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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
ISL6146CFRZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146AFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146CFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146AFUZ-T7A Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146DFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146AFRZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C

fet K 727 Datasheets Context Search

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Avantek S

Abstract: AVANTEK transistor ATF-20136
Text: GHz General Purpose Gallium Arsenide FET Features · High Associated Gain: 12.5 dB typical at 4 GHz , gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FET device , ". Avantek, Inc. · 3175 Bowers Ave., Santa Clara. CA 95054 · Phone (408) 727 *0700 · FAX , V A N T E K INC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain , -10736, 0.5-12 GHz General Purpose Gallium Arsenide FET 1 nc(or u T-31-25 Absolute M aximum1 +5 V -4


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PDF 000bS3c ATF-10736 ATF-20136) ATF-10736 371-8717or Avantek S AVANTEK transistor ATF-20136
2007 - mgf4941al

Abstract: MITSUBISHI electric R22 GD-32
Text: Preliminary 19/Jan./2007 MITSUBISHI SEMICONDUTOR FET > MGF4941AL SUPER LOW NOISE , 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION C to K band low , MITSUBISHI (1/6) Preliminary 19/Jan./2007 MITSUBISHI SEMICONDUTOR FET > MGF4941AL SUPER LOW , MITSUBISHI SEMICONDUTOR FET > MGF4941AL SUPER LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS ID , MITSUBISHI SEMICONDUTOR FET > MGF4941AL SUPER LOW NOISE InGaAs HEMT S PARAMETERS (VDS=2V,ID


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PDF 19/Jan MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MITSUBISHI electric R22 GD-32
2006 - MGF4941AL

Abstract: MGF4941 GD-32
Text: Preliminary 26/Dec./2006 MITSUBISHI SEMICONDUTOR FET > MGF4941AL SUPER LOW NOISE , . = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) APPLICATION C to K , µA mA V dB dB MITSUBISHI (1/5) Preliminary 26/Dec./2006 MITSUBISHI SEMICONDUTOR FET , ) ASSOCIATED GAIN, Gs (dB) 1.0 14 Preliminary 26/Dec./2006 MITSUBISHI SEMICONDUTOR FET , 2.08 Preliminary 26/Dec./2006 MITSUBISHI SEMICONDUTOR FET > MGF4941AL SUPER LOW NOISE


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PDF 26/Dec MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MGF4941 GD-32
AVANTEK

Abstract: MGA-65100-GP0 MGA-65100-GP2 MGA-65100-GP6 S2112 GaAs FET chip AVANTEK transistor 1.57 GHz TRANSISTOR
Text: Qavantek MG A-65100 Medium Power 2 Stage GaAs FET Cascade Features • Unmatched 2 Stage FET Cascade • High Output Power: 24 dBm typical Pi dB at 14 GHz • High Gain: 9.5 dB typical Gi , frequency gain stage in industrial and military applications. This MMIC uses a cascade of two FET pairs to yield a device with higher gain and higher input impedances than a conventional discrete FET . AC , Outline J rii" o= ] iL üllllll 'r ili I 1 ] ( Lis ft k . i ■o IIIIII I ° lo _ 39 mit 1.0 mm Chip


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PDF MGA-65100 AVANTEK MGA-65100-GP0 MGA-65100-GP2 MGA-65100-GP6 S2112 GaAs FET chip AVANTEK transistor 1.57 GHz TRANSISTOR
2007 - GD-32

Abstract: mgf4941al fet K 727
Text: MITSUBISHI SEMICONDUTOR FET > Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT , .) Fig.1 High associated gain @ f=12GHz Gs = 13.5dB (Typ.) APPLICATION L to K band low noise , . MITSUBISHI (1/6) V MITSUBISHI SEMICONDUTOR FET > Dec./2007 MGF4941AL SUPER LOW NOISE , ) MITSUBISHI SEMICONDUTOR FET > Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT TYPICAL , , ID (mA) MITSUBISHI (3/6) 0.0 MITSUBISHI SEMICONDUTOR FET > Dec./2007 MGF4941AL


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PDF MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 fet K 727
2007 - top 261

Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi
Text: MITSUBISHI SEMICONDUTOR FET > 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT , .) Fig.1 High associated gain @ f=12GHz Gs = 13.5dB (Typ.) APPLICATION L to K band low noise , . MITSUBISHI (1/6) V MITSUBISHI SEMICONDUTOR FET > 18/May/2007 MGF4941AL SUPER LOW NOISE , ) MITSUBISHI SEMICONDUTOR FET > 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT TYPICAL , , ID (mA) MITSUBISHI (3/6) 0.0 MITSUBISHI SEMICONDUTOR FET > 18/May/2007


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PDF 18/May/2007 MGF4941AL MGF4941AL 12GHz GD-32 4000pcs top 261 GD-32 InGaAs HEMT mitsubishi
Not Available

Abstract: No abstract text available
Text: O avan tek MGA-63100 Medium Power 2 Stage GaAs FET Cascade Avantek Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 22 dBm typical Pi < at , applications. 1.02 mm This MMIC uses a cascade of two FET pairs to yield a device with higher gain and higher input impedance than a conventional discrete FET . AC grounded sources and an internal resistive , cla ra , CA 95054 . Phone (408) 727 0700 • 5-12 FAX: (408) 727-0539 • TWX


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PDF MGA-63100 MGA-63100
817 CN

Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in , follows. K : 30 to 100 mA M : 50 to 100 mA 2 9.5 10.5 1.4 dB dB TEST CONDITIONS , /IAG. (deg.) S 22 ANG. MAG. (deg.) MSG K ANG. (deg.) dB 500 .992 , -27.6 3.477 142.4 .043 77.7 . 727 -13.8 19.1 .47 1200 .894 -29.8


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PDF NE76118 E76118 NE76118-T1 NE76118-T2er IR30-00-2 817 CN
AVANTEK oscillator

Abstract: Avantek rf amplifier Avantek amplifier 140 Avantek atf-1323
Text: Noise Gallium Arsenide FET _ ^ T - 3 > ) - Z S Features · Low Noise Figure: 1.1 dB typical , oscillator applications in the 2-18 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate , . Avantek, Inc. · 3175 Bowers Avs., Santa Clara, CA 95054 . Phona (408) 727 0700 · FAX: (408) 727-0539 . , limTbb 0QGb545 ATF-13100, 2-18 GHz Low Noise Gallium Arsenide FET Absolute Maximum Ratings P , , Inc. · 3175 Bowers Ave., Santa Cta/a, CA 95054 · Phone (408) 727-0700 · FAX: (408) 727 *0539


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PDF 0GGb544 ATF-13100 rel-48 AVANTEK oscillator Avantek rf amplifier Avantek amplifier 140 Avantek atf-1323
2010 - Not Available

Abstract: No abstract text available
Text: FET quad in a ring configuration providing high dynamic range performance in a small, low cost , K TYP LO-RF ISOLATION (dB) IF fL-fU INDEX The +Suffix has been added in order to , 700.10 740.10 760.10 780.10 750.10 770.10 810.10 830.10 850.10 6.78 6.83 7.07 7.20 7.27 , 900.10 870.10 910.10 930.10 950.10 970.10 7.27 7.50 7.63 7.74 7.89 38.88 38.34 38.13 , 6.91 B .310 7.87 C .220 5.58 D .100 2.54 H .030 0.76 J .026 0.66 K .065


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PDF ADE-92+ 20dBm CD636
2010 - Not Available

Abstract: No abstract text available
Text: balanced mixer featuring a FET quad in a ring configuration providing high dynamic range performance in a , . G TYP Typical Performance Data PCB Land Pattern Frequency (MHz) G TYP K TYP LO-RF , 780.10 750.10 770.10 810.10 830.10 850.10 6.78 6.83 7.07 7.20 7.27 36.74 36.59 36.99 , 910.10 930.10 950.10 970.10 7.27 7.50 7.63 7.74 7.89 38.88 38.34 38.13 38.03 37.94 , 7.87 C .220 5.58 D .100 2.54 H .030 0.76 J .026 0.66 K .065 1.65 E .162


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PDF ADE-92+ 20dBm CD636
2012 - UTT100N08

Abstract: RG04
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N08 N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION Power MOSFET The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTC , Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502- 727 .a UTT100N08 Preliminary , TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R502- 727 .a UTT100N08 Preliminary Power , 3 QW-R502- 727 .a Unisonic Technologies


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PDF UTT100N08 UTT100N08 O-220 UTT100N08L-TA3-T UTT100N08G-TA3-T QW-R502-727 RG04
ATF-13284

Abstract: No abstract text available
Text: PACKARD f T c ' X Ï 8? w · If1® . GHz Low Noise Gallium Arsenide FET Features Low Noise Figure: 0.7 , range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 , Semiconductors". 7-26 44475Ö4 D D D 'ìfl'n bfl4 I HPA _ H E Ii)LE TT-P A C K A R D , Gallium Arsenide FET Symbol V ds V gs Ids Pt Tch T s tg Absolute Maximum1 +5 V -4 V IDSS 225 mW , -8 4 7-27


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PDF ATF-13284
Not Available

Abstract: No abstract text available
Text: ¥ho% HEWLETT mL'fíMP a c k a rd Features · · · Low Noise Figure: 0.7 dB typical at 4 GHz High , Arsenide FET 84 Plastic Package Description The ATF-13284 is a high performance gallium arsenide , GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate , Semiconductors" . 7-26 ATF-13284,1-16 GHz Low Noise Gallium Arsenide FET Absolute Maximum Ratings , .39 .33 .25 .19 .14 .12 .12 .15 .21 .28 .36 7-27


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PDF ATF-13284
ATF-45100

Abstract: AVANTEK transistor
Text: A V A N T E K INC SDE D llHllfab G O O b S T l 7 ^ AVAN TEK ^ -m m ATF-45100 (AT-8151) 2.-|2 GHz Medium Power Gallium Arsenide FET T-3l-2.£ Features · · · High Output Power: 29.0 dBm , frequency range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure , Channel Temperature Storage Temperature Medium Power Gallium Arsenide FET Symbol VDS Vg s Ids , (408) 727 *0700 · FAX: (408) 727-0539 · TWX: 310-371-8717 or 310-371-8478 · TELEX: 34


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PDF ATF-45100 AT-8151) ATF-45100 AVANTEK transistor
NEC Ga FET marking L

Abstract: marking K gaas fet nec gaas fet marking NEC Ga FET marking V NEC Ga FET marking Rf NEC Ga FET marking A NEC Ga FET "marking V" NEC Ga FET nec 9000 NE76184B
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion , CONDITIONS VDD = 3 V f = 4 GHz ID = 10 mA f = 12 GHz IDSS rank is specified as follows. ( K : 30 , 8.08 7.27 6.72 6.15 5.59 5.23 4.95 4.68 4.45 3.97 3.73 GAmax. dB |S21|2 dB |S12|2 dB K Delay ns Mason's U dB G1 dB G2 dB 10.48 9.37 8.98 8.66 8.41 10.43


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PDF NE76184B NE76184B NE76184B-T1 NE76184B-T1A NEC Ga FET marking L marking K gaas fet nec gaas fet marking NEC Ga FET marking V NEC Ga FET marking Rf NEC Ga FET marking A NEC Ga FET "marking V" NEC Ga FET nec 9000
NEC Ga FET marking Rf

Abstract: nec gaas fet marking
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ce ram ic package. The device is fabricated by ion im , Ga Gs V - 10 mA Id s s rank is specified as follows. ( K : 30 to 100 mA, N: 30 to 65 mA, M , AMP PARAMETERS V ds NE76184B = 3 V , Id = 10 mA K Delay ns .064 .064 .058 .052 .048 , 10.41 9.21 8.08 7.27 6.72 6.15 5.59 5.23 4.95 4.68 4.45 3.97 3.73 dB dB 10.43 9.56 8.50 7.59 6.65


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PDF NE76184B NE76184B NE76184B-T1 NE76184B-T1A IR30-00 NEC Ga FET marking Rf nec gaas fet marking
2008 - RP902

Abstract: No abstract text available
Text: changing the output voltage dramatically from 72.7 % to 100%. (The output voltage range is between 11V and 8.0V ( 72.7 %) when the default output voltage is set to 11V by the external feed-back) To using the , ···································Max.300mA(When internal FET is used ) ·Reset type protection function ··········Typ.1.5ms VD ·Voltage , x ­ E2 a b c d Code a b c d e f g Part Number Contents Designation of Package Type K , options2. The start order A B C D f E F G H J K L M g DCDC12 DCDC12 DCDC12 DCDC12 DCDC12 DCDC12 DCDC21


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PDF RP902 EA-196-080311 RP902
1997 - D450 Nchannel

Abstract: C10535E NE76118 NE76118-T1 NE76118-T2 NEC 3536
Text: DATA SHEET DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS NE76118 is a n-channel GaAs MES FET housed in MOLD , as follows. K : 30 to 100 mA M : 50 to 100 mA 2 9.5 10.5 1.4 dB dB TEST , . (deg.) S22 ANG. MAG. (deg.) MSG K ANG. (deg.) dB 500 ð12.2 3.647 , ð27.6 3.477 142.4 .043 77.7 . 727 ð13.8 19.1 .47 1200 .894 ð29


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PDF NE76118 NE76118 NE76118-T1 NE76118-T2 D450 Nchannel C10535E NE76118-T1 NE76118-T2 NEC 3536
AVANTEK transistor

Abstract: No abstract text available
Text: A V A N T E K INC 20E D HMlTbb ODGbSfl? S ATF-44100 (AT-8141) 2-8 GHz Medium Power Gallium Arsenide FET T-3I-2S Features · · · High Output Power: 32.0 dBm typical Pi da at 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz High Power Efficiency: 36% typical at 4 GHz , Cla/a, CA 95054 · Phone {408} 727-0700 · FAX: (408) 727 *0539 · TWX: 310-371-8717 or , ATF-44100, 2-8 GHz Medium Power Gallium Arsenide FET Absolute Maximum Ratings Param eter


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PDF ATF-44100 AT-8141) AVANTEK transistor
2000 - 7720-1A

Abstract: BI 7720 7720-2A 7720-3A 420L40
Text: switching power supply. - Rectifier bridge - Ultrafast platinum output diode - 500V .1 Max. FET (7720-1A , / 168 V rms. Specifications subject to change without notice. 7-27 Model 7720 Series 7 , Capacitance Ciss Gate Resistor RG Junction Temperature Thermal Resistance FET Tj Rthjc , ns °C °C/W °C/W K mW/°C sec 1 - TCase = 25°C unless otherwise specified. 7-28 Model


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PDF 720-1A 720-2A 720-3A 720-1A) O-220 O-247 7720-1A BI 7720 7720-2A 7720-3A 420L40
at8250

Abstract: AT82 AVANTEK transistor
Text: AVANTEK INC 20E J> ATF-25170 (AT-8250) 0.5-10 GHz Low Noise Gallium Arsenide FET O avantek 'T-'zi-zs Features · · · · Low Noise Figure: 0.8 dB typical at 4 GHz High Associated Gain , Saturated Drain Current: V d s = 3 V, V g s = 0 V Pinohoff Voltage: Vos = 3 V, I d s = 1 mA A v tn le k , lm n b b QOGbSbT 3 ATF-25170, 0.5-10 GHz Low Noise Gallium Arsenide FET Absolute Maximum , /sA v8., Santa C /ara,C A 95054 * Pfiona (408) 727-0700 · FAX; (4CS) 727 *0539 · TWX


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PDF ATF-25170 AT-8250) at8250 AT82 AVANTEK transistor
AT10650-5

Abstract: B717 AT-10650-5 ATF-26550 AVANTEK transistor k 246 transistor fet ATF26550 AVANTEK 2-18 GHz Low Noise Gallium Arsenide FET atf 10650
Text: Purposë " Gallium Arsenide FET T-l.V-2.5 Features • High Associated Gain: 8.0 dB typical at 12 GHz , amplifiers operating in the 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate , FET Parameter Symbol Absolute Maximum1 Drain-Source Voltage Vos +7 V Gate-Source Voltage Vos -tv , section. Avants k , Inc. . 3175 Bowers Ave., Santa Clara, CA 95054 . Phone (40fl) 727-0700 . FAX: {408) 727 *0539 • TWX: 310-371-8717 or 310-371-8478 . TELBC34-6337 3-53 Powered by ICminer.com


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PDF ATF-26550 AT-10650-5) ATF-26550 TELBC34-6337 AT10650-5 B717 AT-10650-5 AVANTEK transistor k 246 transistor fet ATF26550 AVANTEK 2-18 GHz Low Noise Gallium Arsenide FET atf 10650
2012 - Not Available

Abstract: No abstract text available
Text: enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state , ., Ltd (3) G: Halogen Free, L: Lead Free 1 of 3 QW-R502- 727 .a UTT100N08 ̈ Preliminary , 0.65 1.0 1.3 1.5 2 A A V Ω 2 of 3 QW-R502- 727 .a UTT100N08 Preliminary , www.unisonic.com.tw 3 of 3 QW-R502- 727 .a Unisonic Technologies


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PDF UTT100N08 UTT100N08 UTT100N08L-TA3-T UTT100N08G-TA3-T QW-R502-727
2008 - FLM1415-8F

Abstract: FLM1415-8 ED-4701
Text: FLM1415-8F X,Ku-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm(Typ , Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM1415-8F is a power GaAs FET that is , /W o C G.C.P.: Gain Compression Point FLM1415-8F X,Ku-Band Internally Matched FET OUTPUT , Power Dissipation [W] 50 FLM1415-8F X,Ku-Band Internally Matched FET S-PARAMETER +90° , 26.6 6.4 -13.6 -33.4 -53.1 - 72.7 -91.9 S22 MAG ANG 0.412 0.372 0.334 0.295 0.260 0.236


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PDF FLM1415-8F FLM1415-8F 1906B, FLM1415-8 ED-4701
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