The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode DLA 5.9 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - Not Available

Abstract: No abstract text available
Text: 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY DLA LAND AND , ) . -0.5 V dc to VCC +0.5 V dc DC input diode current (IIK) . ± 20 mA DC output diode current (IOK , , derate linearly at 12 mW/°C. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO , . 24 MHz STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC


Original
PDF MIL-PRF-38535
2013 - Not Available

Abstract: No abstract text available
Text: 5 6 7 8 9 10 11 PMIC N/A PREPARED BY DLA LAND AND MARITIME COLUMBUS , voltage range (VOUT) . Clamp diode , diode current (per pin) (IOUT) . DC VCC or GND , MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE , test circuit shall be as specified on figure 4. STANDARD MICROCIRCUIT DRAWING DLA LAND AND


Original
PDF MIL-PRF-38535. MIL-PRF-38535
2013 - Not Available

Abstract: No abstract text available
Text: SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY DLA , . -0.5 V dc to VCC +0.5 V dc DC input diode current . ±20 mA DC output diode current , , derate linearly at 12 mW/°C. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO , -S Arlington, VA 22201-2107). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO


Original
PDF MIL-PRF-38535
2011 - 82m21a

Abstract: AUIRF auirf33 AEC-Q101-002 AUIRF3315STRR
Text: Operating Junction and Storage Temperature Range c Peak Diode Recovery dv/dt e c d Thermal , (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time , MOSFET symbol showing the integral reverse G D Ã S p-n junction diode . TJ = 25°C, IS = 43A, VGS =


Original
PDF AUIRF3315S 82m21a AUIRF auirf33 AEC-Q101-002 AUIRF3315STRR
2013 - Not Available

Abstract: No abstract text available
Text: 9 10 11 12 13 14 PMIC N/A PREPARED BY DLA LAND AND MARITIME COLUMBUS, OHIO , ) . DC input diode current (IIK) (VIN < -0.5 V or VIN > VCC + 0.5 V). DC output diode current (IOK) (VOUT < -0.5 V or VOUT > VCC + 0.5 V) . , to 300 mW. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC , MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE


Original
PDF MIL-PRF-38535
2013 - Not Available

Abstract: No abstract text available
Text: 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY DLA , ) . DC input diode current (IIK, for VIN < -0.5 V or VIN > VCC + 0.5 V) . DC output diode current (IOK, for VOUT < -0.5 V or VOUT > VCC + 0.5 V) . DC , DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89953 , MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE


Original
PDF MIL-PRF-38535
2013 - Not Available

Abstract: No abstract text available
Text: PREPARED BY DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http://www.landandmaritime.dla.mil , ) . Clamp diode current (IIC , MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE , test circuit shall be as specified on figure 4. STANDARD MICROCIRCUIT DRAWING DLA LAND AND , of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DLA Land and


Original
PDF 5962-R329-92. MIL-PRF-38535 MIL-PRF-38535
2005 - Not Available

Abstract: No abstract text available
Text: from the DLA Standard Micro-circuit Drawing (SMD) 5962-89477. All devices are manufactured and tested on a MIL-PRF-38534 certified line and are included in the DLA Qualified Manufacturers List, QML , part number and DLA standard microcircuit drawing Manufactured and tested on a MIL-PRF-38534 certified , induced by ESD. Each unit contains a light emitting diode (LED), a threshold sensing input buffer IC , the circuitry and LED from a wide range of over-voltage and over-current transients while the diode


Original
PDF HCPL-576x* MIL-PRF-38534 QML-38534 MIL-PRF-38534. 5968-9404E, 5988-3098EN AV02-3836EN
Not Available

Abstract: No abstract text available
Text: Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , ƒ = 1.0MHz, See Fig.5 Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode ) Pulsed Source Current Ù ––– ––– ––– ––– h Units 82 A 280 VSD (Body Diode ) Diode Forward Voltage trr Reverse Recovery Time , the integral reverse G p-n junction diode . TJ = 25°C, IS = 43A, VGS = 0V f S TJ =


Original
PDF 6384A AUIRF2807
2011 - AEC-Q101-005

Abstract: auirfp064n AEC-Q101-002 AEC-Q101-001 AUFP064N AEC-Q1010
Text: EAR dv/dt TJ TSTG à d 59 A 20 mJ 5.0 Peak Diode Recovery dv/dt e , Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge à Notes: Repetitive , Conditions MOSFET symbol showing the integral reverse p-n junction diode . TJ = 25°C, IS = 59A, VGS = 0V


Original
PDF AUIRFP064N 110Ag AEC-Q101-005 auirfp064n AEC-Q101-002 AEC-Q101-001 AUFP064N AEC-Q1010
2011 - Not Available

Abstract: No abstract text available
Text: Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature , , =1.0MHz VGS = 0V, VDS = 0V to 32V G D S g Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward , symbol G S D h à 640 1.3 94 250 V ns nC p-n junction diode . TJ = 25°C, IS = 95A, VGS = 0V TJ , Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com AUIRL1404S/L 160


Original
PDF AUIRL1404S AUIRL1404L
2011 - AUIRF2807

Abstract: No abstract text available
Text: Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range , VGS = 0V VDS = 25V = 1.0MHz, See Fig.5 f Ãf D G S Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode , integral reverse G S D h à 280 1.2 150 610 V ns nC p-n junction diode . TJ = 25°C, IS = 43A , ) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8


Original
PDF 6384A AUIRF2807 AUIRF2807
2011 - diode DLA 5.9

Abstract: AUF2807
Text: Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating , , See Fig.5 Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode , symbol 280 ­­­ Units A VSD (Body Diode ) Diode Forward Voltage trr Reverse Recovery , Forward Turn-On Time V showing the integral reverse D G p-n junction diode . TJ = 25°C, IS , Source-Drain Diode Forward Voltage 4 40 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage


Original
PDF AUIRF2807 diode DLA 5.9 AUF2807
2014 - Not Available

Abstract: No abstract text available
Text: to + 150 °C Max. Units 62.5 °C/W c g g Continuous Source Current ( Diode , Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage , 0V VDS = -25V ƒ = 1.0MHz,See Fig.5 fà f Diode Characteristics Parameter IS Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward Voltage Reverse , p-n junction diode . TJ = 25°C, IS = -1.7A, VGS = 0V TJ = 25°C,IF = -1.7A di/dt = 100A/μs f


Original
PDF AUIRF7316Q
2011 - asme

Abstract: 200V AUTOMOTIVE MOSFET AUIRF7316QTR
Text: g g Continuous Source Current ( Diode Conduction) Power Dissipation Power Dissipation Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , ,See Fig.5 fà f Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward Voltage Reverse Recovery Time Reverse , nC Conditions MOSFET symbol showing the integral reverse G D à S p-n junction diode . TJ =


Original
PDF 96365B AUIRF7316Q asme 200V AUTOMOTIVE MOSFET AUIRF7316QTR
Not Available

Abstract: No abstract text available
Text: dv/dt TJ TSTG 110 ™ Ù d A 59 A 20 mJ 5.0 ™ Peak Diode , Reverse Transfer Capacitance Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward Voltage Reverse , V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode . TJ = 25 , military grade by the Defense Logistics Agency ( DLA ) of the US Department of Defense, are designed and


Original
PDF AUIRFP064N 110Ag
Not Available

Abstract: No abstract text available
Text: to + 150 °C Max. Units 62.5 °C/W c g g Continuous Source Current ( Diode , Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage , „¦ VGS = 0V VDS = -25V ƒ = 1.0MHz,See Fig.5 fà f Diode Characteristics Parameter IS Continuous Source Current ISM VSD trr Qrr (Body Diode ) Pulsed Source Current (Body Diode ) Diode , p-n junction diode . TJ = 25°C, IS = -1.7A, VGS = 0V TJ = 25°C,IF = -1.7A di/dt = 100A/μs f


Original
PDF 96365B AUIRF7316Q
2013 - 5962R8961002VXC

Abstract: 5962R8961002VHA GDFP1-F10
Text: PREPARED BY RICK OFFICER STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO , -55°C to +125°C Circuit function Voltage reference diode Voltage reference diode 1.2.3 Device , MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE , conditions as specified in MIL-STD-883, method 1019, condition A . STANDARD MICROCIRCUIT DRAWING DLA , MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE


Original
PDF MIL-PRF-38535 GDFP1-F10 5962R8961002VXC 5962R8961002VHA
IRF3205 application

Abstract: No abstract text available
Text: Avalanche Energy e Peak Diode Recovery dv/dt eh TJ Operating Junction and TSTG Storage , Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 64 ISM (Body Diode ) Pulsed Source Current ––– ––– 390 VSD trr Qrr ton (Body Diode ) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge , junction diode . TJ = 25°C, IS = 34A, VGS = 0V TJ = 25°C, IF = 59A di/dt = 100A/μs fh Intrinsic


Original
PDF AUIRFI3205 IRF3205 application
2001 - dla 001

Abstract: No abstract text available
Text: 20mm BIG LAMPS Features DLA /6 SERIES 12 PINS. HIGH LUMINOUS INTENSITY. LOW POWER , on Gallium Phosphide Orange Light Emitting Diode . The Green and Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode . The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode . The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode


Original
PDF DSAA0201 MAR/13/2001 dla 001
2012 - IRF3205 application

Abstract: irf3205 DRIVER Mosfet IRF3205 IRF3205 IR
Text: Diode Recovery dv/dt eh Operating Junction and ch dh Storage Temperature Range Soldering , 1.0MHz fh ns fh D G S nH pF h D Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward , the integral reverse G Ã S p-n junction diode . TJ = 25°C, IS = 34A, VGS = 0V TJ = 25°C, IF = , ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com


Original
PDF AUIRFI3205 IRF3205 application irf3205 DRIVER Mosfet IRF3205 IRF3205 IR
2014 - Not Available

Abstract: No abstract text available
Text: by thermal protection) Rth=50°C/W Maximum continuous diode current (Rth=50°C/W) Electrostatic , clamp voltage Body diode forward voltage Supply current when Off Tj=25°C Supply current when On , military grade by the Defense Logistics Agency ( DLA ) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in


Original
PDF AUIPS7081
2012 - auips7091

Abstract: AUIPS7091G AUIPS7091S AUIPS7091STRL auips AUIPS7091SPBF
Text: dissipation (internally limited by thermal protection) Rth=100°C/W Maximum continuous diode current (Rth , =25°C, Vcc=6.5V Operating voltage range Vcc to Out clamp voltage Body diode forward voltage Supply current , military grade by the Defense Logistics Agency ( DLA ) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in


Original
PDF AUIPS7091 AUIPS7091G AUIPS7091S AUIPS7091STRL auips AUIPS7091SPBF
2011 - IN50C

Abstract: QML-38534 IN50B Dosimeter radiation space MARKING CODE smd R05
Text: April 29, 2013 Radiation Performance Data Package RHD5900, RHD5901, RHD5902 Rev 2.0 DLA SMD , , RADIATION HARDENED Appendix B: Rad Report 2.5 Appendix C: DLA SMD: 5962-10241 3 , Plainview's Radiation Hardness Assurance Plan is DLA Certified to MIL-PRF-38534, Appendix G. GENERAL , , although on chip thermal shutdown is not provided. All inputs and outputs are diode protected. The devices , INFORMATION Model RHD5900-7 RHD5900-S RHD5900-201-1S RHD5900-201-2S RHD5900-901-1S RHD5900-901-2S DLA SMD #


Original
PDF RHD5900, RHD5901, RHD5902 -S-1083" RHD5900: inputD5902-901-1S IN50C QML-38534 IN50B Dosimeter radiation space MARKING CODE smd R05
Not Available

Abstract: No abstract text available
Text: power dissipation (internally limited by thermal protection) Rth=100° C/W Maximum continuous diode , voltage range Vcc to Out clamp voltage Body diode forward voltage Supply current when Off Supply , . Only products certified as military grade by the Defense Logistics Agency ( DLA ) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military , DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s


Original
PDF AUIPS7091
Supplyframe Tracking Pixel