The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358CDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode gp 537 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
t4940

Abstract:
Text: amplifier, and a built-in C V« n EToROUHO PP-38, p. 16-35 reverse bias protection diode guards the , 50°C To = -55° to +85°C BW Frequency Range 500-450Ô 1000-4000 1000-4000 MHz GP Small Signai , .519 . 537 .490 .408 .333 .297 .200 .122 .131 .207 .304 Avtntik. [ne. . 401 Cottonwood Driva, Mllpltai


OCR Scan
PDF PPA-4132 PPA-4132 PP-38, t4940 TRANSISTOR C 5387 16298 AVANTEK Avantek Amplifier Avantek rf amplifier AVANTEK transistor t-74-13-01
2006 - TRANSISTOR D 1785

Abstract:
Text: power gain: Pout>5.5W, Gp >8.9dB@Vdd=7.2V,f=941MHz ·High Efficiency: 43%min. (941MHz) ·No gate protection diode 6.2+/-0.2 (3.6) 8.0+/-0.2 FEATURES (b) (b) 0.65+/-0.2 DESCRIPTION , CHARACTERISTICS @f=941MHz 80 20 20 40 Gp Pout(W) , Idd(A) 15 60 30 d(%) Po(dBm) , Gp (dB) , Idd(A) Ta=25°C f=941MHz Vdd=7.2V Idq=1.0A 80 Po 10 30 20 5 Idd 0 , ) 85.7 81.9 78.9 77.5 76.1 73.8 71.1 69.0 67.4 66.0 64.1 62.2 60.0 58.5 57.1 55.6 53.7


Original
PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) TRANSISTOR D 1785 diode GP 829 transistor 3669 6030D TRANSISTOR D 1765 720 transistor D 1762 than85 Diode GP 622 diode 6.2
LT 8224 diode

Abstract:
Text: DESCRIPTION reverse bias protection diode guards the amplifier at the bias input. The bias input voltage , noted) Guaranteed Specifications Typical Te = 25°C Symbol Characteristic BW GP — NF , .192 ,155 .100 .080 ,196 .346 .463 .519 , 537 .490 .408 ,333 ,297 .200 .122 .131 ,207


OCR Scan
PDF PPA-4132 PP-38, PPA-4132 Inp61 SS035 LT 8224 diode DIODE LT 6202 LT 8224 LT 8224 TRANSISTOR
VEE25

Abstract:
Text: . GP -018A FUNCTIONAL BLOCK DIAGRAM ('A' & 'LW Package Shown) I ! 1 I I I t B-BH. SERIAl-MRALLEL , Clamp Diode Leakage Current 'r UCN5841 VR = 50V — 50 , mA UCN5842 VR = 80 V — 50 mA UCN5843 VR = 100V — 50 |iA Clamp Diode Forward Voltage vF ALL lF - 350 mA — 2.0 V " Complete part number , INC blE » ■0S0433Ô GGGbGSS 537 «ALGR 5841 turd 5843 BiMOS II 8-BIT SERIAL-INPUT, LATCHED


OCR Scan
PDF UCN5841A UCN5843A UCN5841A/LW) UCN5842A/LW) UCN5843A/LW) V-15V VEE25 allegro 5841 UCN5840A UCN5840LW UCN5841ALW UCN5842LW UCN5843A
2010 - Not Available

Abstract:
Text: Output Audio CODEC I/O Power PFC Power Management Diode CPU/GPU Power Power Switch AC/DC (Greenchip) I/O Power PFC Diode Audio Input Challenges for today’s aerospace and , Diode AC/DC (Greenchip) I/O Power PFC Diode lighter and much more reliable. Our SiGe:C , /DC (Greenchip) I/O Power PFC Diode I/O Power PFC Diode Operational Operational Control , 1215 960 - 1215 1030 - 1090 1030 - 1090 PL (av) W 25 (min) 250 450 600 200 ηD Gp


Original
PDF JESD204A
2010 - Circuit diagram of 12v 10w LED driver

Abstract:
Text: 250VAC X1Y1 RAD TDK Corporation CD12-E2GA222MYNS D1 DIODE TVS 150V 600W UNI 5% SMB Littlefuse SMAJ120A D2 RECT BRIDGE GP 600V 0.5A MINIDIP Diodes Inc. RH06-T D3 DIODE RECT GP 1A 1000V MINI-SMA Comchip Technology CGRM4007-G D4 DIODE SCHOTTKY 100V 1A SMA ST Microelectronics STPS1H100A D5 DIODE ZENER 30V 1.5W SMA ON Semiconductor 1SMA5936BT3G D7 DIODE ZENER 12V 200MW Fairchild Semiconductor MM5Z12V D8 DIODE SWITCH 200V 200MW Diode Inc


Original
PDF LM3444 AN-2082 Circuit diagram of 12v 10w LED driver Led driver 10W schematic 10w led driver diode gp 934 smd diode 819 diode GP 829 2082 zener off line flyback led drive circuit flyback pfc using constant on-time GP 828 diode
1995 - A6044

Abstract:
Text: reverse bias protection diode guards the amplifier at the bias input. The bias input voltage is , Specifications (Measured in 50 Ω system @ +8 VDC nominal unless otherwise noted) Symbol BW GP — NF , .218 .224 .212 .192 .155 .100 .080 .196 .346 .463 .519 . 537 .490 .408 .333 .297 .200


Original
PDF PPA-4132 PPA-4132 PP-38 5963-3232E. 5963-2595E A6044
diode gp 537

Abstract:
Text: Amplification PP -38, p. 1 6 -3 5 reverse bias protection diode guards the amplifier at the bias input. Th , . ELECTRICAL SPECIFICATIONS Sym bol BW GP - NF P i dB -IP» IPZ hp2 Id C h aracteristic (Measured in a , . 537 .490 .408 .333 .297 .200 .122 .131 .207 .304 S 22 Ang 147.67 117.88 117.57 116.64 104.64 82.24


OCR Scan
PDF
2005 - DPDT relay 12v

Abstract:
Text: $7.90 RH1V2-UD-DC12V RH GP Rly SPDT 10A 12V DC Coil w/ diode 10 0 $9.90 RH1V2-UD-DC24V RH GP Rly SPDT 10A 24V DC Coil w/ diode 10 0 $9.90 RH1V2-ULCDC24V GP Rly 10A SPDT w , 0 $10.28 RH1V2-ULD-DC12V RH GP Rly SPDT 10A 12V DC Coil w/ diode & Indctr Lght 10 0 $12.28 RH1V2-ULD-DC24V RH GP Rly SPDT 10A 24V DC Coil w/ diode & Indctr Lght 10 0 $12.28 , Light CB Diode 10 0 $13.98 RH2B-ULCD-DC24V RH2B-ULCD-DC24V RH GP Rly DPDT 10A with Light


Original
PDF U908-0 RH4B-UD-DC48V RH4B-ULAC120V RH4B-ULAC120V RH4B-ULAC12V RH4B-ULAC12V RH4B-ULAC240V RH4B-ULAC240V RH4B-ULAC24V RH4B-ULAC24V DPDT relay 12v 12V 10A RELAY relay 240v 10a pcb RH2B-UDC12V RH2B-ULAC24V rh2lb-u RH2LB-U-DC24 RH3B-UTAC120V U908
2009 - Zener diode smd marking h5

Abstract:
Text: HL KF PZU4.3 G9 F8 H6 HS PZU16 GP FN HM KG PZU4.7 GA F9 , 4.69 4.90 B 4.84 5.37 B1 4.84 5.04 B2 4.98 5.20 B3 5.14 5.37 B 5.31 , Temperature Diode coefficient capacitance SZ (mV/K); Cd (pF)[1] IZ = 5 mA 2.9 B B1 2.80 3.3 , ) 6.2 B Temperature Diode coefficient capacitance SZ (mV/K); Cd (pF)[1] IZ = 5 mA , Diode coefficient capacitance SZ (mV/K); Cd (pF)[1] IZ = 5 mA Non-repetitive peak reverse


Original
PDF OD323F OD323F SC-90) Zener diode smd marking h5 NXP SMD ZENER DIODE MARKING CODE g3 Diode KD 514 SMD ZENER DIODE MARKING CODE G3 NXP SMD ZENER DIODE MARKING CODE f6 h8 diode zener marking code gc SMD zener smd marking KD SMD MARKING g5 SOD323F footprint
2006 - SMD ZENER DIODE MARKING CODE G3

Abstract:
Text: - PZU15 GN FM HL KF PZU4.3 G9 F8 H6 HS PZU16 GP FN HM , ) Temperature Diode Non-repetitive peak coefficient capacitance reverse current SZ (mV/K); Cd (pF)[1] IZSM , B1 4.42 4.90 B 5.37 5.04 B2 4.98 5.20 B3 5.14 5.6 4.84 B1 4.84 5.37 B , 12.47 13.03 B2 12.91 13.49 B3 13.37 14 Temperature Diode Non-repetitive peak , = 1 MHz; VR = 0 V [2] Temperature Diode Non-repetitive peak coefficient capacitance reverse


Original
PDF OD323F OD323F SC-90) SMD ZENER DIODE MARKING CODE G3 marking code gc SMD zener pzuxb PZU11 zener diode SMD marking code 27 4B SMD MARKING GP 728 smd marking KD zener smd marking GA PZU10 gw 340
2010 - GRM39

Abstract:
Text: power gain: Pout>5.5W, Gp >8.9dB@Vdd=7.2V,f=941MHz ·High Efficiency: 43%min. (941MHz) ·No gate protection diode 6.2+/-0.2 (3.6) 8.0+/-0.2 FEATURES (b) (b) 0.65+/-0.2 DESCRIPTION , @f=941MHz 80 20 80 Po 15 20 40 Pout(W) , Idd(A) 60 30 d(%) Po(dBm) , Gp (dB) , Idd(A) 40 Ta=25°C f=941MHz Vdd=7.2V Idq=1.0A Gp 10 30 20 5 Idd 0 5 , 81.9 78.9 77.5 76.1 73.8 71.1 69.0 67.4 66.0 64.1 62.2 60.0 58.5 57.1 55.6 53.7 52.1


Original
PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) GRM39 6030D diode GP 829 GRM708
2011 - Not Available

Abstract:
Text: [Gate] (c) TOP VIEW Pout>5.5W, Gp >8.9dB@Vdd=7.2V,f=941MHz •No gate protection diode , @f=941MHz 20 60 20 40 Gp 10 Pout(W) , Idd(A) 15 30 d(%) Po(dBm) , Gp (dB) , Idd , 71.1 69.0 67.4 66.0 64.1 62.2 60.0 58.5 57.1 55.6 53.7 52.1 50.6 49.4 48.2 46.6 45.1


Original
PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz)
2011 - MARK "326" FET

Abstract:
Text: (b) 7.0+/-0.2 6.2+/-0.2 (d) FEATURES ·High power gain: Pout>5.5W, Gp >8.9dB@Vdd=7.2V,f=941MHz ·No gate protection diode 0.7+/-0.1 4.2+/-0.2 5.6+/-0.2 (3.6) (4.5) 0.95+/-0.2 2.6 , TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=941MHz 20 40 Po(dBm) , Gp (dB) , Idd(A) Ta=+25°C f , 80 15 Pout(W) , Idd(A) 70 60 50 30 60 d(%) 20 Gp 40 10 Po 40 30 10 , S21 (ang) 85.7 81.9 78.9 77.5 76.1 73.8 71.1 69.0 67.4 66.0 64.1 62.2 60.0 58.5 57.1 55.6 53.7 52.1


Original
PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) 05Electric Oct2011 MARK "326" FET transistor 3669
2009 - grm708

Abstract:
Text: power gain: Pout>5.5W, Gp >8.9dB@Vdd=7.2V,f=941MHz ·High Efficiency: 43%min. (941MHz) ·No gate protection diode 6.2+/-0.2 (3.6) 8.0+/-0.2 FEATURES (b) (b) 0.65+/-0.2 DESCRIPTION , 20 40 Gp Pout(W) , Idd(A) 15 60 30 d(%) Po(dBm) , Gp (dB) , Idd(A) Ta=25°C f , 67.4 66.0 64.1 62.2 60.0 58.5 57.1 55.6 53.7 52.1 50.6 49.4 48.2 46.6 45.1 43.8 43.0


Original
PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) grm708 transistor 5024 diode gp 537 Diode GP 622 Diode GP 641 diode GP 829 GRM39
1500w audio amplifier circuit

Abstract:
Text: 3000 BAS16DXV6T1 A SS SOT563 DUAL SWCH DIODE 2 4000 .08 4000 BAS16DXV6T5 A SS SOT563 DUAL SWCH DIODE 2 8000 .08 8000 BAS16HT1 A SS SOD323 SWCH DIO 75V 2 3000 , SWCH DIO 75V TR 2 3000 .0467 3000 BAS16XV2T1 A SS SWITCHING DIODE SOD523 2 3000 , SOT23 SHKY ANO DIODE 2 10000 .128 10000 BAT54AWT1 A SS SC-70 SHKY DIO 30V TR 2 , SHKY DIO 30V TR 2 3000 .153 3000 BAT54XV2T1 A SCHOTTKY DIODE SOD523 2 3000


Original
PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr MJE350G
2010 - GP 819

Abstract:
Text: applications. DESCRIPTION (3.6) (d) FEATURES ·High power gain: Pout>5.5W, Gp >8.9dB@Vdd=7.2V,f=941MHz ·High Efficiency: 43%min. (941MHz) ·No gate protection diode INDEX MARK [Gate] (4.5) 0.95+/-0.2 , 40 Po(dBm) , Gp (dB) , Idd(A) Ta=+25°C f=941MHz Vdd=7.2V Idq=1.0A Po 80 15 Pout(W) , Idd(A) 60 d(%) 70 60 50 30 20 Gp 40 10 Po 40 30 10 20 5 Idd 20 10 0 1.5 0 5 10 , 81.9 78.9 77.5 76.1 73.8 71.1 69.0 67.4 66.0 64.1 62.2 60.0 58.5 57.1 55.6 53.7 52.1 50.6 49.4 48.2


Original
PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) GP 819
CS5170

Abstract:
Text: SWCH DIODE 2 4000 .08 4000 BAS16DXV6T5 A SS SOT563 DUAL SWCH DIODE 2 8000 , BAS16WT1G A SS SC70 SWCH DIO 75V TR 2 3000 .0467 3000 K BAS16XV2T1 A SS SWITCHING DIODE , SS SOT23 SHKY DIO 30V TR 2 3000 .128 3000 BAT54ALT3 A SS SOT23 SHKY ANO DIODE 2 , TR 2 3000 .153 3000 K BAT54XV2T1 A SCHOTTKY DIODE SOD523 2 3000 .0533 , DUAL DIO 70V TR 2 3000 .06 3000 K BAV70DXV6T1 A SS SOT563 SWITCH DIODE 2 4000


Original
PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL CS5170 MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE DIODE SWCH 100V SS SOT23 TR NCP1200AP60 znr SF 471 SPEED CONTROL of DC MOTOR tda1085c
2000 - 4 pin hall effect AC CURRENT

Abstract:
Text: /29/00 1 205 Crawford Street · Leominster MA 01453 · Phone: 978 534 5776 · Fax: 978 537 4246 · , Street · Leominster MA 01453 · Phone: 978 534 5776 · Fax: 978 537 4246 · www.omnirel.com PRELIMINARY , Leominster MA 01453 · Phone: 978 534 5776 · Fax: 978 537 4246 · www.omnirel.com PRELIMINARY OM9399SP , Current IGBT c-e Saturation Voltage Ices Vce(sat) Vge = 15V Diode Leakage Current Ir Vr = 600Vdc 100 µA Diode Forward Voltage Diode Reverse Recovery Time Vf trr If = 37A


Original
PDF OM9399SP RS-232 OM9399SP 4 pin hall effect AC CURRENT Hall-Effect-Sensor Hall effect sensor 3 terminal hall effect sensor hall effect position sensor motor Hall-Effect-Sensor for speed sensing synchronous motor 100A 3 phase ac motor control with dsp hall effect sensor 4 pin ic 3 pin hall effect sensor
MMBD2104

Abstract:
Text: mosfet 30V 0.9A 2N2222 2N2222 2N2222 2N2222 dual cc GP RF pin diode MPSA20 MPS3904 p-ch mosfet 20V 0.6A , SOT346 SOT23 SOT23R SOT23 SOT89 SOT89 SOT23 SOT23 dual series GP RF pin diode MBD101 schottky diode , have a single coloured letter (usually on extremely small diode packages). Colour, if significant, is , for a rectifier diode is usually the maximum PIV (peak inverse voltage) of the diode , but for a zener diode the operating (zener voltage) will be given. Normally, where a voltage, current or power is


Original
PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor ZENER DIODE t2d MMBD2103 T2D DIODE 3w mmbf4932 2n2222 as equivalent for bfr96 NDS358N
2000 - 4 pin hall effect AC CURRENT

Abstract:
Text: Street · Leominster MA 01453 · Phone: 978 534 5776 · Fax: 978 537 4246 · www.omnirel.com PRELIMINARY , · Phone: 978 534 5776 · Fax: 978 537 4246 · www.omnirel.com PRELIMINARY OM9391SP ABSOLUTE , Leominster MA 01453 · Phone: 978 534 5776 · Fax: 978 537 4246 · www.omnirel.com PRELIMINARY OM9391SP , Current IGBT c-e Saturation Voltage Ices Vce(sat) Vge = 15V Diode Leakage Current Ir Vr = 600Vdc 100 µA Diode Forward Voltage Diode Reverse Recovery Time Vf trr If = 37A


Original
PDF OM9391SP RS-232 OM9391SP 4 pin hall effect AC CURRENT 3 PIN hall effect sensor hall effect sensor 4 pin ic Hall-Effect-Sensor "Hall Effect Sensor" 4 pin 2-phase hall effect driver 3 terminal hall effect sensor speed control motor synchronous single phase Ir sensor pin details
1999 - M63826GP

Abstract:
Text: M63826P/FP/ GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED , > M63826P/FP/ GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE Duty Cycle-Collector , MITSUBISHI SEMICONDUCTOR M63826P/FP/ GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63826P, M63826FP and M63826GP are seven-circuit Darlington , has been newly expanded with the addition of 225mil ( GP ) package. M63826P and M63826FP have the same


Original
PDF M63826P/FP/GP 500mA M63826P, M63826FP M63826GP 225mil M63826P M54526P M54526FP. gP DIODE M54526FP M63826
1999 - M54523FP

Abstract:
Text: > M63823P/FP/ GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS , MITSUBISHI SEMICONDUCTOR M63823P/FP/ GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63823P, M63823FP and M63823GP are seven-circuit Darlington , has been newly expanded with the addition of 225mil ( GP ) package. M63823P and M63823FP have the same , ) Package type 16P2S-A( GP ) FEATURES q Three package configurations (P, FP and GP ) q Pin connection


Original
PDF M63823P/FP/GP 500mA M63823P, M63823FP M63823GP 225mil M63823P M54523P M54523FP. M54523FP
1999 - M63826GP

Abstract:
Text: POWEREX M63826P/FP/ GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE , > POWEREX M63826P/FP/ GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL , POWEREX MITSUBISHI SEMICONDUCTOR M63826P/FP/ GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63826P, M63826FP and M63826GP are seven-circuit Darlington , has been newly expanded with the addition of 225mil ( GP ) package. M63826P and M63826FP have the same


Original
PDF M63826P/FP/GP 500mA M63826P, M63826FP M63826GP 225mil M63826P M54526P M54526FP. M54526FP
2003 - Not Available

Abstract:
Text: 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 HIGH VOLTAGE DIODE RECTIFIERS MECHANICAL , capacitive loads, derate current by 20%. PARAMETER (TEST CONDITIONS) RATINGS SYMBOL UNITS GP 1150 Series Number GP 1180 GP 1200 GP 1250 GP 1300 GP 1400 GP 1500 GP , VOLTAGE DIODE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES GP1150 - GP1600 1.2 50 1.0 , GP1250-1400 GP1 150 100 -120 0 GP 150 0-1 o 600 TJ = 25 C Non-repetitive


Original
PDF HVGP-1000-1C DO-41 GP1120 GP1500 DO-41 GP1250-1400 97bhvgp100
Supplyframe Tracking Pixel