Cathode 5. MOS FET 6. MOS FET 7. MOS FET 8. MOS FET 1


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PDF PS7142-1B PS7142L-1B PS7142-1B, PS7142L-1B,
how to check an ic working or not

Abstract:
Text: for ­ 48V input DC-DC converters. The front side of the demo board is shown in Fig. 1. FET Check , 1/8 and 1/4 Brick connections IRF6644 Input A- Output- Input B- FET Check Switch , . The IRF6662, 17.5mOhm typical Rds(on), 100V, N-Channel active ORing FET is ideal for up to 200W , FET should be selected for a Vsd drop of greater then 50mV during conduction. Eight 3.3uF, 80V , Vgs 4A reverse current Fet turn off Vds Applied short 0A 120ns 3A, 150W 3V bus


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PDF IRDC5001-LS370W IR5001S IRF6644 300mV how to check an ic working or not IR2085S ir2085 48v mosfet switch 48v to 5v dc schematic IRDC2085S-DF IRF644 IRF6662 irdc2085s-s
1999 - calculating of switching transformer

Abstract:
Text: 200W off line single transistor forward converter operating at 100kHz. FET Type1 FET Type2 FET Type 3 FET Type 4 FET Type 5 FET Type 6 3.65 2.54 2.63 2.63 1.86 3.93 3.15 3.12 2.95 2.91 2.80 , Ptotal FET Power Dissipation In A Typical 100 KHz. Offline Hard Switching RCD Reset Forward Converter , Ptotal 2 1 0 FET Type1 FET Type2 FET Type 3 FET Type ) Devices ( Power MOSFET4 FET Type 5 FET Type 6 Fig. 4: FET Loss Distribution Comparison @ 100kHz. Figure 5 shows the same


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PDF 20kHz 100kHz. calculating of switching transformer 200khz power mosfet test circuits for Mosfet capacitance mosfet power totem pole CIRCUIT pulse transformer fet calculating rectifier circuits zvs ZCS 3 5 3 5 forward converter zvs driver fast switching FET
P-Channel Depletion Mode FET

Abstract:
Text: field-effect transistor ( FET ) has been known since J.E. Lilenfeld's patent of 1925. The theoretical description of a FET made by Schockley in 1952 paved the way for development of a classic electronic device which , an insight into the nature of the FET , and touches briefly on its basic characteristics, terminology and parameters, and typical applications. The following list of FET applications indicates the versatility of the FET family: Current Limiters Voltage-Con tro lied Resistors Mixers Oscillators Amplifiers


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PDF
Ultrasonic Cleaning transducer generator

Abstract:
Text: . OCMOS FET CONTENTS 1. INTRODUCTION , . INTRODUCTIION The SSR that NEC has started marketing uses a photocoupler system with a MOS FET , explained in , switch. NEC's SSR is named a "OCMOS FET (Opto-Coupled MOS FET )" as the input and output are isolated with a photocoupler and the MOS FET switch is used as an output switch. The OCMOS FET using a photo Detector to drive the MOS FET is a new type of SSR developed recently and being commercialized. An OCMOS


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PDF
PLUGGING BRAKING DIAGRAM

Abstract:
Text: FET gate-to-ground clamps and fault output circuitry. VGATE (Gate Drive Supply) powers the FET gate , FET 's gates are clamped to their sources and "off" state diagnostics are active. When a bridge is , and B2 Sense L and R are load's upper left FET source (also the lower left FET drain) and the upper right FET source (also the lower right FET drain). They are used to clamp the respective FET 's gate , FET sources. B1 and B2 Gate Drives are the outputs that drive the gates of each bridge's FETs. Each


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PDF Si9600EY 03-Dec-96 PLUGGING BRAKING DIAGRAM Complementary MOSFET Half Bridge PWM and Sense FET si9600 SQFP-48
1997 - ATP-1054

Abstract:
Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II , GaAs FET ? . B. Active Layer , . D. FET Elements that Affect Microwave Performance . E. Why a GaAs FET Instead of a , How Does The FET Work? . Electrical and , GaAs FET data sheets, advertisements and other technical communications. Some of these terms are


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PDF ATP-1054, 5963-2025E 5966-0779E ATP-1054 high frequency transistor ga as fet bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
2003 - dock connector

Abstract:
Text: Application Report SZZA039 - August 2003 FET Switches in Docking Stations Stephen M. Nolan , report explains the use of TI FET bus-switch products with precharge to accomplish this connection , FET Switches for Docking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . FET Switches Onboard the Mobile System . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . FET Switches


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PDF SZZA039 dock connector laptop docking station SN74CBT6800A SN74CBTK6800 SN74CBTLV16800 SN74CBTS6800
1998 - g3dz-2r6pl

Abstract:
Text: G3DZ Power MOS FET Relay SSR Identical to the G6D in Size with a Maximum AC/DC Switching , Load MOS FET Relay Input Load Connection When connecting a load generating a high inrush current (such as a lamp load) to the MOS FET Relay, make sure that the MOS FET Relay can withstand the inrush current. OMRON's datasheets show the non-repetitive peak value of the MOS FET Relay's inrush current durability. Normally allow 1/2 of this inrush current to flow through the MOS FET Relay. If an


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PDF 500-VAC g3dz-2r6pl P6D-04P
2009 - DRV88XX

Abstract:
Text: which FET is enabled, current is made to flow in one direction or the other. VM VM AH BH , FET switch, which will start conducting as soon as the FET switches are disabled. A more efficient way to handle this current is to enable/disable FET switches in a sequence that carries the decaying , ith the FET Sw itches AL BL Figure 2. Free Wheeling Diodes 2 Current Recirculation and , , this is referred to as asynchronous decay. It is asynchronous to the controller turning the FET


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PDF SLVA321 DRV88xx SLVA321 abstract for wireless motor control through rf abstract for wireless STEPPER motor control through rf Analog FET Switch fet fast switch
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