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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
LTC5582HDD#PBF LTC5582HDD#PBF ECAD Model Analog Devices Inc 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range
LTC5582HDD#3ZZPBF LTC5582HDD#3ZZPBF ECAD Model Analog Devices Inc 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range
LTC5582IDD#3ZZPBF LTC5582IDD#3ZZPBF ECAD Model Analog Devices Inc 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range
LTC5582HDD#TRPBF LTC5582HDD#TRPBF ECAD Model Analog Devices Inc 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range

dro 10 ghz Datasheets Context Search

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varactor diode model in ADS

Abstract: magnum microwave "Step Recovery Diode" ADS varactor diode MDR2100-3500 design DRO 3 to 10 GHz bandpass filter wide band MDR2100 Dielectric Resonator Oscillator DRO MDR5100-12000
Text: 9000 MHz 10 GHz 11 GHz 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 17 GHz 18 GHz 19 GHz 20 GHz 21 GHz + 10 + 10 + 10 + 10 + 10 + 10 + 10 + 10 + 10 + 10 + 10 + 10 + 10 + 10 + 10 + 10 + 10 + 10 + 10 , customer, experience the Spectrum Advantage. Features ­ 10 MHz to 14 GHz output ­ Exceptional Low , frequency 10 MHz to 1000 MHz 1-2 GHz 2-4 GHz 4-8 GHz 8-14 GHz 13 13 13 13 13 -130 -125 , 100-500 MHz 500-1000 MHz 1-2 GHz 2-4 GHz 4-8 GHz 8-14 GHz Output Power (dBm) Phase Noise @ 10


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design DRO

Abstract: Anzac Electronics Dielectric Resonator Oscillator DRO anzac doubler d-5-4 DO120 Adams-Russell fet dro 10 ghz anzac doubler design dielectric resonator oscillator shunt feedback dro
Text: . DO-100 0 0 -1 1 0 DO-120 DO-130 FREQUENCY ( GHz ) 2 65 4,0 8.5 12.0 OUTPUT POWER (dBm) MIN + + + + 10 , these frequen cies, size of the resonators usually restrict the use of DRO 's to between 3-18 GHz . Anzac, in this catalog, DRO OPERATION offers units from 2.65 GHz (3.5" x 1.92" x 1.66") to A dielectric , the DR. DRO output levels are + 10 dBm. G e n e r a ti o n Frequency Devices 455 The , transistors up to 10 GHz , and GaAs MESFETS from 4 GHz up to K band. The bipolar transistor has better FM noise


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PDF FM-102-4 FM-104 FM-106 DO-100 DO-120 DO-130 10KHz design DRO Anzac Electronics Dielectric Resonator Oscillator DRO anzac doubler d-5-4 DO120 Adams-Russell fet dro 10 ghz anzac doubler design dielectric resonator oscillator shunt feedback dro
2010 - x-band dro

Abstract: Dielectric Resonator Oscillator DRO HMC-C200 HMC698LP5 hmc698 design DRO dielectric resonator oscillator radar sensor x-band accuracy X-band low noise amplifiers
Text: 1: The HMC-C200 Dielectric Resonator Oscillator ( DRO ) module covers 8.0 to 8.3 GHz . receiver , frequency from 8.0 to 8.3 GHz . Hittite will release additional DRO standard products covering 8 GHz to 12 GHz over the coming months. The HMC-C200 is a miniature, high performance DRO offering ultra-low , operating temperature range at 8.0 GHz . The phase noise performance at 10 kHz offset is -124 dBc/Hz, which , Noise Performance of the HMC-C200 DRO Module at 8 GHz Table 1: HMC-C200 Key Performance


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PDF HMC-C200 HMC-C200 x-band dro Dielectric Resonator Oscillator DRO HMC698LP5 hmc698 design DRO dielectric resonator oscillator radar sensor x-band accuracy X-band low noise amplifiers
Not Available

Abstract: No abstract text available
Text: ' s 1 s - VSW R AT 10 GHz FOR Qe - 1000 S ■1.5:1 Af ■±2 MHz SPURIOUS RESPONSE F O , range at a 10 kHz offset frequency around 6 GHz . Bipolar transistors N a rd a Figure 2 is an example of excellent phase noise perform­ ance in a high frequency (19.6 GHz ) Narda DRO . Per­ formance , Sources K EY SPECIFICATIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range , . offer superior performance; however, their utility is limited to about 6 GHz due to power fall off at


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PDF MIL-E-5400 MIL-E-16400
2009 - Dielectric Resonator Oscillator DRO

Abstract: resonator B69500-A9107 siemens B69500-A9107 dielectric resonator oscillator B69500 design dielectric resonator oscillator x-band dro design DRO microwave transistor siemens BFP405
Text: Resonator Oscillator ( DRO ) at 10 GHz using BFP405 Revision History: 2007-07-12, Rev. 2.1 Previous Version , , 2007-07-12 Application Note No. 002 Silicon Bipolar - Dielectric Resonator Oscillator ( DRO ) at 10 GHz 1 Silicon Bipolar - Dielectric Resonator Oscillator ( DRO ) at 10 GHz Oscillators represent the , ) Figure 1 Lab-version of a parallel feedback stabilized oscillator at 10 GHz This DRO is shown , , 2007-07-12 Application Note No. 002 Silicon Bipolar - Dielectric Resonator Oscillator ( DRO ) at 10 GHz


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PDF Mtt-16, MTT-27, Dielectric Resonator Oscillator DRO resonator B69500-A9107 siemens B69500-A9107 dielectric resonator oscillator B69500 design dielectric resonator oscillator x-band dro design DRO microwave transistor siemens BFP405
2010 - dro 10 ghz

Abstract: Schematic diagram of DRO
Text: HMC-C200 v05.0510 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V , Sensitivity 10 -6 Frequency & Power vs. Tuning Voltage [1] 8.202 15 FREQUENCY ( GHz ) 8.201 12.5 , HMC-C200 v05.0510 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Application Notes DRO , Typical Applications The HMC-C200 DRO Module is ideal for: · Test & Measurement Equipment · Lab


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PDF HMC-C200 HMC-C200 dro 10 ghz Schematic diagram of DRO
magnum microwave

Abstract: No abstract text available
Text: 7000 Series - Phase-Locked DRO , Dual loop ExternaL 10 Mhz Reference. re fe r e n c e to th e , n e + 10 dBm a t 20 GHz . p h a s e - lo c k e d to GHz w ith output powers ranging from +17 dBm a t 2.5 GHz to They c o n s is t o f a v o lta g e tuned DRO cry sta l o s c illa t o r v ia a of Th is a , DRO w ilt c o n tin u e to sweep (se a rch ) over the f u l l range. 10 VDC, 1000 ppm. co rre sp o n d , 20 GHz range. This material has a dielectric constant o f about 38. At 10 GHz the resonator is


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PDF 000015b magnum microwave
Not Available

Abstract: No abstract text available
Text: VSWR AT 10 GHz FOR Qg - 1000 S = 1.5 1 At = *2 MHz SPURIOUS RESPONSE FOR S * 3:1 Af *  , dBc per Hz range at a 10 kHz offset frequency around 6 GHz . Bipolar transistors Narda Figure 2 , perform­ ance in a high frequency (19.6 GHz ) Narda DRO . Per­ formance is comparable to that expected on , K EY SPECIFICA TIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range and , . offer superior performance; however, their utility is limited to about 6 GHz due to power fall off at


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PDF MIL-E-5400 MIL-E-16400
2003 - dielectric resonator oscillator

Abstract: Dielectric Resonator Oscillator DRO
Text: Voltage Controlled DRO center frequencies from 8 to 22 GHz (Specify center frequency at time of order , Connector Module ORDERING INFORMATION For DRO Frequency ( GHz ) 10.664 Order Part Number M635 , DESCRIPTION The M635 Voltage Controlled DRO (Dielectric Resonator Oscillator) is specifically designed for , , and a tuning range of up to 40MHz, the DRO can be used in both OC-192 and OC-768 applications. Its , linear and broad tuning range of 10 to 40MHz Ideal for high-speed fiber optic applications Single 5V


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PDF OC-192 22GHz, 40MHz, OC-768 11Mar2003 dielectric resonator oscillator Dielectric Resonator Oscillator DRO
Not Available

Abstract: No abstract text available
Text: HMC-C200 v06.0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz Features DROS - CONNECTORIZED Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single , (Parallel to Connectors) Z - axis -7 10 2 12.5 G - SENSITIVITY (g /Hz) FREQUENCY ( GHz , 10 OFFSET FREQUENCY (Hz) VTUNE (V) [1] For DRO tuned to 9.5V nominal VT Absolute Maximum , .0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz DROS - CONNECTORIZED Application Notes DRO


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PDF HMC-C200 HMC-C200
2012 - Not Available

Abstract: No abstract text available
Text: Frequency: 8.0 - 8.3 GHz DROs - Connectorized Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single , FREQUENCY ( GHz ) -40 + 25 C - 40 C + 85 C 8.2005 8.2 8.1995 8.199 10 3 10 4 , FREQUENCY ( GHz ) 8.201 12.5 G - SENSITIVITY (g /Hz) 10 -7 X - Axis (Perpendicular to , Instructions Each HMC-C200 DRO requires tuning to a specific frequency in the 8.0 - 8.3 GHz range. To order an , .0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz Application Notes DROs - Connectorized DRO Tuning


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PDF HMC-C200 HMC-C200
2003 - gunn diode ghz s-parameter

Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
Text: CENTER 11.2517664 GHz *RBW 1.0 K Hz *VBW 100 Hz SPAN 220.0 K Hz SWP 5.50 sec Figure 16a. DRO , , this article will demonstrate a DRO design at 11.25 GHz with one of NEC's new super low cost plastic , set to 0° to set the overall loop phase to 0° as well. - 1.0 Frequency 11.0 to 11.5 GHz res_tb , GHz Figure 10 . DR and FET Reflection Coefficients from Linear Circuit Simulation Dielectric , -120 -150 -180 -210 -240 -270 -300 M1 M2 8 10 M1: Frequency = 11.25 GHz Value =


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PDF AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
2000 - design DRO

Abstract: Gunn Diode dro 10 ghz design dielectric resonator oscillator dielectric resonator Dielectric Resonator Oscillator DRO
Text: frequency pulling figure for an unbuffered (at 10 GHz ) DRO is typically less than 5 MHz peak-to-peak for a , ) ceramic material, often barium titanate (Ba2Ti9O20). This material exhibits a high Q (9000 @ 10 GHz ) and , Frequency drift (MHz) -55 to +85°C DRO ±3 MHz GUNN DIODE ± 10 MHz CAVITY ±100 MHz VCO ±30 MHz , INTRODUCTION TO DROS INTRODUCTION TO DRO 's A DRO , or Dielectric Resonator Oscillator, is a , 's DRO circuits utilize both silicon bipolar transistors and GaAs MESFET devices. All microwave


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2012 - Not Available

Abstract: No abstract text available
Text: HMC-C200 v06.0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz Features Tuning Frequency: 8.0 - 8.3 GHz DROs - Connectorized Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single , FREQUENCY ( GHz ) -40 + 25 C - 40 C + 85 C 8.2005 8.2000 8.1995 8.1990 10 3 10 4 , FREQUENCY ( GHz ) 8.201 12.5 G - SENSITIVITY (g /Hz) 10 -7 X - Axis (Perpendicular to , OSCILLATOR MODULE 8.0 - 8.3 GHz Application Notes DROs - Connectorized DRO Tuning Procedure: 1. A


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PDF HMC-C200 HMC-C200
2009 - Dielectric resonator oscillator

Abstract: No abstract text available
Text: HMC-C200 v00.0509 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Customizable Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -124 dBc/Hz @ 10 kHz Offset Single Positive , , 8.0 - 8.3 GHz Frequency & Power vs. Tuning Voltage 8.202 15 Vibration Sensitivity 10 -6 G - SENSITIVITY (g /Hz) FREQUENCY ( GHz ) 8.201 10 -7 X - Axis (Perpendicular to , dBm Typical Applications The HMC-C200 DRO Module is ideal for: · Test & Measurement Equipment ·


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PDF HMC-C200 HMC-C200 Dielectric resonator oscillator
Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640

Abstract: Dielectric Resonator Oscillator at 11.92GHz BFP640 dielectric resonator VPS05605 BFP640 noise figure fet dro 10 ghz fet dro RF TRANSISTOR 10 GHZ low noise diagram radar circuit
Text: 11.92 GHz DRO Silicon Discretes Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 , oscillation Output power 1 11.92 GHz 0.8 dBm 2002-07-30 11.92 GHz DRO Silicon Discretes Vcc , Biasing DR BFP640 2 2002-07-30 11.92 GHz DRO Silicon Discretes Application board and , housed in a 4-lead SOT-343 surface mount package. With a transition frequency in excess of 36 GHz , this , noise DRO application 4 2 1 VPS05605 B, 1 4, E E, 2 3, C Top View Introduction


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PDF 92GHz BFP640 BFP640 OT-343 OT343 Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Dielectric Resonator Oscillator at 11.92GHz dielectric resonator VPS05605 BFP640 noise figure fet dro 10 ghz fet dro RF TRANSISTOR 10 GHZ low noise diagram radar circuit
dro 10 ghz

Abstract: cti dro
Text: GHz Phase Noise -dBc/Hz 10 GHz Phase Noise -dBc/Hz 15 GHz 10k -100 -80 -75 , . DRO 3-8 GHz DRO 8-12 GHz DRO 11-18 GHz Communication Techniques , complete line of free-running fundamental DROs covering the range 3 to 18 GHz . Designed for use in both , . Typical phase-noise for a 5 GHz unit is -125 dBc at 100 kHz offset. Output power is normally +14 dBm with , power consumption and low cost make CTI's DRO products the best value on the market today. Output


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DIELECTRIC RESONATOR OSCILLATOR 8-18 GHZ

Abstract: F5120 dro 10 ghz general microwave M5180 M5120
Text: Catalog D K C jk Over the past decade, the DRO has become the oscillator of choice for , highperformance line of DROs in the 5-18 GHz frequency range featuring 1.5 ppm/°C frequency stability over a wide , . GaAs FETs are used as the active device in the 8-18 GHz range, and sil icon bipolar transistors in the 5-8 GHz range. Buffer ampli fiers and voltage regulators are included as standard features to further , frequency of the DRO over a narrow band. Complete specifications are provided on page 182. Catalog DRO


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PDF F5080 M5080 F5120 M5120 F5180 M5180 DIELECTRIC RESONATOR OSCILLATOR 8-18 GHZ F5120 dro 10 ghz general microwave M5180 M5120
design DRO

Abstract: dro 10 ghz Pldro
Text: LOW NOISE PHASE LOCKED DRO 37 SPECIAL FEATURES This PLDRO uses two phase lock loops for good phase noise performance. The 6.6 GHz DRO , which drives the far-out noise levels, is phase locked , Frequency: 6.6 GHz Input Reference Signal: 5 MHz @ + 2 dBm ± 3 dB Output Power: + 10 dBm ± 2 dB SSB , function of the phased locked PLXO and input 5 MHz reference. The stand alone dual output DRO consumes , for operation over the 3 to 7 GHz frequency range, and single output versions are available in


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sampling phase detector SPD

Abstract: SPD3465-012 SPD3510-XX SPD3465 SPD3472-020 Sampling Phase Detectors SPD3465-020 SPD-3471-012 SPD3471-012
Text: comb of harmonic frequencies. The harmonic frequency that matches the operating frequency of the DRO or the VCO, is mixed with the DRO /VCO output signal in the pair of Schottky diodes. The "IF' output , DRO /VCO signal is sampled and stored in the capacitor. This voltage is then smoothed by the rc time constant of the filter circuit. If subse quent amplitudes are the same, the DRO /VCO is in lock; if not , of any VCO/ DRO and lock them to a reference signal generated by a quartz crystal or SAW oscillator in


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PDF 20GHz SPD3510-XX sampling phase detector SPD SPD3465-012 SPD3510-XX SPD3465 SPD3472-020 Sampling Phase Detectors SPD3465-020 SPD-3471-012 SPD3471-012
2009 - hmc789

Abstract: x-band dro HMC784 HMC764LP6CE mmic AMPLIFIER x-band 10w HMC831LP6C 358 ez 802 E-band mmic HMC82 HMC807LP6CE
Text: RSPECL HMC874LC3C · Input Bandwidth: 10 GHz · Power Dissipation: 150mW · RSCML also Available See , . The HMC-C200 DRO features a customizable tuning frequency from 8.0 to 8.3 GHz , with -124 dBc/Hz SSB , 10 Single Supply: +5V 0.7 0.8 0.9 1 1.1 FREQUENCY ( GHz ) HMC758LP3E GaAs , 1.8 2 2.2 2.4 RF FREQUENCY ( GHz ) 24 Lead 4x4mm QFN Package GaAs MMIC 10 Watt T/R , 0.10 -115 -142 + 10 190 0.10 Part Number Frequency Band ( GHz ) New


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PDF HMC756 cons31-475100 hmc789 x-band dro HMC784 HMC764LP6CE mmic AMPLIFIER x-band 10w HMC831LP6C 358 ez 802 E-band mmic HMC82 HMC807LP6CE
2008 - HMC-T210

Abstract: HMC765LP6CE Dielectric Resonator Oscillator DRO HMC807 HMC-T2100 mhemt HMC-C200 HMC784 HMC637LP5 SOIC-82
Text: Bandwidth: 10 GHz · Power Dissipation: 150mW · RSCML also Available See Page 7 XDRO DRO HMC-C200 DRO 8.0GHz8.3GHz -124dBc / Hz 10kHz SSB HMC-C200 Dielectric Resonator , 2Fo Phase Noise (dBc/Hz) Output Frequency (@ 10 kHz Offset, *Integer Mode, ( GHz ) Fcomp = 50 MHz , 2009 # 1010 & 1110 VCO VVCO -170 100 1000 10 4 10 5 10 6 10 FREQUENCY OFFSET (Hz) 75 (Continued on page 6) DRO DRO HMC754S8GE · High Output IP2


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PDF HMC756 665MHz13 VCOPLL665MHz3 3GHz13 220MHz HMC826LP6CE HMC764LP6CE ISO9001 HMC-T210 HMC765LP6CE Dielectric Resonator Oscillator DRO HMC807 HMC-T2100 mhemt HMC-C200 HMC784 HMC637LP5 SOIC-82
2002 - APN5001 Theory and Application of Sampling Phase

Abstract: APN5001 Theory and Application of Sampling Phase Detector comb generator Schematic diagram of DRO Sampling Phase Detector digital phase detector phase detector Sampling Phase Detectors step down transformer
Text: reference, and at the same time, suppress the phase noise of the VCO or DRO at 1 MHz. 10 k July 21 , of the DRO varies less than 10 %. 3. Sampling phase detector: The sampling phase detector SPD1102 , frequencies. It is widely used at low frequencies from 1 MHz up to 3 GHz . However, this method also has two , performance, as it eliminates the circuit self-resonance, especially at higher frequencies (13 GHz and above , Without Notice. · 200328 Rev. A APPLICATION NOTE · APN5001 10 TO 1 TURN RATIO STEP DOWN


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PDF APN5001: APN5001 Theory and Application of Sampling Phase APN5001 Theory and Application of Sampling Phase Detector comb generator Schematic diagram of DRO Sampling Phase Detector digital phase detector phase detector Sampling Phase Detectors step down transformer
1997 - resonator B69500-A9107 siemens

Abstract: microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses
Text: Resonator Oscillator ( DRO ) at 10 GHz Oscillators represent the basic microwave energy source for all , packaged bipolar transistor oscillators up to 12 GHz (Fig.1). Figure 1.: Lab-version of a parallel feedback stabilized oscillator at 10 GHz . This DRO is shown without top-plate, tuning screw and blocking , plot 10 GHz DRO Semiconductor Group 5 Edition A04 Application Note No. 002 Discrete & RF , is reached. 100 pF +3V RF - OUTPUT 27 Ohms 18 kOhms SMA-connector 1 pF opt. 10


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PDF BFP405 resonator B69500-A9107 siemens microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses
2002 - DRO lnb

Abstract: CPR 229G Norsat CPR229G 229G 8000 Series lnb c-band Norsat International
Text: blank ­ 3.4 to 4.2 GHz I ­ 4.5 to 4.8 GHz · Excellent DRO LO stability to control receiver drift and , Digital ­ PRO C-Band DRO LNB 8000 Series LNB With extensive proven reliability in the field, the 8000 series remains Norsat' s premium quality digital C-Band DRO LNB. The 8000 Series is , GHz · 8000I: 4.5 to 4.8 GHz Input VSWR · 2 :1 IF Output Frequency · 8000: 950 to 1750 MHz · , minimum Power Requirements Local Oscillator Frequency · 8000: 5.15 GHz · 8000I: 5.95 GHz


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PDF 8000I: DRO lnb CPR 229G Norsat CPR229G 229G 8000 Series lnb c-band Norsat International
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