The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1077MJ8/883B Linear Technology IC OP-AMP, 450 uV OFFSET-MAX, 0.25 MHz BAND WIDTH, CDIP8, CERDIP-8, Operational Amplifier
LT1013MN8 Linear Technology IC DUAL OP-AMP, 450 uV OFFSET-MAX, PDIP8, PLASTIC, DIP-8, Operational Amplifier
LT1179MJ Linear Technology IC QUAD OP-AMP, 450 uV OFFSET-MAX, 0.06 MHz BAND WIDTH, CDIP14, CERDIP-14, Operational Amplifier
LT1077MJ8 Linear Technology IC OP-AMP, 450 uV OFFSET-MAX, 0.25 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LTC6240HS8#TRMPBF Linear Technology IC OP-AMP, 450 uV OFFSET-MAX, PDSO8, 0.150 INCH, LEAD FREE, PLASTIC, SOP-8, Operational Amplifier
LTC6240HVHS8#TRMPBF Linear Technology IC OP-AMP, 450 uV OFFSET-MAX, PDSO8, 0.150 INCH, LEAD FREE, PLASTIC, SOP-8, Operational Amplifier

diode b6 k 450 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - Q1NC45

Abstract: D2NC45 STQ1NC45-AP STD2NC45-1 STQ1NC45 d2nc
Text: Drain-source Voltage (VGS = 0) 450 V Drain-gate Voltage (RGS = 20 k ) 450 V Gate- source , STD2NC45-1 STQ1NC45 s s s s s VDSS RDS(on) ID Pw 450 V 450 V < 4.5 < 4.5 1.5 , ) Tj Tstg A Peak Diode Recovery voltage slope 3 V/ns -65 to 150 -65 to 150 , Rating VDS = Max Rating, TC = 125 °C IGSS Min. V(BR)DSS Max. 450 Unit V 1 50 , ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Forward On Voltage ISD = 1.5 A


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PDF STD2NC45-1 STQ1NC45 Q1NC45 D2NC45 STQ1NC45-AP STD2NC45-1 STQ1NC45 d2nc
74HCT

Abstract: HCT245 CERAMIC LEADLESS CHIP CARRIER RB54HCT245C 74HCT245P 74HCT245D 74HCT245C 54HCT245D 54HCT245C RB54HCT245D
Text: DC input diode current, l| K ± 100mA DC output diode current, lOK ± 100mA Short circuit output , 74HCT 54HCT Unit min typ max min typ max vcc Supply voltage 4.50 5.00 5.50 4.50 5.00 5.50 V V , HCT245 Pin Configurations BO B1 B2 B3 B4 17 v_/ 16 _ _ 1_ ul B5 B6 H < B7 I io VSS A7 , A3 A4 A5 A6 20 I VCC TTjl 18 I BO TT| Bi 16] b2 Iii B3 V4~| B4 If] B5 TT| B6 TT1 B7


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PDF HCT245 74HCT 64HCT 54HCT 20-pin 74HCT245P 74HCT245D 54HCT245D RB54HCT245D HCT245 CERAMIC LEADLESS CHIP CARRIER RB54HCT245C 74HCT245C 54HCT245C RB54HCT245D
2014 - Not Available

Abstract: No abstract text available
Text: 6/10 Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD260N 450 DC , to ambient R thCA 1800 P tot [W] 0,040 0,030 B6 R thCA [ K /W] 3~ 0,060 1400 , Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD260N Key Parameters , 0,68 mΩ RthJC 0,164 K /W Base plate 50 mm For type designation please refer to , Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD260N DD260N Elektrische


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PDF DD260N
2002 - Q1NC45R

Abstract: Q1NC45 D2NC45 low vgs mosfet to-92 STD2NC45-1 STQ1NC45R STQ1NC45R-AP
Text: STQ1NC45R Drain-source Voltage (VGS = 0) 450 V Drain-gate Voltage (RGS = 20 k ) 450 V , STD2NC45-1 STQ1NC45R s s s s s V DSS R DS(on) ID Pw 450 V 450 V < 4.5 < 4.5 , Derating Factor dv/dt (1) Tj Tstg Peak Diode Recovery voltage slope 3 V/ns -65 to 150 -65 , Max Rating V DS = Max Rating, TC = 125 °C IGSS Min. V(BR)DSS Max. 450 Unit V 1 , 12 18 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain


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PDF STD2NC45-1 STQ1NC45R Q1NC45R Q1NC45 D2NC45 low vgs mosfet to-92 STD2NC45-1 STQ1NC45R STQ1NC45R-AP
2002 - z15 Diode glass

Abstract: 107 J117 surface mount TRANSISTOR MRF1570FT1 zener diode z7 b2 C35 zener
Text: C38 B5 B6 C34 MRF1570T1 C3 C19 C18 C17 B2 C16 C14 R2 C5 C15 Figure 22. 450 ­ 520 MHz , C15 C44 C43 B6 C42 C41 C40 + VDD C39 B1, B2, B3, B4, B5, B6 C1, C32, C37, C43 , C27 C21 C25 C43 B5 B6 C39 MRF1570T1 L6 L5 B3 B4 C33 VDD GND C28 C36 C35 C34 L7 C30 C31 C32 , C5 DUT Z19 C22 R4 Z4 C6 R2 Z6 Z8 C8 Z10 Z12 L6 B5 C16 C15 C42 B6 C41 C40 C39 Z14 Z16 C26 L2 L4 C28 Z18 C24 C31 C30 VGG C20 C19 C18 B2 + C17 + VDD C38 B1, B2, B3, B4, B5, B6 C1, C9


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PDF MRF1570T1/D MRF1570T1 MRF1570FT1 z15 Diode glass 107 J117 surface mount TRANSISTOR zener diode z7 b2 C35 zener
2002 - transistor c36

Abstract: J117 surface mount TRANSISTOR c25 mosfet c38 transistor MOSFET c25 /c25 mosfet zener diode c25
Text: B5 Z22 Z21 Z19 C31 VGG C15 C44 C43 B6 C42 C41 C40 + VDD C39 B1, B2, B3, B4, B5, B6 C1, C32, C37, C43 C2, C20, C21 C3 C4, C5 C6, C7 C8, C9 C10, C15 C11, C16, C33, C39 , C24 C26 C27 C21 C25 C43 B5 B6 C39 MRF1570T1 L6 L5 B3 B4 C33 VDD GND C28 C36 C35 C34 L7 C30 , Z6 Z8 C8 Z10 Z12 L6 B5 C16 C15 C42 B6 C41 C40 C39 Z14 Z16 C26 L2 L4 C28 Z18 C24 C31 C30 VGG C20 C19 C18 B2 + C17 + VDD C38 B1, B2, B3, B4, B5, B6 C1, C9, C15, C32 C2, C3 C4 C5, C6 C7, C8


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PDF MRF1570T1/D MRF1570T1 MRF1570T1/D transistor c36 J117 surface mount TRANSISTOR c25 mosfet c38 transistor MOSFET c25 /c25 mosfet zener diode c25
12V6GT

Abstract: 6V6GT B585 12V6-GT 6V6GTA 6v6gta tube data
Text: .Octal T-9 Base .Octal 6 or 7 Pin, B6 -81 B6 -84, B7-7 or B7-59 Basing , Grid No. 1 to Plate . Input: gl to (h + k + g2 + g3) . Output: p to (h + k + g2 + g3) . RATINGS (Design Maximum Rating , . — Zero Signal Plate Current . 49.5 T9 6V6GTA 6.3 Volts 450 Ma 11 Seconds 200 , required to protect the tube in the absence of excitation. DAMPER 6W4GT 25W4GT 4CG Heater-Cathode Diode


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PDF B5-82 B5-85. 12V6GT 6V6GT B585 12V6-GT 6V6GTA 6v6gta tube data
2011 - TG-UTB01527S

Abstract: SL4X30MW100T si4844 2SC9018 SL8X50MW70T UMEC TG-UTB01526 2sc9018 transistor TG-UTB01526 SW9 357 2sc9018 equivalent
Text: C30-31 Capacitor, 33 nF, ±5%, COG Murata B6 Ferrite bead,2.5 k /100 MHz. Murata Q1 , , COG Murata C30-31 Capacitor, 33 nF, ±5%, COG Murata B6 Ferrite bead, 2.5 k /100 MHz , -31 Capacitor, 33 nF, ±5%, COG Murata B6 Ferrite bead, 2.5 k /100 MHz Murata Q1 RF transistor , B6 Ferrite bead, 2.5 k /100 MHz Murata Q1 RF transistor, 2SC9018 ETC R34 Resistor , ) Stereo LED on conditions Total R to GND ( k , 1%) Band1 FM1 87­108 MHz 50 µs Separation


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PDF AN602 Si484x-A Si484x Si4844 TG-UTB01527S SL4X30MW100T si4844 2SC9018 SL8X50MW70T UMEC TG-UTB01526 2sc9018 transistor TG-UTB01526 SW9 357 2sc9018 equivalent
2000 - Not Available

Abstract: No abstract text available
Text: MCC 255 MCD 255 Thyristor Modules Thyristor/ Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 , . 8 Transient thermal impedance junction to case (per thyristor or diode ) K /W ZthJC 0.20 , impedance junction to heatsink (per thyristor or diode ) K /W 0.25 ZthJK RthJK for various , = TVJM VR = 0 òi2dt 450 250 6 7 1 MCD Features International standard package , /97-115 Nm/lb.in. 750 g q q Data according to IEC 60747 and refer to a single thyristor/ diode


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PDF 255-12io1 255-14io1 255-16io1 255-18io1
2000 - ZY180L

Abstract: diode b6 k 450 25518I ixys mcc 255
Text: MCC 255 MCD 255 Thyristor Modules Thyristor/ Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 , impedance junction to case (per thyristor or diode ) K /W ZthJC 0.20 RthJC for various conduction , (per thyristor or diode ) K /W 0.25 ZthJK RthJK for various conduction angles d: 0.20 d , TVJM VR = 0 òi2dt 450 250 6 7 1 MCD Features International standard package Direct , / diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions


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PDF 255-12io1 255-14io1 255-16io1 255-18io1 ZY180L diode b6 k 450 25518I ixys mcc 255
1998 - 5pgm

Abstract: No abstract text available
Text: Transient thermal impedance junction to case (per thyristor or diode ) K /W ZthJC RthJC for various , heatsink (per thyristor or diode ) K /W RthJK for various conduction angles d: 0.25 ZthJK d , WESTCODE SEMICONDUCTORS Thyristor Modules Thyristor/ Diode Modules VRSM VDSM VRRM ITRMS = 2 x 450 A ITAVM = 2 x 250 A VRRM = 1200 - 1800 V 3 Type VDRM V 1200 1400 1600 , = 0 (di/dt)cr 450 250 TVJ = TVJM VR = 0 i2dt 3 Maximum Ratings q q Simple


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1999 - diode b6 k 450

Abstract: No abstract text available
Text: MCC 255 MCD 255 Thyristor Modules Thyristor/ Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 , impedance junction to case (per thyristor or diode ) K /W ZthJC 0.20 RthJC for various conduction , (per thyristor or diode ) K /W 0.25 ZthJK RthJK for various conduction angles d: 0.20 d , TVJM VR = 0 òi2dt 450 250 6 7 1 MCD Features International standard package Direct , / diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions


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PDF 255-12io1 255-14io1 255-16io1 255-18io1 diode b6 k 450
2013 - 2SC9018

Abstract: z5u transistor Z5U diode 2sc9018 equivalent SL4X30MW100T 2sc9018 transistor
Text: , ±5%, COG Murata C30-31 Capacitor, 33 nF, ±5%, COG Murata B6 Ferrite bead,2.5 k , Murata C30-31 Capacitor, 33 nF, ±5%, COG Murata B6 Ferrite bead, 2.5 k /100 MHz Murata , B6 Ferrite bead, 2.5 k /100 MHz Murata Q1 RF transistor, 2SC9018. ETC R34 , B6 Ferrite bead, 2.5 k /100 MHz Murata Q1 RF transistor, 2SC9018 ETC R34 Resistor , recommended for the pin 15 RST. Pull-up resistor R3 of 10 k is necessary for pin 16 SDIO. VR1 (100 k / 10


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PDF AN602 i4822/26/ Si4822/26/27/40/44 Si48422/26/27/40/44 2SC9018 z5u transistor Z5U diode 2sc9018 equivalent SL4X30MW100T 2sc9018 transistor
1998 - WPT 250-16

Abstract: thyristor t 380 WPT+250-16 Westcode uk
Text: . 8 Transient thermal impedance junction to case (per thyristor or diode ) 30° DC K /W RthJC , diode ) K /W 30° DC ZthJK RthJK for various conduction angles d: 0.15 d DC 180°C 120 , WESTCODE SEMICONDUCTORS ITRMS = 2 x 450 A ITAVM = 2 x 287 A VRRM = 800 - 1800 V Thyristor Modules Thyristor/ Diode Modules VRSM VRRM VDSM VDRM V V 900 1300 1500 1700 1900 , 3 450 287 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9000 9600 7800 8500


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1998 - WPT 72-12

Abstract: 56us WPT 72-16
Text: Modules Thyristor/ Diode Modules VRSM VRRM VDSM VDRM V V 900 1300 1500 1700 1900 , 1640 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 14 450 13 , TVJ = 25°C; tP = 10 µs; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/µs 450 TVJ = 25°C; VD = 6 V; RGK , a per thyristor/ diode ; DC current per module per thyristor/ diode ; DC current per module 1 , TVJ = 25°C µC A 0.3 0.15 0.5 0.25 K /W K /W K /W K /W 12.7 9.6 50 mm mm m/s2


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PDF O-240 WPT 72-12 56us WPT 72-16
2007 - 74HC245

Abstract: 74hc245d HC245 74HC245DTR2G A114 A115 LS245 74hc245 PIN DIAGRAM
Text: A4 18 3 17 4 16 5 15 6 14 7 13 8 12 9 11 B6 A8 A DATA PORT 2 B8 GND A5 A6 A7 A8 B1 B2 B3 B4 B5 B DATA PORT B6 B7 , Diode Current $20 mA IOK DC Output Diode Current $35 mA IOUT DC Output Sink , at 85_C TSSOP 450 mW MSL Moisture Sensitivity FR Flammability Rating VESD , U 2X L K REF 0.10 (0.004) S L/2 20 M T U S V K K1 S ÍÍÍÍ


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PDF 74HC245 74HC245 LS245. HC245 74hc245d 74HC245DTR2G A114 A115 LS245 74hc245 PIN DIAGRAM
2002 - C35 zener

Abstract: ZO 107 MA mosfet j117 diode zener c29 Transistor Z17 z15 Diode glass J117 MOSFET MRF1570T1 MRF1570FT1 AN721
Text: C36 C37 C15 C38 B5 B6 B2 C16 C34 MRF1570T1 Figure 22. 450 ­ 520 MHz Broadband Test , C19 C18 B1, B2, B3, B4, B5, B6 C1, C32, C37, C43 C2, C20, C21 C3 C4, C5 C6, C7 C8, C9 C10 , , Z21 Z22 Board B6 C42 C41 C32 C31 B5 C15 Z22 C30 RF OUTPUT Z19 C29 , C40 C43 B5 B6 B2 C16 C39 MRF1570T1 Figure 2. 135 ­ 175 MHz Broadband Test Circuit , C19 C18 B1, B2, B3, B4, B5, B6 C1, C9, C15, C32 C2, C3 C4 C5, C6 C7, C8 C10, C16, C37, C42


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PDF MRF1570T1/D MRF1570T1 MRF1570FT1 C35 zener ZO 107 MA mosfet j117 diode zener c29 Transistor Z17 z15 Diode glass J117 MOSFET MRF1570FT1 AN721
2007 - C38 diode

Abstract: Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor
Text: L6 L8 C29 Z19 C31 B5 B6 C42 C41 C40 + VDD C39 B1, B2, B3, B4, B5, B6 C1, C32, C37, C43 C2 , L1 L3 C6 C10 R1 C8 R3 R4 C9 R2 C15 C44 C43 B2 C16 MRF1570T1 B5 B6 C39 L9 C22 C23 L10 C26 C27 L6 C21 , Z13 C23 Z15 C25 L1 L3 C27 Z17 C29 RF OUTPUT C32 Z19 C22 C24 Z14 Z16 C26 B5 B6 C41 C40 C39 + VDD C38 L2 L4 C28 C31 Z18 C30 B1, B2, B3, B4, B5, B6 C1, C9, C15, C32 C2, C3 C4 C5, C6 C7 , VGG C11 GND B1 C12 C13 C14 C2 C4 C3 C18 C19 C20 B2 C17 MRF1570T1 R2 C15 C42 C16 B5 B6 C38 C6 C10 C37


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PDF 470on. AN215A, MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 C38 diode Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor
2SC2930

Abstract: ETG36-040D diode B4 diode b6 k 450 ETG36-040C 2SD1071 B4 diode 2SD2350 2SD835 2SD1797
Text: applications Device type Vcbo Votts VcEÖ Volts VcgO (sus) Volts le Pe cont. Amps. Watts hfe min. k Amps. VCE , Equivalent 'ciifui* ; . Page 40 • ETG36-040C 500 500 400 20 175 50 10 5 0.8 2.5 1.0 TO-3 17 Fig. B6 ETG36 , i.e. with built-in fast recovery diode or without. Please select the version best suited for your , 2SD2350 300 300 300 6 40 500 4 2 — — — TO-220F 2.5 Fig. B8 2SD1071 450 450 300 6 40 500 4 2 3 15 10 , ET386 300 250 250 4 40 1000 2 2 — — — TO-220F 2.5 Fig. B1 ET365 450 450 300 8 40 500 4 2 — â


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PDF 0001b02 ETG36-040C ETG36-040D O-220F ET365 ET385 ET375 2SC2930 diode B4 diode b6 k 450 2SD1071 B4 diode 2SD2350 2SD835 2SD1797
2007 - 74hc245

Abstract: 74HC245 application 74hc245 PIN DIAGRAM 74hc245d HC245 74HC245 Datasheet A114 74HC245DTR2G LS245 A115
Text: 8 12 9 11 B6 A8 A DATA PORT 2 B8 GND A5 A6 A7 A8 B1 B2 B3 B4 B5 B DATA PORT B6 B7 B8 1 DIRECTION 19 OUTPUT ENABLE PIN 10 = GND PIN , )7.0 DC Supply Voltage VIN Value V *0.5 to VCC )0.5 V IIK DC Input Diode Current $20 mA IOK DC Output Diode Current $35 mA IOUT DC Output Sink Current , _C TSSOP 450 mW MSL Moisture Sensitivity FR Flammability Rating VESD ILATCHUP


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PDF 74HC245 74HC245 LS245. HC245 74HC245/D 74HC245 application 74hc245 PIN DIAGRAM 74hc245d 74HC245 Datasheet A114 74HC245DTR2G LS245 A115
2007 - 74HCT245

Abstract: 74hct245 datasheet HCT245 LS245 TSSOP-20 74HCT245D-T
Text: 8 12 9 11 B6 A8 A DATA PORT 2 B8 A5 A6 GND A7 A8 B1 B2 B3 B4 B5 B DATA PORT B6 B7 B8 1 DIRECTION 19 OUTPUT ENABLE PIN 10 = GND PIN , Diode Current $20 mA IOK DC Output Diode Current $35 mA IOUT DC Output Sink , at 85_C TSSOP 450 mW MSL Moisture Sensitivity FR Flammability Rating VESD , OUTPUT ENABLE B7 9 11 DIRECTION B6 8 12 A8 B5 7 13 A7 B4 6 14 A6


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PDF 74HCT245 74HCT245 LS245. HCT245 74HCT245/D 74hct245 datasheet LS245 TSSOP-20 74HCT245D-T
2003 - C35 zener

Abstract: z15 Diode glass 125 c35 fet MOSFET c25 / 0
Text: VGG C15 C44 C43 B6 C42 C41 C40 + VDD C39 B1, B2, B3, B4, B5, B6 C1, C32 , L9 C22 C23 L10 C44 C37 C20 C24 C26 C27 C21 C25 C43 B5 B6 C39 MRF1570T1 L6 L5 B3 B4 C33 VDD GND , Z6 Z8 C8 Z10 Z12 L6 B5 C16 C15 C42 B6 C41 C40 C39 Z14 Z16 C26 L2 L4 C28 Z18 C24 C31 C30 VGG C20 C19 C18 B2 + C17 + VDD C38 B1, B2, B3, B4, B5, B6 C1, C9, C15, C32 C2, C3 C4 C5, C6 C7, C8 , C3 C18 C19 C20 B2 C17 R2 C15 C42 C16 MRF1570T1 B5 B6 C38 C6 C10 C37 C9 R1 C5 C7 R3 R4 C8 C21 C23 C22


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PDF AN215A, MRF1570T1 MRF1570FT1 C35 zener z15 Diode glass 125 c35 fet MOSFET c25 / 0
NIKKO NR 9600

Abstract: Triac bt 808 600cw GDS C25/0 sony KSM 213 DCP BYX36 NEC 10F triac SEMICON INDEXES BT135 gi 934 diod 2U12
Text:  SEMiCON INDEX O' i i< I § VOLUME 2 INTERNATIONAL DIODE and THYRISTOR INDEX 17th Edition , DICKSON ELECTRONICS CORPORATION* DIX ABB-IXYS SEMICONDUCTOR GmbH IXY DIODE TRANSISTOR I NC. DIT ABB , Division AEI CMI, INC.* GENERAL DIODE CORP. GED COLLMER SEMICONDUCTOR INC. COL GE / GENERAL ELECTRIC , INTERNATIONAL COMPONENTS CORPORATION INC INTERNATIONAL DIODE CORPORATION IND INTERNATIONAL RECTIFIER CORP. IRG , . IXY K KERTRON INC.* KTN KINGBRIGHT KNG KMC SEMICONDUCTOR CORPORATION* KMC KNOX SEMICONDUCTOR INC


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PDF
B647

Abstract: tig ac inverter circuit tig ac inverter circuit 180 skm100gb 100
Text: V to rr trr Qrr Thermal Characteristics per IGBT Rihjc 3er diode R lhjc >er module R thch m £2 ns V-0 _ 0996 0,2 0,63 0,05 Q cm C C/W °C/W B6 -47 SKM 100 GB 173 D 'w 600 4 ' 450 , ) Fig. 24 Typ. CAL diode recovered charge Qrr © by SEMIKRON 0796 B6 -51 SKM100GB 173 D , Tj, (T s tg ) V is o i humidity climate o' -n li inverse Diode 8 1 Tc a s e= 25/80 »C T e a s ©= , = 0 V 8! CAL = Controlled Axial Lifetime Technology. Cases and mech. data -> B6 - 52 mA mA nA V


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PDF IEC68T B647 tig ac inverter circuit tig ac inverter circuit 180 skm100gb 100
2000 - STD1LNC60

Abstract: No abstract text available
Text: Voltage (RGS = 20 k ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuos , Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (·)Pulse , 11 ns 43 Cross-over Time ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test , Current Unit 1 Source-drain Current Max. A 4 A 1.6 V 450 ns 720 nC , Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics


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PDF STD1LNC60 O-252 O-251 STD1LNC60
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