The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

equivalent transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
ERI - 35 - 2 YE 0515

Abstract: transistor 2SC2458 diode marking YF RN1241A TRANSISTOR MARKING YB MQ SC-62 2SA1314 2SC3326
Text: ] Quick Selector Guide 3. Quick Selector by Package Internal Equivalent Transistor : 2SA1832 M a , Internal Equivalent Transistor : 2SC4116 VCE (sat) max. fT TYP. Vc e Cob TYP. VCB M arking ÏC (V , Equivalent Transistor : 2SA1586 V C E (sat) MAX. !C (V) - 0 .3 - 0 .3 - 0 .3 - 0 .3 - 0 .3 - 0 .3 - 0 .3 - 0 , .1 -0 .1 -0 .1 - Internal Equivalent Transistor : 2SA1873 V c E (s a t) MAX. ic (V) - 0 .3 - 0 , Internal Equivalent Transistor : HN1C01FU v C E (sat) MAX. ic (V) 0.3 0-3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3


OCR Scan
PDF 80MIN. 120-4O 22kil RN1001 47kfi RN1001 RN2001 RN1002 RN2002 ERI - 35 - 2 YE 0515 transistor 2SC2458 diode marking YF RN1241A TRANSISTOR MARKING YB MQ SC-62 2SA1314 2SC3326
FeRAM

Abstract: PTSC0007 BUT 11 Transistor .2t transistor equivalent transistor "Ferroelectric RAM" stmicroelectronics eeprom TRANSISTOR EQUIVALENT world transistor equivalent and data
Text: Flexibility MPG - PTSC0007 - 009 - 3 ® Floating Gate Transistor Equivalent transistor Id Floating gate transistor Neutral Vcg Gate coupling ratio g = Cpp / Ctot Vfg = g x Vcg Id , oxide field ® Double Poly EEPROM Cell Double Poly ­ Two transistor cell Programming and Erasing , limitation will come soon due to high voltage transistor cell Multi-value cell capability Short programming time (~10ms) But Cell transistor must withstand high voltages Very high programming current


Original
PDF PTSC0007 100ns) 100ms-1ms) FeRAM BUT 11 Transistor .2t transistor equivalent transistor "Ferroelectric RAM" stmicroelectronics eeprom TRANSISTOR EQUIVALENT world transistor equivalent and data
gummel

Abstract: small signal high frequency bipolar transistor IC sequential DATA BASE 60Ghz gex 96 a TRANSISTOR 30GHZ transistor RBV cbv2 Y parameters of transistors in high frequency
Text: matrix is derived for a relative simple equivalent transistor circuit (see figure 1). The intrinsic , ®0 Cb V2 Figure 1: Small signal equivalent transistor circuit for deriving the common emitter , the current gain ¡3 is due to high injection in the base. With decreasing transistor dimensions the , already to determine the cut off frequency fT of the bipolar transistor . From the same measurements we can , can be extracted. Experimental results of an NPN transistor in the QUBiC3 process [4] are shown and


OCR Scan
PDF ED-31 2048/JessiT28 30GHz, 60Ghz gummel small signal high frequency bipolar transistor IC sequential DATA BASE gex 96 a TRANSISTOR 30GHZ transistor RBV cbv2 Y parameters of transistors in high frequency
Marcon capacitor Co

Abstract: CACFM D1N54 2SC3279 equivalent 2SK1112 Marcon CACFM 1A220M 8436 marcon capacitor 41178
Text: ^F), Marcon Electric Co., Ltd. or equivalent . Transistor : 2SC3279, Toshiba Corp. or equivalent . 6 , : CACFM1A220M (22 ¿/F), Marcon Electric Co., Ltd. or equivalent . Transistor : 2SC3279, Toshiba Corp. or , . Transistor : 2SC3279, Toshiba Corp. or equivalent . 7 STEP-UP SWITCHING REGULATORS S-8435/8436 Series_ 11 , . Transistor : 2SC3279, Toshiba Corp. or equivalent . 12. S-8436FF-YK-X (Unless otherwise specified : Ta = 25 , ), Marcon Electric Co., Ltd. or equivalent . Transistor : 2SC3279, Toshiba Corp. or equivalent . 8 STEP-UP


OCR Scan
PDF RCH855 47//H) 2SK1112* /50mA 2SK1112. Marcon capacitor Co CACFM D1N54 2SC3279 equivalent 2SK1112 Marcon CACFM 1A220M 8436 marcon capacitor 41178
D913

Abstract: UNELCO MICA CAPACITORS VK200
Text: . EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector , -E ffect Transistor N-Channel Enhancement-Mode . . . designed primarily for linear large-signal , VK200/4B Ferrite Choke or Equivalent , 3.0 (iH L2 - Ferrite Bead(s), 2.0 (iH R1, R2 - 51 0/1.0 W Carbon , . Figure 7. Series Equivalent Impedance RFC2 RF OUTPUT C1, C2, C8 - Arco 463 or equivalent C3 - , Unelco J101 C9 - Arco 262 or equivalent C10 - 0.05 nF Ceramic C11 - 15 (iF, 60 WV Electrolytic D1


OCR Scan
PDF RF150 D913 UNELCO MICA CAPACITORS VK200
MRF140 equivalent

Abstract: arco capacitors 262
Text: gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR , Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 , Equivalent , 3.0 L2 - Ferrite Bead(s), 2.0 nH 01, R2 - 51 £2/1.0 W Carbon R3 - 1.0 £2/1.0 W Carbon or , output power, voltage and frequency. NOTE: Gate Shunted by 25 Ohms. Figure 7. Series Equivalent Impedance RFC1 C1, C2, C8 - Arco 463 or equivalent C3 - 25 pF, Unelco C4 - 0.1 nF, Ceramic C5 -


OCR Scan
PDF MRF140 MRF140 equivalent arco capacitors 262
1995 - smd transistor h2a

Abstract: H2A SMD transistor H2A transistor SMD transistor smd H2A SMD Transistor Y8 HSA2-040SAA/A2320A HSA2-040SIA/A2S23 smd transistor Y10 TSHARC A2 hsa2040saa
Text: Fairchild: MMBT3906 or equivalent TRANSISTOR GP PNP AMP SOT-23 Abracon: ABC2-4.000MHZ-D or Citizen , -323 Q1 1 3906 Fairchild: MMBT3906 or equivalent TRANSISTOR GP PNP AMP SOT-23 Abracon: ABC2 , equivalent TRANSISTOR GP PNP AMP SOT-23 Abracon: ABC2-4.000MHZ-D or Citizen: CS20-4.000MABJ-UT or , protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent : MS-013 Drawing No. C04 , Value Unit C1 5 0.1 uF Panasonic: ECJ-1VB1E104K or equivalent CAP .1UF 25V CERAMIC


Original
PDF \PigData\MasterBinders\03 RS-232 000MABJ-UT 000MHZ CD74HC4052PWR 16-TSSOP HSAX-040SIA SN74AHC1G04DCKR SC70-5 74HC4052 smd transistor h2a H2A SMD transistor H2A transistor SMD transistor smd H2A SMD Transistor Y8 HSA2-040SAA/A2320A HSA2-040SIA/A2S23 smd transistor Y10 TSHARC A2 hsa2040saa
TH 2267

Abstract: equivalent transistor broadband transformers
Text: . EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor , Products Corp. #2667540001 All capacitors ATC type 100/200 chips or equivalent unless otherwise noted , Frequency versus Drain Current MRF154 2-264 MOTOROLA RF DEVICE DATA Figure 8. Series Equivalent , Electrolytic C6, C7 - 0.1 fiF Ceramic, (ATC 200/823 or Equivalent ) D1 - 28 V Zener, 1N5362 or Equivalent D 3


OCR Scan
PDF
MOTOROLA circuit for mrf150

Abstract: MRF150 mrf150 equivalent UNELCO MICA CAPACITORS
Text: external zener diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor , /100 V Electrolytic L1 - VK200/4B Ferrite Choke or Equivalent , 3.0 (iH L2 - Ferrite Bead(s), 2.0 uH , . Figure 7. Series Equivalent Impedance RFC2 < +50 Vdc BIAS 0-12 V > W V - » t RF OUTPUT rA -4- -4^ RF INPUT C1, C2, C8 - Arco 463 or equivalent C3 - 25 pF, Unelco C4 - 0.1 nF


OCR Scan
PDF MRF150 MRF150 MOTOROLA circuit for mrf150 mrf150 equivalent UNELCO MICA CAPACITORS
MOTOROLA circuit for mrf150

Abstract: UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor
Text: gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR , Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 , Leads C10 - 10 nF/100 V Electrolytic L1 - VK200/4B Ferrite Choke or Equivalent , 3.0 uH L2 - , MRF150 4.2-127 NOTE: Gate Shunted by 25 Ohms. Figure 7. Series Equivalent Impedance RFC2 < + 5 0 Vdc BIAS 0 -12 V > w v RF OUTPUT RF INPUT C1, C2, C8 - Arco 463 or equivalent


OCR Scan
PDF MRF150 MRF150 MOTOROLA circuit for mrf150 UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor
mrf154 amplifier

Abstract: MRF154 Mrf154 M
Text: LC matching networks. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY C ollector , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor , ATC type 100/200 chips or equivalent unless otherwise noted. Figure 1. 30 MHz Test C ircu it , SOLUTIONS DEVICE DATA MRF154 4.2-143 Figure 8. Series Equivalent Impedance C1 - 1000 pF Ceramic , Ceramic, (ATC 200/823 or Equivalent ) D1 - 28 V Zener, 1N5362 or Equivalent D3 - 1N4148 IC1 - MC1723 L1


OCR Scan
PDF MRF154 mrf154 amplifier Mrf154 M
Not Available

Abstract: No abstract text available
Text: drain current level. This is equivalent to f j for bipolar transistors. EQUIVALENT TRANSISTOR , M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency , . Figure 7. Series Equivalent Impedance RFC1 C 1 , C2. C 8 - A rco 463 or equivalent C 3 - 25 pF , nelco J101 C9 - A rco 262 or equivalent C 10 - 0.05 ^F, C e ram ic C11 - 15 jiF, 35 W V E lectrolytic


OCR Scan
PDF
Not Available

Abstract: No abstract text available
Text: drain current level. This is equivalent to f j for bipolar transistors. EQUIVALENT TRANSISTOR , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur , Chip or Equivalent C7 - 10 |iF, 100 V Electrolytic C8 - 100 pF Dipped Mica L1 - VK200 20/4B Ferrite Choke or Equivalent (3.0 jiH ) L2 - Ferrite Bead(s), 2.0 nH R1, R2 - 200 Q, 1/2 W Carbon R3 - 4.7


OCR Scan
PDF MRF148
Not Available

Abstract: No abstract text available
Text: drain current level. This is equivalent to fy for bipolar transistors. EQUIVALENT TRANSISTOR , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF148 RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for power amplifier applications in industrial , . C 1, C2, C3, C4, C5, C6 - 0.1 nF Ceramic Chip or Equivalent C7 - 10 fiF, 100 V Electrolytic C8 - 100 pF Dipped Mica L1 - VK200 20/4B Ferrite Choke or Equivalent (3.0 uH) L2 - Ferrite Bead(s), 2.0


OCR Scan
PDF MRF148 MRF148
MRF138

Abstract: MCM 2128 Variable Capacitors Arco
Text: gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF138 RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed fo r power am plifier applications in industrial , te Shunted By 100 n Figure 9. Large-Signal Series Equivalent Input/Output Impedance, Zjnt , Z q l , the small signal unity current gain frequency at a given drain current level. This is equivalent to f


OCR Scan
PDF MRF138 MRF138 MCM 2128 Variable Capacitors Arco
mrf138

Abstract: ARC-2
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor , nF Ceramic Chip or Equivalent C7 - 10 |.iF, 100 V Electrolytic C8 - 10 pF Dipped Mica C9 - 68 pF , versus Drain Current Figure 8. DC Safe Operating Area Figure 9. Larg e-S ig nal Series Equivalent , frequency at a given drain current level. This is equivalent to f j for bipolar transistors. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector .


OCR Scan
PDF MRF138 ARC-2
D1115

Abstract: Arco 262 capacitor
Text: gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR , Equivalent , 3.0 jiH L2 - Ferrite Bead(s), 2.0 jiH R1, R2 - 51 n/1.0 W Carbon R3 - 1.0 iJ/1.0 W Carbon or , . Series Equivalent Impedance R FC 1 C1, C2, C8 - Arco 463 or equivalent C3 - 25 pF, Unelco C4 - , - Arco 262 or equivalent C10 - 0.05 |iF, Ceramic C11 - 15 fiF, 35 WV Electrolytic L1 - 3/4 , frequency at a given drain current level. This is equivalent to f j for bipolar transistors. Gate Voltage


OCR Scan
PDF MRF140 D1115 Arco 262 capacitor
175mhz

Abstract: No abstract text available
Text: , an external zener diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY C ollector , Chip or Equivalent C7 - 10 jiF, 100 V Electrolytic C8 - 100 pF Dipped Mica L1 - VK200 20/4B Ferrite Choke or Equivalent (3.0 nH) L2 - Ferrite Bead(s), 2.0 |iH R1, R2 - 200 Q, 1/2 W Carbon R3 - 4.7 Q , represents the small signal unity current gain frequency at a given drain current level. This is equivalent


OCR Scan
PDF MRFT48 175mhz
2002 - CMD333UBC

Abstract: CMD333UGC CMD383UBC CMD383UGC LX1990 LX1990ILM MMBT2222LT1
Text: 2 Manufacturer & Part # MICROSEMI LX1990ILM ON SEMI MMBT2222LT1 or equivalent Chicago Miniature Lamp CMD333UGC or equivalent Chicago Miniature Lamp CMD383UBC or equivalent Transistor , NPN


Original
PDF LX1990 CMD383UGC CMD333UBC MMBT2222LT1 LX190 CMD333UBC CMD333UGC CMD383UBC CMD383UGC LX1990ILM MMBT2222LT1
free transistor and ic equivalent data

Abstract: free transistor Germanium Amplifier Circuit diagram germanium transistors NPN silicon germanium k2a2 silicon bipolar transistor low noise amplifier GERMANIUM TRANSISTOR Germanium Amplifier MAX2247
Text: detailed high-frequency equivalent model for the bipolar transistor (the Giacoleto model-see Figure 2 , , considering the equivalent transistor circuit of Figure 2. In effect, the model is an RC lowpass filter whose , in the down-conversion link is noise created by the LNA's first transistor input stage. Noise figure , . The thermal noise generated by parasitic base resistance (Rbb´) in a transistor is Vn(f) = 4kTRbb , . 10-19 coulombs), and is the transistor 's DC current gain. Thus, the total noise spectral density


Original
PDF MAX2644: MAX2645: MAX2648: MAX2649: MAX2651: MAX2654: MAX2680: MAX2683: MAX3273: MAX3892: free transistor and ic equivalent data free transistor Germanium Amplifier Circuit diagram germanium transistors NPN silicon germanium k2a2 silicon bipolar transistor low noise amplifier GERMANIUM TRANSISTOR Germanium Amplifier MAX2247
0.1 mF ceramic disc capacitor

Abstract: MRF157 keystone carbon Fair-Rite ATC
Text: comparable LC matching networks. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY C o lle ctor , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Pow er Field Effect Transistor , : 2 Each, Fair-Rite Products Corp. #2667540001 All capacitors ATC type 100/200 chips or equivalent , Note: To determine Z o l*. use formula - 2~P^- = ^ OL* Figure 10. Sériés Equivalent , , Mounted Under T2 01 - 1N5357A or Equivalent 02, D3 - 1N4148 or Equivalent . IC1 - MC1723 (723) Voltage


OCR Scan
PDF MRF157 0.1 mF ceramic disc capacitor keystone carbon Fair-Rite ATC
723 VOLTAGE REGULATOR

Abstract: keystone carbon thermistor MC1723 rmc disc capacitor
Text: comparable LC matching networks. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY C ollector , Device Power Field Effect Transistor N-Channel Enhancement Mode Designed primarily for linear , 100/200 chips or equivalent unless otherwise noted. Figure 1. 30 MHz Test Circuit MRF157 2-176 , determine Z q l ', use formula ¿p = ^O L* Figure 10. Series Equivalent Impedance MRF157 2-178 , 1000 pF Units in Series, Mounted Under T2 D1 - 1N5357A or Equivalent D2, 0 3 - 1N4148 or Equivalent


OCR Scan
PDF MRF157 MRF157 723 VOLTAGE REGULATOR keystone carbon thermistor MC1723 rmc disc capacitor
vk200 choke

Abstract: arco 465 UNELCO MICA CAPACITORS VK200-4B MRF140 J101 2204B VK200 FERRITE k 246 transistor fet Nippon capacitors
Text: diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector . . . . . . . . . . . . , RF Power Field-Effect Transistor MRF140 N­Channel Enhancement­Mode Designed primarily for , , Tantalum C12 - 330 pF, Dipped Mica (Short leads) L1 - VK200/4B Ferrite Choke or Equivalent , 3.0 µH , Ohms. Figure 7. Series Equivalent Impedance RFC1 + 28 V + BIAS 0 ­ 12 V R1 C10 L4 , C3 R2 C1, C2, C8 - Arco 463 or equivalent C3 - 25 pF, Unelco C4 - 0.1 µF, Ceramic C5 -


Original
PDF MRF140/D MRF140 vk200 choke arco 465 UNELCO MICA CAPACITORS VK200-4B MRF140 J101 2204B VK200 FERRITE k 246 transistor fet Nippon capacitors
2001 - mrf154 amplifier

Abstract: on 5269 transistor
Text: design than comparable LC matching networks. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector . , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor , capacitors ATC type 100/200 chips or equivalent unless otherwise noted. Figure 1. 30 MHz Test Circuit , IDQ = 800 mA Pout = 600 W Figure 8. Series Equivalent Impedance BIAS ­ 30 ­ 40 V + R5 R4 IC1 R7 , 0.1 µF Ceramic, (ATC 200/823 or Equivalent ) D1 - 28 V Zener, 1N5362 or Equivalent D3 - 1N4148 IC1 -


Original
PDF MRF154 MRF154 mrf154 amplifier on 5269 transistor
1997 - mrf154 amplifier

Abstract: AN749 MRF154 2225C trifilar mc1723 ic MC1723 application notes T1/FERRITE TRANSFORMER 36803 Nippon capacitors
Text: networks. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY ARCHIVE INFORMATION Collector Emitter Base , Effect Transistor MRF154 N­Channel Enhancement­Mode MOSFET Designed primarily for linear , . #2667540001 All capacitors ATC type 100/200 chips or equivalent unless otherwise noted. Figure 1. 30 MHz , 600 W 7.5 4.0 2.0 ARCHIVE INFORMATION Zo = 10 Figure 8. Series Equivalent Impedance , 0.1 µF Ceramic, (ATC 200/823 or Equivalent ) D1 - 28 V Zener, 1N5362 or Equivalent D3 - 1N4148 IC1


Original
PDF MRF154/D MRF154 mrf154 amplifier AN749 MRF154 2225C trifilar mc1723 ic MC1723 application notes T1/FERRITE TRANSFORMER 36803 Nippon capacitors
Supplyframe Tracking Pixel