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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
LT1358IS8 Linear Technology LT1358 - Dual 25MHz, 600V/µs Op Amps; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1358CS8#PBF Linear Technology LT1358 - Dual 25MHz, 600V/µs Op Amps; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1358CS8#TRPBF Linear Technology LT1358 - Dual 25MHz, 600V/µs Op Amps; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

diode 8a 600v Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - diode 8a 600v

Abstract: CMPFCD86XN220
Text: CMPFCD86 PFC Diode ( 8A / 600V ) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , CMPFCD86 PFC Diode ( 8A / 600V ) ORDERING INFORMATION Part Number Temperature Range Package , Microelectronic Corporation Page 2 CMPFCD86 PFC Diode ( 8A / 600V ) TYPICAL CHARACTERISTICS 2009/12/02 Rev1.1 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode ( 8A / 600V ) PACKAGE , Corporation Page 4 CMPFCD86 PFC Diode ( 8A / 600V ) TO-220FP Dimensions in inches and (millimeters


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PDF CMPFCD86 A/600V) O-220AC O-220FP UL94V-0 MIL-STD-202 diode 8a 600v CMPFCD86XN220
2010 - CMPFCD86GN220

Abstract: No abstract text available
Text: CMPFCD86 PFC Diode ( 8A / 600V ) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , CMPFCD86 PFC Diode ( 8A / 600V ) ORDERING INFORMATION Part Number Temperature Range Package , .2 Champion Microelectronic Corporation Page 2 CMPFCD86 PFC Diode ( 8A / 600V ) TYPICAL CHARACTERISTICS 2010/05/21 Rev1.2 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode ( 8A / 600V , Microelectronic Corporation Page 4 CMPFCD86 PFC Diode ( 8A / 600V ) TO-220FP Dimensions in inches and


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PDF CMPFCD86 A/600V) O-220AC O-220FP UL94V-0 MIL-STD-202 620support CMPFCD86GN220
diode 8a 600v

Abstract: CMPFCD86 3 phase pfc diode cmc F 4
Text: CMPFCD86 PFC Diode ( 8A / 600V ) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , CMPFCD86 PFC Diode ( 8A / 600V ) TYPICAL CHARACTERISTICS 2009/04/30 Rev1.0 Champion Microelectronic Corporation Page 2 CMPFCD86 PFC Diode ( 8A / 600V ) Application Circuit PACKAGE DIMENSION TO , CMPFCD86 PFC Diode ( 8A / 600V ) TO-220FP Dimensions in inches and (millimeters) SMC Dimensions in , CMPFCD86 PFC Diode ( 8A / 600V ) IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves


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PDF CMPFCD86 A/600V) O-220AC O-220FP UL94V-0 MIL-STD-202 diode 8a 600v CMPFCD86 3 phase pfc diode cmc F 4
2010 - diode 8a 600v

Abstract: CMPFCD86 CMPFCD86XN220
Text: CMPFCD86 PFC Diode ( 8A / 600V ) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , . 2010/10/28 Rev1.3 Champion Microelectronic Corporation Page 1 CMPFCD86 PFC Diode ( 8A / 600V , Diode ( 8A / 600V ) TYPICAL CHARACTERISTICS 2010/10/28 Rev1.3 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode ( 8A / 600V ) PACKAGE DIMENSION TO-220AC Dimensions in inches and , ( 8A / 600V ) TO-220FP Dimensions in inches and (millimeters) SMC Dimensions in inches and


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PDF CMPFCD86 A/600V) O-220AC O-220FP UL94V-0 MIL-STD-202 diode 8a 600v CMPFCD86 CMPFCD86XN220
2011 - Not Available

Abstract: No abstract text available
Text: CMPFCD86 PFC Diode ( 8A / 600V ) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , . 2011/09/13 Rev1.6 Champion Microelectronic Corporation Page 1 CMPFCD86 PFC Diode ( 8A / 600V , Diode ( 8A / 600V ) TYPICAL CHARACTERISTICS 2011/09/13 Rev1.6 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode ( 8A / 600V ) PACKAGE DIMENSION TO-220AC Dimensions in inches and , Microelectronic Corporation Page 4 CMPFCD86 PFC Diode ( 8A / 600V ) IMPORTANT NOTICE Champion


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PDF CMPFCD86 A/600V) O-220AC O-220FP UL94V-0 MIL-STD-202
2013 - CM6805

Abstract: No abstract text available
Text: CMPFCD86 PFC Diode ( 8A / 600V ) FEATURES Fast switching for high efficiency Low noise Trr ~ 25ns , .7 Champion Microelectronic Corporation Page 1 CMPFCD86 PFC Diode ( 8A / 600V ) MAXIMUM RATINGS AND , Page 2 CMPFCD86 PFC Diode ( 8A / 600V ) TYPICAL CHARACTERISTICS Figure 2. Typical Reverse , Corporation Page 3 CMPFCD86 PFC Diode ( 8A / 600V ) PACKAGE DIMENSION 2013/12/06 Rev1.7 Champion Microelectronic Corporation Page 4 CMPFCD86 PFC Diode ( 8A / 600V ) IMPORTANT NOTICE Champion


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PDF CMPFCD86 A/600V) O-220AC) O-220FP) O-252/DPAK) O-220AC O-220FP CM6805
2003 - 600V igbt dc to dc buck converter

Abstract: diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent
Text: with Anti-Parallel Hyperfast Diodes 15A, 600V Stealth Diode 8A , 600V Stealth Diode Schottky Barrier , 2.5V Specified PowerTrench; BGA MOSFET 33A, 600V StealthTM; Diode NPN Multi-Chip General Purpose , Anti-Parallel Hyperfast Diode 600V SMPS Series N-Channel IGBT ISL9R1560PF2 ISL9R860PF2 MBRA3045N , , SMPS Series N-Channerl IGBT with Anti-Parallel Hyperfast Diode 600V ; SMPS Series N-Channel IGBT 600V , UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V ; SMPS Series N-Channel IGBT 600V


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PDF FS6X1220RT FSAT66 FDC796N/FDC3616N FDZ299P FXL34 Power247TM, 600V igbt dc to dc buck converter diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent
2001 - diode 8a 600v

Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
Text: Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 15A, 600V StealthTM Diode 8A , 600V StealthTM Diode N-Channel Enhancement Mode Field Effect Transistor P-Channel 2.5V Specified PowerTrench® MOSFET , 400-V to 1000-V operation; 1.5-A to 8-A ratings Comprehensive New Product List Analog FAN1537 , Schottky Diode Integrated Load Switch 30V N-Channel Logic Level PowerTrench® MOSFET 30V N-Channel , PowerTrench® MOSFET P-Channel 2.5V Specified PowerTrench® MOSFET with Schottky Diode Dual N-Channel 2.5V


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PDF Power247TM, diode 8a 600v 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
2010 - NTC 5D-15

Abstract: NTC 5D15 diode 8a 600v fan7930 ZNR101 FAN7930C EER3124N EER3124 FAN7530 "LCD tv Power Supply"
Text: , 600V , SuperFET 1W, 18V, Zener Diode 1A, 400V Glass Passivated High-Efficiency Rectifier 1A, 100V Small-Signal Diode 1A, 100V Small-Signal Diode 8A , 600V , General-Purpose Rectifier 3A, 600V , General-Purpose , ,68m F,630Vdc TH101 ,5D15 D105 600V 8A DC OUTPUT R113 3.9M R109 47 Q101 FCPF 20N60 R108 D103 , /250V NTC 5D-15 Bridge Diode 15A, 600V Line Filter 23mH Transformer EER3124 ZNR 10D471 Ae , rating of the power switch or diode . This can seriously damage the power switch and result in burn down


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PDF FAN7930C 500/-800mA FAN7930C NTC 5D-15 NTC 5D15 diode 8a 600v fan7930 ZNR101 EER3124N EER3124 FAN7530 "LCD tv Power Supply"
2010 - FAN7930B

Abstract: NTC 5D-15 NTC 5D15 FAN7930 ZNR101 diode 8a 600v capacitor .33uf 250v polyester FAN7530 EER3124 schematic diagram fan7530
Text: 1N4148 Note 20A, 600V , SuperFET 1W, 18V, Zener Diode 1A, 400V Glass Passivated High-Efficiency Rectifier 1A, 100V Small-Signal Diode 1A, 100V Small-Signal Diode 8A , 600V , General-Purpose Rectifier 3A, 600V , General-Purpose Rectifier Diode IC101 FAN7930B CRM PFC Controller Fuse Box , 5D-15 Bridge Diode 15A, 600V Line Filter © 2010 Fairchild Semiconductor Corporation FAN7930B · Rev , current, that exceeds the current rating of the power switch or diode . This can seriously damage the power


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PDF FAN7930B 500/-800mA FAN7930B FAN7930 NTC 5D-15 NTC 5D15 ZNR101 diode 8a 600v capacitor .33uf 250v polyester FAN7530 EER3124 schematic diagram fan7530
2009 - diode 8a 600v

Abstract: No abstract text available
Text: FFP08D60L2 8A , 600V , DeuxpeedTM Diode June 2009 FFP08D60L2 Features · Duexpeed Recovery , or separate heatsink. 8A , 600V , DeuxpeedTM Diode Applications · Boost Diode in Continuous Mode , www.fairchildsemi.com FFP08D60L2 8A , 600V , DeuxpeedTM Diode Electrical Characteristics TC = 25oC unless otherwise , Rev. B 2 www.fairchildsemi.com FFP08D60L2 8A , 600V , DeuxpeedTM Diode Typical Performance , www.fairchildsemi.com FFP08D60L2 8A , 600V , DeuxpeedTM Diode Mechanical Dimensions Dimensions in Millimeters


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PDF FFP08D60L2 FFP08D60L2 diode 8a 600v
2001 - k08t120

Abstract: BUP30 k08t12
Text: function of diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR= 600V , IF= 8A , reverse recovery current as a function of diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in , current as a function of diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in Figure E) Power , E = 15V, I C = 8A T j = 25 ° C T j = 12 5 ° C T j = 15 0 ° C Diode forward voltage VF V G E = 0V, I


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PDF IKW08T120 BUP305D k08t120 BUP30 k08t12
2008 - k08T120

Abstract: No abstract text available
Text: a function of diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in Figure E) 400A/µs , function of diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in Figure E) 5A TJ , fall of reverse recovery current as a function of diode current slope (VR= 600V , IF= 8A , Dynamic test , voltage VCE(sat) Diode forward voltage VF V V G E = 15 V, I C = 8A V G E = 0V , I F = 8 , °C , - 80 - ns Diode reverse recovery charge Qrr V R = 60 0 V , I F = 8A , - 1.0


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PDF IKW08T120 BUP305D k08T120
2001 - Not Available

Abstract: No abstract text available
Text: diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in Figure E) TJ=25°C 20A 15A , Figure 25. Typical reverse recovery current as a function of diode current slope (VR= 600V , IF= 8A , of reverse recovery current as a function of diode current slope (VR= 600V , IF= 8A , Dynamic test , Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15V, I C = 8A V G , - 200 - ns Diode reverse recovery charge Qrr V R = 6 00V, I F = 8A , - 2.3


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PDF IKW08T120 BUP305D
2009 - solar inverter circuit

Abstract: Solar inverter power module 3kw inverter solar inverter pcb diode bridge 16A solar inverter 600v 75a diode 8a 600v 600v 20a diode solar power inverter
Text: Part ­No Voltage Boost H Bridge Application FZ06BIA045FH 600V 45m 16A SiC diode 45m 75A 8A SiC diode non-isolated solar FZ06BIA045FH01 600V 45m 16A SiC diode 45m , Application FZ06BIA045FH02 600V 45m 16A SiC diode 45m 75A 8A SiC diode non-isolated solar Part ­No Voltage Boost H Bridge Application FZ06BIA083FI 600V 45m 16A SiC diode , Application FZ06RIA045FH 600V fast 45m 75A 8A SiC diode isolated solar (secondary


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PDF FZ06BIA045FH Vincotech-029-0409 solar inverter circuit Solar inverter power module 3kw inverter solar inverter pcb diode bridge 16A solar inverter 600v 75a diode 8a 600v 600v 20a diode solar power inverter
2014 - Not Available

Abstract: No abstract text available
Text: 20V – 200V Diode Schottky 30A 20V – 45V Diode Schottky 40A 20V – 200V Diode Superfast 8A 200V – 600V Diode Superfast 8A 200V – 600V Diode Superfast 10A 200V – 600V Diode Superfast 16A 200V – 600V Diode Superfast 16A 200V – 600V Diode Superfast 30A 200V – 600V Diode Superfast , ) MSL Rating 1 Description Diode Schottky 8A 20V – 200V Diode Schottky 8A 20V – 200V Diode Schottky 10A 20V – 200V Diode Schottky 10A 20V – 200V Diode Schottky 16A 20V – 200V Diode Schottky


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PDF SB820D SB8200D SB820DC SB8200DC SB1020D SB10200D SB1020DC SB10200DC SB1620D SB16200D
2013 - k08T120

Abstract: No abstract text available
Text: reverse recovery time as a function of diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in , charge as a function of diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in Figure E) TJ , fall of reverse recovery current as a function of diode current slope (VR= 600V , IF= 8A , Dynamic test , =150°C, VCE= 600V , VGE=0/15V, IC= 8A , Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE , (inductive load, VCE= 600V , VGE=0/15V, IC= 8A , RG=81Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS


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PDF IKW08T120 BUP305D k08T120
2014 - Not Available

Abstract: No abstract text available
Text: Matte Tin (Sn) Description Diode Schottky 6A 20V – 100V Diode Schottky 8A 20V – 200V Diode Schottky 10A 20V – 200V Diode Schottky 16A 20V – 200V Diode Superfast 8A 50V – 600V Diode Superfast 8A 600V Diode Superfast 10A 50V – 600V Diode Superfast 15A 50V – 600V Diode Superfast 16A 50V – 600V Diode Superfast 30A 200V – 600V Diode Ultrafast 8A 50V – 800V Diode Ultrafast 10A


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PDF O-220A SB620 SB6100 SB820 SB8200 SB1020 SB10200 SB1620 SB16200 ER800
2014 - Not Available

Abstract: No abstract text available
Text: Material Doped Silicon* Terminal Finish Matte Tin (Sn) Description Diode Schottky 6A 20V – 100V Diode Schottky 8A 20V – 200V Diode Schottky 10A 20V – 200V Diode Schottky 16A 20V – 200V Diode Superfast 8A 50V – 600V Diode Superfast 8A 600V Diode Superfast 10A 50V – 600V Diode Superfast 15A 50V – 600V Diode Superfast 16A 50V – 600V Diode Superfast 30A 200V – 600V Diode Ultrafast 8A 50V – 800V Diode Ultrafast 10A 50V – 800V Substance CAS No. Material Mass (%


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PDF ITO-220A SB620F SB6100F SB820F SB8200F SB1020F SB10200F SB1620F SB16200F ER800F
2008 - k08T120

Abstract: IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04
Text: SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR= 600V , IF= 8A , current as a function of diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in Figure E , junction temperature (inductive load, VCE= 600V , VGE=0/15V, IC= 8A , RG=81, Dynamic test circuit in Figure , function of gate resistor (inductive load, TJ=150°C, VCE= 600V , VGE=0/15V, IC= 8A , Dynamic test circuit in , function of junction temperature (inductive load, VCE= 600V , VGE=0/15V, IC= 8A , RG=81, Dynamic test


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PDF IKW08T120 BUP305D k08T120 IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04
Not Available

Abstract: No abstract text available
Text: Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 800A, VCE = 600V VGE = ±15V, RG = 1, „¦, Tvj = 25°C td,on VGE = ±15V, RG = 1, „¦, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 800A, VCE = 600V VGE = ±15V, RG = 1, „¦, Tvj = 25°C tr VGE =  , ) IC = 800A, VCE = 600V VGE = ±15V, RG = 1, „¦, Tvj = 25°C td,off VGE = ±15V, RG = 1, , Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C Isolations-Prüfspannung


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PDF
2007 - k08T120

Abstract: 5M MARKING CODE DIODE 5A 100V IKW08T120 BUP305D PG-TO-247-3-21
Text: . Typical reverse recovery time as a function of diode current slope (VR= 600V , IF= 8A , Dynamic test , Figure 24. Typical reverse recovery charge as a function of diode current slope (VR= 600V , IF= 8A , function of diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in Figure E) Power , diode peak rate of fall of reverse recovery current as a function of diode current slope (VR= 600V , IF= 8A , resistor (inductive load, TJ=150°C, VCE= 600V , VGE=0/15V, IC= 8A , Dynamic test circuit in Figure E) VGE


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PDF IKW08T120 BUP305D k08T120 5M MARKING CODE DIODE 5A 100V IKW08T120 BUP305D PG-TO-247-3-21
2001 - IKW08T120

Abstract: BUP305D
Text: function of diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in Figure E) TJ=150°C 2µC , diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in Figure E) Power Semiconductors TJ , function of diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in Figure E) 400A/µs 600A/µs , current as a function of diode current slope (VR= 600V , IF= 8A , Dynamic test circuit in Figure E , switching times as a function of gate resistor (inductive load, TJ=150°C, VCE= 600V , VGE=0/15V, IC= 8A


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PDF IKW08T120 BUP305D Jul-02 IKW08T120 BUP305D
2001 - Not Available

Abstract: No abstract text available
Text: , TJ=150°C, VCE= 600V , VGE=0/15V, IC= 8A , Dynamic test circuit in Figure E) td(off) VGE(th , of gate resistor (inductive load, TJ=150°C, VCE= 600V , VGE=0/15V, IC= 8A , Dynamic test circuit in , switching energy losses as a function of junction temperature (inductive load, VCE= 600V , VGE=0/15V, IC= 8A , / VCE 1200V IC 8A VCE(sat),Tj=25°C 1.7V Tj,max 150°C Marking Code G08T120 Package G E PG-TO , limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150°C Diode forward current TC = 25°C TC =


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PDF IGW08T120 BUP305D
2001 - Not Available

Abstract: No abstract text available
Text: , TJ=150°C, VCE= 600V , VGE=0/15V, IC= 8A , Dynamic test circuit in Figure E) td(off) VGE(th , of gate resistor (inductive load, TJ=150°C, VCE= 600V , VGE=0/15V, IC= 8A , Dynamic test circuit in , switching energy losses as a function of junction temperature (inductive load, VCE= 600V , VGE=0/15V, IC= 8A , / VCE 1200V IC 8A VCE(sat),Tj=25°C 1.7V Tj,max 150°C Marking Code G08T120 Package G E PG-TO , Turn off safe operating area VCE 1200V, Tj 150°C Diode forward current TC = 25°C TC = 100


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PDF IGW08T120 BUP305D
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