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Part Manufacturer Description Datasheet Download Buy Part
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode t25 4 j6 Datasheets Context Search

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2007 - diode t25 4 j6

Abstract: SCHEMATIC VGA serial port to 4 pin usb 14 pin vga to rca cable schematic SCHEMATIC USB to VGA vga to rca schematic smd diode s5d schematic vga switch SCHEMATIC VGA board smd diode s1B S5B smd
Text: VGAB_I USB2.OD­_I VGAG_I T33 DVDD J7-5 J7- 4 VGAV_I J7-13 J6 MIC_I CVBS_I , Figure 4 . Once a selection is made, the software automatically sets the logic value for the ADG790 , High Low High Low High S/D High Low Low Low Low Low Low Low Low Figure 4 . Function , 4 of 12 C1 + 10µF R4 100k DVDD C2 0.1µF R5 100k DVDD C3 0.1µF R7 10k , XTALOUT 4 C12 12pF A0 A1 A2 A3 24LC64 C14 0.1µF 8 7 6 5 SHIELD USB-MINI-B


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PDF ADG790 EVAL-ADG790 ADG790 re663 ADG790BCBZ CY7C68013-56LFC ADP3303ARZ-3 XC1009CT-ND diode t25 4 j6 SCHEMATIC VGA serial port to 4 pin usb 14 pin vga to rca cable schematic SCHEMATIC USB to VGA vga to rca schematic smd diode s5d schematic vga switch SCHEMATIC VGA board smd diode s1B S5B smd
2008 - DIODE T25 4

Abstract: DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
Text: equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02R is a design which includes ESD rated diode , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram I/O 1 5 4 1 2 3 I/O 1 1&6 I/O 2 6 5 VDD GND I/O 2 3&4


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PDF AZC299-02R 5/50ns) DIODE T25 4 DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
2002 - diode t25 4 L8

Abstract: diode t25 4 j6 diodes t25 4 l7 FR4 dielectric constant 4.6 diode t25 4 L5 diode t25 4 j8
Text: + 3 J6 IN- 3 50 µstrip 50 µstrip C11 10 nF C12 10 nF C40 VCC J7 IN+ 4 J8 IN- 4 50 µstrip C14 10 nF , Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers · CWDM/WWDM 4 -Channel Parallel Links · , channel and modulating currents from 3mA to 50mA per channel. RF3764 may be used in 4 -fiber or 4 , Bias Current Control Range Ch 2 LD Ch 3 LD Ch 4 LD 2UGHULQJ ,QIRUPDWLRQ RF3764 Quad-Channel Edge Emitting Laser Driver (4x3.125Gbps) Failure Alarm FA 1 FA 2 FA 3 FA 4


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PDF RF3764 10Gigabit 125Gbps RF3764 330mW RO4003 diode t25 4 L8 diode t25 4 j6 diodes t25 4 l7 FR4 dielectric constant 4.6 diode t25 4 L5 diode t25 4 j8
2002 - diode t25 4 j6

Abstract: ro4003 rogers microstrip PIN photodiode 850nm
Text: Specification Min. Typ. Max. 0.1 3.0 3.125 3.3 20 80 30 100 4 3.6 25 68 110 1500 Unit Condition T=25 °C , 5 C2 6 7 C7 8 VCC J5 IN+ 3 50 µstrip C1 11 50 µstrip 12 C17 13 14 C20 VCC J6 IN+ 4 J8 IN- 4 15 16 , C1 10 nF 50 µstrip C17 10 nF 9 10 11 12 13 14 VCC J6 IN+ 4 J8 IN- 4 C20 10 nF 15 16 50 µstrip 50 , Transceivers · CWDM/WWDM 4 -Channel Parallel Links Product Description The RFW3754 is a quad-channel integrated , per channel and modulating currents from 1mA to 18mA per channel. The device may be used in 4 -fiber or


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PDF 10Gigabit RFW3754 850nm 125Gbps 125Gbps/channel. RFW3754 RO4003 diode t25 4 j6 ro4003 rogers microstrip PIN photodiode 850nm
2002 - Not Available

Abstract: No abstract text available
Text: 14 50 Ω µstrip D2 LD C12 10 nF J6 IN+ 4 J8 IN- 4 PD IN3 VCC C30 10 nF R4 , LD C1 10 nF 11 12 33 14 50 Ω µstrip D2 LD C12 10 nF J6 IN+ 4 J8 IN , Applications • Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers • CWDM/WWDM 4 , modulating currents from 1mA to 18mA per channel. The device may be used in 4 -fiber or 4 , Current Control Range Ch 3 Ordering Information Ch 4 RF3754 Failure Alarm FA 1 FA 2


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PDF RF3754 125Gbps) 10Gigabit 125Gbps RF3754 850nm
2002 - Not Available

Abstract: No abstract text available
Text: Applications • Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers • CWDM/WWDM 4 , in 4 -fiber or 4 -wavelength quad-channel fiber optic transceiver applications operating in excess of , Quiescent Current Ch 1 LD Ch 2 LD Ch 3 LD Ch 4 LD • Common Anode Laser Driver â , Information RF3764 Failure Alarm FA 1 FA 2 FA 3 FA 4 Functional Block Diagram Rev , Ratings Parameter Rating Unit Supply Voltage 4 V Input Voltage 4 VP-P Operating


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PDF RF3764 125Gbps) 10Gigabit 125Gbps RF3764 330mW 49mmx60mm RO4003
2002 - PIN photodiode 850nm

Abstract: diode t25 4 j6
Text: Specification Min. Typ. Max. 0.1 3.0 3.125 3.3 20 80 30 100 4 3.6 25 68 110 1500 Unit Condition T=25 °C , µstrip 50 µstrip C4 2 3 4 5 C2 6 7 C7 8 VCC J5 IN+ 3 50 µstrip C1 11 50 µstrip 12 C17 13 14 C20 VCC J6 , 12 13 14 VCC J6 IN+ 4 J8 IN- 4 C20 10 nF 15 16 50 µstrip 50 µstrip C19 10 nF C18 10 nF C21 10 nF 17 , Transceivers · CWDM/WWDM 4 -Channel Parallel Links Product Description The RFW3754 is a quad-channel integrated , per channel and modulating currents from 1mA to 18mA per channel. The device may be used in 4 -fiber or


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PDF 10Gigabit RFW3754 850nm 125Gbps 125Gbps/channel. RFW3754 RO4003 PIN photodiode 850nm diode t25 4 j6
2002 - FERRITE BEAD 1000 OHM 0805

Abstract: No abstract text available
Text: Specification Min. Typ. Max. 0.1 3.0 3.125 3.3 20 80 30 100 4 3.6 25 68 110 1500 Unit Condition T=25 °C , Figure 4 . Transient Current of Laser Diode Automatic Power Control Loop (APC) The APC loop works to , C4 4 5 50 µstrip C2 6 7 C7 8 VCC J5 IN+ 3 50 µstrip C1 11 50 µstrip 12 C17 13 14 C20 VCC J6 IN+ 4 , 12 13 14 VCC J6 IN+ 4 J8 IN- 4 C20 10 nF 15 16 50 µstrip C19 10 nF C18 10 nF C21 10 nF 17 18 19 20 , Transceivers · CWDM/WWDM 4 -Channel Parallel Links RF3754 QUAD-CHANNEL VCSEL LASER DRIVER (4x3.125Gbps) ·


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PDF 10Gigabit RF3754 125Gbps) 125Gbps RF3754 850nm RO4003 FERRITE BEAD 1000 OHM 0805
2002 - DIODE T25 4 c8

Abstract: NF521 diode t25 4 j8
Text: Specification Typ. Max. 3.125 3.3 20 80 30 100 4 3.6 25 68 110 1500 Unit Condition T=25 °C, VCC =3.3V , VCC J6 IN+ 4 J8 IN- 4 C20 10 nF 15 16 50 µstrip 50 µstrip C19 10 nF C18 10 nF C21 10 nF 17 18 19 20 , + 3 50 µstrip C1 10 nF 50 µstrip C17 10 nF 9 10 11 12 13 14 VCC J6 IN+ 4 J8 IN- 4 C20 10 nF 15 16 50 , Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers · CWDM/WWDM 4 -Channel Parallel Links · , from 1mA to 18mA per channel. The device may be used in 4 -fiber or 4 -wavelength quad-channel fiber


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PDF RF3754 10Gigabit 125Gbps RF3754 850nm DIODE T25 4 c8 NF521 diode t25 4 j8
2002 - diode t25 4 j6

Abstract: t25 4 j6 Edge-Emitting Diode DFB laser bare die
Text: Digital 1 Digital 0 IBias + IMod IBias + (IMod/2) IBias Figure 4 . Transient Current of Laser Diode , Transceivers · CWDM/WWDM 4 -Channel Parallel Links Product Description The RFW3764 is a quad-channel integrated , used in 4 -fiber or 4 -wavelength quad-channel fiber optic transceiver applications operating in excess , Range Ch 1 LD Ch 2 LD Ch 3 LD Ordering Information Ch 4 LD RFW3764 Quad-Channel Edge Emitting Laser Driver (4x3.125Gbps) Failure Alarm FA 1 FA 2 FA 3 FA 4


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PDF 10Gigabit RFW3764 125Gbps 330mW 125Gbps/channel. RFW3764 49mmx60mm RO4003 diode t25 4 j6 t25 4 j6 Edge-Emitting Diode DFB laser bare die
2002 - DFB laser bare die

Abstract: diode t25 4 j6 IC LM3 diode t25 4 L8
Text: Digital 1 Digital 0 IBias + IMod IBias + (IMod/2) IBias Figure 4 . Transient Current of Laser Diode , Transceivers · CWDM/WWDM 4 -Channel Parallel Links Product Description The RFW3764 is a quad-channel integrated , used in 4 -fiber or 4 -wavelength quad-channel fiber optic transceiver applications operating in excess , Range Ch 1 LD Ch 2 LD Ch 3 LD Ordering Information Ch 4 LD RFW3764 Quad-Channel Edge Emitting Laser Driver (4x3.125Gbps) Failure Alarm FA 1 FA 2 FA 3 FA 4


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PDF 10Gigabit RFW3764 125Gbps 330mW 125Gbps/channel. RFW3764 49mmx60mm RO4003 DFB laser bare die diode t25 4 j6 IC LM3 diode t25 4 L8
2006 - diode t25 4 H9

Abstract: diode t25 4 B8 diode t25 4 G9 diode t25 4 k6 diode t25 4 H8 diode t25 4 F8 diode t25 4 e9 diode t25 4 e8 diode t25 4 L9 diode t25 4 g8
Text: DIFFIO Speed (1) H6 H5 H6 H5 J7 H7 J4 J3 J7 H7 J4 J3 J2 J1 J6 J5 K4 K3 J2 J1 J6 J5 K4 K3 K2 K1 K9 J8 K6 K5 K8 K7 L3 L2 L5 L4 K2 K1 K9 J8 K6 K5 , N19 N27 P27 P26 P25 P23 R23 R24 T32 T31 R25 R26 T30 T29 T28 T27 T25 N5 M2 N4 , R26 T28 U27 T21 T22 U26 U25 T19 T20 V27 V28 T23 T24 R19 V26 V25 T26 T25 W28 W27 , PLL6_OUT0n PLL6_OUT0p AD17 AA19 AG16 AB18 AH16 AD16 Y18 AF16 AE16 V18 W18 AA18 Page 4 of


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PDF EP1S25 PT-EP1S25-3 EP1S25. diode t25 4 H9 diode t25 4 B8 diode t25 4 G9 diode t25 4 k6 diode t25 4 H8 diode t25 4 F8 diode t25 4 e9 diode t25 4 e8 diode t25 4 L9 diode t25 4 g8
2009 - ULTVSJJ5VCESGP

Abstract: diode t25 4 A8 DIODE T25 4 diode T25-4
Text: = 5V,Vpin7 = 0V,VIN = 2.5V,f = CIN_1 Capacitance-1 1MHz, T=25 oC, pin 1~ 4 to pin 7. Channel , ULTVSJJ5VCESGP is a design which includes surge rated diode arrays to protect high speed data interfaces , unique design of clamping cell which is an equivalent TVS diode in a single package. During transient , , Level 4 (15kV air, 8kV contact discharge). ULTVSJJ5VCESGP ESD Protect for Super Speed , voltage  Array of surge rated diodes with internal equivalent TVS diode  Solid-state


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PDF 100ns ULTVSJJ5VCESGP diode t25 4 A8 DIODE T25 4 diode T25-4
2010 - ULTVSQB5VCESGP

Abstract: No abstract text available
Text: ¬ Array of surge rated diodes with internal equivalent TVS diode  Solid-state silicon-avalanche and , is a design which includes ESD rated diode arrays to protect high speed data interfaces. The , clamping cell which is an equivalent TVS diode in a single package. During transient conditions, the , operation. ULTVSQB5VCESGP may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (ï , 10 GND 8 NC 7 VDD I/O-6 9 2 I/O-5 6 I/O- 4 2 island NC 1 9


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PDF 800TYP. 031TYP. 600TYP 023TYP. 400TYP 015TYP. 200MIN. 008MIN ULTVSQB5VCESGP
2008 - Not Available

Abstract: No abstract text available
Text: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , rated diode arrays to protect high speed data interfaces. The AZ1045-02J has been specifically , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). , 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3 2


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PDF AZ1045-02J AZ1045-02J arrays300 150mm.
2008 - Not Available

Abstract: No abstract text available
Text: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , design which includes ESD rated diode arrays to protect high speed data interfaces. The AZ1045-02J has , cell which is an equivalent TVS diode in a single package. During transient conditions, the steering , -02J may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air,  , Circuit Diagram NC 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3


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PDF AZ1045-02J AZ1045-02J
2008 - Not Available

Abstract: No abstract text available
Text: 4 (± 15kV air, ±8kV contact discharge). IEC 61000-4-2 (ESD) ±16kV (air/contact) IEC , clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves , Configuration Description I/O 2 Revision 2008/12/01 ©2008-2009 Amazing Micro. NC 6 5 4 1 AZ1115-02S is a high performance design which includes surge rated diode arrays to protect , which is an equivalent TVS diode in a single package. During transient conditions, the steering diodes


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PDF AZ1115-02S AZ1115-02S 5/50ns) silicon024 113XY
2007 - Not Available

Abstract: No abstract text available
Text: Clamping Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping , Rdynamic_VDD CIN CCROSS △CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 μA VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 , Pin 4 IPP=5A, tp=8/20μs, T=25 oC Any Channel pin to Ground IEC 61000-4-2 +6kV, T=25 oC, Contact , AZC015-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, Â


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PDF AZC015-02N AZC015-02N 5/50ns) C03XY.
2008 - c09x

Abstract: AZC015-02N SOT143-4L DIODE T25 4
Text: Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping Voltage , CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 A VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 to Pin 1 1 A 9 V 0.8 1 V 8.1 9 V 6 IF = 15mA, T=25 oC Pin 1 to Pin 4 IPP=5A, tp=8/20s, T=25 , used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact


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PDF AZC015-02N AZC015-02N 5/50ns) 8/20s) techno09 C03XY. c09x SOT143-4L DIODE T25 4
2008 - Not Available

Abstract: No abstract text available
Text: equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02S is a design which includes ESD rated diode , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram I/O 1 5 4 1 2 3 I/O 1 1&6 I/O 2 6 5 VDD GND I/O 2 3&4


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PDF AZC299-02S 5/50ns) C29XY
2009 - azc199

Abstract: AZC199-02S
Text: diode Solid-state silicon-avalanche and active circuit triggering technology Green part , rated diode arrays to protect high speed data interfaces. The AZC199-02S has been specifically , diode in a single package. During transient conditions, the steering diodes direct the transient to , 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram 1 , IBV = 1mA, T=25 oC, Pin 1/2 to Pin 3 VF IF = 15mA, T=25 oC, Pin 3 to Pin1/2 MAX UNITS 1 7


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PDF AZC199-02S 5/50ns) C11XY azc199 AZC199-02S
2007 - tvs diode marking code fo

Abstract: SSEPAA5-02S data transmission through power lines DIODE MARKING CODE LAYOUT G SOT23 Firewire ESD marking code 10 sot23 tvs MARKING CODE LAYOUT SOT23
Text: , T=25 oC, 0.5 0.0 13 0 1 Peak pulse Current (A) 3 4 5 Insertion Loss S21 , of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). IEC 61000-4-2 (ESD) ±15kV (air , with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and , performance design which includes surge rated diode arrays to protect high speed data interfaces. The , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package


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PDF SSEPAA5-02S 5/50ns) 8/20s) tvs diode marking code fo SSEPAA5-02S data transmission through power lines DIODE MARKING CODE LAYOUT G SOT23 Firewire ESD marking code 10 sot23 tvs MARKING CODE LAYOUT SOT23
2005 - diode t25 4 j6

Abstract: PFM19030 PFM19030F PFM19030SM outline of the heat sink for Theta JC grm39 F219 SM4W103-ND diode t25 4 c6
Text: Gate +27 V 6 5 4 3 2 Note: Typical Q1 diode bias = 1.4 mA (VG1 ~ 3.96V) Typical Q2 diode bias = 2.7 mA (VG2 ~ 4.21V) (based on 6/ 4 /04 measurements) 1 C29 C28 S1 C27 , . -60 - - dBc - 1.9 2.1 °C/W 4 5 6 7 8 9 10 11 12 Gain Flatness over , Nominal Load Impedance for Optimum Operation 21 + j6 .3 Ohms Comments Matched for near-optimum , ) 2.75 MHz offset, 1 MHz BW. 4 ) Sense FETs are scaled versions of the main RF FETs, formed from


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PDF PFM19030 PFM19030SM diode t25 4 j6 PFM19030F PFM19030SM outline of the heat sink for Theta JC grm39 F219 SM4W103-ND diode t25 4 c6
2007 - HIGH VOLTAGE DIODE 6kv

Abstract: sot143 TOP marking 16 tvs diode marking code fo Firewire ESD SSEPAA5-02N MARKING 02n SOT143-4L
Text: MIN TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 A Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 A Reverse Breakdown Voltage VBV IBV = 1mA, T=25 oC Pin 4 to Pin 1 Forward Voltage VF IF = 15mA, T=25 oC Pin1 to Pin 4 Clamping Voltage VCL IPP=5A, tp=8/20s, T=25 oC Any Channel pin to Ground ESD Holding


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PDF SSEPAA5-02N 5/50ns) 8/20s) HIGH VOLTAGE DIODE 6kv sot143 TOP marking 16 tvs diode marking code fo Firewire ESD SSEPAA5-02N MARKING 02n SOT143-4L
2008 - AZ1045-04SU

Abstract: AZC099-04S
Text: clamping voltage Array of ESD rated diodes with internal equivalent TVS diode Solid-state , version available Green part available AZ1045-04SU is a design which includes ESD rated diode arrays , capacitance steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a , requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Applications High Definition , Diagram Pin Configuration I/O 4 3 4 5 4 1 1 I/O 3 6 5 VDD 2 3


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PDF AZ1045-04SU 8/20us) AZ1045-04SU AZC099-04S
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