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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

equivalent transistor bj 131-6 Datasheets Context Search

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BJ 131-6

Abstract: BA356J 131-6 bj
Text: Equivalent Series Resistance (ESR) Environmental Parameter Vibration Immersion Shock Humidity Thermal Shock , tabs/high profile) UP22 BA 356 J VOLTAGE BA:500, BC:600, BG:800, BJ :900, BL:1000, BN:1200, BR


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PDF 3000VDC, 500VDC 3000VDC BJ 131-6 BA356J 131-6 bj
Not Available

Abstract: No abstract text available
Text: Equivalent Series Resistance (ESR) Environmental Parameter Vibration Immersion Shock Humidity Thermal Shock , tabs/high profile) UP22 BA 356 J VOLTAGE BA:500, BC:600, BG:800, BJ :900, BL:1000, BN:1200, BR


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PDF 3000VDC, 500VDC 3000VDC
TRANSISTOR BJ 121

Abstract: characteristical do transistor 2sd2553 2SD2553 2SC2482 2-16E3A
Text: TOSHIBA 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit in mm HIGH SPEED SWITCHING APPLICATIONS High , .) EQUIVALENT CIRCUIT COLLECTOR BASE 50 0 (Typ.) o EMITTER 961001EAA1 • TOSHIBA is continually working to , 0.1 0.3 1 3 COLLECTOR CURRENT IQ (A) 10 H O > O < H J O > BJ H H H H O > O < H J O > BJ H H H H O > O < H J O > BJ H H H 0 0.4 0.8 1.2 1.6 2.0 2.4 BASE CURRENT IB (A) VCE - IB


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PDF 2SD2553 TRANSISTOR BJ 121 characteristical do transistor 2sd2553 2SD2553 2SC2482 2-16E3A
GT8Q102

Abstract: No abstract text available
Text: TOSHIBA GT8Q102(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T , °C) PC 50 W Junction Temperature Tj 150 °C Storage Temperature Range Tstg -55-150 °C EQUIVALENT , VOLTAGE VQE (V) w u > o < H J O > BJ Kl H H 12 10 COMMON EMITTER Tc = - 40 , 0 2 4 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE V(jE (V) H U > M O < H J O > BJ H H H 12 , ) w u > w o < H J O > BJ Kl H H 1000 800 600 400 200 VCE, VGE - QG / > y CE


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PDF GT8Q102 2-10S2C
1997 - transistor 131-6

Abstract: MPS1907A
Text: U U PIN FUNCTIONS SW (Pin 5): Collector of NPN Power Transistor . Keep traces at this pin as , transistor Q1 is cycled on and off by the oscillator forcing current through the inductor to alternately , Resistor Note: DC Current is the Peak Switch Current if the Power Transistor had Zero Turn-Off Delay , occur due to turn-off delay of the power transistor . This turn-off delay is approximately 300ns. Peak , , current overshoot due to power transistor turn-off delay will be a significant portion of peak current


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PDF LT1316 500mA 300mV 200mA LT1307 600kHz LTC1440/1/2 LTC1516 LT1521 434-0507q transistor 131-6 MPS1907A
1997 - transistor 131-6

Abstract: MPS1907A MBR0540LT1 LQH3C220K04 131-6 transistor LT1316CS8 LT1316CMS8 LQH3C470 Sanyo OS-CON capacitors LTCD MARKING
Text: 100 1316 G10 LT1316 U U U PIN FUNCTIONS SW (Pin 5): Collector of NPN Power Transistor , limited to 6.3µs. Power transistor Q1 is cycled on and off by the oscillator forcing current through the , Note: DC Current is the Peak Switch Current if the Power Transistor had Zero Turn-Off Delay LT1316 , due to turn-off delay of the power transistor . This turn-off delay is approximately 300ns. Peak , levels, current overshoot due to power transistor turn-off delay will be a significant portion of peak


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PDF LT1316 500mA 300mV 500mA LT1304 200mA LT1307 600kHz LTC1440/1/2 LTC1516 transistor 131-6 MPS1907A MBR0540LT1 LQH3C220K04 131-6 transistor LT1316CS8 LT1316CMS8 LQH3C470 Sanyo OS-CON capacitors LTCD MARKING
TRANSISTOR BJ 003

Abstract: MG150J1JS50 60A4
Text: .) (IC = 150A) EQUIVALENT CIRCUIT EI/C2 Ci o- o Ó Gì Ex -0E2 Unit in mm 3-M5 2 , €” 0.08 0.15 /us Thermal Resistance Rth (j-c) Transistor Stage — — 0.16 °C/W Diode Stage — â , 320 < O 240 Ic - VCE 63 o > w Ü < H J O > BJ H H H W U > M O < H J O > BJ H e 160 , (V) £ < in w 55 H & 33 e H jb S w £ < BJ 0.03 400 < £ 300 200 100 10 10 1 PULSE


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PDF MG150J1JS50 150J1JS50 VCEVQE--10V TRANSISTOR BJ 003 MG150J1JS50 60A4
TOSHIBA MG300J2YS50

Abstract: L20A MG300J2YS50 TRANSISTOR BJ 040
Text: 300A) EQUIVALENT CIRCUIT E2 El o ci<> rn 1 I 1 Gi El/C2 G2 n l OE2 Unit in mm 3-M5 4 , 400A/ jus — 0.08 0.15 /us Thermal Resistance Rth O'-c) Transistor Stage — — 0.096 °C/W , (V) (H U > W o < H J O > BJ H H H 640 480 320 160 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE , ) 20 (H O > M O < H J o > ai H H H W U > M O < H J O > BJ H e 16 12 vce - vge 16 , J O > BJ H H H 400 300 200 100 COMMON EMITTER RL = lfì Tc = 25°C VCE =ov


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PDF MG300J2YS50 300J2 2-109C1A TOSHIBA MG300J2YS50 L20A MG300J2YS50 TRANSISTOR BJ 040
2SD2092

Abstract: 2SD2092 equivalent
Text: TOSHIBA 2SD2092 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S D 2 0 9 2 SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS • High DC Current Gain : hpg (i) = 500~1500 • Low Collector Saturation Voltage : VeE(sat) = 0-3V (Max.) MAXIMUM RATINGS (Ta = 25°C) Unit in mm , 1.1 2.5410.25 1 2 3 —r^- Ms 1. BASE 2. COLLECTOR 3. EMITTER JEDEC EIAJ SC-67 EQUIVALENT , 63 O > w o < H J O > BJ H H H fej O > w o < H J O > BJ H H H 1.2 1.0 0.6 0.4 0.2


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PDF 2SD2092 2SD2092 2SD2092 equivalent
TRANSISTOR BJ 033

Abstract: 2-21F1C GT25Q301
Text: TOSHIBA GT25Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 , SINK) 3. EMITTER JEDEC — EIAJ — TOSHIBA 2-21F1C Weight : 9.75 g EQUIVALENT CIRCUIT O , VCE (V) 63 o > w o < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = — 40 , VOLTAGE V(jE (V) 20 H O > O < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = 125 , (V) H O > M O < H J O > BJ H H H 1000 800 600 400 200 VCE, VGE - QG COMMON EMITTER RL


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PDF GT25Q301 TRANSISTOR BJ 033 2-21F1C GT25Q301
SARS diode

Abstract: IR sensor using LM385
Text: ADC0833CJ, CCJ Minimum Total Ladder Resistance (Note 9) ADC0833BCJ/CCJ/ BJ /CJ ADC0833BCN/CCN Maximum Total Ladder Resistance (Note 9) ADC0833BCJ/CCJ/ BJ /CJ ADC0833BCN/CCN Minimum Common-Mode Input Range (Note 10) ADC0833BCJ /CCJ / BJ /CJ ADC0833BCN /CCN Maximum Common-Mode Input Range (Note 10) ADC0833BCJ/CCJ/ BJ /CJ ADC0833BCN/CCN DC Common-Mode Error ADC0833BCJ/CCJ/ BJ /CJ ADC0833BCN/CCN Change In Zero Error From V c c = 5V To Internal Zener Operation (Note 3) ADC0833BCJ/CCJ/ BJ /CJ ADC0833BCN/CCN 15mA Into V + VCC = N.C. V


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PDF ADC0833 ADC0833 ADC0833BCJ ADC0833BCN ADC0833BJ ADC0833CCJ ADC0833CCN ADC0833CJ SARS diode IR sensor using LM385
TRANSISTOR BJ 042

Abstract: No abstract text available
Text: MEDIUM VOLTAGE, MEDIUM POWER CHIP NUM BER c 'l c rfl ©ÄTTÄIL©( -Jolitron Devices. Inc. NPN EPI BASE POWER TRANSISTOR CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrom e Nickel Silver" also available) Also av ailab le on: MOLY PEDESTAL , finished component employing the chip number 111 in a TO-3 or equivalent case : V CEO > 60V >80V V cE (s , DEVICE TYPES: 2N3716, 2N5303, 2N5881, 2N5882 S bJ E (ST) Z v § i_ ^ o s


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PDF 37mra) 305mm) 300pF 300pF 2N3716, 2N5303, 2N5881, 2N5882 TRANSISTOR BJ 042
GT15Q311

Abstract: No abstract text available
Text: TOSHIBA GT15Q311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q311 , JEDEC EIAJ TOSHIBA 2-16H1A Weight : 3.65 g EQUIVALENT CIRCUIT O Collector Gate £ o Emitter 1 , 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 63 o > w o < H J O > BJ H H H 20 16 12 COMMON , VOLTAGE V(jE (V) H O > w o < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = 125 , 10 30 100 300 1000 3000 COLLECTOR-EMITTER VOLTAGE VQE (V) H O > w o < H J O > BJ H H H 1000


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PDF GT15Q311 GT15Q311
2sd2092

Abstract: 2sd209
Text: TOSHIBA 2SD2092 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S D 2 0 9 2 SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS • High DC Current Gain : hFE (1) = 500-1500 • Low Collector Saturation Voltage : VCE (sat) = 0-3V (Max.) MAXIMUM RATINGS (Ta = 25°C) Unit in mm , –¡ 1. BASE 2. COLLECTOR 3. EMITTER JEDEC EIAJ SC-67 EQUIVALENT CIRCUIT BASE o- TOSHIBA 2-10R1A , H O > w o < H J O > BJ H H H H O > O < H J O > BJ H H H 1.2 1.0 0.6 0.4 0.2 I I


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PDF 2SD2092 2sd2092 2sd209
GT10Q301

Abstract: IC204
Text: TOSHIBA GT10Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10Q301 , EQUIVALENT CIRCUIT o Collector Gate o—Ik o Emitter 1 2002-02-06 TOSHIBA GT10Q301 ELECTRICAL , COLLECTOR-EMITTER VOLTAGE VCE (V) 63 o > w o < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = — 40 , H O > O < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = 125 , o < H J O > BJ H H H 1000 800 600 400 200 VQE, VGE - QG COMMON EMITTER RL = 60 Q, Tc =


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PDF GT10Q301 GT10Q301 IC204
TRANSISTOR BJ 033

Abstract: GT25Q301
Text: TOSHIBA GT25Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 , SINK) 3. EMITTER JEDEC — JEITA — TOSHIBA 2-21F1C Weight : 9.75 g EQUIVALENT CIRCUIT O , VCE (V) 63 o > w o < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = — 40 , VOLTAGE V(jE (V) 20 H O > O < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = 125 , (V) H O > M O < H J O > BJ H H H 1000 800 600 400 200 VCE, VGE - QG COMMON EMITTER RL


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PDF GT25Q301 TRANSISTOR BJ 033 GT25Q301
GT10Q301

Abstract: No abstract text available
Text: TOSHIBA GT10Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10Q301 , EQUIVALENT CIRCUIT o Collector Gate o—Ik o Emitter 1 2001-05-24 TOSHIBA GT10Q301 ELECTRICAL , COLLECTOR-EMITTER VOLTAGE VCE (V) 63 o > w o < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = — 40 , H O > O < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = 125 , o < H J O > BJ H H H 1000 800 600 400 200 VQE, VGE - QG COMMON EMITTER RL = 60 Q, Tc =


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PDF GT10Q301 GT10Q301
GT10Q301

Abstract: No abstract text available
Text: TOSHIBA GT10Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10Q301 , EQUIVALENT CIRCUIT o Collector Gate o—IkJ o Emitter 961001EAA1 • TOSHIBA is continually working to , VQE 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 63 o > w o < H J O > BJ H H H 20 16 12 , H O > O < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = 125 , o < H J O > BJ H H H 1000 800 600 400 200 VQE, VGE - QG COMMON EMITTER RL = 60 Q, Tc =


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PDF GT10Q301 GT10Q301
TRANSISTOR BJ 003

Abstract: 2-10R1C GT5J301
Text: TOSHIBA GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 , EQUIVALENT CIRCUIT Collector Gate Emitter 961001EAA1 • TOSHIBA is continually working to improve the , VQE (V) H O > w o < H J O > BJ H H H 20 16 12 VCE - VGE COMMON EMITTER Tc = — 40 , J O > BJ H H H 20 16 12 COMMON EMITTER Tc = 125 , J O > BJ H H H 500 400 300 200 100 vce, vge - Qg < o COMMON EMITTER RL = 60Î1 Tc = 25Â


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PDF GT5J301 TRANSISTOR BJ 003 2-10R1C GT5J301
GT15Q311

Abstract: No abstract text available
Text: TOSHIBA GT15Q311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q311 , JEDEC JEITA TOSHIBA 2-16H1A Weight : 3.65 g EQUIVALENT CIRCUIT O Collector Gate £ o Emitter 1 , 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 63 o > w o < H J O > BJ H H H 20 16 12 COMMON , VOLTAGE V(jE (V) H O > w o < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = 125 , 1 3 10 30 100 300 1000 COLLECTOR-EMITTER VOLTAGE VQE (V) H O > M O < H J O > BJ H H H 1000


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PDF GT15Q311 GT15Q311
GT15Q301

Abstract: No abstract text available
Text: TOSHIBA GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 , Weight : 4.6 g EQUIVALENT CIRCUIT Gate O Collector ö Emitter 961001EAA1 • TOSHIBA is continually , J O > BJ H H H 20 16 12 COMMON EMITTER Tc = — 40 , VOLTAGE VQE (V) H O > O < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = 125 , 300 1000 3000 H O > M O < H J O > BJ H H H 1000 800 600 400 200 vce, vge - Qg < o 100


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PDF GT15Q301 GT15Q301
2-10R1C

Abstract: GT10J303
Text: TOSHIBA GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement-Mode , 2.5410.25 1 2 3 —r^- Ms 1. GATE 2. COLLECTOR 3. EMITTER JEDEC EIAJ TOSHIBA 2-10R1C EQUIVALENT , VQE (V) H O > w o < H J O > BJ H H H H U > M O < H J O > bj H H H 20 16 12 VCE - , TEMPERATURE. COLLECTOR-EMITTER VOLTAGE VGE (V) H O > M O < h J O > BJ H h h 500 400 300 200 100


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PDF GT10J303 100fl 2-10R1C GT10J303
2sd2092

Abstract: 2SD2092 equivalent
Text: TOSHIBA 2SD2092 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S D 2 0 9 2 SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS • High DC Current Gain : hFE (1) = 500-1500 • Low Collector Saturation Voltage : VCE (sat) = 0-3V (Max.) MAXIMUM RATINGS (Tc = 25°C) Unit in mm , –¡ 1. BASE 2. COLLECTOR 3. EMITTER JEDEC JEITA SC-67 TOSHIBA 2-10R1A EQUIVALENT CIRCUIT BASE o , H O > w o < H J O > BJ H H H H O > O < H J O > BJ H H H 1.2 1.0 0.6 0.4 0.2 I I


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PDF 2SD2092 2sd2092 2SD2092 equivalent
TRANSISTOR BJ 033

Abstract: GT25Q301
Text: TOSHIBA GT25Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 , SINK) 3. EMITTER JEDEC — EIAJ — TOSHIBA 2-21F1C Weight : 9.75 g EQUIVALENT CIRCUIT O , 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 63 o > w o < H J O > BJ H H H 20 16 12 , VOLTAGE V(jE (V) 20 H O > O < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = 125 , (V) H O > M O < H J O > BJ H H H 1000 800 600 400 200 VCE, VGE - QG COMMON EMITTER RL


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PDF GT25Q301 TRANSISTOR BJ 033 GT25Q301
GT15Q311

Abstract: EM510
Text: TOSHIBA GT15Q311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q311 , SINK) 3. EMITTER JEDEC EIAJ TOSHIBA 2-16H1A Weight : 3.65 g EQUIVALENT CIRCUIT O Collector Gate , 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 63 o > w o < H J O > BJ H H H 20 16 12 COMMON , VOLTAGE V(jE (V) H O > w o < H J O > BJ H H H 20 16 12 COMMON EMITTER Tc = 125 , 10 30 100 300 1000 3000 COLLECTOR-EMITTER VOLTAGE VQE (V) H O > w o < H J O > BJ H H H 1000


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PDF GT15Q311 GT15Q311 EM510
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