The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1172CT#31 Linear Technology IC IC,SMPS CONTROLLER,CURRENT-MODE,BIPOLAR,ZIP,5PIN,PLASTIC, Switching Regulator or Controller
TMS45160L-80DZ Texas Instruments 256KX16 FAST PAGE DRAM, 80ns, PDSO40
TMS45160S-10DZ Texas Instruments 256KX16 FAST PAGE DRAM, 100ns, PDSO40
TMS45160P-10DZ Texas Instruments 256KX16 FAST PAGE DRAM, 100ns, PDSO40
TMS45160S-70DZ Texas Instruments 256KX16 FAST PAGE DRAM, 70ns, PDSO40
TMS45160-10DZ Texas Instruments 256KX16 FAST PAGE DRAM, 100ns, PDSO40

dram zip 256kx16 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
27c eeprom

Abstract: AS27C256 92132 eeprom dip 36 uv 256Kx1 dram pinout FLASH MEMORY 29F 2MX16 eeprom MT42C4256 FPM DRAM 4Mx1 sram
Text: , 5V & 3.3V FPM / EDO / DRAM 4MEG MCM (128k x 32, 5V, 3.3V) 1 MEG (128K x 8 5V & 3.3V) 4 , DENSITY (KBITS) CONFIG. FEATURES PART # SMD # 5962- SPEED (NS) DRAM 256 256K x 1 FPM AS4C1259 DRAM 256 64K x 4 OE/FPM AS4C4067 DRAM 1,024 1M x 1 FPM AS4C1024 DRAM 1,024 256K x 4 FPM AS4C4256 90617 4,096 1M x 4 FPM MT4C4001J 90847 DRAM 4,096 4M x 1 FPM MT4C1004J EEPROM 1,024 128K x 8 128 Byte Page


Original
PDF 16MEG 64Kx4) 256Kx1) 256Kx4) 512Kx32 1Mx16, 2Mx32 4Mx16, 1Mx32 2Mx16, 27c eeprom AS27C256 92132 eeprom dip 36 uv 256Kx1 dram pinout FLASH MEMORY 29F 2MX16 eeprom MT42C4256 FPM DRAM 4Mx1 sram
1997 - 3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 16Mbit FRAM HM62832 hm62256 Dram 168 pin EDO 8Mx8 flash 32 Pin PLCC 16mbit HN27C1024
Text: CP;TTP 5.0 DRAM FPM 256kx16 70;80 40 CP;TTP 5.0 nnd 4Mbit DRAM FPM 256kx16 60;70;80 40;44 CP;TTP 5.0 1k refresh HM514270D 4Mbit DRAM FPM 256kx16 60;70;80 40;44 CP;TTP 5.0 512 refresh HM514260C/CL 4Mbit DRAM FPM 256kx16 60;70;80 40;44 CP;TTP 5.0 nnd HM514260D 4Mbit DRAM FPM 256kx16 60;70;80 40;44 CP;TTP 5.0 HM514265C 4Mbit DRAM EDO 256kx16 60;70;80


Original
PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 16Mbit FRAM HM62832 hm62256 Dram 168 pin EDO 8Mx8 flash 32 Pin PLCC 16mbit HN27C1024
1998 - RAS 2415

Abstract: TC514265DJ TC514265DFT60 TMS45165DZ TC514260DFT70 TC514265DFT-50 mt4c16257dj TMS44165DZ HM51S260C TC514265DFT
Text: with an Am186ED than with an Am186ED and a single 256Kx16 DRAM . The higher cost is associated with the , with wait states. t April 1997 Rev 1.1 1 DRAM Availability The availability of 256Kx16 , contacted about the expected length of support for the 256Kx16 DRAM . Below is the information resulting , expecting to support 256Kx16 DRAM for the next 2 or 3 years. Depending on the volume and market size after , market. They are not taking any new designs using the 256Kx16 DRAM . This has been public information for


Original
PDF Am186ED Am186ES 256Kx16 TC514265DJS TC514265DFTS TC514265DJ RAS 2415 TC514265DJ TC514265DFT60 TMS45165DZ TC514260DFT70 TC514265DFT-50 mt4c16257dj TMS44165DZ HM51S260C TC514265DFT
2000 - M5M418165

Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 TR-81090 FLASH CROSS la 4620 256K16
Text: 512K×18 1Mx18 256K×36 512Kx36 DRAM 4M 256K×16 5V Fast page 16M 64M 1M×16 4M×4 , 256Kx16 AS7C4098 12/15/20 SOJ (44), TSOP2 (44) Production 1M 4M Comments 10 ns , 256Kx16 AS7C34098 10/12/15/20 SOJ (44), TSOP2 (44) Production 1M 4M 1.65V to 3.6V , (48/36) Production 7×11mm CSP AS6UB25616 256Kx16 AS6UA5128 AS6WA5128 4M 55/70/100 , (48), TSOP2 (44) Production 7×11mm CSP 7×11mm CSP 256Kx16 8M 16M 1 2 AS6VA25616


Original
PDF Q4--2000 1Mx18 512Kx36 SE-597 x2255 M5M418165 NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 TR-81090 FLASH CROSS la 4620 256K16
1998 - 80C186

Abstract: EPROM AMD
Text: RD D15-D0 DATA OE Am186ES 256Kx16 DRAM HOLD CLKOUTA LCS TMROUT0 HLDA AD0 BHE WR , 256Kx16 DRAM CASL DRAM Control CASH RAS WE A8-A0 AMD Embedded Processor Division, Am186ED , A19-A0 (MA9-MA0) 256Kx16 DRAM D15-D0 Address 256Kx16 DRAM A8-A0 RD OE WR WE , , lower system cost, with a built-in DRAM controller AMD Embedded Processor Division, Am186ED Technical Overview Memory Market Update Systems in Silicon · DRAM prices crashing ­ High-volume of DRAM


Original
PDF Am186ED 386-class mid-1995 16-bit 16-bit 80C186 EPROM AMD
tsop-56 samsung

Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg THNCF1G02DG TSOP1-48 THNCF1G02DGI THNCF128MMG toshiba Nand flash bga TC58NVG0S3AFTI5 SD-M512
Text: . Based on the three core memory technologies: DRAM (dynamic random access memory), SRAM (static random , memory for low power or space constrained applications, and high performance DRAM for high speed , Wireless) DRAM FLASH SRAM PSRAM NOR Multi-Chip Packages Low Power Asynchronous High Performance DRAM (High Speed) FCRAM DRAM XDR September 2004 Toshiba America Electronic Components , Status *1 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 256Kx16 256Kx16 256Kx16


Original
PDF 576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 tc58fvm5t2atg THNCF1G02DG TSOP1-48 THNCF1G02DGI THNCF128MMG toshiba Nand flash bga TC58NVG0S3AFTI5 SD-M512
ramdac

Abstract: SPC8106FOb SPC8011F DRAM Control 256Kx16bit 64 X 1 Dram controller SPC8108FOC
Text: monochrome STN-LCD Part number Feature 3.3V operation Applicable to 16-bit ISA bus · 256KX16 bits DRAM , cursor · 5.0V/3.3V operation Applicable to 16-bit ISA bus · 256KX16 bits DRAM control · Built-in RAMDAC , /32-bit PCI-bus/32-bit 486DX33MHz Local-bus · Two 256KX16 bits DRAM control ·Built-in 256X18 bits RAMDAC · 256KX16 bits DRAM control · Extended VGA 1024X768 256 color · Internal Hardware accelerator , -bit DRAM control · 16-level gray scale · 5V operation · Applicable to 16-bit ISA bus · 256KX16bit DRAM


OCR Scan
PDF SPC810X 16-bit 256KX16 16-level 256KX 256KX16bit ramdac SPC8106FOb SPC8011F DRAM Control 64 X 1 Dram controller SPC8108FOC
256kx16 ucas zip

Abstract: No abstract text available
Text: (V)16256 has conventional DRAM mode which is selectable by a timing setting when RAS falls. The MSM5416256 has conventional two CAS type 256KX16 DRAM compatible pinout. FEATURES Selectable function mode; Burst mode and DRAM mode Hyper page mode _ Byte wide control: 2 CAS control Write-per-bit ( not persistent write-per-bit) 262,144 words by 16 bits organization Pin compatible with 2 CAS type 256KX16 DRAM , GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration


OCR Scan
PDF MSM5416256/MSM54V16256 MSM5416256 256KX16 MSM54 DQ8-15 245MG 256kx16 ucas zip
1996 - mb87020

Abstract: tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB506 ULTRA HIGH FREQUENCY PRESCALER MB3776A mb501l
Text: . 1 Memory Products DRAMs SGRAMs Synchronous DRAMs (SDRAMs) DRAM Modules SDRAM Modules pg , Display pg. 27 pg. 27 Part Number Guide 1 Megabit-A DRAMs 4 Megabit DRAMs DRAM Modules SDRAM , assembly plant in Dublin, Ireland, since 1980, and in 1991 a fully automated DRAM module assembly line was installed to help cater to the massive demand for DRAM modules for the PC upgrade market , Time Max Organization (ns) MB81C1000A -60 -70 1M CMOS DRAM FPM* 1M x 1 MB81C4256A


Original
PDF SD-SG-20342-9/96 mb87020 tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB506 ULTRA HIGH FREQUENCY PRESCALER MB3776A mb501l
AA 170 circit diagram

Abstract: 256KX16 MSM5416256 ucas zip
Text: DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance graphics applications. In addition to the burst mode, the MSM54(V)16256 has conventional DRAM mode which is selectable by a timing setting when RAS falls. The MSM5416256 has conventional two CAS type 256KX16 DRAM compatible pinout. FEATURES • Selectable function mode; Burst mode and DRAM mode • Hyper page mode _ , words by 16 bits organization • Pin compatible with 2 CAS type 256KX16 DRAM • Single +5V Supply, Â


OCR Scan
PDF MSM5416256/MSM54V16256 MSM5416256 256KX16 MSM54 DQ8-15 b72M2M0 b7S424D AA 170 circit diagram MSM5416256 ucas zip
HY514260B

Abstract: hy514260bjc HY514260
Text: HY514260B 256Kx16 , CMOS DRAM with /2CAS DESCRIPTION This family is a 4M bit dynamic RAM , 256Kx16 ,FP DRAM Rev.10 / Jan.98 2 VCC VSS HY514260B PIN CONFIGURATION (Marking Side) VCC , Ground 256Kx16 ,FP DRAM Rev.10 / Jan.98 3 HY514260B ABSOLUTE MAXIMUM RATING Symbol , IOH = -5.0mA 2.4 - V 256Kx16 ,FP DRAM Rev.10 / Jan.98 4 HY514260B DC , . Operating condition for 50ns part is Vcc=5V¡ ¾ %,Cout 50pF. 5 256Kx16 ,FP DRAM Rev.10 / Jan.98 5


Original
PDF HY514260B 256Kx16, 16-bit 16-bits 256Kx16 HY514260B hy514260bjc HY514260
1995 - IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 KM4232W259Q60 GM72V1682 IBM025171LG5D-70 KM44S4020AT KM416S1120A
Text: /s MSM5416257A Burst DRAM 4M 256Kx16 50ns 80MHz 160MB/s MSM5416258A EDO 4M , SGDRAM 8Mb 4Mx4 2Mx8 1Mx16 256kx16 DRAM port, 512x16 SAM 256kx32 DRAM , 128x16 SAM 256K X32 , 16M 16M 16M 2M 4M 8M 16M 16M 16M 1Mx4 1Mx4 256Kx16 256Kx16 2Mx8 2Mx8 1Mx16 1Mx16 , 256kx16 256Kxl6 16M 4Mx4 4k ref 4Mx4 4k ref 4Mx4 2k ref 4Mx4 2k ref 4Mx4 4k ref 4Mx4 4Mx4 2k , 1k ref 4MX4 2Mx8 lMxl6 256Kx16 50/60/70 ns 50MHz 50/60/70 50MHz 6O/7O/8O 41.6 MHz 60/70/80


Original
PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 KM4232W259Q60 GM72V1682 IBM025171LG5D-70 KM44S4020AT KM416S1120A
HY514260B

Abstract: HY514260BJ
Text: •HYUNDAI HY514260B 256Kx16 , CMOS DRAM with /2CAS DESCRIPTION This family is a 4M bit dynamic RAM , Semiconductor -HYUNDAI HY514260B FUNCTIONAL BLOCK DIAGRAM DQO ~ DQ15 256Kx16 ,FP DRAM Rev.10 / Jan .98 2 -HYUNDAI , A0-A8 Address Input DQ0-DQ15 Data In/Out Vcc Power (5V) Vss Ground 256Kx16 ,FP DRAM Rev.10 / Jan .98 3 , 4.2mA - 0.4 V Voh Output High Voltage loh = -5.0mA 2.4 - V 256Kx16 ,FP DRAM Rev.10 / Jan .98 4 -HYUNDAI , . 256Kx16 ,FP DRAM Rev.10 / Jan .98 5 -HYUNDAI HY514260B AC CHARACTERISTICS (Ta = 0 °C to 70 °C, Vcc = 5V Â


OCR Scan
PDF HY514260B 256Kx16, 16-bit 16-bits DQ0-DQ15) 256Kx16 HY514260BJ
Hall Siemens

Abstract: HYB51471B MARKING AOH
Text: 256kx16 DRAM This low-power version has reduced CMOS standby current finrtrts (lyplcally from 1rnA lo 200 , SIEMENS HYB 514171BJ/BJL -50/-60/-70 256k x 16 - Bit Dynamic RAM INFORMATION NOTE 256kx16 , highlights Package outline dimension Packing 6.95 TlqwflS (Jet SIEMENS 256k X 16 DRAM ihig information , fireierr&ti vision Version 3 1 CAS it WE Version J 2 CAS ¿WE The SIEMENS 256kx16 chip design has , version runs In production. 2 SIEMENS 256k X 16 DRAM The SIEMENS parlnumber (or this version is HYB


OCR Scan
PDF 514171BJ/BJL 256kx16 256kx HYB51471B 5t4171BJ/BJL CDAC19400-H/Ag Hall Siemens MARKING AOH
HY514264

Abstract: HY514264B DSA0015545 256Kx16 lcas
Text: Bias Generator 256Kx16 ,EDO DRAM Rev.10 / Jan.97 2 VCC VSS HY514264B PIN , 2 3 4 5 6 7 8 9 10 Ground 256Kx16 ,EDO DRAM Rev.10 / Jan.97 3 HY514264B , 0.4 V VOH Output High Voltage IOH = -5.0mA 2.4 - V 256Kx16 ,EDO DRAM Rev , 256Kx16 ,EDO DRAM Rev.10 / Jan.97 5 HY514264B AC CHARACTERISTICS (TA = 0 °C to 70 °C, VCC = 5V ± , 256Kx16 ,EDO DRAM Rev.10 / Jan.97 6 HY514264B AC CHARACTERISTICS Continued 60ns 50ns Symbol


Original
PDF HY514264B 256Kx16, 16-bit 16-bits 256Kx16 HY514264 HY514264B DSA0015545 256Kx16 lcas
ct81

Abstract: chips 65555 tmed 1280x1024 256KX16 640X480 800X600 Y 60 256KX16-60
Text: 256KX16 EDO DRAM Table 4-2: Mode Support (including Video Capture/Playback) for 50ns 256KX16 EDO DRAM Table 4-3: Mode Support (including Video Capture/Playback) for 60ns 256KX16 EDO DRAM Display Memory , Table 4-1: 65555 Mode Support (including Video Capture/Playback) for 40ns 256KX16 EDO DRAM Resolution , Support (including Video Capture/Playback) for 50ns 256KX16 EDO DRAM Resolution 640x480 800x600 , (including Video Capture/Playback) for 60ns 256KX16 EDO DRAM Resolution 640x480 Color Depth (bpp) 4


Original
PDF CT81/3-97 1280X1024 256Kx16-60 40MHz CT81/3-97 ct81 chips 65555 tmed 1280x1024 256KX16 640X480 800X600 Y 60
2006 - IC1210-m128LQ

Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Text: DRAM Den Org Type Part No. 4M 256Kx16 EDO IS41C16256 256Kx16 FP IS41C16257 512Kx8 EDO , ISSI ® Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM , low to medium density DRAM products, we at ISSI are not. While many memory suppliers are not able to , line of SRAM, from 64Kbit up to 36Mbit densities. In DRAM we have a broad range of low to medium density DRAM from 4Mbit EDO DRAM up to 256Mbit DDR DRAM . In Serial EEPROM we have devices as small as


Original
PDF
1997 - m5m4v4169

Abstract: M5M4V4169CRT-10 256K-WORD M5M4V4169TP 70P3S-M 256-kword 1-OF-128 1kx16
Text: # (Clock Mask for DRAM ) 256Kx16 = 4M DRAM 7 RAS# (Row Address strobe) 1Kx16=16K SRAM , DIAGRAM 2 DRAM Column Decoder Ad3-7 1 of 32 Decode 8X16 Block DRAM 256KX16 DRAM Row , 256KX16 DRAM Row Decoder Ad0-9 1of1024 Decode 8X16 8X16 Byte Mask WB2 Lower Byte Upper , Decoder Ad3-7 1of32 Decode 8X16 Block DRAM 256KX16 DRAM Row Decoder Ad0-9 1of1024 Decode , Column Decoder Ad3-7 1of32 Decode 8X16 Block DRAM 256KX16 DRAM Row Decoder Ad0


Original
PDF M5M4V4169CRT-10 256K-WORD 16-BIT) 1024-WORD M5M4V4169CRT 144-word 16-bit 1024word m5m4v4169 M5M4V4169TP 70P3S-M 256-kword 1-OF-128 1kx16
Not Available

Abstract: No abstract text available
Text: bus interface bus One 256Kx16 self-refresh DRAM Video BIOS, software driver and utility support , [9:0] -4 DRAM Control ■<- Display Memory Graphics Map3 w (/) ■Ö o 00 o , Cl TSU2 /RAS 0 51 C03 DRAM Row Address Strobe. /LCAS (/LWE) 0 56 C03 DRAM Column Address Strobe for low byte(/LCAS), or Write Enable Strobe for low byte(/LWE), as , DRAM Column Address Strobe for high byte(/UCAS), or single Column Address Strobe(/CAS), as determined


OCR Scan
PDF PF765-02 SPC8104F SPC8104 640x480 64x6bit
Not Available

Abstract: No abstract text available
Text: VGA compatible except mode 13h 16bit ISA CPU data bus interface bus One 256Kx16 self-refresh DRAM , . Refer to the following table for details. MA[6] 0 1 # DRAM /size 1/ 256Kx16 1/ 256Kx16 CAS/WE Configuration , INTERNAL BLOCK DIAGRAM A[23:0] UD[3:0] LD(3:0} XSCL LP YD WF /LCDPWR MD(15:0] · « MA[9:0] * DRAM , Options for details. Note that there are internal pullup resistors on the inputs of these Pins. DRAM Row Address Strobe. DRAM Column Address Strobe for low byte(/LCAS), or Write Enable Strobe for low byte(/LWE


OCR Scan
PDF PF765-02 SPC8104F SPC8104 640x480 64x6bit
2010 - is62c51216al

Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS42SM16400G TSOP2-44 IS66WVE4M16ALL is45vs16160d
Text: 5V 128Kx8 IS61C1024AL 5V 4M 512Kx8 IS61C5128AL 5V 512Kx8 IS61C5128AS 5V 256Kx16 IS61C25616AL 5V 256Kx16 IS61C25616AS 5V 5V Low Power Asynchronous SRAM 10 10,12 12 12 12 10,12 , 512Kx8 256Kx16 1Mx8 512Kx16 IS62C256AL IS62C1024AL IS62C5128BL IS62C25616BL IS62C10248AL , 8M 32Kx8 32Kx16 64Kx16 64Kx16 128Kx8 128Kx16 256Kx8 128Kx24 256Kx16 512Kx8 , ) 256K 1M 2M 4M 8M 32Kx8 64Kx16 128Kx8 128Kx16 256Kx8 256Kx16 256Kx16


Original
PDF
1999 - dstn

Abstract: Flat Panel Display Controller mediagx 55XX 9210
Text: Panel Data DRAM Bank A 13 DRAM Data 13 Addr Ctrl 16 Addr Ctrl DRAM Data DRAM Controller 16 DRAM Bank B National Semiconductor is a registered trademark and MediaGX is a , Processor 18 Pixel Port 55xx I/O Companion Addr Control 4 16 3 3 13 DRAM Data Serial Configuration 16 Addr Control 9210 DSTN Controller 13 DRAM Data 24 16 Control DRAM-A 256Kx16 bit DRAM-B 256Kx16 bit LCD Power Clocks Panel Data


Original
PDF 1024x768 dstn Flat Panel Display Controller mediagx 55XX 9210
2008 - is25c64B

Abstract: IC61C1024 is62c1024al IS42VM16800E tsop2-54 IS24C16A Smart IS25C128A IS42SM16800 bga 100 pins bll option kg
Text: ) IC42S81600 3.3V 6,7 T/TG(54) EDO DRAM Den Org Part No. Vcc(VccQ) 4M 256KX16 IC41LV16256 3.3V , 5V 10,12 512Kx8 IS61C5128AS 5V 25 256Kx16 IS61C25616AL 5V 10 256Kx16 IS61C25616AS 5V , 128Kx24 IS61LV12824 3.3V 8,10 4M 256Kx16 IS61WV25616ALL/BLL 1.65V-3.6V 8,10,20 512Kx8 , 45,55,70 256Kx8 IS62WV2568ALL/BLL 1.65V-3.6V 55,70 4M 256Kx16 IS62VV25616LL 1.65V-1.95V 70,85 256Kx16 IS62WV25616ALL/BLL 1.65V-3.6V 55,70 512Kx8 IS62WV5128ALL/BLL 1.65V-3.6V 55,70 8M 512Kx16


Original
PDF
1997 - M5M4V4169

Abstract: No abstract text available
Text: strobe) KBuffer Ad2 Ad1 CAS# (Clock Mask for DRAM ) 256Kx16 = 4M DRAM 7 RAS# (Row , 256KX16 DRAM Row Decoder 8X16 Ad0-9 1 of 1024 Decode 8X16 Byte Mask MASK MASK Byte , Ad3-7 1of32 Decode 8X16 Block DRAM 256KX16 DRAM Row Decoder Ad0-9 1of1024 Decode 8X16 , 256KX16 DRAM Row Decoder Ad0-9 1of1024 Decode 8X16 8X16 Byte Mask WB2 Lower Byte Upper , Block DRAM 256KX16 DRAM Row Decoder Ad0-9 1of1024 Decode 8X16 8X16 Byte Mask WB2


Original
PDF M5M4V4169CRT-10 256K-WORD 16-BIT) 1024-WORD M5M4V4169CRT 144-word 16-bit 1024word M5M4V4169
Not Available

Abstract: No abstract text available
Text: •HYUNDAI HY514260B 256KX16 , CMOS DRAM w ith /2CAS DESCRIPTION This family is a 4M bit , -HYUNDAI HY514260B FUNCTIONAL BLOCK DIAGRAM DQO 256Kx16 ,FP DRAM Rev.10 / Jan.98 2 , LCAS UCAS ~OE A8 A7 A6 A5 A4 Vss Ground 256Kx16 ,FP DRAM Rev.10 / Jan.98 3 -HYUNDAI , 256Kx16 ,FP DRAM Rev.10 / Jan.98 4 -HYUNDAI HY514260B DC CHARACTERISTICS (T a = 0°C to 70 , is V c c = 5 V ; 5%,Cout 50pF. 256Kx16 ,FP DRAM Rev.10 / Jan.98 5 -HYUNDAI HY514260B


OCR Scan
PDF HY514260B 256KX16, 16-bit 16-bits 256Kx16
Supplyframe Tracking Pixel