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Part Manufacturer Description Datasheet Download Buy Part
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
LTC4358CDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode s-05-02 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - Not Available

Abstract:
Text: DEVICE PERFORMANCE SPECIFICATION Revision 12 MTD/PS- 0502 August 6, 2008 KODAK KAI-1010 IMAGE , .37 ©Eastman Kodak Company, 2008 www.kodak.com/go/imagers Revision 12 MTD/PS- 0502 p2 , .33 ©Eastman Kodak Company, 2008 www.kodak.com/go/imagers Revision 12 MTD/PS- 0502 p3 SUMMARY , ) Industrial Imaging ©Eastman Kodak Company, 2008 www.kodak.com/go/imagers Revision 12 MTD/PS- 0502 p4 , . ©Eastman Kodak Company, 2008 www.kodak.com/go/imagers Revision 12 MTD/PS- 0502 p5 DEVICE


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PDF MTD/PS-0502 KAI-1010 MTD/PS-0502 KAI-1011-CBA KAI-1010-AAA
2010 - KAI-1001

Abstract:
Text: DEVICE PERFORMANCE SPECIFICATION Revision 13.0 MTD/PS- 0502 July 29, 2010 KODAK KAI-1010 IMAGE , . 37 ©Eastman Kodak Company, 2010 www.kodak.com/go/imagers Revision 13 MTD/PS- 0502 p2 , . 33 ©Eastman Kodak Company, 2010 www.kodak.com/go/imagers Revision 13 MTD/PS- 0502 p3 , ©Eastman Kodak Company, 2010 www.kodak.com/go/imagers Revision 13 MTD/PS- 0502 p4 ORDERING , www.kodak.com/go/imagers Revision 13 MTD/PS- 0502 p5 DEVICE DESCRIPTION ARCHITECTURE 4 dark lines at


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PDF MTD/PS-0502 KAI-1010 KAI-1011-CBA KAI-1010-AAA MTD/PS-1197 D263T MTD/PS-0502 KAI-1001 kodak
2006 - DIODE marking ED X9

Abstract:
Text: DEVICE PERFORMANCE SPECIFICATION Revision 11 MTD/PS- 0502 October 17, 2006 KODAK KAI-1010 KAI , .38 ©Eastman Kodak Company, 2006 www.kodak.com/go/imagers Revision 11 MTD/PS- 0502 p2 Reliability , .34 ©Eastman Kodak Company, 2006 www.kodak.com/go/imagers Revision 11 MTD/PS- 0502 p3 , Revision 11 MTD/PS- 0502 p4 ORDERING INFORMATION Catalog Number 2H4615 2H4115 2H4614 2H4121 2H4613 , Revision 11 MTD/PS- 0502 p5 DEVICE DESCRIPTION ARCHITECTURE 4 dark lines at bottom of image V1 V2 6


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PDF MTD/PS-0502 KAI-1010 KAI-1011 DIODE marking ED X9 KAI-1001
1000w subwoofer amplifier

Abstract:
Text: (W) 1 TK2350, Rev 1.0/ 05.02 Tr i path Technol ogy, I nc. - Techni c a l I nf or m a t i on , guaranteed specific performance limits. 2 TK2350, Rev 1.0/ 05.02 Tr i path Technol ogy, I nc. - Techni c , using a RVPPSENSE and RVNNSENSE value 3 TK2350, Rev 1.0/ 05.02 Tr i path Technol ogy, I nc. - , / 05.02 Tr i path Technol ogy, I nc. - Techni c a l I nf or m a t i on TK2350 Block Diagram , Output Left LC Filter Output Right Output MOSFETs 5 TK2350, Rev 1.0/ 05.02 Tr i path


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PDF TK2350 TC2001/TP2350 TK2150 TK2350, 1000w subwoofer amplifier tp2350 SCHEMATIC 1000w power amplifier stereo EB-TK2350 TRIPATH TA3020 1000w subwoofer amplifier PCB layout RB-TK2350 5.1 speaker with subwoofer circuit diagram 1000w 500 watt subwoofer mosfet vn10
1998 - 2SC2016

Abstract:
Text: current limiting resistance : R D1 : Diode (Item of smaller VF, IR is recommendable) D2 : Using a shotkey , voltage regulator IC D (2) with using Zener diode D1 R IC R 5V 3.3V Max. Load , 1.8max. 1.20±0.1 0.5±0.2 1.0 1.5 0.5±0.2 0.5±0.2 0.5±0.2 +0 ø4.80 ­0.2 ø4 , 90 ±4 2.9±0.3 0.5±0.2 2.0±0.3 ø6.8max. ø6.8max 1.8±0.5 0.5±0.2 1.0±0.3 2.0±0.3 , .8max. 0.5±0.2 1.0±0.3 1.5±0.5 2.0±0.3 ø6.8max. 0.5±0.2 1.0±0.3 1.8±0.5 DIMENSIONS OF


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PDF 1-9807-020-MS/AC 2SC2016 SEIKO MS621 SR927W IL37N FL28N SR626SW MS621 FL11N SR421SW SL920 SR416
2000 - 2SJ607

Abstract:
Text: gate protection diode 2SJ607-ZJ TO-263 2SJ607-Z TO-220SMDNote Note TO-220SMD package is , QGD 48 nC Body Diode Forward Voltage ID = ­83 A, VDD= ­48 V, VGS = ­10 V VF(S-D) IF , 0.7±0.2 (0 ) .8R 1.0±0.3 0.5±0.2 2.54 TYP. 1 3.0±0.5 8.5±0.2 1.0±0.5 3 2.54 TYP , R) .8 (0 (0 0.5±0.2 3 2.54 TYP. 2.8±0.2 1.4±0.2 11±0.4 5.7±0.4 8.5±0.2 1.0±0.5 4 2.54 TYP. 1 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP


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PDF 2SJ607 2SJ607 O-220AB 2SJ607-S O-262 2SJ607-ZJ O-263 2SJ607-Z O-220SMDNote 2SJ607-Z 2SJ607-S 2SJ607-ZJ MP-25 MP-25Z NEC 8502
2000 - Not Available

Abstract:
Text: : Ciss = 2300 pF TYP. · Built-in gate protection diode Note TO-220SMD package is produced only in , Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs , 0.75±0.3 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 0.75±0.1 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 3) TO-263 (MP , TYP. 1 2 (0 .5R ) 1.4±0.2 ) .8R 1.0±0.3 0.5±0.2 2.54 TYP. 1 2 0.5±0.2 3 2.54 TYP


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PDF 2SK3481 2SK3481 2SK3481-S 2SK3481-ZJ 2SK3481-Z O-220AB O-262 O-263 O-220SMDNote
1998 - 2SK3111

Abstract:
Text: (0 3 2.54 TYP. Body Diode Gate ) .5R 2.8±0.2 2.54 TYP. 1 Drain ) .8R (0 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Gate Protection Diode Source The , gate protection diode ABSOLUTE MAXIMUM RATING (TA = 25°C) Drain to source voltage (VGS = 0 V , nC Gate to drain charge QGD ID = 20 A 20 nC Diode forward voltage VF(S-D) IF , 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1


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PDF 2SK3111 2SK3111 O-262 2SK3111-ZJ O-220AB 2SK3111-S O-263 2SK3111-S 2SK3111-ZJ MP-25
2000 - 2SK3432

Abstract:
Text: 1.0±0.3 2 Remark Body Diode Gate ) .5R 8R) 0. ( (0 0.5±0.2 3 2.54 TYP. 2.8±0.2 , -220AB) · Low Ciss: Ciss = 9500 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = , nC tr Body Diode Forward Voltage ID = 83 A , VDD = 32 V, VGS = 10 V VF(S-D) IF = 83 A , 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.5±0.2 2.8±0.2 2.54 TYP. 0.75±0.3 2.54 TYP , 0.75±0.1 2.54 TYP. 1.0±0.5 1.3±0.2 10.0 12.7 MIN. 3.0±0.3 10.6 MAX. 0.5±0.2


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PDF 2SK3432 2SK3432 O-220AB 2SK3432-S O-262 2SK3432-Z O-220SMD O-220AB) TO220-SMD 2SK3432-S 2SK3432-Z MP-25 MP-25Z
2000 - 2SJ603

Abstract:
Text: Ciss: Ciss = 1900 pF TYP. · Built-in gate protection diode Note Note TO-220SMD package is , Diode Forward Voltage ID = ­25 A, VDD= ­48 V, VGS = ­10 V VF(S-D) IF = ­25 A, VGS = 0 V 1.0 , (0 ) .8R 1.0±0.3 0.5±0.2 2.54 TYP. 1 3.0±0.5 8.5±0.2 1.0±0.5 3 2.54 TYP. 2 , ) .8 (0 (0 0.5±0.2 3 2.54 TYP. 2.8±0.2 1.4±0.2 11±0.4 5.7±0.4 8.5±0.2 1.0±0.5 4 2.54 TYP. 1 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP


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PDF 2SJ603 2SJ603 O-220AB 2SJ603-S O-262 2SJ603-ZJ O-263 2SJ603-Z O-220SMD 2SJ603-S 2SJ603-Z 2SJ603-ZJ MP-25 MP-25Z TO-220SMD
1998 - 1302 diode

Abstract:
Text: diode ABSOLUTE MAXIMUM RATING (TA = 25°C) Drain to source voltage (VGS = 0 V) VDSS 200 V , charge QGD ID = 10 A 7.5 nC Diode forward voltage VF(S-D) IF = 10 A, VGS = 0 V , . 1.3±0.2 1.3±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 12.7 MIN , . (10) 1.3±0.2 5.7±0.4 1.4±0.2 0.7±0.2 2 Body Diode Gate ) .5R (0 ) .8R (0 3 2.54 TYP. 2.8±0.2 2.54 TYP. 1 Drain 8.5±0.2 1.0±0.5 4 0.5±0.2 1


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PDF 2SK3109 2SK3109 O-262 2SK3109-ZJ O-220AB 2SK3109-S O-263 1302 diode 2SK3109-S 2SK3109-ZJ MP-25
1998 - 2SK3112

Abstract:
Text: Ciss = 1500 pF TYP. @VDS = 10 V, VGS = 0 V ·Built-in gate protection diode ABSOLUTE MAXIMUM RATING , charge QGS VGS = 10 V 8 nC Gate to drain charge QGD ID = 25 A 30 nC Diode , 1 1 2 3 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 8.5±0.2 15.5 MAX. 5.9 MIN. 4 12.7 MIN. 3.0±0.3 , 1.4±0.2 0.7±0.2 2 3 2.54 TYP. 2.8±0.2 2.54 TYP. 1 Drain .5 (0 Body Diode Gate


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PDF 2SK3112 2SK3112 O-262 2SK3112-ZJ O-220AB 2SK3112-S O-263 2SK3112-S 2SK3112-ZJ MP-25
2000 - D1459

Abstract:
Text: 1.0±0.3 2 Remark Body Diode Gate ) .5R 8R) 0. ( (0 0.5±0.2 3 2.54 TYP. 2.8±0.2 , -220AB) 5 · Low Ciss: Ciss = 2800 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA , nC Body Diode Forward Voltage ID = 80 A , VDD = 32 V, VGS = 10 V VF(S-D) IF = 80 A, VGS = , 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.5±0.2 2.8±0.2 2.54 TYP. 0.75±0.3 2.54 TYP , 0.75±0.1 2.54 TYP. 1.0±0.5 1.3±0.2 10.0 12.7 MIN. 3.0±0.3 10.6 MAX. 0.5±0.2


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PDF 2SK3430 2SK3430 O-220AB 2SK3430-S O-262 2SK3430-Z O-220SMD O-220AB) D1459 2sk3430 equivalent 2SK3430-Z 2SK3430-S in 3003 TRANSISTOR MP-25 MP-25Z
2000 - 2SK3431

Abstract:
Text: 1.0±0.3 2 Remark Body Diode Gate ) .5R 8R) 0. ( (0 0.5±0.2 3 2.54 TYP. 2.8±0.2 , ) 5 · Low Ciss: Ciss = 6100 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA , nC tr Body Diode Forward Voltage ID = 83 A , VDD = 32 V, VGS = 10 V VF(S-D) IF = 83 A , 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.5±0.2 2.8±0.2 2.54 TYP. 0.75±0.3 2.54 TYP , 0.75±0.1 2.54 TYP. 1.0±0.5 1.3±0.2 10.0 12.7 MIN. 3.0±0.3 10.6 MAX. 0.5±0.2


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PDF 2SK3431 2SK3431 O-220AB 2SK3431-S O-262 2SK3431-Z O-220SMD O-220AB) 2SK3431-S 2SK3431-Z MP-25 MP-25Z
2000 - Not Available

Abstract:
Text: : Ciss = 3600 pF TYP. · Built-in gate protection diode Note TO-220SMD package is produced only in , Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs , 0.75±0.3 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 0.75±0.1 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 3) TO-263 (MP , TYP. 1 2 ( R 0.5 ) 1.4±0.2 .8 R) 1.0±0.3 0.5±0.2 2.54 TYP. 1 2 0.5±0.2 3 2.54


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PDF 2SK3480 2SK3480 2SK3480-S 2SK3480-ZJ 2SK3480-Z O-220AB O-262 O-263 O-220SMDNote
1999 - 2SK3430

Abstract:
Text: 1.4±0.2 1.0±0.3 2 Remark Body Diode Gate ) .5R 8R) 0. ( (0 0.5±0.2 3 2.54 TYP , , ID = 40 A) · Low Ciss: Ciss = 2700 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM , QGD 15 nC Body Diode Forward Voltage ID = 80 A , VDD = 32 V, VGS = 10 V VF(S-D) IF = , . 3.6±0.2 12.7 MIN. 6.0 MAX. 1.3±0.2 2 1.3±0.2 0.5±0.2 2.8±0.2 2.54 TYP. 0.75±0.3 , . 0.5±0.2 2.8±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3


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PDF 2SK3430 2SK3430 O-220AB 2SK3430-S O-262 2SK3430-Z O-220SMD O-220AB) 2SK3430-S 2SK3430-Z D1459 MP-25 MP-25Z
1999 - 2SK3295

Abstract:
Text: ) ( R 0.5 ) .8R (0 Body Diode Gate 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain , gate charge Qg = 24 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) · Built-in gate protection diode · , Diode Forward Voltage VF(S-D) IF = 35 A, VGS = 0 V 1.0 V Reverse Recovery Time trr , . 1.3±0.2 4 1 1 2 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 , . 2)TO-262 (TO-220 Fin Cut) 1.0±0.5 1)TO-220AB (MP-25) 0.5±0.2 2.8±0.2 2.54 TYP


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PDF 2SK3295 2SK3295 O-220AB 2SK3295-S O-262 2SK3295-ZJ O-263 2SK3295-S 2SK3295-ZJ MP-25
2000 - 2SK3433

Abstract:
Text: ) · Low Ciss: Ciss = 1500 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = , Gate to Source Charge QGS 5 nC Gate to Drain Charge QGD 8 nC Body Diode Forward , 1.3±0.2 0.5±0.2 2.8±0.2 2.54 TYP. 0.75±0.3 2.54 TYP. 2 3 8.5±0.2 1 1 2 3 , 1.3±0.2 10.0 12.7 MIN. 3.0±0.3 10.6 MAX. 0.5±0.2 2.8±0.2 2.54 TYP. 1.Gate 2 , -25Z) EQUIVALENT CIRCUIT 4.8 MAX. (10) 1.3±0.2 Drain 1.4±0.2 1.0±0.3 2 Remark Body Diode


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PDF 2SK3433 2SK3433 O-220AB 2SK3433-S O-262 2SK3433-Z O-220SMD O-220AB) 2SK3433-S 2SK3433-Z m7 diode MP-25 MP-25Z
1999 - 2SK3434

Abstract:
Text: 1.4±0.2 1.0±0.3 2 Remark Body Diode Gate ) .5R 8R) 0. ( (0 0.5±0.2 3 2.54 TYP , , ID = 24 A) · Low Ciss: Ciss = 2000 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM , QGD 10 nC Body Diode Forward Voltage ID = 48 A , VDD = 48 V, VGS = 10 V VF(S-D) IF = , . 3.6±0.2 12.7 MIN. 6.0 MAX. 1.3±0.2 2 1.3±0.2 0.5±0.2 2.8±0.2 2.54 TYP. 0.75±0.3 , . 0.5±0.2 2.8±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3


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PDF 2SK3434 2SK3434 O-220AB 2SK3434-S O-262 2SK3434-Z O-220SMD O-220AB) 2SK3434-S 2SK3434-Z MP-25 MP-25Z
1999 - 2SK3296

Abstract:
Text: ) ( R 0.5 ) .8R (0 Body Diode Gate 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain , gate charge Qg = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) · Built-in gate protection diode · , Diode Forward Voltage VF(S-D) IF = 35 A, VGS = 0 V 1.0 V Reverse Recovery Time trr , . 1.3±0.2 4 1 1 2 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 , . 2)TO-262 (TO-220 Fin Cut) 1.0±0.5 1)TO-220AB (MP-25) 0.5±0.2 2.8±0.2 2.54 TYP


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PDF 2SK3296 2SK3296 O-220AB 2SK3296-S O-262 2SK3296-ZJ O-263 2SK3296-S 2SK3296-ZJ MP-25 nec 2sk3296
2001 - Not Available

Abstract:
Text: 12.5 m MAX. (VGS = 10 V, ID = 42 A) · Low Ciss: Ciss = 5900 pF TYP. · Built-in gate protection diode , Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse , . 8.5±0.2 0.75±0.1 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 3) TO-263 (MP , 0.7±0.2 2.54 TYP. 1.4±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0 .5R 2.54 TYP. 0.8 R P. . TY R


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PDF 2SK3511 2SK3511 2SK3511-S 2SK3511-ZJ 2SK3511-Z O-220AB O-262 O-263 O-220SMD
2000 - NEC 8502

Abstract:
Text: protection diode 2SJ604-ZJ TO-263 2SJ604-Z TO-220SMDNote Note TO-220SMD package is produced , Diode Forward Voltage ID = ­45 A, VDD= ­48 V, VGS = ­10 V VF(S-D) IF = ­45 A, VGS = 0 V 1.0 , ) 1.0±0.3 0.5±0.2 2.54 TYP. 1 3.0±0.5 8.5±0.2 1.0±0.5 3 2.54 TYP. 2.8±0.2 2 1.4±0.2 , (0 (0 0.5±0.2 3 2.54 TYP. 2.8±0.2 5.7±0.4 8.5±0.2 1.0±0.5 4 2.54 TYP. 1 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 8.5±0.2 4 10.0


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PDF 2SJ604 2SJ604 O-220AB 2SJ604-S O-262 2SJ604-ZJ O-263 2SJ604-Z O-220SMDNote NEC 8502 2SJ604-S 2SJ604-Z 2SJ604-ZJ MP-25 MP-25Z
2000 - 2SJ606

Abstract:
Text: gate protection diode 2SJ606-ZJ TO-263 2SJ606-Z TO-220SMDNote Note TO-220SMD package is , QGD 30 nC Body Diode Forward Voltage ID = ­83 A, VDD= ­48 V, VGS = ­10 V VF(S-D) IF , 0.7±0.2 (0 ) .8R 1.0±0.3 0.5±0.2 2.54 TYP. 1 1.Gate 2.Drain 3.Source 4.Fin (Drain , ) .8 (0 (0 0.5±0.2 3 2.54 TYP. 2.8±0.2 1.4±0.2 11±0.4 5.7±0.4 8.5±0.2 1.0±0.5 4 2.54 TYP. 1 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP


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PDF 2SJ606 2SJ606 O-220AB 2SJ606-S O-262 2SJ606-ZJ O-263 2SJ606-Z O-220SMDNote 2SJ606-S 2SJ606-Z 2SJ606-ZJ D14654EJ1V0DS00 MP-25 MP-25Z transistor 3005 2
1999 - 2SK3353

Abstract:
Text: Remark Body Diode Gate ) .5R 8R) 0. ( (0 0.5±0.2 3 2.54 TYP. 2.8±0.2 2.54 TYP , Ciss: Ciss = 4750 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 , QGD 20 nC Body Diode Forward Voltage ID = 82 A , VDD = 48 V, VGS = 10 V VF(S-D) IF = , MAX. 1.3±0.2 2 3 1.3±0.2 0.5±0.2 2.8±0.2 2.54 TYP. 8.5±0.2 1 1 2 3 , 10.0 12.7 MIN. 3.0±0.3 10.6 MAX. 0.5±0.2 0.75±0.3 2.54 TYP. 2.8±0.2 2.54 TYP


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PDF 2SK3353 2SK3353 O-220AB 2SK3353-S O-262 2SK3353-Z O-220SMD 2SK3353-S 2SK3353-Z MP-25 MP-25Z
2000 - 2SJ602

Abstract:
Text: protection diode 2SJ602-ZJ TO-263 2SJ602-Z TO-220SMD Note Note TO-220SMD package is , QG Gate to Source Charge QGS 5 nC Gate to Drain Charge QGD 7 nC Body Diode , 0.5±0.2 2.54 TYP. 1 3.0±0.5 8.5±0.2 1.0±0.5 3 2.54 TYP. 2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 2 1.4±0.2 ) .5R (0 ) .5R R) .8 (0 (0 0.5±0.2 , 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 8.5±0.2 4 10.0


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PDF 2SJ602 2SJ602 O-220AB 2SJ602-S O-262 2SJ602-ZJ O-263 2SJ602-Z O-220SMD TO-220SMD 2SJ602,J602 2SJ602-S 2SJ602-Z 2SJ602-ZJ MP-25 MP-25Z
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