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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BD9V101MUF-LB BD9V101MUF-LB ECAD Model ROHM Semiconductor 16V to 60V, 1A 1ch 2.1MHz Synchronous Buck Converter Integrated FET (Industrial Grade)
BD9G102G-LB BD9G102G-LB ECAD Model ROHM Semiconductor 6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade)
BD9G341AEFJ BD9G341AEFJ ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET
BD9A600MUV BD9A600MUV ECAD Model ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter
BD9G341AEFJ-LB BD9G341AEFJ-LB ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade)
BD9C601EFJ BD9C601EFJ ECAD Model ROHM Semiconductor 4.5V to 18V Input, 6.0A Integrated MOSFET 1ch Synchronous Buck DC/DC Converter

equivalent transistor e176 Datasheets Context Search

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smd marking 2D

Abstract: CDFP4-F28 MIL-STD-481 Instructions
Text: DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. I T00470fl 0004743 414 m 5962- E176 , application of specified timing signals and conditions, including: Equivalent ac test conditions: Devices: All. Output load: 1 TTL gate and CL = 100 pF (minimum) or equivalent circuit. Input rise and fall times i 10 , +125°C, minimum. (3) Devices shall be burned-in containing a checkerboard pattern or equivalent . b , (minimum, e.g., high temperature equivalent subgroups 2, 8A, and 10 may be used) after cycling and bake


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PDF 5962-R115-92. MIL-BUL-103. MIL-BUL-103 DQ0477Q smd marking 2D CDFP4-F28 MIL-STD-481 Instructions
60395 xicor

Abstract: 1fn41 60395 5962-8852503YX 5962-8852503XX MIL-STD-481 Instructions 5962-8852515ZX 22202 8852506YX TM28C256-350/60395 xicor
Text: . Approved for public release; distribution is unlimited. 5962- E176 -93 1. SCOPE 1.1 Scope , specified timing signals and conditions, including: Equivalent ac test conditions: Devices: All. Output load: 1 TTL gate and CL = 100 pF (minimum) or equivalent circuit. Input rise and fall times 10 ns , burned-in containing a checkerboard pattern or equivalent . b. Interim and final electrical test parameters , retention pattern and test using subgroups 1, 7, and 9 (minimum, e.g., high temperature equivalent


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PDF toB-15 AT28C256E-15FM/883 X28C256FMB-15 1FN41 60395 xicor 1fn41 60395 5962-8852503YX 5962-8852503XX MIL-STD-481 Instructions 5962-8852515ZX 22202 8852506YX TM28C256-350/60395 xicor
MARKING J1A SOP

Abstract: CDFP4-F28 hh008 MARKING SMD 43t 5962-88525 MIL-STD-481 Instructions 5962-88525 marking
Text: release; distribution is unlimited. I ^00470fl 0004745 414 A 5962- E176 -93 1. SCOPE 1.1 Scope. This , application of specified timing signals and conditions, including: Equivalent ac test conditions: Devices: All. Output load: 1 TTL gate and CL = 100 pF (minimum) or equivalent circuit. Input rise and fall , checkerboard pattern or equivalent . b. Interim and final electrical test parameters shall be as specified in , retention pattern and test using subgroups 1, 7, and 9 (minimum, e.g., high temperature equivalent subgroups


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PDF 5962-R115-92. MIL-BUL-103. MIL-BUL-103 T0D470Ã DQQ4770 MARKING J1A SOP CDFP4-F28 hh008 MARKING SMD 43t 5962-88525 MIL-STD-481 Instructions 5962-88525 marking
qml-38535

Abstract: acts00
Text: unlimited. 5962- E176 -96 R0ÜM70fl □0174tm 221 ■1. SCOPE 1.1 Scope. This drawing forms a part of a one , › INPUT OUTPUT NOTES: 1. CL = 50 pF minimum or equivalent (includes test jig and probe capacitance). 2. Rl = 500Q or equivalent . 3. Input signal from pulse generator: VIN = 0.0 V to 3.0 V; PRR s 10 MHz; t s


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PDF 5962-E176-96 M70fl MIL-BUL-103. MIL-BUL-103 0D17SDÃ qml-38535 acts00
Not Available

Abstract: No abstract text available
Text: capacitors eliminate the need for bypassing on the motherboard and offer superior performance over equivalent , RAM MODULE Dynamic R A M Modules E176 INSTRUM ENTS POST- OPF.'CE 8C> I-S-43 · H OU S TO N. T E


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PDF TM4256EQ5, TM4257EQ5 24-Pin EQ5-15 EQ5-20 77C01
24E166

Abstract: E141-E142 GDIP1-T16 E74-E75 E137-E138 220 e78
Text: type (MBD 501 or equivalent ). 4. Bandwidth of oscilloscope used for waveform measurement should be 50


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PDF MIL-M-38510/113B MIL-M-38510/113A MIL-PRF-38535 DAC-08 DAC-08A 24E166 E141-E142 GDIP1-T16 E74-E75 E137-E138 220 e78
QML-38535

Abstract: AG qd SMD CDFP3-F28 military marking symbols 1GD47D
Text: DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 5962- E176 -97 TDD47GÖ 0Q3201G , reference levels of 2.0 V, input pulse levels of 0 to Vqq, and the output load = 1 TTL equivalent load and


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PDF -65647RH-8 5962F9582301VYC HS9-65647RH-Q 003202e! QML-38535 AG qd SMD CDFP3-F28 military marking symbols 1GD47D
1993 - transistor equivalent table chart

Abstract: 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
Text: equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was , pF Transistor output resistance 199 Ohms 92 Ohms 4.6 pF 5.0 pF 12.4 dB 8.2 dB , reactance. Note also that the transistor 's output resistances and power gains are considerably different


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PDF AN282A/D AN282A mid-1960 transistor equivalent table chart 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
1998 - Philips high frequency bipolar transistor with Ft

Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
Text: power amplifier fundamentals 1.1.3 Transmitting transistor design width'). And, an equivalent to , , is published in data sheets as Cre: Transistor equivalent circuit At this point, it is useful to introduce a basic equivalent circuit of a bipolar RF transmitting transistor , and a few simple , CBE. Figure 1-12 shows a simple equivalent circuit of an RF transistor with load circuit. Note , . Fig.1-12 Simple equivalent circuit of a bipolar RF transmitting transistor . 1998 Mar 23


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PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
1993 - motorola rf Power Transistor

Abstract: transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849
Text: equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was , transistor 's output resistances and power gains are considerably different for the two modes of operation , input and output impedance data for the transistor . The design method described in this report hinges


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PDF AN282A/D AN282A mid-1960 motorola rf Power Transistor transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849
2N5995

Abstract: transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
Text: Overlay Transistor For 12.5-Volt Applications in VHF Communications Equipment Features: â , n-p-n planar transistor featuring overlay emitter-electrode construction. This type features a hermetic , type is designed for stripline as well as lumped-constant circuits. This transistor is completely , derating. Li 1/2 turn No. 14 wire, 1/4 in. I.D. RFC - Z - 450 ii, Ferroxcube VK-200-09/3B or equivalent Ci 7-100pF, Arco 423 or equivalent C2 - 4-40 pF, Arco 422 or equivalent C3 ■0.1 /iF ceramic C4


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PDF 2N5995 175-MHz 92SS-3763R3 2N5995 transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
h1208

Abstract: equivalent transistor c 495 92CS-223S5 TA8340 radiosonde NYTRONICS choke Allen-Bradley carbon resistor H-1208 92CM-22389 Nytronics relay
Text: RFC: choke, 0.12 ¿iH, Nytronics or equivalent L: 0.150-in. (3.8 mm) transistor lead length R1: 0.82 , -1208 750-mW, 1.68-GHz Oscillator Transistor Features: ■Emitter-ballasting resistors ■750 , lumped-element circuits Type 41038* is an epitaxial silicon n-p-n planar transistor with overlay multiple-emitter-site construction and emitter-ballasting resistors. Intended applications for this transistor include , . VCE0 21 V EMITTER-TO-BASE VOLTAGE .VEB0 3.5 V TRANSISTOR


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PDF H-1208 750-mW, 68-GHz 750-rnW TA8340. h1208 equivalent transistor c 495 92CS-223S5 TA8340 radiosonde NYTRONICS choke Allen-Bradley carbon resistor H-1208 92CM-22389 Nytronics relay
Narda 904N

Abstract: transistor et 455 sealectro 2N5470 equivalent transistor rf AN3764 Narda Microwave TA7003 WESTINGHOUSE ELECTRIC 0/Narda 904N
Text: silicon n-p-n planar transistor employing the overlay emitter-electrode construction. It is intended for , operation in the common-base amplifier configuration. This transistor can be used in both large and , 2N5470 Power Transistor ," by G. Hodowanec, O.P. Hart, and H.C. Lee. »Formerly RCA Dev. Type No. TA7003 , TRANSISTOR DISSIPATION:.PT At case temperatures up to 25 °C . 3.5 W At case temperatures above , SILICON N-P-N "overlay" TRANSISTOR - T JEDEC TO-215AA For UHF/Microwave Power Amplifiers, Microwave


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PDF 2N5470 RCA-2N5470* 2N5470 2N5470, AN3764, 16-Detail Narda 904N transistor et 455 sealectro equivalent transistor rf AN3764 Narda Microwave TA7003 WESTINGHOUSE ELECTRIC 0/Narda 904N
56-590-65/4A

Abstract: ferroxcube 56-590-65/4a rca 632 Arco 423 arco 404 2N5996 i7356 RCA Power Transistor 4 225 VK20009-3B
Text: -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N Device for 12.5-Volt Applications in VHF Communications , JS-6 RDF-3/JS-9 RDF-7. RCA type 2N59963 is an epitaxial silicon n-p-n planar transistor featuring , individual ballast resistance in each of the emitter sites for stabilization. The transistor is completely , equivalent Ci - 7-1 OOpF, Arco 423 or equivalent C2 - 4-40 pF, Aorco 422 or equivalent C3 -0.1 /jF ceramic C4 - 0.001 jiF feedthrough C5 - 62 pF silver mica Cq - 14-150pF, Arco 424 or equivalent C7 - 24-200pF


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PDF 2N5996 175-MHz 15-watt COLLECTOR50 V61R3 2N5996 56-590-65/4A ferroxcube 56-590-65/4a rca 632 Arco 423 arco 404 i7356 RCA Power Transistor 4 225 VK20009-3B
1994 - motorola transistor

Abstract: Using Linvill Techniques for R. F. Amplifiers MM1941 2N2221 Using Linvill Techniques transistor for RF amplifier and mixer an238 motorola amplifier mixer circuit high frequency mixer 2N2221A
Text: where L = 43.5 µH. In this case CT = 25 pF. From the y­parameter equivalent of the transistor the , the products referenced may be discontinued. Transistor Mixer Design Using 2-Port Parameters , determine the potential stability of the transistor . The Linvill stability factor C is computed from the , is less than 1, the transistor is unconditionally stable. If C is greater than 1, the transistor is , is with both input and output terminals of the transistor open circuited. With no external feedback


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PDF AN238/D AN238 motorola transistor Using Linvill Techniques for R. F. Amplifiers MM1941 2N2221 Using Linvill Techniques transistor for RF amplifier and mixer an238 motorola amplifier mixer circuit high frequency mixer 2N2221A
d 331 TRANSISTOR equivalent

Abstract: RCA-40934 rca transistor rca 40934 RCA 40934 transistor 100 watt hf transistor 12 volt 7470 ic 300 watt hf transistor 12 volt VK20009-3B 40934
Text: N-P-N VHF/UHF Transistor 12.5-Volt Type For Class C Amplifier Applications Features: â , at 470 MHz RCA-40934* is an epitaxial silicon n-p-n planar transistor that features overlay , . COLLECTOR CURRENT: Continuous . TRANSISTOR DISSIPATION: At case temperatures up , €”Large-signal parallel equivalent input resistance vs. frequency. COLLECTOR SUPPLY VOLTAGE (Vcc)s'2 5 V CASE TEMPERATURE (TC)«25°C r4498RI Fig. 5—Large-signal parallel equivalent output


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PDF RCA-40934* d 331 TRANSISTOR equivalent RCA-40934 rca transistor rca 40934 RCA 40934 transistor 100 watt hf transistor 12 volt 7470 ic 300 watt hf transistor 12 volt VK20009-3B 40934
1994 - Using Linvill Techniques

Abstract: Y11E MM1941 AN238 power 2N2221A 2N3308 AN238 small signal transistor MOTOROLA NPN transistor 2n2221a RF Transistor Selection
Text: Transistor Mixer Design Using 2­Port Parameters Prepared by: Ernest Klein Applications Engineering , may be used to determine the potential stability of the transistor . The Linvill stability factor C , than 1, the transistor is unconditionally stable. If C is greater than 1, the transistor is , is with both input and output terminals of the transistor open circuited. With no external feedback, an unconditionally stable transistor will not oscillate under any combination of load and source


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PDF AN238/D AN238 Using Linvill Techniques Y11E MM1941 AN238 power 2N2221A 2N3308 AN238 small signal transistor MOTOROLA NPN transistor 2n2221a RF Transistor Selection
1999 - transistor x1

Abstract: SMD led spice model list of P channel power mosfet buz siemens motor starter wiring schematic infineon cool MOSFET dynamic characteristic test Siemens 3TH 80 siemens datenbuch Siemens 3th Siemens 3TH 20-22 siemens profet
Text: equivalent circuit diagrams is a description of the implementation of a dynamic temperature-dependent model , . Ignoring this effect can lead to an undesired ­ even catastrophic ­ turn-on of the transistor when it , cannot cool itself, this can be described formally by L and G The equation of =0 =0. an equivalent , ) heat conduction processes can therefore be modeled by a transmission line equivalent circuit diagram , Table 1: Corresponding physical variables Related to a power transistor , the heat path from the chip


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PDF com/products/36/36 115ff. BTS550P transistor x1 SMD led spice model list of P channel power mosfet buz siemens motor starter wiring schematic infineon cool MOSFET dynamic characteristic test Siemens 3TH 80 siemens datenbuch Siemens 3th Siemens 3TH 20-22 siemens profet
2001 - voltage divider rule

Abstract: voltage divider norton theorem SLOA074 SLOD006A "current divider rule" Mancini norton amplifier transistor circuit thevenin theorem
Text: the output resistor, the equivalent parallel value comprised of the output resistor and loading , simple series equivalent circuit, thus Thevenin's theorem simplifies the analysis. There are two , these terminals. The final step is to substitute the Thevenin equivalent circuit for the part you , 's Equivalent Circuit for Figure 2­7 The Thevenin equivalent circuit is a simple series circuit, thus further , VOUT (a) The Original Circuit VTH R3 X Y R4 VOUT (b) The Thevenin Equivalent


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PDF SLOA074 SLOD006A voltage divider rule voltage divider norton theorem SLOA074 SLOD006A "current divider rule" Mancini norton amplifier transistor circuit thevenin theorem
equivalent transistor rf "30 mhz"

Abstract: MRF392 NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor , MRF392 125 W, 30 to 500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON MAXIMUM , : 1. Each transistor chip measured separately. 2. Both transistor chips operating in push-pull amplifier. 0 + 28V C1, C2 — 240 pF, 100 Mil Chip Cap (ATC) or Equivalent C3 — 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent C4, C8 — 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent . C5, C6 — 20 pF


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PDF MRF392 equivalent transistor rf "30 mhz" NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola
1999 - MB3780A

Abstract: mb3780 MB3773 equivalent MB3773 MB3790 MB3771 3.3V replacement of MB3771 100MW MB3761 MB3771
Text: transistor at pin 7. In this case, the Figure 1.1-8 and Figure 1.1-14 circuits are equivalent . Figure , ) because the internal transistor at pin (2) shown in Figure 1.2-1 is off. This is equivalent to the Figure , equivalent circuit is given in Figure 1.2-5 . When the internal output transistor at pin (6) is turned on , . 49 Equivalent Circuits for MB3771 Input/output Unit , . 72 Equivalent Circuits for MB3773 Input/output Unit


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PDF AM41-10101-1E MB3780A mb3780 MB3773 equivalent MB3773 MB3790 MB3771 3.3V replacement of MB3771 100MW MB3761 MB3771
1999 - MB3780A

Abstract: mb3780 12v to 230v inverters circuit diagrams MB3790 MB3773 equivalent MB3771 3.3V MB3773 MB3771 MB3771 equivalent MB3761
Text: transistor at pin 7. In this case, the Figure 1.1-8 and Figure 1.1-14 circuits are equivalent . Figure , ) because the internal transistor at pin (2) shown in Figure 1.2-1 is off. This is equivalent to the Figure , equivalent circuit is given in Figure 1.2-5 . When the internal output transistor at pin (6) is turned on , . 49 Equivalent Circuits for MB3771 Input/output Unit , . 72 Equivalent Circuits for MB3773 Input/output Unit


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PDF AM41-10101-1E MB3780A mb3780 12v to 230v inverters circuit diagrams MB3790 MB3773 equivalent MB3771 3.3V MB3773 MB3771 MB3771 equivalent MB3761
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Pow er Transistor , RF POWER TRANSISTOR NPN SILICON < 2 6> j- 5,8> h !" < 1.4 < 3 _I The MRF392 , , VSWR = 30:1, all phase angles) NOTES: 1. Each transistor chip measured separately. 2. Both transistor , Degradation in Output Power C1, C2 - 240 pF, 100 Mil Chip Cap (ATC) or Equivalent C3 - 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent C4, C8 - 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent C5, C6 - 20 pF


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PDF MRF392
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor , BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON I_I The MRF392 is two transistors in a , phase angles) NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in , £! Semi-Rigid Coaxial Cable 86 Mil OD, 2 " L C1, C2 - 240 pF, 100 Mil Chip Cap (ATC) or Equivalent , Equivalent C4, C8 - 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent Z1 - Microstrip Line 270 Mil L x 125 Mil W


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PDF MRF392
1997 - 7447 BCD to Seven Segment display

Abstract: SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 7448 bcd to seven segment decoder 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7447 7-segment display 7447 BCD to Seven Segment display common cathode
Text: -If Figure 3. Circuits for TTL or transistor and darlington transistor Background V cc LED , Darlington Transistor TTL or Transistor The partitioning of these elements are dependent on the , . Therefore a darlington versus a single output transistor will have different current limiting resistor , . Open collector type driver with common anode display Data Input Vcc VCC 7448 or Equivalent , 7447 or equivalent Figure 7. Common anode display with driver Vcc Figure 9. Open collector


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PDF XR-2201 XR-2202 XR-2203 XR-2204 CA3081 CA3082 UAA180 LM3914 LM3915 7447 BCD to Seven Segment display SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 7448 bcd to seven segment decoder 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7447 7-segment display 7447 BCD to Seven Segment display common cathode
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