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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
2N2222A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
2N2222AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3
2N2222AUA TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2N2222AUB TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2N2222 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
2N2222AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4

fet 2n2222 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - transorb

Abstract:
Text: external capacitor to about 40 volts, and then connect it to the internal power line through a FET switch , examples are shown on Figure 11. One of these uses an N channel FET in the return line, and the other , normal operation the FET is in full enhancement with its Rds in series with the power line. When the , the transient appearing across the series FET . The FET current during the transient is the load , across the FET as well as the total energy absorbed during the transient need to be considered in the


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PDF MIL-STD-461C, transorb 77930-a7 fet 2n2222 77438-A7 77040-A7 transorb applications notes CROSS REF FET crane switch transorb diode DO-160C
1999 - TRANSISTOR 2N2222

Abstract:
Text: : · Use of an X80070 hotswap controller This device provides a controlled delay on the main FET turn on, changeable FET gate currents to control the FET slew rate, and a PWRGD output that turns on the DC-DC converter only after the main FET is on. · Input protection To conform to the ATCA specification , minimize the surge current through the main power FET . · Discharge circuits This block will likely be , converter provides full power down to 35V, it is not desired to turn off the FET above this threshold. As


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PDF X80070 AN180 TRANSISTOR 2N2222 2200uf capacitor NPN transistor 2n2222 IRFS23N15D IPMI Fairchild F8 DC-DC Converters 0.25W dc-dc converter 48v to 24v 40a X80000
12A 250v LITTLEFUSE

Abstract:
Text: This device provides a controlled delay on the main FET turn on, changeable FET gate currents to control the FET slew rate, and a PWRGD output that turns on the DC-DC converter only after the main FET , main power FET . · Discharge circuits This block will likely be requires in all systems for safety , desired to turn off the FET above this threshold. As such, the BATT-ON pin is tied HIGH in this , capacitor when the input voltage goes from 48 to 72V. Without correction, the X80070 will turn off the FET


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PDF X80070 X80070Q20 TLP124B ADUM1401 12A 250v LITTLEFUSE irfs23n15d NPN transistor 2n2222 SSM1-402E-10T 48V 2w zener diode D6 DIODE 2N2222 transistor 2N2222 NPN Transistor features X80000 2200uf capacitor
CP643

Abstract:
Text:  TMF 18 \ TECHNICAL MEMO FET Broadband Amplifier This RF broadband amplifier uses a constant current source in place of a source biasing resistor. The current source automatically sets the operating point regardless of Iqss or vp- The alternatives are selection of the source resistor or use of a high negative supply voltage O Vp) and a high source resistor value. The 2N2222 may be replaced by any NPN transistor with a reasonable 0 at 50mA. The base voltage divider includes a diode to temperature


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PDF 2N2222 CP640 CP643 CP643 RF Transistor 2n2222 2N2222 rf 2n2222 r.f. amplifier TMF18 npn 2n2222 transistor NPN transistor 2n2222 "NPN Transistor"
1996 - 20uH

Abstract:
Text: even lower dropout and/or to reduce heat on the board, the input diode can be replaced with a FET (see Figure 2). It is straightforward to connect a P-channel FET across the input diode and connect its gate to the battery so that the FET commutates off when the input goes low. The problem is that the gate must be pumped low so that the FET is fully turned on even when the input is only a volt or two above , battery back through the charger into the FET , the FET should turn off instantly when the input is dead


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PDF LT1511 LT1511 DN144 1-800-4-LINEAR. 20uH Si4435DY 20uH inductor VN2222 battery charger LT1511 fet 2n2222 marcon capacitor MBR0540T MBRD340
2N2222 NPN Transistor features

Abstract:
Text: order of milliohms (m) Since the ON resistor of the MOS FET might affect 0 VGS VT n , si2302ds (V) 4.8 NPN 2N2222 Figure 6 shows the output characteristics of an N- 4.6 , figures tell us the general purpose of transistors 90% MOS si2302ds (e.g. 2N2222 , 2N3904 , 2SD1803 60% VBE(SAT) when larger switching current implemented. 50% 40% NPN 2N2222 30% 20


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PDF AN00-SR05EN AIC1639 AIC1639 AIC1638 AIC1638 100KHz 2N2222 NPN Transistor features transistor 4F mosfet driver with npn transistor NPN 2n3904 2N3904 2N2222 AN00-SR05EN fet 2n2222 2N2222 circuit 2n2222 npn transistor general purpose
mosfet driver with npn transistor

Abstract:
Text: - Figure 6 order of milliohms (mW) Since the ON resistor of the MOS FET might affect the output , ; (2) 4.8 (V) MOS si2302ds NPN 2N2222 pinch-off or saturation region , whereVDSVGS-VT , si2302ds 80% 70% transistors (e.g. 2N2222 , 2N3904.etc) are not recommended due to its low current , implemented. 40% NPN 2N2222 30% 20% NPN 2N3904 10% 0% 0 100 200 300 400 500


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PDF AN00-006 AIC1639 AIC1639 AIC1638 AIC1638 100KHz mosfet driver with npn transistor 2N2222 NPN Transistor features npn 2n2222 2N3904 NPN 2n3904 2N2222 2n3904 2n2222 npn bipolar junction 2N2222 fet 2n2222
2N3904

Abstract:
Text: milliohms (mW) Since the ON resistor of the MOS FET might affect the output ability as well as the , ) MOS si2302ds NPN 2N2222 pinch-off or saturation region , whereVDSVGS-VT ; 4.6 (3) linear , . 2N2222 , 2N3904.etc) are not recommended due to its low current capacity, low NPN 2SD1803 60% DC gain and high VBE(SAT) when larger switching 50% current implemented. 40% NPN 2N2222


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PDF AN00-SR05EN AIC1639 AIC1639 AIC1638 AIC1638 100KHz 2N3904 NPN 2n3904 npn 2n2222 2N2222 2SD1803 2N2222A AN00-SR05EN mosfet driver with npn transistor Transistor 2SD1803
2N2222 NPN Transistor features

Abstract:
Text: , typicallyon the 0 VGS VT n- Since the ON resistor of the MOS FET might affect the output ability , 2N2222 pinch-off or saturation region , whereVDSVGS-VT ; 4.6 (3) linear region , where VDSVGS-VT , The figures tell us the general purpose of 90% MOS si2302ds transistors (e.g. 2N2222 , 2N3904 , % DC gain and high VBE(SAT) when larger switching 50% current implemented. 40% NPN 2N2222


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PDF AN013 AIC1639 AIC1639 AIC1638 AIC1638 100KHz 2N2222 NPN Transistor features 2N2222 2n3904 mosfet driver with npn transistor NPN 2n3904 NPN SWITCHING transistor 2N2222 2N3904 AN013 fet 2n2222 2N2222 npn 2n2222
2004 - 15-V

Abstract:
Text: EPI FET Transistors BAL/STRB BALANCE 450 450 20 2 1 22 VCC+ 2.4 k 750 , BAL/STRB VCC+ TTL Strobe 2N2222 20 k 1 k Output Input NOTE: Do not connect strobe , Input 22 k BALANCE BAL/STRB 0.1 µF Input TTL Strobe 2N2222 Sample 1 k Typical , 10 k 2N2222 VCC- = -10 V Figure 20. Low-Voltage Adjustable Reference Supply 12 POST , 3.9 k 30 k 1 k 2N3708 1 k 1N914 Output + 2N2222 1N914 Input From TTL


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PDF LM211Q1 SLCS143 AEC-Q100 LM211 15-V 2N2222 AEC-Q100 LM211QDRQ1 Q100 s parameters of 2N2222
2002 - 1N2175

Abstract:
Text: EPI FET Transistors 20 2 1 22 VCC+ 2.4 k 2.4 k 750 70 1.2 k 600 450 450 IN+ 1.2 k 4 k , shorted together. Figure 12. Offset Balancing BAL/STRB TTL Strobe 2N2222 1 k Figure 13 , Network VCC+ Analog Input (see Note A) 0.1 µF BALANCE BAL/STRB 2N2222 Sample 1 k TTL Strobe , (continued) VCC+ 3.9 k 10 k 2N3708 Output 500 + 1 k 2N2222 1.5 µF Figure 20. Low-Voltage , k 2N3708 1N914 Output + 1N914 1.5 µF 510 2N2222 Input From TTL 2N2222 2.7 k 2N2222


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PDF LM211-EP SLCS140A 1N2175
2002 - 1N2175

Abstract:
Text: EPI FET Transistors 20 2 1 22 VCC+ 2.4 k 2.4 k 750 70 1.2 k 600 450 450 IN+ 1.2 k 4 k , shorted together. Figure 12. Offset Balancing BAL/STRB TTL Strobe 2N2222 1 k Figure 13 , Network VCC+ Analog Input (see Note A) 0.1 µF BALANCE BAL/STRB 2N2222 Sample 1 k TTL Strobe , (continued) VCC+ 3.9 k 10 k 2N3708 Output 500 + 1 k 2N2222 1.5 µF Figure 20. Low-Voltage , k 2N3708 1N914 Output + 1N914 1.5 µF 510 2N2222 Input From TTL 2N2222 2.7 k 2N2222


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PDF LM211-EP SLCS140A 1N2175 100 khz crystal s parameters of 2N2222
tuning capacitor

Abstract:
Text: connection. Pin 1: Gate bias for stage one FET . A 100 stabilizing resistor and 1000 pF low-frequency , 10: Ground. A short ground connection is recommended. Pin 11: Drain bias for stage two FET . A 1.3 , . Pin 5: Drain bias for stage one FET . A 3 pF tuning/bypassing capacitor and a 0.022 µF and 6.8 µF low , connection is recommended. Pin 7: Gate bias for stage two FET . An 8.2 pF high frequency tuning and , Out GND RF Out/VDS2 VGS2 GND GND GND Q1 2N2222 R2 1 k R3 240 C3 0.1 µF


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PDF AP119-89 TK119 2N2222 AM100-73 1/99A tuning capacitor 2N2222 rf 2N2222 AM100-73
2003 - of 1000 microfarad capacitor

Abstract:
Text: ISO 9001 CERTIFIED BY DSCC FET INPUT HIGH SPEED VOLTAGE FOLLOWER/BUFFER AMPLIFIER M.S.KENNEDY , /EL2005 Replacement Low Input Offset - 2mV Low Input Offset Drift - 25µV/°C FET Input, Low Input Current - , bandwidth voltage follower/buffer amplifier that is pin compatible with all other 0033 designs. The FET , current remains constant with input voltage. The FET input also makes the MSK 0033 very accurate since it , base-emitter voltage drop of the 2N2222 's and 2N2907's in the current limit scheme, the current limit value


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PDF LH0033/EL2005 140MHz 100mA MIL-PRF-38534 performance2/03 MSK0033 MSK0033B 8001401ZX of 1000 microfarad capacitor datasheet of 1000 microfarad capacitor
2002 - 1N2175

Abstract:
Text: IN+ + COL OUT IN­ ­ EMIT OUT schematic Component Count Resistors Diodes EPI FET , -kHz Free-Running Multivibrator VCC+ 20 k BAL/STRB Output Input TTL Strobe 2N2222 1 k VCC , 22 k BALANCE BAL/STRB 0.1 µF Input TTL Strobe 2N2222 Sample 1 k Typical input , 2N2222 VCC­ = ­10 V Figure 20. Low-Voltage Adjustable Reference Supply 12 POST OFFICE BOX , k 1 k 2N3708 1 k 1N914 Output + 2N2222 1N914 Input From TTL 2N2222


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PDF LM211EP SLCS140 LM211 1N2175 15-V 1N914 2N2222 2N3708 LM211 LM2110 LM211QDREP TL081
1995 - Not Available

Abstract:
Text: BALANCE Resistors Diodes EPI FET Transistors 20 2 1 22 VCC+ 2.4 k 2.4 k 750 70 1.2 k 600 450 450 , Balancing BAL/STRB VCC+ TTL Strobe 2N2222 1 k Input 20 k Output NOTE: Do not connect strobe pin , 2004 APPLICATION INFORMATION From D/A Network VCC+ Output 22 k Analog Input BALANCE 0.1 µF 2N2222 , Simultaneously VCC+ 3.9 k 10 k 2N3708 Output BALANCE Input + 1 k 2N2222 1.5 µF 500 3 k VCC+ = 5 V 3 k , VCC+ = 5 V 3.9 k 30 k 1 k 1 k 2N3708 1N914 Output + 1N914 1.5 µF 2N2222 510 2N2222 Input From


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PDF LM211Q1 SLCS143 AEC-Q100 LM211
AP112

Abstract:
Text: stage one FET . A 0.022 µF tuning and bypassing capacitor followed by a 100 stabilizing resistor and , : Ground. A short ground connection is recommended. Pin 2: Gate bias for stage two FET . A 15 pF high , . Pin 3: No connect. Pin 11: No connect. Pin 4: Drain bias for stage one FET . A 22 pF tuning and , connection is recommended. Pin 15: Drain bias for stage two FET . 3.6 pF and 470 pF tuning capacitors, a , .050/.012 + 100 R1 36 k C5 .022 µF R2 1 k Q1 2N2222 R3 240 C3 0.1 µF C20


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PDF AP112-79 TK112 2N2222 AM100-73 11/98A AP112 Q1 2N2222 2N2222 rf TK112 BM 2N2222 AM100-73 TK112 tuning capacitors
2001 - Melcor peltier

Abstract:
Text: , and FET drivers, as well as features such as undervoltage lockout (UVLO) and pulse-by-pulse current , . MOSFETs Q1­Q4 form the bridge, while BJTs Q5­Q8 act as high-side FET drivers, since outputs AOUT1 and , alternative is to use MOSFETs with a lower RDS(on). +12 V 12 Vdc + AT 2.5 A MAX ­ R2 1 k Q7 2N2222 Q5 2N2222 Q2 IRF9Z34 Q6 2N2907 Q1 IRF9Z34 R1 1 k 12 Vdc FAN C1 2200 µF 16 V


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PDF SLUA202A UC3638 Melcor peltier pwm control of tec peltier melcor PWM Regulator peltier TEC H bridge UC3638 12v irfz44 melcor 8-127-06L
2001 - Melcor peltier

Abstract:
Text: , and FET drivers, as well as features such as undervoltage lockout (UVLO) and pulse-by-pulse current , . MOSFETs Q1-Q4 form the bridge, while BJTs Q5-Q8 act as high-side FET drivers, since outputs AOUT1 and , alternative is to use MOSFETs with a lower RDS(on). +12 V 12 Vdc + AT 2.5 A MAX - R2 1 k Q7 2N2222 Q5 2N2222 Q2 IRF9Z34 Q6 2N2907 Q1 IRF9Z34 R1 1 k 12 Vdc FAN C1 2200 µF 16 V


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PDF SLUA202A UC3638 UC3638 Melcor peltier peltier melcor pwm control of tec 8-127-06L TEC H bridge IN5817 air conditioning Melcor 2n2222 ti
2006 - dh0370r

Abstract:
Text: Rugged 700V Sense FET Consumes only 0.8W at 230 VAC & 0.5W load with Description The FSDH0170RNB , rugged 700V Sense FET . It is specifically designed for high performance offline Switch Mode Power , View) Pin Definitions Pin Number 1 2 Pin Name GND Vcc Pin Function Description Sense FET , overload conditions. This pin adjusts the peak current limit of the Sense FET . The 0.9mA feedback current , (TA = 25°C unless otherwise specified) Parameter Sense FET Section11 Zero-Gate-Voltage Drain


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PDF FSDH0170RNB/FSDH0270RNB/FSDH0370RNB dh0370r DH0270R SMD transistor Marking 13w FAIRCHILD 1n4007 smd diode samwha capacitor U1A fusible ZR1 10A TRANSISTOR SMD 13W samwha ELECTROLYTIC capacitor RD series TRANSISTOR SMD MARKING CODE 13w SAMYOUNG rd Series
2002 - 1N2175

Abstract:
Text: Count Resistors Diodes EPI FET Transistors BAL/STRB BALANCE 450 450 20 2 1 22 VCC , . Figure 12. Offset Balancing BAL/STRB TTL Strobe 2N2222 1 k Figure 13. Strobing 10 , Driver From D/A Network VCC+ Analog Input (see Note A) BALANCE BAL/STRB 0.1 µF 2N2222 , 2N2222 Figure 20. Low-Voltage Adjustable Reference Supply VCC+ = 5 V 3 k 3 k BAL/ STRB , MOS Logic VCC+ = 5 V 3.9 k 30 k (see Note A) 2N3708 1 k 1 k 1N914 Output + 2N2222


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PDF LM211-EP SLCS140A 1N2175 15-V LM211MDREP LM211M LM211-EP LM211 DIFFERENTIAL COMPARATOR 2N3708 2N2222 LM211QDREP
2004 - Not Available

Abstract:
Text: BALANCE Resistors Diodes EPI FET Transistors 20 2 1 22 VCC+ 2.4 k 2.4 k 750 70 1.2 k 600 450 450 , Balancing BAL/STRB VCC+ TTL Strobe 2N2222 1 k Input 20 k Output NOTE: Do not connect strobe pin , 2004 APPLICATION INFORMATION From D/A Network VCC+ Output 22 k Analog Input BALANCE 0.1 µF 2N2222 , Simultaneously VCC+ 3.9 k 10 k 2N3708 Output BALANCE Input + 1 k 2N2222 1.5 µF 500 3 k VCC+ = 5 V 3 k , VCC+ = 5 V 3.9 k 30 k 1 k 1 k 2N3708 1N914 Output + 1N914 1.5 µF 2N2222 510 2N2222 Input From


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PDF LM211Q1 SLCS143 AEC-Q100 LM211
1973 - LM311

Abstract:
Text: Count BAL/STRB BALANCE Resistors Diodes EPI FET Transistors 20 2 1 22 VCC+ 2.4 k 2.4 k 750 70 1.2 k , Figure 12. Offset Balancing VCC+ BAL/STRB Input TTL Strobe 2N2222 1 k VCC­ 20 k Output Figure , Network VCC+ Output 22 k Analog Input BALANCE 0.1 µF 2N2222 Sample 1 k Typical input current is 50 pA , Input + 1 k 2N2222 1.5 µF 500 3 k VCC+ = 5 V 3 k BAL/ STRB Output to MOS 10 k VCC­ = ­10 V , 5 V 3.9 k 30 k 1 k 1 k 2N3708 1N914 Output + 1N914 1.5 µF 510 2N2222 Input From TTL 2N2222


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PDF LM111, LM211, LM311 SLCS007E LM111 LM211 LM311 LM311 ti LM311PS
2002 - Not Available

Abstract:
Text: IN− − EMIT OUT SCHEMATIC Component Count Resistors Diodes EPI FET Transistors BAL , should be shorted together. Figure 12. Offset Balancing BAL/STRB TTL Strobe 2N2222 1 kâ , Driver From D/A Network VCC+ Analog Input (see Note A) BALANCE BAL/STRB 0.1 µF 2N2222 , + 1 kΩ 1.5 µF 2N2222 Figure 20. Low-Voltage Adjustable Reference Supply VCC+ = 5 V 3 , 1 kΩ 1 kΩ 1N914 Output + 2N2222 1N914 Input From TTL 2N2222 1.5 µF


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PDF LM211-EP SLCS140A
2002 - 2n2222 ti

Abstract:
Text: EPI FET Transistors 20 2 1 22 VCC+ 2.4 k 2.4 k 750 70 1.2 k 600 450 450 IN+ 1.2 k 4 k , shorted together. Figure 12. Offset Balancing BAL/STRB TTL Strobe 2N2222 1 k Figure 13 , Network VCC+ Analog Input (see Note A) 0.1 µF BALANCE BAL/STRB 2N2222 Sample 1 k TTL Strobe , (continued) VCC+ 3.9 k 10 k 2N3708 Output 500 + 1 k 2N2222 1.5 µF Figure 20. Low-Voltage , k 2N3708 1N914 Output + 1N914 1.5 µF 510 2N2222 Input From TTL 2N2222 2.7 k 2N2222


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PDF LM211-EP SLCS140A 2n2222 ti
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