The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1460GCZ-2.51460 Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PBCY3, PLASTIC, TO-226, TO-92, 3 PIN, Voltage Reference
LM385BZ-1.2 Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.235 V, PBCY3, PLASTIC, TO-226, TO-92, 3 PIN, Voltage Reference
LM385BZ-2.5 Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, PBCY3, PLASTIC, TO-226, TO-92, 3 PIN, Voltage Reference
LM285Z-2.5#PBF Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, PBCY3, PLASTIC, TO-226, TO-92, 3 PIN, Voltage Reference
LM385BZ-1.2#PBF Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.235 V, PBCY3, PLASTIC, TO-226, TO-92, 3 PIN, Voltage Reference
LM385BZ-2.5#PBF Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, PBCY3, PLASTIC, TO-226, TO-92, 3 PIN, Voltage Reference

diode 226 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - lnk306pn

Abstract: RF1141 diode BY 226 lnk306 LNK306PN ROHS DER-226 Renco RL-8064-3 MFR-25FBF-10K7 EKMG201ELL100MJ16S RL-8064-3
Text: Department Document Number DER- 226 Date February 16, 2010 Revision 1.0 Summary and , Jose, CA 95138 USA. Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com DER- 226 5 V, 12 V , 9200 Fax: +1 408 414 9201 www.powerint.com Page 2 of 24 16-Feb-10 DER- 226 5 V, 12 V Cooktop , Power Integrations Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com DER- 226 5 V, 12 V , : +1 408 414 9201 www.powerint.com 0 105 o C Page 4 of 24 16-Feb-10 DER- 226 5 V


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PDF LNK306PN DER-226 lnk306pn RF1141 diode BY 226 lnk306 LNK306PN ROHS DER-226 Renco RL-8064-3 MFR-25FBF-10K7 EKMG201ELL100MJ16S RL-8064-3
diode BY 226

Abstract: DIODE RING QUAD
Text: PARASITICS FOR BROAD BAND DESIGNS Single Barrier Ring Quads Each Schottky barrier diode quad consists of , individual diode is in beam-lead form. The beam-lead construction assures minimum junction capacitance , The cross-over quad is a single barrrier ring quad where the leads are crossed-over within the diode package. The diodes used are four closely matched medium barrier Schottky diode chips. M/A-COM , available in five case styles which are compatible with microstrip assembly techniques. The 226 case style


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MA40430

Abstract: MA40483 Semiconductor ring structure MA40440 diode ring mixer MA40285
Text: PARASITICS FOR BROAD BAND DESIGNS Single Barrier Ring Quads Each Schottky barrier diode quad consists of , individual diode is in beam-lead form. The beam-lead construction assures minimum junction capacitance , The cross-over quad is a single barrrier ring quad where the leads are crossed-over within the diode package. The diodes used are four closely matched medium barrier Schottky diode chips. M/A-COM , available in five case styles which are compatible with microstrip assembly techniques. The 226 case style


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2008 - diode BY 226

Abstract: diode marking 226
Text: Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R502- 226 .A UT3418 Power MOSFET , Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 15 V mΩ A 226 39 29 270 pF pF pF 2.6 3.2 14.5 2.1 3 1.4 0.55 4 5 22


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PDF UT3418 UT3418 UT3418L UT3418-AE3-R UT3418L-AE3-R OT-23 QW-R502-226 diode BY 226 diode marking 226
2009 - diode marking 226

Abstract: diode BY 226 all diodes ratings UT3418L UT3418
Text: QW-R502- 226 .B UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°, unless otherwise specified , Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/s Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 15 V m A 226 39 29 270 pF pF pF 2.6 3.2 14.5 2.1 3 1.4 0.55


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PDF UT3418 UT3418 UT3418L UT3418G UT3418-AE3-R UT3418L-AE3-R UT3418G-AE3-R QW-R502-226 diode marking 226 diode BY 226 all diodes ratings UT3418L
MA40435

Abstract: MA40446 diode BY 226
Text: BROAD BAND DESIGNS Single Barrier Ring Quads Each S chottky barrier diode quad consists of fou r , individual diode is in beam -lead form . The beam-lead construction assures m inim um junctio n capacitance , ith m icrostrip assem bly techniques. The 226 case style is herm etically sealed and should be used in , close to the physical size of the 226 case style. The sm aller case style, 227, is physically sm aller , Quads MA40430 MA40431 MA40432 MA40439 MA40433 MA40434 MA40437 MA40435 MA40436 MA40438 MA40284 226 227


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MA40483

Abstract: A4049 A beam lead ring quad of four Schottky diodes
Text: Styles Description Single Barrier Ring Quads Each Schottky barrier diode quad consists of four , stripline case styles which are compatible with microstrip assembly techniques. The 226 case style is her , 228 case style is a low-cost package of similar size to the 226 case style. Case style 227 is , current in mA. 4. All of these parts are available in case styles 226 , 227, 228, 264, 963 and 1008. To , = 0V and f = 1 MHz. Cj is comprised of fhe capacitance of two diode junctions in series. 2. Rs is


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2009 - Not Available

Abstract: No abstract text available
Text: Unisonic Technologies Co., Ltd 1 of 3 QW-R502- 226 .D UT3418 ̈ Power MOSFET ABSOLU T E M AX I , nA 1.4 43 52 101 1.8 60 70 155 V m m m A 226 39 29 270 pF pF pF , QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/ s Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN


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PDF UT3418 UT3418 UT3418L-AE3-R UT3418G-AE3-R QW-R502-226
si1420

Abstract: 40446
Text: sty les w hich are co m p atib le with m icrostrip asse m b ly tech n iqu es. T h e 226 c a se style , 226 c a se style. C a se style 227 is su g g e ste d for eith er high freq u en cy or w id e ban dw , is the forward current in mA. All of these parts are available in case styles 226 , 227, 228, 264, 963 , VR = OV and f = 1 MHz. Cj is comprised of the capacitance of two diode junctions in series. 2. R s is the diode series resistance which is the dynamic resistance, RT, minus the junction resistance, Rj


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2015 - Not Available

Abstract: No abstract text available
Text: www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R502- 226 .E UT3418  Power , 101 1.8 60 70 155 V mΩ mΩ mΩ A 226 39 29 270 pF pF pF 2.6 3.2 , DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/μs Body Diode Reverse , of 3 QW-R502- 226 .E UT3418  Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current


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PDF UT3418 UT3418 UT3418G-AE3-R OT-23 QW-R502-226
2009 - diode marking 226

Abstract: diode BY 226
Text: Technologies Co., Ltd 1 of 3 QW-R502- 226 .D UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25 , UNIT 1 100 V µA nA 1.4 43 52 101 1.8 60 70 155 V m m m A 226 39 29 , Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/s Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD


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PDF UT3418 UT3418 UT3418L-AE3-R UT3418G-AE3-R OT-23 QW-R502-226 diode marking 226 diode BY 226
toyota Speed Sensor

Abstract: igbt sinewave inverter three phase bridge inverter in 180 degree and 120 squirrel cage induction generator
Text: qualified IGBT, Diode components, modules • Influence over IGBT, module roadmap • Ability to , 210 0.77 226 0.87 239 0.94 248 0.98 254 1.00 256 0.98 254 0.94 248 0.87 239 0.77 226 , 1.571 1.745 1.920 2.094 sin scaled 255 0.87 239 0.77 226 0.64 210 0.50 192 0.34 172 , 106 0.00 128 0.17 150 0.34 172 0.50 192 0.64 210 0.77 226 0.87 239 0.94 248 0.98 254 , 172 0.50 192 0.64 210 0.77 226 0.87 239 0.94 248 0.98 254 1.00 256 0.98 254 0.94 248


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PDF 140HP 110VAC toyota Speed Sensor igbt sinewave inverter three phase bridge inverter in 180 degree and 120 squirrel cage induction generator
Not Available

Abstract: No abstract text available
Text: Designs MA4E400 Series V3.00 Case Styles Description Each Schottky barrier diode quad consists , that each individual diode is in beam lead form. The beam lead construction assures minimum junction , style. The available packages are 226 , 227, 228 or 963. To order a beam lead part add "-906". Notes , . High speed switching, a necessary sampling requirement, is accom plished with the Schottky diode , enable the designer to select a diode with an appropriate barrier such that the RF sig nal input to the


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PDF MA4E400
Not Available

Abstract: No abstract text available
Text: · · · MA4E400 Series V3.00 Case Styles Description Each Schottky barrier diode quad , each individual diode is in beam lead form. The beam lead construction assures minimum junction , a low barrier bridge quad housed in the 228 case style. The available packages are 226 , 227, 228 or , Package -6 5 °C to + 1 50 °C (Case Style 226 ) Beam Strength 2g (Case Style 906) 75 mW / junction Absolute , Schottky diode . Schottky diodes have switching sp eeds in the picosecond range. The four closely m atched


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PDF MA4E400
RXMVB 2

Abstract: rxmvb abb 1MRK 251 270 ohm resistor 015-UEN RXMVB4 RK 251 204 595-AD 016-BEN lockout relay
Text: for any other use. To protect electronic circuits against transients a diode unit across the coils of the dc relay can be used. For RXMVB 2 the diode is connected to 111(+) - 121(-) and 221(+) - 211(- , 116 118 124 214 228 226 224 213 227 225 223 RK 251 206-. + 122 214 228 226 224 , 118 222 224 226 228 113 115 117 221 223 225 227 318 316 314 312 428 426 424 317 315 313 311 427 425 423 RK 251 403-. + 121 212 114 116 118 222 224 226 228


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PDF 016-BEN SE970872) SE970878) 086-A 0086-B 0086-C 268-C 001-BEN 015-UEN SE-721 RXMVB 2 rxmvb abb 1MRK 251 270 ohm resistor 015-UEN RXMVB4 RK 251 204 595-AD 016-BEN lockout relay
226 e diode

Abstract: No abstract text available
Text: IGBT4 Modules SKM 50GB12T4 Inverse Diode E E=+ E,+ 26 7 <3 7 '6 63 :63 2'6 233 F3 G:;6 , typ. 6&< 3&< 3&; 2: >: :&<6 2&26 >&' 3&2 3&:< 2<3 max. '&6 3&@ 3&< 2> >> 2&36 2&6 Units H , © by SEMIKRON SKM 50GB12T4 Characteristics Symbol Conditions Inverse Diode E E3 E =+ I =8F , $ 8 :63 7$ 8 26 7 8 :63 7 8 26 7 8 :63 7 8 :63 7 >&< 3&< min. typ. 2&26 2&2 , IGBT4 Modules SKM 50GB12T4 ® Freewheeling Diode E3 E =+ I // Target Data Features


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PDF 50GB12T4 226 e diode
1997 - SE1470

Abstract: SD1410 SD1420 SD1440
Text: 17 September 1997 SE1470 AlGaAs Infrared Emitting Diode FEATURES · Compact metal can , -63.TIF DESCRIPTION The SE1470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a , plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SE1470-XXX .091( 2.26 ) CATHODE (CASE , ) DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1470-XXXL .091( 2.26 ) .020 , Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM


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PDF SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) SD1420
1997 - GaAs 1000 nm Infrared Emitting Diode

Abstract: SD1410 SD1420 SD1440 SE1450
Text: 17 September 1997 SE1450 GaAs Infrared Emitting Diode FEATURES · Compact, metal can coaxial , photodarlington INFRA-63.TIF DESCRIPTION The SE1450 is a gallium arsenide infrared emitting diode mounted , decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SE1450-XXX .091( 2.26 ) CATHODE (CASE) ANODE , .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1450-XXXL .091( 2.26 ) .020 (0.51 , Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM


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PDF SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Emitting Diode SD1420
2011 - CPW4-1200S010B

Abstract: Cree SiC diode die diode marking 226
Text: CPW4-1200S010B­Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 1200 V IF(AVG)= 10 A Features · · · · · · · Qc Chip Outline = 66 nC 1200-Volt Schottky , Size 2.26 x 2.26 mm Anode Pad Size 1.98 x 1.98 mm Anode Pad Opening 1.70 x 1.70 , Polyimide Note Chip Dimensions B symbol dimension mm C A A inch 2.26 0.089 B 2.26 0.089 C 1.70 0.067 D 1.70 0.067 D Part Number Anode


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PDF CPW4-1200S010B 1200-Volt CPW4-1200S010B W4-1200S010 CPW4-1200S010 Cree SiC diode die diode marking 226
1997 - SE1470

Abstract: SD1410 SD1420 SD1440 SE1470-XXX
Text: SE1470 AlGaAs Infrared Emitting Diode FEATURES · Compact metal can coaxial package · 24 , a high intensity aluminum gallium arsenide infrared emitting diode mounted in a glass lensed metal , ) 2 plc decimals ±0.020(0.51) SE1470-XXX .091( 2.26 ) CATHODE (CASE) ANODE .020(0.51) DIA , (2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1470-XXXL .091( 2.26 ) .020 (0.51) DIA CATHODE , possible. SE1470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL


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PDF SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) SD1420 SE1470-XXX
1997 - GaAs 1000 nm Infrared Diode,

Abstract: SD1410 SD1420 SD1440 SE1450
Text: SE1450 GaAs Infrared Emitting Diode FEATURES · Compact, metal can coaxial package · 24 , INFRA-63.TIF DESCRIPTION The SE1450 is a gallium arsenide infrared emitting diode mounted in a , (0.12) 2 plc decimals ±0.020(0.51) SE1450-XXX .091( 2.26 ) CATHODE (CASE) ANODE .020(0.51 , ) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1450-XXXL .091( 2.26 ) .020 (0.51) DIA CATHODE , possible. SE1450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL


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PDF SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Diode, SD1420
transformer from 230V AC to 5V DC

Abstract: 230V AC to 5V DC ic pj 53 diode BP5040 LB Nichicon dc capacitor 400v 400V INDUSTRIAL voltage regulator 230v dc 5a diode bridge 230V AC to 5V DC using ic 226 capacitor
Text: voltage range ( 226 to 358V DC for DC voltage conversion, 160 to 253V for AC voltage conversion) 3) DC , Parameter Symbol Min. Typ. Max. Unit Power supply voltage Vcc 226 282 358 V (dc) 4) Since no transformer , voltage Vi 226 282 358 V DC Output voltage Vo 4.7 5 5.3 V Vi=282V, lo=50mA Output current lo 0 - 100 mA , vacuum cleaner The diode bridge is used to extract zero cross signals. Consequently, if zero cross signals are not required, no diode bridge is required. ♦Selecting attached components (1) Diodes The


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PDF BP5040 BP5040 100mA transformer from 230V AC to 5V DC 230V AC to 5V DC ic pj 53 diode LB Nichicon dc capacitor 400v 400V INDUSTRIAL voltage regulator 230v dc 5a diode bridge 230V AC to 5V DC using ic 226 capacitor
ac and dc circuit diagram

Abstract: A 4661 tag 8630 97-series relay diode a1 86-308-2 diode a1 7 20 SP varistor
Text: (according to type): 99.02 coil indication and EMC suppression modules for 97.01 and 97.02 Diode (+A1 , LED + Diode (+A1, standard polarity) (6.24)V DC LED + Diode (+A1, standard polarity) (28.60)V DC LED + Diode (+A1, standard polarity) (110.220)V DC LED + Varistor (6.24)V DC/AC LED + , 30.6 COM 30.3 4 11 A 2 8 COIL 1 A 1 22.6 97.51 97.51 32.5 97.52 97.52 , indication and EMC suppression modules for 97.51 and 97.52 Diode (+A1, standard polarity) (6.220)V DC


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PDF 25bient ac and dc circuit diagram A 4661 tag 8630 97-series relay diode a1 86-308-2 diode a1 7 20 SP varistor
2008 - Not Available

Abstract: No abstract text available
Text: switch No feedback resistors ISET open/short protection Open diode /secondary winding protection 3 mm , voltage on the primary side and it eliminates the external feedback resistors. If the output diode or , A8724 ELECTRICAL CHARACTERISTICS Valid at VIN = VBAT = 3.6 V, RSET = 22.6 kΩ, TA = 25°C except , = VBAT = 3.6 V, RSET = 22.6 kΩ, TA = 25°C except indicates specifications guaranteed from â , 3.6 V, COUT = 100 μF, RISET = 22.6 kΩ, , TA ≈ 25°C 10 ILIM Step ILIM (A) 8 8


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PDF A8724
86.10.0.024.0000

Abstract: Tag 8610 diode A1 99.02.0024.59 99.02.0.230.59 097.01
Text: data pages 247/248 Diode (+A1, standard polarity) (6.220)V DC LED (6.24)V DC/AC LED (28.60)V DC/AC LED (110.240)V DC/AC LED + Diode (+A1, standard polarity) (6.24)V DC LED + Diode (+A1, standard polarity) (28.60)V DC LED + Diode (+A1, standard polarity) (110.220)V DC LED + , sockets mm2 AWG 97.52 15.8 22.6 15.8 97.51 86 series timer modules (see technical data , technical data pages 247/248 Diode (+A1, standard polarity) (6.220)V DC LED (6.24)V DC/AC LED


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