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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
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LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
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diode marking 74 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - Not Available

Abstract: No abstract text available
Text: ) Marking of conformity Approval mark Certification scheme CCA Protection class II DIODE S 100 V Voltage www.leister.com V~ 100 Leister Process Technologies Phone: +41 41 662 74 74 , PLASTIC WELDING, PROCESS HEAT, LASERSYSTEMS, MICROSYSTEMS Plastic Welding > Hand tools > DIODE S DIODE S Handy and powerful hot air welding tool with steplessly adjustable welding temperature and , mobile assembling applications when connected to the MINOR blower SPECIFICATIONS DIODE S 42 V


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PDF CH-6060
CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: (5.12 kN) Code: 3AFE 5716 8480 Type marking S6475R F (kN) 5 d * h(mm) 45 * 20 3AFE 1000 , Plessey ABB Väst Type marking S6476R FG600AL-26-5620 WG6013/ZA DGT304SE13X2 YSG700 * F (kN) 7 , Westcode ABB Väst ABB Semic. Type marking S6425R S6723R FG1000AL-26-8830 WG9013A3A YSG1000 , SLZF 117 (11.25 kN) Code 3AFE 5741 9709 Type marking S6426R S6594R FG1000AL-26-1430 WG14013 F (kN) 20 14 14 17 d * h (mm) 93 * 26 75 * 26 56 * 18 74 * 26 Note: In the inverters


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PDF 400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
2014 - 7N65G

Abstract: 7N65L
Text: VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, IS = 7.4 A, dIF / dt = 100A , Tube Tube Tube Tube Tape Reel 1 of 9 QW-R502-104.I 7N65  Power MOSFET MARKING , CO., LTD www.unisonic.com.tw MARKING 2 of 9 QW-R502-104.I 7N65  Power MOSFET , Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A


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PDF 7N65L-TA3-T 7N65G-TA3-T 7N65L-TF3-T 7N65G-TF3-T 7N65L-TFat QW-R502-104 7N65G 7N65L
2014 - Not Available

Abstract: No abstract text available
Text: RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source , 1 of 7 QW-R502-776.D 7N60K  Power MOSFET MARKING INFORMATION PACKAGE TO-220 TO , MARKING 2 of 7 QW-R502-776.D 7N60K  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 , Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A 7.4 A Continuous ID Drain , (Note 2) EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-263 142 TO


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PDF 7N60K 7N60K QW-R502-776
2014 - Not Available

Abstract: No abstract text available
Text: =520V, ID=7.4A Gate-Source Charge QGS VGS=10 V (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum , -770. D 7N65K  Power MOSFET MARKING INFORMATION PACKAGE MARKING TO-220 TO-220F TO , (Note 2) IAR 7.4 A 7.4 A Continuous ID Drain Current Pulsed (Note 2) IDM 29.6 A 200 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Peak Diode Recovery dv


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PDF 7N65K 7N65K QW-R502-770.
2014 - Not Available

Abstract: No abstract text available
Text: ) Gate-Drain Charge QGD 23 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A 1.4 V Maximum Continuous Drain-Source Diode IS 7.4 A , -220F (3) L: Lead Free, G: Halogen Free MARKING INFORMATION PACKAGE MARKING TO-220 TO-220F TO , Avalanche Current (Note 2) IAR 7.4 A 7.4 A Continuous ID Drain Current Pulsed (Note 2) IDM 29.6 , Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns 142 TO-220 PD W Power Dissipation TO-220F/TO


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PDF 7N65-M 7N65-M 7N65L-TA3-T 7N65G-TA3-T O-220 QW-R502-A28
2012 - Not Available

Abstract: No abstract text available
Text: SuperFET® II MOSFET 600 V, 7.4 A, 600 m Features · 650 V @TJ = 150°C · Max. RDS(on) = 600 m · Ultra Low Gate Charge (Typ. Qg = 20 nC) · Low Effective Output Capacitance (Typ. Coss.eff = 74 pF) · 100 , Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , ) (Note 3) (f > 1 Hz) 7.4 4.7 22.2 135 1.5 0.89 20 100 28 0.22 FCP600N60Z FCPF600N60Z 600 ±20 ±30 7.4 * 4.7 , www.fairchildsemi.com FCP600N60Z / FCPF600N60Z N-Channel MOSFET Package Marking and Ordering Information Device


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PDF FCP600N60Z FCPF600N60Z FCPF600N60Z
2009 - Not Available

Abstract: No abstract text available
Text: Forward Current - - 74 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 296 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 74 A - - , FDB120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild , Current IDM Drain Current EAS Peak Diode Recovery dv/dt A 52 (Note 1) 296 A


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PDF FDB120N10
2009 - Not Available

Abstract: No abstract text available
Text: Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 74 , Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 74 A - - 1.3 V trr Reverse , FDP120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild , Current IDM Drain Current EAS Peak Diode Recovery dv/dt A 52 (Note 1) 296 A


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PDF FDP120N10
2012 - FCD600N60Z

Abstract: No abstract text available
Text: FCD600N60Z N-Channel MOSFET March 2013 FCD600N60Z N-Channel SuperFET® II MOSFET 600 V, 7.4 , nC) · Low Effective Output Capacitance (Typ. Coss.eff = 74 pF) · 100% Avalanche Tested · ESD Improved , Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25oC) - Derate , ) (Note 1) (Note 3) (f > 1 Hz) FCD600N60Z 600 ±20 ±30 7.4 4.7 22.2 135 1.5 0.89 20 100 89 0.71 -55 to +150 , www.fairchildsemi.com FCD600N60Z N-Channel MOSFET Package Marking and Ordering Information Device Marking


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PDF FCD600N60Z FCD600N60Z
2001 - zener diode cross reference

Abstract: Zener Diode marking 3a zener diode cross reference 3.9 12v zener diode JEDEC 1N zener 8.2V 0.5W 12V 6A Zener Diode Analog devices TOP marking Information HOW TO FIND ZENER CURRENT 1N749A DIODE 1N750A
Text: the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum , information only. Rev. H4 Product Folder - Fairchild P/N 1N748A - 3.9V, 0.5W Zener Diode SEARCH , Products groups 3.9V, 0.5W Zener Diode Analog and Mixed Request samples Signal Datasheet Dotted line , Cross-reference search Product Product status Pricing* Package type Leads Package marking Packing method technical , Production $0.04 DO-35 2 1N748ATR Full Production $0.04 DO-35 2 $Y 1N 74 8A $Y 1N 74 8A STD CATHODE BAN


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PDF 1N746A 1N759A) 1N759A DO-35 1N749ATR DO-35 1N749A zener diode cross reference Zener Diode marking 3a zener diode cross reference 3.9 12v zener diode JEDEC 1N zener 8.2V 0.5W 12V 6A Zener Diode Analog devices TOP marking Information HOW TO FIND ZENER CURRENT DIODE 1N750A
2014 - Not Available

Abstract: No abstract text available
Text: CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum , Tube Tube Tube Tube Tape Reel 1 of 9 QW-R502-076.P 7N60  Power MOSFET MARKING , CO., LTD www.unisonic.com.tw MARKING 2 of 9 QW- R502-076.P 7N60  Power MOSFET , Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A 7.4 A Continuous ID Drain Current Pulsed (Note 2) IDM 29.6 A 530 mJ Single Pulsed (Note 3


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PDF 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TFt QW-R502-076.
2001 - NDS8425

Abstract: No abstract text available
Text: gate charge for superior switching performance. · 7.4 A, 20 V. · Fast switching speed · , ± 7.4 A ­ Continuous (Note 1a) ±20 ­ Pulsed PD Power Dissipation for Single Operation , Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity , VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 7.4 A 31 VDS , , ID = 7.4 A VGS = 4.5 V, ID = 7.4 A, TJ=125°C VGS=2.7 V, ID =7.2A 15 21 19 mV/°C 22 31 28


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PDF NDS8425 NDS8425
2014 - Not Available

Abstract: No abstract text available
Text: CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum , Tube Tube Tube Tube Tape Reel 1 of 9 QW-R502-076.O 7N60  Power MOSFET MARKING , CO., LTD www.unisonic.com.tw MARKING 2 of 9 QW- R502-076.O 7N60  Power MOSFET , Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A 7.4 A Continuous ID Drain Current Pulsed (Note 2) IDM 29.6 A 530 mJ Single Pulsed (Note 3


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PDF 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TFt QW-R502-076.
1999 - BB145

Abstract: DIODE Sp marking code BP317 943 vco st smd diode marking code str 4090
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145 VCO variable capacitance diode , diode in a SOD523 (SC-79) package. · C4: 3 pF; ratio: 2.1 · Low series resistance. PINNING , BB145 handbook, 2 columns 1 anode 2 U VCO variable capacitance diode MBK441 Marking code: U. Orientation of marking code as shown. Cathode side indicated by a bar. Fig , rs diode series resistance Cd diode capacitance C d ( 1V ) -C d ( 4V


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PDF M3D319 BB145 BB145 OD523 SC-79) MBK441 OD523; 125004/01/pp8 DIODE Sp marking code BP317 943 vco st smd diode marking code str 4090
2007 - BAL74

Abstract: BAR74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode · For high-speed switching applications · Pb-free (RoHS , BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 50 , - 4 ns Forward voltage IF = 100 mA AC Characteristics Diode capacitance VR = 0 V, f = 1 , . Reverse current IR = (TA) Forward Voltage VF = (TA) IF = Parameter VR = Parameter 10 5 BAR 74


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PDF BAL74/BAR74. BAL74 BAR74 BAL74 BAR74 BCW66
2007 - Not Available

Abstract: No abstract text available
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free ,  Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25° unless otherwise specified C, Parameter Symbol Diode reverse voltage , Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured , Parameter Reverse current IR = ƒ (TA) VR = Parameter 10 5 BAR 74 EHB00012 BAR 74 1.0 nA


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PDF BAL74/BAR74. BAL74 BAR74
2005 - BAL74

Abstract: MARKING SOT23 jbs BAR74 SOT23 BAL74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode · For high-speed switching applications BAL74 , Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 50 Peak reverse voltage VRM 50 Forward , Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured , ) IF = Parameter VR = Parameter 10 5 BAR 74 EHB00012 BAR 74 1.0 nA V R


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PDF BAL74/BAR74. BAL74 BAR74 BAL74, BAL74 MARKING SOT23 jbs BAR74 SOT23 BAL74 BCW66
2001 - Not Available

Abstract: No abstract text available
Text: Charge VDS = 10 V, VGS = 4.5 V ID = 7.4 A, 2.5 nC 3.1 nC Drain–Source Diode , gate charge for superior switching performance. • 7.4 A, 20 V. • Fast switching speed , ID Drain Current ± 7.4 A – Continuous (Note 1a) ±20 – Pulsed PD Power , RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS8425 NDS8425 13’’ 12mm 2500


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PDF NDS8425
1999 - BB145

Abstract: BP317
Text: capacitance diode MBK441 Marking code: U. Orientation of marking code as shown. Cathode side indicated , DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145 Low-voltage variable capacitance diode , technology variable capacitance diode in a SOD523 (SC-79) package. · C4: 3 pF; ratio: 2.1 · Low series , . TYP. MAX. UNIT rs diode series resistance Cd diode capacitance C d ( 1V , ; VR = 1 V - - 0.6 VR = 1 V; f = 1 MHz; see Figs 2 and 4 6.4 - 7.4 pF VR


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PDF M3D319 BB145 BB145 OD523 SC-79) MBK441 125004/02/pp8 BP317
marking CODE n3 6PIN

Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
Text: ) PNP Use 20 Marking Indication Zener diode and resistance built-in Transistor , ordering for products which are listed at the small signal transistor and diode data book, specify the type , classification TRBS08D Resistance built-in transistor, Diode ,BS08Dblank No. Standard No. 12 12 , TRBS08E Resistance built-in transistor, Diode ,BS08Eblank Direction of electrode in the reel. No , G:Ze1ATR (F)No. 12SC-59Micro type Standard No. Zener diode and resistance built-in transistor 1A


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PDF 2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
2005 - BAL74

Abstract: BAR74 sot23 marking code 74
Text: BAL74/BAR74. Silicon Switching Diode For high-speed switching applications BAL74 3 BAR74 3 1 2 1 2 Type BAL74 BAR74 Parameter Diode reverse voltage Peak reverse voltage , Symbol RthJS Value 50 50 250 4.5 370 150 -65 . 150 Value Marking JCs JBs Unit V mA A mW °C , voltage I F = 100 mA AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = , 2 Feb-03-2003 BAL74/BAR74. Reverse current IR = (TA ) VR = Parameter 10 5 nA BAR 74


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PDF BAL74/BAR74. BAL74 BAR74 BAL74 BAL74, BAR74 sot23 marking code 74
1999 - KV1812K

Abstract: No abstract text available
Text: pF 2.10 7.4 Note 1: Diode Capacitance measured with HP 4279A or equivalent instruments , KV1812K VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS s s s s s s s s s , = 7.4 ) Excellent Linearity (CV Curve) Very Small Capacitance Deviation at Tape/Reel , Communication Systems DESCRIPTION The KV1812K is a variable capacitance diode designed for UHF applications , Current Diode Capacitance 1 VREV = 1 V, f = 1 MHz C8 Diode Capacitance 8 VREV = 8 V, f = 1


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PDF KV1812K KV1812K afte375 IC-xxx-KV11812 0798O0
1999 - KV1812K

Abstract: toko product code V toko marking code
Text: KV1812K VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS s s s s s s s s s , = 7.4 ) Excellent Linearity (CV Curve) Very Small Capacitance Deviation at Tape/Reel , Communication Systems DESCRIPTION The KV1812K is a variable capacitance diode designed for UHF applications , TEST CONDITIONS V REV Reverse Voltage IREV = 10 µA IREV Reverse Current Diode Capacitance 1 V REV = 1 V, f = 1 MHz C8 Diode Capacitance 8 V REV = 8 V, f = 1 MHz RS Series


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PDF KV1812K KV1812K afte375 IC-xxx-KV11812 0798O0 toko product code V toko marking code
2008 - Not Available

Abstract: No abstract text available
Text: 0.027 VGS = 2.5 V, ID = 3.5 A Diode Forward Voltage a VDS = 10 V, ID = 7.4 A 37 VSD , S1 S1 3 D1 D2 G1 2.6 kΩ S2 5 S2 4 G2 2.6 kΩ G1 6 G2 Marking Code , Drain Current (VGS = 8 V) IS TA = 25 °C TA = 85 °C PD 7.4 7.7 5.3 80 2.9 1.6 , 10.7 IDM Continuous Diode Current ( Diode Conduction)a Maximum Power Dissipationa ID Unit , 4.5 V 40 A VGS = 4.5 V, ID = 7.4 A Drain-Source On-State Resistancea 0.019 0.016


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PDF SiF912EDZ SiF912EDZ-T1-GE3 08-Apr-05
Supplyframe Tracking Pixel