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Part Manufacturer Description Datasheet Download Buy Part
LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85

equivalent IRF640 FI Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Text: STW6NA80 STW4NA100 IRF640 STP9N30 STP15N06L STP21N06L STP36N06L STE38NA50 STP50N06L STW10NA50 , IRF530 STP20N06 STP20N06 IRF630 IRF630 STP4NA40 STP3NA50 STP3NA60 STP3NA90 IRF540 IRF640 STP7NA40 STP5NA50 STP4NA60 STP36N06 STP36N06 STP33N10 STP3NA100 STP33N10 IRF640 IRF640 STP50N06 , STP33N10 STP15N25 STW9NA80 IRF640 IRF640 STW4NA100 STW7NA100 IRF63O STW16NA40 STW16NA40 STW12NA50 , IRF621 IRF622 IRF623 IRF624 IRF630 IRF630FI IRF630S IRF631 IRF632 IRF640 IRF640FI IRF640S


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PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
buz 350 equivalent

Abstract: VN0109n5 analog VN10KM equivalent sony 2sj54 VQ1004 equivalent vq1004 VN67ad analog VN0300M equivalent supertex VN10KE VN10lM equivalent
Text: MOSPOWER Cross Refi erence List (Cont'd) SIEMENS (Cont'd) Industry BVdss rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms). Equivalent (Volts) (Ohms) BUZ 14 50 0.04 TO-3 _ _ _ BUZ 15 50 0.03 TÖ-3 _ — _ BUZ 20 100 0.20 TO-220 VN1000D 100 0.18 BUZ 21 100 0.10 TO , .10 TO-3 IRF540 100 0.085 BUZ 30 200 0.75 TO-220 IRF632 200 0.6 BUZ 31 200 0.20 TO-220 IRF640 200 0.18 , DIMENSIONS IN MILLIMETERS) 0.640 fIS. 261 LLZ'J (1700 „TM fi . 2?) top of package • notch or hole


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PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 buz 350 equivalent VN0109n5 analog VN10KM equivalent sony 2sj54 VQ1004 equivalent vq1004 VN67ad analog VN0300M equivalent supertex VN10KE VN10lM equivalent
hfp640

Abstract: IRF640 equivalent irf640
Text: Equivalent Type: IRF640 · Maximum RatingsTa=25 unless otherwise specified T stg -Storage Temperature


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PDF HFP640 O-220 IRF640 width300S hfp640 IRF640 equivalent irf640
2001 - IRF3710 equivalent

Abstract: IRFP150N equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
Text: gives a quick comparison between recognised industry components and their nearest Philips equivalent , equivalent based RDS(ON) SO-8 TO-220 DPAK www.semiconductors.philips.com Philips , IRF3710S IRF530 IRF530N IRF540 IRF540N IRF540NS IRF630 IRF630N IRF630NS IRF640 IRF640N IRF640NS , PHP14NQ20T PHB14NQ20T IRF640 PHP20NQ20T PHB20NQ20T PHK5NQ10T PSMN038-100K PHP23NQ15T PSMN070


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PDF IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRF3710 equivalent IRFP150N equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
VN2410L equivalent

Abstract: VN2410L "cross reference" VN1210M equivalent VN2410M VN0300M equivalent MTM8N20 IRF820 IRF440 IRF350 IRF340
Text: MOSPQWER Cross Reference List (Cont'd) INTERSIL (Cont'd) Industry BVdsS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) ivn6100tnu 500 15.0 to-39 — _ _ ivn6200cnd 40 0.35 to-220 vn0401d 40 0.15 ivn6200cne 60 0.25 t0-220 irf533 60 0.25 , CAla^Ar fi . iti At mwwi V/ f f bi\ r i il 11V r i wiuvi «j^iwiwi vuiv« MOSPOWER Prime Product Selector , 5.5A, 1.0Q 150-240 IRF250 30A, 0.085« IRF640 18A, 0.18!) VN2406B 0.8A, 6!) VN2406M 0.3A, 6


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PDF ivn6100tnu to-39 ivn6200cnd to-220 vn0401d ivn6200cne t0-220 irf533 ivn6200cnf VN2410L equivalent VN2410L "cross reference" VN1210M equivalent VN2410M VN0300M equivalent MTM8N20 IRF820 IRF440 IRF350 IRF340
1998 - IRF3205 equivalent

Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Text: up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test Hrs. @ 90°C & Failure Rate Temp , IRF640 9748 150 85 1000 0 1.0E+07 0.089 89 IRF610 9646 150 110 1000 0 1.3E+07 0.069 69 , : Vs = Vd = 0V; Vg as specified Equivalent Dev. - Failure Rate @ Hrs. @ 90°C & Vg 90°C & Vg = Test , explanation of equivalent device hours for HTRB tests. c. One FIT represents one failure in one billion (1.0E+09) hours. d. EQUIVALENT DEV-HRS for the long term gate stress test are determined by Crook's Model


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PDF O-220/D2PAK IRF9630 IRF9510L IRF9520 IRF9510 IRF9Z14 IRF9Z34 IRCZ34 IRCZ44 IRC540 IRF3205 equivalent IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
2003 - Snubber circuits theory, design and application

Abstract: IRF640 application note CTX08-13916 SEM-700 Closing The Feedback Loop UNITRODE product and applications handbook telsa philips 3C85 ferrite material power MOSFET IRF640 80 watt as switch power MOSFET IRF640 80 watt PHILIPS toroidal core 3c85
Text: 2 1 R14 750 TP6 R7 15K PGND 2 TP4 R8 0.15 3W Q3 IRF640 TP5 5:1 , switching losses (14), calculated to be 3.3W for the IRF640 FET. Without appropriate heatsinking, this , temperature, Tj, from exceeding 150 C and avert device failure due to excessive heating. The IRF640 has a , calculates to be 160V. An IRF640 N-channel power MOSFET was chosen. This device has a voltage rating of , capacitors are also chosen based upon their low equivalent series resistance (ESR), ripple current and


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PDF U-165 SLUU096 UCC3809 U-165 Snubber circuits theory, design and application IRF640 application note CTX08-13916 SEM-700 Closing The Feedback Loop UNITRODE product and applications handbook telsa philips 3C85 ferrite material power MOSFET IRF640 80 watt as switch power MOSFET IRF640 80 watt PHILIPS toroidal core 3c85
1999 - power MOSFET IRF640 80 watt

Abstract: OSCON 6SH330M power MOSFET IRF640 80 watt as switch Snubber circuits theory, design and application SEM-700 Closing The Feedback Loop FERRITE TRANSFORMER 20khz toroid unitrode SEM-1100 CTX08-13916 IGBT gate optocoupler driver for a buck converter 3C85 toroid
Text: R8 0.15 3W Q3 IRF640 TP5 5:1 T1 80µH C23 6800pF C15 0.015µF D3 SF24 3 , calculates to be 160V. An IRF640 N-channel power MOSFET was chosen. This device has a voltage rating of , conduction losses (12) and the switching losses (14), calculated to be 3.3W for the IRF640 FET used on the , due to excessive heating. The IRF640 has a junction to case thermal resistance, qjc, of 1°C/W, using , of less than 125°C. The output capacitors are also chosen based upon their low equivalent series


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PDF U-165 UCC3809 UC3965 power MOSFET IRF640 80 watt OSCON 6SH330M power MOSFET IRF640 80 watt as switch Snubber circuits theory, design and application SEM-700 Closing The Feedback Loop FERRITE TRANSFORMER 20khz toroid unitrode SEM-1100 CTX08-13916 IGBT gate optocoupler driver for a buck converter 3C85 toroid
irf740 switching 3 phase motor driver

Abstract: IRF510 SEC mosfet h-bridge power MOSFET IRF740 working of mosfet IRF450 snubber circuit for mosfet push pull IRF640 mosfet transistor equivalent irf740 VDMOS reliability testing report transistor IRF740 IRF540 complementary
Text: operation lends itself to straightforward electrical equivalent circuits. The device is composed of , overlay in Figure 2a identifies the lumped equivalent circuit components. Figure 2b shows the lumped , IH (A) Figure 2. Lumped Equivalent Circuit Components 742 * ELECTRONICS DESIGN RELIABILITY , IRF840 IRF450 IRF640 Conclusions 5.4 4.2 5.5 3.7 3.7 5.8 4.2 3.4 5.3 4.3 3.7 3.2 5.0 80 45 120 60 , . Selected MOSFET(s) SPECIFICATION IRF640 Ruggedness Reverse DC Ratings Recovery du/dl Rating v *. Rds (on


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1999 - PHB27NQ10T

Abstract: BYC05B-600 PHB23NQ10T PHP18NQ10T byc10-600 equivalent byv26 equivalent Msd119 phw7n60 sod 100d BYC08-600
Text: . WWW.SEMICONDUCTORS.PHILIPS.COM/SILICONMAX Philips PHP18NQ20T IRF640 SiliconMAXTM: taking TrenchMOS technology to the , IRF640 0 time (50 ns/div) time (50 ns/div) QGD comparison for a 100 V Philips TrenchMOS and a , PHP7N60E PUTTING THE MAX IN YOUR PACKAGE ­ WITH THE EQUIVALENT RDS(on) 30 competitor 1 competitor 2


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PDF M3D306 O220AB O220AC O22OAB 30EX-150 BYQ30EX-200 BYV32EX-150 BYV42EX-150 BYV32EX-200 BYV42EX-200 PHB27NQ10T BYC05B-600 PHB23NQ10T PHP18NQ10T byc10-600 equivalent byv26 equivalent Msd119 phw7n60 sod 100d BYC08-600
IRL734

Abstract: 1RF620 IRZ14 Diode c 642
Text: capacitor's charge-dlscharge current and Its Equivalent Series Resistance (ESR). With low-cost aluminum elec , IRF513 IRF530 IRF540 1RF620 IRF640 PKG. 4p DIP TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 Ron AT (I , g s = X) 0 .8 5 fi (1 2 .5 A ,5 V ) 0.20Q (6A, 5V) 0.14ß(7.5A , 5V) 0 .1 1 iì (24A, 4V) 0.3Q (7.8A, 4V) 0.07Í2 (23A, 4V) 0 .1 fi (1 2 .5 A , 5V) 0 .1 5 ii(7 .5 A , 5V) 0.18Í2(6A, 5V) V(MAX) 50 100 50


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PDF MAX641/MAX642/MAX643 MAX641/642/643 MAX643XCPA MAX643XCSA MAX643XC/D MAX643XEPA MAX643XESA MAX643XEJA MAX643XMJA IRL734 1RF620 IRZ14 Diode c 642
FL110

Abstract: LL110 irf7408 IRC540 equivalent lr014 IRL1Z14G IRFC024 IRFBE30 equivalent irfbc10lc IRFCG50
Text: IRF640 IRF614 IRF624 IRF634 IRF644 IR F710 IRF720 IRF730 IRF740 IRF820 IRF734 IRF744 IRF830 IRF840 , 0.30 0.30 0.30 0.25 0.25 0.25 0.64 0.51 0.51 0.51 0.51 0.51 0.51 0.25 0.25 0.25 Equivalent Device , IRFZ48 IRF540 IRF640 IRF644 IRF740 IRF840 IRFP448 IRFBC40 IRFPE40 IRFPF40 IRFPG40 IRFP054 IRFP150 IRFP250 , Equivalent Device Type P-Channel HEXFETs 1 1 1 2 2 2 3 3 3 4 4 4 IRFC9014 IR FC 9 110 IRFC9210 IRFC9024 , 0.64 0.51 0.51 0.51 0.51 0.51 Equivalent Device Type IRCZ24 IRCZ34 IRC530 IRC630 IRC634 IRC730


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PDF OT-89 OT-89 IRCC044 IRCC140 IRCC240 IRCC244 IRCC340 IRCC440 IRCC054 FL110 LL110 irf7408 IRC540 equivalent lr014 IRL1Z14G IRFC024 IRFBE30 equivalent irfbc10lc IRFCG50
1994 - IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application HTGB IRD110
Text: equivalent of 4.68 billion device-hours at a junction temperature of 90OC (see sections 4.1.1, 4.1.7, 4.2.1 , stress have accumulated the equivalent of over 50 billion device-hours at a junction temperature of 90OC , IRF624S IRF630 IRF630S IRF634 IRF634S IRF640 IRF640S IRF644 IRF644S IRF710 IRF710S IRF720 IRF720S IRF730 , 3.3.5.1 Generation 3, Logic Level # of Total Failures Modes Equivalent lots Qty Device Hours Tj = 90°C; Vg , lots 2 3.3.5.6 # of lots 25 Total Qty 2366 Generation 5, N-Channel, Standard Device # Modes Equivalent


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PDF O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application HTGB IRD110
Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 BUZ41 equivalent transistor f630 Diode BYW 56
Text: -233, IRF630-633, MTP12N18, MTP12N20 IRF240-243, IRF640 -643 IRF250-253 IRF320-323, IRF720-723, MTP3N35, MTP3N40 , IRF632 IRF633 IRF640 IRF641 IRF642 IRF643 IRF710 IRF711 IRF712 IRF713 IRF720 IRF721 IRF722 IRF723 IRF730 , IRF721 IRF723 MTP3N35 IRF711 IRF713 MTP2N35 IRF640 IRF642 MTP12N20 IRF630 IRF632 Page Number 2-138 , IRF831 IRF830 IRF841 IRF840 FMP18N05 FMP18N05 IRF530 IRF540 IRF540 IRF130 IRF150 IRF140 IRF632 IRF640 , D86FR2 IRFZ20 IRFZ22 Fairchild Part No. IRF830 IRF541 IRF541 MTP4N08 IRF540 IRF641 IRF641 IRF640 IRF640


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PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 BUZ41 equivalent transistor f630 Diode BYW 56
1RFZ40

Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent MFE9200 MTP40N06M buz90 equivalent MTH7N50
Text: ) Table 2 — N-Channel 14E D I b3b7254 000=5380 fi T-97-60 NEW NEW V(BR)DSS (Volts) Min DS(on) @ 'O , €¢ 3-714 0.22 10 IRF642 16 125 3-129 0.18 IRF640 18 3-129 150 0.8 2.5 IRF621 4 40 3-125 0.4 5 , Indicata« new product. Noto: All ol these devices can bo purchased with JTX or JTXV equivalent processing


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PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent MFE9200 MTP40N06M buz90 equivalent MTH7N50
MFE9200

Abstract: BUZ84A IRF150 MOSFET AMP circuit BUZ90 equivalent MTP40N06M BUZ35S IRFZ22 mosfet MTP25N10E MTM12N10L 1RF620
Text: By Its Respective Manufacturer ime o I b3b7astt cma^ao fi | T-97-60 V(BR)DSS (Volts) Min US(o , - MTP12N20 ■12 - 100 - 3-714 0.22 10 IRF642 16 125 3-129 0.18 IRF640 18 3-129 150 0.8 2.5 IRF621 4 , JTX or JTXV equivalent processing by adding HX or HXV suffix to device type. MOTOROLA TMOS POWER


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PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A IRF150 MOSFET AMP circuit BUZ90 equivalent MTP40N06M BUZ35S IRFZ22 mosfet MTP25N10E MTM12N10L 1RF620
3C85 toroid

Abstract: unitrode SEM-1100 CTX08-13916 Snubber circuits theory unitrode manual sem-900 Philip C. Todd Lloyd H. Dixon Snubber circuits theory, design and application Lloyd H. Dixon, Jr u165d
Text: ), calcu lated to be 3.3W for the IRF640 FET used on the demo board. Without appropriate heatsinking, this , perature, Tj, from exceeding 150®G and avert de vice failure due to excessive heating. The IRF640 has a , equivalent series resistance (ESR), ripple current and voltage ratings, and (16). The ripple current that the , to the primary side and calcu late the equivalent slope voltage at the sense re sistor in volts per , -14017 MPS2222A MPS2907A Motorola or IR IRF640 3-815 APPLICATION NOTE Référencé Designator R1 R2


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PDF U-165 UCC3809 UC3965 U-137, U-111, SEM-700, 3C85 toroid unitrode SEM-1100 CTX08-13916 Snubber circuits theory unitrode manual sem-900 Philip C. Todd Lloyd H. Dixon Snubber circuits theory, design and application Lloyd H. Dixon, Jr u165d
IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 IRFC9140R AN964
Text: limitations when electrically probing in wafer form, some of the generic specifications of the equivalent , design to meet the specifications of the equivalent part: gfs, CjSS, C0ss> crss> and Tj(max) for HEXFET , grade electronic coating such as Dow Corning RTV3140 or equivalent may be applied. If the package is , 16 0.012/0.305 0.005/0.127 irf640 pd-9.374 4 irfc244r * 250 0.280 16 0.012/0.305 0.005/0.127 irf644 , Emitter Gate Number V fi in/mm in/mm O IRGCC20 600 4.0 39 0.012/0.305 0.005/0.127 IRGBC20 PD


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PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 IRFC9140R AN964
1994 - IRFIBC44LC

Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
Text: individual test data by part type. HTRB A total of 16,158 devices have accumulated the equivalent of 4.47 , devices on long term gate stress have accumulated the equivalent of over 40 billion device-hours at a , Equivalent lots Qty Device Hours Tj = 90°C; Vg = 12V/6V 9 1072 0 1.35E+10 FITs @ 90°C & 60% UCL , Modes Equivalent Failures Device Hours Tj = 90°C; Vg = 12V/6V 8 C,V,L 2.25E+10 FITs @ 90°C & 60% UCL 0.42 Generation 3, N-channel, Low QG # Modes Equivalent Failures Device Hours Tj =


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LFB360230-300

Abstract: LFB360230 HP16092A
Text: DETAIL "A" RADIUS SCALE=3:1 SCALE DRAWING 1:1 SEE DETAIL "A" UNCONTROLLED DOCUMENT LFB360230—300 IMPEDANCE f Z ì NET SEE NOTE 1 Z vs. FREQUENCY 1 TURN, 2, AND 3 TURNS (REF. ONLY) FREQUENCY NOMINAL (REF.) 1 TURN MINIMUM (SPEC.)i TURN NOMINAL (REF.) 2 TURNS NOMINAL (REF.) 3 TURNS 500 KHz 1 MHz 5 MHz 24 fi 27 fi 19 fi — fi 22 fi — fi 96 fi 110 fi 75 fi 217 fi 247 fi 168 fi 300 TEST CRITERIA METER FIXTURE HP4396A OR EQUIVALENT HP16092A OR EQUIVALENT 0.10 1.00 FREQUENCY (MHz


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PDF LFB360230â HP4396A HP16092A 6092A WEIGHT/1000 500KHz& LFB360230-300â LFB360230-300 LFB360230
B1141

Abstract: HP16092A LFB2901 LFB290190 LFB290190-000 Laird ferrite
Text: .) 2 TURNS NOMINAL (REF.) 3 TURNS IMPEDANCE ( Z ) NETSEE N0TE 1 500 KHz 1 MHz 5 MHz 19 fi 34 fi 22 fi — fi 25 fi — fi 90 fi 155 fi 70 fi 200 fi 355 fi 200 fi TEST CRITERIA METER HP4396A OR EQUIVALENT FIXTURE HP16092A OR EQUIVALENT FREQUENCY (MHz) AGILENT E4991A RF Impedance/Material Analyzer HP


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PDF LFB290190-000 HP4396A HP16092A E4991A 6092A WEIGHT/1000 LFB2901 LFB290190â B1141 B1141 LFB290190 LFB290190-000 Laird ferrite
LFB143064-000

Abstract: HP16092A LFB143064
Text: SEE DETAIL A SCALE DRAWING 1:1 LFB143064-000 SECTION A-A Z vs. FREQUENCY 1 TURN, 2, AND 3 TURNS (REF. ONLY) s* w DETAIL A CHAMFER SCALE=9:1 1200 1000 800 600 400 200 0 FREQUENCY NOMINAL (REF.) i TURN MINIMUM (SPEC.)i TURN NOMINAL (REF.) 2 TURNS NOMINAL (REF.) 3 TURNS IMPEDANCE ( Z ) NETsee note 1 500 KHz 1 MHz 5 MHz 70 Q 122 fi 120 fi _ fi 97 fi - fi 290 fi 490 fi 480 fi 650 fi 1100 n 1080 fi TEST CRITERIA METER FIXTURE HP4396A OR EQUIVALENT HP16092A OR EQUIVALENT UNCONTROLLED


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PDF LFB143064-000 HP4396A HP16092A E4991A 6092A WEIGHT/1000 LFB143064â B0562 LFB143064-000 LFB143064
LFB159079-000

Abstract: B0625 HP16092A LFB159079
Text: SEE DETAIL SCALE DRAWING 1:1 LFB159079-000 SECTION A-A Z vs. FREQUENCY 1 TURN, 2, AND 3 TURNS (REF. ONLY) DETAIL "A" CHAMFER SCALE=9:1 FREQUENCY NOMINAL (REF.) 1 TURN MINIMUM (SPEC.)i TURN NOMINAL (REF.) 2 TURNS NOMINAL (REF.) 3 TURNS IMPEDANCE ( Z ) NETsee note 1 500 KHz 1 MHz 5 MHz 61 Q 105 fi 100 n — fi 84 fi — fi 250 fi 410 fi 390 fi 570 fi 920 fi 880 fi TEST CRITERIA METER HP4396A OR EQUIVALENT FIXTURE HP16092A OR EQUIVALENT UNCONTROLLED DOCUMENT FREQUENCY (MHz) AGILENT E4


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PDF LFB159079-000 HP4396A HP16092A E4-991A 6092A WEIGHT/1000 LFB159079â B0625 LFB159079-000 B0625 LFB159079
LFB143064-100

Abstract: LFB143064 HP16092A LFB143064-100-D
Text: SCALE DRAWING 1:1 SEE DETAIL A UNCONTROLLED DOCUMENT LFB143064-100 SECTION A-A Z vs. FREQUENCY 1 TURN, 2, AND 3 TURNS (REF. ONLY) DETAIL "A" CHAMFER SCALE=9:1 FREQUENCY NOMINAL (REF.) 1 TURN MINIMUM (SPEC.)i TURN NOMINAL (REF.) 2 TURNS NOMINAL (REF.) 3 TURNS IMPEDANCE ( Z ) NETsee note 1 500 KHz 1 MHz 5 MHz 33 Q 57 fi 53 n — fi 45 fi — fi 145 fi 220 fi 215 fi 325 fi 500 fi 475 fi TEST CRITERIA METER FIXTURE HP4396A OR EQUIVALENT HP16092A OR EQUIVALENT FREQUENCY (MHz) AGILENT E4-991A RF


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PDF LFB143064-100 HP4396A HP16092A E4-991A 6092A WEIGHT/1000 LFB143064-100-D B0562 LFB143064-100 LFB143064 LFB143064-100-D
1998 - 2SB1295

Abstract: LA4587M 32 chanels audio amplifier circuit diagram nfc2
Text: equivalent Pre + VREF Supply voltage, VCC - V Supply voltage, VCC - V VOUT - VCC VOUT - fi , ) Voltage gain (closed) Maximum output voltage Total harmonic distortion Equivalent input noise voltage , Application Circuit Unit (resistance: , capacitance: F) Note 1: Transistors equivalent to the 2SB1295 with , H.P2 14 L.P2 Remarks POWER NF REFC 12 Internal equivalent circuit POWER OUT2 3 , voltage [V] 0.75 Internal equivalent circuit Remarks c Low boost amplifier NF connection


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PDF EN5204A LA4587M LA4587M 3102-QIP48D LA4587M] 2SB1295 32 chanels audio amplifier circuit diagram nfc2
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