The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BM2P109TF BM2P109TF ECAD Model ROHM Semiconductor Switching Regulator,
BM2SC124FP2-LBZ BM2SC124FP2-LBZ ECAD Model ROHM Semiconductor Quasi-resonant(Low EMI) AC/DC Converter Built-in 1700 V SiC-MOSFET (FB OLP=Latch ,VCC OVP=Auto Restart)
BD9A600MUV BD9A600MUV ECAD Model ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter
BD9D321EFJ BD9D321EFJ ECAD Model ROHM Semiconductor 4.5 to 18V 3.0A 1ch Synchronous Buck Converter,External Current Detection Resistors, 1.4 ohm on resistor
BD9G341AEFJ-LB BD9G341AEFJ-LB ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade)
BD9P205MUF-C BD9P205MUF-C ECAD Model ROHM Semiconductor 3.5V to 40V Input, 0.8V to 8.5V Output, 2A Single 2.2MHz Buck DC/DC Converter For Automotive, VQFN20FV4040 Package

equivalent components of diode her207 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - FAN7554 equivalent

Abstract: NPX104M275VX2M FDQ2N80 CTX0117 FAN7554 FEB157 evaluation board FEB157-001 evaluation board EFD20 no y-cap FEB157 RTH1 THERMISTOR
Text: consisting of resistors R2, R3, R4, diode D1 and capacitor C3 clamp the resulting leakage inductance spike , time of Q1. Diode D4, and C11 rectify and filter the resulting secondary waveform to form a dc voltage , Equivalent NPX104M275VX2M 0.1µF, X2 cap C2 NIC Components NREH470M450V18X36F 47µF, 450V , NIC Components or Equivalent NACK470M50V6.3X8TR 47µF, 50V, SMD C5 NIC Components or Equivalent NMC0603X7R104K50TRP 0.1µF, 50V, 0603 C6 NIC Components or Equivalent


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PDF FEB157-001 FAN7554 FAN7554 equivalent NPX104M275VX2M FDQ2N80 CTX0117 FAN7554 FEB157 evaluation board FEB157-001 evaluation board EFD20 no y-cap FEB157 RTH1 THERMISTOR
1999 - SLOA027

Abstract: selenium diode selenium diodes carbon composition resistors cost tunnel diode selen
Text: List of Figures 1 2 3 4 5 Resistor Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . Diode Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . A combination of passive components can multiply a signal by values less than one, they can shift , just pick them from a list of standard components . Although this practice is adequate for some , including definitions of parasitic components are available from the various component manufacturers


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PDF SLOA027 SLOA027 selenium diode selenium diodes carbon composition resistors cost tunnel diode selen
2000 - PIN diode SPICE model

Abstract: NET028 NET045 NET051 pin diode model spice R2080
Text: performance. The resulting equivalent circuits model the performance of each stage in the extracted form , circuit model of pads for both technologies ("padeq"). Figure 2. Equivalent circuit of input buffer , elements of the input stage equivalent circuit model for all technologies 1.25 Gbit/s technology , Equivalent Circuit for the LVDS output stages Each output stage requires an external load of 100 Ohm , , capacitive loading of 1 pF at each output has been included during simulation. When using the equivalent


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PDF D-13623, PIN diode SPICE model NET028 NET045 NET051 pin diode model spice R2080
1999 - Fixed Carbon Film Resistors

Abstract: Surface Mount Type Slide Switch definition
Text: List of Figures 1 2 3 4 5 Resistor Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . Diode Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . A combination of passive components can multiply a signal by values less than one, they can shift , just pick them from a list of standard components . Although this practice is adequate for some , including definitions of parasitic components are available from the various component manufacturers


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PDF SLOA027 Fixed Carbon Film Resistors Surface Mount Type Slide Switch definition
1997 - HSMS-2860 equivalent

Abstract: Hewlett-Packard microwave pin diode zero bias schottky diode detector HSMS-2850 hsms-285b HSMS-286A 286E HSMS-285A HSMS285B Hewlett-Packard transistor microwave
Text: equivalent circuit. , METAL PASSIVATION N-TYPE OR P-TYPE EPI IS is a function of diode barrier , Measuring Diode Parameters The measurement of the five elements which make up the equivalent circuit for , EQUIVALENT CIRCUIT Figure 9. Schottky Diode Chip. RS is the parasitic series resistance of the diode , detector circuits, the starting point is the equivalent circuit of the diode , as shown in Figure 10 , . Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists


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PDF OT-323 SC-70) HSMS-285A HSMS-286A HSMS-285A HSMS-2860 equivalent Hewlett-Packard microwave pin diode zero bias schottky diode detector HSMS-2850 hsms-285b 286E HSMS285B Hewlett-Packard transistor microwave
1999 - germanium diodes forward drop

Abstract: SLOA027 AIR FLOW DETECTOR circuit abstract Mancini AIR FLOW DETECTOR circuit with abstract
Text: List of Figures 1 2 3 4 5 Resistor Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . Diode Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . A combination of passive components can multiply a signal by values less than one, they can shift , just pick them from a list of standard components . Although this practice is adequate for some , including definitions of parasitic components are available from the various component manufacturers


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PDF SLOA027 germanium diodes forward drop SLOA027 AIR FLOW DETECTOR circuit abstract Mancini AIR FLOW DETECTOR circuit with abstract
1998 - HSMS-2860 equivalent

Abstract: HSMS-286 HSMS-286K k 2865 MARKING CODE E6 sot363 marking code e5 sot363 DIODE RF DETECTOR
Text: CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT Figure 9. Schottky Diode Chip. R S is , . Equivalent Circuit of a Schottky Diode . RS is perhaps the easiest to measure accurately. The V-I curve is , detector circuits, the starting point is the equivalent circuit of the diode , as shown in Figure 10. Of , elements of the diode 's equivalent circuit, the four parasitics are constants and the video resistance is a , . Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a


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PDF OT-363 SC-70, HSMS-285L/P HSMS-286K/L/P/R OT-363 HSMS-286a HSMS-285a HSMS-286K HSMS-286K/L/P/R HSMS-2860 equivalent HSMS-286 k 2865 MARKING CODE E6 sot363 marking code e5 sot363 DIODE RF DETECTOR
1997 - equivalent components of diode ak 03

Abstract: No abstract text available
Text: OR P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT , an important design consideration. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The most common of several different types, the passivated diode , is , parameters) Ib = externally applied bias current in amps IS is a function of diode barrier height, and


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PDF OT-363 SC-70, HSMS-285L/P HSMS-286L/P/R 5966-2032E equivalent components of diode ak 03
1999 - 3s0680rf

Abstract: 3s0680rf DIAGRAM 3S0680R 3s0680rf circuit diagram eer3543 3S0680R B 220v ac to 5v dc 100w smps 3S0680 full bridge smps resonance snubber diode d2sb series
Text: package, the SPS attempts to include the maximum number of external components to reduce the surrounding , recovery current of the secondary diode etc. If it turns on at a very high voltage, a very large current , stored in transformer magnetic inductance increases the equivalent output capacitor(Coss) voltage of Vds , : diode voltage drop) The Vds voltage consists of the rectiÞed voltage of the input voltage and converted , shows the equivalent circuit when the diode (D2) turns on. When Vds voltage reaches Vds1 at t1, the


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PDF AN4102 3s0680rf 3s0680rf DIAGRAM 3S0680R 3s0680rf circuit diagram eer3543 3S0680R B 220v ac to 5v dc 100w smps 3S0680 full bridge smps resonance snubber diode d2sb series
100A101MCA50

Abstract: No abstract text available
Text: SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT Figure 9. Schottky Diode Chip. Figure 10. Equivalent Circuit o f a Schottky Diode . Rs is the parasitic series resistance of the diode , (see table of SPICE parameters) Ib = externally applied bias current in amps Is is a function of diode , levels keep Rv low). M easuring D iod e Param eters Stripped of its package, a Schottky barrier diode , . The most common of several different types, the passivated diode , is shown in Figure 9, along with its


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PDF OT-323 HSMS-285A HSMS-286A OT-323 5965-4704E 5965-8838E 100A101MCA50
2005 - METAL DETECTOR circuit for make

Abstract: 915 MHz RFID SCHOTTKY DIODE SOT-143 Microwave detector diodes rf detector diode Microwave PIN diode spice diode MARKING A1 Microwave detector diodes 18 GHz HSMS-285x marking code nt
Text: is related to the barrier height of the diode . EQUIVALENT CIRCUIT Figure 5. Schottky Diode , , the starting point is the equivalent circuit of the diode , as shown in Figure 6. 50 9 K -30 , resistance. Of these five elements of the diode 's equivalent circuit, the four parasitics are constants , . Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists , most common of several different types, the passivated diode , is shown in Figure 5, along with its


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PDF HSMS-285x OT-23/ OT-143 HSMS-282x HSMS-286x OT-363 SC70-6 5989-2494EN 5989-4022EN METAL DETECTOR circuit for make 915 MHz RFID SCHOTTKY DIODE SOT-143 Microwave detector diodes rf detector diode Microwave PIN diode spice diode MARKING A1 Microwave detector diodes 18 GHz marking code nt
2005 - HSMS-285x model

Abstract: ZERO Bias diode marking code e1 DIODE microstrip RFID tag agilent model marking code marking code e6 sot363 HSMS-285C
Text: different types, the passivated diode , is shown in Figure 5, along with its equivalent circuit. tance of , ( ) LP EQUIVALENT CIRCUIT RV RS Cj CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP Figure 5 , 0.08 pF LP = 2 nH Cj = 0.18 pF RS = 25 RV = 9 K Figure 6. Equivalent Circuit of a Schottky Diode , capacitance and the video resistance. Of these five elements of the diode 's equivalent circuit, the four , Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a


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PDF HSMS-285x OT-23/ OT-143 OT-323 OT-363 OT-23/SOT-143 5989-0479EN 5989-2494EN HSMS-285x model ZERO Bias diode marking code e1 DIODE microstrip RFID tag agilent model marking code marking code e6 sot363 HSMS-285C
2005 - HSMS-285x model

Abstract: P5 SOT-323 Marking Code m sc70-6 HSMS-286* reliability HSMS-285x spice model
Text: shown in Figure 5, along with its equivalent circuit. tance of the diode , controlled by the thickness , 2 nH Cj = 0.18 pF RS = 25 RV = 9 K Figure 6. Equivalent Circuit of a Schottky Diode . 6 , capacitance and the video resistance. Of these five elements of the diode 's equivalent circuit, the four , diode is not designed for large signal designs. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of a


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PDF HSMS-285x OT-23/ OT-143 HSMS-282x HSMS-286x configurat25 5989-0479EN 5989-2494EN HSMS-285x model P5 SOT-323 Marking Code m sc70-6 HSMS-286* reliability HSMS-285x spice model
Not Available

Abstract: No abstract text available
Text: , along with its of a Schottky barrier diode at equivalent circuit. room temperature is described by , Measuring Diode Linear Parameters The measurement of the five elements which make up the equivalent , P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT FOR , starting point is the equivalent circuit of the diode , as shown in Figure 10. Of interest in the design , amps Schottky Barrier Diode Is is a function of diode barrier Characteristics height, and can range


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PDF OT-363 SC-70, 285L/P 286L/P/R
2004 - 915 MHz RFID

Abstract: marking code e6 sot363 Marking Code ABC marking code PB surface mount diode marking code tc sot 363 METAL DETECTOR circuit for make SCHOTTKY DIODE SOT-143 HSMS2850 HSMS285B HSMS-285C
Text: . EQUIVALENT CIRCUIT Figure 5. Schottky Diode Chip. RS is the parasitic series resistance of the diode , K Figure 6. Equivalent Circuit of a Schottky Diode . 6 RS is perhaps the easiest to , design of such detector circuits, the starting point is the equivalent circuit of the diode , as shown , , the junction capacitance and the video resistance. Of these five elements of the diode 's equivalent , Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor


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PDF HSMS-285x OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 C70-3 OT-363 SC70-6 915 MHz RFID marking code e6 sot363 Marking Code ABC marking code PB surface mount diode marking code tc sot 363 METAL DETECTOR circuit for make SCHOTTKY DIODE SOT-143 HSMS2850 HSMS285B HSMS-285C
2006 - SCHOTTKY DIODE SOT-143

Abstract: METAL DETECTOR circuit for make AN1124 HSMS-285x chip diode 047 diode MARKING A1 diode schottky code 10 esd diode a2 on semiconductor marking code sot marking code nt
Text: SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT Figure 5 , Cj = 0.18 pF RS = 25 RV = 9 K Figure 6. Equivalent Circuit of a Schottky Diode . RS is , design of such detector circuits, the starting point is the equivalent circuit of the diode , as shown , circuit is the diode 's video impedance - the other four elements of the equivalent circuit disappear at , these five elements of the diode 's equivalent circuit, the four parasitics are constants and the


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PDF HSMS-285x OT-23/SOT-143 HSMS-282x HSMS-286x OT-323 SC70-3 OT-363 SC70-6 SCHOTTKY DIODE SOT-143 METAL DETECTOR circuit for make AN1124 chip diode 047 diode MARKING A1 diode schottky code 10 esd diode a2 on semiconductor marking code sot marking code nt
2005 - S11 SCHOTTKY diode

Abstract: zero bias diode AV02-1377EN HSMS-285x 285L HSMS-285C AVAGO DATE CODE MARKING A004R AN1124 all silicon metal rectifier diode product List
Text: N-TYPE OR P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT , 2 nH Cj = 0.18 pF RS = 25 RV = 9 K Figure 6. Equivalent Circuit of a Schottky Diode . -5 , circuits, the starting point is the equivalent circuit of the diode , as shown in Figure 6. Of interest in , Diode Characteristics Stripped of its package, a Schottky barrier diode chip c onsists of a , different types, the passivated diode , is shown in Figure 5, along with its equivalent circuit. RS


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PDF HSMS-285x OT-23/SOT143 HSMS-282x HSMS-286x HSMS-285x OT-323 SC70-3 OT-363 SC70-6 S11 SCHOTTKY diode zero bias diode AV02-1377EN 285L HSMS-285C AVAGO DATE CODE MARKING A004R AN1124 all silicon metal rectifier diode product List
1999 - HSMS-285C

Abstract: Microwave detector diodes 285L AN1124 HSMS2850 HSMS-2850 HSMS285B marking code e6 sot363 HSMS-285x model
Text: height of the diode . EQUIVALENT CIRCUIT Figure 5. Schottky Diode Chip. RS is the parasitic , , the starting point is the equivalent circuit of the diode , as shown in Figure 6. 50 9 K -30 , resistance. Of these five elements of the diode 's equivalent circuit, the four parasitics are constants , Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor , types, the passivated diode , is shown in Figure 5, along with its equivalent circuit. RS


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PDF HSMS-2850 OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 5968-5437E, 5968-5908E, 5968-2355E HSMS-285C Microwave detector diodes 285L AN1124 HSMS2850 HSMS285B marking code e6 sot363 HSMS-285x model
2005 - AV02-1377EN

Abstract: HSMS-285C HSMS-285X S11 SCHOTTKY diode 285L A004R AN1124 HSMP4 ir 0022 avago marking j
Text: N-TYPE OR P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT , 2 nH Cj = 0.18 pF RS = 25 RV = 9 K Figure 6. Equivalent Circuit of a Schottky Diode . -5 , circuits, the starting point is the equivalent circuit of the diode , as shown in Figure 6. Of interest in , Diode Characteristics Stripped of its package, a Schottky barrier diode chip c onsists of a , different types, the passivated diode , is shown in Figure 5, along with its equivalent circuit. RS


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PDF HSMS-285x OT-23/SOT143 HSMS-282x HSMS-286x HSMS-285x OT-323 SC70-3 OT-363 SC70-6 AV02-1377EN HSMS-285C S11 SCHOTTKY diode 285L A004R AN1124 HSMP4 ir 0022 avago marking j
1992 - 1N525

Abstract: 1N753 CY7C429 zener diode 6.2v
Text: the capacitance. Differentiating yields i(t) = The impedance of the simplified equivalent , 's expected high-frequency components . Begin by assuming that the circuit is driven by a series of digital , their frequency components . Figure 3. Simplified Capacitor Equivalent Circuit For high-frequency , Protection, Decoupling, and Filtering of Cypress CMOS Circuits This application note explains how to protect your ICs with a low-cost zener diode and why it is good insurance against inadvertent


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2006 - electrolytic capacitor filter

Abstract: ADP1621 GRM31CR60J476M IRF7470 M400 RB10 SSA33L equivalent smd mosfet CRCW0603150 IRF7470 equivalent
Text: forward-voltage drop of the diode . With VIN = 3.3 V, and VOUT = 5 V, the duty cycle is calculated to be about 40 , equivalent series inductance of COUT, can be found by solving the following equation: I I VOUT LOAD , of 12 EVAL-ADP1621 Diode Selection and The diode conducts the inductor current to the , that fC is 40 kHz and is lower frequency than that of Equation 12. The loop compensation components , for the temperature of the power components after running the board at a 2 A load for 30 minutes. TA


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PDF EVAL-ADP1621 ADP1621 SSA33L CDRH104R-2R5NC MSS1038-252NL GRM31CR60J476M GRM32DR71C106KA01 VJ0603Y104MXQ GRM188R61A105K electrolytic capacitor filter GRM31CR60J476M IRF7470 M400 RB10 SSA33L equivalent smd mosfet CRCW0603150 IRF7470 equivalent
2006 - AVAGO MARKING E4

Abstract: AN1124 diode piv 10 on semiconductor marking code sot Product type marking code 039 sc-70 package pcb layout diode marking code RJ marking code abc marking code e2 Microwave PIN diode spice
Text: Reliable assembly of surface mount components is a complex process that involves many material, process , conductivity and thermal mass of components . Components with a low mass, such as the SOT-323/-23 package , RS-481, "Taping of Surface Mounted Components for Automated Placement." E1 SYMBOL A A1 , provide for a key PIN diode characteristic, carrier lifetime. · Low Failure in Time (FIT) Rate[1] · , ] Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the


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PDF HSMP-381x, HSMP-381x HSMP-481x OT-23 OT-323 OT-323 SC70-3 OT-363 SC70-6 AV01-0378EN AVAGO MARKING E4 AN1124 diode piv 10 on semiconductor marking code sot Product type marking code 039 sc-70 package pcb layout diode marking code RJ marking code abc marking code e2 Microwave PIN diode spice
2006 - AVAGO MARKING E4

Abstract: MARKING E4 "Pin Diode" marking e4 sot
Text: and leads 1 and 2 of the HSMP-481x series diode are placed across the resulting gap. This forces the , assembly of surface mount components is a complex process that involves many material, process, and , conductivity and thermal mass of components . Components with a low mass, such as the SOT-323/-23 package, will , one or more preheat zones. The preheat zones increase the temperature of the board and components to , -481, "Taping of Surface Mounted Components for Automated Placement." Device Orientation For Outlines


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PDF HSMP-381x, HSMP-381x HSMP-481x OT-23 OT-323 AV01-0378EN AV02-0402EN AVAGO MARKING E4 MARKING E4 "Pin Diode" marking e4 sot
1992 - Zener Diode frequency

Abstract: capacitors 104 crowbar fast zener diode 103 capacitor 6.2V Zener Diode 1N525 1N753 CY7C429
Text: the capacitance. Differentiating yields i(t) = The impedance of the simplified equivalent , 's expected high-frequency components . Begin by assuming that the circuit is driven by a series of digital , their frequency components . Figure 3. Simplified Capacitor Equivalent Circuit For high-frequency , fax id: 4502 Protection, Decoupling, and Filtering of CMOS Circuits Protection, Decoupling, and Filtering of Cypress CMOS Circuits This application note explains how to protect your ICs with a


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HSMS-Z85A

Abstract: HSMS-Z86A metal detector circuit with pcb k and ka band radar detector marking code ER sot 143 HSMS-286L sot143 Marking code RY receiver transmitter 1.2 ghz video
Text: of the five elements which make up the equivalent circuit for a packaged Schottky diode (see Figure , contact. Rj is the junction resistance of the diode , a function Figure 10. Equivalent Circuit o f a , circuits, the starting point is the equivalent circuit of the diode , as shown in Figure 10. Of interest in , and the video resistance. Of these five elements of the diode 's equivalent circuit, the four , . Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a


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PDF OT-363 SC-70, HSMS-285L/P HSMS-286L/P/R OT-363 HSMS-286L/P/R 5966-2032E HSMS-Z85A HSMS-Z86A metal detector circuit with pcb k and ka band radar detector marking code ER sot 143 HSMS-286L sot143 Marking code RY receiver transmitter 1.2 ghz video
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