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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CUZ30V CUZ30V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
CUZ20V CUZ20V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
CEZ6V2 CEZ6V2 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
CUZ6V8 CUZ6V8 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Visit Toshiba Electronic Devices & Storage Corporation
CUZ12V CUZ12V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
MUZ5V6 MUZ5V6 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

dumper diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SC5858

Abstract: transistor c5858 c5858 2sc5570 C5446 S2055n 2sc 5587 2SC5588 2SC5587 2SC5859
Text: Display size & Frequency Device Outline Sample MP with high speed dumper diode (31.5kHz) New , 200 200 200 220 220 50 55 75 200 70 75 200 210 75 210 hFE Dumper Diode x x , size TR selection guide( for TV) VCBO=1500V with dumper diode VCBO=1700V without dumper diode with dumper diode without dumper diode VCBO=2000V without dumper diode Flat TV / Wide , =1500V Package TO-3P(H)IS TO-3P(LH) PC max 40-75W with without Dumper Dumper 2SD2599 2SD2586


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PDF DP0540034 2SC5716 2SC6041 2SC5857 2SC5858 2SC5859 2SC5997 2SC5748 2SC5588 2SC5588( 2SC5858 transistor c5858 c5858 2sc5570 C5446 S2055n 2sc 5587 2SC5588 2SC5587 2SC5859
1998 - IC-3479

Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Text: TIME vs. COLLECTOR CURRENT DUMPER DIODE CHARACTERISTICS 10 100 tstg 1 tf ton 0.1 0.1 10 1 100 m 10 m 1 IC - Collector Current - A 4 IF(E-C) - Dumper Diode Forward , (E-C) - Dumper Diode Voltage - V 4.0 µPA1428A REFERENCE Document Name Document No. NEC


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PDF PA1428A PA1428A PA1428AH IC-3479 IC-8359 uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
2002 - Not Available

Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. PACKAGE DRAWING (UNIT: mm) FEATURES · On-chip bias resistor: R1 = 2.2 , On-chip dumper diode for reverse cable ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Symbol Ratings


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2002 - CE1F3P

Abstract: D1617
Text: '$7$ 6+(7 &203281' 75$16,6725 &()3 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU )RU PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for , On-chip dumper diode for reverse cable ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Symbol , (UNIT: mm) FEATURES · On-chip zener diode for surge voltage absorption · On-chip bias resistor: R1


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PDF cycle50 CE1F3P D1617
2SB1093

Abstract: 2SD1579 dumper diode
Text: NPN SILICON DARLINGTON TRANSISTOR 2SD1579 DESCRIPTION The 2SD1579 is a darlington transistor including a dumper diode at E-C. It is suitable for general driving use, such as hammer, solenoid, lamp or motor. FEATURES • High DC current gain. • High current capability, wide ASO and low collector saturation voltage. • Includes a dumper diode at E-C. • A complementary pair with NEC's 2SB1093. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature. —55 to +150 °C


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PDF 2SD1579 2SD1579 2SB1093. 2SB1093 dumper diode
Tf 227

Abstract: 2SB1093 2SD1579 dumper diode
Text: PNP SILICON DARLINGTON TRANSISTOR 2SB1093 DESCRIPTION The 2SB1093 is a darlington transistor including a dumper diode at C-E. It is suitable for general driving use, such as hammer, solenoid, lamp or motor. FEATURES • High DC currentjjain. • High current capability, wide ASO and low collector saturation voltage. • Includes a dumper diode at C-E. • A complementary pair with NEC's 2SD1579. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature. —55 to +150 °C


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PDF 2SB1093 2SB1093 2SD1579. VCC--50 Tf 227 2SD1579 dumper diode
2002 - 2SD1843

Abstract: diode dumper
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as motors , resistance due to on-chip protection elements: C to E: Dumper diode C to B: Zener diode · Low collector


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PDF 2SD1843 2SD1843 diode dumper
2002 - TRANSISTOR K 314

Abstract: NEC semiconductor
Text: DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING (UNIT: mm) chip dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as motors, relays, and solenoids. FEATURES · Cost reduction available due to on-chip dumper diode (C to E) and zener diode ( C to B) · Low


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PDF 2SD2463 2SD2463 C11531E) TRANSISTOR K 314 NEC semiconductor
2002 - NEC semiconductor

Abstract: C11531E dumper diode dumper
Text: DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING (UNIT: mm) incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator , 10 k · Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A · On-chip dumper diode for reverse cable QUALITY GRADES · Standard Please refer to "Quality Grades on NEC


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PDF C11531E) NEC semiconductor C11531E dumper diode dumper
2002 - ce1a3q

Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for , On-chip zener diode for surge voltage absorption · On-chip bias resistor: R1 = 1.0 k, R2 = 10 k · Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A · On-chip dumper diode for


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2002 - Transistor NEC 30

Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING (UNIT: mm) incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements , On-chip zener diode for surge voltage absorption · On-chip bias resistor: R1 = 680 , R2 = 10 k · Low power consumption during driving: VOL = 0.3 V MAX.@V1 = 5.0 V, IC = 0.5 A · On-chip dumper diode for


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2002 - NEC diode

Abstract: transistor marking 7D 2SD1695 C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm) incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base , elements enable time and cost reduction. C to E: Dumper diode C to B: Constant diode · Low collector


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PDF 2SD1695 2SD1695 NEC diode transistor marking 7D C11531E
diode ssil

Abstract: 2SD1939 PA33 dumper diode KAG TRANSISTOR
Text: NEC D E S C R IP TIO N at E-C . NPN SILICON DARLINGTON TRANSISTOR 2SD1939 The 2SD1939 is a darlington transistor including a dumper diode PAC KAG E D IM E N S IO N S in m illim èters (inches) 52 MAX. It is suitable fo r general driving use, such as hammer, solenoid, lamp or m otor. FEATURES · High D C current gain. · High current capability, wide ASO and low collector saturation voltage. · Includes a dumper diode at E -C . AB SO LU TE M A X IM U M R A T IN G S -55 to +150 °C 150 °C Maximum 0.75 W


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PDF 2SD1939 2SD1939 diode ssil PA33 dumper diode KAG TRANSISTOR
VEBO-15V

Abstract: d1084
Text: ) incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements , On-chip zener diode for surge voltage absorption · On-chip bias resistor: R1 = 680 , R2 = 10 k · Low power consumption during driving: VOL = 0.3 V MAX.@V1 = 5.0 V, IC = 0.5 A · On-chip dumper diode for


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1998 - uPA1428

Abstract: uPA1428AH PA1428AH IEI-1213 MEI-1202 MF-1134
Text: CURRENT DUMPER DIODE CHARACTERISTICS 10 100 tstg 1 tf ton 0.1 0.1 10 1 100 m 10 m 1 IC - Collector Current - A 4 IF(E-C) - Dumper Diode Forward Current - A ton, tstg, tf - Switching Time - µ s IC /IB = 500 10 0 1.0 1 3.0 VF(E-C) - Dumper Diode


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2002 - CE1F3P

Abstract: No abstract text available
Text: PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for , On-chip dumper diode for reverse cable ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Symbol , (UNIT: mm) FEATURES · On-chip zener diode for surge voltage absorption · On-chip bias resistor: R1


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2002 - Not Available

Abstract: No abstract text available
Text: transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode , consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A • On-chip dumper diode for reverse cable , equipments and electric equipments. PACKAGE DRAWING (UNIT: mm) FEATURES • On-chip zener diode for


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2002 - Not Available

Abstract: No abstract text available
Text: transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode , €¢ On-chip dumper diode for reverse cable ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Symbol , ) FEATURES • On-chip zener diode for surge voltage absorption • On-chip bias resistor: R1 = 2.2 kâ


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2002 - 2SD1695

Abstract: C11531E
Text: connection transistor and PACKAGE DRAWING (UNIT: mm) incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base , elements enable time and cost reduction. C to E: Dumper diode C to B: Constant diode · Low collector


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2SD1843

Abstract: No abstract text available
Text: connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as motors , resistance due to on-chip protection elements: C to E: Dumper diode C to B: Zener diode · Low collector


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2002 - Not Available

Abstract: No abstract text available
Text: PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to base , protection elements: C to E: Dumper diode C to B: Zener diode • Low collector saturation voltage


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2002 - C11531E

Abstract: No abstract text available
Text: ) incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator , 10 k · Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A · On-chip dumper diode for reverse cable QUALITY GRADES · Standard Please refer to "Quality Grades on NEC


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2002 - C11531E

Abstract: 2SD2463
Text: DRAWING (UNIT: mm) chip dumper diode in collector to emitter and zener diode in collector to base , · Cost reduction available due to on-chip dumper diode (C to E) and zener diode ( C to B) · Low


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2002 - Not Available

Abstract: No abstract text available
Text: mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for , On-chip zener diode for surge voltage absorption · On-chip bias resistor: R1 = 1.0 k, R2 = 10 k · Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A · On-chip dumper diode for


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2002 - Not Available

Abstract: No abstract text available
Text: transistor of on-chip high hFE resistor PACKAGE DRAWING (UNIT: mm) incorporating dumper diode in , power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A • On-chip dumper diode for


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