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LM118AMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1077CIH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1055CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1056CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1077CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1222MH Linear Technology IC OP-AMP, MBCY, Operational Amplifier

eudyna GaAs FET Amplifier Datasheets Context Search

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2004 - eudyna GaAs FET Amplifier

Abstract: FLL2400IU-2C Eudyna Devices
Text: FLL2400IU-2C L-Band High Power GaAs FET FEATURES · · · · Push-Pull Configuration High , . DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that offers ease of , dB - 0.45 0.65 °C/W FLL2400IU-2C L-Band High Power GaAs FET ACPR vs. OUTPUT POWER , Frequency (GHz) 2 44 46 48 FLL2400IU-2C L-Band High Power GaAs FET S-PARAMETERS VDS = , push-pull FET . These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier


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PDF FLL2400IU-2C FLL2400IU-2C eudyna GaAs FET Amplifier Eudyna Devices
2004 - FLL1500IU-2C

Abstract: eudyna GaAs FET Amplifier
Text: calculated Push-Pull S-Parameter amplifier designs. 3 FLL1500IU-2C L-Band High Power GaAs FET Case , FLL1500IU-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power , operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that , +175 Unit V V W °C °C Eudyna recommends the following conditions for the reliable operation of GaAs , -2C L-Band High Power GaAs FET ACPR vs. OUTPUT POWER -25 -30 -35 VDS = 12V IDS = 4.0A fo = 2.14GHz W-CDMA


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PDF FLL1500IU-2C FLL1500IU-2C eudyna GaAs FET Amplifier
2004 - FLL1200IU-3

Abstract: No abstract text available
Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design , CASE STYLE: IU Edition 1.5 October 2004 1 FLL1200IU-3 L-Band High Power GaAs FET OUTPUT , ) Total Power Dissipation (mW) 200 FLL1200IU-3 L-Band High Power GaAs FET IMD vs. OUTPUT POWER , FLL1200IU-3 L-Band High Power GaAs FET Case Style "IU" 23.9±0.25 (0.941) 3 0.1 (0.004


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PDF FLL1200IU-3 FLL1200IU-3 Powe4888
2004 - FLL1500IU-2C

Abstract: imt 901 FLL1500
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull , Tch +175 °C Eudyna recommends the following conditions for the reliable operation of GaAs , Power GaAs FET ACPR vs. OUTPUT POWER VDS = 12V IDS = 4.0A fo = 2.14GHz W-CDMA Single Signal , 44 add (%) -25 IMD vs. OUTPUT POWER -35 FLL1500IU-2C L-Band High Power GaAs FET


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PDF FLL1500IU-2C FLL1500IU-2C imt 901 FLL1500
2004 - FLL800IQ-2C

Abstract: fll800
Text: FLL800IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull , % - 0.8 1.1 °C/W FLL800IQ-2C L-Band High Power GaAs FET ACPR vs. OUTPUT POWER , VDS = 12V IDS = 2.0A Wide Band Tuned FLL800IQ-2C L-Band High Power GaAs FET S-PARAMETERS , . 3 FLL800IQ-2C L-Band High Power GaAs FET Case Style "IQ" ­0.2 24.0 20.4 ­0.2 2


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PDF FLL800IQ-2C FLL800IQ-2C fll800
2004 - FLL810IQ-3C

Abstract: No abstract text available
Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES · · · · · · Push-Pull Configuration , . Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull , 11.5 15.0 A - 0.8 1.1 °C/W FLL810IQ-3C L-Band High Power GaAs FET IMD & IDS , f1 = 2.61GHz add (%) 50 VDS = 12V IDS = 5A FLL810IQ-3C L-Band High Power GaAs FET , push-pull FET . These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier


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PDF FLL810IQ-3C FLL810IQ-3C Symbo4888
2004 - L-Band

Abstract: No abstract text available
Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES · · · · · · Push-Pull Configuration High Power , Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design which , Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source , Pin = 43.0dBm 8.5 - Channel to Case - 1 FLL810IQ-4C L-Band High Power GaAs FET , -4C L-Band High Power GaAs FET S-PARAMETERS VDS = 12V, IDS = 2500mA S21 S12 MAG ANG MAG ANG 1.973 1.880


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PDF FLL810IQ-4C FLL810IQ-4C L-Band
2004 - Eudyna Devices power amplifiers

Abstract: No abstract text available
Text: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , FLL400IP-2 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 120 OUTPUT POWER & add vs , 20dBm 25dBm Frequency (GHz) 2 add (%) FLL400IP-2 L-Band Medium & High Power GaAs FET IMD , Medium & High Power GaAs FET Case Style "IP" Metal-Ceramic Hermetic Package 22±0.2 (0.866) 18.6±0.2 , A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-2 is a 35 Watt GaAs


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PDF FLL400IP-2 FLL400IP-2 Eudyna Devices power amplifiers
2004 - FLL1200IU-3

Abstract: fll120
Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design , Tch +175 °C Eudyna recommends the following conditions for the reliable operation of GaAs , CASE STYLE: IU Edition 1.5 October 2004 1 FLL1200IU-3 L-Band High Power GaAs FET OUTPUT , ) Total Power Dissipation (mW) 200 FLL1200IU-3 L-Band High Power GaAs FET IMD vs. OUTPUT POWER


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PDF FLL1200IU-3 FLL1200IU-3 Powe4888 fll120
2004 - L-Band

Abstract: 842 FET
Text: FLL600IQ-2 L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power , operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which offers , Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source , Point Edition 1.8 October 2004 1 FLL600IQ-2 L-Band High Power GaAs FET POWER DERATING CURVE , FLL600IQ-2 L-Band High Power GaAs FET IMD vs. OUTPUT POWER -28 -32 -36 -40 -44 -48 -52 -56 -60 26 VDS =


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PDF FLL600IQ-2 FLL600IQ-2 L-Band 842 FET
2004 - FLL810IQ-4C

Abstract: No abstract text available
Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES · · · · · · Push-Pull Configuration , . Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull , Power GaAs FET OUTPUT POWER vs. FREQUENCY IMD & IDS(RF) vs. TOTAL OUTPUT POWER -24 50 , ) VDS = 12V, IDS(DC) = 5A FLL810IQ-4C L-Band High Power GaAs FET FREQUENCY (MHZ) 2500 2600 , push-pull FET . These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier


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PDF FLL810IQ-4C FLL810IQ-4C Rat4888
2004 - Eudyna Devices

Abstract: eudyna fet FLL810IQ-3C
Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES · · · · · · Push-Pull Configuration , . Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull , Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source , 11.5 15.0 A - 0.8 1.1 °C/W FLL810IQ-3C L-Band High Power GaAs FET IMD & IDS , f1 = 2.61GHz add (%) 50 VDS = 12V IDS = 5A FLL810IQ-3C L-Band High Power GaAs FET


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PDF FLL810IQ-3C FLL810IQ-3C Symbo4888 Eudyna Devices eudyna fet
2004 - Eudyna Devices power amplifiers

Abstract: FLL600IQ-2 eudyna GaAs FET Amplifier
Text: amplifier designs. 3 FLL600IQ-2 L-Band High Power GaAs FET 1 2.0 (0.079) ±0.15 4 5 , FLL600IQ-2 L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design , .: Gain Compression Point 1 FLL600IQ-2 L-Band High Power GaAs FET OUTPUT POWER & add vs. INPUT , VDS = 12V IDS = 4.0A f = 1.96GHz FLL600IQ-2 L-Band High Power GaAs FET IMD vs. OUTPUT POWER


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PDF FLL600IQ-2 FLL600IQ-2 Commu4888 Eudyna Devices power amplifiers eudyna GaAs FET Amplifier
2004 - 601 121

Abstract: FLL800IQ-2C
Text: FLL800IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull , °C Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The , % - 0.8 1.1 °C/W FLL800IQ-2C L-Band High Power GaAs FET ACPR vs. OUTPUT POWER , VDS = 12V IDS = 2.0A Wide Band Tuned FLL800IQ-2C L-Band High Power GaAs FET S-PARAMETERS


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PDF FLL800IQ-2C FLL800IQ-2C 601 121
2004 - Eudyna Devices power amplifiers

Abstract: eudyna GaAs FET Amplifier FLL1200IU-2 Eudyna high power
Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull , . Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a , Tch +175 °C Eudyna recommends the following conditions for the reliable operation of GaAs , CASE STYLE: IU Edition 1.8 October 2004 1 FLL1200IU-2 L-Band Medium & High Power GaAs FET , Dissipation (mW) 200 FLL1200IU-2 L-Band Medium & High Power GaAs FET IMD vs. OUTPUT POWER VDS = 12V


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PDF FLL1200IU-2 FLL1200IU-2 t4888 Eudyna Devices power amplifiers eudyna GaAs FET Amplifier Eudyna high power
2004 - FLL1500IU-2C

Abstract: fujitsu l-band power fets FLL1500
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull , Power GaAs FET ACPR vs. OUTPUT POWER VDS = 12V IDS = 4.0A fo = 2.14GHz W-CDMA Single Signal , 44 add (%) -25 IMD vs. OUTPUT POWER -35 FLL1500IU-2C L-Band High Power GaAs FET , push-pull FET . These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier


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PDF FLL1500IU-2C FLL1500IU-2C fujitsu l-band power fets FLL1500
2004 - FLL600IQ-3

Abstract: No abstract text available
Text: Push-Pull S-Parameter amplifier designs. 3 FLL600IQ-3 L-Band Medium & High Power GaAs FET 2 , FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration , operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that offers , Power GaAs FET OUTPUT POWER & add vs. INPUT POWER 140 50 49 120 VDS = 12.0V IDS = 4.0A f , CURVE FLL600IQ-3 L-Band Medium & High Power GaAs FET IMD vs. OUTPUT POWER -28 -32 VDS = 12V


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PDF FLL600IQ-3 FLL600IQ-3 hig4888
2004 - Eudyna Devices power amplifiers

Abstract: C4727 FLL400IP-2 eudyna GaAs FET Amplifier
Text: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration , Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a , October 2004 G.C.P.: Gain Compression Point 1 FLL400IP-2 L-Band Medium & High Power GaAs FET , FLL400IP-2 L-Band Medium & High Power GaAs FET IMD (dBc) IMD vs. OUTPUT POWER -12 -14 -16 -18 , Medium & High Power GaAs FET Case Style "IP" Metal-Ceramic Hermetic Package 2-1 (0.039) 3 6


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PDF FLL400IP-2 FLL400IP-2 Eudyna Devices power amplifiers C4727 eudyna GaAs FET Amplifier
2004 - FLL1200IU-2

Abstract: No abstract text available
Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull , . Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a , CASE STYLE: IU Edition 1.8 October 2004 1 FLL1200IU-2 L-Band Medium & High Power GaAs FET , Dissipation (mW) 200 FLL1200IU-2 L-Band Medium & High Power GaAs FET IMD vs. OUTPUT POWER VDS = 12V , push-pull FET . These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier


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PDF FLL1200IU-2 FLL1200IU-2 t4888
2004 - L-Band

Abstract: Eudyna Devices power amplifiers
Text: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that offers , +175 Unit V V W °C °C Eudyna recommends the following conditions for the reliable operation of GaAs , -3 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 140 OUTPUT POWER & add vs. INPUT POWER 50 , FLL600IQ-3 L-Band Medium & High Power GaAs FET IMD vs. OUTPUT POWER -28 -32 -36 -40 -44 -48 -52 -56 -60


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PDF FLL600IQ-3 FLL600IQ-3 L-Band Eudyna Devices power amplifiers
2004 - Not Available

Abstract: No abstract text available
Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power , operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that offers , +175 Unit V V W °C °C Eudyna recommends the following conditions for the reliable operation of GaAs , High Power GaAs FET ACP vs. OUTPUT POWER VDS = 12V IDS = 1.5A fo = 2.14GHz W-CDMA Single Signal -5MHz , GaAs FET S-PARAMETERS VDS = 12V, IDS = 750mA FREQUENCY (MHZ) 1000 1100 1200 1300 1400 1500 1600


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PDF FLL600IQ-2C FLL600IQ-2C
2005 - High Power GaAs FET

Abstract: GaAs FET 15A fll400ik-2c ED-4701 RM1101
Text: FLL400IK-2C High Voltage - High Power GaAs FET FEATURES High Output Power: P1dB=46.0dBm(Typ , Sealed Package DESCRIPTION The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited for use in W-CDMA base station amplifier as long term reliability. Fujitsu's stringent Quality Assurance Program , Voltage - High Power GaAs FET Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit:mm 2 FLL400IK-2C High Voltage - High Power GaAs FET For further information please


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PDF FLL400IK-2C 17GHz FLL400IK-2C High Power GaAs FET GaAs FET 15A ED-4701 RM1101
2004 - Fujitsu GaAs FET Amplifier design

Abstract: FLL600IQ-2C
Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull , - 0.8 1.2 °C/W FLL600IQ-2C L-Band High Power GaAs FET ACP vs. OUTPUT POWER -25 , 36 40 add (%) 48 Output Power (dBm) 44 FLL600IQ-2C L-Band High Power GaAs FET , GaAs FET 2 0.1 (0.004) 17.4±0.2 (0.685) 4.7 8.0 (0.315) 3 6 4-2.6±0.2


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PDF FLL600IQ-2C FLL600IQ-2C Fujitsu GaAs FET Amplifier design
2004 - 1 928 498 056

Abstract: FLL400IP-3 s-band 50 Watt power amplifier 1 928 498 016 1 928 498 014
Text: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration , Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a , Case Temperature (°C) 2 200 41 43 FLL400IP-3 L-Band Medium & High Power GaAs FET , Power GaAs FET Case Style "IP" Metal-Ceramic Hermetic Package 2-1 (0.039) 5 2-R1.3±0.2 (0.051 , : Drain Unit: mm (inches) CAUTION Eudyna Devices Inc. products contain gallium arsenide ( GaAs ) which


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PDF FLL400IP-3 FLL400IP-3 1 928 498 056 s-band 50 Watt power amplifier 1 928 498 016 1 928 498 014
2005 - fujitsu gaas fet

Abstract: GAAS FET AMPLIFIER High Power GaAs FET Eudyna Devices ED-4701 FLL400IK-2
Text: FLL400IK-2 High Voltage - High Power GaAs FET FEATURES High Output Power: P1dB=46.5dBm(Typ , Sealed Package DESCRIPTION The FLL400IK-2 is a 40 Watt GaAs FET that is specially suited for use in PHS base station amplifier as long term reliability. Fujitsu's stringent Quality Assurance Program , Voltage - High Power GaAs FET Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit:mm 2 FLL400IK-2 High Voltage - High Power GaAs FET For further information please contact


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PDF FLL400IK-2 FLL400IK-2 fujitsu gaas fet GAAS FET AMPLIFIER High Power GaAs FET Eudyna Devices ED-4701
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