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LTC4403-2EMS Linear Technology LTC4403 - Multiband RF Power Controllers for EDGE/TDMA; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C
LTC4403-2EMS#TR Linear Technology LTC4403 - Multiband RF Power Controllers for EDGE/TDMA; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C
LTC4403-2EMS#TRPBF Linear Technology LTC4403 - Multiband RF Power Controllers for EDGE/TDMA; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C
LTC4403-2EMS#PBF Linear Technology LTC4403 - Multiband RF Power Controllers for EDGE/TDMA; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756

diode k275 4032 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - VARISTOR k275

Abstract: 07 k275 varistor k275 varistor U2008B equivalent 05 k275 capacitor k275 zener k275 k275 07 K275 T2D19
Text: through diode D5. During normal operation of the transformer, this prevents further triggering of the , integrated, antiparallel, freewheeling diode which, as has been shown, is absolutely necessary for all , angle = 0° is defined. The diode D7 is needed to ensure that the U2008B can be synchronized to the , diode D14 responds, starting pulses from T1 are shorted via T5 and soft starting after reduction of , 220 nF 250 V K275 G-ST-2 2 mH N 22 nF 250 V 2 x 2.2 nF 400 V 120 k Toroidal core


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PDF ANT011 U2008B VARISTOR k275 07 k275 varistor k275 varistor U2008B equivalent 05 k275 capacitor k275 zener k275 k275 07 K275 T2D19
APP4032

Abstract: conclusion of zener diode voltage report
Text: APPLICATION NOTE 4032 HFTA-16.0: ESD Protection for Bipolar Integrated Circuits Abstract: It is well known , the tester is 2kV, then the discharge current through the ESD diode (Figure 2) is about 1.33A: Figure 2. ESD diode current and voltage (measured data). The pin voltage during an HBM test is limited, theoretically, to a diode drop. Large currents create I-R drops in the ESD diode and connecting traces, thus , 8. Zener ESD protection diode . Page 7 of 8 Figure 9. Improved clamping with a Zener


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PDF HFTA-16 com/an4032 AN4032, APP4032, Appnote4032, APP4032 conclusion of zener diode voltage report
Not Available

Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Fiber-Coupled Diode Lasers cw, passively cooled with integrated TEC, new: 880 nm , applications • Long Lifetime > 20,000 h, high reliability Fiber-Coupled Diode Lasers cw, passively , screw ISO 4762), M4 (threaded bolt and hex nut ISO 4032 ) Non-condensing atmosphere > 20,000 h , Operation Conditions Expected Lifetime Cooling: Mounting Note Diode Laser Operating Temperature


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PDF JOLD-45-CPXF-1L JOLD-45-CPXF-1L,
2014 - 20/A4008ER

Abstract: 253/C25 02D CXA4008ER
Text: generation for MEMS drive ◆ 16bitDAC ◆ Photo Diode signal detection ◆ Trans Impedance Amplifier , Photo Diode Interface & ADC’s TIA INTEG VGA 16 HPZR_DATA VPZR_DATA 12bit ADC , 100 Ω 48 Photo Diode Input 49 ANALOG I/O 61 PD4_CAP+ ANALOG I/O 52 VSSA 51 VDDA 53 12.5 Ω 55 57 59 59 PD3_CAP+ 2 KΩ Photo Diode Signal Processing , 62 62 PD4_CAP- ANALOG I/O 54 12.5 Ω 56 Photo Diode Signal Processing


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PDF CXA4008ER CXA4008ER 12bitSAR-ADC 16bitSAR-ADC 16bitDAC CXA4007ER A4008ER 20/A4008ER 253/C25 02D
Not Available

Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Fiber-Coupled Diode Lasers cw & qcw, passively cooled with integr. TEC, new: 880 , Fiber-Coupled Diode Lasers cw & qcw, passively cooled with integrated TEC, new: 880 nm Specifications , hex nut ISO 4032 ) Non-condensing atmosphere > 20,000 h (constant current) > 1 GShot Fiber , : Mounting Note Diode Laser Operating Temperature Temperature Sensor Integrated TECs Maximum Cooling


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PDF JOLD-30-CPXF-1L JOLD-70-QPXF-1L JOLD-30-CPXF-1L,
2004 - 7489 logic diagram

Abstract: 4437 26860 4842* diode 74485 diode 7723
Text: for all 32 outputs. A low voltage silicon junction diode is made available to help monitor the die , /down sequences and add two external diodes as shown in the diagram below. The first diode is a high voltage diode across VPP and VDD where the anode of the diode is connected to VDD and the cathode of the diode is connected to Vpp. Any low current high voltage diode such as a 1N4004 will be adequate. The second diode is a schottky diode across VNN and DGND where the anode of the schottky diode is connected


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PDF HV257 32-Channel HV257 DSFP-HV257 A101804 7489 logic diagram 4437 26860 4842* diode 74485 diode 7723
2004 - rj45 Magnetics

Abstract: Americium-241 Th232 4032ZC Solar Charge Controller project Au1500 th228 Wifi amplifier extends complete diagram ORT42G5 ORSO42G5
Text: reconfiguration from on-chip family of FPGAs and the ispXPLD E2PROM through the 4032 CPLD. family of CPLDs , memory using the 4032 Circuit Description: The following CPLD through sysCONFIG port of application , (Please See Page 9) E2PROM memory. Upon power-on, the 4032 CPLD loads Instant-On ­ Fast SRAM , algorithm code stored in the server into the SDRAM. The details of using a 4032 to load code from Flash , signals to the 4032 CPLD to initiate the command to load the E2CMOS configuration. The 4032 will be the


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PDF 4000Z 4000Z, ORT42G5/ ORSO42G5 NL0107 rj45 Magnetics Americium-241 Th232 4032ZC Solar Charge Controller project Au1500 th228 Wifi amplifier extends complete diagram ORT42G5 ORSO42G5
Not Available

Abstract: No abstract text available
Text: SIEMENS SFH620A 5.3 kV TRIOS® OPTOCOUPLER AC VOLTAGE INPUT FEATURES • High Current Transfer Ratios at 10 mA: 40-32 0 % at 1 mA: 45% typical (>13) • Low CTR Degradation • Good CTR , capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, w hich , .) Collector current vs. collector-em itter voltage TA=25°C Figure 3. Diode forward voltage (typ.) vs , . < s: i. s ? r; Figure 7. Permissible diode forward current vs. am bient temp


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PDF SFH620A SFH6206
Not Available

Abstract: No abstract text available
Text: SIEMENS FEATURES · High Current Transfer Ratios at 10 mA: 40-32 0 % at 1 mA: 45% typical (>13) Low CTR Degradation Good CTR Linearity Depending on Forward Current Isolation Test Voltage, 5300 VACRMS , emitting diode emitter, which is optically coupled to a silicon planar phototransis tor detector, and is , . Diode forward voltage (typ.) vs. forward current ^ ^I Ilip ' ! ,V , f f j |F w L , : :-!i. : ; & 'V W -, % Figure 7. Permissible diode forward current vs. ambient tem p. SFH620A 5


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PDF SFH6206 SFH620A SFH620A
A155-01-01C

Abstract: CSA950 ZWS 100 E
Text: for 30 seconds. *8. Over voltage clamping by Zener Diode . *9. Refer to Instruction Manual. *10 , , FCC-ClassB, VCCI-B 270 55x26x133 ZWS 30-48 48 0 0.7 0.84 33.6 40.32 78 400 400 192 300


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PDF A155-01-01C A155-01-01C CSA950 ZWS 100 E
2004 - Schottky diode Die

Abstract: 74485 1N4004 1N5817 HV256 HV256FG HV256X
Text: external resistor value. The setting is common for all 32 outputs. A low voltage silicon junction diode , rejection ratio for VPP, VDD, and VNN -40 dB 2 A112304 HV256 Diode Symbol Parameter PIV Typ VF Forward diode drop Forward diode current TC VF temperature coefficient , below. The first diode is a high voltage diode across VPP and VDD where the anode of the diode is connected to VDD and the cathode of the diode is connected to Vpp. Any low current high voltage diode such


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PDF HV256 32-Channel switche04 100-LEAD DSPD-100MQFPFG A052104 Schottky diode Die 74485 1N4004 1N5817 HV256 HV256FG HV256X
CX28500

Abstract: 1 k ohm resistor CX28560 CX29503 MPC860 ACEX 1K100
Text: time slots (hence the limitation of 6 DS3s ­ 6 × 672 = 4032 ) that has the DS1s properly aligned. The , , for 6 DS3 lines, one would need 4032 channels to access each DS0. Therefore, some of the DS0s will , These pins were intended for attaching a temperature diode . This feature was not implemented, and


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PDF 500130B CX28500 CX28500 CX28500? 1 k ohm resistor CX28560 CX29503 MPC860 ACEX 1K100
beta transistor 2N2222

Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent 2N3391
Text: 40.32 2N5311 250-500 J 2N5418 40-120 > Higher power device with excellent beta linearity , Vce=2V, lc=10mA 17 SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS CHIP DRAWINGS Equivalent , current, fast switching diode designed primcirily for computer usage 2' 35.101 1N4454 M46P-X507 Similar


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PDF 2N2711 2N2712 2N2713 2N2714 150mA 2N2923 2N2924 2N2925 2N3976 M23P-XS16 beta transistor 2N2222 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent 2N3391
RX3408-LF

Abstract: RX3361 RX3408 FS8308 455KHZ MO-137 214MH
Text: range from 4032 to 262143 · 13-bit programmable reference frequency divider (including a ¸ 8 prescaler , DIODE D1 R14 C17 R10 R13 C20 MCU R8 R C16 To Audio Amp. R R C21 , total divide ratio range for the input divider is M = 4032 to 262143. Take N=10000 for example, since P , 4032 0 0 0 0 0 0 1 1 1 1 1 1 0 0 0 0 0 0 4033 0 0 0 0 0 0 1 1 1 1 1 1 0 0 0 0 0 1


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PDF RX3408 RX3408 18-bit MO-137 RX3408-LF RX3361 FS8308 455KHZ MO-137 214MH
2006 - 9935y

Abstract: 71rr
Text: common for all 32 outputs. A low voltage silicon junction diode is made available to help monitor the die , RSINK = 25K - 2 HV256 Temperature Diode Symbol PIV VF IF TC Parameter Peak inverse voltage Forward diode drop Forward diode current VF temperature coefficient Min Typ 0.6 -2.2 Max 5.0 100 , Power Up/Down Issues External Diode Protection The device can be damaged due to improper power up , external diodes as shown in the diagram on the right. The first diode is a high voltage diode across VPP


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PDF HV256 32-Channel VIN28 VIN29 VIN30 VIN31 HV256 100-Lead 9935y 71rr
2N2926 equivalent

Abstract: beta transistor 2N2222 2N3392 equivalent 2N3900A 2N3394 equivalent 2n3393 equivalent 2N3416 equivalent 2N3859A equivalent to PNP 2N5232A equivalent 2N3856A
Text: 100-300 * 50 .125 360 2 150 1 40.32 2N5311 250-500 J 2N5418 40-120 > Higher power device , DIODE CHIPS CHIP DRAWINGS Equivalent JEDEC Number GE Type Description Chip Dwg. Specification Sheet No , 1N4551 M87PX500 High current, fast switching diode designed primcirily for computer usage 2' 35.101


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PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3900A 2N3394 equivalent 2n3393 equivalent 2N3416 equivalent 2N3859A equivalent to PNP 2N5232A equivalent 2N3856A
2006 - BYP 250

Abstract: 74485 1N4004 1N5817 HV256 HV256FG HV256FG-G high voltage op-amp
Text: outputs. A low voltage silicon junction diode is made available to help monitor the die temperature , - - dB - PSRR 2 HV256 Temperature Diode Symbol Parameter Min Typ , VF Forward diode drop - 0.6 - V IF = 100µA, anode to cathode at TA = 25°C IF Forward diode current - - 100 µA anode to cathode TC VF temperature coefficient - , External Diode Protection Connection External Diode Protection The device can be damaged due to


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PDF HV256 32-Channel HV256 VIN25 VIN26 VIN27 100-Lead DSFP-HV256 BYP 250 74485 1N4004 1N5817 HV256FG HV256FG-G high voltage op-amp
1997 - VARISTOR k275

Abstract: K95 varistor S20 K275 varistor varistor s20 k275 "Surge Arresters" pspice siemens automotive relay dc 12v S20K275 sm 323 module Siemens varistor s20k275 k275 varistor
Text: operating voltage of 253 V can be expected. This means that only varistors of the voltage classes " K275 , , incorporating SIOV technology into a disk diode housing. The advantages of the construction translate into: ­ , telemetering line with a gas-filled surge arrester [1], a varistor and a suppressor diode *): The voltage of , suppressor diode , zener diode or filter [2] to less than 50 V. The series inductors or resistors are , Varistor Supressor diode Protected unit Figure 40 Principle of stepped protection with surge


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PDF
Not Available

Abstract: No abstract text available
Text: Voltage Input LO W Voltage Input C urrent Input Diode C lam p Voltage O utpu t Leakage C u rrent O utpu t , V oltage Input HIG H Voltage Input LO W Voltage Input C urrent Input Diode C lam p Voltage O utput , " - W \r R1 500£2 (658£2 MIL) 5VOOUTPUTOR2 333£2 ( 403£2 MIL) 5 pF : INCLUDINGJIG AND SCOPE (b ) H ig h Z Load R2 333£2 ( 403£2 MIL) 3.0V GND <_ 5 ns A 90% 10% 90% 10% <_ 5 ns U


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PDF CY7C266
maxim rs232 protection overvoltage

Abstract: 2.5V to 5.5V RS-232 Tranceivers j1708 convert to rs232 abstract and introduction rs 422 MAX1488E MAX13362 MAX16013 MAX3490 DIE MAX253 MAX3080
Text: 0.6V, so why does the data sheet say 0.3V? The answer is because at high temperatures the diode starts leaking significant current. The operation of diode to ground is generally obvious. The diode to VCC , higher voltage to connect, so a zener diode will protect this pin. The zener on Figure 1A is seen on , test or trim modes for automatic factory test. To enter this mode the pin can be pulled a diode drop , " Application note 4032 , "HFTA-16.0: ESD Protection for Bipolar Integrated Circuits" Application note 1167


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PDF articX6498 MAX6499 com/an4991 AN4991, APP4991, Appnote4991, maxim rs232 protection overvoltage 2.5V to 5.5V RS-232 Tranceivers j1708 convert to rs232 abstract and introduction rs 422 MAX1488E MAX13362 MAX16013 MAX3490 DIE MAX253 MAX3080
2003 - C1608X7R1H104KT

Abstract: K 2645 schematic circuit MMSZ5248BT1 RESISTOR AXIAL TSL1315S-101K2R5 C1608X7R1H104KT TDK transistor r29 on semiconductor FQP12N60 K 2645 schematic C3216X5R1A475KT
Text: MMSZ5248BT1 ON Semiconductor D1-D4 Description Diode , Rectifier, 600 V, 3.0 A D5 Diode , Zener, 18 V, Axial Lead D6 Diode , Signal, 75 V, 200 mA, SOT-23 D7 Diode , Ultra-Fast, 600 V , 103.2 103.7 Vo 403.2 404.3 404.9 405 Io 0.246 0.246 0.243 0.244


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PDF AND8106/D NCP1650. C1608X7R1H104KT K 2645 schematic circuit MMSZ5248BT1 RESISTOR AXIAL TSL1315S-101K2R5 C1608X7R1H104KT TDK transistor r29 on semiconductor FQP12N60 K 2645 schematic C3216X5R1A475KT
2011 - CREE XM-L T6

Abstract: No abstract text available
Text: Vishay Vishay RECT BRIDGE GP 200V 0.8A MINIDIP DIODE ULTRA FAST 1A 600V DO-41 MOSFET N-CH 400V 5.4A , Vishay Vishay Vishay Vishay Vishay Vishay RECT BRIDGE GP 200V 0.8A MINIDIP DIODE ULTRA FAST 1A , ) IRMS (mA) 34.45 35.32 PIN (W) PFC 4.032 4.125 0.969 0.966 VLED (V) 41.35


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PDF AL9910EV8 120VAC 120VAC; 8V/90mA) 6V/45mA) AL9910EV8 120VAC AL9910 AL9910-EV8 CREE XM-L T6
N20X DIODE

Abstract: A35355 ta8872 TA8923 ta8903 TA8782 ta7833 transistor 123 TA7811 ta8825
Text: 175C BAKE 1344 HOURS TEMP CYCLE 2016 CYCLES TEMP CYCLE 4032 CYCLES TP11 Figure 1 , issues. These might be inter-metal bridging or intra-metal shorts, diode leakages, or gate oxide , diode leakages, · gate oxide integrity, · plasma charging, · contact and via integrity , , Triple Level Metal, Fab 10 Fab 10 C3 Wafer Level Reliability Results Bridging 5.0 V Diode Leakage , ) Volts minimum length Barrier Integrity % Defective n+ Diode p+ Diode Median ( ) 10.8


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PDF 100LPQFP 160LPQFP 28LSOIC N20X DIODE A35355 ta8872 TA8923 ta8903 TA8782 ta7833 transistor 123 TA7811 ta8825
diode PJ 65 MG

Abstract: 5a 12v regula
Text: 4032 3 FSL230D, FSL230R Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified Drain to , (Body D iode). Pulsed Source Current (Body Diode , to Drain Diode Specifications PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD W ISD = 5A


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PDF 460i2 FSL230D, FSL230R MIL-STD-750, MIL-S-19500, 500ms; diode PJ 65 MG 5a 12v regula
2003 - T3D 66 diode

Abstract: KAI-11000M KAI-11000 NSPG500S NLPB500 KAI-11000CM T3D 91 JESD22 HLMP-8115 1000X
Text: 4032 (H) x 2688 (V) = approx. 10.8M Number of Active Pixels 4008 (H) x 2672 (V) = approx. 10.7M , 4032 photosensitive pixels and finally 20 more light shielded pixels 6 KAI-11000 Rev 3.0 , diode p p+ n Light Shield V1 p n p Light Shield Transfer Gate p V2 p+ n , Vertical to Horizontal Transfer Direction of Vertical Charge Transfer Top View V1 Photo diode , photodiodes. The next 4032 clock cycles will contain photo-electrons (image data). Finally, the last 20


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PDF KAI-11000M KAI-11000CM KAI-11000 T3D 66 diode KAI-11000M NSPG500S NLPB500 KAI-11000CM T3D 91 JESD22 HLMP-8115 1000X
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