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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3D06520TS UJ3D06520TS ECAD Model UnitedSiC 650V-20A Diode TO-220-2L
UJ3D1202TS UJ3D1202TS ECAD Model UnitedSiC 1200V-2A Diode TO-220-2L
UJ3D1725K2 UJ3D1725K2 ECAD Model UnitedSiC 1700V-25A Diode TO-247-2L
UJ3D06504TS UJ3D06504TS ECAD Model UnitedSiC 650V-4A Diode TO-220-2L
UJ3D1210K2 UJ3D1210K2 ECAD Model UnitedSiC 1200V-10A Diode TO-247-2L
UJ3D1220K2 UJ3D1220K2 ECAD Model UnitedSiC 1200V-20A Diode TO-247-2L

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Not Available

Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM150GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values E3"B2#CBB32$132214DDD% , B-32B3CBD% BB4 61?3265CC14BCD &.6)6*+,36&'(6)6*+, 9@6@ 6 * 6  >4B3#CBB32 , *6-36-.6)66-6 -./ 7G ]6)6-./06VF./6^5CC5B 40. 6 6 * 6 6 8 4DD32326


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PDF BSM150GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36
Not Available

Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM100GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values E3"B2#CBB32$132214DDD% , B-32B3CBD% BB4 61?3265CC14BCD &.6)6*+,36&'(6)6*+, 9@6@ 6 2 6  >4B3#CBB32$1CB , *6-36-.6)66-6 -./ 7G ]6)6-./06VF./6^5CC5B 40. 6 6 I* 6 6 8 4DD32326


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PDF BSM100GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36
2007 - diode EZD

Abstract: diode AY 101
Text: ¸€3BIG7฀BEL฀=7I;฀9> 7G =; //* P R>M#a`$&_Si V฀*EL;HI฀799EG:?D=฀IE฀(#"#!+$ JA'NI,/, CoolMOS CP is designed for: V฀& 7G :฀7D:฀HE 7G =; Q Yd ' . ' %7I;฀IE฀:G7?D฀9>7GYW ASeW ea VcS[` UZScYW Q YV ' 0 ' %7I;฀9> 7G =;฀IEI7B QY ' +1 ,- %7I;฀FB7I;7J฀KEBI7=; V b^SeWSf ' , ; V >>฀4 ฀ V AM฀4 ฀I > ฀ ฀ R A ฀ `d %7I;฀!> 7G =;฀!>7G79I;G?HI


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PDF IPD50R399CP 97F78 799EG: /L-33J diode EZD diode AY 101
2008 - diode AY 101

Abstract: IPD50R520CP
Text: V฀3BIG7฀BEL฀=7I;฀9> 7G =; //* P R>M#a`$&_Si V฀*EL;HI฀799EG:?D=฀IE฀(#"#!+$ JA'NI,/, CoolMOS CP is designed for: V฀& 7G : ฀฀1E 7G =; Q Yd ' - ' %7I;฀IE฀:G7?D฀9> 7G =; Q YV ' / ' %7I;฀9> 7G =;฀IEI7B QY ' +- +1 %7I;฀FB7I;7Jà , ¸€!> 7G =;฀!>7G79I;G?HI?9H V >>฀4 ฀I > ฀ ฀ * & -2 & V AM฀IE฀฀4 `=


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PDF IPD50R520CP 97F78 799EG: 87BB7HI diode AY 101 IPD50R520CP
2007 - DFJI

Abstract: JG marking diode EZD transistor 7g
Text: ; % 7I ; !> 7G =; !> 7G 79 I ;G ? H I ? 9 H % 7I ;I EH EJG 9 ;9 > 7G =; % 7I ASeW ; ea I E VcS[` :G 7? D UZScYW 9 > 7G YW % 7I ;9 > 7G =; I EI 7B % 7I ; FB 7I ;7J K EB I 7=; Reverse Diode "? E: ; < EG L7G : K EB I 7=; 0 ;K ;G H ;G ;9 EK ;G NI ? C ; 0 ;K ;G H ;G ;9 EK ;G N9 > 7G =; . ;7AG ;K ;G H ;G ;9 EK ;G N9 , G 7B EL =7I ;9 > 7G =; V # MI G ;C ; : K : I G 7I ;: V& ? => F;7A9 JG G ;DI 9 7F78? B ? I N V . 8< G , designed for: V & 7G : 7D: H E< I H L? I 9 >? D= 1 + . 1 I EFEB E=? ;H V "!+ . $ ! < EG *7C F 7B B 7H I V


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PDF IPD50R399CP /L-33J DFJI JG marking diode EZD transistor 7g
2007 - Not Available

Abstract: No abstract text available
Text: =7I 9 =; I EL G ; > 7G //* P R>M#a`$&_Si V *EL;H <=JG E 7G 7D: H IL?9 D= 1 + . 1 I E=? : E? EFEB ;H V "!+ , 9 9 =; ; E EJG; > 7G Q Yd ' . ' ASeW ea VcS[` UZScYW % 7I I : G D 9 YW ; E 7? > 7G Q YV ' 0 ' % 7I 9 =; I 7B ; > 7G EI QY ' +1 ,- % 7I FB ;7J K I ; 7I EB , % 7I !> 7G !> 7G I ? I H ; =; 79 H ? ;G 9 V >>7.* P I >7. 3 ; P 7.(3 ; V AM  I   4 E


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PDF IPD50R399CP
2006 - 48 H diode

Abstract: h 48 diode
Text: SK 40 GARL 067 E power semiconductor power electronics igbt bridge rectifier diode thyristor cib , <= =3< :3 ' <8 AAA B =48 Units ) ) / / 5 / / 5 5 5 ) Freewheeling Diode SEMITOP 3 IGBT , =8 3D8 3: 46= =634 = 464 3 L ) ) K IF0 / N L Freewheeling Diode =63 Typical Applications , - . / 0 & , 1#, Mechanical data 36C 3G $ 7G 364 " GARL , Recognized File no. E 63532 Dimensions in mm $ 7G &/H+ ' * ,1&&*,$* +*%/>*$*H -H $* ,+*H #%", /"


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BBY39

Abstract: S12 MARKING DIODE marking code MAX S12 MARKING CODE DIODE satellite tuners SOT23 DIODE marking CODE 28
Text: b3E D ^53^24 D074275 bb4 «SICB NAPC/PHILIPS SEHICOND_J I BBY39 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC01 OR DATASHEET DOUBLE VARIABLE CAPACITANCE DIODE The BBY39 is a double variable capacitance diode with a common cathode and mounted in a microminiature envelope (SOT , application in electronic tuners in satellite TV systems. QUICK REFERENCE DATA For each diode : Continuous reverse voltage Operating junction temperature Reverse current Vr = 28 V Diode capacitance at f = 1 MHz


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PDF D074275 BBY39 BBY39 OT-23) OT-23. S12 MARKING DIODE marking code MAX S12 MARKING CODE DIODE satellite tuners SOT23 DIODE marking CODE 28
2008 - Not Available

Abstract: No abstract text available
Text: 3 B 7 B =7I 9 =; I EL G ; > 7G //* P R>M#a`$&_Si V *EL;H <=JG E 7G  1 E? 1 + . 1 I E=? : IL?9 D , t V#aXX$ ' 2* ' $ 7BI ; B? C tX ' +1 ' % 7I I H 9 9 =; ; E EJG; > 7G Q Yd ' - ' % 7I I : G D 9 =; ; E 7? > 7G Q YV ' / ' % 7I 9 =; I 7B ; > 7G , V AM   4 I >    R A    " `d % 7I !> 7G !> 7G I ? I H ; =; 79 H ? ;G 9 V


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PDF IPD50R520CP
2008 - Not Available

Abstract: No abstract text available
Text: /Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUALTM3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode FF225R12ME4 ()* + ,-. (0 + 4,-.5 ()* + !6,-. (0 + ,-.5 ()* + !6,-. , /5 ? + ! & > $ ' ' Vorläufige Daten preliminary data /@@A 7g 7g @A B, ! ! " " !5 , !5 , !5 , & >V' ' < ' = ' D 5a c ' ' 5 D $ ' > ' 7g + 7g + 7g + , <5 /F1 + , <5 /F1 + , <5 /F1 + gH / / / + ,6 , ,-. ()* + !, -. ()* + ,-. ()* + ! ,-. ()* + !, -. /g 7g + , <5 /@ + / /F1 + !, / ' ' 7g + , <5 /@ +


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PDF FF225R12ME4
2008 - JG Diode

Abstract: diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g
Text: B I ? C ; % 7I ; !> 7G =; !> 7G 79 I ;G ? H I ? 9 H % 7I ;I EH EJG 9 ;9 > 7G =; % 7I ;I E: G 7? D9 > 7G =; % 7I ;9 > 7G =; I EI 7B % 7I ; FB 7I ;7J K EB I 7=; Reverse Diode "? E: ; < EG L7G : K EB I 7=; 0 ;K ;G H ;G ;9 EK ;G NI ? C ; 0 ;K ;G H ;G ;9 EK ;G N9 > 7G =; . ;7AG ;K ;G H ;G ;9 EK ;G N9 JG G ;DI , / Y V3 B I G 7B EL =7I ;9 > 7G =; V # MI G ;C ; : K : I G 7I ;: V& ? => F;7A9 JG G ;DI 9 7F78? B ? I N , ,/, CoolMOS CP is designed for: V & 7G : 1 E< I H L? I 9 >? D= 1 + . 1 I EFEB E=? ;H V "!+ . $ ! < EG *7C F


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PDF IPD50R520CP JG Diode diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g
2004 - BSM300GA120DLC

Abstract: EM4G
Text: 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ , / 7g >? ' A 3 7g ' 3J ;h Charakteristische Werte / characteristic values 4 ' A 7g + " 7g + " ' ;6 /C1 + ;6 /C1 + 7g + " ;6 /> + ! / /C1 + 3, / & T' ' ' ' ; ' 7 G < ' A gE 7g + " ;6 /> + ! / /C1 + 3, / gE 7g + " ;6 /> + !


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PDF BSM300GA120DLC BSM300GA120DLC EM4G
2006 - Not Available

Abstract: No abstract text available
Text: SKiiP 1092GB170-4D power semiconductor power electronics igbt bridge rectifier diode thyristor , A" # # &!, ' &!, ' *+ %!% $ + &$ ",' 000 F #, &#",' + Units = = = E < = Inverse diode , ; ", &#",' < =7 = ; =7 7 = ; G = = : ; ", < 1 / min. typ. %7% &+7%' #7! &"' " &" 7G ' & ' max. % 7G " &"7%' "7+ &%7%' + G # #! Units = = H I I H K B Features , #% 7#% %7* %7" "7% &"7#' #7% &#' #7% +' " 7G #7 %' #7 !' *, # # * #, %7, *7, 3 %%(%" &


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PDF 1092GB170-4D
2009 - A6T Diode

Abstract: diode A6t Diode GP 641 a6t gd IRFR3710ZPBF a6t 69 marking a6t IRFU3710Z
Text: Continuous Source Current ­­­ ­­­ 56 ISM (Body Diode ) Pulsed Source Current ­­­ ­­­ 220 showing the integral reverse VSD (Body Diode ) Diode Forward Voltage ­­­ ­­­ 1.3 V p-n junction diode . TJ = 25°C, IS = 33A, VGS = 0V trr Reverse Recovery Time ­­­ , VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 , Leakage Inductance Current Transformer - - Period P.W. + VDD + Body Diode Forward


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PDF 95513C IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF AN-994. IRFR/U3710Z A6T Diode diode A6t Diode GP 641 a6t gd IRFR3710ZPBF a6t 69 marking a6t IRFU3710Z
2003 - Not Available

Abstract: No abstract text available
Text: .(4 Units , , 1 1 , D 1 1 , Diode - Inverter, Chopper MiniSKiiP 3 3-phase bridge , Typical Applications * # ) +, !# - # . +/ ! "! # $ %&'(') Diode - , @ 0 .44 2 , 0 '44 , ,% 0 4 ,2 = 0 .)( 1 @C 0 ) BB4 CK .2& 6.2&8 . 642A8 & 678 427( .4. .4 )2. .2A 6.2A8 .2. 6.8 B 6A8 , , -F HC/ K -I Diode Rectifier ,@ ,6E8 6=>8 @ 0 '( 2 = 0 )( 1 = 0 .(4 1 = 0 , . gate charge characteristic Fig. 8 Typ. thermal impedance Fig. 9 Typ. freewheeling diode forward


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PDF 38NAB065V1
2006 - Not Available

Abstract: No abstract text available
Text: SKBH 28 power semiconductor power electronics igbt bridge rectifier diode thyristor cib , 051 J : : 7G < :G< 7G ) :G) /0B1 /0 1 /0B1 diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter , a diode arm Fig. 10 On-state characteristics of a thyristor arm Fig. 12 Transient thermal , electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module


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2006 - Not Available

Abstract: No abstract text available
Text: %!% $ + &$ ",' 000 F #, &#",' + Units = = = E < = Inverse diode SKiiP 2 2-pack - , ; =7 7 = ; G = = : ; ", < 1 / min. typ. %7% &+7%' #7! &"' " &" 7G ' & ' max. % 7G " , #% 7#% %7* %7" "7% &"7#' #7% &#' #7% +' " 7G #7 %' #7 !' *, # # * #, %7, *7, 3 %%(%" & , diode = = H I I 6 6 Mechanical data 3 3 1 1 ? 7 - 7 - ) " 1( 8


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PDF 1092GB170-4D 1092GB170-4D
2006 - Not Available

Abstract: No abstract text available
Text: SKBT 28 power semiconductor power electronics igbt bridge rectifier diode thyristor cib , 051 J : : 7G < :G< 7G ) :G) /0B1 /0 1 /0B1 diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter , a diode arm Fig. 10 On-state characteristics of a thyristor arm Fig. 12 Transient thermal , electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module


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1998 - NNCD6.8G

Abstract: NNCD3.9G NNCD5.6G IEC1000 IEC1000-42 IEC1000-4-2 NNCD27G C10535E C11531E D1164
Text: product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on (in millimeters) electromagnetic interference (EMI), the diode assures an endur0 , 10 1.0 180 30 NNCD4. 7G 4.42 4.90 5 130 5 10 1.0 170 Test , 1n 0 NNCD4. 7G NNCD6.2G NNCD5.1G NNCD5.6G 1 2 3 4 5 6 7 8 9 VBR - Breakdown Voltage - V Fig. 3 ZT - IT CHARACTERISTICS 1 000 TYP. NNCD3.9G 100 NNCD4. 7G Zz -


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PDF NNCD27G IEC1000-4-2 IEC1000-4- NNCD6.8G NNCD3.9G NNCD5.6G IEC1000 IEC1000-42 NNCD27G C10535E C11531E D1164
1999 - Not Available

Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDR-3001-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE TO-247AC (TO-3PAC) PACKAGE Low switching noise A A2 Low forward voltage drop Low thermal resistance C D1 DT 7G 30SK50 RO High switching capability D DT 7G 30SK50 , 208 guaranteed Polarity: Diode depicted on product Mounting Position: Any Weight: 0.20 Ounces


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PDF SBDR-3001-1B O-247AC 30SK50 O-247 30SK30 30SK40 30SK60 30SK70
2009 - 456 diode

Abstract: No abstract text available
Text: 051 J : : 7G < :G< 7G ) :G) /0B1 /0 1 /0B1 diode arm Fig. 10 On-state characteristics of a thyristor arm Fig. 12 Transient thermal


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2009 - Not Available

Abstract: No abstract text available
Text: 051 J : : 7G < :G< 7G ) :G) /0B1 /0 1 /0B1 diode arm Fig. 10 On-state characteristics of a thyristor arm Fig. 12 Transient thermal


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1999 - Not Available

Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDR-1601-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE TO-247AC (TO-3PAC) PACKAGE Low switching noise A Low forward voltage drop A2 Low thermal resistance C D1 DT 7G 16SK50 RO High switching capability D φP DT 7G 16SK50 , guaranteed Polarity: Diode depicted on product Mounting Position: Any Weight: 0.19 Ounces (5.5 Grams


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PDF SBDR-1601-1B O-247AC 16SK50 O-247 16SK40 16SK60 16SK70 16SK100
Motorola transistor smd marking codes

Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Text: ("Device") Short definition of the semiconductor component. Used abbreviations: C-Diode Capacitance diode , Gallium-Arsenide diode GaAs-N-FET Gallium-Arsenide n-channel FET transistor H-IC Hall effect integrated circuit Lin , integrated gate protection diode MOS-FET-d Metal oxide FET, depletion type MOS-FET-e Metal oxide FET , absorbtion diode Si-Diode Silicon diode Si-npn Silicon npn transistor Si-npn-Darl Silicon npn Darlington , diode Z-Diode/TVS Zenner diode - transient voltage supressor Column 4 ("Short description") Short data


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PDF OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
2001 - 30011B

Abstract: 30SK30 30SK40 30SK50 30SK60 30SK70
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDR-3001-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE TO-247AC (TO-3PAC) PACKAGE Low switching noise A A2 Low forward voltage drop Low thermal resistance C D1 DT 7G 30SK50 RO High switching capability D DT 7G 30SK50 , guaranteed Polarity: Diode depicted on product Mounting Position: Any Weight: 0.20 Ounces (5.5 Grams


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PDF SBDR-3001-1B O-247AC 30SK50 O-247 30SK30-50 30SK60 30SK70 97bsbdr300 30011B 30SK30 30SK40 30SK50 30SK60 30SK70
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