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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode BYW Datasheets Context Search

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1996 - 74l500

Abstract:
Text: HCTL-1100 2 1 2 1 D1 DIODE BYW 98 C3 15 nF 2 2 2 6 10 11 1 2 SENSE D2 DIODE BYW 98 C1 15 nF 13 6 OPTICAL INCREMENTAL ENCODER SIGNALS 10 5 CH , DAC08 1 B3 B2 B1 COMP 16 VLC * D2 DIODE C2 1 2 0.1 µF 1 ­V R2 C4 0.1 , C4 2 2 ­15V VIN 1 R3 1 OHM ­15V +VR ­VR *D1 DIODE 4 U3 L165 B5


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PDF HCTL-1100 M-024 DAC08 REF-01 74l500 74LS00 UF 407 Diode Encoder interface with HCTL-1100 74ls00 circuit diagram M109 B1 diode u1d ON LOGIC OF 74L500 datasheet of ic 74ls00 L165
2007 - of ic 74ls00

Abstract:
Text: 74LS00 1 FROM HCTL-1100 D1 DIODE BYW 98 C3 15 nF 2 9 U1C 74LS00 6 GND U1D 74L500 C2 22 nF 2 2 6 D2 DIODE BYW 98 C1 15 nF 10 11 1 2 SENSE 13 , * D2 DIODE C2 1 2 0.1 µF 1 1 2 1 C4 ­V R2 C4 0.1 µF 3 5.0 K 1 C1 2 0.01 µF , DIODE 4 U3 L165 2 B5 B4 2 0.1 µF U2 B7 B6 OPTICAL INCREMENTAL ENCODER


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PDF HCTL-1100 M-024 REF-01 5964-9816E 5965-3476E of ic 74ls00 74l500 74LS00 datasheet of ic 74ls00 motorola byw 21 bridge rectifier 74ls00 circuit diagram Encoder interface with HCTL-1100 M109 B1 diode u1d ON UF 407 Diode
Not Available

Abstract:
Text: 0.3 0.36 0.9 - 1 V V V 4 V SOURCE DRAIN DIODE Vsd t„ Forward ON Voltage Fig , : Normalized R d s (ON)at 25°C vs. Tem perature Typical Values t1B9L 6223-22 Figure 6a: Typical Diode Behaviour in Figure 6b: Typical Diode Behaviour in 0 -2 0 .6 1 .0 1 .4 v-sd.s/CS;^) Figure , ON STATE. Transitions Us As already seen above the transistors have an in­ trinsic diode between their source and drain that can operate as a fast freewheeling diode in switched mode


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PDF L6201 L6202-L6203 L6201) L6201: L6202: L6203: L6201-L6202-L6203 L6202) L6203)
diode BYW

Abstract:
Text: I.C.; one diode ( BYW 98) is connected be tween each power output pin and ground as well. The following , 0.3 0.36 0.9 4 V V V V Vsens Sensing Voltage SO URC E DRAIN DIODE Vsd Forward ON Voltage , perature Typical Values M89L6 2 2 3 - 2 2 Figure 6a: Typical Diode Behaviour in Figure 6b: Typical Diode Behaviour in Figure 7b: Typical Power Dissipation vs II 6 /1 5 SGS-THOMSON 3 76 , trinsic diode between their source and drain tl can operate as a fast freewheeling diode switched mode


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PDF L6201 L6202-L6203 L6201) L6202: L6203: L6202) L6201-L6202-L6203 L6203) diode BYW fast diode byw 98 200 byw 91 l297 stepper l6203 motor driver MULTIWATT11 L6203 Stepper driver board with L297 L6203
Not Available

Abstract:
Text: u t vo lta ­ ge (200V//¿sec is generally used). A diode ( BYW 98) is connected between each , 25 30 35 40 45 \% ) 5 {V Fig. 4 - T ypica l diode behaviour in synchronous re ctifica tio n , trin sic diode between th e ir source and drain th a t can operate as a fast freewheeling diode in , when the voltage reaches the diode voltage it is clamped to its characteristic. When the E N A B L E in p u t is low, the POWER MOS is O FF and the diode carries all o f the recirculation current. The


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PDF L6203 100KHz
diode BYW 66

Abstract:
Text: the value VrwM< The BYW 07-150 A diode is able to withstand acci« dental reverse overvoltagef in the , S G S—THOMSON O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS BYW 07- BYW G7 15QA HIGH , ABSOLUES D'UTILISATION BYW 07*50 BYW 07-100 BYW 07-150 BYW 07-200 BYW ^ 07-150 A Avafenche Repetitive , BYW 07-50 200 - BYW 07-150 A 59C 02211 üT- ELECTRICAL CHARACTERISTICS . CARACTÉRISTIQUES , =25°C 30 mA T(vjj = 150 °C V-VnilM BYW 07-60 150 V 40 BYW 07-200 V VF 0,84 V T(vj( = 150 °C ' IF


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PDF
Diode LT 9250

Abstract:
Text: rv v M * The BYW 92*150 A diode is able to w ithstand accl* dental reverse overvoltages in the , SEM ICONDUCTEURS DISCRETS BYW 92-50^200, (R) BYW 92-150 A f (R) HIGH EFFICIENCY FAST RECOVERY , * Junction temperature Température de /on ctio n BYW 92-50, (R) BYW 82-100, m i BYW 92-156, (R) BYW 92-200, (R) BYW 92-150/U H ) avilincfce \ Vrrm V RSM p RSM(1i f FRM 1FIRMS) ·F(A V ) fsm , ) BYW 92-1S0 A (tp = 80 p i lin u s o lt& l) July 19831/6 50, rue Jean-Pierre Timbaud * B.P. 5 F ·


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PDF 00G2252 CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 Diode LT 9250 diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diode BYW 19 diodes byw diodes byw 92
diode BYW 92

Abstract:
Text: SUPERSWITCH BYW 92-50-^200, (R) BYW 92-150 A, (R) HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS , LIMITES ABSOLUES D'UTILISATION BYW 92-59, IR) BYW 82*100, IB) BYW 92-150, (RI BYW 92-200, IR) BYW 92-150 , (1) BYW 92-150 A Up s 80 pi unufolthl) Controlled avalanche type 50, rue Jean-Pierre Timbaud - B.P , 4 BYW 92-50 ->- 200 - BYW 92-160 A 59C 02254 0T'03't7 0 to 20 30 40 IF(AV) FIGURE 1 : Pow , JF(A) 287 S G S—THOMSON SIC D | 7121237 D0022SS b I BYW 92-50 200 - BYW 92-150 A. 1B0 170 160


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PDF 0DG2252 7T2C1537 0QQ22S7 diode BYW 92 5 amp diode byw 92 diode BYW 92-200 SA 9259 diode puissance 30 amp BYW 90 rms p2f diode BYW 66 5 amp diode byw 92-200 diodes byw
77150

Abstract:
Text: in excess of the value Vrwm- The BYW 77-150 A diode is able to withstand acci-.dental reverse , SUPERSWITCH BYW 77-50—200, (R) BYW 77-150 A, (R) high efficiency fast recovery rectifiers REDRESSEURS , ABSOLUES D'UTILISATION BYW 77H.IR) BYW 77-1(1, (RI BYW 77-150, (R) BYW 77-2M, (R) BYW 77-1HA.IR) inlmdw , ) BYW 77-160 A (tp s 80 jii sinusoidal) Controlled waltneh* typ« 50,' rue Jean-Pierre Timbaud - B.P. 5 , St-THOMSON 1 5TC D 1 7^237 Q00c?22ti 5 BYW 77:50-* 200 - BYW 77-150 A-Ve . s a . . 59C 02229 D T'O^'XÃ


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PDF PIAVI51 BVW77 77150 diode puissance 30 amp diode BYW 76 diode BYW 66 BYW 77 diode BYW BYW 90 high efficiency fast recovery diode byw BYW77 BYW 200
diode byw 81 200

Abstract:
Text: SUPERSWITCH BYW 81-50-200, (R) BYW 81-150 A, (R) high efficiency fast recovery rectifiers REDRESSEURS , toc ABSOLUTE RATINGS (LIMITING VALUES) VALEURS LIMITES ABSOLUES D'UTILISATION BYW •1-5*. (Kl BYW ihm. im BYW imh.ffl) BYW iimffli ■YW ti-iNA.ni antenata S Repetitive peak reverte voltage Tension , -40+160 -40 + 160 -40 + 160 -40 + 160 -40+160 OC ) 111 BYW 81-150 A ( tp = 80 fit-slnusolMal I Contrail , –¡5247 7 BYW 81-50 -+ 200.- BYW 81-150 A f; 59 C 02 24f D ~T'03 '/ 7 electrical characteristics -


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PDF Iat100Â diode byw 81 200 Diode BYW 59 Diode BYW 56 diode BYW 66 Q002 diode P2F diode BYW diode BYW 81 ANTENA 8150 diode
Diode BYW 56

Abstract:
Text: value Vrw m * BYW 81-150 A diode is able to withstand ac«t> dental reverse overvoltages in the avalanche , DISCRETS BYW 81-50- 200, (R) BYW 81-150 A. (R) HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS , da /onction VRRM BYW 11-51,01} 50 56 >rw BYW 11-IU.tR) 160 165 BYW BYW S12f»,(M H , Junctfon-caw thermal resistance Résistance thermittue jonction boîtier V {1} BYW 81-150 A ( tp = 80 p» - , \T H O M S O N S G S-THQMSON . SIC D I I 7151537 2247 7 BYW '81'60 -» 200.- BYW 81* 15ÒA "


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PDF 1200C REDRE08 CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 Diode BYW 56 0224S diode BYW 19 2791T byw+36+v
BYW 90

Abstract:
Text: repetitive turget In excett of tha value Vrvvm- The BYW 78-150 A diode it able to withttand accidental revena , SUPERSWITCH 59C BYW 78-50+200, (R) BYW 78-150 A, (R) HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS , ABSOLUTE RATINGS (LIMITING VALUES) VALEURS LIMITES ABSOLUES D'UTILISATION BYW 71-50,1111 ■YW 7t-1M,(RI , * ¡onction boithr ™x "thll-cl 1 1 1 1 1 s KM V (11 BYW 78-160 AI tp a 80 M« - tlnutoWel I , 268 S G S-THOMSON SIC D I 712=1537 []a0223b 2 BYW 78-50 -» 200 - BYW 78-150 A FIGURE 1 : Powir I


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PDF I71H1237 BYW 90 1200C dioda l200c soae ZTF 160
77150

Abstract:
Text: avoid all repetitive surges In excess of the value VpvVM' The BYW 77*150 A diode i* able to , DISCRETS BYW 77-50-200, (R) BYW 77-150 A, (R) HIGH E F F IC IE N C Y F A S T R E C O V E R Y R E C T IF , resistance Résistance therm ique /onction b o îtie r V (1) BYW 77-150 A (tp s 80 j ii BYW 77-M.tR) BYW 77-1H.fR) BYW 77*150, IR) BYW 77-2M, (R) BYW 7M 5UM R} ·vtlM dw \ Vrrm V rsm pRSM m *FRM , S-THOMSON S'îC D TTETEB? Ü002230 1 r 59C 0 2 2 30 Dt - o j & ï BYW 77-60 - 2 0 0


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PDF QGGE22Û CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 77150 diode BYW 31 200
diode BYW 66

Abstract:
Text: network would avoid all repetitive surges in excess of the value Vrwm- The BYW 80-150 A diode is able to , SUPERSWITCH BYW SO SO - BYW80150A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT , values) VALEURS LIMITES ABSOLUES D'UTILISATION BYW 80-50 BYW ' 80-100 BYW 80-160 BYW 80-200 BYW 80-160 A , ! Tél. : (1) 788-50-01 Telex '610560 F ♦ «^wi^ßnHw s G S-THQMSQN SIC D I 7=12^53? QQGazm BYW 80-50 -* 200 - BYW 80-150 A 59C 02241 D~T*03*n electrical characteristics-caractéristiques Ã


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PDF BYW80150A Q00S2M5 diode BYW 66 DIODE DO-220 diode P2F high efficiency fast recovery diode byw diode BYW 85 BYW 90 diode BYW 8050 2D C BYW 26 QQQ2243
transistor S 8050

Abstract:
Text: rvVM* The BYW 80*150 A diode is able to withstand eed* dental reverse overvoltages in the avalanche , SEMICONDUCTEURS DISCRETS BYWB05Q 200 BYW 80 150A HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S , Dissipation de puissance CB* Junction temperature T (vj> Tampérature de /onction V BYW 80-50 BYW ' 80-100 BYW 60-160 BYW 80-200 BYW 80-150 A avalanche 160 - 450 100 20 12 100 20 \ 60 56 , J Junction-cata thermal resistance Résistance thermique ¡onction boîtier U l BYW 80-160 A (tp s


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PDF BYWB05Q 130OC CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 transistor S 8050 8A273 BYW60 ggqb2 Diode BYW 56 150TV diode BYW 60 diodes byw transistor 8050 d
111EF

Abstract:
Text: surges In excess of the value V RVVM, The BYW 78*150 A diode it able to withstand acci dental reverte , Goaaa3M t T BYW 78-50-200, (R) BYW 78-150 A , (R) HIGH EFFICIENCY FAST RECOVERY RECTIFIERS , la connected to c -A B S O L U T E R A T IN G S { L IM IT IN G V A L U E S ) BYW Tt-fiQ, ft) SO 66 BYW BYW 7f-1 M .au BYW 7t2W ' BYW 71151 A. OU ·vftfeed» 160 - , l BYW 78-150 A ( tp s 80 lis - «Inu ioB« I Controlled avalanche type July 19631/e j \T H O M S


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PDF CB-425) CB-262) CB-262 QDD53t CB-19) CB-428) CB-244 111EF 78150 BYW 200 diode BYW 66 diodes byw 78 100 T03A
N5062

Abstract:
Text: surge current loading Electrically equivalent diodes: BYW 52 - 1 N5059 BYW 53 - 1 N5060 BYW 54 - 1 N5061 BYW 55 - 1 N5062 Applications Rectifier, general purpose Absolute Maximum Ratings Tj = 2 5 °C P aram eter R everse voltage =R epetitive peak reverse voltage Test C onditions Type BYW 52 BYW 53 BYW 54 BYW 55 BYW 56 Peak forw ard surge current R epetitive peak forw ard current Average forw ard , Breakdow n voltage Diode capacitance Reverse recovery tim e R everse recovery charge lF=1 A V r= V rrm V


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PDF BYW52. BYW56 N5059 N5060 N5061 N5062 D-74025 24-Jun-98 N5062 Diode BYW 56 TELEFUNKEN BYW-56 diodes byw diodes byw 88 600 r N-5061
aval

Abstract:
Text: ) C o ntrolled Avalancha type mex R th ll-c) BYW 07*50 BYW 07*100 BYW 07-150 BYW 07-200 BYW 07-150 A Avalanche A Vrrm V rsm Pr S M ÎIÏ *FRM >F(RMSÏ >F(AV) fsm P 50 55 - 100 110 , S G S-THOMSON S^C D 11 7 ^ 2 3 7 ÜQQE511 f l BYW 07-50 -> 200 - BYW 07-150 A 59C 0 2 2 1 , NDITIO NS DE MESURE T ( v i ï = 2 5 oC ^ -V rrM byw lR 07-50 150 V BYW 07-200 V T(vj( = 150 , -# 2 ,/ BYW 07-50 -* 200 - BYW 07-150 A FIG U R E 1 *, Power losw * versus » «fa g« currant F


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PDF CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 aval
N5625

Abstract:
Text: High surge current loading Electrically equivalent diodes: BYW 82 - 1 N 5624 BYW 83 - 1 N5625 BYW 84 - 1 N 5626 BYW 85 - 1 N 5627 94 9588 Applications Rectifier, general purpose Absolute Maximum , BYW 82 BYW 83 BYW 84 BYW 85 BYW 86 Peak forw ard surge current R epetitive peak forw ard current , PF (IS |iS Forward voltage R everse current Breakdow n voltage Diode capacitance Reverse recovery , Current vs. Forward Voltage Figure 6. Typ. Diode Capacitance vs. Reverse Voltage tp - Pulse Length


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PDF BYW82. BYW86 N5625 D-74025 24-Jun-98 diodes byw diodes byw 88 600 r N5624
Not Available

Abstract:
Text: IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, (R) HIGH EFFICIENCY , facile /A B SO LU TE RATINGS (LIMITING VALUES) BYW 06*50, (R) BYW 08*100, (R) V RRM 50 , E S A B S O L U E S D 'U T IL IS A T IO N BYW M~150,(R) BYW 08-200, (R) Repetitive peak , TILIS A TIO N IM EFFICIENCY Efficiency Is Improved when tha diode Is used at a currant considerably low er than the maximum ratings. H-2 NOJSE The noise introduced by the diode In switching mode (for


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PDF CB-425) CB-262 CB-262) CB-19) CB-428) CB-244
BYW 200

Abstract:
Text: 59C 02216 D BYW 08-50-200, (R) SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS , (LIMITING VALUES) VALEURS LIMITES ABSOLUES D'UTILISATION BYW 06-50, IR) BYW 08-100, (R) BYW 08-160r(R> BYW , D05ICB34) 250 S G S-THOMSON STC D I 7^237 GüüEPlfl 0 59C 02218 _ DT"' Ob 'AI. BYW 08-50-200 P (W , S G S-THOMSON l^C D I 715^537 0002211 2 BYW 08-50-200 ' 5 9C .02219 0 T~03 'XT c (pF) 3SO 360 , « diode art generally negllgibl* and expressed by tha following ampirical formula: T la tha o pa rati rig


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PDF BYW08 BYW 200 diodes byw 92 ZTF 160 AV8080 diode BYW 66 diode BYW 92 diode La thomson diodes
TFK diodes BYW 76

Abstract:
Text: BYW 34 B Y W 35 B Y W 36 B Y W 52 B Y W 53 BYW 54 BYW 55 BYW 56 BYW 72 BYW 73 BYW 74 BYW 75 BYW 76 BYW 82 BYW 83 BYW 84 BYW 85 BYW 86 2 5 3 /A 53/B 53/C 53/D 53/F 53/G 15 15 , quality level Base Cathode Collector Diode capacitance Feedback capacitance, common base , current Drain current Em itter current Em itter cut-off current of the diode em itter — base 2 , 30 30 Notes and Case Dimensions see page 10 3 Low leakage diode B A W 24 50 600


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PDF
byw 98 100

Abstract:
Text: reverse voltage Test C onditions Type BYW 32 BYW 33 BYW 34 BYW 35 BYW 36 Peak forw ard surge current R , . Ambient Temperature Figure 6. Typ. Diode Capacitance vs. Reverse Voltage 2 (4 ) Rev. A2, 24


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PDF BYW32. BYW36 D-74025 24-Jun-98 byw 98 100 diode BYW 91 fast diode byw 98 100 fast diode byw 98 200
fast diode byw 98 200

Abstract:
Text: peak reverse voltage Test C onditions Type BYW 72 BYW 73 BYW 74 BYW 75 BYW 76 Peak forw ard surge , Temperature Figure 6. Typ. Diode Capacitance vs. Reverse Voltage 2 (4 ) Rev. A2, 24


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PDF BYW72. BYW76 D-74025 24-Jun-98 fast diode byw 98 200 silicon diode byw 60
2000 - External recirculating diodes

Abstract:
Text: specified rate of rise and fall during turn-on and turn-off. Diode selection guide Diode UF-4001 BYW , diodes. It is not possible to choose any power diode which can handle the current. Other parameters have , transistor T4 is on and transistor T1 is off. The current forward biases the D3 diode . The result is slow , the reverse direction through the diode , immediately after it has been switched from con-ducting in the forward direction. The result is that the current will flow, through the diode D3 in the reverse


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PDF UF-4001 BYW-22 BYW-98 BYV-27 External recirculating diodes TRANSISTOR T4 1r5gu byw22 BYV 22 diode T4 DIODE diode DIODE d3 DIODE T5 t1is
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