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Part Manufacturer Description Datasheet Download Buy Part
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode t25 4 L8 Datasheets Context Search

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2002 - diode t25 4 j6

Abstract: t25 4 j6 Edge-Emitting Diode DFB laser bare die
Text: Digital 1 Digital 0 IBias + IMod IBias + (IMod/2) IBias Figure 4 . Transient Current of Laser Diode , Transceivers · CWDM/WWDM 4 -Channel Parallel Links Product Description The RFW3764 is a quad-channel integrated , used in 4 -fiber or 4 -wavelength quad-channel fiber optic transceiver applications operating in excess , Range Ch 1 LD Ch 2 LD Ch 3 LD Ordering Information Ch 4 LD RFW3764 Quad-Channel Edge Emitting Laser Driver (4x3.125Gbps) Failure Alarm FA 1 FA 2 FA 3 FA 4


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PDF 10Gigabit RFW3764 125Gbps 330mW 125Gbps/channel. RFW3764 49mmx60mm RO4003 diode t25 4 j6 t25 4 j6 Edge-Emitting Diode DFB laser bare die
2002 - diode t25 4 L8

Abstract: diode t25 4 j6 diodes t25 4 l7 FR4 dielectric constant 4.6 diode t25 4 L5 diode t25 4 j8
Text: Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers · CWDM/WWDM 4 -Channel Parallel Links · , channel and modulating currents from 3mA to 50mA per channel. RF3764 may be used in 4 -fiber or 4 , Bias Current Control Range Ch 2 LD Ch 3 LD Ch 4 LD 2UGHULQJ ,QIRUPDWLRQ RF3764 Quad-Channel Edge Emitting Laser Driver (4x3.125Gbps) Failure Alarm FA 1 FA 2 FA 3 FA 4 , Ratings Parameter Rating Unit Preliminary Supply Voltage 4 V Input Voltage 4 VP-P Operating


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PDF RF3764 10Gigabit 125Gbps RF3764 330mW RO4003 diode t25 4 L8 diode t25 4 j6 diodes t25 4 l7 FR4 dielectric constant 4.6 diode t25 4 L5 diode t25 4 j8
2002 - Not Available

Abstract: No abstract text available
Text: Applications • Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers • CWDM/WWDM 4 , in 4 -fiber or 4 -wavelength quad-channel fiber optic transceiver applications operating in excess of , Quiescent Current Ch 1 LD Ch 2 LD Ch 3 LD Ch 4 LD • Common Anode Laser Driver â , Information RF3764 Failure Alarm FA 1 FA 2 FA 3 FA 4 Functional Block Diagram Rev , Ratings Parameter Rating Unit Supply Voltage 4 V Input Voltage 4 VP-P Operating


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PDF RF3764 125Gbps) 10Gigabit 125Gbps RF3764 330mW 49mmx60mm RO4003
2002 - DFB laser bare die

Abstract: diode t25 4 j6 IC LM3 diode t25 4 L8
Text: Digital 1 Digital 0 IBias + IMod IBias + (IMod/2) IBias Figure 4 . Transient Current of Laser Diode , Transceivers · CWDM/WWDM 4 -Channel Parallel Links Product Description The RFW3764 is a quad-channel integrated , used in 4 -fiber or 4 -wavelength quad-channel fiber optic transceiver applications operating in excess , Range Ch 1 LD Ch 2 LD Ch 3 LD Ordering Information Ch 4 LD RFW3764 Quad-Channel Edge Emitting Laser Driver (4x3.125Gbps) Failure Alarm FA 1 FA 2 FA 3 FA 4


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PDF 10Gigabit RFW3764 125Gbps 330mW 125Gbps/channel. RFW3764 49mmx60mm RO4003 DFB laser bare die diode t25 4 j6 IC LM3 diode t25 4 L8
2006 - diode t25 4 H9

Abstract: diode t25 4 B8 diode t25 4 G9 diode t25 4 k6 diode t25 4 H8 diode t25 4 F8 diode t25 4 e9 diode t25 4 e8 diode t25 4 L9 diode t25 4 g8
Text: K8 K7 L3 L2 L5 L4 L7 L6 L8 M6 M7 L7 L6 L8 M6 M7 M4 M5 M4 M5 N6 N7 , N19 N27 P27 P26 P25 P23 R23 R24 T32 T31 R25 R26 T30 T29 T28 T27 T25 N5 M2 N4 , R26 T28 U27 T21 T22 U26 U25 T19 T20 V27 V28 T23 T24 R19 V26 V25 T26 T25 W28 W27 , PLL6_OUT0n PLL6_OUT0p AD17 AA19 AG16 AB18 AH16 AD16 Y18 AF16 AE16 V18 W18 AA18 Page 4 of , R4 U24 U23 U24 U23 V19 U20 U26 U25 U19 U18 U22 U21 T21 T20 T25 T24 T19 R19


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PDF EP1S25 PT-EP1S25-3 EP1S25. diode t25 4 H9 diode t25 4 B8 diode t25 4 G9 diode t25 4 k6 diode t25 4 H8 diode t25 4 F8 diode t25 4 e9 diode t25 4 e8 diode t25 4 L9 diode t25 4 g8
2008 - DIODE T25 4

Abstract: DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
Text: equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02R is a design which includes ESD rated diode , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram I/O 1 5 4 1 2 3 I/O 1 1&6 I/O 2 6 5 VDD GND I/O 2 3&4


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PDF AZC299-02R 5/50ns) DIODE T25 4 DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
2009 - ULTVSJJ5VCESGP

Abstract: diode t25 4 A8 DIODE T25 4 diode T25-4
Text: = 5V,Vpin7 = 0V,VIN = 2.5V,f = CIN_1 Capacitance-1 1MHz, T=25 oC, pin 1~ 4 to pin 7. Channel , ULTVSJJ5VCESGP is a design which includes surge rated diode arrays to protect high speed data interfaces , unique design of clamping cell which is an equivalent TVS diode in a single package. During transient , , Level 4 (15kV air, 8kV contact discharge). ULTVSJJ5VCESGP ESD Protect for Super Speed , voltage  Array of surge rated diodes with internal equivalent TVS diode  Solid-state


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PDF 100ns ULTVSJJ5VCESGP diode t25 4 A8 DIODE T25 4 diode T25-4
2010 - ULTVSQB5VCESGP

Abstract: No abstract text available
Text: ¬ Array of surge rated diodes with internal equivalent TVS diode  Solid-state silicon-avalanche and , is a design which includes ESD rated diode arrays to protect high speed data interfaces. The , clamping cell which is an equivalent TVS diode in a single package. During transient conditions, the , operation. ULTVSQB5VCESGP may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (ï , 10 GND 8 NC 7 VDD I/O-6 9 2 I/O-5 6 I/O- 4 2 island NC 1 9


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PDF 800TYP. 031TYP. 600TYP 023TYP. 400TYP 015TYP. 200MIN. 008MIN ULTVSQB5VCESGP
2008 - Not Available

Abstract: No abstract text available
Text: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , rated diode arrays to protect high speed data interfaces. The AZ1045-02J has been specifically , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). , 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3 2


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PDF AZ1045-02J AZ1045-02J arrays300 150mm.
2008 - Not Available

Abstract: No abstract text available
Text: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , design which includes ESD rated diode arrays to protect high speed data interfaces. The AZ1045-02J has , cell which is an equivalent TVS diode in a single package. During transient conditions, the steering , -02J may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air,  , Circuit Diagram NC 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3


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PDF AZ1045-02J AZ1045-02J
2008 - Not Available

Abstract: No abstract text available
Text: 4 (± 15kV air, ±8kV contact discharge). IEC 61000-4-2 (ESD) ±16kV (air/contact) IEC , clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves , Configuration Description I/O 2 Revision 2008/12/01 ©2008-2009 Amazing Micro. NC 6 5 4 1 AZ1115-02S is a high performance design which includes surge rated diode arrays to protect , which is an equivalent TVS diode in a single package. During transient conditions, the steering diodes


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PDF AZ1115-02S AZ1115-02S 5/50ns) silicon024 113XY
2007 - Not Available

Abstract: No abstract text available
Text: Clamping Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping , Rdynamic_VDD CIN CCROSS △CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 μA VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 , Pin 4 IPP=5A, tp=8/20μs, T=25 oC Any Channel pin to Ground IEC 61000-4-2 +6kV, T=25 oC, Contact , AZC015-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, Â


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PDF AZC015-02N AZC015-02N 5/50ns) C03XY.
2008 - c09x

Abstract: AZC015-02N SOT143-4L DIODE T25 4
Text: Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping Voltage , CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 A VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 to Pin 1 1 A 9 V 0.8 1 V 8.1 9 V 6 IF = 15mA, T=25 oC Pin 1 to Pin 4 IPP=5A, tp=8/20s, T=25 , used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact


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PDF AZC015-02N AZC015-02N 5/50ns) 8/20s) techno09 C03XY. c09x SOT143-4L DIODE T25 4
2008 - Not Available

Abstract: No abstract text available
Text: equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02S is a design which includes ESD rated diode , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram I/O 1 5 4 1 2 3 I/O 1 1&6 I/O 2 6 5 VDD GND I/O 2 3&4


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PDF AZC299-02S 5/50ns) C29XY
2009 - azc199

Abstract: AZC199-02S
Text: diode Solid-state silicon-avalanche and active circuit triggering technology Green part , rated diode arrays to protect high speed data interfaces. The AZC199-02S has been specifically , diode in a single package. During transient conditions, the steering diodes direct the transient to , 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram 1 , IBV = 1mA, T=25 oC, Pin 1/2 to Pin 3 VF IF = 15mA, T=25 oC, Pin 3 to Pin1/2 MAX UNITS 1 7


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PDF AZC199-02S 5/50ns) C11XY azc199 AZC199-02S
2007 - tvs diode marking code fo

Abstract: SSEPAA5-02S data transmission through power lines DIODE MARKING CODE LAYOUT G SOT23 Firewire ESD marking code 10 sot23 tvs MARKING CODE LAYOUT SOT23
Text: , T=25 oC, 0.5 0.0 13 0 1 Peak pulse Current (A) 3 4 5 Insertion Loss S21 , of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). IEC 61000-4-2 (ESD) ±15kV (air , with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and , performance design which includes surge rated diode arrays to protect high speed data interfaces. The , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package


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PDF SSEPAA5-02S 5/50ns) 8/20s) tvs diode marking code fo SSEPAA5-02S data transmission through power lines DIODE MARKING CODE LAYOUT G SOT23 Firewire ESD marking code 10 sot23 tvs MARKING CODE LAYOUT SOT23
2007 - HIGH VOLTAGE DIODE 6kv

Abstract: sot143 TOP marking 16 tvs diode marking code fo Firewire ESD SSEPAA5-02N MARKING 02n SOT143-4L
Text: MIN TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 A Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 A Reverse Breakdown Voltage VBV IBV = 1mA, T=25 oC Pin 4 to Pin 1 Forward Voltage VF IF = 15mA, T=25 oC Pin1 to Pin 4 Clamping Voltage VCL IPP=5A, tp=8/20s, T=25 oC Any Channel pin to Ground ESD Holding


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PDF SSEPAA5-02N 5/50ns) 8/20s) HIGH VOLTAGE DIODE 6kv sot143 TOP marking 16 tvs diode marking code fo Firewire ESD SSEPAA5-02N MARKING 02n SOT143-4L
2006 - diode t25 4 H9

Abstract: diode t25 4 L9 diode t25 4 k6 diode t25 4 k8 diode t25 4 G9 diode t25 4 F8 diode t25 4 B9 diode t25 4 g8 diode t25 4 F7 diode t25 4 L8
Text: J18 H21 H22 J20 J21 L8 N6 N7 M8 M9 L8 N6 N7 M8 M9 K20 K21 L22 L21 P8 N8 , Y10 AA10 W10 V26 V25 T26 T25 W28 W27 U19 U20 W26 W25 U24 U23 Y28 Y27 U21 U22 Y26 , Y26 Y25 Y24 Y23 U22 U21 T21 T20 T25 T24 T19 R19 AE25 AF22 AF24 AE22 AB22 AE23 AC23 , Y26 Y25 Y24 Y23 U22 U21 T21 T20 T25 T24 T19 R19 T23 T22 T23 T22 R22 R23 V20 , HIGH HIGH Page 4 of 24 Pin Information For The StratixTM EP1S10 Device, ver 3.7 (Note 2) Bank


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PDF EP1S10 PT-EP1S10-3 EP1S10F484. diode t25 4 H9 diode t25 4 L9 diode t25 4 k6 diode t25 4 k8 diode t25 4 G9 diode t25 4 F8 diode t25 4 B9 diode t25 4 g8 diode t25 4 F7 diode t25 4 L8
2008 - AZ1045-04SU

Abstract: AZC099-04S
Text: clamping voltage Array of ESD rated diodes with internal equivalent TVS diode Solid-state , version available Green part available AZ1045-04SU is a design which includes ESD rated diode arrays , capacitance steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a , requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Applications High Definition , Diagram Pin Configuration I/O 4 3 4 5 4 1 1 I/O 3 6 5 VDD 2 3


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PDF AZ1045-04SU 8/20us) AZ1045-04SU AZC099-04S
2008 - AZC099-04S

Abstract: AZ1045-04Q AZC099
Text: diode Simplified layout for HDMI connectors Solid-state silicon-avalanche and active circuit , available AZ1045-04QU is a design which includes surge rated diode arrays to protect high speed data , unique design of clamping cell which is an equivalent TVS diode in a single package. During transient , operation. AZ1045-04QU may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (Â , Configuration Circuit Diagram Line-1 2 4 2 9 NC 3 8 GND Line-3 8 NC VDD


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PDF AZ1045-04QU 1045QU AZC099-04S AZ1045-04Q AZC099
2008 - amazing

Abstract: DIODE T25 4 AZC002-02N 1394 6 pin firewire to USB Connection Diagram Diode Equivalent t25 4 1394 firewire to USB Connection Diagram 6 pin Package 02n SOT143-4L marking 5a sot143 sot143 usb tvs
Text: MIN TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 2 A Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 A Reverse Breakdown Voltage VBV IBV = 1mA, T=25 oC Pin 4 to Pin 1 Forward Voltage VF IF = 15mA, T=25 oC Pin 1 to Pin 4 0.8 1 V Clamping Voltage VCL IPP=5A, tp=8/20s, T=25 oC Any Channel pin to


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PDF AZC002-02N AZC002-02N 5/50ns) 8/20s) C04XY C06XY amazing DIODE T25 4 1394 6 pin firewire to USB Connection Diagram Diode Equivalent t25 4 1394 firewire to USB Connection Diagram 6 pin Package 02n SOT143-4L marking 5a sot143 sot143 usb tvs
2007 - Not Available

Abstract: No abstract text available
Text: TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 2 μA Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 μA Reverse Breakdown Voltage VBV IBV = 1mA, T=25 oC Pin 4 to Pin 1 Forward Voltage VF IF = 15mA, T=25 oC Pin 1 to Pin 4 , AZC002-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, Â


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PDF AZC002-02N AZC002-02N 5/50ns) C04XY C04XY.
2008 - AZ1015-02N

Abstract: EQUIVALENT 02n
Text: Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 μA Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 μA Reverse Breakdown Voltage VBV IBV = 1mA, T=25 oC Pin 4 to Pin 1 Forward Voltage VF IF = 15mA, T=25 oC Pin1 to Pin 4 Clamping Voltage VCL IPP=5A, tp=8/20μs, T=25 oC , 0V, f = 1MHz, T=25 oC, 0.5 0.0 13 0 1 Peak pulse Current (A) 2 3 4 5


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PDF AZ1015-02N 5/50ns) 102XY. AZ1015-02N EQUIVALENT 02n
2004 - Diode D25 N12

Abstract: diode AA17 diode AA19 diode t25 4 G9 diode t25 4 H9 AA12 diode diode t25 4 g8 diode t25 4 L9 diode t25 4 k8 diode M21
Text: H21 H22 J20 J21 L8 N6 N7 M8 M9 L8 N6 N7 M8 M9 K20 K21 L22 L21 P8 N8 N2 N3 , AC9 AF9 AD10 AE10 AA9 AD9 AB9 AC10 Y10 AA10 W10 AB10 AF10 AB11 V25 T26 T25 W28 W27 , T25 T24 T19 R19 AE25 AF22 AF24 AE22 AB22 AE23 AC23 AC22 AE24 AB21 AD25 AC24 AD26 , T20 T25 T24 T19 R19 U1 U2 M6 T23 T22 T23 T22 T2 T1 P5 P3 P2 R2 R1 N3 N2 , HIGH HIGH HIGH HIGH HIGH HIGH Page 4 of 19 Pin Information For The StratixTM EP1S10 Device


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PDF EP1S10 Diode D25 N12 diode AA17 diode AA19 diode t25 4 G9 diode t25 4 H9 AA12 diode diode t25 4 g8 diode t25 4 L9 diode t25 4 k8 diode M21
2008 - Not Available

Abstract: No abstract text available
Text: 0V, f = 1MHz, T=25 oC, 0.5 0.0 13 0 1 Peak pulse Current (A) 2 3 4 5 , immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). ESD Protect for , voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and active circuit triggering technology 5 3 4 Applications 2 , -02S is a high performance design which includes surge rated diode arrays to protect high speed data


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PDF AZ1015-02S 5/50ns) 101XY.
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