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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode t25 4 L5 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - diode t25 4 L5

Abstract: 09N70P DIODE T25 4 b1
Text: 4 V gfs Forward Transconductance VDS=10V, ID=4.5A - 4.5 - S IDSS , A - - 1.5 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions Continuous Source Current (Body Diode ) VD=VG=0V , VS=1.5V 1 Pulsed Source Current (Body Diode ) Forward , junction temperature. o 2. Starting T=25 C , VDD=50V , L=6.8mH , RG=25Ω , IAS=9A. j 3. Pulse test - , =150 C 8 ID , Drain Current (A) T C =25 o C 6 4 4.5V 6 4 4.0V 2 2 V G =


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PDF AP09N70P-A-HF-3 AP09N70P-A-HF-3 O-220 O-220 AP09N70 09N70P diode t25 4 L5 09N70P DIODE T25 4 b1
2012 - diode t25 4 j5

Abstract: diode t25 4 c5 DIODE T25 4 do diode t25 4 L5 diode t25 4 j3 23/diode t25 4 j5 diode t25 4 c6 t25 4 j5 TM1-64 DIODE T25 4 c8
Text: L2 C11 L5 C9 J5 Notes: 1. 2. 3. 4 . 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. See PC , Figure vs. Frequency 10 8 NF (dB) NF (dB) Noise Figure vs. Bias Voltage 10 8 6 4 2 0 4.75 T=+25 ° C , . Pin Configuration Pin # 1 2, 4 , 5 3 6, 7 8 Backside Paddle Symbol Vbias N/C RF_in RF_Out Iref RF , . Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 [See note 4 ] WCDMA Channel Power , Notes: 4 . OIP3 is measured with two tones at an output power of 20 dBm/tone for 750 MHz, 22 dBm/tone for


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PDF AH225 AH225 diode t25 4 j5 diode t25 4 c5 DIODE T25 4 do diode t25 4 L5 diode t25 4 j3 23/diode t25 4 j5 diode t25 4 c6 t25 4 j5 TM1-64 DIODE T25 4 c8
2000 - RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

Abstract: MARCON NH capacitor inductor vk200 marcon capacitor nc Variable resistor 10K ohm neosid* 10k resistor 4.7k ohm RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
Text: 1000 Ciss Coss 100 Crss 10 T=-20 °C Vds=10 V T=+25 °C 15 T=+80 °C 10 5 0 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) 2 2.5 3 3.5 4 4.5 , Id= 4 A 0.9 Id=1 A Id=2 A Id=.1 A 0.85 Id=.25 A 0.8 -25 0 25 50 75 , =175Mhz 100 500 T=+25 °C 400 T=+80 °C 300 200 Vdd=50V Idq=2 x 250mA F=175Mhz 100 0 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 Pin, INPUT


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PDF SD2932 SD2932 TSD2932 RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz MARCON NH capacitor inductor vk200 marcon capacitor nc Variable resistor 10K ohm neosid* 10k resistor 4.7k ohm RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
2002 - diode Zener t25 4 c5

Abstract: diode gp 434 RG316-25 diode t25 4 L5 SD2932 diode t25 4 c5 RESISTOR 47 K OHM VK200 INDUCTOR DIODE T25 4 c8 700B
Text: 250 mA 4 V VDS(ON) VGS = 10 V ID = 10 A 3 V 125 V 1.5 GFS VDS = 10 , ) C, CAPACITANCE (pF) 10000 Ciss Coss 100 Crss 10 T=-20 °C Vds=10 V T=+25 °C , 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (V) VGS, GATE-SOURCE , =7 A 1.05 Id=11 A 1 0.95 Id= 4 A 0.9 Id=1 A Id=2 A Id=.1 A 0.85 Id=.25 A 0.8 , =2 x 250mA F=175Mhz 100 T=-20 °C 500 T=+25 °C 400 T=+80 °C 300 200 Vdd=50V Idq


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PDF SD2932 SD2932 diode Zener t25 4 c5 diode gp 434 RG316-25 diode t25 4 L5 diode t25 4 c5 RESISTOR 47 K OHM VK200 INDUCTOR DIODE T25 4 c8 700B
2000 - RG316-25

Abstract: 25 ohm semirigid diode t25 4 L5 850 ohm potentiometer RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz vk200.10 vk200 ferrite bead VK200 INDUCTOR 220 k ohm potentiometer diode gp 434
Text: (Q) VDS = 10 V ID = 250 mA 4 V VDS(ON) VGS = 10 V ID = 10 A 3 V IDS = , 100 Crss 10 T=-20 °C Vds=10 V T=+25 °C 15 T=+80 °C 10 5 0 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) 2 2.5 3 3.5 4 4.5 5 5.5 6 , Temperature 1.15 1.1 Id=5 A Id=9 A Id=10 A Id=7 A 1.05 Id=11 A 1 0.95 Id= 4 A 0.9 , Vdd=50 V 400 Vdd=40 V 300 200 Vdd=50V Idq=2 x 250mA F=175Mhz 100 T=-20 °C T=+25 °C


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PDF SD2932 SD2932 RG316-25 25 ohm semirigid diode t25 4 L5 850 ohm potentiometer RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz vk200.10 vk200 ferrite bead VK200 INDUCTOR 220 k ohm potentiometer diode gp 434
2002 - diode t25 4 L5

Abstract: variable resistor 4.7 k ohms 4 carbon wire resistor ceramic capacitor 4.7 mf 50v inductor vk200 diode L2.70 resistance 220 ohm DIODE T25 4 c8 470 OHM 50 W RESISTANCE multi gap inductor core
Text: Resistor 6.6 V Zener Diode 10 nH Inductor 40 nH Inductor 70 nH Inductor SD2932 M244 (.400 x .860 4 , VGS = 20 V VDS = 0 V 5 µA VGS(Q) VDS = 10 V ID = 250 mA 4 V VDS(ON) VGS , (pF) 10000 Ciss Coss 100 Crss 10 T=-20 °C Vds=10 V T=+25 °C 15 T=+80 °C , 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE , Id=11 A 1 0.95 Id= 4 A 0.9 Id=1 A Id=2 A Id=.1 A 0.85 Id=.25 A 0.8 -25 0


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PDF SD2932 SD2932 diode t25 4 L5 variable resistor 4.7 k ohms 4 carbon wire resistor ceramic capacitor 4.7 mf 50v inductor vk200 diode L2.70 resistance 220 ohm DIODE T25 4 c8 470 OHM 50 W RESISTANCE multi gap inductor core
2002 - NEOSId

Abstract: RG316-25
Text: POWER (W) Pout, OUTPUT POWER (W) T=-20 °C T=+25 °C 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 , VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 5 480 190 18 1.5 Min. 125 5 5 4 3 Typ , , CAPACITANCE (pF) Vds=10 V T=-20 °C T=+25 °C 15 1000 Ciss Coss 10 T=+80 °C 100 5 Crss 10 0 10 20 30 40 50 0 2 2.5 3 3.5 4 4.5 5 5.5 6 VDS, DRAIN-SOURCE VOLTAGE (V) VGS , 1.1 Id=10 A Id=9 A Id=5 A Id=7 A 1.05 Id=11 A 1 0.95 Id= 4 A 0.9 Id=2 A Id=.1 A Id=1 A


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PDF SD2932 SD2932 NEOSId RG316-25
2004 - RG316-25

Abstract: T20 88 DIODE diode Zener t25 4 c8 diode t25 4 L5 neosid MF variable CAPACITOR 50v Fair-Rite ATC semirigid diode t25 4 c6 700B
Text: = 20 V VDS = 0 V 250 nA VGS(Q) VDS = 10 V ID = 250 mA 4 V VDS(ON) VGS , Ciss Coss 100 Crss 10 T=-20 °C Vds=10 V T=+25 °C 15 T=+80 °C 10 5 0 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) 2 2.5 3 3.5 4 4.5 5 , . Case Temperature 1.15 1.1 Id=5 A Id=9 A Id=10 A Id=7 A 1.05 Id=11 A 1 0.95 Id= 4 , 500 T=+25 °C 400 T=+80 °C 300 200 Vdd=50V Idq=2 x 250mA F=175Mhz 100 0 0 0 2


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PDF SD2932 SD2932 RG316-25 T20 88 DIODE diode Zener t25 4 c8 diode t25 4 L5 neosid MF variable CAPACITOR 50v Fair-Rite ATC semirigid diode t25 4 c6 700B
2006 - diode T25 4 F8

Abstract: diode t25 4 L5 T25 4 F8
Text: !"# SRV05- 4 Features · · · · · ESD Protection for High-Speed Data Lines Low Capacitance Low , Rating 94V-0 300W Low Capacitance TVS Diode Array SOT-23-6L Absolute maximum Ratings Symbol PPK , to 2 Reverse Leakage Current @VRWM=5V, T=25 , Pin 5 to 2 Forward Voltage Drop @If=10mA Clamping , ground Pin Capacitance to ground, Pins1,3, 4 ,6,VR=0V, f=1MHz Pin Capacitance Pin 5 to 2,VR=0V, f=1MHz Min , 1.80 2.00 2.82 3.02 -0.10 1.05 1.15 0.30 0.60 0.10 0.20 NOTE CJ (Top View) Marking : L5


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PDF SRV05-4 OT-23-6L 8/20us) IEC6100-4-2 diode T25 4 F8 diode t25 4 L5 T25 4 F8
Not Available

Abstract: No abstract text available
Text: Voltage Single Pulse Avalanche Energy © Peak Diode Recovery dv/dt ® Junction and Storage Temperature , )* Junction-to-Ambient Min. — Typ — — * When mounted on 1" square PCB (FR- 4 or G-10 Material). For , Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) © Diode Forward Voltage , –¡ MOSFET symbol showing the / I , integral reverse G\ p s p-n junction diode . Tj=25°C, ls=14A, Vqs , °C 1440 , ■4 0 5 5 4 5 2 O D IS'ibO I S b ■IN R i^Ri_IRLR024


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PDF IRLR024 IRLU024 IRLR024) IRLU024) 46S5452 150KQ
2008 - DIODE T25 4

Abstract: DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
Text: equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02R is a design which includes ESD rated diode , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram I/O 1 5 4 1 2 3 I/O 1 1&6 I/O 2 6 5 VDD GND I/O 2 3&4


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PDF AZC299-02R 5/50ns) DIODE T25 4 DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
2009 - SD2932

Abstract: 200B 700B RG316 ST40 SD2932 reference T20 56 diode diode Zener t25 4 c5
Text: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 , . . 4 3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . , SD2932 Electrical characteristics TCASE = +25 oC 2.1 Static Table 4 . Static (per section


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PDF SD2932 SD2932 200B 700B RG316 ST40 SD2932 reference T20 56 diode diode Zener t25 4 c5
2010 - inductor vk200

Abstract: 10A ferrite bead 25 ohm semirigid vk200 ferrite bead ZENER MARKING C8 ST ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms VK200 FERRITE SURFACE MOUNT rf TRANSFORMER variable resistor 47
Text: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 , . . 4 3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . , SD2932 Electrical characteristics TCASE = +25 oC 2.1 Static Table 4 . Static (per section


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PDF SD2932 SD2932 inductor vk200 10A ferrite bead 25 ohm semirigid vk200 ferrite bead ZENER MARKING C8 ST ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms VK200 FERRITE SURFACE MOUNT rf TRANSFORMER variable resistor 47
2012 - ZENER MARKING C8 ST

Abstract: CAPACITOR 64 680 4J diode t25 4 L5 SD2932 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
Text: characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Static . . . , 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 4 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , oC 2.1 Static Table 4 . Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS VGS (1) Static (per , VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 480 190 18 5 200 1.5 Min 125 50 250 4 3


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PDF SD2932 SD2932 SD2932W ZENER MARKING C8 ST CAPACITOR 64 680 4J diode t25 4 L5 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
2012 - Not Available

Abstract: No abstract text available
Text: . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 , . . . . . 5 4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , SD2932 Electrical characteristics TCASE = +25 oC 2.1 Static Table 4 . Static (per section


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PDF SD2932 SD2932 SD2932W
2009 - ULTVSJJ5VCESGP

Abstract: diode t25 4 A8 DIODE T25 4 diode T25-4
Text: = 5V,Vpin7 = 0V,VIN = 2.5V,f = CIN_1 Capacitance-1 1MHz, T=25 oC, pin 1~ 4 to pin 7. Channel , ULTVSJJ5VCESGP is a design which includes surge rated diode arrays to protect high speed data interfaces , unique design of clamping cell which is an equivalent TVS diode in a single package. During transient , , Level 4 (15kV air, 8kV contact discharge). ULTVSJJ5VCESGP ESD Protect for Super Speed , voltage  Array of surge rated diodes with internal equivalent TVS diode  Solid-state


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PDF 100ns ULTVSJJ5VCESGP diode t25 4 A8 DIODE T25 4 diode T25-4
2002 - diode t25 4 L8

Abstract: diode t25 4 j6 diodes t25 4 l7 FR4 dielectric constant 4.6 diode t25 4 L5 diode t25 4 j8
Text: (Table 1) and the recommended values. P2 DIS4 DIS2 ALARM OUT1 ALARM OUT3 1 3 5 2 4 6 DIS3 DIS1 L5 ALARM , Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers · CWDM/WWDM 4 -Channel Parallel Links · , channel and modulating currents from 3mA to 50mA per channel. RF3764 may be used in 4 -fiber or 4 , Bias Current Control Range Ch 2 LD Ch 3 LD Ch 4 LD 2UGHULQJ ,QIRUPDWLRQ RF3764 Quad-Channel Edge Emitting Laser Driver (4x3.125Gbps) Failure Alarm FA 1 FA 2 FA 3 FA 4


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PDF RF3764 10Gigabit 125Gbps RF3764 330mW RO4003 diode t25 4 L8 diode t25 4 j6 diodes t25 4 l7 FR4 dielectric constant 4.6 diode t25 4 L5 diode t25 4 j8
2010 - ULTVSQB5VCESGP

Abstract: No abstract text available
Text: ¬ Array of surge rated diodes with internal equivalent TVS diode  Solid-state silicon-avalanche and , is a design which includes ESD rated diode arrays to protect high speed data interfaces. The , clamping cell which is an equivalent TVS diode in a single package. During transient conditions, the , operation. ULTVSQB5VCESGP may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (ï , 10 GND 8 NC 7 VDD I/O-6 9 2 I/O-5 6 I/O- 4 2 island NC 1 9


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PDF 800TYP. 031TYP. 600TYP 023TYP. 400TYP 015TYP. 200MIN. 008MIN ULTVSQB5VCESGP
2008 - Not Available

Abstract: No abstract text available
Text: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , rated diode arrays to protect high speed data interfaces. The AZ1045-02J has been specifically , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). , 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3 2


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PDF AZ1045-02J AZ1045-02J arrays300 150mm.
2002 - diode t25 4 j6

Abstract: t25 4 j6 Edge-Emitting Diode DFB laser bare die
Text: Digital 1 Digital 0 IBias + IMod IBias + (IMod/2) IBias Figure 4 . Transient Current of Laser Diode , Board (Table 1) and the recommended values. DIS4 DIS2 ALARM OUT1 ALARM OUT3 1 3 5 P2 2 4 6 DIS3 DIS1 L5 , ALARM OUT1 ALARM OUT3 1 3 5 P2 2 4 6 DIS3 DIS1 L5 ALARM OUT2 ALARM OUT4 P1 1 2 C2 10 nF C3 10 nF C1 10 , Transceivers · CWDM/WWDM 4 -Channel Parallel Links Product Description The RFW3764 is a quad-channel integrated , used in 4 -fiber or 4 -wavelength quad-channel fiber optic transceiver applications operating in excess


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PDF 10Gigabit RFW3764 125Gbps 330mW 125Gbps/channel. RFW3764 49mmx60mm RO4003 diode t25 4 j6 t25 4 j6 Edge-Emitting Diode DFB laser bare die
2008 - Not Available

Abstract: No abstract text available
Text: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , design which includes ESD rated diode arrays to protect high speed data interfaces. The AZ1045-02J has , cell which is an equivalent TVS diode in a single package. During transient conditions, the steering , -02J may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air,  , Circuit Diagram NC 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3


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PDF AZ1045-02J AZ1045-02J
2002 - Not Available

Abstract: No abstract text available
Text: 3 4 DIS1 ALARM OUT1 5 6 ALARM OUT2 Ferrite ALARM OUT4 R13 75 Ω L5 , Applications • Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers • CWDM/WWDM 4 , in 4 -fiber or 4 -wavelength quad-channel fiber optic transceiver applications operating in excess of , Quiescent Current Ch 1 LD Ch 2 LD Ch 3 LD Ch 4 LD • Common Anode Laser Driver â , Information RF3764 Failure Alarm FA 1 FA 2 FA 3 FA 4 Functional Block Diagram Rev


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PDF RF3764 125Gbps) 10Gigabit 125Gbps RF3764 330mW 49mmx60mm RO4003
2006 - diode t25 4 H9

Abstract: diode t25 4 B8 diode t25 4 G9 diode t25 4 k6 diode t25 4 H8 diode t25 4 F8 diode t25 4 e9 diode t25 4 e8 diode t25 4 L9 diode t25 4 g8
Text: J2 J1 J6 J5 K4 K3 K2 K1 K9 J8 K6 K5 K8 K7 L3 L2 L5 L4 K2 K1 K9 J8 K6 K5 K8 K7 L3 L2 L5 L4 L7 L6 L8 M6 M7 L7 L6 L8 M6 M7 M4 M5 M4 M5 N6 N7 , N19 N27 P27 P26 P25 P23 R23 R24 T32 T31 R25 R26 T30 T29 T28 T27 T25 N5 M2 N4 , R26 T28 U27 T21 T22 U26 U25 T19 T20 V27 V28 T23 T24 R19 V26 V25 T26 T25 W28 W27 , PLL6_OUT0n PLL6_OUT0p AD17 AA19 AG16 AB18 AH16 AD16 Y18 AF16 AE16 V18 W18 AA18 Page 4 of


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PDF EP1S25 PT-EP1S25-3 EP1S25. diode t25 4 H9 diode t25 4 B8 diode t25 4 G9 diode t25 4 k6 diode t25 4 H8 diode t25 4 F8 diode t25 4 e9 diode t25 4 e8 diode t25 4 L9 diode t25 4 g8
2008 - Not Available

Abstract: No abstract text available
Text: 4 (± 15kV air, ±8kV contact discharge). IEC 61000-4-2 (ESD) ±16kV (air/contact) IEC , clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves , Configuration Description I/O 2 Revision 2008/12/01 ©2008-2009 Amazing Micro. NC 6 5 4 1 AZ1115-02S is a high performance design which includes surge rated diode arrays to protect , which is an equivalent TVS diode in a single package. During transient conditions, the steering diodes


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PDF AZ1115-02S AZ1115-02S 5/50ns) silicon024 113XY
2007 - Not Available

Abstract: No abstract text available
Text: Clamping Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping , Rdynamic_VDD CIN CCROSS △CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 μA VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 , Pin 4 IPP=5A, tp=8/20μs, T=25 oC Any Channel pin to Ground IEC 61000-4-2 +6kV, T=25 oC, Contact , AZC015-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, Â


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PDF AZC015-02N AZC015-02N 5/50ns) C03XY.
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