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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358CDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C

diode GG 71 Datasheets Context Search

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transistor A431

Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a DM01B 20C26 SAC42 L29a
Text: Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [ 71 â , diode ;Pt-300mW. 34 35 36 4JD12X010 4JD12X011 4JD12X012 11 11 11 N-PL N-PL N-PL Si Si Si L29a L27 L28 , -20V. Darlington Amp; hFE-7.0k-15k typ;Pt-320mW;Zin-650k;BVCEO-20V. MOS FET has interacted over Voltaae clamp diode ;Pt 1.8W(Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B» DM03B* 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 , 97 98 99 MHM1201 MHM2001 MHM201 1 11 11 11 N-PL N-PL N-PL s s s T047 R89c R89a GG GG Pt-260mW; VCB0


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 MA3232 UD1001 A431 transistor FT4017 MT42a DM01B 20C26 SAC42 L29a
Not Available

Abstract: No abstract text available
Text: No. AC GG LC Function Pin No. AC GG LC Function Pin No. AC GG LC , B3 A1 B2 C2 B1 C1 D2 D1 E3 E2 E1 F2 59 60 61 62 63 64 65 66 67 68 69 70 71 , 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 X1 X2 X3 X4 X5 X6 X7 , VCC + 0.5V Clamp diode current per pin, lK (see Note 2) ±18mA Static discharge voltage (HMB), V , CO CO CO CO CO CO CO LC AC GG LC AC GG AC Military (-55°C to +125°C) (10MHZ


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PDF PDSP16330/A/B PDSP16330 20MHz. 10MHz PDSP16330A) 25MHz PDSP16330) MILSTD-883 10MHZ
diode GG 71

Abstract: Stand Alone FFT Processor diode GG 79 diode GG 64 l3915 m15m0 PDSP16340 PDSP16330A PDSP16330 PDSP16116
Text: Copyrighted By Its Respective Manufacturer PDSP16330/A/B PIN FUNCTION Pin No. AC GG LC Function Pin No. AC GG LC Function Pin No. AC GG LC Function F3 91 1 M7 L9 23 29 YO A9 59 57 X1 G3 92 2 M6 L10 24 30 , 13 FORM G11 39 41 P0 A4 71 69 X13 L2 8 14 Y15 G9 40 42 P1 B4 72 70 X14 L3 9 15 Y14 F9 41 43 P2 A3 73 71 X15 K4 10 16 Y13 F11 42 44 P3 A2 74 72 CLK L4 11 17 Y12 E11 43 45 P4 B3 75 73 OVR J5 12 18 , €ž -0.5V to VCC + 0.5V Clamp diode current per pin, lK (see Note 2) ±18mA Static discharge voltage (HMB


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PDF ds3884 PDSP16330/A/B HB3923-1) PDSP16330 20MHz. 10MHz 10MHZ diode GG 71 Stand Alone FFT Processor diode GG 79 diode GG 64 l3915 m15m0 PDSP16340 PDSP16330A PDSP16116
Not Available

Abstract: No abstract text available
Text: PIN FUNCTION Pin No. AC GG LC Function Pin No. AC GG LC Function Pin No. AC GG LC Function F3 G3 G1 G2 F1 H1 H2 J1 K1 J2 L1 K2 K3 L2 L3 K4 L4 J5 , 65 66 67 68 69 70 71 72 73 74 75 76 81 82 83 84 85 86 87 88 89 90 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 , voltage, VM -0.5V to VCC + 0.5V Clamp diode current per pin, lK(see Note 2) ±18mA Static discharge


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PDF HB3923-1) PDSP16330 20MHz. PDSP16330 PDSP16330A PDSP16330B
Not Available

Abstract: No abstract text available
Text: changes on the rising edge of CLK, P11 is the MSB. The weighting of P11 is 71 radians. Output Enable , . AC GG Function Pin No. AC GG Function Pin No. AC GG Function F3 G3 G1 , D1 E3 E2 E1 F2 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 81 82 , Clamp diode current per pin, lK(see Note 2) ±18mA Static discharge voltage (HMB), V 500V Storage , 1200mW Junction temperature 150X Package Type AC GG 0 jc°C /W 0ja°C /W 12 12 36 35


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PDF PDSP16330/A/B HB3923-1) PDSP16330 20MHz. PDSP16330A PDSP16330B 10MHZ 20MHZ 25MHZ
Legrand transformer

Abstract: Legrand* fuses 18KW motor 140 10 aM LEGRAND fuse legrand 390 61 legrand fuse 123 10 legrand bs 3535 115 to 24 2.3 va transformer 18 KW motor
Text: to 4 1 to 4 4·5 1 to 16 1 to 25 6·5 2 6425 71 1250 150 144 179 122 , 900 9 000 71 140 200 470 620 1 100 1 200 2 800 4 300 4 800 8 200 64 130 180 440 , of the calculation. * LED = Light Emitting Diode protection of transformers, primary and , 4 6 8 8 10 12 16 20 25 40 63 100 T T T gG gG gG gG gG gG gG gG gG gG gG gG gG gG gG gG gG gG gG gG Fuse Curve A Type C MCB 40 1 1 1·6 2 4 4 4 6


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2006 - 140M-C-AFA11

Abstract: 100-K05ZJ10 140M-C-PEK12 140M-C2E-C10 140M-C2E-B10 140M-C2E-C25 Allen-Bradley 100-k12 140M-C-W454 100-k05 140M-C2E-B16
Text: SAFETY MARGIN FOR OVER VOLTAGE IEC/EN 60947: MCS MINI 24 V 100 % 85 % - 110 % 71 % - 125 % VOLTAGE 26,4 V 110 % 20,4 V 85 % SAFETY MARGIN FOR UNDER VOLTAGE 71 % CONTACT , 7-1 /2 575V 3 5 7-1 /2 N.O. N.C. Pkg. Qty.I Cat. No. 1 0 1 100-K0510 0 , 2 2 3 460V 3 5 3 7-1 /2 7-1 /2 1 100-K05300 2 1 100-K05200 0 , 3 3 7-1 /2 7-1 /2 0 1 104-K1202 I Used for electrical interlocking The Cat


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PDF 193-K 100-K 140-M MCS-SG001A-EN-P 140M-C-AFA11 100-K05ZJ10 140M-C-PEK12 140M-C2E-C10 140M-C2E-B10 140M-C2E-C25 Allen-Bradley 100-k12 140M-C-W454 100-k05 140M-C2E-B16
2007 - Allen-Bradley 100-k12

Abstract: 140M-C-ASA11 140m-c-wte 100-KFSD250 100-K09 140M-C-AFA11 100-KFC22 140M-C-WBE 100-KFSV55 100-K05ZJ10
Text: 5 20 3 5.5 5.5 5.5 3/4 2 3 3 7-1 /2 7-1 /2 May be ordered in , 230V 1-1/2 2 2 2 3 460V 3 5 3 7-1 /2 7-1 /2 1 100-K05300 2 1 , 5.5 - - 3 3 7-1 /2 7-1 /2 0 1 104-K1202 Used for electrical interlocking , ZQ ZJ ZD ZS ZA ZT with Integrated Diode - DJ - - - 600 - , 43 53 24 34 44 54 51 61 52 62 53 61 54 62 53 63 54 64 51 61 71 81 52 62 72 82 53 61 71 81


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PDF 100-K 100-K, 700-K, 193-K, 100/104-K 700-K 193-K 100/104-K 100K-SG001A-EN-P Allen-Bradley 100-k12 140M-C-ASA11 140m-c-wte 100-KFSD250 100-K09 140M-C-AFA11 100-KFC22 140M-C-WBE 100-KFSV55 100-K05ZJ10
DIODE SJ 98

Abstract: DARLINGTON 3A 100V npn array CA3036 silicon epitaxial mesa diode microwave switch V405T OC7420 MT995 MT869 MT726 A431
Text: .Om0 300 0 1Op0 PE0 T092 B 70# BCW52 300m 200MSA 50 30 200m 20 m0 150 tA 5.Op0 A X55c 71 , 10 0 4.5D0 R97a A 78 QD400- 71 * 300m 300M5A 1.7m ss 25 25 60 20m 1.On0 5.00 10u0 50 tA 4Ou0 3 , 300m 400MSA 2.0m S.l 10 10 3 0 200m 1Ou0 .500 3Om0 20 tA 6.5p0 PE T018 0 86 ÜD402- 71 * 300m , also) [ 71 — Maximum $ - Cob §- C. (FET'sonly) §- Ron (FET'sonly) # - Pulsed M A — Ambient C , transistors and a 1N914 diode ;Pt-300mW. 34 35 36 4JD12X010 4JD12X011 4JD12X012 11 11 11 N-PL N-PL N-PL Si Si


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 DIODE SJ 98 DARLINGTON 3A 100V npn array CA3036 silicon epitaxial mesa diode microwave switch V405T OC7420 MT995 MT869 MT726 A431
Legrand transformer

Abstract: legrand 390 61 18 KW motor legrand fuse 123 10 Legrand* fuses bs 3535 diode GG 26 legrand fuse 140 10 aM LEGRAND fuse 18KW motor
Text: to 25 6·5 2 6425 71 1250 150 144 179 122 149 7 15·6 48 2·8 , 71 140 200 470 620 1 100 1 200 2 800 4 300 4 800 8 200 64 130 180 440 570 1 000 1 , . * LED = Light Emitting Diode protection of transformers, primary and secondary circuits Minimum , 63 100 T T T gG gG gG gG gG gG gG gG gG gG gG gG gG gG gG gG gG gG gG gG , 50 2 4 6 8 8 10 12 16 20 25 110 V T T T gG gG gG gG gG gG gG gG gG gG


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y12 t 953

Abstract: No abstract text available
Text: E2 E1 F2 GG 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 81 82 , Pythagoras Processor Package Type: AC84/GG100 Pin No.4 AC/ GG A1/76 A2/74 A3/73 A4/ 71 A5/68 A6 , . The weighting of P 1 1 is 71 radians. Output Enable: O utput Enable for M Port. The M Port is in a , FUNCTION Pin No. AC GG Function Pin No. AC GG Function F3 G3 G1 G2 F1 H1 H2 J1 , VCC + 0.5V r & Clamp diode current per pin, lK (see Note 2) ± 1 8mA Static discharge voltage


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PDF DS3240 PDSP16330/A MIL-STD-883 PDSP16330 20MHz. y12 t 953
1995 - Not Available

Abstract: No abstract text available
Text: CO CO CO CO CO CO CO LC AC GG LC AC GG AC Military (-55°C to +125°C) (10MHZ (10MHZ (10MHZ (20MHZ (20MHZ (20MHZ (25MHZ - LCC Package) PGA Package) GG Package) LCC Package) PGA Package) GG Package) PGA Package) Industrial (-40°C to +85°C) PDSP16330 PDSP16330 PDSP16330 PDSP16330A PDSP16330A PDSP16330A PDSP16330B 6 BO BO BO BO BO BO BO LC AC GG LC AC GG AC 10MHZ 10MHZ 10MHZ 20MHZ 20MHZ 20MHZ 25MHZ - LCC Package PGA Package


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PDF PDSP16330/A/B 7023s 10MHz 84-pin PDSP16112 PDSP16116 PDSP16318 PDSP16340 PDSP16350 PDSP16510A
2006 - diode ED 84

Abstract: No abstract text available
Text: .0x19.0mm Package Efficiency to 90% POWERLINE w ne for ! ted es oon s gg su ed ot tinu is n on es isc eri e d , /DC-Converter RP60-S_DE Series w ne for ! ted es oon s gg su ed ot tinu is n on es isc eri e d is s ll b , Coefficient Transient Response (25% load step change) Over Voltage Protection Zener diode clamp (only single , . 1000pF max. 200kHz typ. w ne for ! ted es oon s gg su ed ot tinu is n on es isc eri e d is s ll b Th t , -4-4 EN61000-4-5 EN61000-4-6 Dimensions MTBF (see note 2) -25°C to + 71 °C(with derating) +95°C -25°C to


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PDF RP60-123 RP60-1205SE RP60-1212SE RP60-1215SE RP60-2405SE RP60-2412SE RP60-2415SE RP60-4805SE RP60-4812SE RP60-4815SE diode ED 84
transistor a640

Abstract: transistor A608 2SC632 2SC634 transistor 2sC632 Pt-100W L14B CA3036 DM02B FV918
Text: .) 40 15 4.5 100m 4OOn§0 .400 3Om0 71 t# 4.0pP DPE u5b 2# FK918 175m 600MSA 1.0m SJ 30 15 3.0 , 10 0 850f PE0 R103a 71 2N541A 200m 8.0MSA 1.2m ss 15 15 2.0 25m 5OOn0 5.00 1.0m 80 A 2Op0 TO , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [ 71 â , diode ;Pt-300mW. 34 35 36 4JD12X010 4JD12X011 4JD12X012 11 11 11 N-PL N-PL N-PL Si Si Si L29a L27 L28 , -20V. Darlington Amp; hFE-7.0k-15k typ;Pt-320mW;Zin-650k;BVCEO-20V. MOS FET has interacted over Voltaae clamp diode


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor a640 transistor A608 2SC632 2SC634 transistor 2sC632 Pt-100W L14B CA3036 DM02B FV918
1995 - Not Available

Abstract: No abstract text available
Text: be connected. GG pin 77 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 5 Description AC pin Function GG pin AC pin B2 C2 B1 C1 D2 D1 E3 E2 E1 F2 F3 G3 , L11 Function GG pin AC pin C7 C6 C5 C4 C3 C2 C1 C0 OED OEC S2 S1 S0 MS ASI1 ASI0 , C10 A11 Function GG pin AC pin A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 CEA B15 B14 B13 B12 B11 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73


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PDF PDSP16318/13618A DS3708 PDSP16318/PDSP16318A HB3923-1) PDSP16318 20-bit 20MHz PDSP16318As PDSP16112A
1996 - PDSP16330

Abstract: m15m PDSP16350 PDSP16330A AC84 PDSP16318 PDSP16116 PDSP16112 DS3884 diode GG 26
Text: 7FFF . . . 0001 0000 8000 . . . FFF 3 PDSP16330/A/B PIN FUNCTION Pin No. AC GG Function Pin No. AC GG Function Pin No. AC F3 G3 G1 G2 F1 H1 H2 J1 K1 J2 L1 K2 K3 , A5 B5 C5 A4 B4 A3 A2 B3 A1 B2 C2 B1 C1 D2 D1 E3 E2 E1 F2 GG Function 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 81 82 83 84 85 86 87 88 , Clamp diode current per pin, IK (see Note 2) ±18mA Static discharge voltage (HMB), VSTAT 500V


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PDF PDSP16330/A/B HB3923-1 DS3884 PDSP16330 20MHz. 10MHz m15m PDSP16350 PDSP16330A AC84 PDSP16318 PDSP16116 PDSP16112 diode GG 26
Not Available

Abstract: No abstract text available
Text: : Both GND pins must be connected GG pin AC pin 77 82 83 84 85 86 87 88 89 90 91 92 , H2 J1 K1 J2 L1 Function GG pin AC pin D7 D8 D9 D10 GND VCC D11 D12 D13 D14 D15 C15 , K9 L11 Function GG pin C7 C6 C5 C4 C3 C2 C1 CO OED OEC S2 S1 SO MS ash ASI0 , CEA B15 B14 B13 B12 B11 GG pin AC pin 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 Device Pinout for ceramic 84 - pin PGA (AC84) and ceramic GFP (GG100


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PDF DS3708 PDSP16318/PDSP16318A PDSP16318 20-bit 20MHz PDSP16318As PDSP16112A 256ps. PDSP16318/13618A PDSP16318/C0/AC
Not Available

Abstract: No abstract text available
Text: : Both GND pins must be connected. PDSP16112. This input is latched by the rising edge of CLK. GG , Function GG pin AC pin B2 C2 B1 C1 D2 D1 E3 E2 E1 F2 F3 G3 G1 G2 F1 H1 H2 J1 K1 J2 L1 , L4 J5 K5 L5 K6 J6 J7 L7 K7 L6 L8 K8 L9 L10 K9 L11 Function GG pin AC pin C7 C6 , H11 F10 G10 G11 G9 F9 F11 E11 E10 E9 D11 D10 C11 B11 C10 A11 Function GG pin AC pin , 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 B10 B9 A10 A9


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PDF DS3706-2 HB3923-1) PDSP16318 20-bit 20MHz PDSP16318As PDSP16112A 256ps. PDSP16318/13618A PDSP16318/CO/AC
UD1001

Abstract: FT4017 MA3232 transistor A431 CA3036 DM01B UC850 L0NA UC340 DM02B
Text: Radiation Resistant Device (See above also) [ 71 — Maximum $ - Cob §- C. (FET'sonly) §- Ron (FET'sonly , 16V;IC 1.4A;Pt 40W;hFE 32. Contains 3-2N1613 transistors and a 1N914 diode ;Pt-300mW. 34 35 36 , -7.0k-15k typ;Pt-320mW;Zin-650k;BVCEO-20V. MOS FET has interacted over Voltaae clamp diode ;Pt 1.8W(Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B» DM03B* 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b Pd 225mW(each , 97 98 99 MHM1201 MHM2001 MHM201 1 11 11 11 N-PL N-PL N-PL s s s T047 R89c R89a GG GG Pt-260mW; VCB0


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V UD1001 FT4017 MA3232 transistor A431 CA3036 DM01B UC850 L0NA UC340 DM02B
transistor k1502

Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 darlington 12V 6.2A 2N5513 K1501 p1027
Text: 3.5m 3.5m 3.5m 60u 60u 60u 16p 16p 1 6d 2.0m 2.0m 2.0m 150S 150S 150S § i § T071 T071 T071 70 71 , Field Effect Transistor Radiation Resistant Device (See above also) [ 71 — Maximum $ - Cob §- C , 20 min. VCBO 32V;VCE0 16V;IC 1.4A;Pt 40W;hFE 32. Contains 3-2N1613 transistors and a 1N914 diode ;Pt , -7.0k-15k typ;Pt-320mW;Zin-650k;BVCEO-20V. MOS FET has interacted over Voltaae clamp diode ;Pt 1.8W(Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B» DM03B* 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b Pd 225mW(each


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 darlington 12V 6.2A 2N5513 K1501 p1027
A1381 transistor

Abstract: 2N5036 CA3036 MA3232 NF Amp NPN Silicon transistor TO-3 20C26 2N5034 package 2N5034 L29a 2N5035
Text: T03 T03 TO 3 C0 C0 C0 71 72 73 156-083 156-084 156-104 660m 660m 660m 115 0 115 0 115 0 IJ IJ IJ 15 , also) [ 71 — Maximum $ - Cob §- C. (FET'sonly) §- Ron (FET'sonly) # - Pulsed M A — Ambient C , transistors and a 1N914 diode ;Pt-300mW. 34 35 36 4JD12X010 4JD12X011 4JD12X012 11 11 11 N-PL N-PL N-PL Si Si , -20V. Darlington Amp; hFE-7.0k-15k typ;Pt-320mW;Zin-650k;BVCEO-20V. MOS FET has interacted over Voltaae clamp diode ;Pt 1.8W(Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B» DM03B* 11 11 11 P-MOS P-MOS P-MOS L1 8b L1


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V A1381 transistor 2N5036 CA3036 MA3232 NF Amp NPN Silicon transistor TO-3 20C26 2N5034 package 2N5034 L29a 2N5035
ST25C transistor

Abstract: TRANSISTOR st25a TRANSISTOR 2n906 ST25A transistor TRANSISTOR st25c transistor 2N905 2N904 2N906 DIODE SJ 98 ST25A
Text: 350nb 100nb 40 40 47 2.0 2.0 1.8 8.0p 6.0p 1.4p MEt MEA PDA u5 u5 u2 70 71 72 2N908T 2N3128 2N3129 , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [ 71 â , diode ;Pt-300mW. 34 35 36 4JD12X010 4JD12X011 4JD12X012 11 11 11 N-PL N-PL N-PL Si Si Si L29a L27 L28 , -20V. Darlington Amp; hFE-7.0k-15k typ;Pt-320mW;Zin-650k;BVCEO-20V. MOS FET has interacted over Voltaae clamp diode ;Pt 1.8W(Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B» DM03B* 11 11 11 P-MOS P-MOS P-MOS L1 8b L1


OCR Scan
PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 ST25C transistor TRANSISTOR st25a TRANSISTOR 2n906 ST25A transistor TRANSISTOR st25c transistor 2N905 2N904 2N906 DIODE SJ 98 ST25A
NS1000 n

Abstract: CA3036 BVCEO-90V transistor A431 2CY38 QD403-78 QD402-78 QD400-78 NS1862 UD1001
Text: SA 32 32 1? 500m 20u 6.00 1Om0 15 A A T05 71 # 2CY39 4 10m 1.5MS 3.3m SA 64 64 1? 500m 20u , Radiation Resistant Device (See above also) [ 71 — Maximum $ - Cob §- C. (FET'sonly) §- Ron (FET'sonly , 16V;IC 1.4A;Pt 40W;hFE 32. Contains 3-2N1613 transistors and a 1N914 diode ;Pt-300mW. 34 35 36 , -7.0k-15k typ;Pt-320mW;Zin-650k;BVCEO-20V. MOS FET has interacted over Voltaae clamp diode ;Pt 1.8W(Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B» DM03B* 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b Pd 225mW(each


OCR Scan
PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 NS1000 n CA3036 BVCEO-90V transistor A431 2CY38 QD403-78 QD402-78 QD400-78 NS1862 UD1001
2000 - gc 5.5V 1.0F

Abstract: AN 17823 17823 OLED driver IC MXED101 MXED101DI MXED101TP 5.5V 1.0f GC
Text: Organic Light Emitting Diode (OLED) displays. Each of the 192 current outputs is designed to act as a , LE CLKEX STBY SDM(1-0) Output Mapping/ Current Programming GG GA(2-0) GB(2-0) GC(2-0 , reliability. Electrical Characteristics Parameter Logic Supply Voltage Analog Supply Voltage GG Voltage , (5-0) I CLKEX I TGR I GG 4 I I A Description Power supply for the 192 , is GG /RG, with a peak base current level of 1.455mA. This input is internally pulled to a logic low


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PDF MXED101 192-Channel MXED101TP) MXED101DI) MXED101 192-output DS-MXED101-R9 gc 5.5V 1.0F AN 17823 17823 OLED driver IC MXED101DI MXED101TP 5.5V 1.0f GC
transistor A431

Abstract: CA3036 A431 transistor a106 transistor PET3001 GME3001 d16P4 AT344 MA3232 A431
Text: 45 7 0 30m 250n 5.00 1Ou0 400 tA 7.0piZl PL0 T018 A 71 V220Î 300m 1.7m 5.1 15 10 40 5n0 5.00 , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [ 71 â , diode ;Pt-300mW. 34 35 36 4JD12X010 4JD12X011 4JD12X012 11 11 11 N-PL N-PL N-PL Si Si Si L29a L27 L28 , -20V. Darlington Amp; hFE-7.0k-15k typ;Pt-320mW;Zin-650k;BVCEO-20V. MOS FET has interacted over Voltaae clamp diode ;Pt 1.8W(Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B» DM03B* 11 11 11 P-MOS P-MOS P-MOS L1 8b L1


OCR Scan
PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 CA3036 A431 transistor a106 transistor PET3001 GME3001 d16P4 AT344 MA3232 A431
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