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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

equivalent transistor TO 2sk146 Datasheets Context Search

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1993 - transistor equivalent table chart

Abstract: 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
Text: equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was , term "large-signal input impedance" and "large signal output impedance" refer to the actual transistor , amplifier provide a conjugate match to the transistor , such that the input and output impedances of the , has sufficient loaded Q to produce a sine wave voltage regardless of transistor conduction angle. 3


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PDF AN282A/D AN282A mid-1960 transistor equivalent table chart 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
1998 - Philips high frequency bipolar transistor with Ft

Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
Text: power amplifier fundamentals 1.1.3 Transmitting transistor design width'). And, an equivalent to , to introduce a basic equivalent circuit of a bipolar RF transmitting transistor , and a few simple , A transmitting transistor has to deliver high power at high frequency (>1 MHz). This means that a , layer grown on the silicon substrate to form the different transistor regions. The main process steps , thickness being a compromise between the transistor 's RF performance and its ability to withstand certain


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PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
1993 - motorola rf Power Transistor

Abstract: transistor equivalent table chart 2N6256 AN282A AN548A transistor equivalent table 2N5849 motorola 2N3948 transistor for RF amplifier 2N5849
Text: equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was , impedance" and "large signal output impedance" refer to the actual transistor terminal impedances when , match to the transistor , such that the input and output impedances of the amplifier are 50 + j 0 ohms , measured at low signal levels with Class A bias and the transistor (or IC) connected directly to a short


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PDF AN282A/D AN282A mid-1960 motorola rf Power Transistor transistor equivalent table chart 2N6256 AN282A AN548A transistor equivalent table 2N5849 motorola 2N3948 transistor for RF amplifier 2N5849
2N5995

Abstract: transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
Text: Overlay Transistor For 12.5-Volt Applications in VHF Communications Equipment Features: â , BREAKDOWN VOLTAGE: With base connected to emitter . . . With base open. • V(BR)CES ■v(BR)CEO , . ■ic 1.5 A •TRANSISTOR DISSIPATION: At case temperatures up to 75°C ■. At case temperatures above 75°C . . PT 10.7 See Fig. W 9 * TEMPERATURE RANGE: Storage & Operating (Junction) . . -65 to , n-p-n planar transistor featuring overlay emitter-electrode construction. This type features a hermetic


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PDF 2N5995 175-MHz 92SS-3763R3 2N5995 transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
h1208

Abstract: equivalent transistor c 495 92CS-223S5 radiosonde TA8340 NYTRONICS choke Nytronics relay 92CM-22389 transistor C4 168 H-1208
Text: RFC: choke, 0.12 ¿iH, Nytronics or equivalent L: 0.150-in. (3.8 mm) transistor lead length R1: 0.82 , File No. 679 RF Power Transistors Solid State Division 41038 r RCA -, I TO -46 H-1208 750-mW, 1.68-GHz Oscillator Transistor Features: ■Emitter-ballasting resistors ■750-rnW oscillator power at 1.68 GHz (20 V) ■Collector connected to case ■For coaxial, stripline, and lumped-element circuits Type 41038* is an epitaxial silicon n-p-n planar transistor with overlay


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PDF H-1208 750-mW, 68-GHz 750-rnW TA8340. h1208 equivalent transistor c 495 92CS-223S5 radiosonde TA8340 NYTRONICS choke Nytronics relay 92CM-22389 transistor C4 168 H-1208
1994 - motorola transistor

Abstract: Using Linvill Techniques for R. F. Amplifiers 2N2221 MM1941 an238 motorola Using Linvill Techniques transistor for RF amplifier and mixer 2N3308 AN238 RF Transistor Selection
Text: oscillations will occur. The C factor is used to determine the potential stability of the transistor , but it , account finite source and load admittances connected to the transistor . The expression for k is: k , matching techniques of both the input and output of the transistor to the respective Networks. The basic , network shown in Figure 3, Yin represents the input admittance of the transistor and is equal to the , admittance of the transistor and is equal to the small signal common emitter output admittance y22e at the


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PDF AN238/D AN238 motorola transistor Using Linvill Techniques for R. F. Amplifiers 2N2221 MM1941 an238 motorola Using Linvill Techniques transistor for RF amplifier and mixer 2N3308 AN238 RF Transistor Selection
1994 - Y11E

Abstract: Using Linvill Techniques MM1941 transistor for RF amplifier and mixer small signal transistor MOTOROLA RF Transistor Selection NPN transistor 2n2221a AN238 power AN238 2N3308
Text: may be used to determine the potential stability of the transistor . The Linvill stability factor C , oscillations will occur. The C factor is used to determine the potential stability of the transistor , but it , account finite source and load admittances connected to the transistor . The expression for k is: k , output of the transistor to the respective Networks. The basic mixer circuit can be explained in terms , the transistor and is equal to the small signal common emitter input admittance y11e at the input


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PDF AN238/D AN238 Y11E Using Linvill Techniques MM1941 transistor for RF amplifier and mixer small signal transistor MOTOROLA RF Transistor Selection NPN transistor 2n2221a AN238 power AN238 2N3308
1999 - transistor x1

Abstract: SMD led spice model list of P channel power mosfet buz siemens motor starter wiring schematic infineon cool MOSFET dynamic characteristic test siemens datenbuch Siemens 3TH 80 Siemens 3TH 20-22 siemens profet datenbuch
Text: . Ignoring this effect can lead to an undesired ­ even catastrophic ­ turn-on of the transistor when it , Table 1: Corresponding physical variables Related to a power transistor , the heat path from the chip , to combine single volume elements in lumped equivalent elements (Rth, Cth). Due to the close , on the voltage class of the transistor in addition to the active chip area. The area with , simulator, it is necessary to find an electrical equivalent network whose step response describes the


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PDF com/products/36/36 115ff. BTS550P transistor x1 SMD led spice model list of P channel power mosfet buz siemens motor starter wiring schematic infineon cool MOSFET dynamic characteristic test siemens datenbuch Siemens 3TH 80 Siemens 3TH 20-22 siemens profet datenbuch
56-590-65/4A

Abstract: ferroxcube 56-590-65/4a rca 632 Arco 423 arco 404 2N5996 i7356 RCA Power Transistor 4 225 VK20009-3B
Text: -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N Device for 12.5-Volt Applications in VHF Communications , connected to emitter.V(BR)CES ^ With base open.V(BR}CEO 18 V »EMITTER-TO-BASE , case temperatures up to 75°C . 35.7 W At case temperatures above 75°C . See Fig. 9 * TEMPERATURE RANGE: Storage & Operating (Junction) . -65 to +200 °C ♦CASE TEMPERATURE (During soldering , JS-6 RDF-3/JS-9 RDF-7. RCA type 2N59963 is an epitaxial silicon n-p-n planar transistor featuring


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PDF 2N5996 175-MHz 15-watt COLLECTOR50 V61R3 2N5996 56-590-65/4A ferroxcube 56-590-65/4a rca 632 Arco 423 arco 404 i7356 RCA Power Transistor 4 225 VK20009-3B
d 331 TRANSISTOR equivalent

Abstract: RCA-40934 rca transistor RCA 40934 transistor rca 40934 100 watt hf transistor 12 volt 7470 ic 300 watt hf transistor 12 volt VK20009-3B TO216
Text: N-P-N VHF/UHF Transistor 12.5-Volt Type For Class C Amplifier Applications Features: â , at 470 MHz RCA-40934* is an epitaxial silicon n-p-n planar transistor that features overlay , circuits. •Formerly RCA Dev. No.TA7941. RCA HF-31 Package ("Studless TO -216 AA") Type 40934 is electrically identical to the RCA-2N5914, but employs a "studless TO -216AA" package. MAXIMUM RATINGS , base connected to emitter. With base open. EMITTER-TO-BASE VOLTAGE


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PDF RCA-40934* d 331 TRANSISTOR equivalent RCA-40934 rca transistor RCA 40934 transistor rca 40934 100 watt hf transistor 12 volt 7470 ic 300 watt hf transistor 12 volt VK20009-3B TO216
2001 - voltage divider rule

Abstract: norton theorem voltage divider "current divider rule" SLOD006A SLOA074 norton amplifier transistor circuit thevenin theorem Mancini
Text: these terminals. The final step is to substitute the Thevenin equivalent circuit for the part you , three replaces the circuit to the left of X-Y with the Thevenin equivalent circuit VTH and RTH. R TH , (Equation 2­26) when the transistor is off, because it has to be small enough to allow the output current , volts (Equation 2­27). When the transistor is on, the base resistor must be sized (Equation 2­28) to enable the input signal to drive enough base current into the transistor to saturate it. The transistor


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PDF SLOA074 SLOD006A voltage divider rule norton theorem voltage divider "current divider rule" SLOD006A SLOA074 norton amplifier transistor circuit thevenin theorem Mancini
Narda 904N

Abstract: transistor et 455 sealectro AN3764 equivalent transistor rf 2N5470 TA7003 Narda Microwave narda rf 0/Narda 904N
Text: TRANSISTOR DISSIPATION:.PT At case temperatures up to 25 °C . 3.5 W At case temperatures above , SILICON N-P-N "overlay" TRANSISTOR - T JEDEC TO -215AA For UHF/Microwave Power Amplifiers, Microwave , silicon n-p-n planar transistor employing the overlay emitter-electrode construction. It is intended for , operation in the common-base amplifier configuration. This transistor can be used in both large and , 2N5470 Power Transistor ," by G. Hodowanec, O.P. Hart, and H.C. Lee. »Formerly RCA Dev. Type No. TA7003


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PDF 2N5470 RCA-2N5470* 2N5470 2N5470, AN3764, 16-Detail Narda 904N transistor et 455 sealectro AN3764 equivalent transistor rf TA7003 Narda Microwave narda rf 0/Narda 904N
1999 - MB3780A

Abstract: MB3773 equivalent mb3780 replacement of MB3771 MB3790 MB3773 MB3771 3.3V MB3793 MB3793-42 MB3771
Text: ) because the internal transistor at pin (2) shown in Figure 1.2-1 is off. This is equivalent to the Figure , capacitor to the terminal VOUT) 92 Figure 4.11-2 Equivalent circuit [2] (for implementing a backup by , ] . 93 Figure 4.12-1 Equivalent circuit (for charging the secondary battery to more than 3V , delay time) . 95 Figure 4.14-1 Equivalent circuit [1] (for connecting a diode to the , no diode connected to the terminal VOUT for power protection) 96 Figure 4.14-3 Equivalent


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PDF AM41-10101-1E MB3780A MB3773 equivalent mb3780 replacement of MB3771 MB3790 MB3773 MB3771 3.3V MB3793 MB3793-42 MB3771
1999 - MB3780A

Abstract: mb3780 MB3790 MB3773 equivalent 12v to 230v inverters circuit diagrams MB3771 3.3V MB3773 MB3771 MB3771 equivalent 100MW
Text: ) because the internal transistor at pin (2) shown in Figure 1.2-1 is off. This is equivalent to the Figure , capacitor to the terminal VOUT) 92 Figure 4.11-2 Equivalent circuit [2] (for implementing a backup by , ] . 93 Figure 4.12-1 Equivalent circuit (for charging the secondary battery to more than 3V , delay time) . 95 Figure 4.14-1 Equivalent circuit [1] (for connecting a diode to the , no diode connected to the terminal VOUT for power protection) 96 Figure 4.14-3 Equivalent


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PDF AM41-10101-1E MB3780A mb3780 MB3790 MB3773 equivalent 12v to 230v inverters circuit diagrams MB3771 3.3V MB3773 MB3771 MB3771 equivalent 100MW
equivalent transistor rf "30 mhz"

Abstract: MRF392 NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola
Text: MRF392 125 W, 30 to 500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON MAXIMUM , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor Designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz , to +150 °C Junction Temperature Tj 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R9JC 0.65 °C/W NOTE: 1. This device is designed for RF operation


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PDF MRF392 equivalent transistor rf "30 mhz" NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Pow er Transistor , to 500 MHz frequency range. · Specified 28 Volt, 400 MHz Characteristics - O utput Pow er = 125 W , Tactical Marketing in Phoenix, AZ. · · · · · 125 W, 30 to 500 MHz CONTROLLED " Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON < 2 6> j- 5,8> h !" < 1.4 < 3 _I The MRF392 , CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Rejc Max 0.65 Unit °C/W NOTE: 1


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PDF MRF392
2000 - SLOA025

Abstract: sloa025a voltage divider rule
Text: is to substitute the Thevenin equivalent circuit for the part you wanted to replace as shown in , to the left of X-Y with the Thevenin equivalent circuit VTH and RTH. R TH R + RR) R 1 (14 , without pulling the collector or output voltage to less than ten volts. When the transistor is on, the , transistor to saturate it. The transistor beta is 50. IC 8 ) + bI + V) R* V ) I [ VR ) I 12 B , voltage dropped across RC to keep the transistor on. Set the collector-emitter voltage at 4 V; when the


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PDF SLOA025A SLOA025 voltage divider rule
2000 - voltage divider rule

Abstract: sloa025a "current divider rule" SLOA025
Text: is to substitute the Thevenin equivalent circuit for the part you wanted to replace as shown in , to the left of X-Y with the Thevenin equivalent circuit VTH and RTH. R TH R + RR) R 1 (14 , without pulling the collector or output voltage to less than ten volts. When the transistor is on, the , transistor to saturate it. The transistor beta is 50. IC 8 ) + bI + V) R* V ) I [ VR ) I 12 B , voltage dropped across RC to keep the transistor on. Set the collector-emitter voltage at 4 V; when the


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PDF SLOA025A voltage divider rule "current divider rule" SLOA025
1997 - 7447 BCD to Seven Segment display

Abstract: SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 7448 bcd to seven segment decoder 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7447 7-segment display 7447 BCD to Seven Segment display common cathode
Text: application note is to provide some information on the integrated circuits presently available to drive Light Emitting Diodes (LED) displays and how to interface them to the various displays. For circuits using , -If Figure 3. Circuits for TTL or transistor and darlington transistor Background V cc LED displays come in various sizes (0.1" to 0.8"), colors (red, high-efficiency red, green, yellow and blue , ). The brightness is essentially proportional to the current through an LED and each element within


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PDF XR-2201 XR-2202 XR-2203 XR-2204 CA3081 CA3082 UAA180 LM3914 LM3915 7447 BCD to Seven Segment display SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 7448 bcd to seven segment decoder 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7447 7-segment display 7447 BCD to Seven Segment display common cathode
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor D esigned prim arily for w ideband la rg e-sig nal output and driver am plifier stages in the 30 to , Tactical Marketing in Phoenix, AZ. I-1 · · · · · 125 W, 30 to 500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON I_I The MRF392 is two transistors in a , , Junction to Case Symbol Rojc Max 0.65 Unit cC/W Symbol V CEO VcBO V EBO >C Value 30 60 4.0 16 270 1.54


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PDF MRF392
2009 - Not Available

Abstract: No abstract text available
Text: transistor Product data sheet 2001 Dec 13 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN QUICK REFERENCE DATA FEATURES • 600 mW total power , €¢ Improved device reliability due to reduced heat generation ICM peak collector current 2 A , equivalent on-resistance <500 mΩ PINNING PIN APPLICATIONS DESCRIPTION 1, 4 • Supply , 4 DESCRIPTION TR2 NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package


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PDF M3D302 PBSS4140DPN 613514/01/pp11
2009 - PBSS4140DPN

Abstract: SC74 SOT457 MARKING CODE M2
Text: NPN/PNP transistor Product data sheet 2001 Dec 13 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor FEATURES PBSS4140DPN QUICK REFERENCE DATA · 600 mW total , device reliability due to reduced heat generation ICM peak collector current 2 A · , - - RCEsat equivalent on-resistance <500 m · High current capability · Reduces , 4 DESCRIPTION TR2 NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package


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PDF M3D302 PBSS4140DPN 613514/01/pp11 PBSS4140DPN SC74 SOT457 MARKING CODE M2
1997 - static characteristics of mosfet and igbt

Abstract: IGBT tail time 2A mosfet igbt driver stage mosfet, igbt, transistor driver igbt SIEMENS Semiconductor Group igbt main disadvantages of mosfet comparison of IGBT and MOSFET SIEMENS thyristor transistor igbt
Text: order to achieve minimum losses in the on state, the n-area (as with the saturated bipolar transistor , commutating inductive load currents from the freewheeling circuit to the transistor being turned on (dv/dt , to the transistor , parasitic dielectric current occurs at the transistor input due to the feedback , Conductivity-Modulated FETs-IGBT Up to a reverse voltage of VDS 200 V, power MOSFETs are superior in all respects to any other switching devices components. With a supply voltage of VB > 200 V, the


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2007 - SSTL18I

Abstract: FF1136 thevenin hyperlynx XAPP863 UG199 UG190 ML561 ML461 magic eye
Text: the lower transistor into ground, discharging the capacitor to voltage V1 at time t = T, at which , interest to give the total energy dissipated by the upper transistor during the charging phase of the , because the transistor 's on resistance is unknown and is not constant. To determine the current flowing , , the current flowing through the upper totem pole transistor adds to the current flowing through the , the FPGA. There are three main reasons to use the Thevenin equivalent termination style: ·


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PDF XAPP863 org/download/search/JESD8-15a UG190, com/bvdocs/userguides/ug190 UG079, ML461 com/bvdocs/userguides/ug079 UG199, ML561 com/bvdocs/userguides/ug199 SSTL18I FF1136 thevenin hyperlynx XAPP863 UG199 UG190 magic eye
equivalent transistor n 4212

Abstract: Indiana general ferrite core 2N5071 CF-108-Q2 arco 427 TA2827 CF-111 ferrite core TRANSISTOR J 4310 EQUIVALENT indiana general CF-111
Text: . IB " TRANSISTOR DISSIPATION: P-p At case temperatures up to 25°C . At case , transistor socket r (Zl-50H) 92CS — I9I62 Fi(i.8 ~ Wideband rf amplifier circuit (30- to -76 MHz). , -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N Device for 24-Volt Applications in VHF Communications Equipment Features: ■For class B or class C amplifiers ■For 24-V FM (30 to 76 MHz) communications ■24 W , silicon n-p-n planar transistor featuring overlay emitter electrode construction. This device utilizes


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PDF 2N5071 76-MHz 24-Volt 2N50713 equivalent transistor n 4212 Indiana general ferrite core 2N5071 CF-108-Q2 arco 427 TA2827 CF-111 ferrite core TRANSISTOR J 4310 EQUIVALENT indiana general CF-111
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