The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC5100EUFTR Linear Technology Laser Driver VCSEL 3.2Gbps 1-CH 16-Pin QFN EP T/R
TIL601 Texas Instruments TIL601 N-P-N Planar Silicon Phototransistors
TIL603 Texas Instruments TIL603 N-P-N Planar Silicon Phototransistors
TIL604 Texas Instruments TIL604 N-P-N Planar Silicon Phototransistors
TMS27C240-15JL Texas Instruments 4 194 304-Bit Programmable Read-Only Memory 40-CDIP 0 to 70
TMS417400A-60DR Texas Instruments TMS417400A 4 194 304-WORD BY 4-BIT PAGE-MODE DRAM

emitter phototransistor til 194 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Til 160

Abstract:
Text: TYPICAL CHARACTERISTICS TIL 111, TIL114 collector current vs collector emitter voltage Iß = 0 Ta = , TIL111, TIL114, TIL 116, TIL117 OPTOCOUPLERS SOOS040 D1607, NOVEMBER 1973—REVISED FEBRUARY , Optically Coupled to a Silicon N-P-N Phototransistor • High Direct-Current Transfer Ratio â , Infrared-emitting diode and an npn silicon phototransistor mounted on a 6-lead frame encapsulated within an , connection 4 Emitter £ Collector 6. Base } I nfrared-emitting diode Phototransi&tor FALLS WITHIN JEDEC


OCR Scan
PDF TIL111, TIL114, TIL117 SOOS040 D1607, Til 160 TIL111 TIL116 d1607 752a5 TIL114 TIL117
texas diode opto TIL 09

Abstract:
Text: Optically Coupled to a Silicon N-P-N Darlington Phototransistor No Base Lead Connection on TIL 190 for High-EMI Environment UL Recognized — File #E65085 The TIL 1 89 and TIL 1 90 Opto couplers are designed , $ 3. No internal connection 4. Emitter i 5. CûllectOf > Phototransistor 6. TILT 89. Base 1 TIL190: No internal connection TIL 169 FALLS WITHIN JEDEC MO-OOIAM DIMENSIONS ALL LINEAR DIMENSIONS ARE , base-noise immunity is desired. Users can select from four different current gains (T1L189-1 through TIL 1 89


OCR Scan
PDF TILt89-1 T1L189-4 TIL1901 SOQS03SA D2987, E65085 TIL189 texas diode opto TIL 09 til 701 D2987 til 081 TIL190-1 til-169 Til 160 tl 701 phototransistor TIL 51 3701b
til167

Abstract:
Text: Phototransistor • High Direct-Current Transfer Ratio . . . 300% Minimum at 10 mA • Plug-In Replacement for , phototransistor mounted on a 6-lead frame encapsulated within an electrically nonconductive plastic compound. The , connection 4 Emitter 5. Collector 6. TIL156 base TIL1 57A no internal connection > } Infrared-emitting diode Photo-transistor FALLS WITHIN JEDEC MO-OOIAM DIMENSIONS ALL LINEAR DIMENSIONS ARE IN MILLIMETERS , ) .2500 V Collector Base Voltage ( TIL 156


OCR Scan
PDF SOOSD47A 0249S, 1978-HEVISÃ E65085 TIL113 TIL119A TIL157A til167 TIL167A TIL119A fa8kdown phototransistor TIL156
GS-2020

Abstract:
Text: SILICON PHOTOTRANSISTOR "GLASS-STICK" 61054 (TYPE GS 2020) GENERAL DESCRIPTION OPTOELECTRONIC PRODUCTS DIVISION ma GLASS HERMETIC PACKAGE DOME LENS Mii 61054 is an N-P-N Silicon Phototransistor , 5 V * H = 9 mW/cm* t 'L mA MAX DARK CURRENT VCE = 30 V H=0 ID nA MAX COLLECTOR EMITTER BREAKDOWN , 2020-4 ( TIL 401) GS 2020-5 ( TIL 402) GS 2020-6 ( TIL 403) GS 2020-7 ( TIL 404) GS 2020-8 ( TIL 405) GS 2020-9 ( TIL 406) 1.0 1.0 1.0 0.5 2.0 5.0 8 .0 3.0 3.0 - 100 25 25 25 25 25 25 25 25 25 50


OCR Scan
PDF MIL-S-19500 GS-2020 TIL403
D1499

Abstract:
Text: Phototransistor High Direct-Current Transfer Ratio . . . 300% Minimum at 10 mA High-Voltage Electrical isolation , photo-transistor mounted on a 6-lead frame encapsulated within an electrically nonconductive plastic compound. The , wti iCl DO t lt* Anode Cathode No internal connection > Infrared-emitting diode Emitter , . Infrared-Emitting Diode (See Note 3) .150 mW Phototransistor ISee Note 41.150 mW Total llnfrared-Ermtting Diode plus Phototransistor , See Note 5). 250 mW Storage


OCR Scan
PDF TIL113, D1499. 1500-Voit TIL113 TIL119A D1499 TRIAC tag l8 T1L113 TRIAC TAG h7 TRIAC TAG J TRIAC TAG 90 tl113 H303
emitter phototransistor til 194

Abstract:
Text: INPUT OPTOCOUPLERS schematic diagrams TIL 194 (TOP VIEW) A/K -K/A — b 1 A/K 1C 1 A,'K 1E 1 K/A , Infrared Source • Source Is Optically Coupled to Silicon N-P-N Phototransistor • Choice of One, Two , configuration for ac-input applications and a silicon n-p-n phototransistor per channel. The TIL194 has one , ) . ±50 mA Continuous power dissipation at lor below) 25 DC free-air temperature: Phototransistor (see Note 4). 1 50 mW Input diode plus phototransistor per


OCR Scan
PDF TILI94. TIL195, TIL196, TIL194A, TII195A, TIL196A TIL194B, TIL195B, TIL196B D32B7 emitter phototransistor til 194 TIL194A TIL196A TIL196 TIL195B TIL195 TIL194B TII195A HTI 2E
Not Available

Abstract:
Text: 'L 'D UNIT mA MIN COLLECTOR EMITTER BREAKDOWN BREAKDOWN LIGHT CURRENT RISE TIME , GS 2020-3 (LS 400) 1.0 - 25 50 6 2.5 0.3 15 GS 2020-4 ( TIL 401) 0.5 3.0 25 50 6 2.5 0.3 15 GS 2020-5 ( TIL 402) 2.0 6.0 25 50 6 2.5 0.3 15 GS 2020-6 ( TIL 403) 5.0 10 25 50 6 2.5 0.3 15 8.0 16 25 , 15 GS 2020-7 ( TIL 404) GS 2020-8 ( TIL 405) 10 GS 2020-9 ( TIL 406) 15 * Irradianco in


OCR Scan
PDF 1000Q
Not Available

Abstract:
Text: Phototransistor in a small diameter hard glass package. The dome-shaped lens is flame formed and has a small , CURRENT COLLECTOR EMITTER BREAKDOWN BREAKDOWN TEST CONDITION VCE = 5 V * H = 9 mW /cm* t , GS 2020-3 (LS 400) 1.0 - 25 50 6 2.5 0.3 15 GS 2020-4 ( TIL 401) 0.5 3.0 25 50 6 2.5 0.3 15 15 GS 2020-5 ( TIL 402) 2.0 25 50 6 2.5 0.3 GS 2020-6 ( TIL 403) 5,0 10 25 50 6 2.5 0.3 15 GS 2020-7 ( TIL 404


OCR Scan
PDF 00D0321
TIL112

Abstract:
Text: ) ) K NC Emitter Collector Base Output npn Phototransistor 5-30 Typical Electrical H11D1, H11D2 , 16 0.4 TIL115 Trans 250 — 20 3.0 100 2.5 2.0 10 5.0 TIL 116 Trans 250 — 30 3.0 100 2.5 5.0 10 , MCT26 2.5 2.5 1.4 16 0.4 2.0 16 5-40 TIL 111«) 15.0 15.0 1.4 16 0.5 2.0 50 5-43 TIL 112 50 50 1.5 10 1.0 125 50 0.1 10 5-45 TIL 113«) 2.0 2.0 1.4 16 0.4 2.0 16 5-40 TIL114<3) 15.0 15.0 1.5 10 0.5 2.0 50 5-43 TIL115 2.0 2.0 1.5 60 0.4 2.2 15 5-40 TIL116 2.0 2.0 1.4 16 0.4 0.5 10 5-40 TIL 117


OCR Scan
PDF H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 H11D1, H11D2, TIL112 MCA255 IR diode til
TIL126

Abstract:
Text: a Silicon N-P-N Phototransistor • High Direct-Current Transfer Ratio • High Voltage Electrical , infrared emitting diode and an n-p-n silicon phototransistor mounted on a 6-lead frame encapsulated within , 4. emitter b. Collector 6, Base > rl > I pf rared'en diotie it tinq PhDtotrinimor FALLS , 7 V Emitter Base Voltage .7 V Input-Diode Reverse Voltage , ) .150 mW Phototransistor (See Note 3).150 mW Total. Infrared-Emitting


OCR Scan
PDF TIL124, TIL125, TIL126 300S044 000-V TIL125 LI26 TIL124
TIL402

Abstract:
Text: General Sensors' Type GS 2020 is an N-P-N Silicon Phototransistor in a small diameter hard glass package , 5 V * H = 9 mW/cm* t lL wA DARK CURRENT VCE = 30 V H=0 ID nA COLLECTOR EMITTER BREAKDOWN , 2020-1 GS 2020-2 GS 2020-3 (LS 400) GS 2020-4 ( TIL 401) GS 2020-5 ( TIL 402) GS 2020-6 ( TIL 403) GS 2020-7 ( TIL 404) GS 2020-8 ( TIL 405) GS 2020-9 ( TIL 406) Short Case GS 2020-11 GS 2020-12 1.0 1.0 1.0 0.5 , J b l l S b M O GS 2020 SILICON PHOTOTRANSISTOR ABSOLUTE M AXIM UM RATINGS w c f r e e a ir


OCR Scan
PDF D0D03H1 TIL402 TIL406 TIL405
optocouplers 501

Abstract:
Text: * Source Is Optically Coupled to Silicon N-P-N Darlington Phototransistor • Choice of One, Two or Four , consist of a gallium-arsenide light-emitting diode and a silicon n-p-n Darlington phototransistor per , TIL 1 97 TILI 98 PIN 1 TIL199 PIN 1 3 30 IO, 1301 "y 0,51 ID 125) 5,84 10.2301 MAX MIN 1 21.1 , voltage (see Note 2) . 35 V Emitter collector , dissipation at (or below) 25°C free-air temperature: Phototransistor (see Note 4


OCR Scan
PDF TILI97, TILI98, TIL199, TIL197A, TIL198A, TILI199A TILI97B, TIL198B, TIL199B D3437. optocouplers 501 optocouplers from texas instruments 6M303 TIL99 D3437 AACE QUAD Phototransistor Optocouplers TILI199A TIL197B TIL198A
Phototransistor til 81

Abstract:
Text: SILICON PHOTOTRANSISTOR 61058 (TYPE GS 4021) | l ff _lJ l l 7 m O P T O E LE C TR O N IC - PRODUCTS D IV IS IO N GENERAL DESCRIPTION (REPLACES TIL 81) HIGH SENSITIVITY TO -46 HERMETIC PACKAGE Mii 61058 is an N-P-N Silicon Phototransistor in a lensed TO-46 three-lead package. It is , EMITTER BREAKDOWN LIGHT CURRENT RISE TIME lc = 100 |iA lE = 100pA I|_ = 1mA Rl = 100Q lc , ) 487-6918 5-14 ■I bllE bM O □ □ □ lab ? T71 ■SILICON PHOTOTRANSISTOR , TYPE


OCR Scan
PDF MIL-S-19500. Phototransistor til 81 ir 4021
photo transistor til 78

Abstract:
Text: connection 4. Emitter j 5 Collector > Phoiotrans'sioi 6 TIL 1 87. Base J TfL!B0 No internal connection , Source Optically Coupled to a Silicon N-P-N Darlinaton Phototransistor • Plastic Dual-ln-Line Package , ' 55 v Min • UL Recognized - File #E65085 • IMo Base Lead Connection on TIL 188 for High-EMI Environment description The TIL187 and TIL 188 Optocouplers are designed for use in AC applications that , ±3.535 kV peak or dc (±2.5 kV rmsl Collector-base voltage ( TIL 1871


OCR Scan
PDF TIL188-4 SOOSQ12A D29BO. E65085 TIL187 photo transistor til 78 Transistor AC 187 transistor tl 187 AC 187 npn transistor TO 1 E65085 TL 187 TRANSISTOR NPN TIL188 Til 160
Not Available

Abstract:
Text: to Silicon N-P-N Darlington Phototransistor Choice of One, Two or Four Channels Choice of Three , light-emitting diode and a silicon n-p-n Darlington phototransistor per channel. The TIL197 has one channel in a , /DUAUQUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS schematic diagrams TIL .197 A T IL 198 T IL 199 absolute , ) . 50 mA Continuous power dissipation at (or below) 25°C free-air temperature: Phototransistor (see , ) . 150mW Input diode plus phototransistor per channel (see Note 5


OCR Scan
PDF TIL197, TIL198, TIL199, TIL197A, TILI98A, TILI199A TIL197B, TIL198B, TIL199B E65085
D1499

Abstract:
Text: Diode Infrared Source Optically Coupled to a Silicon N-P-N Darlington-Connected Phototransistor High , arsenide infrared-emitting diode and an n-p-n silicon darlington-connected photo-transistor mounted on a 6 , 3. No interna! connection îiTTBÎroSÎ* I* — I I (0 ,00) T f -, 4. Emitter 5. Collector 6. TIL113 base TIL119A no internal connection Ì Photo-transistor FALLS WITHIN JEDEC M0-001 AM DIMENSIONS ALL , Temperature: Infrared-Emitting Diode (See Note 3). . . . 150 mW Phototransistor (See Note


OCR Scan
PDF TIL113, TIL119A D1499, 1981-REVISED 1500-Volt TIL113 D1499 emitter phototransistor til 31 TL113
D232B

Abstract:
Text: internal connection 4. Emitter 5. Collector 6. TIL127: Base TIL 128A: No internal connection > } Infrared-emitting diode Photo-transistor ALL LINEAR DIMENSIONS ARE JN MILLIMETERS AND PABENTHETICALLV IN INCHES , Diode Infrared Source Optically Coupled to a Silicon N-P-N Darlington-Connected Phototransistor High , infrared-emitting diode and an n-p-n silicon phototransistor mounted on a 6-lead frame encapsulated within an , °C Free-Air Temperature: Infrared-Emitting Diode ISee Note 2).150mW Phototransistor


OCR Scan
PDF T1L12IA D232B, 1977-REVISED 5000-Volt TIL128A D232B GS5303 aot 127 GS53 infrared-emitting NA TRANSISTOR TIL127
Not Available

Abstract:
Text: phototransistor m ounted sid e by sid e in a black plastic housing. The on-axis radiation of the emitter and the , phototransistor responds to radiation emitted from the diod e only w hen a reflective object or surface is in the , (0.51) S Q NOM 4 PLCS .500 (12.7) MIN iff 2 I 3 Phototransistor output. U nfocused for se , non-contact surface sensing. .100 (2.54) . lì Til -1 2 > NOTE [-.0 8 3 (2.11) ^ 3 ST2172


OCR Scan
PDF QRD1113/1114 QRD1113/1114
transistor TE 901

Abstract:
Text: Source Optically Coupled to a Silicon N-P-N Darlington Phototransistor No Base Lead Connection on TIL 19 , . Users can select from fo u r d iffe re n t c urrent gains ( TIL 189-1 throug h T IL 1 8 9 -4 and TIL190 , . Terminal connections: 1. Anode Infrared-em itting diode 2. Cathode 3. No internal connection 4. Emitter 5. Collector Phototransistor 6. TIL189: Base TIL189 TIL190: No internal connection \ FALLS WITHIN JEDEC M , 1 8 9 -1 , TIL 190-1 P hoto O n-state transistor 'Cion) collector operation current T IL 1 8 9 -2


OCR Scan
PDF TIL190-4 TIL189 TIL189-1 TIL189-4 TIL190-1 transistor TE 901
TIL81

Abstract:
Text: SILICON PHOTOTRANSISTOR 61058 (TYPE GS 4021) GENERAL DESCRIPTION (REPLACES TIL 81) OPTOELECTRONIC PRODUCTS DIVISION ma HIGH SENSITIVITY TO-46 HERMETIC PACKAGE Mii 61058 is an N-P-N Silicon Phototransistor in a lensed TO-46 three-lead package. It is available in a range of sensitivities , COLLECTOR BREAKDOWN lc EMITTER BREAKDOWN lE = 100nA LIGHT CURRENT RISE TIME lL = 1mA Rl = 100£2 Vcc , SILICON PHOTOTRANSISTOR , TYPE GS 4021, Continued 61058 SILICON PHOTOTRANSISTOR ABSOLUTE MAXIMUM


OCR Scan
PDF MIL-S-19500. TIL81 Phototransistor til 81 TIL 81 ir 4021 Phototransistor 4021
Not Available

Abstract:
Text: Phototransistor · High Direct-Current Transfer Ratio . . . 300% Minimum at 10 mA · Plug-In Replacement for TIL113 , TIL 157A for Environments with High Electromagnetic Interference mechanical data The package consists , phototransistor m ounted on a 6-lead frame encapsulated w ith in an electrically nonconductive plastic com pound , grams. s 2 . Cathode 3. No internal connection Emitter Collector TIL1 5 6 base T IL 1 5 7 A no , ) . 100 m A Continuous Phototransistor Power Dissipation at (or below) 25°C Free-Air Temperature


OCR Scan
PDF TIL157A 1978-REVISED TIL113 TIL119A TIL156,
4n35 optocoupler spice model

Abstract:
Text: ) Aperture Width (mm) BVCEO (V) Min Output 30 Phototransistor Emitter Sensor Gap Width , Conditions IF (mA) Aperture Width (mm) Emitter Sensor Gap Width (mm) Phototransistor 1.27 , 30 Emitter Sensor Gap Width (mm) Phototransistor 2.0 2.0 3.81 Slotted Switch , Phototransistor QSC113 5 0.5 880 AlGaAs 2.40 9.60 30 100 Phototransistor QSC114 5 0.5 880 AlGaAs 4.00 ­ 30 100 Phototransistor T-13/4 (5 mm) Detector Package


Original
PDF TS-16949 ISO-14001, 4n35 optocoupler spice model L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL MOC3010 spice h11D1 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
a36 smd transistor

Abstract:
Text: APPROVED PHOTOTRANSISTOR OPTOCOUPLERS < != > CNY17-1/1Z CN Y17-3/3Z C N Y17-2/2Z CN Y17-4/4Z , datasheet 1.78 REF &38 -J Li I2-54! TYP -f ■t.78 TYP til L3.05 0.51 MIN 0.88 , hre 100 Breakdown voltage Collector to emitter BV ceo 70 V lo = 1 .0 mA, lF= 0 Collector to base BVcso 70 V lo = 10 //A, lF= 0 Emitter to collector Leakage current C ollector to emitter BV^co 7 V Ie= 10 0/jA , If = 0 50 nA V c£ = 10 V, lF= 0


OCR Scan
PDF bfl51 CNY17-1/1Z Y17-3/3Z Y17-2/2Z Y17-4/4Z CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: a36 smd transistor transistor smd 4z
D2980

Abstract:
Text: Coupled to a Silicon N-P-N Darlington Phototransistor Plastic Duai-ln-Llne Package High-Voltage Electrical , in a reverse-parallel configuration and a silicon n-p-n Darlington phototransistor . The TIL187 has , . Terminal connections: 1. Input > 2. Input > 3. No internal connection 4. Emitter i 5. Collector > Phototransistor 6. TILI 87: Base ) TILI 88: No internal connection Infrared-emitting diode TIL187 FALLS WITHIN , ). 150 mV Phototransistor (see Note 3) . 150 mV Total


OCR Scan
PDF D2980, 1987-REVISED E65085 TIL188 TIL187 D2980 emitter phototransistor til 31 NA TRANSISTOR TIL187-1 TIL187-4 TIL188-1 TIL188-4
CT1031

Abstract:
Text: Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The TCMT1030 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8 , l! lp = 1 mA rl A Absolute Maximum Ratings Input ( Emitter ) Parameters Reverse voltage Forward , ) Parameters Collector base voltage Collector emitter voltage Emitter collector voltage Collector currenl , Input ( Emitter ) Parameters Forward voltage Breakdown voltage Junction capacitance _Ci Output


OCR Scan
PDF TCMT1030 14-Jun-96 CT1031 t50-01 t5001
Supplyframe Tracking Pixel