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Part Manufacturer Description Datasheet Download Buy Part
LTM4600DCM#PBF Linear Technology IC DC/DC UMODULE 10A 104-LGA
LT1581CT7#06PBF Linear Technology LT1581 - 10A, Very Low Dropout Regulator; Package: TO-220; Pins: 7; Temperature: Commercial
LT1581CT7#PBF Linear Technology LT1581 - 10A, Very Low Dropout Regulator; Package: TO-220; Pins: 7; Temperature Range: 0°C to 70°C
LT1581CT7-2.5 Linear Technology LT1581 - 10A, Very Low Dropout Regulator; Package: TO-220; Pins: 7; Temperature Range: 0°C to 70°C
LT1581CT7-2.5#PBF Linear Technology LT1581 - 10A, Very Low Dropout Regulator; Package: TO-220; Pins: 7; Temperature Range: 0°C to 70°C
LT1581CT7 Linear Technology LT1581 - 10A, Very Low Dropout Regulator; Package: TO-220; Pins: 7; Temperature Range: 0°C to 70°C

fet 500v 10A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IRF9210

Abstract:
Text: IRF730 USE IRF730 FET , 400V, 0.55R, 10A , 125W, N-CH, TO-220 USE IRF740 USE IRF740 USE IRF740 FET , 500V , 3.OR, 2.5A, 50W, N-CH, TO-220 USE IRF820 USE IRF820 USE IRF820 FET , 500V , 1.5R, 4.5A, 75W, N-CH, TO-220 USE IRF830 USE IRF830 USE IRF830 FET , 500V , 0.85R, 8.0A, 125W, N-CH, TO-220 USE IRF840 USE IRF840 USE IRF840 , , 0.55R, 5.5A, 40W, N-CH, TO-220F USE IRFS740 USE IRFS740 USE IRFS740 FET , 500V , 1,5R, 3.0A, 35W, N-CH, T0-220F USE IRFS830 USE IRFS830 USE IRFS830 FET , 500V , 0.85R, 4.5A, 40W, N-CH, TO-220F USE IRFS840 USE IRFS840


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PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F KSH117-1 NPN Transistor 600V 5A TO-220 transistor irf620
IFRZ44

Abstract:
Text: SSH10N70 FET , 700V, 1.2R, 10A , 150W, N-CH, TO-3P USE SSH10N70 SSH10N70A FET , 500V , 0.35R, 20A, 150W, N-CH , IRF740 IRF741 IRF742 1RF743 FET , 400V, 0.55R, 10A , 125W, N-CH, T0-220 USE IRF740 USE IRF740 USE IRF740 IRF820 IRF821 IRF822 IRF823 FET , 500V , 3.0R, 2.5A, 50W, N-CH, T0-220 USE IRF820 USE IRF820 USE IRF820 IRF830 IRF831 IRF832 IRF833 FET , 500V , 1.5R, 4.5A, 75W, N-CH, T0-220 USE IRF830 USE IRF830 USE IRF830 IRF840 IRF841 IRF842 IRF843 FET , 500V , 0.85R, 8.0A, 125W, N-CH, T0-220 USE


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PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT Transistor mc7812ct KA336Z IRFZ44 PNP high voltage pnp transistor 700v KS82C670N
1995 - V10N50BE

Abstract:
Text: RFV10N50BE S E M I C O N D U C T O R 10A , 500V , Fast Switching N-Channel Enhancement-Mode Power MOSFETs August 1995 Features Package · 10A , 500V JEDEC STYLE 5 LEAD TO-247 · rDS , = 400V, ID = 10A , RL = 40 VDS = 25V, VGS = 0V, f = 1MHz Control FET Specifications LIMITS , VGS Control FET Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Control FET Avalanche


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PDF RFV10N50BE O-247 RFV10N50BE 1-800-4-HARRIS V10N50BE AN7254 AN7260 fet 500v 10A
2007 - TH 2190 mosfet

Abstract:
Text: 100 µA VIN=5V, V+= 500V RDS(ON) Drain-to-Source On Resistance - 2.2 2.7 ID= 1.0A , VDD=15V ID= 1.0A , VDD=15V, TJ=150°C VFM Diode Forward Voltage Drop - 5.5 - - 0.87 1.0 - 0.76 - Units Conditions V IF= 1.0A IF= 1.0A , TJ=150°C Recommended , Applications 3 Phase Inverter HIC 2A, 500V Description International Rectifier's IRAM336-025SB is a , @ TC=25°C Maximum Peak Current (tp<100µs) 6.0 Pd Maximum Power dissipation per Fet @ TC


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PDF PD-97277 IRAM336-025SB IRAM336-025SB IRAM136-025SB AN-1049. TH 2190 mosfet TH 2190 mosfet isolated AN-1044 AN-1049 DN 98-2a, application note AN-1044 marking R1E
2007 - S 170 MOSFET TRANSISTOR

Abstract:
Text: RDS-ON IGBT · 250V 1000V MOSFET IGBT IGBT MOSFET · 80% 500V MOSFET 400V , 13 N FET FET N MOSFET FET - 10 Q1 Q2 MOSFET DS00898A_CN 6 , Microchip Technology Inc. AN898 11 IC IC FET /IGBT Q2 Q1 / VBIAS D1 Cboot Q2 Q1 , Microchip Technology Inc. MOSFET IGBT MOSFET IGBT / 500V 20A 600V 20A MOSFET IGBT , VGS ID = 250 µA IDSS - - - - - 25 250 µA VDS = 500V VGS = 0V VDS = 400V


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PDF AN898 DS00898A S 170 MOSFET TRANSISTOR 600v 20a IGBT igbt 400V 20A MOSFET 1000v 30a igbt 500V 15A mosfet 600V 20A IGBT Designers Manual HEXFET Power MOSFET Designers Manual AN898 igbt 1000v 30a
2003 - Not Available

Abstract:
Text: RLOAD = 1.0⠍€ IOUT, 4A/DIV 3 IOUT, 0.5A/DIV 3 VIN, 5V/DIV 4 4 CH1 5.00V CH2 5.00V M 20.0␮s CH3 120mV CH1 5.00V CH3 50.0mV TPC 10. Fast Current-Limit Response B W CH2 5.00V M 50.0␮s CH1 CH4 5.00V VFAULT 2.2V TPC 13. Switch Turn-On Time VON T VFAULT , MAIN FET IN (2.7V TO 5.5V) OUT MIRROR AMPLIFIER MIRROR FET ON 22␮F 0.1␮F SET , 16-Lead QSOP Package: θJA = 50°C/W, θJC = 10 °C/W ORDERING GUIDE Model Temperature Range


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PDF ADM869L 16-Lead ADM869L MO-137AB
12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract:
Text: BBM setting. Tripath recommends using an R of 10 when the gate charge (Qg) of the output FET is less , information on output FET selection as well as Tripath application notes "FETs ­ Selection and Efficiency , leads, as close as possible to the FET . Only Schottky diodes should be used here due to t eir very low , FET drivers on the TA0102A. This supply must track the Vsneg rail, and so, for simplicity, this , MUR120 200V L1 11.3UH 10A 10% 2 2 LED1 3 R5 33 1W 5% NS D2 MUR120 200V


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PDF EB-TA0102 EB-TA0102 TA0102A 24AWG 18AWG 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 300w subwoofer amplifier PCB layout subwoofer PREAMP circuit diagram 150w subwoofer amplifier circuit diagram 300W subwoofer CIRCUIT DIAGRAM SCHEMATIC 300w power amplifier stereo 2 channel 300w stereo amplifier Amidon Tech 100v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 300w audio mono amplifier circuit diagram
500w subwoofer amplifier circuit diagram

Abstract:
Text: using an R of 10 when the gate charge (Qg) of the output FET is less than 70nC and G 5.6 when the Qg , evaluation board are ST STW38NB20 MOSFETs. The TA0103A data sheet contains information on output FET , to the FET . Only Schottky diodes should be used here due to t eir very low forward voltage drop and , to provide the voltage rail for the low side FET drivers on the TA0103A. This supply must track the , 1W 5% V5 D1 MUR120 200V L1 11.3UH 10A 10% 2 2 LED1 3 R5 5.6 1W 5


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PDF EB-TA0103 EB-TA0103 TA0103A 24AWG 18AWG J151-ND J152-ND J155-ND 500w subwoofer amplifier circuit diagram 500w audio amplifier circuit diagram 500w power amplifier pcb diagram schematic diagram inverter 500w USING MOSFET schematic diagram PC Power supply 500w 500w audio power amplifier circuit diagram subwoofer PREAMP circuit diagram schematic diagram audio amplifier 500w 500W Audio Amplifier with MOSFET schematic diagram
Not Available

Abstract:
Text: switching power supply. - Rectifier bridge - Ultrafast platinum output diode - 500V .1Ω Max. FET , Capacitance Ciss Gate Resistor RG Junction Temperature Thermal Resistance FET Tj Rthjc , Voltage D5 Tj Rthjc Conditions1 VDS = 500V , VGS = 0V 7720-X -1 -2 -3 IDS = 28A, VGS = , ,-3 VR = 600V, t = 150°C -1,-2,-3 IF = 1.0A , di/dt = 100A/µs -1,-2,-3 IF = 25A, di/dt = 100A , Filter 25A 10⠄¦ Dotted Line denotes – BI Model 7720 and associated pins. Pin 1: AC 1 Pin 2


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PDF 720-1A 720-2A 720-3A 720-1A) O-220 O-247
diode 400V 4A

Abstract:
Text: -11 / MBA-22 Ue 690V Ith 10A MCA-10 / MCA-01 Ue 690V Ith 10A MCAH-10 / MCAH-01 Ue 690V Ith 25A , ) Ue 690V Ith 10A Contacts 45 Please enlarge on your new range of ultra-compact contactors , -11 / MRA-22 Ue 690V Ith 10A I am also interested in (please tick) MC-E220 VG-MC/250 MC10-MC40 , LEDs & 7 segment displays OCMOS FET photocouplers PCB Terminal blocks Nature of business , 230VkW 380/400V kW 500V kW 660/690V kW Auxillary contacts Coil AC operated See reverse for


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PDF MC10-S MC14-S MC18-S MC22-S MC24-S MC32-S MC40-S MC50-S MC62-S MC74-S diode 400V 4A isolators 415v star delta plc relay 5a 250v ac 30v dc plc scada and hmi DC MOTOR 12-24v delta hmi Auxillary transformer 2.2KW motor MC40-S-00
Not Available

Abstract:
Text: 30MHz 0,05% Max 5ppm/°C 10ppmMax 500^V Max 2.5pV/°C 50pAMax 40pAMax 1pA/°C 100dB 94dB The LT1102 is the first fast FET input instrumentation am­ plifier offered in the low cost, space , input bias and offset currents, 200/A/ offset volt­ age. Unlike other FET input instrumentation , currents do not double with every 10 °C rise in temperature. Indeed, at 70°C ambient temperature the


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PDF LT1102 30MHz 10ppmMax 50pAMax 40pAMax 100dB LT1102
1998 - BUZ45B

Abstract:
Text: BUZ45B Semiconductor Data Sheet 10A , 500V , 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features · 10A , 500V [ /Title This is an N-Channel enhancement mode , transistors requiring high speed and low gate drive power. ( 10A , · Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V , · High Input Impedance 0.500 Formerly , . FET ) G /Author () S /Keywords (Harris SemiPackaging conducJEDEC TO-204AA tor, NChannel Power


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PDF BUZ45B BUZ45 TA17435. BUZ45B TA17435 BUZ-45B 500V N-Channel MOSFET ID 29A transistor BUZ45
ACK34

Abstract:
Text: ANALOG DEVICES Fast Settling, Wideband, 100mA Output, FET Amplifiers MODELS 50 & 51 FEATURES , are ultra fast, wideband differential FET amplifiers, designed for applications requiring fast , product, slew rate of 500V //JS and output current of ±100mA from dc to 8MHz. Model 51 is also available , €¢ Slew Rate, Noninverting 400V/ps, min * 300V//is, min * Slew Rate, Inverting 500V //is, min • 400V , ±2mV * INPUT BIAS CURRENT Initial., ® +25°C 0, 0-2 nA max * vs. Temperature Double/+ 10 °C vs. Supply


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PDF 100mA 200ns 50J/K) 100ns 100MHz ACK34 FET differential amplifier circuit 51a Potentiometer AD 51A weigh amplifier
2003 - motor driver full bridge 10A 100V

Abstract:
Text: T E C H N O L O G Y (800) 546-APEX (800) 546-2739 PRELIMINARY FEATURES · 10V TO 500V , to 85°C 500V 16V 40A 20A TDB ­0.3V to Vcc +0.3 ­.03V tp 5.35V 300°C 150°C ­65 to 150 , EFFICIANCY, 10A SWITCHING FREQUENCY CURRENT, continuous, BC10 CURRENT, peak, BC10 CURRENT, continuous , Source of the N-rail FET in half bridge 1 Source of the N-rail FET in half bridge 2 Source of the N-rail FET in half bridge 3 Commutation sensor input 1 Commutation sensor input 2 Commutation sensor


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PDF BC10/BC20 546-APEX BC10/BC20U motor driver full bridge 10A 100V 12V 20A brushless motor 12v DC SERVO MOTOR CONTROL circuit DC SERVO MOTOR closed loop pwm speed control motor driver full bridge 10A motor driver full bridge 20A dc motor driver full bridge 10A 120 V dc motor drive circuit y e motor drive corporation PWM H bridge servo motor controller
1999 - PWM DRIVE control 100V 20A

Abstract:
Text: ://WWW.APEXMICROTECH.COM (800) 546-APEX (800) 546-2739 PRELIMINARY FEATURES · 10V TO 500V MOTOR SUPPLY AT 20 A , prodlit@apexmicrotech.com BC10/BC20 BC10 ABSOLUTE MAXIMUM RATINGS SPECIFICATIONS BC20 500V 16V 40A 20A TDB ­0.3V , EFFICIANCY, 10A SWITCHING FREQUENCY CURRENT, continuous, BC10 CURRENT, peak, BC10 CURRENT, continuous, BC20 , the N-rail FET in half bridge 1 Source of the N-rail FET in half bridge 2 Source of the N-rail FET in , current condition. HCMOS 1 enables power FET operation The PWM frequency may be lowered by installing a


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PDF BC10/BC20 546-APEX BC10/BC20U PWM DRIVE control 100V 20A 12V 20A brushless motor BC10 DC SERVO MOTOR closed loop pwm speed control motor driver full bridge 10A 100V PWM H bridge servo motor controller BC20 motor driver full bridge 20A automatic change over circuit diagram of 2 motors motor driver full bridge 10A
2014 - ML-370

Abstract:
Text: Ranges: 0-15, 150, 500V Input Impedance: 2kΩ per Volt Rated Accuracy: ±4% of full scale Ranges: 0-15, 150, 500V Input Impedance: 2kΩ per Volt Rated Accuracy: ±5% of full scale DC Current , +56dB on 500V AC range Battery Test Ranges: 1.5V AA 800-631-1250 • www.nteinc.com Analog , Accuracy: ±4% of full scale DC Current Resistance Ranges: 120µ, 13m, 30m, 300m, 10A Rated , Analog Multimeter FET -43 • Very High Input Impedance • Excellent Trouble Shooting Tool • 5


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PDF AM-10 90-Day ML-10) DM-3010. ML-370 DM-4000A. DM-6510. DM250. ML-375 ML-370 DM-305A 4410M BECKMAN 3020b digital capacitance meter rms225
ltc1680

Abstract:
Text: Single/Dual 3.6mA Per Amp, 500V /µs, 100MHz FET Input LT1122 - Single, 14MHz, 60V/µs, 100% Tested , -1 SMBus Accelerator, SOT-23 LTC1623 Dual, FET Switch Drivers with SMBus Control LTC1710 Dual High Side , Full Supply Range LT1399HV - Triple 300MHz, 500V /µs, ±7.5V Operation Multiplexers LT1203/1205 - 2:1 , LT1363/1364/1365 - Single/Dual/Quad 750V/µs, 70MHz, Excellent DC Performance LT1497 - Dual 500V /µs, 50MHz, Low Distortion, Excellent Video LT1210 - Single 500V /µs, 35MHz, Excellent Large Signal


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PDF LTC1872 OT-23 LTC1874 LTC1876 LTC1922-1 LTC1555L-1 LTC1235 LTC690 LTC691 LTC694 ltc1680 apple laptop battery pinout R5485 ccfl inverter pinout laptop laptop backlight inverter pinout LT1764-3.3 ltc485 lt1073 equivalent ic 5Dx diode LT1170 boost converter 12v dc input 19.5 v
1996 - IRF P CHANNEL MOSFET 200V 20A

Abstract:
Text: 1000V, 4.3A, 3.500 RF1S630SM 200V, 9A, 0.400 0A TO 10A S E M I C O N D U C TO R 3.500 , , P-Channel, 30V, Surface Mount MOSFET CURRENT RATING 1 = 1A, 10 = 10A , 25 = 25A, etc. PACKAGE , (Note) 200V, 0.6A, 1.500 IRFR214 250V, 2.2A 2.000 IRFR321 350V, 3.1A 1.800 0A TO 3.5A 500V 450V 400V BVDSS 10A IRFR421 450V, 2.5A 3.000 IRFR322 400V, 2.6A 2.500 IRFR320 400V, 3.1A 1.800 0A TO 3.5A IRFR420 500V , 2.5A 3.000 IRFR422 500V , 2.2A 4.000 IRFR410 500V , 1.5A


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PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF N CHANNEL MOSFET 10A 1000V IRF P CHANNEL MOSFET IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
2000 - 7720-1A

Abstract:
Text: switching power supply. - Rectifier bridge - Ultrafast platinum output diode - 500V .1 Max. FET (7720-1A , Capacitance Ciss Gate Resistor RG Junction Temperature Thermal Resistance FET Tj Rthjc , Voltage D5 Tj Rthjc Conditions1 VDS = 500V , VGS = 0V 7720-X -1 -2 -3 IDS = 28A, VGS = , = 600V, t = 150°C -1,-2,-3 IF = 1.0A , di/dt = 100A/µs -1,-2,-3 IF = 25A, di/dt = 100A/µs -1,-2


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PDF 720-1A 720-2A 720-3A 720-1A) O-220 O-247 7720-1A BI 7720 420L40 7720-2A 7720-3A
1997 - 420L40

Abstract:
Text: output diode - 500V .1 FET (-3) · Provides optimum use of available line current · Allows power supply to , ELECTRICAL CHARACTERISTICS FET Parameter Drain Leakage Current Symbol IDSS On-State Voltage , VR = 600V -1,-2,-3 VR = 600V, t = 150°C -1,-2,-3 IF = 1.0A , di/dt = 100A/µs -1,-2,-3 IF = 25A, di/dt = 100A/µs -1,-2,-3 -1,-2,-3 -1,-2 -3 I = 1mA t = 80 t = 90 t = 100 t = 110 Conditions1 VDS = 500V


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PDF 720-1A 720-2A 720-3A 420L40 BI 7720 BI 7720 1A
2001 - SG3524 application notes speed control

Abstract:
Text: 0 TO 325V 10A D8 Q2 R D2 D9 Q4 D10 D4 R R Q6 D6 SWITCHES ON" (1, 4, 5), (1, 3, 6), (2, 3, 6), (2, 3, 5), (2, 4, 5) FIGURE 10A . COMPONENT SELECTION IS IMPORTANT. THE IGT SELECTED CIRCUIT HANDLES 10A , 500V AT 150 oC. THE ANTIPARALLEL DIODES HAVE A SIMILAR CURRENT , 10A , 500V for a clamped inductive load at a junction temperature of 150oC. A 400V IGT could also do , 'S GATE D7 L1 D1 C1 R Q1 D3 R Q3 D5 R Q5 325V 10A INDUCTION MOTOR D2


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1999 - ne555 vco

Abstract:
Text: 0 TO 325V 10A D8 Q2 R D2 D9 Q4 D10 D4 R R Q6 D6 SWITCHES ON" (1, 4, 5), (1, 3, 6), (2, 3, 6), (2, 3, 5), (2, 4, 5) FIGURE 10A . COMPONENT SELECTION IS IMPORTANT. THE IGT SELECTED CIRCUIT HANDLES 10A , 500V AT 150oC. THE ANTIPARALLEL DIODES HAVE A SIMILAR CURRENT , . This device has a reverse-breakdown SOA (RBSOA) of 10A , 500V for a clamped inductive load at a , R Q1 D3 R Q3 D5 R Q5 325V 10A INDUCTION MOTOR D2 R Q2 D4 R Q4


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2002 - SG3524 application notes speed control

Abstract:
Text: D3 D5 R R TO LOAD 0 TO 325V 10A D8 Q2 R D2 D9 Q4 D10 D4 R R Q6 D6 SWITCHES ON" (1, 4, 5), (1, 3, 6), (2, 3, 6), (2, 3, 5), (2, 4, 5) FIGURE 10A . COMPONENT SELECTION IS IMPORTANT. THE IGT SELECTED CIRCUIT HANDLES 10A , 500V AT 150oC. THE ANTIPARALLEL , device has a reverse-breakdown SOA (RBSOA) of 10A , 500V for a clamped inductive load at a junction , Q5 325V 10A INDUCTION MOTOR D2 R Q2 D4 R Q4 Q6 R D6 NOTES: Q1 - Q6 =


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PDF
Not Available

Abstract:
Text: LIST C1 0.47|jF/250VAC X2 Class Polyester Q1 IRF830 4.5A/ 500V 1.5Q Power FET C2 68nF , Limits Starting Current Less Than 1 mA High-Current FET Drive Output Under-Voltage Lockout , ). 30.0mA OUT Current, P e a k. ± 1.0A , Polyester or Ceramic R2 0.2Q, V2 W 2A/ 500V Bridge Rectifier (Collmer KBPC106 or Powertex MB11A02V60) R3 13.3kQ, 1/ 2 W D2 100mA/50V Switching Diode (1N4148) D3 2A/ 500V 250ns


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PDF UC1852 UC2852 UC3852 UC1852 180pF/16V 680nH RL3792 82uF/450V 150kfl, 1nF/16V
2SK2714

Abstract:
Text: Transistors Switching ( 500V , 10A ) 2SK2714 ·F e a tu re s 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at V gss = ±30V. 5) Easily , ) 2SK2714 Bulk - 500 O ram n 139 M OS FET (1) Gate (2) Drain (3) Source I Transistors , Idr= 10A , V a s = 0 V dl/dt=100A//iS ·E le ctrica l characteristic curves 50r 2 5 10 , Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage I M OS FET 0 0.5 1.0 1.5


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PDF 2SK2714 O-220FN 2SK2714
Supplyframe Tracking Pixel