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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

f36 transistor Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: ■y/ } rtf, wrr=r< £7 Â whmmmmmv Mm PA2 Series W/TIP-29C (TO-220) TRANSISTOR i , DESCRIPTION OF CURVES A. N.C. Horiz.Device Only Mounted to G-10. B. N.C. Horlz. & Vert. With Dissipator. C. 200 FPM w/Diss. D. 500 FPM w/Diss. E. 1000 FPM w/Dlss. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 POWER , -29C (TO-220) TRANSISTOR r B 1 / 1 / t /c D f / / / A E , -220 3.0 PB1-3U PB1-3CB PB1-3B PB1-3 F-36 or MS9 3.0 Note: See page I* for other finishes. 2-5


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PDF /TIP-29C O-220) T0-126, T0-220 T0-127 O-220
PB13B

Abstract: pb1l
Text: PA2 Series PA2.1U w/TIP-29C (TO-220) TRANSISTOR 'I/AI:BI;-';'-t,.£Q Gl10 ~ 100 ~ 71 90 w ~ 0 1 / D. 500 FPM w/Diss. 7t7r7I E. 1000 FPM w/Diss. 2 3 4 5 6 7 8 9 10111213 Ordering Information ~ IERC PART NO. 31 .L Unpfated (7.87) r 1415 POWER DISSIPATED (WATTS) Resistance Case to Sink is 0.9.1.1 °C/W w , (1082) Undrllled One 1O-126, 1O-127 or TO-220 One or two 1O-126, 1O-127 or 1O-220 F-36 or MS9


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PDF w/TIP-29C O-220) 1O-126, 1O-127 O-220 1O-127 1O-220 PB13B pb1l
tr. c945

Abstract: cross reference c945 640X350 ic 3842 datasheet sg 3842 a WT8046N24P1 800X600 25KHZ 640X480 640x480 50hz
Text: .5K F36 .2K 8 17 640x480 F36 .2K 8 17 640x480 F33K 9 16 640x400 F33K , (37.5K) F36 .2K 7 18 640x400(31.5K) F43.5K 7 18 800x600(35.2K) F33K 8 17 640x480 (37.5K/72Hz) F36 .2K 8 17 640x480 NC 9 16 640x350 (31.5K/37.5K) F33K , ) F36 .2K 8 17 640x480 640x400 F33K 9 16 640x400 640x350 Vss 10 15 , ) V_out 6 19 800x600(37.5K) F43.5K 7 18 800x600(35.2K) F36 .2K 8 17


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PDF WT8046 WT8046 8514/A 800x600 640x480 QV128 640x400 5K/37 tr. c945 cross reference c945 640X350 ic 3842 datasheet sg 3842 a WT8046N24P1 25KHZ 640x480 50hz
ibm 8514

Abstract: 329kHz 640X350 WT8045 WT8045N24P1 25KHZ 800x600 pc vga monitor circuit diagram wt8045n24p3 31kHz
Text: ) V_out 7 18 800x600(35.2K) F43.5K F36 .2K 8 17 640x480 F36 .2K 8 17 , 6 19 640x480(31.5K) V_out 6 19 800x600(37.5K) F36 .2K 7 18 640x400(31.5K) F43.5K 7 18 800x600(35.2K) F33K 8 17 640x480 (37.5K/72Hz) F36 .2K 8 , ) V_out 6 19 800x600(37.5K) F43.5K 7 18 800x600(35.2K) F36 .2K 8 17 , .5K 7 18 800x600(35.2K) F36 .2K 8 17 640x480 F33K 9 16 10 15 Mute


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PDF WT8045 WT8045 8514/A 800x600 640x480 QV128 640x400 5K/37 ibm 8514 329kHz 640X350 WT8045N24P1 25KHZ pc vga monitor circuit diagram wt8045n24p3 31kHz
FS10 TM

Abstract: F28-700 Transistor FS10 f28-200 F10-110 f10360 TRANSFORMER CT 2A TRANSFORMER CT 1A FS16-400 F12-500
Text: -070 F20-055 F24-045 F28-040 F36 -030 F48-023 F56-020 F120-010 FS10-110 FS12-090 FS16-070 FS20 , -120 F24-100 F28-85 F36 -65 F48-050 F56-045 F120-020 FS10-250 FS12-200 FS16-150 FS20-120 FS24 , -200 F36 -170 F48-125 F56-110 F120-050 FS10-600 FS12-500 FS16-400 FS20-300 FS24-250 FS28 , -420 F36 -350 F48-250 F56-220 F120-100 FS10-1200 FS12-1000 FS16-800 FS20-600 FS24-500 FS28 , -700 F36 -550 F48-400 F56-350 F120-160 FS10-2000 FS12-1600 FS16-1250 FS20-1000 FS24-800 FS28


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PDF E53148 Primar/16 FS10 TM F28-700 Transistor FS10 f28-200 F10-110 f10360 TRANSFORMER CT 2A TRANSFORMER CT 1A FS16-400 F12-500
2004 - MGFC45V3642A

Abstract: No abstract text available
Text: Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz High power gain GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz High power added efficiency P.A.E. = 36 % (TYP.) @ f=3.6 - , - 0.8 1 deg.C/W ID Rth(ch-c) *3 Thermal resistance VDS=10V, ID(RF off)=8A, f=3.6 - 4.2GHz delta Vf method *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level, f=3.6 ,3.9


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PDF MGFC45V3642A MGFC45V3642A -45dBc /25deg June/2004
f103600

Abstract: f28-200 F48-023 F24-045 FS10-110 F20-120 F20-055 F16-070 F12-090 TRANSFORMER CT 2A
Text: -045 24.0V CT @ 0.045A F28-040 FS28-040 1.1 28.0V CT @ 0.04A F36 -030 FS36-030 36.0V CT @ 0.03A F48 , 28.0V CT @ 0.085A F36 -65 FS36-65 36.0V CT @ 0.065A F48-050 FS48-050 48.0V CT @ 0.05A F56 , 0.3A F24-250 FS24-250 24.0V CT @ 0.25A F28-200 FS28-200 6 28.0V CT @ 0.2A F36 -170 FS36 , 0.5A F28-420 FS28-420 12 28.0V CT @ 0.42A F36 -350 FS36-350 36.0V CT @ 0.35A F48-250 FS48 , CT @ 0.7A F36 -550 FS36-550 36.0V CT @ 0.55A F48-400 FS48-400 48.0V CT @ 0.4A F56-350 FS56


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PDF 115v/230v 50/60Hz. F10-110 FS10-110 F12-090 FS12-090 F16-070 FS16-0 E53148 f103600 f28-200 F48-023 F24-045 FS10-110 F20-120 F20-055 F16-070 F12-090 TRANSFORMER CT 2A
1999 - GAAS FET AMPLIFIER f 10Mhz to 2 GHz

Abstract: MGFC45V3642A
Text: . FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz High power gain GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz High power added efficiency P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz 4 . 7 1 2 . 0 (1) -R1.2 / + (2) 0 . 8 N , P1dB ID Typ. VDS=10V, ID(RF off)=8A, f=3.6 - 4.2GHz 3rd order IM distortion Thermal resistance delta Vf method A *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level, f=3.6 ,3.9


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PDF MGFC45V3642A MGFC45V3642A GAAS FET AMPLIFIER f 10Mhz to 2 GHz
2003 - MGFC45V3642A

Abstract: No abstract text available
Text: Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz High power gain GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz High power added efficiency P.A.E. = 36 % (TYP.) @ f=3.6 - , - 0.8 1 deg.C/W ID Rth(ch-c) *3 Thermal resistance VDS=10V, ID(RF off)=8A, f=3.6 - 4.2GHz delta Vf method *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level, f=3.6 ,3.9


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PDF MGFC45V3642A MGFC45V3642A -45dBc 25deg
2011 - Not Available

Abstract: No abstract text available
Text: matched to 50(ohm) system  High output power P1dB=32W (TYP.) @ f=3.6 – 4.2GHz  High power gain GLP=11.0dB (TYP.) @ f=3.6 – 4.2GHz  High power added efficiency P.A.E.=36% (TYP.) @ f=3.6 â , 45 - dBm GLP Linear Power Gain f=3.6 – 4.2GHz 10 11 - dB ID Drain , C/W delta Vf method Typ. *2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level , f=3.6


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PDF MGFC45V3642A MGFC45V3642A -45dBc
F24-045

Abstract: No abstract text available
Text: -055 F24-045 F28-040 F36 -030 F48-023 F56-020 F120-010 @ 0.11A @ 0.09A @ 0.07A @ 0.055A @ 0.045A , -100 F28-85 F36 -65 F48-050 F56-045 F120-020 FS10-250 FS12-200 FS16-150 FS20-120 FS24-100 FS28 , -500 F28-420 F36 -350 F48-250 F56-220 F120-100 FS10-1200 FS12-1000 FS16-800 FS20-600 FS24 , -800 F28-700 F36 -550 F48-400 F56-350 F120-160 D 10.0V CT 12.6V CT 16.0V CT 20.0V CT 24.0V CT , -200 F36 -170 F48-125 F56-110 F120-050 B FS10-110 FS12-090 FS16-070 FS20-055 FS24-045 FS28


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PDF
2004 - Not Available

Abstract: No abstract text available
Text: to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz High power gain GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz High power added efficiency P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz Low , , ID = 160mA Min. -2 44 VDS=10V, ID(RF off)=8A, f=3.6 - 4.2GHz 10 -42 delta Vf method Limits Typ. 24 8 , =34.5dBm Single Carrier Level, f=3.6 ,3.9,4.2GHz,delta f=10MHz *3 : Channel-case MITSUBISHI ELECTRIC June/2004


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PDF MGFC45V3642A MGFC45V3642A -45dBc 25deg June/2004
2011 - Not Available

Abstract: No abstract text available
Text: matched to 50(ohm) system  High output power P1dB=24W (TYP.) @ f=3.6 – 4.2GHz  High power gain GLP=11.0dB (TYP.) @ f=3.6 – 4.2GHz  High power added efficiency P.A.E.=35% (TYP.) @ f=3.6 â , )=6.4A 43 44 - dBm GLP Linear Power Gain f=3.6 – 4.2GHz 10 11 - dB


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PDF MGFC44V3642 MGFC44V3642 -42dBc
2011 - Not Available

Abstract: No abstract text available
Text: 50(ohm) system High output power P1dB=32W (TYP.) @ f=3.6 ­ 4.2GHz High power gain GLP=11.0dB (TYP.) @ f=3.6 ­ 4.2GHz High power added efficiency P.A.E.=36% (TYP.) @ f=3.6 ­ 4.2GHz Low distortion [item -51 , =160mA VDS=10V,ID(RF off)=8A f=3.6 ­ 4.2GHz -2 44 10 -42 delta Vf method - Limits Typ. 24 8 45 11 8 36 , Level , f=3.6 ,3.9,4.2GHz,delta f=10MHz *3 :Channel-case Publication Date : Apr., 2011 1 2.4 +/- 0.2


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PDF MGFC45V3642A MGFC45V3642A -45dBc
F3502

Abstract: 1414C
Text: max. B f3.6 A Recommended PWB piercing plan (Pitch tolerance: ±0.1) View from mounting , max. f3.6 A 3.5 6.5 L ± 0.2 3.4 @6.0±0.3 5-f1.0 + 0.1 0 4.1 +0.1 0 , scale) No. 3 Japan EVQPF 0.5 max. 3.5 4.0 7.1 f3.6 1.0 0.3 7.5 6.2 , 0 B Adhesive tape 18.0 f3.6 +0.8 5.0-0.2 Adhesive tape shall not extend


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PDF
2011 - Not Available

Abstract: No abstract text available
Text: .2 FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB=14W (TYP.) @ f=3.6 ­ 4.2GHz High power gain GLP=12.5dB (TYP.) @ f=3.6 ­ 4.2GHz High power added efficiency P.A.E.=40% (TYP.) @ f=3.6 ­ 4.2GHz Low distortion [item -51] IM3=-45dBc (TYP.) @Po=30dBm S.C.L 17.4+/-0.3 8.0 , =3V,ID=3.0A VDS=3V,ID=30mA VDS=10V,ID(RF off)=3.4A f=3.6 ­ 4.2GHz 40 11 -42 delta Vf method - Limits


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PDF MGFC41V3642 MGFC41V3642 -45dBc 30dBm
2011 - Not Available

Abstract: No abstract text available
Text: ‚· High output power P1dB=14W (TYP.) @ f=3.6 – 4.2GHz  High power gain GLP=12.5dB (TYP.) @ f=3.6 – 4.2GHz  High power added efficiency P.A.E.=40% (TYP.) @ f=3.6 – 4.2GHz  Low distortion [item , Power Gain f=3.6 – 4.2GHz 11 12.5 - dB ID Drain current - 3.3 - A


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PDF MGFC41V3642 MGFC41V3642 50ohm
2011 - Not Available

Abstract: No abstract text available
Text: 50(ohm) system High output power P1dB=24W (TYP.) @ f=3.6 ­ 4.2GHz High power gain GLP=11.0dB (TYP.) @ f=3.6 ­ 4.2GHz High power added efficiency P.A.E.=35% (TYP.) @ f=3.6 ­ 4.2GHz Low distortion [item -51 , =10V,ID(RF off)=6.4A f=3.6 ­ 4.2GHz -2 43 10 -42 delta Vf method - Limits Typ. 18 6.5 44 11 35 -45 -


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PDF MGFC44V3642 MGFC44V3642 -42dBc
Not Available

Abstract: No abstract text available
Text: matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz High power gain GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz High power added efficiency P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz , delta V f m ethod A *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level, f=3.6 ,3.9,4.2GHz


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PDF MGFC45V3642A -45dBc
2002 - Not Available

Abstract: No abstract text available
Text: HIGH SPEED LOAD/STRAIN METERS AND PROCESS/VOLTMETERS DUAL DIFFERENTIAL INPUTS AVAILABLE DP7600 725 $ Model DP7600 shown smaller than actual size with Model LC105 Load Cell ($295), see page F-36 Model Shown MADE IN USA ߜ 1,000 Readings Per Second Maximum ߜ 5-Digit Display , contacts. (Isolated transistor outputs not available when relays are installed.) Limit #1 and Limit #2 , Outputs: Four isolated open collector transistor outputs rated 30 Vdc maximum. Will sink up to 50 mA


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PDF DP7600 DP7600 LC105 16-Bit RS-232 RS-485
EVQPAD04M

Abstract: EVQPAE04M EVQPAD09K EVQPAD07K EVQPAD05R EVQPAE07K EVQPAC09K EVQPAC07K EVQPAC05R EVQPAC04M
Text: H 3.4 A' Part Numbers 0.7 4-f1.0 + 0.1 0 6.5 f3.6 (6.5) (7.8) B A , 3.5 0.7 0.7 (6.5) (7.8) 1.5 0.5 max. f3.6 B 6.5 3.4 A 4.1+0.1 0 , Dimensions in mm (not to scale) No. 3 Japan EVQPF (Bulk) 0.5 max. 3.5 4.0 7.1 f3.6 1.0 , Adhesive tape 18.0 f3.6 Adhesive tape shall not extend beyond base paper. A 0.5 3.85±0.70


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PDF EVQPC205K EVQPC305K EVQPC405K EVQPCP05K EVQPC605K EVQPC705K EVQPAD04M EVQPAE04M EVQPAD09K EVQPAD07K EVQPAD05R EVQPAE07K EVQPAC09K EVQPAC07K EVQPAC05R EVQPAC04M
2006 - EVQPAD04M

Abstract: EVQPAE04M EVQPAD09K EVQPAD07K EVQPAD05R EVQPAE07K EVQPAC09K EVQPAC07K EVQPAC05R EVQPAC04M
Text: ' Part Numbers 0.7 4-f1.0 + 0.1 ­0 6.5 f3.6 (6.5) (7.8) B A 3.5±0.5 0.5 max , max. f3.6 B 6.5 3.4 A 4.1+0.1 ­0 Recommended PWB piercing plan (Pitch tolerance , ) No. 3 Japan EVQPF (Bulk) 0.5 max. 3.5 4.0 7.1 f3.6 1.0 0.3 7.5 6.2 , -terminals type Without ground terminal 0.8 0.6 18.0 ­0 +1.0 B f3.6 +0.8 5.0 ­0.2


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PDF EVQPC205K EVQPC305K EVQPC405K EVQPCP05K EVQPC605K EVQPC705K EVQPAD04M EVQPAE04M EVQPAD09K EVQPAD07K EVQPAD05R EVQPAE07K EVQPAC09K EVQPAC07K EVQPAC05R EVQPAC04M
2010 - RS-186E

Abstract: No abstract text available
Text: and reel packaging, see page F-36 for drawings and reel information. CASE & BUSHING: Glass filled , , See page F-36 . SA1 RIGHT ANGLE, SURFACE MOUNT .276 (7,0) .041 (1,04) .354 (9,00) ø , M3, bushing D1, contact material B. Standard with tape and reel packaging-see page F-36 V3 V31 , ) Specifications and dimensions subject to change F­36 www.ck-components.com C&K Components


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PDF ET01M3D1SAKE ET01M3D1SA1BE RS-186E
2008 - Allen-Bradley heater elements

Abstract: Allen-Bradley W heater elements 1232l F2452 Allen-Bradley bulletin 815 type a Allen-Bradley 500 heater elements pj 2199 F7476 F3611 F609
Text: .15.9.15.9.16.2 . rca . .o. -r L i?:Ex . . t I F36 .17.5.17.5.17.9.18.7 I 1g . o p$j.[.`i;.;.l.;.;.~ . . . . . . . .I. . F36 .1.17.3 F37 , .13.5.13.5.14.1. .,. . F35.15.0.15.0.15.6 . . . . . F36 , .24.5.27.2.28.7.30.5 F36 .16.6.16.6.17.2 . . F41 , ~.15.6.15.8 . .17.5.17.7.18.0 . F36


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PDF
Not Available

Abstract: No abstract text available
Text: CLASS 3 TRANSFORMER F36 -170-C2 Description: The F36 -170-C2 is a single primary and dual secondary, split bobbin design which operates with an input of 115V. The secondaries are 18V @ 0.17A each. They can be used independently (up to 300V difference between them) or in series for double the voltage or in parallel for double the current. The split bobbin design eliminates the need for costly electrostatic shielding. Electrical Specifications (@25C) 1. Maximum Power: 6.0VA 2. Primary: 115V 3


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PDF F36-170-C2 F36-170-C2 2011/65/EU,
Supplyframe Tracking Pixel