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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode PR 93A Datasheets Context Search

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2002 - diode PR 93A

Abstract: isd 2100 STW9NB80
Text: Pr e du o so Ob - s) t( ns SOURCE DRAIN DIODE Symbol Unit Max. 9 Unit , Circuit For Inductive Load Switching And Diode Recovery Times Pr e let o bs O 6/8 ro P , STW9NB80 N-CHANNEL 800V - 0.85 - 9.3A TO-247 PowerMESHTM MOSFET TYPE s s s s RDS(on , le ro P so Ob - du o Pr e TO-247 ABSOLUTE MAXIMUM RATINGS Symbol Unit , Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (·)Pulse


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PDF STW9NB80 O-247 diode PR 93A isd 2100 STW9NB80
SP126

Abstract: No abstract text available
Text: broadest product range in SOT-89, SOT-143, and MELF diode packages. ■Our Surface Mount devices, as , FR 93 B FR 93A 102 102 B S R 41 B S R 42 B FR 106 B FS17 B FS17A 102 102 B FS18 , ST122 111 PM B T4401 94 PR LL4001 127 105 PR LL4002 PR LL5817 PR LL5818 127 , 111 111 94 127 PM B T5088 105 PR LL 5819 125 127 127 PM B T5089 PM B T5401 , B Y D 77E B Y D 77F B FG 55 B FG 67 BSP205 BSP206 BSP220 BSP225 B FG 92A B FG 93A


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PDF OT-23 OT-223 OT-89, OT-143, EIA-RS481A IEC286-3 BB215 PB219 PZT2907A SP126
3408 diode

Abstract: No abstract text available
Text: DESCRIPTION: The RT-3400 Series is a line of PIN diode based digital fiber-optic receivers. The receiver , silicon (0.8 jim) PIN diode in a transimpedance circuit configuration for maximum sensitivity and dynamic , levels below sensitivity. Rev 3/ 93a RT-3400 Series RECEIVER PERFORMANCE ® TA = 25 , power required to maintain a B E R - 10exp -9; PR BS - 2exp15-1 pattern N R Z (6) T h e R T -3404 is , , 10Mb/s, 20Mb/s, 50Mb/s, <1 Mb/s, 10Mb/s, 20Mb/s, 50Mb/s, ST ST ST ST ST ST ST ST LASER DIODE Inc


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PDF RT-3400 10Mb/s, 20Mb/s, 50Mb/s, 3408 diode
2004 - 7338

Abstract: 7338 transistor 385F APT10090HLL
Text: 9.3A , RG = 5 µJ 75 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN , Reverse Recovery Charge (IS = - 9.3A , dl S/dt = 100A/µs) 9.0 dv/ dt Peak Diode Recovery dv , APT10090HLL 1000V 9.3A POWER MOS 7 R MOSFET TO-258 ® Power MOS 7 is a new , 1970 VGS = 0V ID = 9.3A @ 25°C 9 VGS = 15V 4 VDD = 500V RG = 1.6 Fall Time Eon , 9.3A , RG = 5 Turn-on Switching Energy Eoff 3 INDUCTIVE SWITCHING @ 25°C 6 60


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PDF APT10090HLL O-258 O-258 7338 7338 transistor 385F APT10090HLL
2004 - marking 93A

Abstract: No abstract text available
Text: A G integral reverse ­­­ ­­­ 37 S p-n junction diode . ­­­ ­­­ 1.5 V TJ = 25°C, IS = 9.3A , l Lead-Free D VDSS = 300V RDS(on) = 0.45 G ID = 9.3A S Description Third , Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering , 9.3A 6.9 nC VDS = 240V 12 VGS = 10V, See Fig. 6 and 13 ­­­ VDD = 150V ­­­ ID = 9.3A ns ­­­ , Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward Voltage Reverse


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PDF IRFB9N30APbF O-220 O-220AB. O-220AB marking 93A
diode PR 93A

Abstract: bdw93c bdw93
Text: noted) RATING BDW93 Collector-base voltage ( lE = 0) BDW 93A BDW93B BDW93C BDW93 Collector-em itter voltage ( lB = 0) BDW 93A BDW93B BDW93C Em itter-base voltage Continuous collector current Continuous base , saturation voltage Base-emitter saturation voltage Parallel diode lc = 10 A lc = SA II II L U O , R PR O D U C TS ARE NOT DESIGNED, INTENDED, A U TH O R IZED , OR W A R R A N TE D TO BE SUITABLE FOR


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PDF BDW93, BDW93A, BDW93B, BDW93C BDW94, BDW94A, BDW94B BDW94C T0-220 BDW93 diode PR 93A
Not Available

Abstract: No abstract text available
Text: use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to , 30V VDS(V) = 30V ID = 9.3A (VGS = 10V) ID=8.3A RDS(ON) < 14.5mΩ <18mΩ (VGS = 10V) RDS(ON , Current A B TA=25° C Power Dissipation TJ, TSTG TA=25° C Pulsed Diode Forward Current , a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode , even though , VDS=5V, ID= 9.3A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Reverse Transfer Capacitance


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PDF AO4918 AO4918 AO4918L
AO4918

Abstract: AO4918L
Text: Body Diode + Schottky Reverse Recovery Time IF= 9.3A , dI/dt=100A/µs 23.5 28 ns Qrr Body Diode + Schottky Reverse Recovery Charge IF= 9.3A , dI/dt=100A/µs 13.3 16 nC 2 A , use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to , 30V VDS(V) = 30V ID = 9.3A (VGS = 10V) ID=8.3A RDS(ON) < 14.5m <18m (VGS = 10V) <27m (VGS = , TA=25°C Power Dissipation TJ, TSTG TA=25°C Pulsed Diode Forward Current A PD Symbol


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PDF AO4918 AO4918 AO4918L
1998 - IRFB9N30A

Abstract: MJ4001
Text: 37 S p-n junction diode . ­­­ ­­­ 1.5 V TJ = 25°C, IS = 9.3A , VGS = 0V ­­­ 280 420 ns TJ = 25 , ) = 0.45 G ID = 9.3A S Description Third Generation HEXFETs from International Rectifier , Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage , VGS = 30V nA -100 VGS = -30V 33 ID = 9.3A 6.9 nC VDS = 240V 12 VGS = 10V, See Fig. 6 and 13 ­­­ VDD = 150V ­­­ ID = 9.3A ns ­­­ RG = 12 ­­­ RD = 16,See Fig. 10 D Between lead, ­­­


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PDF IRFB9N30A O-220 O-220AB IRFB9N30A MJ4001
2005 - d93a

Abstract: D-93A AOP800 AOP800L
Text: Reverse Recovery Time IF= 9.3A , dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF= 9.3A , are electrically identical. VDS (V) = 30V ID = 9.3A (VGS = 10V) RDS(ON) < 18m (VGS = 10V) RDS(ON , 22.3 27 VGS=4.5V, I D=7.4A 23 28 VDS=5V, ID= 9.3A 23 VGS=10V, I D= 9.3A RDS(ON , =0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS DYNAMIC PARAMETERS Ciss Input , =15V, I D= 9.3A 0.7 0.85 19.2 VGS=0V, VDS=0V, f=1MHz 24 nC 9.36 nC 2.6 nC


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PDF AOP800 AOP800 AOP800L AOP800L d93a D-93A
AO4918

Abstract: AO4918L
Text: Body Diode + Schottky Reverse Recovery Time IF= 9.3A , dI/dt=100A/µs 23.5 28 ns Qrr Body Diode + Schottky Reverse Recovery Charge IF= 9.3A , dI/dt=100A/µs 13.3 16 nC 2 A , use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to , 30V VDS(V) = 30V ID = 9.3A (VGS = 10V) ID=8.3A (VGS = 10V RDS(ON) < 14.5m <18m (VGS = 10V) <27m , Current B TA=25°C Power Dissipation TJ, TSTG TA=25°C Pulsed Diode Forward Current A PD


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PDF AO4918 AO4918 AO4918L
Not Available

Abstract: No abstract text available
Text: APT40M35JVFR 400V Ω 93A 0.035Ω POWER MOS V® FREDFET S S D G Power MOS V , BODY DIODE D G • Popular SOT-227 Package S MAXIMUM RATINGS Symbol VDSS ID All , 93A @ 25°C 80 340 120 510 Turn-on Delay Time VGS = 15V 20 40 Rise Time VDD = 200V 30 60 ID = 93A @ 25°C 75 115 RG = 0.6Ω 14 28 TYP MAX , SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol MIN 93


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PDF APT40M35JVFR OT-227 Cont157) E145592
2004 - APT40M35JVFR

Abstract: No abstract text available
Text: Diode ) 1 VSD UNIT dt 5 t rr Reverse Recovery Time (IS = - 93A , di/dt = 100A/µs , APT40M35JVFR 400V 0.035 93A POWER MOS V® FREDFET S S Power MOS V® is a new , ® · Faster Switching · Avalanche Energy Rated · Lower Leakage · FAST RECOVERY BODY DIODE D , 25V 2400 3360 f = 1 MHz 1070 1605 VGS = 10V 710 1065 VDD = 200V ID = 93A @ , 30 60 ID = 93A @ 25°C 75 115 RG = 0.6 14 28 TYP MAX Input Capacitance


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PDF APT40M35JVFR OT-227 E145592 APT40M35JVFR
2005 - AO4918A

Abstract: AO4918AL
Text: Reverse Recovery Time IF= 9.3A , dI/dt=100A/µs 23.5 28 ns Qrr Body Diode + Schottky , use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to , 9.3A RDS(ON) < 14.5m RDS(ON) < 16m Q2 VDS(V) = 30V ID=8.5A <18m (VGS = 10V) <27m (VGS = 4.5V , TA=25°C Pulsed Diode Forward Current A PD Symbol VDS TA=70°C TA=70°C Junction and , rating. F. The Schottky appears in parallel with the MOSFET body diode , even though it is a separate


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PDF AO4918A AO4918A AO4918AL AO4918AL
2001 - CBVK741B019

Abstract: F011 F63TNR F852 FDS4501H FDS9953A L86Z
Text: superior switching performance. · Q1: N-Channel 9.3A , 30V RDS(on) = 18 m @ V GS = 10V RDS(on) = , 27 10 27 61 64 20 40 27 21 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current V SD Drain-Source Diode Forward V GS = 0 V, IS = 2.1 A (Note 2) Voltage V GS = 0 V, IS = ­2.1 A (Note 2) Q1 Q2 , , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current


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PDF FDS4501H CBVK741B019 F011 F63TNR F852 FDS4501H FDS9953A L86Z
irfv120

Abstract: IRFY340 IRFY130 IRFY140 IRFY240 ED 78A IRFY430 IRFY440 IRFY9120 IRFY9130
Text: = -5.8A — — 0.36 ID - - 9.3A IRFY9140 — — 0.21 ID = -8.2A VGS = -10V — — 0.24 , - 9.3A vgs = -10v, IRFY9140 31 — 60 id = -13A vds = 0.5 x vds max- IRFY9240 28 — 60 id -7.7A , 2.0 — 12.5 id - 5.5A IRFY9120 1.3 — 4.7 "d - -5.3A IRFY9130 1.0 — 7.1 id = - 9.3A vgs , IRFY9130 2.0 — 21 ID = - 9.3A VQS = -iov, IRFY9140 7.0 — 35.2 Id = -13A VDS = VDS max- * 0.8 , €” — 60 VDD = -50V, ID = -5.3A, RG = 7.50 IRFY9130 — — 60 Vdd = -50V, Id = - 9.3A , Rg = 7.50


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PDF O-257AB IRFY9140 IRFY9240 IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY340 IRFY430 irfv120 IRFY340 IRFY130 IRFY140 IRFY240 ED 78A IRFY430 IRFY440 IRFY9120 IRFY9130
2007 - 1608X7R

Abstract: MAX5092 MAX5092EVKIT MAX5093 1608X7R1C105K GRM32CR72A105K
Text: IC with the MAX5092A. To evaluate the MAX5093_, the addition of an external Schottky diode is , installed (SMB) Recommended diode : 2A, 100V Schottky diode Diodes Inc. B2100 or equivalent C6 D1 , /MAX5093B/ 93A General Description Evaluates: MAX5092B/92A/MAX5093B/ 93A MAX5092 Evaluation Kit , , minus a diode drop, *FOR OPTIONAL IQ TEST, REPLACE THE WIRE BETWEEN PS1 AND VIN WITH AN AMMETER , 3 Evaluates: MAX5092B/92A/MAX5093B/ 93A 6) Connect dummy load between the VOUT and GND


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PDF MAX5092 MAX5092B, 250mA MAX5092, MAX5092B/92A/MAX5093B/93A 1608X7R MAX5092EVKIT MAX5093 1608X7R1C105K GRM32CR72A105K
1999 - Not Available

Abstract: No abstract text available
Text: =-9.3 A , VDD =-10V, RGS =25 Reverse diode dv/dt IS =- 9.3A , VDS =-16V, di/dt=200A/µs, Tjmax =150°C , =- 9.3A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for , Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode , | = |lD |, diF /dt=100A/µs Qgs Qgd Qg VDD =-15V, ID =- 9.3A - -3.8 -15.6 -33.6 -1.6 -5.7 -23.4 -50.4 - nC VDD =-15V, ID =- 9.3A , VGS =0 to -4.5V V(plateau) VDD =-15V, ID =- 9.3A V


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PDF BSO203SP SIS00062 Q67042-S4009
2000 - Not Available

Abstract: No abstract text available
Text: · · · · · 9.3A , 80V, RDS(on) = 0.21 @VGS = 10 V Low gate charge ( typical 4.7 nC) Low Crss ( typical , Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25 , 23 370 35 70 6.1 - ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 9.3 A Drain-Source Diode Forward Voltage Reverse Recovery


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PDF FQB9N08L FQI9N08L FQB9N08LTM O-263
2000 - Not Available

Abstract: No abstract text available
Text: · · · · 9.3A , 80V, RDS(on) = 0.21 @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical , Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation , 7.7 - ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 9.3 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse


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PDF FQB9N08 FQI9N08 FQB9N08TM O-263
2009 - RB050L-60

Abstract: RB050L60 diode sod 106 RB050L
Text: Schottky barrier diode RB050L-60 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 4.2 0.1±0.02 0.1 5.0±0.3 3 1.2±0.3 4 4.5±0.2 Features 1)Small power mold type. (PMDS) 2)Low IR 2.0 2.6±0.2 PMDS 3)High , R CHARACTERISTICS 90 0.5 0.49 0.48 0.47 AVE:0.4884V 80 70 60 AVE25. 93A 50 40 , Io 0V 7 4.5 0.5 REVERSE POWER DISSIPATION: PR (W) Data Sheet t DC T 5 4


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PDF RB050L-60 OD-106 R0039A RB050L-60 RB050L60 diode sod 106 RB050L
2000 - Not Available

Abstract: No abstract text available
Text: · · · · 9.3A , 80V, RDS(on) = 0.21 @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical , Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation , 7.7 - ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 9.3 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse


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PDF FQB9N08 FQI9N08 FQI9N08 FQI9N08TU O-262
2000 - Not Available

Abstract: No abstract text available
Text: · · · · · 9.3A , 80V, RDS(on) = 0.21 @VGS = 10 V Low gate charge ( typical 4.7 nC) Low Crss ( typical , Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25 , 23 370 35 70 6.1 - ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 9.3 A Drain-Source Diode Forward Voltage Reverse Recovery


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PDF FQB9N08L FQI9N08L FQI9N08L FQI9N08LTU O-262
2004 - SHDC226309

Abstract: IRFY9130 SHD226309
Text: , RISE TIME ID = - 9.3A , TURN OFF DELAY TIME RG = 7.5, FALL TIME VGS = -10V DIODE FORWARD VOLTAGE TC = 25°C, IS = - 9.3A , VGS = 0V REVERSE RECOVERY TIME TJ = 25°C, IS = -9.3 A, di/dt = -100A/µsec , SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 1.0 mA GATE TO SOURCE ON-STATE VOLTAGE VGS = -10V, ID = - 9.3A , VDS = 0.5 x VDS Max. GATE DRAIN CHARGE VGS = -10V, ID = - 9.3A , VDS = VDS Max. x 0.8 STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = -10V, ID = -5.8A VGS = -10V, ID = - 9.3A GATE THRESHOLD VOLTAGE VDS =


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PDF SHD226309 IRFY9130 SHDC226309 SHDC226309 SHD226309
2000 - Not Available

Abstract: No abstract text available
Text: · · 9.3A , 80V, RDS(on) = 0.21 @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 13 pF , Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 55 7.4 , ) - 2.8 28 9 17 5.9 1.5 2.6 15pp 65 28 45 7.7 - ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7.4 A Drain-Source Diode Forward Voltage


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PDF FQD9N08 FQU9N08 FQU9N08TU O-251 FQU9N08
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