The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
CCR0512FPKITZ01A GE Critical Power COOLING PLATE FOR CCR0512
UPS12438 GE Critical Power BATTERY CABINET FOR LP11U
J2014001L901 GE Critical Power BACKPLANE FOR GP100 RECTIFIERS
UPS12434 GE Critical Power BATTERY CABINET FOR LP11U
150048758 GE Critical Power INTERFACE CARD FOR SLP0712TE
CCR0512FP INTERFACE CARD GE Critical Power EVAL CARD FOR CCR0512FP

equivalent for transistor tt 2222 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - TRANSISTOR ML6

Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor resistor MR25 ZO 103 MA 75 533 MR25 resistor Miniature Ceramic Plate Capacitors 2222 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product , specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING · High power gain PIN DESCRIPTION · Emitter-ballasting resistors for good thermal stability 1 collector · Gold , DESCRIPTION Silicon NPN transistor mounted in a 4-lead dual-emitter SOT172A1. envelope with a ceramic cap. All leads are isolated from the mounting base. 2 Top view It is primarily intended for use in


Original
PDF BFQ270 OT172A1. TRANSISTOR ML6 TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor resistor MR25 ZO 103 MA 75 533 MR25 resistor Miniature Ceramic Plate Capacitors 2222 philips
TRANSISTOR ML6

Abstract: No abstract text available
Text: wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T > PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold , emitter 4 t s \ , 3 ) 1. . DESCRIPTION Silicon NPN transistor mounted in a , base. 2 M C6 B 89 Top view F ig ,1 S O T 1 7 2 A 1 . It is primarily intended for use , ^31 0031773 10b H A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor


OCR Scan
PDF bb53T31 BFQ270 OT172A1 TRANSISTOR ML6
1997 - Philips Capacitor

Abstract: transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent
Text: DIMENSIONS TR1 bias transistor , BC548 or equivalent note 1 C1, C4, C7 capacitor; notes 2 and 3 , TR1 bias transistor , BC548 or equivalent note 1 C1, C6, C7, C8 capacitor; notes 2 and 3 , DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification , specification UHF power transistor BFG10W/X FEATURES DESCRIPTION · High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. · Small


Original
PDF BFG10W/X OT343 Philips Capacitor transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent
1997 - ic1 555

Abstract: ic2 555 ZTX850 ZTX950 DATASHEET OF IC 555 790A ZSD100 555 timer astable multivibrator Piezo Transducers voltage controlled oscillator using ic 555
Text: other systems may use discrete transistor circuits, op-amp derived circuits or even small mi , transients generated by the inductive load, and base emitter resistors to provide a path for any transistor leakage current. This factor is particularly important with usual TO126/TO220 products as their , CMOD GND MPS 2222 Q SPEAKER MPS 2222 Q COUT 330 CMOD 6 330 SAW ZTX 690B ZTX 690B COUT 0V Figure 2 Zetex Equivalent Minimum Component Count Solution. AN16 -


Original
PDF ZSD100 ZSD100 ic1 555 ic2 555 ZTX850 ZTX950 DATASHEET OF IC 555 790A 555 timer astable multivibrator Piezo Transducers voltage controlled oscillator using ic 555
1998 - philips ferroxcube 4c6

Abstract: ferroxcube toroid philips toroid 4c6 Philips Components, Soft Ferrites Data Handbook M ferroxcube 4C6 toroid core ferroxcube 31 toroid core BLF175 4C6 toroid Magnetic Products, Soft Ferrites, Data Handbook M soft ferrites philips handbook
Text: compensates the output capacitance of the transistor for the frequency range of interest in order to provide , allowable power dissipation in the transistor . For a maximum operating junction temperature of 200 °C and a , Fig.2. All transistor package parasitics are neglected for this frequency range. RF handbook , transistor MGM368 Fig.2 Small signal equivalent circuit of amplifier. 1998 Mar 23 4 Philips , presented, with the MOS-transistor BLF175, for the frequency range 1.6 - 28 MHz. The transistor is adjusted


Original
PDF BLF175 NCO8705 SCA57 philips ferroxcube 4c6 ferroxcube toroid philips toroid 4c6 Philips Components, Soft Ferrites Data Handbook M ferroxcube 4C6 toroid core ferroxcube 31 toroid core BLF175 4C6 toroid Magnetic Products, Soft Ferrites, Data Handbook M soft ferrites philips handbook
Not Available

Abstract: No abstract text available
Text: TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for , PHILIPS/DISCRETE bbSBTBl DQEfifibM 517 « A P X BLU60/28 b'lE » UHF power transistor , - T h = 70 °C Fig.7 Load power as a function of drive power; typical values. Conditions for Figs , UHF power transistor J V Ruggedness in class-B operation The BLU60/28 is capable of


OCR Scan
PDF bbS3R31 002flflb2 BLU60/28 BLU60/28 OT119) bbS3T31 nt44i MCA440 MCA439
MCA443

Abstract: 70cN
Text: TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for , By Its Respective Manufacturer N AUER PHILIPS/DISCRETE UHF power transistor b'IE D bbSBIBl , . Conditions for Figs 5 to 7 Class-B operation; Vqe = 28 V; f = 470 MHz; Rth mb_h = 0.2 K/W. s 218 August , power transistor ^(□53^31 GGEfifibb STT MAPX BLU60/28 J Ruggedness in class-B operation The 8LU60


OCR Scan
PDF bbS3R31 BLU60/28 BLU60/28 OT119) MCA443 70cN
Not Available

Abstract: No abstract text available
Text: TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for , mb-h max. max. 1.55 K/W 0.2 K/W \r 216 August 1990 1 PHILIPS INTERNATIONAL UHF power transistor , values. Conditions for Figs 5 to 7 Class-B operation; VCE = 28 V; f = 470 MHz; Rth mb_h = 0.2 K/W. 218 August 1990 1 PHILIPS INTERNATIONAL UHF power transistor _J V_ Ruggedness in class-B operation


OCR Scan
PDF BLU60/28 BLU60/28 OT119) 55rth 711002b
1998 - 4c6 toroids

Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
Text: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 , ) LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96 TRANSISTORS 2 PART 2 A SINGLE-STAGE WIDEBAND (1.6 - 30 MHz) LINEAR AMPLIFIER FOR 25 W PEP USING BLW50F TRANSISTORS IN 3 PART 3 A TWO-STAGE WIDEBAND H.F. LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96 AND BLW50F TRANSISTORS 1998 Mar 23 2


Original
PDF BLW96 BLW50F AN98030 BLW96 4c6 toroids Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 ECO6907 BLW50F blw96 equivalent
2010 - BC548 TRANSISTOR REPLACEMENT

Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
Text: TR1 bias transistor , BC548 or equivalent capacitor; notes 2 and 3 120 pF C2 capacitor , TR1 bias transistor , BC548 or equivalent note 1 C1, C6, C7, C8 capacitor; notes 2 and 3 , DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a


Original
PDF BFG10W/X OT343N MBK523 R77/01/pp11 BC548 TRANSISTOR REPLACEMENT transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
10D41

Abstract: CMC 339 TT 2222 cross reference 2222 philips 0805 ceramic Philips npo 0805 AgPd resistor
Text: INFORMATION FOR 63 VOLT GENERAL PURPOSE SERIES J Class 1, NPO series 2222 Packaging 5 8 X X X X , multilayer capacitors ORDERING INFORMATION FOR 500 VOLT HIGH VOLTAGE SERIES J Class 1, NPO series 2222 , bulk case (case sizes 0603 and 0805 only); loose in bag available on request · For high frequency , multilayer capacitors MECHANICAL DATA Class 1, NPO series MBB211 For dimensions see Table 1 Fig , Components Product specification Surface mounted ceramic multilayer capacitors SELECTION CHART FOR 63


OCR Scan
PDF DD31b3 10D41 CMC 339 TT 2222 cross reference 2222 philips 0805 ceramic Philips npo 0805 AgPd resistor
Narda 904N

Abstract: transistor et 455 sealectro AN3764 equivalent transistor rf 2N5470 TA7003 Narda Microwave narda rf 0/Narda 904N
Text: silicon n-p-n planar transistor employing the overlay emitter-electrode construction. It is intended for , SILICON N-P-N "overlay" TRANSISTOR - T JEDEC TO-215AA For UHF/Microwave Power Amplifiers, Microwave , , 1 02, 1/32 in. (.793) thick, (6=2.6), or equivalent . Fig. 14- Typical Circuit for 2-GHz G , package of the 2N5470 features low parasitic capacitances and inductances which provide for stable operation in the common-base amplifier configuration. This transistor can be used in both large and


OCR Scan
PDF 2N5470 RCA-2N5470* 2N5470 2N5470, AN3764, 16-Detail Narda 904N transistor et 455 sealectro AN3764 equivalent transistor rf TA7003 Narda Microwave narda rf 0/Narda 904N
equivalent for transistor tt 2222

Abstract: 2N6678T1 2N6676T1 JANS 2N6678T1 2N6693 2N6691 2N6676 2n6678 JANS 2N6676T1 2N6678 JANTX equivalent
Text: ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (TO-3) for , Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions (TO-61) for 2N6691 , .5M, diameters are equivalent to x symbology. * FIGURE 3. Dimensions and configuration for 2N6676T1 and , -19500/538D 26 June 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR , NPN, SILICON , , JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the


Original
PDF MIL-PRF-19500/538E MIL-PRF-19500/538D 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, 2N6693, equivalent for transistor tt 2222 2N6678T1 2N6676T1 JANS 2N6678T1 2N6693 2N6691 2N6676 2n6678 JANS 2N6676T1 2N6678 JANTX equivalent
BLU60/28

Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE D m 711002b OObSTST 125 BLU60/28 IPHIN l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an , transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-emitter breakdown voltage Vbe = , . Conditions for Figs 5 to 7 Class-B operation; VCE = 28 V; f = 470 MHz; Rth mb.h = 0.2 KAN. 218 T August


OCR Scan
PDF 711002b BLU60/28 BLU60/28 OT119) 00bE7bS
2003 - BJT 2222

Abstract: npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 driver circuit Si321x 2N2222 bjt IRLL014N equivalent BJT 2N2222 dc current gain W6 13A Diode IBJT
Text: -E FF × I PK 2 × Fs Equation 16 Table 1 lists the requirements for the switching transistor , Q7 , current requirement for the inductor. fT > 100 MHz Another critical specification is the transistor , difficult for the DCDRV and DCFF pins to switch the transistor off quickly, which further decreases , higher) general-purpose transistor (2N2222 is recommended). The equations for R28 and R29 are as , connected between VCC and VBAT as a biasing circuit for the transistor , Q9. When VBAT approaches the


Original
PDF Si3210/15/16 Si321x BJT 2222 npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 driver circuit 2N2222 bjt IRLL014N equivalent BJT 2N2222 dc current gain W6 13A Diode IBJT
2009 - BJT 2222

Abstract: npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 SDCL transistor BJT 2N2222 W6 13A Diode bjt 2n2222 driver circuit IRLL014N SMALL low frequency transformer
Text: requirements for the switching transistor , Q7. 1.4.2. Power Inductor Selection Table 1. Switching , between VCC and VBAT as a biasing circuit for the transistor , Q9. When VBAT approaches the predetermined , ) general-purpose transistor (2N2222 is recommended). The equations for R28 and R29 are as follows: VCC + VBE , . Component Voltage Rating The general purpose 2222 transistor meets all of the above requirements , AN45 D E S I G N G U ID E Si3210/15/16 DC-DC CONVERTER FOR THE 1. Introduction The


Original
PDF Si3210/15/16 Si321x BJT 2222 npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 SDCL transistor BJT 2N2222 W6 13A Diode bjt 2n2222 driver circuit IRLL014N SMALL low frequency transformer
free transistor

Abstract: common base amplifier circuit MC 150 transistor transistor free transistor Common Base amplifier "MC 150" transistor germanium transistor pnp S PARAMETERS FOR TRANSISTOR Germanium Transistor if TRANSISTOR
Text: E D I S W A N MAZDA XAI03 I.F. TRANSISTOR Germanium PNPJunction Type TENTATIVE GENERAL The XAI03 is a pnp junction type transistor suitable for use as an I.F. Amplifier at frequencies between 250 and , transistor is hermetically sealed in a small can. RATINGS—Absolute Values for 45°C. Ambient (Maximum , Germanium PNP Junction Type TENTATIVE COMMON EMITTER EQUIVALENT tt NETWORK Small Signal Values at Vc=â , parameters are derived from the accompanying one generator equivalent tt circuit, and are applicable over the


OCR Scan
PDF XAI03 free transistor common base amplifier circuit MC 150 transistor transistor free transistor Common Base amplifier "MC 150" transistor germanium transistor pnp S PARAMETERS FOR TRANSISTOR Germanium Transistor if TRANSISTOR
1998 - Philips 4312 020

Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 philips rf choke ferrite blw 64 rf transistor PHILIPS 4312 amplifier 151 schematic for 88 to 108 amplifier
Text: copper-clad epoxy fibre glass (r = 4.5), thickness 1/16-inch. 1 INTRODUCTION The BLV25 power transistor is intended for use in FM broadcast transmitters and transposers. This transistor which is in a 6 , SUMMARY For transmitters and transposers for the FM broadcast band (87.5 - 108 MHz), a 300 W push-pull , a 28 V supply. In addition, a suitable single-stage driver amplifier using a BLW86 transistor also , describes the design and practical implementation of a 300 W wideband push-pull amplifier for the FM


Original
PDF BLV25 AN98031 BLV25 BLW86 SCA57 Philips 4312 020 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 philips rf choke ferrite blw 64 rf transistor PHILIPS 4312 amplifier 151 schematic for 88 to 108 amplifier
1998 - 2322-211

Abstract: Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid A Wideband hybrid coupled amplifier 470 - 860 MHz NCO8205 NCO8201 2222-809 trimmer
Text: INTRODUCTION The BLV57 is a balanced transistor in an 8 lead envelope (SOT161) for class A operation in TV-transposers for band 4/5. A class A amplifier, designed around two transistors BLV57, has been described in , transistor has its own bias unit to obtain a stable DC-setting for class AB operation (see Fig.2). This bias , ICZ = 100 mA for each transistor chip. The typical gain, input and load impedance of a half BLV57 , transistors BLV57 1 Application Note NCO8205 SUMMARY For application in TV transmitters in band 4/5


Original
PDF BLV57 NCO8205 BLV57 SCA57 2322-211 Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid A Wideband hybrid coupled amplifier 470 - 860 MHz NCO8205 NCO8201 2222-809 trimmer
transistor G13

Abstract: transistor BC548 BC548 and its h parameter values bc54b marking c7 SOT343 4330 030 36301 BC548 stripline marking code fz Amplifier with transistor BC548
Text: . • Driver for DCS 1800. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a , Philips Semiconductors NPN 2 GHz power transistor Product specification BFG11W/X FEATURES â , specification NPN 2 GHz power transistor BFG11W/X LIMITING VALUES In accordance with the Absolute Maximum , GHz power transistor BFG11W/X CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL , transistor BFG11W/X List of components used in test circuit (see Figs 5 and 6) COMPONENT DESCRIPTION VALUE


OCR Scan
PDF BFG11W/X OT343 OT343 MGD416 711082b OT343. C1104554 transistor G13 transistor BC548 BC548 and its h parameter values bc54b marking c7 SOT343 4330 030 36301 BC548 stripline marking code fz Amplifier with transistor BC548
TRANSISTOR 3F z

Abstract: germanium transistor pnp crt 1700 OC 44 germanium transistor pnp germanium transistor mazda 3 TRANSISTOR C-111 Germanium Transistor Germanium power Germanium Amplifier
Text: E D I S W A N MAZDA XAIOI I.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE GENERAL The XAIOI is a pnp junction type transistor suitable for use as an I.F. Amplifier at frequencies between 250 and 500 Kc/s. The element of the transistor is hermetically sealed in a small can. RATINGS—Absolute , €”5v, lc= —ImA t lc=—50mA, lb= —I ImA tlc=—50mA, Vc_e=—IV COMMON EMITTER EQUIVALENT tt NETWORK , above parameters are derived from the accompanying one generator equivalent tt circuit, and are


OCR Scan
PDF
b556

Abstract: PD67000 2222 kn a F424 F304 b559 F314 AN pd67020 B558 PD67030
Text: transistors: eight n-channel, four pchannel, and two npn bipolar. The internal cell is equivalent to two gates; the external cell is equivalent to one gate. These application-specific integrated circuits (ASICs , ) and packages, including low-cost plastic DIP, PGA, flat, and PLCC. Gate arrays are intended for customers seeking costeffective alternatives for VLSI designs. With gate arrays, designers can decrease , turnaround time for prototypes: 8 to 12 weeks Simple Interface to customer's logic diagram and test patterns


OCR Scan
PDF 6427S2S M275ES bM27525 I7993 T-45W/-/5 b556 PD67000 2222 kn a F424 F304 b559 F314 AN pd67020 B558 PD67030
1998 - linear amplifier 470-860

Abstract: BLW34 PM3260 HP8620C HP86222A an blw32 33 RESISTOR pr37 PR37 RESISTOR enamelled copper wire tables HP8558B
Text: 4.00 5.36 7.67 To facilitate calculations an approximate equivalent circuit for the transistor , with ceramic cap. 3 3.1 THEORETICAL CONSIDERATIONS The equivalent circuit of the BLW34 For , 3.1.1 3.1.2 The equivalent circuit of the BLW34 The output network The input network 4 THE , ) with two transistors BLW34 1 Application Note ECO7901 ABSTRACT For application in driver or , designed with 2 transistors BLW34 coupled by means of 3 dB -90° hybrids. Each transistor is adjusted in


Original
PDF BLW34 ECO7901 SCA57 linear amplifier 470-860 BLW34 PM3260 HP8620C HP86222A an blw32 33 RESISTOR pr37 PR37 RESISTOR enamelled copper wire tables HP8558B
2003 - ZX5T851G

Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
Text: NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES · Extremely low equivalent on-resistance , ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = , VALUE UNIT 42 °C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface


Original
PDF ZX5T851G OT223 OT223 ZX5T851G ZX5T851GTA ZX5T851GTC Bv 42 transistor
2004 - ZX5T849Z

Abstract: ZX5T849ZTA MARKING 7A SOT89
Text: NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES · Extemely low equivalent on-resistance; RSAT , ZX5T849Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = , °C/W NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x


Original
PDF ZX5T849Z ZX5T849ZTA ZX5T849Z ZX5T849ZTA MARKING 7A SOT89
Supplyframe Tracking Pixel