The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode cmc F 4 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
ABB CMC

Abstract: cnet abb CMC-50 cmc 50 cmc50
Text: Data Sheet 10/72-1.10-2 EN Melody CMC 50 - Multifunction module Valid for CMC 50, CMC 50-1 and CMC 50-2 CMC 50-2 front panel CMC 50 and CMC 50-1 front panel Technical Information: · Technical Information " CMC 50 - Multifunction module" (TI 30/72-2320 EN) 1 Features/application Important note: · This technical information is valid for CMC 50, CMC 50-1 and CMC 50-2. If the modules are identical the description takes place always as CMC 50 and is valid for CMC 50-1 and CMC 50-2 as


Original
PDF
diode 8a 600v

Abstract: CMPFCD86 3 phase pfc diode cmc F 4
Text: CMPFCD86 PFC Diode (8A/600V) IMPORTANT NOTICE Champion Microelectronic Corporation ( CMC ) reserves , CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , CMPFCD86 PFC Diode (8A/600V) TYPICAL CHARACTERISTICS 2009/04/30 Rev1.0 Champion Microelectronic Corporation Page 2 CMPFCD86 PFC Diode (8A/600V) Application Circuit PACKAGE DIMENSION TO , CMPFCD86 PFC Diode (8A/600V) TO-220FP Dimensions in inches and (millimeters) SMC Dimensions in


Original
PDF CMPFCD86 A/600V) O-220AC O-220FP UL94V-0 MIL-STD-202 diode 8a 600v CMPFCD86 3 phase pfc diode cmc F 4
2010 - diode 8a 600v

Abstract: CMPFCD86 CMPFCD86XN220
Text: Diode (8A/600V) TYPICAL CHARACTERISTICS 2010/10/28 Rev1.3 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V) PACKAGE DIMENSION TO-220AC Dimensions in inches and (millimeters) 2010/10/28 Rev1.3 Champion Microelectronic Corporation Page 4 CMPFCD86 PFC Diode , CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , . 2010/10/28 Rev1.3 Champion Microelectronic Corporation Page 1 CMPFCD86 PFC Diode (8A/600V


Original
PDF CMPFCD86 A/600V) O-220AC O-220FP UL94V-0 MIL-STD-202 diode 8a 600v CMPFCD86 CMPFCD86XN220
Not Available

Abstract: No abstract text available
Text: ® ( - 5 5 w ith CMC & TVS diode ) (0863 w ith new LED f o o t p r i n t ) 0 8 6 4 -2 X 6 R -9 5 - F , ith CMC & TVS diode ) (0863 w ith new LED f o o t p r i n t ) 0 8 6 4 -2 X 6 R -9 5 - F PART NO , , 2X6 M a g J a c k ® ( - 5 5 w ith CMC & TVS diode ) (0863 w ith new LED f o o t p r i n t ) 0 8 6 , na^aniinB^pn ns,=■ini PART NO. / DRAWING NO. 2X6 M agJack® ( - 5 5 w ith CMC & TVS diode ) (0863 w ith new LED f o o t p r i n t ) 0 8 6 4 -2 X 6 R -9 5 - F h i a FILE #E196366 AND E169987


OCR Scan
PDF 2002/9S/EÃ 350juH 100MHz 2MHz-30MHz 60MHz-80MHz DC002 08642X6R 08642X6R95-FA
2010 - diode 8a 600v

Abstract: CMPFCD86XN220
Text: Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) TO-220FP Dimensions in inches and (millimeters , CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , CMPFCD86 PFC Diode (8A/600V) ORDERING INFORMATION Part Number Temperature Range Package , Microelectronic Corporation Page 2 CMPFCD86 PFC Diode (8A/600V) TYPICAL CHARACTERISTICS 2009/12/02 Rev1.1 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V) PACKAGE


Original
PDF CMPFCD86 A/600V) O-220AC O-220FP UL94V-0 MIL-STD-202 diode 8a 600v CMPFCD86XN220
2010 - CMPFCD86GN220

Abstract: No abstract text available
Text: Microelectronic Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) TO-220FP Dimensions in inches and , CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , CMPFCD86 PFC Diode (8A/600V) ORDERING INFORMATION Part Number Temperature Range Package , .2 Champion Microelectronic Corporation Page 2 CMPFCD86 PFC Diode (8A/600V) TYPICAL CHARACTERISTICS 2010/05/21 Rev1.2 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V


Original
PDF CMPFCD86 A/600V) O-220AC O-220FP UL94V-0 MIL-STD-202 620support CMPFCD86GN220
2011 - Not Available

Abstract: No abstract text available
Text: Microelectronic Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) IMPORTANT NOTICE Champion , CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , . 2011/09/13 Rev1.6 Champion Microelectronic Corporation Page 1 CMPFCD86 PFC Diode (8A/600V , Diode (8A/600V) TYPICAL CHARACTERISTICS 2011/09/13 Rev1.6 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V) PACKAGE DIMENSION TO-220AC Dimensions in inches and


Original
PDF CMPFCD86 A/600V) O-220AC O-220FP UL94V-0 MIL-STD-202
capacitor 0.1uf 500v

Abstract: tecate cmc 22-03-2071
Text: in the demo board to prevent damage during power Up/Down. The first diode is a high voltage diode across VPP and VDD. Any low current high voltage diode can be used. The second diode can be any low voltage schottky diode across VNN and Gnd. Acceptable Power Up Sequences 1) VPP 2) VNN 3) VDD 4 ) Inputs & , for ±500uA limiting. 1) VNN 2) VDD 3) VPP 4 ) Inputs & Anode Acceptable Power Down Sequences 1) Inputs & Anode 2) VDD 3) VNN 4 ) VPP or Temperature Diode The HV257FG has an integrated


Original
PDF HV257DB1 HV257DB1 32-Channel HV257FG A071204 capacitor 0.1uf 500v tecate cmc 22-03-2071
2003 - 1uf 500v capacitor

Abstract: tecate cmc HV257FG SD103CWS
Text: damage during power Up/Down. The first diode is a high voltage diode across VPP and VDD. Any low current high voltage diode can be used. The second diode can be any low voltage schottky diode across , switches are open. Acceptable Power Up Sequences 1) VPP 2) VNN 3) VDD 4 ) Inputs 1) VDD 2) VNN 3) VPP 4 ) Inputs Acceptable Power Down Sequences 1) Inputs 2) VPP 3) VDD 4 ) VNN 3) VNN 4 ) VPP 1 , ±500uA limiting. Temperature Diode The HV257FG has an integrated silicon diode to help monitor the


Original
PDF HV257DB1 HV257DB1 32-Channel HV257FG OD-323 CMC-025104KX0805T CMC-500103KX0805T 1uf 500v capacitor tecate cmc SD103CWS
2003 - capacitor 0.1uf 400v

Abstract: HV256DB1 HV256FG SD103CWS CMC-025104KX0805T
Text: resistor Rectifier diode Schottky diode Amplifier array Right Angle 4 -pin header Value 25V , . The first diode is a high voltage diode across VPP and VDD. Any low current high voltage diode can be used. The second diode can be any low voltage schottky diode across VNN and Gnd. The output , the amplifier to saturate. Acceptable Power Up Sequences 1) VPP 2) VNN 3) VDD 4 ) Inputs 1) VDD 2) VNN 3) VPP 4 ) Inputs Acceptable Power Down Sequences 1) Inputs 2) VPP 3) VDD 4 ) VNN 1


Original
PDF HV256DB1 HV256DB1 32-Channel HV256FG OD-323 CMC-025104KX0805T CMC-500103KX0805T capacitor 0.1uf 400v SD103CWS CMC-025104KX0805T
2003 - CMT01N60

Abstract: CMT01N60N251 CMT01N60N252
Text: addition, this ! Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy ! Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a ! IDSS and VDS(on) Specified at Elevated Temperature fast recovery time , controls, these devices are particularly well suited for bridge circuits where diode speed and


Original
PDF CMT01N60 CMT01N60 CMT01N60N251 CMT01N60N252
SR 0805 X7R capacitor

Abstract: 1uf 500v capacitor CMC-025104KX0805T 0805 1uF 25V 1uF 400V capacitor 10% ELECTRONIC tecate cmc HV256DB1 HV256FG DIODE SCHOTTKY SOD-323
Text: Chip resistor Rectifier diode Schottky diode Amplifier array Right Angle 4 -pin header Value 25V , . The first diode is a high voltage diode across VPP and VDD. Any low current high voltage diode can be used. The second diode can be any low voltage schottky diode across VNN and Gnd. The output , the amplifier to saturate. Acceptable Power Up Sequences 1) VPP 2) VNN 3) VDD 4 ) Inputs & Anode or 1) VNN 2) VDD 3) VPP 4 ) Inputs & Anode Acceptable Power Down Sequences 1


Original
PDF HV256DB1 HV256DB1 32-Channel HV256FG A071404 SR 0805 X7R capacitor 1uf 500v capacitor CMC-025104KX0805T 0805 1uF 25V 1uF 400V capacitor 10% ELECTRONIC tecate cmc DIODE SCHOTTKY SOD-323
Not Available

Abstract: No abstract text available
Text: TITLE 2X4 M ag Jack® ( - 5 5 with CMC & T V S diode ) (0 8 6 3 with new LED f o o t p r i n t , 2X4 M a g Ja ck ® ( - 5 5 with CMC & T V S diode ) (0 8 6 3 with new LED f o o t p r i n t , OHMS GREEEN □RANGE GREEEN □RANGE 2X4 McxgJack® ( - 5 5 with CMC & T V S diode ) (0 8 6 3 , , lOOOpF 2 k V SH IELD PART NO. / DRAWING NO. 08642X4R95- F FILE NAME 0 8 6 4 2 X 4 R 9 5 - F A.DWG , T V S diode ) (0 8 6 3 with new LED f o o t p r i n t ) 0864-2X4R-95- F 0,550 [13,97] T Y P IC A


OCR Scan
PDF 2002/95/EC. 100MHz 01-12-0R 0864-2X4R-95-F 08642X4R95-F
2010 - SR 0805 X7R capacitor

Abstract: SR 0805 X7R 2010 capacitor chip pads layout capacitor-25v Capacitor 25V 300V power amplifier HV256FG HV256DB1 HV254FG 0805 1uF 25V
Text: damage during power Up/Down. The first diode is a high voltage diode across VPP and VDD. Any low current high voltage diode can be used. The second diode can be any low voltage schottky diode across VNN and GND. Acceptable Power Up Sequences 1) VPP 2) VNN 3) VDD 4 ) Inputs & Anode or 1) VNN 2) VDD 3) VPP 4 ) Inputs & Anode Supertex inc. HVOUT-31 Acceptable Power Down Sequences 1) Inputs & Anode or 1) Inputs & Anode 2) VPP 3) VDD 4 ) VNN 2) VPP 3) VNN 4 ) VDD Inputs and Outputs The


Original
PDF HV256DB1 HV256DB1 32-Channel HV256FG SR 0805 X7R capacitor SR 0805 X7R 2010 capacitor chip pads layout capacitor-25v Capacitor 25V 300V power amplifier HV254FG 0805 1uF 25V
2002 - TF1227

Abstract: CMT06N10N252
Text: . The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode Discrete Fast Recovery Diode with a fast recovery time. Designed for high voltage, high ! Diode is Characterized for Use in Bridge Circuits speed switching , PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed , Fall Time Total Gate Charge A 10 100 gFS (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 50 V


Original
PDF CMT06N10 TF1227 CMT06N10N252
2002 - CMT12N10N220

Abstract: No abstract text available
Text: withstand high energy in ! Source-to-Drain Diode Recovery Time Comparable to a avalanche and commutation modes. The new energy Discrete Fast Recovery Diode efficient design also offers a drain-to-source diode with a ! Diode is Characterized for Use in Bridge Circuits fast recovery time , well suited for bridge circuits where diode speed and commutating safe operating areas are critical , Charge gFS (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 50 V, ID = 12 A, VGS = 10 V, RG = 12


Original
PDF CMT12N10 CMT12N10N220
2010 - CMT01N60

Abstract: MOSFET
Text: , this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for , , these devices are particularly well suited for bridge circuits where diode speed


Original
PDF CMT01N60 CMT01N60 MOSFET
2006 - Not Available

Abstract: No abstract text available
Text: , this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for , , these devices are particularly well suited for bridge circuits where diode speed and commutating safe


Original
PDF CMT08N50
CMT10N40

Abstract: CMT10N40N220
Text: Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and , well suited for bridge circuits where diode speed and commutating safe operating areas are critical , ) * Input Capacitance (VDS = 25 V, VGS = 0 V, Output Capacitance f = 1.0 MHz) Reverse Transfer


Original
PDF CMT10N40 CMT10N40 CMT10N40N220
2002 - CMT07N20N220

Abstract: No abstract text available
Text: . The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode Discrete Fast Recovery Diode with a fast recovery time. Designed for high voltage, high ! Diode is Characterized for Use in Bridge Circuits speed switching , PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed , Forward Transconductance (VDS = 14 V, ID = 3.5A) * Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0


Original
PDF CMT07N20 CMT07N20N220
2013 - CM6805

Abstract: No abstract text available
Text: ´=0.5 per Diode 7 24 16 14 12 T 5 o Rth(j-a) = 4.5 C/W o Rth(j-a) = 15 C/W 4 , ) Figure 3. Average Forward Power Dissipation per Diode Figure 4 . Current derating Curves 180 150 , Microelectronic Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) IMPORTANT NOTICE Champion , CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr ~ 25ns Ultra low reverse leakage current High voltage ultra faster diode PFC application High inrush current


Original
PDF CMPFCD86 A/600V) O-220AC) O-220FP) O-252/DPAK) O-220AC O-220FP CM6805
CMT14N50

Abstract: CMT14N50N3P
Text: addition, this ! Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy ! Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a ! IDSS and VDS(on) Specified at Elevated Temperature fast recovery time , controls, these devices are particularly well suited for bridge circuits where diode speed and


Original
PDF CMT14N50 CMT14N50 CMT14N50N3P
S 170 MOSFET TRANSISTOR

Abstract: transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
Text: addition, this ! Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy ! Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a ! IDSS and VDS(on) Specified at Elevated Temperature fast recovery time , for bridge circuits where diode speed and commutating safe operating areas are critical and offer


Original
PDF CMT20N50 S 170 MOSFET TRANSISTOR transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
2002 - CMT45N10N3P

Abstract: No abstract text available
Text: . The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode Discrete Fast Recovery Diode with a fast recovery time. Designed for , motor controls, these devices are particularly well ! Diode is Characterized for Use in Bridge , circuits where diode speed and commutating safe operating areas are critical and offer additional and , Time Turn-Off Delay Time Fall Time Total Gate Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD


Original
PDF CMT45N10 CMT45N10N3P
2005 - Not Available

Abstract: No abstract text available
Text: , this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for , , these devices are particularly well suited for bridge circuits where diode speed and commutating safe


Original
PDF CMT01N60
Supplyframe Tracking Pixel