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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

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sirio

Abstract: mathcad INDUCTOR DESIGN mathcad buck INDUCTOR DESIGN two switch resonant buck converter McMurray Delta electronics resonant converter zvs using op amps ZCS buck converter calculation of IGBT snubber PSIM 9
Text: 's anti-parallel body diode resumes full load conduction during the subsequent deadtime. Interestingly depending , lower MOSFET turns on and shunts the load current flowing through its body diode . Eventually the lower MOSFET turns off and the load current resumes back into its body diode once again. So far there is no , upper MOSFET turns on hard and forces the body diode of the lower MOSFET to turn off sharply. Depending on the size of the load, and the type of MOSFET used, there may be a significant body diode


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PDF 1109/APEC 50-kHz IECEC-97. 1109/IECEC sirio mathcad INDUCTOR DESIGN mathcad buck INDUCTOR DESIGN two switch resonant buck converter McMurray Delta electronics resonant converter zvs using op amps ZCS buck converter calculation of IGBT snubber PSIM 9
2006 - t01 transistor

Abstract: STD03N SANKEN AUDIO sanken transistor std03 TRANSISTOR sanken catalog STD03P "Sanken Electric" sanken power transistor 8DARLINGTON
Text: impedance by means of thinner die structure Built-in temperature compensation diode Complementary to , Temperature Tstg -55 to 150 °C Diode Forward Current Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ 1/8 T01 -002EA-060309 Darlington Transistor with built-in compensation diodes STD03P , Diode Forward Voltage Di VF IF=2.5mA 1540 mV * hFE rank: 5000 to 12000(O), 8000 to , =0 to 500mV.) Sanken Electric Co.,Ltd. T01 -002EA-060309 2/8 Darlington Transistor with built-in


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PDF STD03P ---MT-105 STD03N T01-002EA-060309 t01 transistor STD03N SANKEN AUDIO sanken transistor std03 TRANSISTOR sanken catalog STD03P "Sanken Electric" sanken power transistor 8DARLINGTON
2006 - TRANSISTOR sanken catalog

Abstract: t01 transistor SANKEN POWER TRANSISTOR SANKEN AUDIO STD03N STD03P T01001 B105 sanken transistor "Sanken Rectifiers"
Text: impedance by means of thinner die structure Built-in temperature compensation diode Complementary to , Temperature Tstg -55 to 150 °C Diode Forward Current . Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ 1/8 T01 -001EA-060309 Darlington Transistor with built-in compensation diodes STD03N , =10mA 2.5 V V 20000 Base-Emitter Voltage VBE VCE=20V,IC=40mA 1190 mV Diode Forward , Electric Co.,Ltd. T01 -001EA-060309 2/8 Darlington Transistor with built-in compensation diodes


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PDF STD03N MT-105 STD03P 10that T01-001EA-060309 TRANSISTOR sanken catalog t01 transistor SANKEN POWER TRANSISTOR SANKEN AUDIO STD03N STD03P T01001 B105 sanken transistor "Sanken Rectifiers"
2006 - TRANSISTOR sanken catalog

Abstract: t01 transistor sanken power transistor sanken t01 STD03N darlington transistor with built-in temperature c darlington transistor for audio power application darlington transistor with built-in temperature sanken audio Power 5pin darlington
Text: Built-in temperature compensation diode Complementary to STD03N Package -MT-105 (TO3P 5 , Current Base Current Collector Power Dissipation Diode Forward Current Junction Temperature Storage , V V A A W mA °C °C IC IB PC Di VF Tj Tstg Sanken Electric Co.,Ltd. 1/6 T01 , =-20V,IC=-40mA IF=2.5mA V V mV mV Base-Emitter saturation Voltage Base-Emitter Voltage Diode Forward , above measurement conditions shall be applied and V=0 to 500mV.) Sanken Electric Co.,Ltd. 2/6 T01


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PDF STD03P STD03N ---MT-105 T01-002EA-060309 TRANSISTOR sanken catalog t01 transistor sanken power transistor sanken t01 STD03N darlington transistor with built-in temperature c darlington transistor for audio power application darlington transistor with built-in temperature sanken audio Power 5pin darlington
2006 - std03n

Abstract: t01 transistor TRANSISTOR sanken catalog sanken power transistor T01001 sanken sanken audio
Text: Built-in temperature compensation diode Complementary to STD03P Package- MT-105 (TO3P 5 , Current Base Current Collector Power Dissipation Diode Forward Current Junction Temperature Storage , A A W mA °C °C IC IB PC Di VF Tj Tstg . Sanken Electric Co.,Ltd. 1/6 T01 , V V V mV mV Base-Emitter saturation Voltage Base-Emitter Voltage Diode Forward Voltage , measurement conditions shall be applied and V=0 to 500mV.) Sanken Electric Co.,Ltd. 2/6 T01


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PDF STD03N STD03P MT-105 T01-001EA-060309 std03n t01 transistor TRANSISTOR sanken catalog sanken power transistor T01001 sanken sanken audio
2005 - BYG21

Abstract: BYG21K BYG21M
Text: BYG21 VISHAY Vishay Semiconductors Fast Avalanche SMD Rectifier Features · · · · · · Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse , Recovery Charge ( nC ) 200 25 CD ­ Diode Capacitance ( pF ) f=1MHz 20 15 10 5 Tamb , Figure 6. Max. Reverse Recovery Charge vs. Forward Current Figure 5. Diode Capacitance vs. Reverse , /T=0.5 tp/T=0.2 10 tp/ T=0.1 tp/T=0.05 tp/T=0.02 Single Pulse tp/T=0.01 1 10­5


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PDF BYG21 BYG21K DO-214AC BYG21M 08-Apr-05 BYG21 BYG21K BYG21M
2005 - Not Available

Abstract: No abstract text available
Text: VISHAY BYG22 Vishay Semiconductors Ultra Fast Avalanche SMD Rectifier Features · · · · · · · · Controlled avalanche characteristic Glass passivated junction Low reverse current Low forward , Figure 7. Max. Reverse Recovery Charge vs. Forward Current 70 f=1MHz CD ­ Diode Capacitance ( pF ) 60 50 40 30 20 10 0 0.1 1.0 10.0 100.0 16452 VR ­ Reverse Voltage ( V ) Figure 5. Diode , tp/T=0.5 tp/T=0.2 10 tp/ T=0.1 tp/T=0.05 tp/T=0.02 tp/T=0.01 1 10­5 10­4 10­3 10­2 10­1 100 101 102


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PDF BYG22 BYG22A BYG22B BYG22D DO-214AC 08-Apr-05
2005 - RthJA

Abstract: BYG20 BYG20D BYG20G BYG20J
Text: BYG20 VISHAY Vishay Semiconductors Super Fast Avalanche SMD Rectifier Features · · · · · · Glass passivated junction Low reverse current Soft recovery characteristics Fast , CD ­ Diode Capacitance ( pF ) f=1MHz 25 20 15 10 5 0 0.1 1.0 10.0 100.0 VR ­ Reverse Voltage ( V ) 16447 Figure 5. Diode Capacitance vs. Reverse Voltage Document Number 86009 , . (K/W) Vishay Semiconductors 1000 125K/W DC 100 tp/T=0.5 tp/T=0.2 10 tp/ T=0.1 tp


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PDF BYG20 BYG20D DO-214AC BYG20G BYG20J 08-Apr-05 RthJA BYG20 BYG20D BYG20G BYG20J
telefunken

Abstract: BYG10 BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y
Text: BYG10 Vishay Telefunken Silicon Mesa SMD Rectifier Features D D D D D Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability , 2000 Qrr ­ Reverse Recovery Charge ( nC ) 30 f=1MHz CD ­ Diode Capacitance ( pF ) 25 20 15 , 9338 Figure 5. Diode Capacitance vs. Reverse Voltage 0.2 0.4 0.6 0.8 1.0 IF ­ , Recovery Time vs. Forward Current 1000 125K/W DC 100 tp/T=0.5 tp/T=0.2 10 tp/ T=0.1 tp/T


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PDF BYG10 BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y D-74025 07-Sep-00 telefunken BYG10 BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y
16429

Abstract: BYG21 BYG21K BYG21M
Text: BYG21 Vishay Telefunken Fast Silicon Mesa SMD Rectifier Features D D D D D D Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good , Reverse Recovery Charge ( nC ) 25 CD ­ Diode Capacitance ( pF ) f=1MHz 20 15 10 5 0 0.1 , Reverse Voltage ( V ) 16432 94 9350 Figure 5. Diode Capacitance vs. Reverse Voltage Z thp ­ , tp/T=0.5 tp/T=0.2 10 tp/ T=0.1 tp/T=0.05 tp/T=0.02 Single Pulse tp/T=0.01 1 10­5


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PDF BYG21 BYG21K BYG21M D-74025 27-Sep-00 16429 BYG21 BYG21K BYG21M
AD161/AD162

Abstract: AD162 AD161 GP 015 DIODE AD149 AC176 AC126 AC187 AC127 OC201
Text: Push-pull 0.17 AC 169 G/PNP Diode connected bias stabilising transistors 0.10 AC176 G/NPN T01 700mW , AC 107 G/PNP R09 80mW 2mc<" -15 30-160 0.3mA Low Noise Audio 0.35 AC113 G/PNP T01 200mW 2mc121 -26 , /PNP TOI 500mW 1.7mc121 -32 125l2> 2mA 0.20 AC 127 G/NPN T01 340mW 2.5mc12' + 32 25-143 500mA 0.17 AC 128 G/PNP TOI 700mW 1.5mc121 -32 60-175 300mA Class 'A' or 'B' Output 0.15 AC 132 G/PNP T01 167mW 1.3mcl2> -32 115121 50mA 0.35 AC151 G/PNP T01 900mW 1.5mc121 -24 30-250 2mA L.F. G.P. 0.25 AC


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PDF 200mW 700kcl2) OC201 0mc12' OC202 2mc12' 300mA ACY18 AD161/AD162 AD162 AD161 GP 015 DIODE AD149 AC176 AC126 AC187 AC127
2001 - BYG22A

Abstract: BYG22B BYG22D BYG22 Super Ultra Fast Recovery Rectifier
Text: BYG22 Vishay Semiconductors Ultra Fast Silicon Mesa SMD Rectifier Features D D D D D D D D Controlled avalanche characteristic Glass passivated junction Low reverse current Low , CD ­ Diode Capacitance ( pF ) Qrr ­ Reverse Recovery Charge ( nC ) 70 50 40 30 20 10 0 , 10.0 100.0 0 VR ­ Reverse Voltage ( V ) 16452 94 9354 Figure 5. Diode Capacitance vs , =0.2 10 tp/ T=0.1 tp/T=0.05 tp/T=0.02 Single Pulse tp/T=0.01 1 10­5 94 9339 10­4 10­3


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PDF BYG22 BYG22A BYG22B BYG22D D-74025 27-Sep-00 BYG22A BYG22B BYG22D BYG22 Super Ultra Fast Recovery Rectifier
2001 - BYG21

Abstract: BYG21K BYG21M
Text: BYG21 Vishay Semiconductors Fast Silicon Mesa SMD Rectifier Features D D D D D D Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery , ­ Reverse Recovery Charge ( nC ) 25 CD ­ Diode Capacitance ( pF ) f=1MHz 20 15 10 5 0 , VR ­ Reverse Voltage ( V ) 16432 94 9350 Figure 5. Diode Capacitance vs. Reverse Voltage Z , 125K/W DC 100 tp/T=0.5 tp/T=0.2 10 tp/ T=0.1 tp/T=0.05 tp/T=0.02 Single Pulse tp/T


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PDF BYG21 BYG21K BYG21M D-74025 27-Sep-00 BYG21 BYG21K BYG21M
telefunken

Abstract: BYG20 BYG20D BYG20G BYG20J smd diode byg20
Text: BYG20 Vishay Telefunken Super Fast Silicon Mesa SMD Rectifier Features D D D D D D Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery , ( nC ) 30 f=1MHz CD ­ Diode Capacitance ( pF ) 25 20 15 10 5 0 0.1 IR=0.5A, iR , 100.0 0 VR ­ Reverse Voltage ( V ) 16447 94 9344 Figure 5. Diode Capacitance vs. Reverse , =0.2 10 tp/ T=0.1 tp/T=0.05 tp/T=0.02 Single Pulse tp/T=0.01 1 10­5 94 9339 10­4 10­3


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PDF BYG20 BYG20D BYG20G BYG20J D-74025 27-Sep-00 telefunken BYG20 BYG20D BYG20G BYG20J smd diode byg20
BYG22A

Abstract: BYG22B BYG22D telefunken rr 100 BYG22
Text: BYG22 Vishay Telefunken Ultra Fast Silicon Mesa SMD Rectifier Features D D D D D D D D Controlled avalanche characteristic Glass passivated junction Low reverse current Low forward voltage , Diode Capacitance ( pF ) Qrr ­ Reverse Recovery Charge ( nC ) 70 50 40 30 20 10 0 0.1 , 100.0 0 VR ­ Reverse Voltage ( V ) 16452 94 9354 Figure 5. Diode Capacitance vs. Reverse , =0.2 10 tp/ T=0.1 tp/T=0.05 tp/T=0.02 Single Pulse tp/T=0.01 1 10­5 94 9339 10­4 10­3


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PDF BYG22 BYG22A BYG22B BYG22D D-74025 27-Sep-00 BYG22A BYG22B BYG22D telefunken rr 100 BYG22
2001 - BYG10

Abstract: BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y smd diode byg10
Text: BYG10 Vishay Semiconductors Silicon Mesa SMD Rectifier Features D D D D D Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability , Semiconductors 2000 Qrr ­ Reverse Recovery Charge ( nC ) 30 f=1MHz CD ­ Diode Capacitance ( pF ) 25 20 , 94 9338 Figure 5. Diode Capacitance vs. Reverse Voltage 0.2 0.4 0.6 0.8 1.0 IF ­ , Recovery Time vs. Forward Current 1000 125K/W DC 100 tp/T=0.5 tp/T=0.2 10 tp/ T=0.1 tp/T


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PDF BYG10 BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y D-74025 07-Sep-00 BYG10 BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y smd diode byg10
2004 - AN588

Abstract: Transil 30V ITA6V1M3 transil diode equivalent ITA10Bx SO20 package ITA25B1 "parasitic capacitance" smd ITA10B1 IEC801-5
Text: application. Therefore, one no longer chooses an ITAxx - type protection as he did a Transil diode . In order , presence of ESD-type disturbances, standard protection devices (axial and even SMD diodes) only guarantee , Figure 4. The use of a Bi-Directional Transil Array (ITAxxB series) Line 1 T01 Line 2 T1 Ligne , T02 Wiring Principle. T01 T02 Equivalent Function. Basic Principle: Connect two Transil to ground ( T01 and T02). This precaution doubles the current capability in relation to ground, thus


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PDF AN588 AN588 Transil 30V ITA6V1M3 transil diode equivalent ITA10Bx SO20 package ITA25B1 "parasitic capacitance" smd ITA10B1 IEC801-5
1995 - ITA6V1U3

Abstract: fast diode "40 A" transil 30 V TRANSIL DIODE smd 2SB492 ITAXXB3 ita6v1m3 rs232 schematic diagram ITA6V5C1 WO-2 IEC801-5
Text: did a Transil diode . In order to accurately select the correct component, one must take into account , ESD-type disturbances, standard protection devices (axial and even SMD diodes) only guarantee a , T01 Ligne 1 Ligne 2 IN IN T1 T2 Line 2 OUT OUT Line n T1 Ligne n IN Tn T2 Tn OUT T01 T02 Wiring Principle. T02 Equivalent Function. a) Basic Principle : Connect two Transil to ground ( T01 and T02). This precaution doubles the current capability in


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2003 - BYX86

Abstract: BYX82 BYX83 BYX84 BYX85 SOD57 Package
Text: BYX82 to BYX86 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode , , Tj = 100 °C IR 10 25 µA Diode capacitance VR = 4 V, f = 1 MHz CD 20 , 2.4 3.0 30 RthJAv35K/W RthJAv57K/W 200 CD ­ Diode Capacitance ( pF ) T j ­ Junction , . Diode Capacitance vs. Reverse Voltage Document Number 86052 Rev. 4, 07-Jan-03 BYX82 to BYX86 , RthJAv100K/W 100 tp/T=0.5 10 tp/T=0.2 tp/ T=0.1 tp/T=0.05 Tamb=25°C Tamb=100°C Tamb


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PDF BYX82 BYX86 MIL-STD-750, BYX82 BYX83 BYX84 BYX85 D-74025 07-Jan-03 BYX86 BYX83 BYX84 BYX85 SOD57 Package
2008 - NTC16

Abstract: DVB-S2 chipset L33 SMD smd transistor L33 SMD l34 Transistor smd transistor L34 SMD l33 Transistor optocoupler PC817 DVB-S2 hd 22 TDK VFD TRANSFORMER
Text: Figure 2. + D56 BY T01 -400 Main characteristics AN2600 Electrical schematic AN2600 2 , the MOSFET, and the IC is supplied only by the auxiliary winding of the transformer via the diode D62 , Number of turns Wire 2-3 26 0.45 - G 12-11 W2 - 3.3 V 3 Cu-foil - W=10 mm T=0.1 mm 13-12 W3 - 5 V 1 Cu-foil - W=10 mm T=0.1 mm 14-11 W4 - 16 V 12 2x0.45 , Ceramic cap 1 C87 10 µF 16 V Electrolytic cap 2 C89,C99 470 pF 0805 50 V SMD


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PDF AN2600 L6668 265Vac) L6668, NTC16 DVB-S2 chipset L33 SMD smd transistor L33 SMD l34 Transistor smd transistor L34 SMD l33 Transistor optocoupler PC817 DVB-S2 hd 22 TDK VFD TRANSFORMER
BYX82

Abstract: BYX83 BYX84 BYX85 BYX86
Text: Diode capacitance Reverse recovery time Reverse recovery charge Type Symbol VF IR IR CD trr , Voltage CD ­ Diode Capacitance ( pF ) RthJA 100K/W 80 1.8 30 v v 1.2 RthJA 35K , . Diode Capacitance vs. Reverse Voltage Document Number 86052 Rev. 3, 27-Sep-00 BYX82.BYX86 Z , 100K/W 100 tp/T=0.5 10 tp/T=0.2 tp/ T=0.1 tp/T=0.05 Tamb= 25°C Tamb= 100°C Tamb= 45 , °C Tamb= 60°C tp/T=0.2 tp/ T=0.1 tp/T=0.05 Tamb= 70°C 0.02 Tamb= 100°C 0.01 1 10­3


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PDF BYX82. BYX86 BYX82 BYX83 BYX84 BYX85 D-74025 27-Sep-00 BYX82 BYX83 BYX84 BYX85 BYX86
2013 - Not Available

Abstract: No abstract text available
Text: , 0.006 grams  Marking: T01 Fig.161 (TOP VIEW) o Maximum Ratings and Thermal , =-10V, ID=-0.7A, VGS=-4.5V, RG=6Ω (Note 1,2) ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage IS VSD -IS=-1A, VGS=0V NOTES: 1. Pulse , Version PJT7801_R1_00001 SOT-363 3K pcs / 7” reel T01 Halogen free PJT7801_R2_00001 SOT-363 10K pcs / 13” reel T01 Halogen free CODE VERSION MOUNTING PAD LAYOUT July


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PDF PPJT7801 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV
2013 - Not Available

Abstract: No abstract text available
Text: , 0.006 grams  Marking: T01 Fig.161 (TOP VIEW) o Maximum Ratings and Thermal , =-10V, ID=-0.7A, VGS=-4.5V, RG=6Ω (Note 1,2) ns Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage IS VSD -IS=-1A, VGS=0V NOTES: 1. Pulse , Version PJT7801_R1_00001 SOT-363 3K pcs / 7” reel T01 Halogen free PJT7801_R2_00001 SOT-363 10K pcs / 13” reel T01 Halogen free CODE VERSION MOUNTING PAD LAYOUT


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PDF PPJT7801 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV
2001 - Not Available

Abstract: No abstract text available
Text: Semiconductors Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance , 40 0 0 94 9579 Figure 3. Forward Current vs. Forward Voltage 30 CD ­ Diode Capacitance ( pF , /Repetitive Peak Reverse Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage www.vishay.de · , =0.2 tp/ T=0.1 tp/T=0.05 0.02 0.01 1 10­3 Single Pulse 10­2 10­1 100 101 100 101 IFRM ­ Repetitive Peak , for Pulse Cond. (K/W) 1000 VRRM 1000V t 10ms RthJA 100K/W 100 tp/T=0.5 tp/T=0.2 tp/ T=0.1 tp/T


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PDF BYX82. BYX86 BYX82 BYX83 BYX84 BYX85 BYX86 D-74025 27-Sep-00
1996 - BYX85

Abstract: BYX82 BYX83 BYX84 BYX86
Text: =1A VR=VRRM VR=VRRM, Tj=100°C VR=4V, f=0.47MHz IF=0.5A, IR=1A, iR=0.25A IF=IR=1A, di/dt=5A/ms Diode , Voltage TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 BYX82.BYX86 CD ­ Diode Capacitance ( pF , ( V ) 94 9574 Z thp ­ Thermal Resistance for Pulse Cond. (K/W) Figure 5. Diode Capacitance vs. Reverse Voltage 1000 v v VRRM 200V RthJA 100K/W 100 tp/T=0.5 10 tp/T=0.2 tp/ T=0.1 tp , 100 94 9578 tp/T=0.5 10 Tamb= 25°C Tamb= 45°C Tamb= 60°C tp/T=0.2 tp/ T=0.1 tp/T


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PDF BYX82. BYX86 BYX82 BYX83 BYX84 BYX85 D-74025 12-Dec-94 BYX85 BYX82 BYX83 BYX84 BYX86
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