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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
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LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
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diode smd 51C Datasheets Context Search

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2007 - diode smd 51C

Abstract: No abstract text available
Text: version. Descriptions IR26- 51C /L110/TR8 is an infrared emitting diode in miniature SMD package which , Technical Data Sheet 1.6mm round Subminiature Side Looking Infrared LED IR26- 51C /L110/TR8 , Page: 1 of 10 Prepared byPosen Hsu IR26- 51C /L110/TR8 Package Dimensions Notes: 1 , : 2 of 10 Prepared byPosen Hsu IR26- 51C /L110/TR8 Electro-Optical Characteristics (Ta , byPosen Hsu IR26- 51C /L110/TR8 Typical Electro-Optical Characteristics Curves Fig.1 Forward


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PDF IR26-51C/L110/TR8 IR26-51C/L110/TR8 NoDTR-026-270 date03-06-2006 diode smd 51C
2014 - Not Available

Abstract: No abstract text available
Text: ,Cl <900 ppm , Br+Cl < 1500 ppm) Description ․IR26- 51C /L110/TR8 is an infrared emitting diode in miniature SMD package which is molded in a water clear plastic with spherical top view lens. The device is , Technical Data Sheet 1.6mm round Subminiature Side Looking Infrared LED IR26- 51C /L110/TR8 , ․Smoke detector Device Selection Guide Device No. Chip Material Lens Color IR26- 51C /L110/TR8 , .3 www.everlight.com Expired Period: Forever DATASHEET IR26- 51C /L110/TR8 Package Dimensions R e c o m m e n


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PDF IR26-51C/L110/TR8 IR26-51C/L110/TR8 DIR-0000251
Not Available

Abstract: No abstract text available
Text: version. Descriptions IR26- 51C /L110/TR8 is an infrared emitting diode in miniature SMD package which , Technical Data Sheet 1.6mm round Subminiature Side Looking Infrared LED IR26- 51C /L110/TR8 , Rev 1 Prepared by Page: 1 of 10 Posen Hsu IR26- 51C /L110/TR8 Package Dimensions Notes: 1 , by Page: 2 of 10 Posen Hsu IR26- 51C /L110/TR8 ) Electro-Optical Characteristics (Ta , Prepared by Units mW /sr A deg Page: 3 of 10 Posen Hsu IR26- 51C /L110/TR8 Typical


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PDF IR26-51C/L110/TR8 IR26-51C/L110/TR8 DTR-026-270
Not Available

Abstract: No abstract text available
Text: ,Cl <900 ppm , Br+Cl < 1500 ppm) Description ․IR26- 51C /L110/TR8 is an infrared emitting diode in miniature SMD package which is molded in a water clear plastic with spherical top view lens. The device is , Technical Data Sheet 1.6mm round Subminiature Side Looking Infrared LED IR26- 51C /L110/TR8 , ․Smoke detector Device Selection Guide Device No. Chip Material Lens Color IR26- 51C /L110/TR8 , .4 www.everlight.com Expired Period: Forever DATASHEET IR26- 51C /L110/TR8 Package Dimensions R e c o m m e n


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PDF IR26-51C/L110/TR8 IR26-51C/L110/TR8 DIR-0000251
2013 - Not Available

Abstract: No abstract text available
Text: product itself will remain within RoHS compliant version. Description  IR26- 51C /L110/TR8 is an infrared emitting diode in miniature SMD package which is molded in a water clear plastic with spherical , IR26- 51C /L110/TR8 Features ․Small double-end package ․Low forward voltage ․Good , Lens Color IR26- 51C /L110/TR8 GaAlAs Water Clear 1 Revision Copyright © :2 , 09:35:38.0 No: DIR-0000251 www.everlight.com Expired Period: Forever DATASHEET IR26- 51C /L110


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PDF IR26-51C/L110/TR8 IR26-51C/L110/TR8 IR26-ng DIR-0000251
ir3870

Abstract: cap 150uf 35v SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A Cap X7R 1210 T4 GRM1885C1H470JA01D MCR10EZPJ000 murata x7r capacitor 0603 IR3870 voltage regulator MBR0530T1G SMD r105
Text: -4YB1E106M Panasonic C89 1 150uF CAP,150UF,35V,ELECT,FK, SMD EEEFK1V101XP Panasonic C90 1 , MBR0530 DIODE ,SCHOTTKY,30V,0.5A,SOD123 MBR0530T1G On Semiconductor D9 1 BAT54S DIODE , Inductor MSQ1006-R56N-R ACT R92,R97 2 10K RES,10.0K,OHM,1/10W,1%,0603, SMD MCR03EZPFX1002 Rohm Semiconductor R93,R98,R100,R102 4 0 RES,0.0,OHM,1/8W,5%,0805, SMD MCR10EZPJ000 Rohm Semiconductor R94 1 2 RES,2.00,OHM,1/10W,1%,0603, SMD RC0603FR-072RL AVX


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PDF IRDC3870 IRDC3870 IR3870 cap 150uf 35v SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A Cap X7R 1210 T4 GRM1885C1H470JA01D MCR10EZPJ000 murata x7r capacitor 0603 IR3870 voltage regulator MBR0530T1G SMD r105
20 mf 25 metal rectifier diode

Abstract: 2N6277 equivalent 1N5817 2N2222 2N6277 MBR1020 MBR1035 MBR1045 2N22220
Text: through the diode capacitance, which lowers the dc output voltage. 51C 57 541 ~ VÍ~~-03-/Í FIGURE 10 â , MOTOROLA SC (DIODES/OPTO) M BR 1020 • MBR1035 • MBR1045 51C 57539 I SI DE I L3ti7E55 □□S753ci 1 , majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients , performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure


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PDF 005753fl MBR1020 MBR1035 MBR1045 221B-01 O-220AC MBR1045 2N6277 20 mf 25 metal rectifier diode 2N6277 equivalent 1N5817 2N2222 2N6277 2N22220
2006 - Not Available

Abstract: No abstract text available
Text: SEMiX 452GB176HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib , ( Units " " " > SEMiX® 2 Trench IGBT Modules SEMiX 452GB176HD Inverse Diode 1? 1?56 1? 6 )+ , 4( , . )+ , 3( )'( 8( )( 8( A 2( @@@ B '+( C% 5"1C *< "- ' @ A 2( @@@ B ')+ 2( " " " , Conditions Inverse Diode ? ?( ? 1? 3( "; 9 ( . )+ , . ')+ , . )+ , . ')+ , . )+ , . ')+ , 1556 , electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module


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PDF 452GB176HD
2006 - 51c semiconductor

Abstract: No abstract text available
Text: Trench IGBT Modules SEMiX 452GB176HD Inverse Diode 1? 1?56 1? 6 )+ , 4( , 3( )'( 8( )( 8( A 2( @@@ B '+( C% 5"1C *< "- ' @ A 2( @@@ B ')+ 2( " " " " " , , Module 156 Preliminary , Characteristics Symbol Conditions Inverse Diode ? ?( ? 1? 3( "; 9 ( . )+ , . ')+ , . )+ , . ')+ , . , RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge


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PDF 452GB176HD 51c semiconductor
2004 - diode 6v8a

Abstract: diode 33CA 012 6V8A diode 6V8C 6V8C 6v8ca 737 39A diode 39CA 6v8a 15CA
Text: Avalanche Diodes 600W Surface Mount Transient Voltage Suppressors P6SMBJ Series ® SILICON DIODE , 47 / P6SMBJ 47C P6SMBJ 47A / P6SMBJ 47CA P6SMBJ 51 / P6SMBJ 51C P6SMBJ 51A / P6SMBJ 51CA P6SMBJ , 49.40 1.0 5.0 64.8 9.3 3.5 51 / 51C 41.30 45.90 56.10 1.0 5.0 73.5 , e l f u s e . c o m 275 SILICON DIODE ARRAYS 6 ELECTRICAL SPECIFICATION @ Tamb 25


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PDF 200CA 220CA diode 6v8a diode 33CA 012 6V8A diode 6V8C 6V8C 6v8ca 737 39A diode 39CA 6v8a 15CA
2004 - diode 6v8a

Abstract: 39ca diode 6V8C diode 33CA 6v8ca 8v2a marking 12CA on 6v8a P6SMBJ 62ca
Text: DIODE ARRAYS 1000 Picofarads 100 @ Stand-off Voltage 10 1 100 1000 10 Device Stand-off Voltage , DIODE ARRAYS P6SMBJ 36 / P6SMBJ 36C P6SMBJ 36A / P6SMBJ 36CA P6SMBJ 39 / P6SMBJ 39C P6SMBJ 39A , 47CA P6SMBJ 51 / P6SMBJ 51C P6SMBJ 51A / P6SMBJ 51CA P6SMBJ 56 / P6SMBJ 56C P6SMBJ 56A / P6SMBJ 56CA , / 36CA 39 / 39C 39A / 39CA 43 / 43C 43A / 43CA 47 / 47C 47A / 47CA 51 / 51C 51A / 51CA 56 / 56C 56A


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PDF 160CA 170CA 180CA 200CA 220CA 220CA diode 6v8a 39ca diode 6V8C diode 33CA 6v8ca 8v2a marking 12CA on 6v8a P6SMBJ 62ca
Not Available

Abstract: No abstract text available
Text: Collector reverse current DC (forward diode current) 100 A PC Collector dissipation Tc , (forward diode current) Peak value of one cycle of 60H z (half wave) 1000 A T\ Junction tem , €” — 2.5 V — VCEO Collector-em itter reverse voltage — Ic=100A ( diode forward , €” 12 — — 3.0 Transistor part (per 1/2 module) — — 0.2 °C /W Diode , ? o 5=1C 0 w g LU LU ( II 1 \ i 1 is H O z T i \ i


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PDF E80276 E80271 QM100CY-H
MAX16834

Abstract: APP4669 75VLED
Text: of lower MOSFET and inductor currents. However, since current flows through the output diode (D2) when the MOSFET (Q1) turns on, the reverse recovery losses in the output diode result in higher , MOSFET turns off, the drain voltage rises to the output voltage plus a Schottky diode drop. MOSFET , °C T L1: 39°C 23°C D1 : 51°C 35°C Q1: 51°C 35°C Q3: 57°C 41°C IC


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PDF MAX16834, MAX16834 MAX16834 com/an4669 AN4669, APP4669, Appnote4669, APP4669 75VLED
2012 - in4148 smd diode

Abstract: diode smd 51C lg lcd monitor circuit diagram free lcd tv LG power supply diagram AP Circuit
Text: 0.3V to +6V 4.5A 1.96W -40°C To 150°C 13°C/W 51°C /W Boost Voltage , stress on input power, MOSFET, and freewheeling diode . The soft start time can be programmed by , Diode It is strongly recommended that an external bootstrap diode be added when there is a 5V fixed , APE1596A regulator. The boost diode can be the one with lost cost such as IN4148 or BAT54. 5V VIN BS APE1596A SW 10nF This diode is also recommended for high duty cycle operation when Duty Cycle>65


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PDF 330kHz APE1596A APE1596A 400mS/Div) 100mA 200mV/Div 10mV/Div) 200mA/Div) 20mV/Div) in4148 smd diode diode smd 51C lg lcd monitor circuit diagram free lcd tv LG power supply diagram AP Circuit
2003 - ELESTA stm 100

Abstract: elesta zkr 118 ELESTA SKR 122 ZVE11 socket ZKR008 ZVE11
Text: free wheel diode 6 RC-circuit 110 varistor 6varistor 6LED 24 LED 110 - 220 VDC 230 VAC 24 VAC 230 VAC 60 VDC/ VAC 230 VDC/ VAC ZKE088/118 E 21 E 51C E 71 E 81 E 61EV E 91V catalog


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PDF 11-pole 700mW 100ms 140ms 150ms 10Veff 100mA ELESTA stm 100 elesta zkr 118 ELESTA SKR 122 ZVE11 socket ZKR008 ZVE11
2012 - smd diode marking code ug

Abstract: in4148 package smd diode 744 771 20
Text: ) Thermal Resistance from Junction to Ambient(RthJA) - 0.3V to +6V 4.5A 1.96W -40°C To 150°C 13°C/W 51°C , stress on input power, MOSFET, and freewheeling diode . The soft start time can be programmed by , Diode It is strongly recommended that an external bootstrap diode be added when there is a 5V fixed , APE1596A regulator. The boost diode can be the one with lost cost such as IN4148 or BAT54. 5V VIN BS APE1596A SW 10nF This diode is also recommended for high duty cycle operation when Duty Cycle>65


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PDF 330kHz APE1596A APE1596A 400mS/Div) 100mA 200mV/Div 10mV/Div) 200mA/Div) 20mV/Div) smd diode marking code ug in4148 package smd diode 744 771 20
Not Available

Abstract: No abstract text available
Text: ARRAY W IT H C L A M P DIODE DESCRIPTION The M 54594P 4-channel sink diver, consists of 8 NPN tran , series input resistors. Each output has a diode for inductive load transient suppression and the , . 5— H O input voltage V Pulse width^10ms. Percent duty c ycle ^5% lp(D) Clamp diode , Operating temperature T s tg Pulse width^100ms, Percent duty c ycle ^5% Clamp diode reverse voltage , 1.5A DA RLIN G TO N TR A N S IS T O R ARRAY W IT H C L A M P DIODE RECOMMENDED OPERATIONAL


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PDF M54594P 54594P
1999 - Not Available

Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 371 S , current Dauergrenzstrom mean forward current tC = 85°C, f = 50Hz tC = 51°C , f = 50Hz IFAVM 330 , Fast Diode D 371 S 45 T S Thermische Eigenschaften / Thermal properties Innerer , /page 2 Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D , / Technical Information Schnelle Gleichrichterdiode Fast Diode HLB-M / 25.4.1996 Beuermann / Keller D


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DIODE MOTOROLA 33A

Abstract: No abstract text available
Text: MOTOROLA SC OIODES/OPTOJ SÏ ÏF lt3 t.7 2 S S DDSSItS B I f - OT - I $ M OTOROLA SEMICONDUCTORS P.O. BOX 20912 · PHOENIX, ARIZONA 85036 MMBV3700 MMBV3700L SILICON PIN SWITCHING DIODE HIGH VOLTAGE SILICON PIN DIODE " ·"1 ' r - M M BV3700 . . . designed primarily , ) Characteristic Reverse Breakdown Voltage (Ir = 10 mA) Diode Capacitance (Note 1) (Vr = 20 Vdc, f = 1.0 MHz , INC., 1983 DS2700 6 3 6 7 2 5 5 MOTOROLA SC 51C


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PDF MMBV3700 MMBV3700L BV3700 OT-23 DIODE MOTOROLA 33A
5 kw car inverter circuit pcb

Abstract: BE 4CA diode IGBT gate DRIVE TREE LEVEL power inverter detailed schematic diagram brake rectifier motor press fit rectifier diode igbt based high frequency inverter Power INVERTER schematic circuit irpt2051 IRPT2051E
Text: , ultra fast IGST inverter - HEXFRED ultrafnst soft recovery-freewheeling diodes - Brake IGBT and diode , * procfttiftfl Revised 5/97 Figur» 2. Ihe RPT2Ü 51C MMrfRTRAM w'lhin o motor con Ira: 5 y stem I : ;i 1 , Rectifier PCWÌRtRAIN and Design Kit The 1KF1-Ü 51C POwHtTXAfN (Fi aure 3) provides the complete power , reciifiors. 12C0V brake IGBT and tree wheeling diode . 1200V :fhc>i1-,:irLmil V.] .]ri:i!;:-1 ÏGBT inverter


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PDF IRPT2051A 3B0-48GV IRPT2051C 965y0 5 kw car inverter circuit pcb BE 4CA diode IGBT gate DRIVE TREE LEVEL power inverter detailed schematic diagram brake rectifier motor press fit rectifier diode igbt based high frequency inverter Power INVERTER schematic circuit irpt2051 IRPT2051E
Not Available

Abstract: No abstract text available
Text: Conditions aax. Vge= 0 V Units = s a y :5* «j <*- u. j~ o I I S 5-·£1c ^ " = > » £ 5 "D .S _ , haracteristics of reverse diode ( at Tj=25'C unless otherwise specified ) Characteristics 1teas Symbols sin. Diode forward V F on-voltage Reverse recovery t r r tla e 300 2.3 3.0 V oe = 0V Conditions typ. ax , 38 Diode the base to cooling fin for the m a n u fa c tu rin g c o n s e n t of Fuji E le


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PDF 0D0244S F4907 223fl7c
2005 - diode 6V8C

Abstract: diode 6v8a P6SMBJ
Text: 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C 82C 91C 100C 110C 120C 130C 150C 160C 170C 180C 200C 220C 250C , 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 6 SILICON DIODE ARRAYS 267 For bidirectional , e l f u s e . c o m 269 SILICON DIODE ARRAYS Littelfuse


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PDF
2005 - 051 6V8A

Abstract: diode 6v8a 6V8C smb 440a 16.7 do-214aa 012 6V8A diode 68A DEVICE MARKING CODE 150A device code 150a diode marking 33A on
Text: 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C , 5 5 5 5 5 5 5 5 5 5 5 5 5 SILICON DIODE ARRAYS UNI Part Number (Uni) For , SILICON DIODE ARRAYS 6 DO-214AA (SMB J-Bend) Cathode Band 2.16 0.155 (3.94) 0.130 (3.30


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PDF DO-214AA 051 6V8A diode 6v8a 6V8C smb 440a 16.7 do-214aa 012 6V8A diode 68A DEVICE MARKING CODE 150A device code 150a diode marking 33A on
103KT1608-1P

Abstract: Ishizuka THERMISTOR 100.01
Text: control, a diode for protection against reverse current, a thermistor built-in a battery pack, and a , Temperature P 5( 51°C ) : Maximum Chargeable Temperature T gh t P 4( T 41°C) :H i Tem perature Faul at C , 41°C Ta < 51°C 1 0 1 Ta 51°C 0 0 Normal 1 0 t>15min.(Trickle Charge


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PDF 2000/May. R5410XXXB 103KT1608-1P Ishizuka THERMISTOR 100.01
2005 - ic 67a smd

Abstract: SN65HV230 ADC7828 76d 5d smd smd diode 30D PCM-982 smd code "67A" pwm diode smd code 57A two pin diode SMD 54a DS2401 NC
Text: small size through modern SMD technology and multi-layer design. In accordance with the complexity of the module, 0402-packaged SMD and laser-drilled Microvias components are used on the boards , I 6C VBAT 8C 9C 26C 48C 49C 50C 51C 53C 54C 55C 56C 58C 59C 60C 61C 10C , Power-down supply voltage VPD is generated by VBAT or +3V3 using a diode switching circuitry. VPD serves as , address latch signal (ALE). 1+2 2+3 X Package Type J2 1+2 2+3 0R in SMD 0402 Selection of


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PDF phyCORE-MCF548x L-645e D-55135 ic 67a smd SN65HV230 ADC7828 76d 5d smd smd diode 30D PCM-982 smd code "67A" pwm diode smd code 57A two pin diode SMD 54a DS2401 NC
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