The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CUZ30V CUZ30V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC
CUZ5V6 CUZ5V6 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USC
CUZ16V CUZ16V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC
MUZ6V8 MUZ6V8 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USM
CEZ6V8 CEZ6V8 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC
CUZ8V2 CUZ8V2 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC

diode F4 3J Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - ifs75b12n3e4_b32

Abstract: No abstract text available
Text: MIPAQTMbase Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQTMbase module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense shunt ! " , ) ! *OB2 K *OB2 3 H 3J J H / # 6 3 *& ) H!&'J 2:; ) = 150 # *OB2 K *OB2 3 H H 3J J 150 2:; ) 2:; ) 2:; ) 135 = !P' ) ! !P' ) .! !P' ) ! !P' , ) ! 6 *OB2 K 3 *OB2 H H J 3J 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 !&' x!y 3


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PDF IFS75B12N3E4 ifs75b12n3e4_b32
302GAL

Abstract: No abstract text available
Text: diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 16-12-2005 GES © by SEMIKRON SEMiX 302GB066HDs Fig. 13 Typ. CAL diode recovered charge 3J !S , , &(- ) '( 7- )5 , &9( ) & &- 2 >2 , '( ) Inverse diode Characteristics Symbol , 4- 82 , '( &(- ) %F% =4- 8F1 3 <&( $ 3J $ M% @LM % '( ) #'#&"PJ&F'<&F&Q 2 PKQ2J O !( F !0 Inverse Diode Thermal characteristics Temperature sensor Mechanical data


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PDF 302GB066HDs 302GB066HDs 302GAL066HDs 302GAR066HDs 302GAL
2006 - Not Available

Abstract: No abstract text available
Text: 302GB066HDs Fig. 13 Typ. CAL diode recovered charge 3J * !S ' !S ' This is an , , '( ) Inverse diode Characteristics Symbol Conditions IGBT 3 $ A D #E?E % F % F , , '( &(- ) , '( &(- ) $@ 4- 82 , '( &(- ) %F% =4- 8F1 3 <&( $ 3J $ M% @LM % '( ) #'#&"PJ&F'<&F&Q 2 PKQ2J O !( F !0 Inverse Diode &'() " *% + % ,&(-) %. / 0 1 2 3 / & , impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 CAL diode forward characteristic


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PDF 302GB066HDs
2007 - FF200R12KT3

Abstract: No abstract text available
Text: C-Serien Modul mit schnellem Trench/Feldstop IGBT3 und EmCon High Efficiency Diode 62mm C-series module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter , ) 3J N - &'( ) *+, &'( ) *+, Y 65 3 J 3 L L - &'( ) *+, &'( ) *+, S 3 > 3 >* L L 4. ) 83 -./ ) J -B/ ) X * B6ZZ ) 3J N - &'( ) *+, &'( ) *+, Y 6ZZ 3 , . ) 83 -./ ) J -3 V0 ) O -B/ ) X * -3 D ) >* -DL U&'() B6ZZ ) 3J N % F L, BM5A 4. ) 83


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PDF FF200R12KT3 FF200R12KT3
DIODE 3J

Abstract: No abstract text available
Text: 302GB066HD Fig. 13 Typ. CAL diode recovered charge 3J !S ' !S ' This is an , , '( ) Inverse diode Characteristics Symbol Conditions IGBT 3 $ A D #E?E % F % F , , '( &(- ) , '( &(- ) $@ 4- 82 , '( &(- ) %F% 8F1 3 <&( $ 3J $ M% @LM % '( ) #'#&"PJ&F'<&F&Q 2 PKQ2J O !( F !0 Inverse Diode &'() " *% + % ,&(-) %. / 0 1 2 3 / & , impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 CAL diode forward characteristic


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PDF 302GB066HD DIODE 3J
2006 - Not Available

Abstract: No abstract text available
Text: 302GB066HD Fig. 13 Typ. CAL diode recovered charge 3J !S ' !S ' This is an , , '( ) Inverse diode Characteristics Symbol Conditions IGBT 3 $ A D #E?E % F % F , , '( &(- ) , '( &(- ) $@ 4- 82 , '( &(- ) %F% 8F1 3 <7 $ 3J $ M% @LM % '( ) #'#&"PJ&F'<&F&Q 2 PKQ2J O !( F !0 Inverse Diode &'() " *% + % ,&(-) %. / 0 1 2 3 / & , impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 CAL diode forward characteristic


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PDF 302GB066HD
2012 - diode MARKING CODE 3J

Abstract: No abstract text available
Text: ® RB706F-40 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD , 208 Polarity: See Diagram Weight: 0.006 grams (approx.) Mounting Position: Any Marking: 3J Lead , 0.05 1.0 µA CD 2.0 IF, INSTANTANEOUS FORWARD CURRENT (mA) Diode Capacitance (VR = , ® RB706F-40 WON-TOP ELECTRONICS MARKING INFORMATION RECOMMENDED FOOTPRINT 0.035 (0.90) 3J 3J


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PDF RB706F-40 OT-323, MIL-STD-202, diode MARKING CODE 3J
Pacific Monolithics

Abstract: AT1202 PM-AT1202
Text: TEMPERATURE-SENSING DIODE SMALL SIZE ESD PROTECTION ON INPUTS EASILY CASCADABLE The Pacific Monolithics PM-AT1202 , FREQUENCY (GHz) 7.0 O O 3J O r~ < O 5 o m m T3 lu t < -4 -12 -16 -20 -24 0.50 , ) -1.0 ca m 3J -2.5 I- O (/} (/> 'S 00 12.5 INPUT OR OUTPUT RETURN LOSS m TJ, co co O £e 3 H , O +5 V 100 K< OUTPUT î* S um TArsp \ X _ TEMP ▼ DIODE T Aâ , ;"ir tfM SHUNT I/O fc- II SHUNT MAIN SERIES ^MAIN 1 1 GND TC GND IN/OUT 1 1 DIODE


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PDF PM-AT1202 PM-AT1202 AT1202 Pacific Monolithics AT1202
diode F4 3J

Abstract: No abstract text available
Text: ) lAM RM ono m uivoiem ) ifi tx f4 CASE UL <$14 : Maximum Ratings and Characteristics · : A b s , ) RtH(c-l) Test C onditions Transistor Diode With Thermal Compound Min Typ Max 0.5 2.0 0 , VE W (v) B & 7 IJ - « M K H im /± Forward V o lta g e o f Free W h eeling Diode O-s , ( Diode ) B- If 4# IK in P N J> rt» m V s H p 3- ) S' & -H ia g 1J 2 +! a S s -H M , » S rS ., Si U '<\ ^ o ^ tu I -kr ii v I m u m n S < ? . >V R , ^ a 3j


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PDF E82988 diode F4 3J
TG12N60C3D

Abstract: g12n60c3d TG12N60 g12n G12N60
Text: Low Conduction Loss · Hyperfast Anti-Parallel Diode 210ns at T j = 150°C Description The , °C. The IGBT used is the development type TA49123. The diode used in antiparallel with the IGBT is the , = 1 1 0 °C . Average Diode Forward Current at 110 , Fall Tim e Turn-On Energy Turn-O ff Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time , Resistance R6JC IGBT Diode NOTE: 3. Turn-O ff Energy Loss (E q ff ) ¡s defined as the integral of


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PDF HGTG12N60C3D 210ns HGTG12N60C3D TG12N60C3D g12n60c3d TG12N60 g12n G12N60
diode dumper

Abstract: 2SD1630
Text: NPN SILICON DARLINGTON POWER TRANSISTOR 2SD1630 D E S C R IP T IO N The 2SD1630 is a darlington transistor built-in a zener diode at B-C and a dumper diode at E-C. It is suitable for use to operate from IC , Diode at B-C and a Dum per Diode at E-C. · Low Collector Saturation Voltage. A B S O L U T E M A X I M U , issipation-W H -o O -< > Z r~ o X m n > 3J > 3 O H m 3 co H C /J O dT - Forward Bias , < D O O o o r ro 0 > o *1 , 0 r m 2° dj" c n 3! cc 3)3) 3J > gd - i IS) CO _-4


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PDF 2SD1630 2SD1630 01IWVS diode dumper
Not Available

Abstract: No abstract text available
Text: •or - - - 4 A Pulse Drain Reverse Current bnp - - - 16 A Diode , O Ü> “0 m 5 c 3J m o -D □ -D -J ru Ln cd CD a GATE TH R E , -* er O* CD CT —Î ET O > C O o > w m m H m 2 ~o m TOSHIBA 3J Í c 3D m 3J O C /5 T3 m 33 5 c 33 m -H o CORPORATION


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PDF 2SK1913 100fiA 17SSD DD21bfl2
Not Available

Abstract: No abstract text available
Text: ) Tum-off Delay Time nC 120 Vgs = 15V PF Re = 1.60 Fall Time ns SOURCE-DRAIN DIODE , Source Current (Body Diode ) 30 'SM Pulsed Source Current © (Body Diode ) 120 VSD Diode , / / w 3J É 0 D O m 0 5 0 -5 5 1 0 R e v C — — 2^ 31 O Ig Lj m d 3 3 , < _ C1 J < ■\ > ■V H cn O ■at -s| (/> < 3J APT5017SVR 20,000 10,000 , > UJ c c VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAM DIODE FORWARD


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PDF APT5017SVR DD022n
MR876

Abstract: 1N400I MR871 Motorola R05 motorola 160a 1N4933 MR870 MR872 MR874 I636725S
Text: ¡5 S § s 5 s g 5 a j ° s a I s s i i I 7\ 1 t 3 ZJ oo -j o 3J oo ■si DO CO >1 ro 5 3J CO ■vl 2 3J CO at i 0 L) & o; diode , passes thru zero going


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PDF I636725S b3h725S 0077flTb r-05- MR870 MR871 MR872 MR874 MR876 MR876 1N400I Motorola R05 motorola 160a 1N4933
photodiode cd and laser

Abstract: No abstract text available
Text: > - j- © MIRR <15) OFCT - { u ) FOK LD O N (28> 3J - @ GND - { § ) FEB " 2 , * O V3-2 V3-3 V4-1 V4-2 V4-3 F4 -1 V5-1 V5-2 F5-1 F5-2 O S2 S3 S4 O S5 S6 El E2 E3 OV E4 2.0V E5 ÖV f , comparison with the traverse signal. " 15- SONY CXA2521AQ APC Circuit When the laser diode Is


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PDF CXA2521AQ CXA2S21AQ 32PIN QFP-32P-L01 QFP032-P-0707-A 42ALLOY photodiode cd and laser
2013 - Not Available

Abstract: No abstract text available
Text: Doc No. TT4-EA-11772 Revision. 3 Product Standards Zener Diode DZ2S0300L DZ2S030ï , RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1  Marking Symbol: 3J or 3U 0.3 0.6 ï , Rank VZ Marking symbol 2.93 M to 3.08 3U No-rank 2.85 to 3.15 3J Page 1 of 4 , Zener Diode DZ2S0300L Technical Data ( reference ) 200 IF - VF 1.E+00 Mounted on glass , Revised : 2013-07-16 Doc No. TT4-EA-11772 Revision. 3 Product Standards Zener Diode DZ2S030ï


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PDF TT4-EA-11772 DZ2S030ï DZ2J030 UL-94
Logic Level N-Channel Power MOSFET

Abstract: No abstract text available
Text: _ TEST CONDITIONS ISd = 2A lSD = 2A, dlSD/dt= 100A/^s - 115 °CAV Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulse test , SOURCE ON RESISTANCE o c 3J 1 5 o 5 s < c O 3) z o o s > O 5 S O m fn ° o , 5 » Q > e_ O = !§ g -, z o 5 o 3 « o c. g c> z z O -t =10 Q o» *S 3J S u 3


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PDF RFW2N06RLE RFW2N06RLE Logic Level N-Channel Power MOSFET
2013 - Not Available

Abstract: No abstract text available
Text: Doc No. TT4-EA-11539 Revision. 3 Product Standards Zener Diode DZ2J0300L DZ2J030ï , :Level 1 compliant) 1  Marking Symbol: 3J or 3U 0.5 0.7  Packaging Embossed type , 2.93 M to 3.08 3U No-rank 2.85 to 3.15 3J Page 1 of 4 Established : 2009-10-14 Revised : 2013-07-01 Doc No. TT4-EA-11539 Revision. 3 Product Standards Zener Diode DZ2J0300L Technical , -11539 Revision. 3 Product Standards Zener Diode DZ2J0300L Technical Data ( reference ) Rth - t Ct


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PDF TT4-EA-11539 DZ2J030ï UL-94
semikron skim

Abstract: No abstract text available
Text: Modules SKiM 220GD176D Target Data ® #8 #81 ( #1 #8 1 Inverse diode Characteristics Symbol , Inverse diode 8 ; #@@1 E @*5( , @*5( , @ 1/ 1 #8 -) $9 3 /& 9 5 -& */-&, . 5 -& */-&, . 5 , . 11 CAL diode forward characteristic, incl. RCC'+ EE' 3 10-08-2005 RAA © by SEMIKRON SKiM 220GD176D Dimensions in mm 3J J This is an electrostatic discharge sensitive device (ESDS


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PDF 220GD176D 220GD176D semikron skim
2006 - Not Available

Abstract: No abstract text available
Text: / / / /? /? 3 3 A / / C. / F DH DH >. >. 3J " " D? SEMIPACK® 1 Fast Diode Modules SKKD 105F SKMD , SKKD 105F, SKMD 105F, SKND 105F 34 3 <77 ;777 ;+77 ;(77 344 3 <77 ;777 ;+77 ;(77 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm 054 6 +77 / 89 - : 05/3 6 ;7* / 8 & ;<7 = 6 <) >.: ;7*57< ;7*57< " ;7*57< ;7*5;7 ;7*5;7 " ;7*5;7 , rectifier diode thyristor cib rectifier ipm Dimensions in mm . / ;7 . / ) . / )O "


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PDF
6bj7

Abstract: 6bj7 tube diode S2J
Text: 6BJ7 TUNO-SOL TRIPLE DIODE MINIATURE TYPE r - 8 MAX T-6T 1 "I 111" 1 16 MAX ■.MAX GLASS BULB COATED UN I POTENTIAL CATHODE HEATER 6.3 VOLTS 0.45 AMP. AC OR DC ANY MOUNTING POSITION BOTTOM VIEW MINIATURE BUTTON 9 PIN BASE THE 6BJ7 IS A TRIPLE DIODE USING THE 9 PIN MINIATURE , CATHODE # 3j HEATER i 1NTERNAL SH1ELD 2.6 CATHODE »1 TO PLATE HEATER & 1NTERNAL SH1ELD 4.0 Wlà , DIODE SECTION Ef 6.3 Volts / 15 CO £ IO UJ k X UJ 5 5 a. J r


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PDF
Not Available

Abstract: No abstract text available
Text: = +2.4V, V ce = 3.6V ±10 ^A V|n = 0V, vcc = 3.6V ±10 ^A a U) (O o O 3J ro 00 51 a U) (O o O 3J ro oa 00 > 3 www.national.com 3 < 00 00 CM DC O o CT) (/) Q fi oo CM DC O o CT) (/) Q , Transition Times O U) (O o O 3J ro 00 a U) (O o O 3J ro oa oo > 5 www.national.com 5 AC Timing Diagrams , TPPos6 DS101087-19 FIGURE 15. Transmitter LVDS Output Pulse Position Measurement O U) (O o O 3J ro 00 a U) (O o O 3J ro oa oo > 9 www.national.com 9 < 00 00 CM DC O o CT) (/) Q f^ oo CNJ DC O o CT) (/) Q AC


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PDF DS90CR287/DS90CR288A 28-Bit Link-85 DS90CR287 DS90CR288A
2006 - bridge rectifier ic

Abstract: No abstract text available
Text: SEMiX 353GD176HDc power semiconductor power electronics igbt bridge rectifier diode thyristor , Diode %< %<$" %< " *+ , 2) , . *+ , 1() *() 4+) (2) 7) > 4) = ? (+) @A$3%@B9 3- ( = > 4 , SEMIKRON brückengleichrichter leistungselektronik Characteristics Symbol Conditions Inverse Diode , 4) 3J ; 5 >(+ 8 (*) && . (*+ , min. typ. (-0 (-0 (-( )-C *-0 1-7 *2) 21 4+ max , igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module


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PDF 353GD176HDc bridge rectifier ic
2008 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# RB751V-40 Features · · · · Low Voltage, Low Inductance High Current Rectifier Schottky Diode For Power Supply Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) Marking: 3J /5 40 Volts Schottky Barrier Diode · · SOD-323 A B Unit V V mA mA Maximum


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PDF RB751V-40 OD-323
2006 - Not Available

Abstract: No abstract text available
Text: Trench IGBT Modules SEMiX 353GD176HDc Inverse Diode %< %<$" %< " *+ , 2) , 1() *() 4+) (2) 7 , Conditions Inverse Diode < <) < %< *+ 38 5 ) . *+ , . (*+ , . *+ , . (*+ , . *+ , . (*+ , %$$" F $.>L %< *+ 3 &J& 4) 3J ; 5 >(+ 8 (*) && *) =- > & O "+ "7 1 *-+ *+ , . 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4


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PDF 353GD176HDc
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