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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode t25 4 L0 Datasheets Context Search

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DIODE T25 4 H5

Abstract: diode t25 4 L0 T25 4 h5 DIODE T25 4 DIODE T25 DIODE T25 4 C diode t25 4 A0 sk 3003 s THYRISTOR tv 930 SEMITOP weight
Text: 1200 SK 70 DH 12 1700 16C0 SK 70 DH 16 Symbol Conditions Values Units 'o T^-80 -C 63 A 'f SM 9 T^-25 "C; 10 ms 370 A T^ - 125 *C;10ms 280 A Pt T^-25 -C; 8.3 . 10 ms 686 A*$ T^- 125 -C; 8,3.10 ms 366 A*» VT T^-25 -C; 76A max 1,9 V VT(TO) V126 "ft 1 V t T^-126 -C 10 mil 'o:- 'rd V126'c:voo-WvR:>-vRay max. 10 mA V T^ - 25 -C; l0 - 1 A; di^'dt - 1 Afps 1 H5 V Vd-0.67VO3w 2 H5 (dv.'dtjç, T , T^-25 -C; d.c. min. 2 V •or T^-25 -C; d.c. min. 100 mA voo T^ - 125 -C; d.c max. 0,26 V 'OD T


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BUK655-500A

Abstract: BUK655-500B BUK655-500C T0220AB dlp afe 1000
Text: N AMER PHILIPS/DISCRETE 2SE J> bbS3131 a020t.'i5 7 PowerMOS transistor Fast Recovery Diode , reversé diode , particularly suitable for motor control applications, eg. in full bridge configurations , on-state 1.3 1.5 1.7 a . resistance t„ Diode reverse recovery time 250 250 250 ns Dimensions in mm Net Mass: 2g Pinning: 1 = Gate 2 = Drain 3 = Source 4 ,5 max 1.3 0,9 max (3x) 2,54 2,54 5,9. min 15,8 max 0,6 2, 4 3- Fig. 1 T0220AB; drain connected to mounting base. Notes 1


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PDF bbS3131 a020t. BUK655-500A BUK655-500B BUK655-500C T-37-/3 BUK655 -500A -500B -500C BUK655-500C T0220AB dlp afe 1000
Not Available

Abstract: No abstract text available
Text: T25 IRF9540N Peak Diode Recovery dv/dt Test Circuit D.U.T* Circuit Layout Considerations â , 0 . 1 1 7 Q l0 = - 1 9 A Description Fifth Generation HEXFETs from International Rectifier , Diode Recovery dv/dt G > Operating Junction and Storage Temperature Range Soldering Temperature, for , -10V, Id = -11A ® 0.117 a — -4.0 v -2.0 Vds = Vgs. Id = -250pA Vqs = -50V, l0 = -11A 5.3 , - 20V nA -100 -VG = -20V S l0 =-11A 97 -S 15 nC VD = -80V -51 Vqs = -10V, See Fig


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PDF IRF9540N
diode t25 4 L0

Abstract: BUK655-500A BUK655-500B BUK655-500C T0220AB BUK655-500 1c7s
Text: 10 100 1000 VDS/V Fig. 4 . Safe operating area. T^ = 25 'C l0 & Iqm = f(Vos); Iqm single pulse , \ \ / \ / \ ( \ 4 e IO/A 10 Fig.9. Typical transconductance, T-25 'C. 9fs = f(lo); conditions: Vos = 25 V RDS(ON , N AMER PHILIPS/DISCRETE 2SE » bbS3131 Q020t.'i5 7 PowerMOS transistor Fast Recovery Diode FET , mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reversé diode , resistance t„ Diode reverse recovery time 250 250 250 ns Dimensions in mm Net Mass: 2g Pinning: 1 =


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PDF bbS3131 Q020t. BUK655-500A BUK655-500B BUK655-500C BUK655 -500A -500B -500C diode t25 4 L0 T0220AB BUK655-500 1c7s
STH7NA80FI

Abstract: STH7NA80
Text: T25 °c V0S = 15V OS(on) (0) 0 12 3 4 lp(a) Gate , uos _ DIODE 4 - FAST G M-! X ▲ DIODE ; L=100^H ►8 1-»8 98 o 0 kl o.u.r. asn i 3.3 1000 , TRANSISTOR TYPE Vdss RoS(on) Id STH7NA80 STH7NA80FI 800 V 800 V < 1.9 n < 1.9 n 6.5 A 4 A . TYPICAL RDS(op , 20 kft) 800 V Vgs Gate-source Voltage ± 30 V Id Drain Current (continuous) at T0 = 25 °C 6.5 4 A Id Drain Current (continuous) at Tc = 100 °C 4 2.5 A Idm(») Drain Current (pulsed) 26 26 A


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PDF STH7NA80 STH7NA80FI STH7NA80 STH7NA80FI SWITCHI00 gcs99so 00b2GG6 STH7NA80/FI SC05970 DOtEDD11]
DIODE T25 4 Jo

Abstract: cd photo diode
Text: No. 1 2 3 4 5 6 7 8 Function TE cooler, negative T herm istor lead 1 T herm istor lead 2 Laser diode , SONY SLD322XT Package O utline Unit : mm High Pow er Density 0.5 W Laser Diode D escription The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d "1 . C om pared lo the SLD 300 Series, Ihis laser diode has a high brightness output with a doubted optical density which can be achieved by Q W -S C H stru ctu re "'. Tem perature of laser diode is controlled by


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PDF SLD322XT DIODE T25 4 Jo cd photo diode
Not Available

Abstract: No abstract text available
Text: speed 8MHz Latched data outputs CMOS compatible inputs Forward and reverse shifting options Diode to VP , package. 4 . For operation above 25°C ambient, derate linearly to 70°C at 12mW/°C. 1. -0.5V to +16V , Current Leakage, any input l,L Current Leakage, any input HV Output Clamp Diode Voltage HV Output when , GND V dd = V dd max, fCLK = 8 MHz l0 = 100|iA l0 = 100|iA V|N = VD D V,N = 0 l0L = -100mA l0H = -20mA , ground. 2. Apply VDD. 3. Set all inputs (Data, CLK, Enable, etc.) to a known state. 4 . Apply VPP


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PDF 32-Channel HV5308DJ HV5408DJ HV5308PJ HV5408PJ HV5308PG HV5408PG HV5308X HV5408X MIL-STD-883
Not Available

Abstract: No abstract text available
Text: Forward and reverse shifting options □ Diode to VP allows efficient power recovery P These , total power dissipated in the package. 4 . For operation above 25°C ambient, derate linearly to 70 , Register Output Voltage 1 l|H l|L V l0 = 100|jA V l0 = 100|oA Current Leakage, any , o HV Output Clamp Diode Voltage X I o o o > > > HV Output when Sourcing < o r â , . Apply VDD. 3. Set all inputs (Data, CLK, Enable, etc.) to a known state. 4 . Apply VPP. Power-down


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PDF 32-Channel HV5308DJ HV5308PJ HV5408DJ HV5408PJ MIL-STD-883 HV5308PG HV5308X RBHV5308DJ HV5408PG
diode t25 4 d7

Abstract: No abstract text available
Text: diode clamps to Vcc and ground. )6365 7 " ~ D j . ¿à?/- * / · Can perform as: Boolean , High-Drive-Current outputs: ( I o l = 2 4 mA ® V o l =0.5V) for direct bus interface · Inputs and outputs interface directly with TTL, NMOS and CMOS devices · Wide Qperating voltage range: 4 .SV to 5.5V · Characterized for operation over industrial and military temperature ranges: . KS74HCTLS: - 4 0 ° C to + 85°C KS54HCTLS: - 5 5 , D5 D6 D7 W H DO D1 D2 D3 D4 D5 06 D7 PIN CONFIGURATION 03 C D2C 1 2 3 4 5 6 7 ; 16 15 14 13 12 11


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PDF KS54HCTLS KS74HCTLS 7Tb414S 90-XO 14-Pin diode t25 4 d7
Not Available

Abstract: No abstract text available
Text: Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin l0 K lo Icc , M54HC155 M74HC155 SGS-THOMSON m DUAL 2 TO 4 LINE DECODER 3 TO 8 LINE DECODER HIGHSPEED tpD = 12 ns (TYP.) AT Vcc = 5 V LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT TA = 25 °C HIGH NOISE , IMPEDANCE | Ioh | = Iol = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tP L H = tP H L WIDE OPERATING , dual 1-TO- 4 line demultiplexers with indi­ vidual strobe inputs (1G and 2G), individual data inÂ


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PDF M54HC155 M74HC155 54/74LS155 M54HC155F1 M74HC155M1 M74HC155B1R M74HC155C1R M54/74HC155 M54/M74HC155
Not Available

Abstract: No abstract text available
Text: m itte rC a th o d e 90 85 M ax 4 5 0 M a x. 5 0 0 04 0 M a x. V -T 1 -I- i 8 2 7.7 E , y Ì A T D e te c to r a 4 * LD ¿ í y .1. i J. T ¿ [ Í2) [D FEATURES · , m c a s e b o tto m ), (T c ) ^ * = 1 0 s 4 0 " to + 6 0 " C 40 to + 75 'C 2 6 0 "C /m in Laser Diode D ire c t F o rw a rd C u rre n t (IF u a x , Monitoring Diode R e v e rs e V o lta g e (V R UAX) 20 V PIN Diode R e v e rs e V o lta g e (V H MAX


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PDF 1550nm
Marking Code m sc70-6

Abstract: jedec SC-70-6 package SC70-6 SPI SC70-6 Marking Code m sc70-6 25 fdg6301n bb sc70-6 Marking Code m sc70-6 .25 bs sc70 F63TNR
Text: Components Leader Tape 500mm minimum or 125 empty pockets July 1999, Rev. C m 3HbIìti7l4 Q0fc»2öö 4 T25 , continuous, 0.65 A peak. Rdsiom, = 4 ß @ VGS= 4.5 V, RDS(ON) = 5 Î2 ( ! V„s= 2.7 V. Very low level , . m SC70-6 m S.p."i>OI " I! SO-8 SOT-223 SC70-6 The pinouts are symmetrical; pin 1 and 4 are , VGS = 0V, lD= 250 pA 25 V ABV^ATj Breakdown Voltage Temp. Coefficient l0 = 250 pA, Referenced to , 4.5V, Id = 0.22 A 2.6 4 £2 Tj =125°C 5.3 7 VGS = 2.7V, Id = 0.19A 3.7 5 '□(ON


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PDF FDG6301N 34bTb SC70-6 331-ryp SC-70, Marking Code m sc70-6 jedec SC-70-6 package SC70-6 SPI SC70-6 Marking Code m sc70-6 25 fdg6301n bb sc70-6 Marking Code m sc70-6 .25 bs sc70 F63TNR
4p1c

Abstract: samsung nand derating
Text: SAMSUNG SEMICONDUCTOR INC DE D e ( 7 ^ 4 1 4 2 DDDbEBS 5 | - T ~ < / < Z 'J 7 FEATURES · , High-Drive-Current outputs: ( I o l -2 4 mA @ Vol =0.SV) for direct bus Interface · Inputs and outputs interface , operation over industrial and military temperature ranges: KS74AHCT: - 4 0 °C to +85°C KS54AHCT: -5 5 °C to , outputs are protected from damage due to static discharge by internal diode clamps to Vcc and ground , 19 P=Q 18 j Q 7 17 J P 7 16 3 0 6 15 3 P 6 14 I]Q 5 13 > 5 12 1 TM 11 ] P 4 OUTPUTS G2 X L X X H


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PDF 54f74ALS KS74AHCT: KS54AHCT: 300-mil 7Tb414S 90-XO 14-Pin 4p1c samsung nand derating
Not Available

Abstract: No abstract text available
Text: Input Diode Current (l,K) V, < -0.5V Source Current (JEDEC Method 17) -20 mA V, > Vcc + 0.5V , -0.5V to Vcc +0.5V DC Output Diode Current (lOK) VQ < -0.5V -2 0 mA V0 Vcc + 0.5V +20 mA , Output Source or Sink Current ( l0 ) ±500 mA 0V -V cc Output Voltage (VD) 0V -V Cc Operating Temperature (TA) ±12.5 mA - 4 0 ‘C to +85‘C Input Rise and Fall Time (tr/tf) DC , High Level Input Voltage 4 .5 -5 .5 V,L Low Level Input Voltage High Level Output Voltage


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PDF NC7ST86 NC7ST86 MM74HCT
74LS75

Abstract: No abstract text available
Text: 74 54 74 5 4 ,7 4 54 74 I MIN 4.5 4.75 -5 5 0 TYP 5.0 5.0 25 25 MAX 5.5 6.25 T25 70 - 0 , Q output until the Enable is perm itted to go HIGH. The S N 54 L S /7 4 L S 75 features com plem entary Q and Q output from a 4 -b it latch and in a v a ila b le in th e 16 -pin packages. For higher com ponent density applications the S N 54LS /74LS 77 4 -b it latch is available in the 14 -pin package w ith Q outputs omitted. 4 -BIT D LATCH LOW POWER SCHOTTKY LO A D IN G (Note a) PIN N A M E S O1 - D


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PDF SN54LS/74LS75 SN54LS/74LS77 /74LS /74LS77 latch20 74LS75
2008 - DIODE T25 4

Abstract: DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
Text: equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02R is a design which includes ESD rated diode , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram I/O 1 5 4 1 2 3 I/O 1 1&6 I/O 2 6 5 VDD GND I/O 2 3&4


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PDF AZC299-02R 5/50ns) DIODE T25 4 DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
2009 - ULTVSJJ5VCESGP

Abstract: diode t25 4 A8 DIODE T25 4 diode T25-4
Text: = 5V,Vpin7 = 0V,VIN = 2.5V,f = CIN_1 Capacitance-1 1MHz, T=25 oC, pin 1~ 4 to pin 7. Channel , ULTVSJJ5VCESGP is a design which includes surge rated diode arrays to protect high speed data interfaces , unique design of clamping cell which is an equivalent TVS diode in a single package. During transient , , Level 4 (15kV air, 8kV contact discharge). ULTVSJJ5VCESGP ESD Protect for Super Speed , voltage  Array of surge rated diodes with internal equivalent TVS diode  Solid-state


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PDF 100ns ULTVSJJ5VCESGP diode t25 4 A8 DIODE T25 4 diode T25-4
Not Available

Abstract: No abstract text available
Text: Leadforms • Also Available in Surface Mount D2PAK Package Pin 1. 2. 3. 4 . 5. Voltage Feedback , Hz) Output Voltage Swing V High State (Isource = 75 VFB = 4 5 v ) Low State (Isink = 0-4 mA , TA, AMBIENT TEMPERATURE (°C) 100 125 Figure 4 . Error Amp Output Saturation versus Sink , Pin 4 = Vcc Pin. 2,5 Open — Ta +25°C I 0 TA, AMBIENT TEMPERATURE (°C) b3Li72 , SUPPLY VOLTAGE (V) 40 T25 ■MOTOROLA ANALOG 1C DEVICE DATA MC34166 MC33166 Figure 13


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PDF C34166 C33166 MC34166, MC33166 I7225
2010 - ULTVSQB5VCESGP

Abstract: No abstract text available
Text: ¬ Array of surge rated diodes with internal equivalent TVS diode  Solid-state silicon-avalanche and , is a design which includes ESD rated diode arrays to protect high speed data interfaces. The , clamping cell which is an equivalent TVS diode in a single package. During transient conditions, the , operation. ULTVSQB5VCESGP may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (ï , 10 GND 8 NC 7 VDD I/O-6 9 2 I/O-5 6 I/O- 4 2 island NC 1 9


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PDF 800TYP. 031TYP. 600TYP 023TYP. 400TYP 015TYP. 200MIN. 008MIN ULTVSQB5VCESGP
2008 - Not Available

Abstract: No abstract text available
Text: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , rated diode arrays to protect high speed data interfaces. The AZ1045-02J has been specifically , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). , 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3 2


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PDF AZ1045-02J AZ1045-02J arrays300 150mm.
2008 - Not Available

Abstract: No abstract text available
Text: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , design which includes ESD rated diode arrays to protect high speed data interfaces. The AZ1045-02J has , cell which is an equivalent TVS diode in a single package. During transient conditions, the steering , -02J may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air,  , Circuit Diagram NC 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3


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PDF AZ1045-02J AZ1045-02J
2008 - Not Available

Abstract: No abstract text available
Text: 4 (± 15kV air, ±8kV contact discharge). IEC 61000-4-2 (ESD) ±16kV (air/contact) IEC , clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves , Configuration Description I/O 2 Revision 2008/12/01 ©2008-2009 Amazing Micro. NC 6 5 4 1 AZ1115-02S is a high performance design which includes surge rated diode arrays to protect , which is an equivalent TVS diode in a single package. During transient conditions, the steering diodes


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PDF AZ1115-02S AZ1115-02S 5/50ns) silicon024 113XY
2007 - Not Available

Abstract: No abstract text available
Text: Clamping Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping , Rdynamic_VDD CIN CCROSS △CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 μA VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 , Pin 4 IPP=5A, tp=8/20μs, T=25 oC Any Channel pin to Ground IEC 61000-4-2 +6kV, T=25 oC, Contact , AZC015-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, Â


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PDF AZC015-02N AZC015-02N 5/50ns) C03XY.
2008 - c09x

Abstract: AZC015-02N SOT143-4L DIODE T25 4
Text: Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping Voltage , CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 A VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 to Pin 1 1 A 9 V 0.8 1 V 8.1 9 V 6 IF = 15mA, T=25 oC Pin 1 to Pin 4 IPP=5A, tp=8/20s, T=25 , used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact


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PDF AZC015-02N AZC015-02N 5/50ns) 8/20s) techno09 C03XY. c09x SOT143-4L DIODE T25 4
2008 - Not Available

Abstract: No abstract text available
Text: equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02S is a design which includes ESD rated diode , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram I/O 1 5 4 1 2 3 I/O 1 1&6 I/O 2 6 5 VDD GND I/O 2 3&4


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PDF AZC299-02S 5/50ns) C29XY
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