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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
2716020 Phoenix Contact Modular Terminal Block, 32A, 4mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT
2716774 Phoenix Contact Terminal Block Accessory
2716376 Phoenix Contact Modular Terminal Block, 24A, 4mm2, 3 Row(s), 3 Deck(s), ROHS COMPLIANT
2716949 Phoenix Contact Terminal Block Accessory, Seperating Plate,
2716127 Phoenix Contact Strip Terminal Block, 32A, 4mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT
2716648 Phoenix Contact Terminal Block Accessory

eeprom 2716 Datasheets Context Search

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krone

Abstract: DS1855E-010 DS1855B-100 DS1855B-050 DS1855B-010 DS1855-100 DS1855-050 DS1855-020 DS1855 DS1845
Text: PRODUCT DESCRIPTION The DS1855 combines two potentiometers and 248 bytes of user EEPROM memory with a , one 100k, 256 position) 256 bytes of EEPROM memory Access to data and potentiometer control via a 2 , potentiometer, one 256-position linear taper potentiometer, 256 bytes of EEPROM memory, and a 2-wire interface , circuitry. The EEPROM memory allows a user to store configuration or calibration data for a specific system , information may reside in the first 248 bytes of this memory. The next two addresses of EEPROM memory are for


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PDF DS1855 DS1855 100up DS1855B-010 DS1855B-050 DS1855B-100 DS1855E-010 Ds1855E-050 DS1855E-100 DS1855E-010/T krone DS1855E-010 DS1855B-100 DS1855B-050 DS1855B-010 DS1855-100 DS1855-050 DS1855-020 DS1845
intel 2816 eeprom

Abstract: 2816 EEPROM B 2716 D EEPROM intel 2716 eprom intel 2816 eeprom 2816 eprom 2716 INTEL D 2816 eeprom 2716 intel 2716 eprom
Text: EEPROM ■Similar pinout to 2716 EPROM DESCRIPTION The ER5816 is a high speed electrically word or , EEPROM may be programmed under user control from a simple input device as is the case in radio and , family standards. It is functionally and pin for pin compatible with the Intel 2816 EEPROM and also pin compatible with the 2716 EPROM. The ER5816, however, does not have special ramping requirements for the VPP , after 105 cycles. BLOCK DIAGRAM X DECODER K J V 2k x 8 EEPROM MATRIX A3 . A0- CE Vpp OE _LLL


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PDF ER5816 ER5816IR ER5816HR 300ns ER5816 A0-A10 11-Bit intel 2816 eeprom 2816 EEPROM B 2716 D EEPROM intel 2716 eprom intel 2816 eeprom 2816 eprom 2716 INTEL D 2816 eeprom 2716 intel 2716 eprom
2732 cmos eprom

Abstract: Ic 6116 pin configuration details ic 2716 eprom intel eprom Intelligent algorithm ram 6116 labprog 2716 EPROM 24 PINS intel 2732 eprom 32 pin plcc socket to dil ttl IC TESTER
Text: programmer of EPROM, EEPROM , Flash EPROM, NVRAM and serial EEPROM DIL32 ZIF socket, memories in DIL package , supports memory types up to 32 pins - EPROM, EEPROM , NVRAM, Flash EPROM and serial EEPROM - including low , , with 8 bit data width, full support of LV series (*1*2) EEPROM : NMOS/CMOS, 28xxx, 28Cxxx, 27EExxx , obsolete 2716 /2732 chips) power consumption max. 6W active (8W for obsolete 2716 /2732 chips), about 0.5W


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PDF DIL32 95/98/Me/NT/2000/XP 2V/500mA, 2732 cmos eprom Ic 6116 pin configuration details ic 2716 eprom intel eprom Intelligent algorithm ram 6116 labprog 2716 EPROM 24 PINS intel 2732 eprom 32 pin plcc socket to dil ttl IC TESTER
2816 eeprom

Abstract: intel 2816 eeprom CI EEPROM 2816 eeprom 2816 intel 2816 2kx8 2716 te2025 INTEL D 2816 eprom 2716 B 2716 D EEPROM intel
Text: byte-wide pinout standards ■Functionally equivalent to Intel 2816 EEPROM ■Similar pinout to 2716 , compatible with the ER5816 and the Intel 2816 EEPROM . Some differences of pin functions and control logic , - Y DECODER —A CE WE OE LU 2Kx8 EEPROM MATRIX CONTROL LOGIC AND VOLTAGE GENERATOR , )16IR ■ER5916HR PIN CONFIGURATION DEVICE 2716 ER5816 ER5916 PIN CE Of I/O CE 551 Vpp I/O , A2 C A1 C 6 7 2716 19 18 3 A10 : CË A2 C AI d 6 7 ER5816 19 18 3 A10 3 CE A2 C A1 C 6 ER5916 7 19 18


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PDF ER5916 ER5916IR ER5916HR 300ns ER5916 ERS91I6HR A0-A10 2816 eeprom intel 2816 eeprom CI EEPROM 2816 eeprom 2816 intel 2816 2kx8 2716 te2025 INTEL D 2816 eprom 2716 B 2716 D EEPROM intel
2816 eeprom

Abstract: eeprom 2816 intel 2816 eeprom 2716 eprom 2k eeprom 2816 eprom 2716 2716 EPROM 24 PINS ER5816 ER5816HR ER5816IR
Text: EEPROM ■Similar pinout to 2716 EPROM DESCRIPTION The ER5816 is a high speed electrically word or , EEPROM may be programmed under user control from a simple input device as is the case in radio and , family standards. It is functionally and pin for pin compatible with the Intel 2816 EEPROM and also pin compatible with the 2716 EPROM. The ER5816, however, does not have special ramping requirements for the VPP , after 105 cycles. BLOCK DIAGRAM X DECODER K J V 2k x 8 EEPROM MATRIX A3 . A0- CE Vpp OE _LLL


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PDF ER5816 ER5816IR ER5816HR 300ns ER5816 A0-A10 ER58I6IR 2816 eeprom eeprom 2816 intel 2816 eeprom 2716 eprom 2k eeprom 2816 eprom 2716 2716 EPROM 24 PINS ER5816HR ER5816IR
free circuit eprom emulator

Abstract: 2716 ROM 27LV040 free circuit eeprom emulator 27C040 27C16 rom 2716 2716 eeprom 2716 art
Text: capable of emulating EProm, EEPRom and Flash devices. The MICE-4 is highly reconfigurable. It can be configured to emulate devices from 16 kbit ( 2716 ) until 4 Mbit (27040). The MICE-4 can be inserted in , Supported Devices 2716 ­ 27040 27C16 ­ 27C040 27LV128 ­ 27LV040 28xxx and 29xxx devices can also be


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PDF 32-bit 27C16 27C040 27LV128 27LV040 28xxx 29xxx free circuit eprom emulator 2716 ROM 27LV040 free circuit eeprom emulator 27C040 27C16 rom 2716 2716 eeprom 2716 art
2316 rom

Abstract: eprom 2716 2816 eeprom rom 2716 2816 rom memory EPROM 2708 2716 eeprom 2708 eprom eeprom 2716 2316 EPROM
Text: ) Customer-programmed 2K x 8 EPROM/ EEPROM 24 pin devices, supplied in duplicate, (eg 2516, 2716 , 48016, 2816) (b) 2316 , three-state outputs. In system development a standard EPROM (eg 2716 ) may be used and subsequently replaced by , 2316/ 2716 Fast Access Time (350ns) Fully Static - no Clock or Strobe Low Operating Power (1 OOmW) Low


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PDF MV23SC16 MV23SC16 16384-bit MV23SC16-012 2316 rom eprom 2716 2816 eeprom rom 2716 2816 rom memory EPROM 2708 2716 eeprom 2708 eprom eeprom 2716 2316 EPROM
2316 rom

Abstract: 2516 2k eprom 2316 8 bit rom 2316 EPROM memory rom 2316 TA-350 ground eeprom 2716 27C58 2716 eeprom ROM 2316
Text: / EEPROM 24 pin devices, supplied in duplicate, (eg 2516, 2716 , 48016, 2816) (b) 2316 ROM device (c) As , EPROM (eg 2716 ) may be used and subsequently replaced by the MV23SC16to minimise power supply requirements and production costs. FEATURES Pin-Compatible with 2316/ 2716 Fast Access Time (350ns) Fully


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PDF MV23SC16 MV23SC16 16384-bit 16364-bit 27C58) MV23SC16-012 2316 rom 2516 2k eprom 2316 8 bit rom 2316 EPROM memory rom 2316 TA-350 ground eeprom 2716 27C58 2716 eeprom ROM 2316
2816 eeprom

Abstract: eeprom 2816 2716 eprom RAM 2816 sram 2k x 8 2816 eprom 2716 2k eprom retention 2716 eeprom DS1220Y dallas eeprom 2716
Text: bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM , DS1220Y DALLAS SEMICONDUCTOR FEATURES · 10 years minimum data retention in the absence of externa! power · Data is automatically protected during power loss · Directly replaces 2K x 8 volatile static RAM or EEPROM · Unlimited write cycles · Low-power CMOS · JEDEC standard 24-pin DIP package · Read and write access times as fast as 100 ns · Full 2:10% operating range · Optional industrial


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PDF DS1220Y 24-pin DS1220Y 2816 eeprom eeprom 2816 2716 eprom RAM 2816 sram 2k x 8 2816 eprom 2716 2k eprom retention 2716 eeprom DS1220Y dallas eeprom 2716
intel 2716 eprom

Abstract: Eprom D 2716 D pin for pin compatible with ic 2716 intel 2716 pin diagram of ic 2716 General Instrument HN48016 Eprom B 2716 D ER5716
Text: for pin compatible with Hitachi HN48016 ■Interchangeable with Intel 2716 EPROM DESCRIPTION The , HN48016 and is also interchangeable with the 2716 family of ultraviolet erasable EPROMs. Being , danger of accidental erasure of data by ultraviolet irradiation. ER5716 VERSUS 2716 All pins of the two , (GND) c 12 13 3 D3 and Output Enable for the 2716 have been combined in the Chip Select (CS) function , x 8 EEPROM MATRIX H Y GATING CS Vp PGM ill CONTROL LOGIC D SENSE AMPLIFIERS AND OUTPUT


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PDF ER5716 300ns 300mW HN48016 intel 2716 eprom Eprom D 2716 D pin for pin compatible with ic 2716 intel 2716 pin diagram of ic 2716 General Instrument HN48016 Eprom B 2716 D
2816 eeprom

Abstract: IC 2816 eeprom 2816 2716 2k eprom 24 pin 2816 eprom 2716 eprom eeprom 2716 eprom 2816 2816 ic
Text: bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM , DS 1220AB/AD DALLAS s e m ic o n d u c to r DS1220AB/AD ^ Nonvolatile SRAM FEATURES · 10 years minimum data retention in the absence of external power · Data is automatically protected during power loss · Directly replaces 2K x 8 volatile static RAM or EEPROM · Unlimited write cycles · Low-power CMOS · JEDEC standard 24-pin DIP package · Read and write access times as fast as 100 ns · Lithium


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PDF 1220AB/AD DS1220AB/AD 24-pin DS1220AD) DS1220AB) 2816 eeprom IC 2816 eeprom 2816 2716 2k eprom 24 pin 2816 eprom 2716 eprom eeprom 2716 eprom 2816 2816 ic
pin diagram of ic 2716

Abstract: intel 2716 eprom
Text: . Pin fo r pin com patible w ith H itachi HN48016 Interchangeable w ith Intel 2716 EPROM PIN C O N , pin fo r pin com patible w ith the H itachi HN48016 and is also interchangeable w ith the 2716 fa m , ultraviolet irradiation. 15 : 3 D4 3 D3 and O u tp u t Enable fo r the 2716 have been com bined in , erasures are not possible. ER5716 VERSUS 2716 All pins o f the tw o devices are fu n ctio n a lly , L LOGIC A DECODER A0- V 2K x 8 EEPROM MATRIX D7 A 1 0 _fc. i i Y DECODER A 7


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PDF ER5716 ER5716IR ER5716HR 300ns 300mW HN48016 ER5716IR/HR A0-A10 ER5716 ER5716IR pin diagram of ic 2716 intel 2716 eprom
2316 rom

Abstract: 2316 8 bit rom 2716 2k eprom 27C58 ic rom 2816 2816 rom pin diagram of ic 2716 2k rom 24pin Motorola
Text: following: (a) Customer-programmed 2K x 8 EPROM/ EEPROM 24 pin devices, supplied in duplicate, (eg 2516, 2716 , using the three-state outputs. In system developm ent a standard EPROM (eg 2716 ) m ay be used and , Pin-Compatible with 2316/ 2716 Fast Access Time (350ns) Fully Static - no Clock or Strobe Low Operating Power (1


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PDF MV23SC16 MV23SC16 16384-bit 27C58) MV23SC16-012 2316 rom 2316 8 bit rom 2716 2k eprom 27C58 ic rom 2816 2816 rom pin diagram of ic 2716 2k rom 24pin Motorola
intel 2716 eprom

Abstract: HN48016 eprom 2716 ER5716 ER5716HR ER5716IR B 2716 D EEPROM intel "General Instrument"
Text: Dissipation: 300mW max. ■Pin for pin compatible with Hitachi HN48016 ■Interchangeable with Intel 2716 , compatible with the Hitachi HN48016 and is also interchangeable with the 2716 family of ultraviolet erasable , eliminated is the danger of accidental erasure of data by ultraviolet irradiation. ERS716 VERSUS 2716 All , D2 c 11 14 3 D4 Vss(GND) c 12 13 3 D3 and Output Enable for the 2716 have been combined in the , - Y DECODER A V 2K X 8 EEPROM MATRIX U Y GATING CS VP PGM ill CONTROL LOGIC i b SENSE


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PDF ER5716 ER5716IR ER5716HR 300ns 300mW HN48016 ER5716 ER5716IR/HR intel 2716 eprom HN48016 eprom 2716 ER5716HR ER5716IR B 2716 D EEPROM intel "General Instrument"
intel 2708 eprom

Abstract: B 2716 D EEPROM intel 568AF Intel 1702 eprom memory EPROM 2708 ic 2716 eprom
Text: control functions, the EE-PROM has evolved from th é 2716 E-PROM. Both are housed in 24-pin d u al in-line , EE-PROM . will one day be the standard whoseprogram s can be altered rem otely, tit by phone, form o , . announced a 2-k-by-8-bil M replacementfor the 2716 E-PROM. Compatibility with maty a memory maker. Likewise, the widespread aydleM ityoflarge EE-PRO M s is still years off. the 2716 is the impetus behindthe ^ re , erasable memory will usher in systems from afloating gate. 16-K EE-PROM relies on tunneling for


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PDF AR-119 AFN-01913A 10-ms intel 2708 eprom B 2716 D EEPROM intel 568AF Intel 1702 eprom memory EPROM 2708 ic 2716 eprom
CI EEPROM 2816

Abstract: 2816 eeprom eeprom 2816 dallas date code DS1220AD DS1220AB DS1220AD 2716 EPROM DS1220Y dallas d6122
Text: 24-pin DIP standard. The DS1220AB/AD also matches the pinout of the 2716 EPROM or the 2816 EEPROM , EEPROM • Unlimited write cycles • Low-power CMOS • Over 10 years of data retention • Standard , replaces 2K x 8 volatile static RAM or EEPROM • UnKmited write cycles • Low-power CMOS • Over 10 , popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM , allowing direct substitution while enhancing performance. There is no limit on the number of


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PDF DS1220AB/AD Ebl413D 000Mb34 24-pin 100ns, 120ns, 150ns, 200ns DS1220Y CI EEPROM 2816 2816 eeprom eeprom 2816 dallas date code DS1220AD DS1220AB DS1220AD 2716 EPROM DS1220Y dallas d6122
1999 - HIP7038A8F

Abstract: la 7935 7935 eeprom programmer diode 7935 68HC05 intersil frequency counter HIP7030A8 HIP7038A8 J1850
Text: HIP7038A8 PRELIMINARY J1850 8-Bit 68HC05 Microcontroller 8K EEPROM Version April 1994 , Software Features The HIP7038A8 HCMOS Microcomputer is an EEPROM version of the HIP7030A family of , 7744 Bytes of Programmable EEPROM - 242 Bytes of Bootstrap Program · Single 5V Supply · 10MHz , Terminal Assignment as HIP7030A2 and HIP7030A8 The device can be programmed using the HIP7038A8 EEPROM , 4 VPW SYMBOL ENCODER / DECODER AND ARBITRATION 242 x 8 BUILT-IN-TEST EEPROM 9-100 26


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PDF HIP7038A8 J1850 68HC05 HIP7030A2/A8 HIP7038A8 HIP7030A J1850 J1850. HIP7030A2/A8 HIP7038A8F la 7935 7935 eeprom programmer diode 7935 intersil frequency counter HIP7030A8
1999 - 2816 eeprom

Abstract: CI EEPROM 2816 eeprom 2816 CI EPROM 2816 EEPROM 2816 DATASHEET 2816 eprom DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150
Text: bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM , DS1220Y 16k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 24-pin DIP package Read and write access times as fast as 100 ns Full ±10% operating range


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PDF DS1220Y 24-pin 720-mil 100pF DS1220Y 24-PIN 2816 eeprom CI EEPROM 2816 eeprom 2816 CI EPROM 2816 EEPROM 2816 DATASHEET 2816 eprom DS1220Y-100 DS1220Y-120 DS1220Y-150
1998 - atmel 438

Abstract: Atmel 546 atmel 446 ATMEL 1230 atmel 735 atmel 532 ATMEL 745 ATMEL 920 ATMEL 1237 atmel 1044
Text: . Atmel's EEPROM die products are processed with an advanced CMOS floating gate technology. As with all , 's manufacturing equipment. Parallel EEPROM Die Products Die Products Testing Reference Parallel EEPROM , Parallel EEPROM Die Product Test Flow FAB UNTESTED WAFERS DIE SORT 1 100% AC/DC DATASHEET PARAMETERS , : Instructions for Parallel EEPROM Die Product is available from Atmel. 2 Die Products 1. Represents , 4274 CE 2716 -4444 A16 2 4274 *Coordinates are calculated from die center point


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PDF 0554C 06/98/xM atmel 438 Atmel 546 atmel 446 ATMEL 1230 atmel 735 atmel 532 ATMEL 745 ATMEL 920 ATMEL 1237 atmel 1044
2816 eeprom

Abstract: CI EEPROM 2816 DS1220AB-100 DS1220AD EEPROM 2816 CMOS ICC01 DS1220AD-120 DS1220AD-100 DS1220AB-150 DS1220AB-120
Text: match the pinout of the 2716 EPROM and the 2816 EEPROM , allowing direct substitution while enhancing , DS1220AB/AD 16k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 24-pin DIP package Read and write access times as fast as 100 ns Lithium energy source is electrically


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PDF DS1220AB/AD 24-pin DS1220AD) DS1220AB) 100ns 120ns 2816 eeprom CI EEPROM 2816 DS1220AB-100 DS1220AD EEPROM 2816 CMOS ICC01 DS1220AD-120 DS1220AD-100 DS1220AB-150 DS1220AB-120
Not Available

Abstract: No abstract text available
Text: matches the pinout of the 2716 EPROM or the 2816 EEPROM , allowing direct substitution while enhancing , DS1220Y s e m ic o n d u c to r DALLAS DS1220Y 16K Nonvolatile SRAM FEATURES · Data retention in the absence of V cc PIN ASSIGNMENT A7 1 | | s 1 4 Ul 2 24 1 VCC A8 A9 WE ÔË A10 CË DQ7 DQ6 DQ5 DQ4 DQ3 · Data is automatically protected during power loss A6 23 1 22 21 1 1 · Directly replaces 2K x 8 volatile static RAM or EEPROM · Unlimited write cycles A5 A4 A3 · Low-power


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PDF DS1220Y 24-pin 100ns, 120ns, 150ns, 200ns Vcc11. DS1220Y 24-PIN
2001 - 2816 eeprom

Abstract: CI EEPROM 2816 DS1220Y-120 DS1220Y DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom
Text: matches the pinout of the 2716 EPROM or the 2816 EEPROM , allowing direct substitution while enhancing , Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 24-pin DIP package Read and write


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PDF DS1220Y 24-pin 24-ONS 100pF DS1220Y 720-MIL 24-PIN 2816 eeprom CI EEPROM 2816 DS1220Y-120 DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom
CI EEPROM 2816

Abstract: EEPROM 2816 CMOS eeprom 2816 DS1220Y-200 DS1220Y-120 DS1220Y-100 DS1220Y-150 DS1220Y-200IND DS1220Y-100IND 2816 eeprom
Text: bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM , NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 24-pin DIP package Read and write access times as fast as 100 ns Full ±10%


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PDF DS1220Y 24-pin 720-mil DS1220Y-150 DS1220Y-150+ DS1220Y-200 DS1220Y-200+ DS1220Y-200IND DS1220Y-200IND+ CI EEPROM 2816 EEPROM 2816 CMOS eeprom 2816 DS1220Y-200 DS1220Y-120 DS1220Y-100 DS1220Y-150 DS1220Y-200IND DS1220Y-100IND 2816 eeprom
dell latitude d600 laptop circuit diagram

Abstract: dell latitude d610 battery CIRCUIT diagram dell laptop circuit diagram DELL laptop power supply diagram SCP1000-D11 dell laptop d610 circuit diagram DELL pa- 21 power supply diagram SCP1000 transistor equivalents for d410 TN48
Text: SCP1000 EEPROM (1 Activate High resolution measurement mode Meas results display; pressure results are corrected by values read from EEPROM (1,2 NO User changes display from pull down , (the offset difference in EEPROM is zero), the MCU corrects the SCP1000 output value with zero value , SCP1000 internal EEPROM . SCP1000 is also initialised during the start up screen. The MCU software , SCP1000 internal EEPROM registers' USERDATA1 (0x29) and USERDATA (0x2A). The offset adjustment is


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PDF SCP1000 dell latitude d600 laptop circuit diagram dell latitude d610 battery CIRCUIT diagram dell laptop circuit diagram DELL laptop power supply diagram SCP1000-D11 dell laptop d610 circuit diagram DELL pa- 21 power supply diagram transistor equivalents for d410 TN48
2816 eeprom

Abstract: RAM 2816 DS1220AB DS1220AD VA10 2716 eprom
Text: -pln DIP standard. The DS1220AB also matches the pinout of the 2716 EPROM or the 2816 EEPROM , allowing , DALLAS SEMICONDUCTOR CORP 3HE D 21,14130 D00337Q M ■DAL DS1220AB/AD DALLAS SEMICONDUCTOR DS1220AB/AD 16K Nonvolatile SRAM FEATURES • Data retention In the absence of Vc0 • Data Is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or EEPROM • Unlimited write cycles • Low-power CMOS • Over 10 years of data retention • Standard 28-pln JEDEC


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PDF D00337Q DS1220AB/AD 28-pln 100ns, 120ns, 150ns, 200ns DS1220 DS1210 2816 eeprom RAM 2816 DS1220AB DS1220AD VA10 2716 eprom
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