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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358CDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C

diode T B 8A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - k08t120

Abstract: BUP30 k08t12
Text: E = 15V, I C = 8A T j = 25 ° C T j = 12 5 ° C T j = 15 0 ° C Diode forward voltage VF V G E = 0V, I F = 8A T j = 25 ° C T j = 12 5 ° C T j = 15 0 ° C Gate-emitter threshold voltage Zero gate voltage , recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T , recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T , (off) tf Eon Eoff Ets T j = 25 ° C, V C C = 6 00V, I C = 8A , V G E = 0/ 1 5V , RG=81, L 2 ) = 180nH


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PDF IKW08T120 BUP305D k08t120 BUP30 k08t12
2001 - Not Available

Abstract: No abstract text available
Text: Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b di r r / d t ns mJ Anti-Parallel Diode Characteristic 1) 2) ns Allowed number of , A Diode peak rate of fall of reverse recovery current during t b di r r / d t - 320 , Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15V, I C = 8A V G , - 13 - A - 420 - A/µs Ets T j = 25° C, V C C = 6 00V, I C = 8A , V G


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PDF IKW08T120 BUP305D
1995 - STTA806DI

Abstract: STTA806D
Text: : "FREEWHEEL" MODE. SWITCHING TRANSISTOR IL DIODE : TURBOSWITCH "A" VR t T F = 1/ T = t / T , t I dI F /dt DIODE Turn-off losses (in the diode ) : ta tb V t I RM P3 = , STTA806D(I) ® TURBOSWITCH TM "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A IF(AV) FEATURES AND BENEFITS A A SPECIFIC TO "FREEWHEEL MODE" OPERATIONS: Freewheel or Booster Diode . ULTRA-FAST


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PDF STTA806D O220AC STTA806D STTA806DI STTA806DI
2008 - k08T120

Abstract: No abstract text available
Text: A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 420 - , 8A , - 2.3 - µC Diode peak reverse recovery current Irrm d i F /d t = 600A/ µs - 20 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - , voltage VCE(sat) Diode forward voltage VF V V G E = 15 V, I C = 8A V G E = 0V , I F = 8 , Total switching energy ns - 0.7 - Ets T j = 25°C , V C C = 60 0 V, I C = 8A , V G E


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PDF IKW08T120 BUP305D k08T120
2011 - Not Available

Abstract: No abstract text available
Text: VDS=5V, ID= 8A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.45 IS Maximum , Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF= 8A , dI/dt=500A/µs 3.5 ns 19 , ) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF= 8A , dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF= 8A , dI/dt=500A/µs 14 18 , AO4916 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary


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PDF AO4916 AO4916
Not Available

Abstract: No abstract text available
Text: =10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 19 ns 3.5 ns IF= 8A , dI/dt=500A/µs 8 Body Diode , VGS=10V, VDS=5V VGS=10V, ID= 8A V 5 gFS Forward Transconductance VSD Diode Forward , Body Diode Reverse Recovery Time IF= 8A , dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse , AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary , charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous ID= 8A (VGS


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PDF AO4914 AO4914
2011 - ao4914

Abstract: No abstract text available
Text: = 8A (VGS=10V) rectifier combination for use in DC-DC converters. A R DS(ON) <20.5m Schottky diode is , Drain-Source On-Resistance VGS=4.5V, ID=4A Forward Transconductance Diode Forward Voltage VDS=5V, ID= 8A IS , AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary Q2(N-Channel) 30V 8A (VGS=10V) RDS(ON) <20.5m (VGS=10V) RDS(ON) <28m (VGS=4.5V) ESD Protected 100% UIS Tested , Dissipation B TA=70° C Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward


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PDF AO4914 AO4914
2002 - k860p3

Abstract: mosfet 600V 600A circuit
Text: ISL9K860P3 January 2002 ISL9K860P3 8A , 600V StealthTM Dual Diode General Description The ISL9K860P3 is a StealthTM dual diode optimized for low loss performance in high frequency hard switched , under typical operating conditions. This device is intended for use as a free wheeling or boost diode in , the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower


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PDF ISL9K860P3 ISL9K860P3 k860p3 mosfet 600V 600A circuit
2006 - aod606

Abstract: AOD606L
Text: Junction-to-Ambient Steady-State Maximum Junction-to-Case B t 10s Maximum Junction-to-Ambient A Steady-State Maximum , =6A Forward Transconductance VDS=5V, ID= 8A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous , the PCB allows it. B . The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case , On-Resistance VGS=-4.5V, ID=-4A Forward Transconductance VDS=-5V, ID=- 8A IS=-1A,VGS=0V Diode Forward Voltage , Electrical Characteristics ( T J=25°C unless otherwise noted) 10 VDS=-20V ID=- 8A Capacitance (pF) 1200 1000


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PDF AOD606 AOD606L O-252-4L
2014 - Not Available

Abstract: No abstract text available
Text: .2.2,2013-12-16 IDP08E65D1 EmitterControlledDiodeRapid1Series vGE( t ) 90% VGE a a 10% VGE b b t iC( t ) 90% IC 90% IC 10% IC 10% IC t vCE( t ) t td(off) tf td(on , t2 t3 t4 10 t Rev.2.2,2013-12-16 IDP08E65D1 Emitter Controlled Diode Rapid 1 , Diode RapidSwitchingEmitterControlledDiode IDP08E65D1 EmitterControlledDiodeRapid , KeyPerformanceandPackageParameters Type IDP08E65D1 Vrrm If Vf,Tvj=25°C Tvjmax Marking Package 650V 8A


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PDF IDP08E65D1
AOD606

Abstract: transistor 45 f 122 NAV70 AOD606L mj5025
Text: Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B t 10s , ns 13.2 ns 3.5 ns trr Body Diode Reverse Recovery Time IF= 8A , dI/dt=100A/µs 22.9 Qrr Body Diode Reverse Recovery Charge IF= 8A , dI/dt=100A/µs 18.3 ns nC A: The , maximum temperature of 175°C may be used if the PCB allows it. B . The power dissipation P D is based on T , (Note B ) 10 ZJA Normalized Transient Thermal Resistance 50 1 D=Ton/ T TJ,PK=TA+PDM.ZJA.RJA


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PDF AOD606 AOD606 AOD606L O-252-4L transistor 45 f 122 NAV70 mj5025
AOD604

Abstract: AOD604L MJ5025
Text: Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B t 10s , ns 13.2 ns 3.5 ns trr Body Diode Reverse Recovery Time IF= 8A , dI/dt=100A/µs 22.9 Qrr Body Diode Reverse Recovery Charge IF= 8A , dI/dt=100A/µs 18.3 ns nC A: The , maximum temperature of 175°C may be used if the PCB allows it. B . The power dissipation P D is based on T , Characteristics ( T J=25°C unless otherwise noted) 1200 10 VDS=-20V ID=- 8A 1000 Capacitance (pF) -VGS


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PDF AOD604 AOD604 AOD604L O-252 MJ5025
2005 - AOD604

Abstract: complementary MOSFET TO252
Text: Junction-to-Ambient Steady-State Maximum Junction-to-Case B t 10s Maximum Junction-to-Ambient A Steady-State Maximum , =6A Forward Transconductance VDS=5V, ID= 8A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous , the PCB allows it. B . The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case , ) Figure 13: Power De-rating (Note B ) 10 8 6 4 2 0 0 25 50 75 100 125 150 175 T CASE (°C) Figure 14 , are electrically identical. TO-252 D-PAK Features n-channel p-channel -40V VDS (V) = 40V ID = 8A


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PDF AOD604 AOD604L O-252 complementary MOSFET TO252
2011 - 8n80

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 8N80 Preliminary Power MOSFET 8A , 800V N-CHANNEL POWER MOSFET 1 , Unisonic Technologies Co., Ltd 1 of 6 QW-R502-471. b 8N80 Preliminary Power MOSFET , Energy (Note 2) EAS 850 mJ Repetitive Avalanche Energy (Note 1) EAR 17.8 mJ Peak Diode Recovery dv/dt , : Pulse width limited by maximum junction temperature 2. L = 25mH, IAS = 8A , VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 8A , di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Absolute maximum ratings are


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PDF O-220 O-220F1 QW-R502-471 8n80
DS4737-4

Abstract: No abstract text available
Text: : T0247 = EM IT T ER C O LL E C T O R => G A T E C O LLEC T O R ( B O T TO M S ID E M ET A L) Features , ) ITS08C08A T 0263 (D2 PACK) (with fast recovery diode ) *T0220 is the preferred outline for this device. Note , qe = 15V, lc = 8A V_F = 15V,1 L = 8A T ] = 125" C GE C Caution: These devices are sensitive to , = 8A VG E = ±15V, - - vC E=««W-. ^G(ON) = ^G(OFF) - t , E OFF - 250 Turn-off , precautions. 3/11 ITS08C06 Diode Characteristics T = 25"C unless stated otherwise C Symbol V FM


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PDF DS4737-3 ITS08C06 DS4737-4 ITS08C06
1995 - ULTRAFAST RECTIFIER 16A 600V vf 1.7

Abstract: STTB806D STTB806DI
Text: STTB806D(I) ® TURBOSWITCH TM " B ". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 600V trr (typ) 50ns VF (max) 1.3V K A IF(AV) FEATURES AND , : P4 Watts (Fig. 6 & 7) Fig. 1 : SNUBBER DIODE . Fig. 2 : CLAMPING DIODE . PWM PWM t t T F = 1/ T T = t / T F = 1/ T = t / T Fig. 4 : RECTIFIER DIODE . Fig. 3 : DEMAGNETIZING , , B family, drastically cuts losses in all high voltage operations which require extremely fast


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PDF STTB806D O220AC STTB806D STTB806DI ULTRAFAST RECTIFIER 16A 600V vf 1.7 STTB806DI
2000 - SKP04N60

Abstract: Q67040-S4229
Text: charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b , 125°C, Dynamic test circuit in Figure E) 8A 400A/µs d i r r /d t , DIODE PEAK RATE OF FALL , VCE(sat) V G E = 15 V , I C = 4 A T j =2 5 ° C T j =1 5 0 ° C Diode forward voltage VF V G E = 0V , I , 0A B V G E = 15 V , t S C 10 µ s V C C 6 0 0 V, T j 15 0 ° C 2 Device on 50mm*50mm*1.5mm epoxy , during t b Qrr Irrm d i r r /d t T j =1 5 0 ° C V R = 2 00 V , I F = 4 A, d i F / d t =2 0 0 A/ µ s 230


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PDF SKP04N60 SKB04N60 SKB04N60 O-220AB O-263AB Q67040-S4216 Q67040-S4229 Dec-01 Q67040-S4229
2000 - SKB04N60

Abstract: SKP04N60 Q67040-S4229
Text: VCE(sat) V G E = 15 V , I C = 4 A T j =2 5 °C T j =1 5 0° C VF Diode forward voltage V , Dynamic Characteristic V G E = 15 V LE Internal emitter inductance T O - 22 0A B - 7 - , energy Ets - 0.131 0.160 ns mJ Anti-Parallel Diode Characteristic T j =2 5 °C , time d i F / d t =2 0 0 A/ µs - 165 - trr ns Diode reverse recovery charge Qrr , peak rate of fall of reverse recovery current during t b d i r r /d t - 180 - A/µs


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PDF SKP04N60 SKB04N60 O-220AB Q67040-S4216 O-263AB Q67040-S4229 Mar-00 SKB04N60 SKP04N60 Q67040-S4229
1996 - SMD 8A TRANSISTOR

Abstract: Diode SMD ED 8A transistor SMD 8A TRANSISTOR 935 SMD smd transistor 8A fast recovery diode 1200v SMD smd transistor ed STTA812G
Text: (Fig. 3) Fig. 1: "FREEWHEEL" MODE. TRANSISTOR DIODE : TURBOSWITCH "A" IL PWM VR t T , P5 = t I dI F /dt DIODE Turn-off losses (in the diode ) : ta tb V t I RM P3 , STTA812G ® TURBOSWITCHTM "A" ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINAY DATASHEET MAIN PRODUCT CHARACTERISTICS IF(AV) 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V A K , BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION


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PDF STTA812G SMD 8A TRANSISTOR Diode SMD ED 8A transistor SMD 8A TRANSISTOR 935 SMD smd transistor 8A fast recovery diode 1200v SMD smd transistor ed STTA812G
2014 - E08ED2

Abstract: No abstract text available
Text: functionofpulsewidth (D=tp/ T ) 80 0.30 Tj=25°C, IF = 8A Tj=175°C, IF = 8A Tj=25°C, IF = 8A Tj=175°C, IF , 10% VGE b b t iC( t ) 90% IC 90% IC 10% IC 10% IC t vCE( t ) t td(off , Diode RapidSwitchingEmitterControlledDiode IDV08E65D2 , (accordingtoIEC61249-2-21) •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/ diode / C , Vrrm If Vf,Tvj=25°C Tvjmax Marking Package 650V 8A 1.6V 175°C E08ED2


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PDF IDV08E65D2 JESD-022 E08ED2
2008 - k08T120

Abstract: IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04
Text: /d t = 600A/µs - 13 - A Diode peak rate of fall of reverse recovery current during t b , trr T j = 150 °C - 200 - ns Diode reverse recovery charge Qrr V R = 60 0 V , I F = 8 A , - 2.3 - µC Diode peak reverse recovery current Irrm d i F /d t = 600A/µs - 20 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt , recovery time trr T j = 25°C , - 80 - ns Diode reverse recovery charge Qrr V R =


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PDF IKW08T120 BUP305D k08T120 IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04
2013 - k08T120

Abstract: No abstract text available
Text: - µC Diode peak reverse recovery current Irrm d i F / d t =6 0 0 A/ s - 13 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - , - 20 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t , include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =2 5 C , losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =1 5


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PDF IKW08T120 BUP305D k08T120
2000 - FAST RECOVERY DIODE 200ns 8A 40V

Abstract: Q67040-S4229 SKB04N60 SKP04N60
Text: =2 5 °C T j =1 5 0° C VF Diode forward voltage V V G E = 0V , I F = 4 A T j =2 5 °C , inductance T O - 22 0A B - 7 - nH IC(SC) V G E = 15 V , t S C 10 µs V C C 6 0 0 V, T , F / d t =2 0 0 A/ µs - 165 - ns mJ Anti-Parallel Diode Characteristic Diode , current during t b d i r r /d t - 180 - A/µs Switching Characteristic, Inductive Load , F / d t =2 0 0 A/ µs - 227 - ns mJ Anti-Parallel Diode Characteristic Diode


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PDF SKP04N60 SKB04N60 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) Jul-02 FAST RECOVERY DIODE 200ns 8A 40V Q67040-S4229 SKB04N60 SKP04N60
2014 - Not Available

Abstract: No abstract text available
Text: ) 90% VGE a a 10% VGE b b t iC( t ) 90% IC 90% IC 10% IC 10% IC t vCE , Diode RapidSwitchingEmitterControlledDiode IDP08E65D2 EmitterControlledDiode , KeyPerformanceandPackageParameters Type IDP08E65D2 Vrrm If Vf,Tvj=25°C Tvjmax Marking Package 650V 8A , ,tplimitedbyTvjmax IFpuls 24.0 A Diode surge non repetitive forward current TC=25°C,tp=8.3ms , Symbol Conditions Max.Value Unit Diode thermal resistance,1) junction - case Rth(j-c


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PDF IDP08E65D2
2006 - K04N60

Abstract: No abstract text available
Text: current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 ° C , reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r , , Tj = 125°C, Dynamic test circuit in Figure E) 8A 400A/µs d i r r /d t , DIODE PEAK RATE OF , 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 4 A T j =2 5 ° C T j =1 5 0 ° C Diode forward , d(on) t d(on) tr 10ns 0A 2A 4A 6A 8A 10A 10ns 0 50 100 150 tr 200 IC, COLLECTOR


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PDF SKP04N60 PG-TO-220-3-1 O-220AB) SKP04N60 K04N60
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