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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358CDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C

diode V6 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - diode V6

Abstract: mavr IR 4609 MAVR-002200-12790T MA4ST2200-1141T MA4ST2000 MAVR-002600-12790T MAVR-002500-12790T MAVR-002400-12790T MAVR-002300-12790T
Text: Varactor Diode V6 Electrical Specifications @ TA = +25 °C Breakdown Voltage @ IR = 10A, Vb = 12 V , Parts MA4ST2000 Series Ultra High Ratio Si Hyperabrupt Varactor Diode V6 Typical Capacitance , Varactor Diode V6 Case Styles SOD-323 Case Style 1141 INCHES C D G H B A MAX , Compliant Equivalent Parts MA4ST2000 Series Ultra High Ratio Si Hyperabrupt Varactor Diode V6 , Hyperabrupt Varactor Diode SC-70 (3 Features · · · · Ultra High Capacitance Ratio, C(0.1V)/C(4.7V


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PDF MA4ST2000 SC-70 SC-79, OD-323, SC-70, OD-323 SC-79 diode V6 mavr IR 4609 MAVR-002200-12790T MA4ST2200-1141T MAVR-002600-12790T MAVR-002500-12790T MAVR-002400-12790T MAVR-002300-12790T
2014 - marking v6 diode

Abstract: No abstract text available
Text: Switch Internal Pull-Up Resistance R6 R6=10kΩ Switching Threshold Voltage V6 I6=-10mA Protection Diode V6 I6=10mA Input Ct Internal Resistance R3 Interval Input R2=2.7~30kΩ I2=-10mA Protection Diode V2 I2=30mA/10ms WASH Input R5=10kΩ Switching Threshold/Hysteresis V5 I5=-10mA Protection Diode V I5=10mA Switching Characteristics R4=47kΩ~300kΩ, I4=-150μA R3=0kΩ Interval


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PDF UU642 UU642 QW-R121-023 marking v6 diode
2013 - Not Available

Abstract: No abstract text available
Text: Resistance R6 R6=10kΩ Switching Threshold Voltage V6 I6=-10mA Protection Diode V6 I6=10mA Input Ct Internal Resistance R3 Interval Input R2=2.7~30kΩ I2=-10mA Protection Diode V2 I2=30mA/10ms WASH Input R5=10kΩ Switching Threshold/Hysteresis V5 I5=-10mA Protection Diode V I5=10mA Switching


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PDF UU642 UU642 QW-R121-023
2011 - diode V6

Abstract: LTC2991 LTC2991IMS diode 14-V6 sunon fan LTC2991CMS LTC2991C LTC2990 ltc13 LT624
Text: a differential or remote diode temperature measurement (in combination with V6 ). Differential , , Current, Temperature Measures Four Remote Diode Temperatures 0.7°C (Typ) Accuracy, 0.06°C Resolution 1 , V2 V3 V4 V5 SDA I ADR0 LTC2991 V6 FPGA TEMPERATURE ADR1 0 TINTERNAL , 6.0V Input Voltages V1, V2, V3, V4, V5, V6 , V7, V8, SCL, ADR0, ADR1, ADR2 .­0.3V to (VCC , . 300°C TOP VIEW V1 V2 V3 V4 V5 V6 V7 V8 1 2 3 4 5 6 7 8 16 15 14 13 12


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PDF LTC2991 10ppm LTC2991 LTC2978 LTC4151 12-Bit LTC2487 16-Bit LM134 diode V6 LTC2991IMS diode 14-V6 sunon fan LTC2991CMS LTC2991C LTC2990 ltc13 LT624
2005 - MA4P274-1141T PIN Diodes

Abstract: diode V6 Ma4P45 MA4P7436-1141T diode 14-V6 MA4P7447-287T
Text: Single and Dual Diode Configurations · Tape and Reel Packaging SMPP Series V6 MA4P278 / MA4P7438 , SMPP Series V6 Model Number Each Diode Reverse Voltage VR1 (Volts) Each Diode Maximum Total , SMPP Series V6 Absolute Maximum Value -65°C to +150 °C -65°C to +125 °C + 175 °C + 32 dBm + 31 dBm , SOT-23 Electrical Specifications @ 25°C - SOT-23 Single Diode Nominal Characteristics Model Number MA4P275-287T MA4P789-287T MA4P282-287T MA4P274-287T MA4P277-287T MA4P278-287T SMPP Series V6 RoHS


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PDF MA4P278 MA4P7438 MA4P282 MA4P7447 MA4P274 MA4P7455 MA4P274-1141T PIN Diodes diode V6 Ma4P45 MA4P7436-1141T diode 14-V6 MA4P7447-287T
2011 - Not Available

Abstract: No abstract text available
Text: remote diode temperature measurement (in combination with V6 ). Differential common mode range is 0V to , remote diode test currents on pins V1, V3, V5 and V7, and remote diode terminations on pins V2, V4, V6 , , Temperature Measures Four Remote Diode Temperatures 0.7°C (Typ) Accuracy, 0.06°C Resolution 1°C (Typ) Internal , V2 V3 V4 V5 ­0.25 ­0.50 ­0.75 I 2C INTERFACE LTC2991 V6 FPGA TEMPERATURE , 1 LTC2991 ABSOLUTE MAXIMUM RATINGS (Note 1) PIN CONFIGURATION TOP VIEW V1 V2 V3 V4 V5 V6 V7


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PDF LTC2991 10ppm LTC1392 LTC2970 LTC2978 LTC4151 LTC2487 LM134
2011 - LTC2990

Abstract: 2991 0x09-0x1B LTC2991IMS-PBF CET3904
Text: positive input for a differential or remote diode temperature measurement (in combination with V6 ). , sensor series resistance. The V2, V4, V6 or V8 terminals of the LTC2991 are terminated with a diode if , remote diode test currents on pins V1, V3, V5 and V7, and remote diode terminations on pins V2, V4, V6 , , Temperature Measures Four Remote Diode Temperatures 0.7°C (Typ) Accuracy, 0.06°C Resolution 1°C (Typ) Internal , VCC V1 SDA SCL I 2C INTERFACE ­0.25 ­0.50 ­0.75 2-WIRE ADR0 ADR1 ADR2 V6 V7 TAMBIENT


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PDF LTC2991 10ppm 10ppm/ LTC6102HV) 12-Bit 2991fa LTC2990 2991 0x09-0x1B LTC2991IMS-PBF CET3904
2011 - Not Available

Abstract: No abstract text available
Text: a differential or remote diode temperature measurement (in combination with V6 ). Differential , Diode Temperatures 0.7°C (Typ) Accuracy, 0.06°C Resolution 1°C (Typ) Internal Temperature Sensor , -WIRE SCL ADR0 V3 V4 FPGA V5 SDA 2C INTERFACE 0.75 LTC2991 V6 FPGA , , V6 , V7, V8, SCL, ADR0, ADR1, ADR2.–0.3V to (VCC + 0.3V) Output Voltage , V1 V2 V3 V4 V5 V6 V7 V8 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC


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PDF LTC2991 14-Bit 10ppm/Â 16-Lead LTC4151 12-Bit LTC2487 16-Bit LM134 com/LTC2991
diode V6

Abstract: diode v6 33
Text: consumption. GaInP on GaAs substrate Light Emitting Diode . Long life-solid state reliability. The Blue source color devices are made with InGaN Light RoHS compliant. Emitting Diode . The Green source color devices are made with InGaN Light Emitting Diode . Static electricity and surge damage the , REV NO: V.6 DATE: SEP/18/2010 PAGE: 1 OF 8 APPROVED: WYNEC CHECKED: Allen Liu DRAWN , REV NO: V.6 DATE: SEP/18/2010 PAGE: 2 OF 8 APPROVED: WYNEC CHECKED: Allen Liu DRAWN


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PDF L-154A4SUREQBFZGEC DSAJ9956 SEP/18/2010 diode V6 diode v6 33
2005 - DIODE V6 SMD

Abstract: KPFA-3210QBCVGSEKC diode v6 33 KPFA-3210
Text: with GaN on 3.2mmX1.0mm RIGHT ANGLE SMT LED,1.5mm Sapphire Light Emitting Diode . THICKNESS , Diode . PACKAGE : 2000PCS / REEL. The Super Bright Orange source color devices are made RoHS COMPLIANT. with DH InGaAlP on GaAs substrate Light Emitting Diode . Static electricity and surge damage , . 3. Specifications are subject to change without notice. SPEC NO: DSAE2547 REV NO: V.6 DATE , . SPEC NO: DSAE2547 REV NO: V.6 DATE: NOV/12/2005 APPROVED: J. Lu CHECKED: Allen Liu DRAWN


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PDF KPFA-3210QBCVGSEKC 2000PCS DSAE2547 NOV/12/2005 DIODE V6 SMD KPFA-3210QBCVGSEKC diode v6 33 KPFA-3210
2005 - KAAF-5060PBESURVGC

Abstract: No abstract text available
Text: SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER Light Emitting Diode . PROCESS. The Hyper Red source color devices are made with DH AVAILABLE ON TAPE AND REEL. InGaAlP on GaAs substrate Light Emitting Diode , Light Emitting Diode . Static electricity and surge damage the LEDS. It is recommended to use a wrist , . SPEC NO: DSAC1727 REV NO: V.6 APPROVED: J. Lu CHECKED: Allen Liu D i g i t a l l y , lightened. 2. 1/10 Duty Cycle, 0.1ms Pulse Width. SPEC NO: DSAC1727 REV NO: V.6 DATE: MAR/13/2005


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PDF KAAF-5060PBESURVGC 500PCS DSAC1727 MAR/13/2005 KAAF-5060PBESURVGC
2011 - Not Available

Abstract: No abstract text available
Text: a differential or remote diode temperature measurement (in combination with V6 ). Differential , , V4, V6 or V8 terminals of the LTC2991 are terminated with a diode if that channel is configured for , Diode Temperatures 0.7°C (Typ) Accuracy, 0.06°C Resolution 1°C (Typ) Internal Temperature Sensor , -WIRE SCL ADR0 V3 V4 FPGA V5 SDA 2C INTERFACE 0.75 LTC2991 V6 FPGA , , V6 , V7, V8, SCL, ADR0, ADR1, ADR2.–0.3V to (VCC + 0.3V) Output Voltage


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PDF LTC2991 14-Bit 10ppm/Â 16-Lead LTC2945 12-Bit 24-Bit LTC2487 16-Bit LM134
2005 - Not Available

Abstract: No abstract text available
Text: Light Emitting Diode . The Green source color devices are made with InGaN on SiC Light Emitting Diode . The Blue source color devices are made with InGaN on SiC Light Emitting Diode . Static electricity and , REV NO: V.6 CHECKED: Allen Liu DATE: MAR/20/2005 DRAWN: Y.CHENG PAGE: 1 OF 6 Selection Guide , Units mW mA mA V SPEC NO: DSAC0880 APPROVED: J. Lu REV NO: V.6 CHECKED: Allen Liu DATE: MAR/20 , : J. Lu REV NO: V.6 CHECKED: Allen Liu DATE: MAR/20/2005 DRAWN: Y.CHENG PAGE: 3 OF 6


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PDF KPKF-3030SEEVGPBEC 1000PCS KPKF-3030SEEVGPBEC DSAC0880 MAR/20/2005
2007 - SBC18-11EGWA

Abstract: No abstract text available
Text: EXCELLENT CHARACTER APPEARANCE. Light Emitting Diode . HIGH LIGHT OUTPUT. The Green source color , Emitting Diode . I.C. COMPATIBLE. MULTICOLOR AVAILABLE. MECHANICALLY RUGGED. STANDARD : GRAY FACE , are subject to change without notice. SPEC NO: DSAD2320 REV NO: V.6 DATE: MAY/24/2007 , NO: V.6 DATE: MAY/24/2007 APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Y.L.LI PAGE: 2 OF 7 ERP: 1301000675 SBC18-11EGWA High Efficiency Red SPEC NO: DSAD2320 REV NO: V.6 DATE: MAY


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PDF 75INCH) SBC18-11EGWA inchesY/24/2007 DSAD2320 MAY/24/2007 SBC18-11EGWA
2003 - KAAF-5060PBESEEVGC

Abstract: No abstract text available
Text: /GREEN Description The Blue source color devices are made with InGaN on SiC Light Emitting Diode , substrate Light Emitting Diode . l PACKAGE: 500PCS / REEL. The Green source color devices are made with InGaN on SiC Light Emitting Diode . Static electricity and surge damage the LEDS. It is recommended , change without notice. SPEC NO: DSAB9241 APPROVED : J. Lu REV NO: V.6 CHECKED : Allen Liu DATE , : J. Lu REV NO: V.6 CHECKED : Allen Liu H y p er Or an g e 350 50 30 195 5 Gr een


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PDF KAAF-5060PBESEEVGC 500PCS DSAB9241 MAY/11/2003 KAAF-5060PBESEEVGC
2005 - diode mark V6

Abstract: No abstract text available
Text: light emitting diode and an NPN silicon phototransistor. GaAs light emitting diode and an NPN silicon , emitting diode and output phototransistor: >= 0.6mm. 3.Solid insulation thickness between emitting diode , SPEC NO: DS AD1557 APPROVED: J. Lu REV NO: V.6 CHECKED: Tracy Deng DATE: NOV/16/2005 DRAWN , : DS AD1557 APPROVED: J. Lu REV NO: V.6 CHECKED: Tracy Deng DATE: NOV/16/2005 DRAWN: Y.W.WANG , 600 80 to 400 130 to 600 80 to 600 50 to 600 SPEC NO: DS AD1557 APPROVED: J. Lu REV NO: V.6


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PDF KB817-M KB817-M E225308 4000ions. AD1557 NOV/16/2005 diode mark V6
2007 - SBC15-11EGWA

Abstract: No abstract text available
Text: EXCELLENT CHARACTER APPEARANCE. Light Emitting Diode . HIGH LIGHT OUTPUT. The Green source color , Emitting Diode . I.C. COMPATIBLE. MULTICOLOR AVAILABLE. MECHANICALLY RUGGED. STANDARD : GRAY FACE , are subject to change without notice. SPEC NO: DSAD2315 REV NO: V.6 DATE: MAY/24/2007 , NO: V.6 DATE: MAY/24/2007 APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Y.L.LI PAGE: 2 OF 7 ERP: 1301000674 SBC15-11EGWA High Efficiency Red SPEC NO: DSAD2315 REV NO: V.6 DATE: MAY


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PDF SBC15-11EGWA Y/24/2007 DSAD2315 MAY/24/2007 SBC15-11EGWA
2005 - Not Available

Abstract: No abstract text available
Text: Diode . The Green source color devices are made with InGaN on SiC Light Emitting Diode . The Blue source color devices are made with InGaN on SiC Light Emitting Diode . Static electricity and surge damage the , .Specifications are subject to change without notice. SPEC NO: DSAD0252 APPROVED: J. Lu REV NO: V.6 CHECKED , : DSAD0252 APPROVED: J. Lu REV NO: V.6 CHECKED: Allen Liu DATE: MAR/20/2005 DRAWN: Y.CHENG PAGE: 2 OF 6 KPKF-3030SURVGPBEC Hyper Red SPEC NO: DSAD0252 APPROVED: J. Lu REV NO: V.6 CHECKED


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PDF KPKF-3030SURVGPBEC 1000PCS KPKF-3030SURVGPBEC DSAD0252 MAR/20/2005
2005 - KPF-3236SURKMGKPBC

Abstract: No abstract text available
Text: GaAs substrate Light Emitting Diode . The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode . The Blue source color devices are made with InGaN CAN PRODUCE ANY COLOR IN VISIBLE SPECTRUM, on SiC Light Emitting Diode . INCLUDING WHITE LIGHT. Static , to change without notice. SPEC NO: DSAB9665 REV NO: V.6 DATE: NOV/12/2005 APPROVED: J. Lu , /10 Duty Cycle, 0.1ms Pulse Width. SPEC NO: DSAB9665 REV NO: V.6 DATE: NOV/12/2005


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PDF KPF-3236SURKMGKPBC DSAB9665 NOV/12/2005 KPF-3236SURKMGKPBC
2005 - LED super bright blue

Abstract: KPF-3236SRSGMBC-PRV
Text: THICKNESS. ONE RED, ONE GREEN AND ONE BLUE CHIPS IN Diode . The Super Bright Green source color devices are made ONE PACKAGE. with Gallium Phosphide Green Light Emitting Diode . CAN PRODUCE ANY , LIGHT. Light Emitting Diode . PACKAGE : 1000PCS / REEL. Static electricity and surge damage the , : V.6 DATE: NOV/12/2005 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: Y.W.WANG PAGE: 1 OF 6 , : DSAB2594 REV NO: V.6 DATE: NOV/12/2005 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: Y.W.WANG


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PDF KPF-3236SRSGMBC-PRV DSAB2594 NOV/12/2005 LED super bright blue KPF-3236SRSGMBC-PRV
ta8214k

Abstract: heat sink design toshiba
Text: APPLICATION (1) IC protective diode in V|n diode : D. (2) Power limiting register : R$d If V|n is too high, insert a power limiting register : R$d to reduce power dissipation of IC. (3) Input surge protective Zener diode : ZD , , insert a surge protective Zener diode : ZD. V|\| Diode IN O- Rsd —WAr- ZD if , Diode (Fig. 1) (4) Design of heat sink Thermal resistance : (9j.j of the package of this IC can be


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PDF TA8214K TA8214K /100mA /300mA heat sink design toshiba
2005 - KPHF-1612QBDSURKZGC

Abstract: diode v6 33
Text: GaN on Sapphire Light Emitting Diode . IDEAL FOR BACKLIGHT AND INDICATOR. VARIOUS COLORS AND LENS , . InGaAlP on GaAs substrate Light Emitting Diode . RoHS COMPLIANT. The Green source color devices are made with AlInGaN on Sapphire Light Emitting Diode . Static electricity and surge damage the LEDS. It , .Specifications are subject to change without notice. SPEC NO: DSAB8189 REV NO: V.6 DATE: MAR/16/2005 , . SPEC NO: DSAB8189 REV NO: V.6 DATE: MAR/16/2005 APPROVED: J. Lu CHECKED: Allen Liu DRAWN


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PDF KPHF-1612QBDSURKZGC 2000PCS DSAB8189 MAR/16/2005 KPHF-1612QBDSURKZGC diode v6 33
2010 - Not Available

Abstract: No abstract text available
Text: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch V6 FEATURES Ultra Broad Bandwidth , without notice. MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch V6 Electrical , Non-Reflective AlGaAs PIN Diode Switch V6 Typical RF Performance (Probed on Wafer) Isolation Isol (dB , Non-Reflective AlGaAs PIN Diode Switch V6 Typical RF Performance (Probed on wafer) Output Return Loss , without notice. MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch V6 Operation of the


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PDF 50GHz
2009 - MA4AGSW3

Abstract: 10GHZ M541
Text: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES Ultra Broad Bandwidth: 50 MHz to 50 , without notice. MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 Electrical Specifications @ TA = 25 , AlGaAs PIN Diode Switch Rev. V6 Typical R.F. Performance (Probed on Wafer) @ +25°C IN S E R T IO N , ) or information contained herein without notice. MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 , without notice. MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 Operation of the MA4AGSW3 Switch


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PDF -10mA MA4AGSW3 10GHZ M541
2011 - Not Available

Abstract: No abstract text available
Text: DIODE PACKING & LABEL SPECIFICATIONS Apr 19,2011 XDSA1794 V6 Layout: Maggie L. P. 4/4 , Part Number: XZTNI54W 2.0x1.25mm INFRARED EMITTING DIODE Features Long life and robust , ° Apr 19,2011 XDSA1794 V6 Layout: Maggie L. P. 1/4 SunLED Corporation Part Number: XZTNI54W 2.0x1.25mm INFRARED EMITTING DIODE TNI LED is recommended for reflow soldering and soldering profile is shown below. Apr 19,2011 XDSA1794 V6 Layout: Maggie L. P. 2/4 SunLED


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PDF XZTNI54W 2000pcs 20mnting XDSA1794
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