The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CUZ30V CUZ30V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC
CUZ20V CUZ20V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC
CEZ6V2 CEZ6V2 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC
CUZ6V8 CUZ6V8 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC
CUZ12V CUZ12V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC
MUZ5V6 MUZ5V6 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM

diode d92 02 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - 9R340C

Abstract: d92 02 diode d92 02 d92 02 diode diode d92 diode d92-02
Text: GS=f(Q gate); I D=9.2 A pulsed parameter: V DD 10 10 Forward characteristics of reverse diode I F=f , diode forward current Diode pulse current 2) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.2 34 4 Unit A 4) Reverse diode d v /d t V/ns Parameter Symbol Conditions min , current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=9.2 A, T j=25 °C V GS=10 V, I D=9.2 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 900 2.5 3 3.5 2 µA V -


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PDF IPI90R340C3 PG-TO262 9R340C 9R340C d92 02 diode d92 02 d92 02 diode diode d92 diode d92-02
2008 - 9r340

Abstract: No abstract text available
Text: . gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=9.2 A pulsed I F=f , J=25 °C, unless otherwise specified Parameter Continuous diode forward current IS Value Symbol Conditions Diode pulse current 2) 4) Reverse diode dv /dt Parameter Unit 9.2 , , V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.2 A, T j=25 °C - 0.28 0.34 Ω V GS=10 V, I D=9.2 A, T j=150 °C - 0.76 -


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PDF IPP90R340C3 PG-TO220 9R340C 9r340
2008 - 9R340C

Abstract: smd d92 d92 02 diode IPB90R340C3 d92 02 d92 diode 9r34 smd transistor DF QG ipb90r
Text: Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv /dt 4) Symbol IS I S , current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=9.2 A, T j=25 °C V GS=10 V, I D=9.2 A, T j=150 °C Gate resistance Rev. 2.0 RG f =1 MHz, open drain page 2 900 2.5 3 , Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery , plateau V DD=400 V, I D=9.2 A, V GS=0 to 10 V - 11 41 94 4.6 - nC V V SD t rr Q rr I rrm


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PDF IPB90R340C3 PG-TO263 IPB90R340C3 PG-TO263 9R340C 9R340C smd d92 d92 02 diode d92 02 d92 diode 9r34 smd transistor DF QG ipb90r
2008 - 9R340C

Abstract: IPP90R340C3 d92 02 diode d92 02 d92 02 diode D92 - 02 JESD22 9r340
Text: V DD=400 V, I D=9.2 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD , specified Parameter Continuous diode forward current IS Value Symbol Conditions Diode pulse current 2) Reverse diode dv /dt 4) Parameter I S,pulse Unit 9.2 T C=25 °C A , resistance R DS(on) V GS=10 V, I D=9.2 A, T j=25 °C - 0.28 0.34 V GS=10 V, I D=9.2 A , J=25 °C parameter: D=t p/T parameter: V GS 100 50 10 V 8V 40 6V 30 0.2


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PDF IPP90R340C3 PG-TO220 9R340C 9R340C IPP90R340C3 d92 02 diode d92 02 d92 02 diode D92 - 02 JESD22 9r340
2008 - 9r340c

Abstract: No abstract text available
Text: charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=9.2 A pulsed I F=f(V SD , diode forward current IS Value Symbol Conditions Diode pulse current 2) 4) Reverse diode dv /dt Parameter Unit 9.2 A T C=25 °C I S,pulse 34 dv /dt 4 V/ns , =10 V, I D=9.2 A, T j=25 °C - 0.28 0.34 Ω V GS=10 V, I D=9.2 A, T j=150 °C - , , V GS=10 V, I D=9.2A, R G=23.1 Ω ns Gate Charge Characteristics V DD=400 V, I D=9.2 A, V


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PDF IPI90R340C3 PG-TO262 9R340C 9r340c
2008 - 9R340C

Abstract: d92 02 diode d92 02 diode d92 02 IPW90R340C3 D92 - 02 9r340 JESD22 d92- 02 diode d92
Text: =23.1 ns Gate Charge Characteristics V DD=400 V, I D=9.2 A, V GS=0 to 10 V nC Reverse Diode , characteristics of reverse diode V GS=f(Q gate); I D=9.2 A pulsed I F=f(V SD) parameter: V DD , =25 °C, unless otherwise specified Parameter Continuous diode forward current IS Value Symbol Conditions Diode pulse current 2) Reverse diode dv /dt 4) Parameter I S,pulse Unit , 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.2 A, T j=25 °C -


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PDF IPW90R340C3 PG-TO247 9R340C 9R340C d92 02 diode d92 02 diode d92 02 IPW90R340C3 D92 - 02 9r340 JESD22 d92- 02 diode d92
2006 - 9R340C

Abstract: d92 02 D92 - 02 d92 02 diode 9r34
Text: GS=f(Q gate); I D=9.2 A pulsed parameter: V DD 10 10 Forward characteristics of reverse diode I F=f , Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode , Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=9.2 A, T j=25 °C V GS=10 V, I D=9.2 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 900 2.5 3 3.5 , Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode


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PDF IPW90R340C3 PG-TO247 9R340C 9R340C d92 02 D92 - 02 d92 02 diode 9r34
2008 - 9R340C

Abstract: d92 02 d92 02 diode 9r34 9r340 IPW90R340C3 JESD22 diode d92 02 D92 - 02
Text: =23.1 ns Gate Charge Characteristics V DD=400 V, I D=9.2 A, V GS=0 to 10 V nC Reverse Diode , Forward characteristics of reverse diode V GS=f(Q gate); I D=9.2 A pulsed I F=f(V SD) parameter , Parameter Continuous diode forward current IS Value Symbol Conditions Diode pulse current 2) Reverse diode dv /dt 4) Parameter I S,pulse Unit 9.2 T C=25 °C A 34 dv /dt 4 , , I D=9.2 A, T j=25 °C - 0.28 0.34 V GS=10 V, I D=9.2 A, T j=150 °C - 0.76


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PDF IPW90R340C3 PG-TO247 9R340C 009-134-A O-247 PG-TO247-3 9R340C d92 02 d92 02 diode 9r34 9r340 IPW90R340C3 JESD22 diode d92 02 D92 - 02
2008 - 9R340C

Abstract: d92 02 diode d92 02 diode d92 02 diode d92 IPI90R340C3 JESD22 9r340
Text: characteristics of reverse diode V GS=f(Q gate); I D=9.2 A pulsed I F=f(V SD) parameter: V DD , IPI90R340C3 Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous diode forward current IS Value Symbol Conditions Diode pulse current 2) Reverse diode dv /dt 4 , =0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.2 A, T j=25 °C - 0.28 0.34 V GS=10 V, I D=9.2 A, T j=150 °C - 0.76 - f =1 MHz


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PDF IPI90R340C3 PG-TO262 9R340C 9R340C d92 02 diode d92 02 diode d92 02 diode d92 IPI90R340C3 JESD22 9r340
2008 - Not Available

Abstract: No abstract text available
Text: . gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=9.2 A pulsed I F=f , =25 °C, unless otherwise specified Value Parameter Symbol Conditions Unit Continuous diode forward current 2) IS Diode pulse current 3) I S,pulse 34 Reverse diode dv /dt 5) dv /dt , , V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.2 A, T j=25 °C - 0.28 0.34 Ω V GS=10 V, I D=9.2 A, T j=150 °C - 0.76 -


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PDF IPA90R340C3 PG-TO220 9R340C
2008 - d92 02

Abstract: FA-400 diode d92 02 9R340C d92 02 diode
Text: GS=f(Q gate); I D=9.2 A pulsed parameter: V DD 10 10 Forward characteristics of reverse diode I F=f , Parameter Continuous diode forward current Diode pulse current 2) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.2 34 4 Unit A 4) Reverse diode d v /d t V/ns Parameter Symbol , Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=9.2 A, T j=25 °C V GS=10 V, I D=9.2 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 900 2.5 3 3.5


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PDF IPP90R340C3 PG-TO220 9R340C d92 02 FA-400 diode d92 02 9R340C d92 02 diode
2006 - d92 02

Abstract: d92 02 diode 9r340
Text: diode forward current Diode pulse current 2) Symbol Conditions IS I S,pulse T C=25 °C Value 9.2 2 Unit A , =20 V, V DS=0 V V GS=10 V, I D=9.2 A, T j=25 °C V GS=10 V, I D=9.2 A, T j=150 °C Gate resistance RG f =1 , Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery , =400 V, V GS=10 V, I D=9.2A, R G=tbd 280 tbd tbd tbd tbd ns Q gs Q gd Qg V plateau V DD=400 V, I D=9.2 , 8V 40 0.5 6V 5.5 V Z thJC [K/W] 0.2 30 10-1 0.1 I D [A] 20 0.05 0.02 0.01


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PDF IPP90R340C3 PG-TO220 9R340C d92 02 d92 02 diode 9r340
2008 - d92 02 diode

Abstract: 9R340C diode d92 02 d92 02 D92 - 02 9r340 9r34 d92 diode IPA90R340C3 JESD22
Text: Forward characteristics of reverse diode V GS=f(Q gate); I D=9.2 A pulsed I F=f(V SD) parameter , Continuous diode forward current 2) IS Diode pulse current 3) I S,pulse Reverse diode dv /dt 5 , , I D=9.2 A, T j=25 °C - 0.28 0.34 V GS=10 V, I D=9.2 A, T j=150 °C - 0.76 , , V GS=10 V, I D=9.2A, R G=23.1 ns Gate Charge Characteristics V DD=400 V, I D=9.2 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time V GS=0 V, I


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PDF IPA90R340C3 PG-TO220 9R340C d92 02 diode 9R340C diode d92 02 d92 02 D92 - 02 9r340 9r34 d92 diode IPA90R340C3 JESD22
diode dual d92

Abstract: KD621220
Text: Transistors with each transistor having a reverse parallel connected high-speed diode . Features: □ Isolated Mounting □ Planar Chips □ Discrete Fast Recovery Feedback Diode □ High Gain (hFE) â , Amperes Diode Forward Current 'fm 200 Amperes Continuous Base Current iß 10 Amperes Diode Surge , Gain hFE Ic = 200AiVce = 5V 75 - - - Diode Forward Voltage VFM >FM = 200A - - 1.8 Volts , Thermal Resistance, Junction-to-Case R0q.C) Diode Part - - 0.35 °c/w D-90 Powerex, Inc., 200 Hillis


OCR Scan
PDF KD621220 Amperes/1200 diode dual d92 KD621220
D83-004

Abstract: D92-02 d83 004 d83-004 diode d92 02 diode D83 d83004 diode D83 004 diode d92-02 SG6105
Text: 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 Institute by Page Number Diode D83-004(To-3P) Transister 2SC2625(TO-3P;NPN) Diode SF163 or D92-02 (TO-3P) Transister BD140(TO , 472P/250V Diode FR157(1.5A/600V) Zener Diode 12V_1/2W 5 Note Doc.Title Doc.Number 28 29 , D19 Short D21 Diode BYV95C D23 Zener Diode 18V_1/2W D26 Diode SR360(3A/60V) D27, D18, DA, DB, D8, D9, D3, D25, D22 Diode FR102(1A/100V) D4, D5, D6, D7, D2, D20,D12 Diode 1N4148 F1 Fuse 8A


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PDF SG6105 D83-004 D92-02 d83 004 d83-004 diode d92 02 diode D83 d83004 diode D83 004 diode d92-02 SG6105
Not Available

Abstract: No abstract text available
Text: 5/13 Description The IF-D92 is a high-sensitivity NPN phototransistor detector housed in a “connectorless” style plastic fiber optic package. Optical response of the IF-D92 extends from 400 to 1100 nm, making it compatible with a wide range of visible and near-infrared LEDs and laser diode sources. This includes 650 nm visible red LEDs used for optimum transmission in PMMA plastic optic fiber. The detector , Power Dissipation (PTOT) TA =25°C.100 mW CAUTION: The IF D92 is ESD sensitive. To


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PDF IF-D92 IF-D92ions
2014 - Not Available

Abstract: No abstract text available
Text: capacitor C3 through D3-2 and C8 to charge C4 through diode D9-2 . If the feedback signal is above the , Frequency 300 400 500 1.236 1.25 1.264 V 0 0.2 %/V +100 nA FBPG , 0 -12 FBNG Line Regulation mA kHz 0.2 %/V FBNG Input Bias Current VFBNG = 0V , HVINP voltage. 3 IN 4 LXN DC-DC Inverting Converter Inductor/ Diode Connection 5 INN , to external inductor and boost diode anode. Input Power for the POS Voltage Rail Exposed Pad


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PDF MAX20070 MAX20070 100mA.
2010 - ad513

Abstract: transistor D113 AC512 kd35 ac03 d41 TRANSISTOR D114 ccb format AD511 AD410 AC710
Text: unit : mm (typ) 3274 16.0 14.0 75 76 51 50 100 1 (1.0) (1.0) 26 0.5 0.2 25 0.125 1.2max , is 00H. Display digit DCRAM address (hexadecimal) 1 00 2 01 3 02 4 03 5 04 6 05 7 06 8 07 9 08 10 09 , address shifts as shown below. Display digit DCRAM address (hexadecimal) 1 01 2 02 3 03 4 04 5 05 6 06 7 , 33 2 00 3 01 4 02 5 03 6 04 7 05 8 06 9 07 10 08 11 09 12 0A 13 , ···························· D88 D89 D90 D91 D92 D93 D94 D95 AC01 AC11 AC21 AC31 AC41 AC51 AC61 AC71 AC0m-1 AC1m-1 AC2m


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PDF ENA1417B LC75812PT LC75812PT A1417-54/54 ad513 transistor D113 AC512 kd35 ac03 d41 TRANSISTOR D114 ccb format AD511 AD410 AC710
transistor D113

Abstract: diode d119
Text: 75 0.5 16.0 14.0 51 50 100 26 14.0 16.0 76 1 0.5 0.2 25 0.125 , 9 10 11 12 13 DCRAM address (hexadecimal) 00 01 02 03 04 05 06 , 10 11 12 13 DCRAM address (hexadecimal) 01 02 03 04 05 06 07 08 , 12 13 DCRAM address (hexadecimal) 33 00 01 02 03 04 05 06 07 08 , •••••••••••••••••••••••••••• Dz D88 D89 D90 D91 D92 D93 D94 D95 AC0m-1 AC1m-1 AC2m-1 AC3m


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PDF ENA1417B LC75812PT LC75812PT A1417-54/54 transistor D113 diode d119
transistor D113

Abstract: kd32
Text: ) (1.0) 26 0.5 0.2 25 0.125 1.2max 0.1 SANYO : TQFP100(14X14) Pin Assignments KS2/P2 KS1 , into AC is 00H. Display digit DCRAM address (hexadecimal) 1 00 2 01 3 02 4 03 5 04 6 05 7 06 8 07 9 08 , DCRAM address shifts as shown below. Display digit DCRAM address (hexadecimal) 1 01 2 02 3 03 4 04 5 05 , ) 1 33 2 00 3 01 4 02 5 03 6 04 7 05 8 06 9 07 10 08 11 09 12 0A , ···························· D88 D89 D90 D91 D92 D93 D94 D95 AC01 AC11 AC21 AC31 AC41 AC51 AC61 AC71 AC0m-1 AC1m-1 AC2m


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PDF ENA1417B LC75812PT LC75812PT A1417-54/54 transistor D113 kd32
2003 - D9D TRANSISTOR

Abstract: D9D TRANSISTOR T3 d92 02 diode AD5246 diode d92 02 transistor d9d AD5246BKSZ5-RL7 FDV301N OP27 SC70-6
Text: 0.2 0 VDD = 5.5V ­ 0.2 ­0.4 ­0.6 03875-020 ­0.8 ­1.0 0 16 32 48 64 80 CODE (Decimal) 96 112 0.3 0.2 TA = ­40°C, +25°C, +85°C, +125°C 0.1 0 ­0.1 ­ 0.2 ­0.3 ­0.4 , 112 128 0 RHEOSTAT MODE INL (LSB) FSE, FULL-SCALE ERROR (LSB) 0.3 0.2 VDD = 2.7V 0.1 0 ­0.1 VDD = 5.5V ­ 0.2 03875-021 ­0.3 ­0.4 ­0.5 0 16 32 48 64 80 CODE , 0.2 TA = +25°C 0 TA = +125°C ­ 0.2 ­0.4 TA = ­40°C TA = +25°C ­0.6 TA = +85°C


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PDF 128-Position AD5246 128-position SC70-6 D03875 D9D TRANSISTOR D9D TRANSISTOR T3 d92 02 diode AD5246 diode d92 02 transistor d9d AD5246BKSZ5-RL7 FDV301N OP27 SC70-6
2008 - FAN7529 equivalent

Abstract: panasonic d208 c914 arcotronics R76 FSFR2100 D206 OPTOCOUPLER FAN6961 equivalent C913 fairchild power bjt datasheet SG6858TZ
Text: Page 5 Rev. 1 21/07/08 21/07/08 7 6 D92 EGP30K R910a 430k C95 680nF R94 100R , stable operation with excellent noise immunity. The fast recovery body diode of the MOSFETs improves , is a gallium arsenide (GaAs) light emitting diode optically coupled to a silicon phototransistor. It , C210 C211 C212 C911 C913 C914 C915 D91 D98 D105 D106 D205 D92 D93 D94 D95 D96 D97


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PDF FSFR2100 FAN7529 B66418W. 100kHz, 100mV B66424W. FAN7529 equivalent panasonic d208 c914 arcotronics R76 D206 OPTOCOUPLER FAN6961 equivalent C913 fairchild power bjt datasheet SG6858TZ
TCD2914BFG

Abstract: TCD2914 Toshiba CCD LINEAR IMAGE SENSOR 1200dpi ccd Linear Sensor 10680 22-pin 1200DPI Toshiba CCD LINEAR 1200dpi d80 DIODE ee-3310 D74 2a d79 DIODE
Text: S10680 PHOTO . DIODE . (B/W) S10679 S2 S1 D63 . D62 D15 D14 D13 , ANALOG SHIFT REGISTER 1 D89 . D88 D77 D76 S10680 PHOTO . DIODE . (B , . D88 D77 D76 S10680 PHOTO . DIODE . (G) S10679 S2 S1 D75 . , D76 S10680 PHOTO . DIODE . (R) S10679 S2 S1 D75 . D74 D27 D26 , Pixel (S1) 2.625 m S1 B/W Photo Diode Arrays (10680 pixels × 1 line) 5.25 m 1 2 3 4 5 6 7 8


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PDF TCD2914BFG TCD2914BFG TCD2914 Toshiba CCD LINEAR IMAGE SENSOR 1200dpi ccd Linear Sensor 10680 22-pin 1200DPI Toshiba CCD LINEAR 1200dpi d80 DIODE ee-3310 D74 2a d79 DIODE
2010 - Typical RED, GREEN, YELLOW, AMBER GaAs LED

Abstract: rgb led moving message display HDR1X2 HDR1X3 brick game Open source rgb led moving message display STM32F103Cx diode D83 stm32 spi STP1612
Text: board has a built-in diode bridge, the polarity of the input voltage is not specified. 3.2 , D123 CB CR CG CB RGB LED A R38 R43 D92 D93 CR CG CB RGB LED CR CG CB , D102 D92 Header 2 1 2 P2 D72 D8 2 10 11 12 18 17 16 15 14 13 D32C D32 , power, 4.4V-36V DC10B D1 - D16 RGB LED OSRAM LATB_T686 TOPLED D17 Diode bridge Full wave diode bridge GMBridgeBig D18 Protection diode SM6T18AC SMA DDD1 ST_LOGO


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PDF UM0882 STEVAL-ILL028V1 STP1612PW05 STM32TM STM32 STP1612PW05. Typical RED, GREEN, YELLOW, AMBER GaAs LED rgb led moving message display HDR1X2 HDR1X3 brick game Open source rgb led moving message display STM32F103Cx diode D83 stm32 spi STP1612
2002 - KD24

Abstract: No abstract text available
Text: ~5.5V Package Outline QFP64-G1 QFP64-H1 C-MOS Technology (Substrate :P) 02 /06/05 -1- NJU6535 PIN , or key scanning output terminal by the instruction. (No need for anti-reverse current diode in key scan) Key scanning output terminals. (No need for anti-reverse current diode in key scan) K0 to K4 , . Data input terminal. I/O 61 62 63 64 SO CE SCL SI O I I I 02 /06/05 -3- NJU6535 , ports 0: Display ON 1: Display OFF 0: 1/3 bias 1: 1/2 bias (connect V1 to V2 terminal) 02 /06/05 -5-


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PDF NJU6535 NJU6535 NJU6535FG1 NJU6535FH1 KD24
Supplyframe Tracking Pixel