1997 - 3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous , Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS Application Frame Memory Specific Memory SGRAM Video RAM DRAM Modules Memory Shortform, EDO DRAM Modules EDO DRAM Modules x 32 EDO DRAM Modules Organisation Partname Vcc Access Time (ns) Package Remark , 72 8M x 32 HB56U832 5V 2k cycles Memory Shortform, EDO DRAM Modules Organisation x 64 EDO
|
Original
|
PDF
|
HB56U132
HB56H132
HB56U232
HB56H232
HN62W454B
512kx8
256kx16
HN62W4416N
16Mbit
1Mx16
3524CP
2MX40
RAM128KX8 DIP
HM624256
HM62832
16Mbit FRAM
Dram 168 pin EDO 8Mx8
hm62256
flash 32 Pin PLCC 16mbit
HN27C1024
|
DRAMs
Abstract: Dram 168 pin EDO buffered PQFP-128 Multibank - DRAM Signal Path Designer Bus repeater 64MEDO
Text: and performance. Fast Page Mode and EDO Fast page mode was the standard in DRAM functionality's over more than ten years. EDO is a new DRAM operation modes that improve the performance of the memory , standard DRAM . In technical terms, the essential advantage of EDO is a shorter page mode cycle, therefore , DRAMs. Since EDO memory operate very similarly to conventional FPM DRAMs, both DRAM types use the same , and a much smaller card size compared to standard SIMM modules. The new 168 pin DIMM module families
|
OCR Scan
|
PDF
|
64M-EDO
4/x72
DRAMs
Dram 168 pin EDO buffered
PQFP-128
Multibank - DRAM
Signal Path Designer
Bus repeater
64MEDO
|
1997 - SO DIMM 72-pin
Abstract: "simm 72 pin" uPD27C8000 2620 dynamic ram simm 72 pin DIMM 72-pin SIMM 72 MC-422000F32 8k refresh simm 72 edo dram 72-pin SO DIMM
Text: s 144- pin Synchronous DRAM SO DIMM ( DIMM :Dual In-line Memory Module), Unbuffered type Clock Bank , -422000AA64 Supply voltage (V) Package EDO Fast page Remarks 5.0±0.25 · 168- pin DIMM Socket type (Gold , -422000LAB72 EDO Fast page MC-422000LFB72 EDO 168- pin DIMM Unbuffered type 168- pin DIMM Buffered type 144- pin SO DIMM 72- pin SIMM 72- pin SO DIMM INDEX MENU QUIT s 168- pin 8 Byte DIMM , DIMM Unbuffered type 168- pin DIMM Buffered type 144- pin SO DIMM 72- pin SIMM 72- pin SO DIMM
|
Original
|
PDF
|
8K/64*
4K/64
50-pin
32-pin
PD4264405
PD4265405
SO DIMM 72-pin
"simm 72 pin"
uPD27C8000
2620 dynamic ram
simm 72 pin
DIMM 72-pin
SIMM 72
MC-422000F32
8k refresh simm 72
edo dram 72-pin SO DIMM
|
simm 72 edo 256
Abstract: No abstract text available
Text: ories fast page, EDO , Burst-EDO and SDRAM - can be used on the 168 pin DIMM m odules and these m odule , utput ( EDO ) DRAMs. Synchrononous DRAMs (SDRAMs) and M ultibank DRAMs (MDRAMs) are innovative DRAM , the standard in DRAM functionality's over m ore than ten years. EDO is a new DRAM operation m odes , , both DRAM types use the same external signals and packages. In m ost cases EDO will w ork in system s , much sm aller card size com pared to standard SIMM modules. The new 168 pin DIMM m odule fam ilies are
|
OCR Scan
|
PDF
|
64MEDO
i32/x36
simm 72 edo 256
|
Not Available
Abstract: No abstract text available
Text: , 168 DRAM DIMM SYMBOL 30, 45 NW E PIN NUMBERS Vcc Data I/O: For WRITE cycles , Technology. Inc DRAM DIMM SYMBOL NW I E PIN NUMBERS ADVANCE |U |IC R O N 2 MEG MT9LD , EDO and FAST PAGE MODEs. DRAM DIMM 5-144 hlllSM*) DOl EbñT Micron Technology, Ir , (LATE WRITE and READ-MODIFY-WRITE cycles) NW E v¡r DRAM DIMM \ a EDO /FAST-PAGE-MODE , (Addresses, OE = DONâT CARE) RAS NW E DRAM DIMM EDO READ CYCLE (with WE-controlled disable
|
OCR Scan
|
PDF
|
168-Pin
DE-17)
DE-18)
|
1999 - FPM DRAM
Abstract: MT5LDT472 SO DIMM 100 Pin Pinout edo
Text: . ©1999, Micron Technology, Inc. PRELIMINARY 4 MEG x 72 BUFFERED DRAM DIMM PIN DESCRIPTIONS PIN , Technology, Inc. PRELIMINARY 4 MEG x 72 BUFFERED DRAM DIMM EDO PAGE MODE AC ELECTRICAL , tDS tRAD tRAD (FPM) ( EDO ) 4 Meg x 72 Buffered DRAM DIMM DM90.p65 Rev. 2/99 10 10 58 , ) 4 Meg x 72 Buffered DRAM DIMM DM90.p65 Rev. 2/99 tRWL tWCH tWCR tWP (FPM) ( EDO ) (FPM , (FPM) ( EDO ) 5 5 ns is for LATE WRITE cycles only. 4 Meg x 72 Buffered DRAM DIMM
|
Original
|
PDF
|
MT5LDT472
168-pin,
168-Pin
FPM DRAM
MT5LDT472
SO DIMM 100 Pin Pinout edo
|
1999 - block diagram of FPM
Abstract: DIMM 1999 FPM DRAM DM91 marking code ACh 168PIN DIMM 32MB
Text: , Micron Technology, Inc. PRELIMINARY 4 MEG x 72 NONBUFFERED DRAM DIMM PIN DESCRIPTIONS PIN , notice. ©1999, Micron Technology, Inc. PRELIMINARY 4 MEG x 72 NONBUFFERED DRAM DIMM EDO PAGE , . PRELIMINARY 4 MEG x 72 NONBUFFERED DRAM DIMM EDO PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes: 5, 6 , tCAS MIN (FPM) ( EDO ) 4 Meg x 72 Nonbuffered DRAM DIMM DM91.p65 Rev. 5/99 tWCH tWCR , Meg x 72 Nonbuffered DRAM DIMM DM91.p65 Rev. 5/99 tRWL tWCH tWCR tWP (FPM) ( EDO ) (FPM
|
Original
|
PDF
|
MT5LDT472A
168-pin,
168-Pin
block diagram of FPM
DIMM 1999
FPM DRAM
DM91
marking code ACh
168PIN DIMM 32MB
|
1999 - MT5LDT472
Abstract: fpm 75 64mb edo ecc
Text: Buffered DRAM DIMM DM90.p65 Rev. 2/99 1 PIN SYMBOL 127 VSS 128 RFU 129 NC (RAS3#) 130 NC , without notice. ©1999, Micron Technology, Inc. PRELIMINARY 4 MEG x 72 BUFFERED DRAM DIMM PIN , Technology, Inc. PRELIMINARY 4 MEG x 72 BUFFERED DRAM DIMM EDO PAGE MODE AC ELECTRICAL , ) tCWD tCWD ( EDO ) tDH tDS tOD (FPM) 4 Meg x 72 Buffered DRAM DIMM DM90.p65 Rev. 2/99 , without notice. ©1999, Micron Technology, Inc. PRELIMINARY 4 MEG x 72 BUFFERED DRAM DIMM EDO
|
Original
|
PDF
|
MT5LDT472
168-pin,
168-Pin
MT5LDT472
fpm 75
64mb edo ecc
|
Not Available
Abstract: No abstract text available
Text: Technology, Inc. til 1 1 5 â¡Dl^fiHD b l 6 â DRAM DIMM OPTIONS 168- Pin DIMM (DE-11) 2 Meg x , DRAM DIMMs DM60.pir.5-Rev. 3/97 b l l l S 4 R Check Bits. DRAM DIMM PIN NUMBERS 30, 45 , READ-MODIFY-WRITE cycles) DRAM DIMM Y /A DONâT CARE FAST PAGE MODE AND EDO PAGE MODE TIMING PARAMETERS , ) MT18LD472A(X) MT36LD872A(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) ⢠JEDEC, eight CAS#, ECC pinout in a 168- pin , dual in line m emory module ( DIMM ) ⢠16MB (2 M eg x 72), 32MB (4 M eg x
|
OCR Scan
|
PDF
|
MT9LD272A
MT18LD472A
MT36LD872A
168-pin,
048-cycle
|
2000 - VCC166
Abstract: 128m simm 72 pin ddr 200pin SO DIMM L-71001-0D 72 pin 128mb L7105 L-71051-0C 72 simm edo dram 64mb
Text: Capacity 64MB 128MB 256MB 512MB 1GB High Speed EDO SDRAM DDR SDRAM RDRAMTM Small outline Memory Module 72pin S.O.DIMM 144pin S.O.DIMM 200pin DDR S.O . DIMM Memory Module 144pin Micro DIMM 72pin x36 168pin x72 184pin x72 210pin x144 Unbuffered DIMM Buffered (Registered) DIMM , , SDRAM 184PIN DIMM DDR SDRAM 168PIN Buffered 3.3V, EDO Work Station 168PIN Un-buffered 3.3V, EDO , Organization Code (module type and pin number) E : 100pin SODIMM F : 144pin SODIMM G : 144pin Micro DIMM H
|
Original
|
PDF
|
L-71001-0D
128MB
256MB
512MB
72pin
144pin
200pin
168pin
VCC166
128m simm 72 pin
ddr 200pin SO DIMM
L-71001-0D
72 pin 128mb
L7105
L-71051-0C
72 simm edo dram 64mb
|
1998 - upd23c8000
Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
Text: DIMM - Unbuffered type EDO ,Fast Page Mode DRAM Module 168- pin 8 byte DIMM - Buffered type 144- pin 8 , 168- pin DIMM Socket type (Gold plated) EDO Package Remarks MENU · 144- pin 8 Byte SO DIMM ( SO DIMM , Supply voltage (V) 3.3±0.3 · 144- pin SO DIMM Socket type (Gold plated) EDO Self refresh Package Remarks , ) Part number Bank Org. 1 MC-4516DA726 MENU · 144- pin Synchronous DRAM SO DIMM ( SO DIMM : Small , Fast Page Mode DRAM 64M fast page mode DRAM MENU Synchronous DRAM Module 168- pin SDRAM DIMM -
|
Original
|
PDF
|
-PC100
compliant64M
compliant16M
168-pin
16-bit,
upd23c8000
upd4502161
uPD23C8000X
uPD4504161
*D431016
uPD23C16000
|
Not Available
Abstract: No abstract text available
Text: -4458-01 Released 4/96 P a g e 183 IBM11S4325BP IBM11S4325BM 4M x 32 SO DIMM Module Pin Description RASO , 5B M 4M x 32 SO DIMM Module Block Diagram 50H4745 SA14-4458-01 Released 4/96 P age 185 IBM11S4325BP IBM11S4325BM 4M x 32 SO DIMM Module Truth Table Function Standby Read Early-Write EDO Mode , IBM11S4325BP IBM11S4325BM 4M x 32 SO D IM M M odule Features · 72- Pin Small Outline Dual-ln-Line , 300mil package. The use of EDO DRAM s allows for a reduction in Page Mode cycle time from 40ns (Fast Page
|
OCR Scan
|
PDF
|
IBM11S4325BP
IBM11S4325BM
72-Pin
104ns
124ns
50H4745
SA14-4458-01
|
edo dram 72-pin simms 64mb
Abstract: 64mb 72-pin simm 2m 72-pin Flash simms Flash dIMM ibm thinkpad board diagram rom 72-pin mobile MOTHERBOARD parts diagram edo dram 72-pin SO DIMM
Text: 72 pin JEDEC standard DRAM SIMM modules to 128MB with 3.3V and 5V, FPM and EDO options · 168 pin AMS Families, DRAM DIMM modules to 128MB with 3.3V and 5V, FPM, EDO and SDRAM options · Full line of 72 pin SO DIMM DRAM modules to 64MB with 3.3V and 5V, FPM and EDO options · 144 pin AMS Families, DRAM SO DIMM , Sector Erase Flash SIMM modules 144- PIN MODULES 144- pin SO DIMM FLASH modules FLASH CARDS ATA Flash , REFERENCE GUIDE: 168- PIN 8-BYTE WIDE FLASH DIMM MODULES DENSITY ORG. ACCESS TIME (ns) PROG. VOLTAGE (V
|
OCR Scan
|
PDF
|
168-PIN
SM564F2000
SM564F1000
SM764A8000S
SM764
4000S
SM764A2000S
2Mx64
SM76423XG2CUUGU
SM76413X61CUIIGU
edo dram 72-pin simms 64mb
64mb 72-pin simm
2m 72-pin Flash simms
Flash dIMM
ibm thinkpad board diagram
rom 72-pin
mobile MOTHERBOARD parts diagram
edo dram 72-pin SO DIMM
|
1996 - IBM11M4730C4M
Abstract: No abstract text available
Text: . Page 1 of 30 IBM11N8645H IBM11N8735H 8M x 64/72 DRAM MODULE Pin Description RAS0, RAS2 Row , IBM11N8645H IBM11N8735H 8M x 64/72 DRAM MODULE x64 DIMM Block Diagram (1 Bank, x4 DRAMs) OE0 WE0 , or Write Cycle is optional. Doing so will facilitate compatibility with future EDO DRAMs. ©IBM , . Doing so will facilitate compatibility with future EDO DRAMs. 54H8530 SA14-4625-02 Released 5/96 , time During a Read or Write Cycle is optional. Doing so will facilitate compatibility with future EDO
|
Original
|
PDF
|
IBM11M4730C4M
E12/10,
IBM11N8645H
IBM11N8735H
8Mx64,
8Mx72
104ns
SA14-4625-02
|
|
1996 - Not Available
Abstract: No abstract text available
Text: DRAM modules. The DIMMs use serial presence detects implemented via a serial EEPROM using the two pin , this document. Page 1 of 30 IBM11N1645B IBM11N1735B 1M x 64/72 DRAM Module Pin Description , Cycle is optional. Doing so will facilitate compatibility with future EDO DRAMs. ©IBM Corporation , time During a Read or Write Cycle is optional. Doing so will facilitate compatibility with future EDO , -4621-00 Released 6/96 IBM11N1645B IBM11N1735B 1M x 64/72 DRAM Module EDO Page Mode Read Cycle tRP
|
Original
|
PDF
|
IBM11N1645B1M
E10/10,
AuMMDL24DSU-001045830.
IBM11N1735B1M
IBM11N1645B
IBM11N1735B
1Mx64,
1Mx72
|
1998 - Not Available
Abstract: No abstract text available
Text: 32M x 72 Chipkill Correct DRAM Module Features · 168- Pin JEDEC Standard, 8-Byte Dual In-line Memory Module · 32M x 72 (Dual Bank) Chipkill Correct EDO DIMM · Performance: tRAC RAS Access Time , are not buffered, which preserves the DRAM access specifications of 50ns. All IBM 168- pin DIMMs , Correct DRAM Module Pin Description Pinout RAS0, RAS1, RAS2, RAS3 Row Address Strobe CAS0 , Correct DRAM Module x 72 ECC DIMM Block Diagram (2 Banks, x4 DRAMs) WE0 WE2 OE0 RAS3 CAS0 OE2
|
Original
|
PDF
|
IBM11M32845CB32M
E12/12,
EDOMMDL18DSU-001041529.
E13/11,
IBM11M32845CB
168-Pin
101ns
SA14-XXXX-xx
|
Not Available
Abstract: No abstract text available
Text: IBM11N16735B/C 16M x 64/72 DRAM MODULE Pin Description R Ã3 o ,K Ã 32 Row Address Strobe Vcc , 00 51 4 f f f â lll IBM11N16645B/C IBM11N16735B/C 16M X 64/72 DRAM MODULE x72 ECC DIMM , optional. Doing so will facilitate compatibility with future EDO DRAMs. 75H 1640 S A 14 -4 6 2 6 -0 0 , â I RDOblMb U0DÃ52Ã 37 2 â IBM11N16645B/C IBM11N16735B/C 16M x 64/72 DRAM MODULE EDO , a Read or Write Cycle is optional. Doing so will facilitate compatibility with future EDO DRAMs
|
OCR Scan
|
PDF
|
16Mx64
16Mx72
104ns
IBM11N16645B/C
IBM11N16735B/C
00bl4b
|
ED98
Abstract: 64MEDO
Text: CRAM (unction alily's over more than ten years. EDO and Burst-EDO are new DRAM operation modes thai , Trends in M&mory Technology DRAM spsedl improvements have historically come from process and photolithography advances, More recent improvements in DRAM performance however, have resulted from changes to the DRAM architecture that require insignificant or no Increase In die size. The mest recent example has been the introduction of Extended Data Output ( EDO ) and Pipelined Nibble Mode (Burat-EDQor BE DO) DRAMe
|
OCR Scan
|
PDF
|
13urst-EDO
64M-EDO
ED98
64MEDO
|
Not Available
Abstract: No abstract text available
Text: IBM11N1735B 1M X 64/72 DRAM Module Pin Description EÄS0.RS52 5Ä 50-C Ä S 7 WÈ0.WE2 ÜË0.ÜË2 A 0 -A 9 DQx , /72 DRAM Module Truth Table Function Standby Read Early-Write Late-Write RMW EDO Page Mode - Read , Read or Write Cycle is optional. Doing so will facilitate compatibility with future EDO DRAMs. 75H , optional. Doing so will facilitate compatibility with future EDO DRAMs. ©IBM Corporation. All rights , Cycle is optional. Doing so will facilitate compatibility with future EDO DRAMs. ©IBM Corporation
|
OCR Scan
|
PDF
|
IBM11N1645B
IBM11N1735B
1Mx72
104ns
124ns
75H3414
SA14-4621-00
IBM11N1735B
SA14-4621
|
1998 - IBM11M32735BBC
Abstract: No abstract text available
Text: . IBM11M32735BBC 32M x 72 Stacked DRAM Module Features · 168- Pin JEDEC-Standard 8-Byte Dual In-Line Memory , speed memory array and is configured as 2 16Mx72 banks. The DIMM uses 36 16Mx4 EDO DRAMs in 18 stacked , - last ship) IBM11M32735BBC 32M x 72 Stacked DRAM Module Pin Description Pinout RAS0 , ship) IBM11M32735BBC 32M x 72 Stacked DRAM Module x72 ECC DIMM Block Diagram: 2 Bank, x4 DRAMs , time During a Read or Write Cycle is optional. Doing so will facilitate compatibility with future EDO
|
Original
|
PDF
|
IBM11M16730CB16M
E13/11,
IBM11M32735BBC
168-Pin
32Mx72
104ns
IBM11M32735BBC
|
1998 - chipkill
Abstract: No abstract text available
Text: Memory Module · 32M x 72 (Dual Bank) Chipkill Correct EDO DIMM · Performance: tRAC tCAC tAA tRC tHPC RAS , provide information for the entire DIMM bank. All IBM 168- pin DIMMs provide a high-performance, flexible 8 , Correct DRAM Module Pin Description RAS0, RAS1, RAS2, RAS3 CAS0, CAS1, CAS4, CAS5 WE0, WE2 OE0, OE2 A0 , 2 of 29 IBM11M32845CB 32M x 72 Chipkill Correct DRAM Module x 72 ECC DIMM Block Diagram (2 , /Density) PD2 PD3 PD4 PD5 ( EDO Detection) PD6 (PD6 - PD7: Speed) PD7 PD8 (Parity/ECC Designator) ID0 ( DIMM
|
Original
|
PDF
|
IBM11M32845CB32M
E12/12,
EDOMMDL18DSU-001041529.
E13/11,
IBM11M32845CB
168-Pin
101ns
SA14-XXXX-xx
chipkill
|
Not Available
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 8 4 5 C B 16M x 72 Chipkill Correct DRAM Module Features · 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module · 16Mx72 Chipkill Correct EDO DIMM · Performance: ! i^RAC i , is an industry standard 168- pin 8-byte Dual In-line Memory Module ( DIMM ) which is organized as a 16Mx72 high speed memory array, designed with EDO DRAMs for ECC applications. The DIMM uses additional , DIMM bank. All IBM 168- pin DIMMs provide a high performance, flexible 8-byte interface in a 5.25" long
|
OCR Scan
|
PDF
|
16Mx72
104ns
|
1997 - chipkill
Abstract: Ras 1210 IBM ASIC Products
Text: . IBM11M8845HB 8M x 72 Chipkill Correct DRAM Module Features · 168 Pin JEDEC Standard, 8 Byte Dual In-line , Correct EDO DIMM -Buffered inputs (except RAS, Data) -Reduced noise (32 VSS/VCC pins) -Buffered PDs , Description IBM11M8845HB is an industry standard 168- pin 8-byte Dual In-line Memory Module ( DIMM ) which is organized as an 8Mx72 high speed memory array, designed with EDO DRAMs for ECC applications. The DIMM uses , DIMM bank. All IBM 168- pin DIMMs provide a high performance, flexible 8-byte interface in a 5.25
|
Original
|
PDF
|
IBM11M8730HB8M
E12/11,
IBM11M8845HB
8Mx72
104ns
chipkill
Ras 1210
IBM ASIC Products
|
Not Available
Abstract: No abstract text available
Text: IB M 1 1 N 2 6 4 5 H IB M 1 1 N 2 7 3 5 H 2M x 64/72 DRAM MODULE Features · 168 Pin JEDEC , DIMM manufacturer and the second 128 bytes of serial PD data are available to the customer. All IBM 168- pin , 2M x 64/72 DRAM MODULE Pin Description RASO, RÄS2 CASO - CAS7 W ËO , W Ë 2 Row Address Strobe , /97 Page 2 of 31 IBM11N2645H IBM11N2735H 2M x 64/72 DRAM MODULE x64 DIMM Block Diagram (1 , time During a Read or Write Cycle is optional. Doing so will facilitate compatibility with future EDO
|
OCR Scan
|
PDF
|
2Mx64,
2Mx72
SA14-4634-06
|
Not Available
Abstract: No abstract text available
Text: IBM11M32735BBC 32M x 72 Stacked DRAM Module Features ⢠168- Pin JEDEC-Standard 8-Byte Dual , ) Extended Data Out Mode DIMM ⢠Performance: -50 I ⢠Extended Data Out ( EDO ) Mode, Read-ModifyW , standard 168- pin 8-byte Dual In-line Memory Module ( DIMM ) for ECC applications which is organized as a 32Mx72 high speed memory array and is configured as 2 16Mx72 banks. The DIMM uses 36 16Mx4 EDO DRAMs in , 11M32735BBC 32M x 72 Stacked DRAM Module Pin Description Pinout RÃSO, RÃS1, RÃS2, RÃS3 I Row
|
OCR Scan
|
PDF
|
IBM11M32735BBC
168-Pin
32Mx72
104ns
|