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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode s4 53a Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - diode s4 53a

Abstract:
Text: DS = ­10V, V GS = ­4.5 V ID = ­5.3 A, 21 4.5 6 Drain­Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain­Source Diode Forward Current Drain­Source Diode Forward Voltage , 75 100 o ID = - 5.3A VGS = -4.5V ID = -2.7A 0.06 0.05 0.04 T A = 125 C 0.03 T A = 25 C 0.02 , 1.4 -V GS, GATE TO SOURCE VOLTAGE (V) -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and


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PDF FDW2506P diode s4 53a marking S4 53A
2008 - SMC6G070-060-1

Abstract:
Text: IGBT Thermal Resistance RthjC Diode Thermal Resistance RthjC Pin-to-Case Voltage Isolation, at room , 200 5.3 50 220 V mV us 0.200 0.250 0.280 V 10 12 15 kHz Diode , times are illustrated in Fig. 6. During the on time, both switches S1 and S4 are on, the current flows , the motor current circulates through the lower switch S4 and D2. The motor is assumed to be operated , and S4 are turned off and S2 and S3 are turned on. Under this condition motor current very quickly


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PDF SMC6G070-060-1 SMC6G060-120-1 00V/70A, 200V/60A SMC6G070-060-1 diode s4 53a IGBT 1500v 50A SMC6G060-120-1 210C bdc motor speed control igbt 1500V
Not Available

Abstract:
Text: , P4) SOIC ( S4 ) a PERFORM4 \C E 53 LCC (L5-1) Means Quality, Service and Speed , Voltage \ Typ’ 0.8 -0.7 Input Clamp Diode Voltage -1.2 V V cc=3V ,V IN= 0 .2 V ,o , P29FCT52A/ 53A Symbol Parameter MIL P29FCT52B/53B P29FCT52C/53C MIL MIL COM’L COMâ , as shown in Figure 1. AC OPERATING REQUIREMENTS P29FCT52A/ 53A Symbol Parameter MIL COMâ , D SO L Plastic DIP CERDIP Small Outline IC Leadless Chip Carrier 52A 53A 52 B 53B 52C


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PDF P29FCT52A/B/C P29PCT52A/B/C) P29FCT53A/B/C P29PCT53A/B/C) Am2952/53 P29FCTxxx AE1606 MIL-STD-883,
2000 - 2506p

Abstract:
Text: nC Drain­Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain­Source Diode Forward Current VSD Drain­Source Diode Forward Voltage VGS = 0 V, IS = ­0.83 A , , DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 30 0.07 ID = - 5.3A VGS = , 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2506P Rev. C (W


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PDF FDW2506P 2506p diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P
ilc7660

Abstract:
Text: temperature and voltage range without need for an external diode , low quiescent current, and high power , an external diode ■Low supply current 200 fiA max ■Pin-for-pin replacement for the 7660 â , LMC7660 can operate without an external diode over the full temperature and voltage range. The LMC7660 can also be used with the external diode Dx, when replacing previous 7660 designs. Note ft The test , , switches S2 and S4 are open. After Cp charges to V+, S1 and S3 are opened, S2 and S4 are then closed. By


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PDF LMC7660 737-701B ilc7660 SI 7660 CJ lcm7660 7660s J06A diode s4 53 LMC7660IM LMC7660IN LMC7660MJ
2010 - DD2030

Abstract:
Text: 53A , RG = 4.3 J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv , - 53A ) 6 0.9 1.2 15 /dt Peak Diode Recovery dv/dt Reverse Recovery Time (IS = - 53A , di/dt = , APT53N60BC6 APT53N60SC6 600V 53A 0.070 C O OLMOS Power Semiconductors Super Junction MOSFET , 4 APT53N60B_SC6 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 53A @ 25°C INDUCTIVE SWITCHING VGS = 15V VDD = 400V ID = 53A @ 25°C RG = 4.3 5 MIN TYP 4020 3545 330 154 26 82


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PDF APT53N60BC6 APT53N60SC6 O-247 DD2030 diode 53a APT53N60B
2010 - AN-994

Abstract:
Text: the integral reverse G p-n junction diode . TJ = 25°C, IS = 53A , VGS = 0V TJ = 25°C, IF = 53A , °C, ID = 1mA m VGS = 10V, ID = 53A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 53A µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 53A VDS = 60V VGS = 10V ns VDD = 38V ID = 53A RG = 6.2 VGS = 10V nH Between lead, D f f f 6mm (0.25in.) from , , VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 60V, = 1.0MHz VGS = 0V, VDS = 0V to 60V Diode


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PDF 5488A IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF EIA-418. O-220AB AN-994 IRF2807ZPBF
2010 - APT53N60BC6

Abstract:
Text: = 15V ID = 53A , RG = 4.3 873 J 1478 INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 53A , RG = 4.3 995 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic , - 53A ) 0.9 UNIT Amps 1.2 Volts 15 V/ns /dt Peak Diode Recovery dv/dt t rr , APT53N60BC6 APT53N60SC6 600V C OLMOS O 53A 0.070 Super Junction MOSFET Power , = 400V ID = 53A @ 125°C RG = 4.3 Eon UNIT 330 VGS = 10V VDD = 300V ID = 53A @ 25


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PDF APT53N60BC6 APT53N60SC6 O-247 APT53N60BC6
Not Available

Abstract:
Text: ° C VDD = 400V, VGS = 15V ID = 53A , RG = 4.3 995 SOURCE-DRAIN DIODE RATINGS AND , IS (Body Diode ) 3 159 (VGS = 0V, IS = - 53A ) 0.9 Amps 1.2 Volts 15 6 , APT53N60BC6 APT53N60SC6 600V C OLMOS O 53A 0.070 Super Junction MOSFET Power , INDUCTIVE SWITCHING @ 25° C VDD = 400V, VGS = 15V ID = 53A , RG = 4.3 5 pF 154 INDUCTIVE SWITCHING VGS = 15V VDD = 400V ID = 53A @ 125°C RG = 4.3 Eon UNIT 330 VGS = 10V VDD = 300V


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PDF APT53N60BC6 APT53N60SC6 O-247
2003 - igbt 50V 420A

Abstract:
Text: = 250µA V/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 53A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 53A µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 53A VDS = 60V VGS = 10V ns VDD = 38V ID = 53A RG = 6.2 VGS = 10V nH Between lead, D f , = 0V to 60V Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ­­­ ­­­ 89 ISM (Body Diode ) Pulsed Source Current ­­­ 350 VSD trr Qrr


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PDF 4659A IRF2807Z IRF2807ZS IRF2807ZL O-220AB igbt 50V 420A AN-994 diode 53a IRF2807Z IRF2807ZL IRF2807ZS
Not Available

Abstract:
Text: D showing the integral reverse G p-n junction diode . TJ = 25°C, I S = 53A , VGS = 0V TJ , Reference to 25° I D = 1mA C, mΩ VGS = 10V, ID = 53A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 53A µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 53A VDS = 60V VGS = 10V ns VDD = 38V ID = 53A RG = 6.2Ω VGS = 10V nH Between lead, D f f f , 60V Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current


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PDF 4659A IRF2807Z IRF2807ZS IRF2807ZL O-220AB
Not Available

Abstract:
Text: = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 53A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 53A µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 53A VDS = 60V VGS = 10V ns VDD = 38V ID = 53A RG = 6.2Ω VGS = 10V nH , , ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 89 ISM (Body Diode ) Pulsed Source


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PDF 5488A IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF EIA-418. O-220AB
4501SS

Abstract:
Text: SSG4501 N Channel 7A, 30V,RDS(ON) 28m P Channel - 5.3A , -30V,RDS(ON) 50m Elektronische , SSG4501 N Channel 7A, 30V,RDS(ON) 28m P Channel - 5.3A , -30V,RDS(ON) 50m Elektronische Bauelemente , V IS=7A, VGS=0V.Tj=25 oC Is _ _ 1.67 A VD=VG=0V,VS=1.2V Source-Drain Diode Parameter 2 Forward On Voltage Continous Source Current (Body Diode ) Symbol Test Condition , of 9 SSG4501 N Channel 7A, 30V,RDS(ON) 28m P Channel - 5.3A , -30V,RDS(ON) 50m Elektronische


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PDF SSG4501 SSG4501 27Typ. 01-Jun-2002 4501SS 30v N channel MOS FET 4501s P Channel Power MOS FET Power Switching power mosfet P-channel
2003 - 94659

Abstract:
Text: = 250µA V/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 53A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 53A µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 53A VDS = 60V VGS = 10V ns VDD = 38V ID = 53A RG = 6.2 VGS = 10V nH Between lead, D f , = 0V to 60V Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ­­­ ­­­ 89 ISM (Body Diode ) Pulsed Source Current ­­­ 350 VSD trr Qrr


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PDF 4659A IRF2807Z IRF2807ZS IRF2807ZL Automotive23 EIA-418. O-220AB 94659 igbt 50V 420A IRF2807Z AN-994 IRF2807ZL IRF2807ZS
2008 - Not Available

Abstract:
Text: MagnaChip Semiconductor Ltd. MDS3651– P-Channel Trench MOSFET -30V, - 5.3A ,35m Source-Drain Diode , Preliminary – Subject to change without notice P-Channel Trench MOSFET -30V, - 5.3A , 35m , - 5.3A (VGS=10V) RDS(ON) <35m @ VGS = -10V <58m @ VGS = -4.5V Applications Inverters General , €“ P-Channel Trench MOSFET -30V, - 5.3A ,35m MDS3651 Preliminary – Subject to change without notice , Body Diode Characteristics Rev. A 02/08 2 MagnaChip Semiconductor Ltd. MDS3651– P-Channel


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PDF MDS3651 MDS3651â
AN-994

Abstract:
Text: = 250µA V/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 53A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 53A µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 53A VDS = 60V VGS = 10V ns VDD = 38V ID = 53A RG = 6.2 VGS = 10V nH Between lead, D f , = 0V to 60V Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ­­­ ­­­ 89 ISM (Body Diode ) Pulsed Source Current ­­­ 350 VSD trr Qrr


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PDF 4659A IRF2807Z IRF2807ZS IRF2807ZL EIA-418. O-220AB AN-994 IRF2807Z IRF2807ZL IRF2807ZS IRF530S
AN-994

Abstract:
Text: Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 53A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 53A µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 53A VDS = 60V VGS = 10V ns VDD = 38V ID = 53A RG = 6.2 VGS = 10V nH , 1.0MHz VGS = 0V, VDS = 0V to 60V Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ­­­ ­­­ 89 ISM (Body Diode ) Pulsed Source Current ­­­ ­­­


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PDF IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF O-220AB. O-220AB AN-994 IRF2807Z IRF2807ZL IRF2807ZS
2008 - H9435S

Abstract:
Text: , - 5.3A ) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features 5 4 6 3 · RDS(on)=60m@VGS=-10V, ID=- 5.3A 7 2 · RDS(on)=90m@VGS=-4.5V, ID=-4.2A 8 1 , 82 90 VGS=-10V, ID=- 5.3A - 50 60 Gate Threshold Voltage VDS=VGS, ID=-250uA -1 , Transconductance VDS=-15V, ID=- 5.3A 4 7 - S - 9.52 - - 3.43 - · Static BVDSS , =-15V, ID=- 5.3A , VGS=-10V VDS=-15V, VGS=0V, f=1MHz Turn-off Fall Time nC PF Ns ·


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PDF MOS200509( H9435S/H9435DS H9435S H9435DS 183oC 217oC 260oC 245oC H9435S H9435DS
DI9435

Abstract:
Text: On-Resistance Tj = 125°C RDS (ON) — 0.038 0.054 0.046 0.064 0.05 0.10 0.07 0.09 Q. vGS =-10V, id = - 5.3A VGS = -10V, ID = - 5.3A VGS = -6.0V, Id = -4.7A VGS =-4.5V, IQ = -4.2A On-State Drain Current ID(ON) -20 , €” Ö VDS = -15V, ID = - 5.3A DYNAMIC CH ACT E RISTICS Input Capacitance ClSS — 950 — PF VDS , Vds-15V. Id - - 5.3A . VGS =-10V Gate-Source Charge Qgs — 3.0 — nC Gate-Drain Charge Qgd — 9.0 — nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source


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PDF DI9435 DS11503 DI9435
ssm9435

Abstract:
Text: on-resistance Fast switching G SO-8 S 50m ID D D -30V R DS(ON) D D - 5.3A S , to 25°C, ID=-1mA - -0.037 - V/°C Static Drain-Source On-Resistance VGS=-10V, ID=- 5.3A , V VDS=-10V, ID=- 5.3A - 10 - S Drain-Source Leakage Current (Tj=25 C) VDS , -25 uA Gate-Source Leakage VGS= ± 20V - - ID=- 5.3A - 20 40 nC VGS(th , =1.0MHz - 120 180 pF Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions


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PDF SSM9435M ssm9435
2011 - Not Available

Abstract:
Text: =0V VGS=-10V, ID=- 5.3A VSD Diode Forward Voltage Pulsed Body-Diode Current 32 31.5 Maximum , =-15V, RL=2.8Ω, RGEN=3Ω pF 17 ns 5 ns IF=- 5.3A , dI/dt=100A/µs 15 Body Diode Reverse Recovery Charge IF=- 5.3A , dI/dt=100A/µs 9.7 ns nC Body Diode Reverse Recovery Time , ID = 7.2A (VGS=10V) RDS(ON) < 24mΩ (VGS=10V) < 36mΩ (VGS=4.5V) p-channel -30V - 5.3A (VGS , ) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage


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PDF AO4620 AO4620
2010 - H9435S

Abstract:
Text: , - 5.3A ) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features 5 4 6 3 RDS(on)=60m@VGS=-10V, ID=- 5.3A 7 2 RDS(on)=90m@VGS=-4.5V, ID=-4.2A 8 1 , =-10V, ID=- 5.3A - 50 60 Static BVDSS Drain-Source Breakdown Voltage RDS(on , VDS=-15V, ID=- 5.3A 4 7 - S - 9.52 - - 3.43 - m Dynamic Qg , =-15V, ID=- 5.3A , VGS=-10V VDS=-15V, VGS=0V, f=1MHz Turn-off Fall Time nC PF Ns


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PDF MOS200509( H9435S/H9435DS H9435S H9435DS 217oC 260oC 245oC H9435S H9435DS SO-8 V 052
2003 - 94659

Abstract:
Text: Recovery Charge Forward Turn-On Time 1.3 69 120 p-n junction diode . TJ = 25°C, IS = 53A , VGS = 0V , °C, ID = 1mA m VGS = 10V, ID = 53A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 53A µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 53A VDS = 60V VGS = 10V ns VDD = 38V ID = 53A RG = 6.2 VGS = 10V D nH Between lead, f f f 6mm (0.25in.) from , , VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 60V, = 1.0MHz VGS = 0V, VDS = 0V to 60V Diode


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PDF IRF2807Z O-220AB IRF1010 94659 94659 logic IRF2807Z
2002 - STE53NC50

Abstract:
Text: N-CHANNEL 500V - 0.070 - 53A ISOTOP PowerMeshTM II MOSFET TYPE STE53NC50 n n n n n STE53NC50 , 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery , Temperature Value 500 500 ± 30 53 33 212 460 3.68 3 2500 ­ 65 to 150 150 (1) ISD 53A , di/dt 100 A/µs, VDD 24V , 26.5A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 400V, I D = 53A , VGS = 10V Min. Typ. 46 70 , Rise Time Fall Time Cross-over Time Test Conditions VDD = 400V, I D = 53A , R G = 4.7, VGS = 10V (see


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PDF STE53NC50 STE53NC50
2000 - DI9435

Abstract:
Text: ) - 0.038 0.054 0.046 0.064 0.05 0.10 0.07 0.09 W VGS = -10V, ID = - 5.3A VGS = -10V, ID = - 5.3A VGS = -6.0V, ID = -4.7A VGS = -4.5V, ID = -4.2A ID(ON) -20 -5.0 - - A , - 5.3A Input Capacitance CISS - 950 - pF Output Capacitance COSS - 610 , DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode IS - - Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Notes: VSD - -0.85 -1.3


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PDF DI9435 DS11503 DI9435
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