The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode 1NU 6F Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
DIODE 1nu

Abstract: DARLINGTON TRANSISTOR ARRAY diode 1NU 7.1 MP4301 iqa10
Text: EMITTER DIODE PART 2,4,9,11 ANODE 3, 10 CATHODE Collector-Base Voltage VCBO 120 V Collector-Emitter , MP4301 EMITTER-COLLECTOR DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , © 1NU nü/Al Ol-LNrV AINU AliAUOL ON A CIRCUIT BOARD -ÖD 1 DEVICE OPERATION u


OCR Scan
PDF MP4301 DIODE 1nu DARLINGTON TRANSISTOR ARRAY diode 1NU 7.1 MP4301 iqa10
DHR11C

Abstract: DHR11C H CATHODE DHR11A DHR11A-A DHR11C-A DUR11A DUR11A-A
Text: 1A-6G DxxllC- 6F DxxllC-6G ❖ Features 0.43 INCH DIGIT HEIGHT. LOW CURRENT OPERATION. EXCELLENT , made with Gallium Phosphide Red Light Emitting Diode . The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode . The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode . The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode . The


OCR Scan
PDF 43INCH) DHR11C DHR11C H CATHODE DHR11A DHR11A-A DHR11C-A DUR11A DUR11A-A
2008 - DO-203AA

Abstract: I20206
Text: Bulletin I20206 rev. A 09/98 6F (R) SERIES STANDARD RECOVERY DIODES Stud Version Features , supplies Machine tool controls Major Ratings and Characteristics Parameters 6F (R) Units 6 , -4) www.vishay.com 1 6F (R) Series Bulletin I20206 rev. A 09/98 ELECTRICAL SPECIFICATIONS Voltage Ratings , 100 1000 1200 1150 120 6F (R) IRRM max. @ TJ = 175°C 1200 1400 1350 12 , Maximum non-repetitive 6F (R) Units Conditions 6 A 160 9.5 °C A 4 K/W peak


Original
PDF I20206 DO-203AA 12-Mar-07 DO-203AA
2007 - Not Available

Abstract: No abstract text available
Text: Bulletin I20206 rev. A 09/98 6F (R) SERIES STANDARD RECOVERY DIODES Stud Version Features , supplies Machine tool controls Major Ratings and Characteristics Parameters 6F (R) Units 6 , -4) www.vishay.com 1 6F (R) Series Bulletin I20206 rev. A 09/98 ELECTRICAL SPECIFICATIONS Voltage Ratings , 100 1000 1200 1150 120 6F (R) IRRM max. @ TJ = 175°C 1200 1400 1350 12 , Maximum non-repetitive 6F (R) Units Conditions 6 A 160 9.5 °C A 4 K/W peak


Original
PDF I20206 DO-203AA 08-Mar-07
5b2 diode

Abstract: No abstract text available
Text:  ฀2?5฀$, + 6F ฀ ฀ A286฀    IPP023N04N G IPB023N04N G Maximum , >@B6฀56D2:=65฀:?7@B>2D:@? ,# ฀ 6F :46฀@?฀ ฀>>฀H฀ ฀>>฀H฀ ฀>>฀6A@HI฀)฀ , + 6F ฀ ฀ A286฀    IPP023N04N G IPB023N04N G Parameter Values Symbol , ¸€/ [8 Reverse Diode :@56฀4@?D:?E@EC฀7@BG2B5฀4EBB6?D IH :@56฀AE=C6฀4EBB6?D I H , >6D6B฀567:?:D:@? + 6F ฀ ฀ A286฀    IPP023N04N G IPB023N04N G 1 Power


Original
PDF IPP023N04N IPB023N04N D2B86Dà D6CD65 D96BG 5b2 diode
2006 - Not Available

Abstract: No abstract text available
Text: SK 15 DGDL 126 ET power semiconductor power electronics igbt bridge rectifier diode thyristor , / Values 3,44 , 388 94 :,4 <84 = >3-4 Units 0 % % 0 . % % . 0 % % %C . . . 0 Diode - Inverter , . 3,- . 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F #$! , ( H H 0 0 E Typical Applications #* 3/A Diode - Inverter, Chopper 0' + 01 0! ! @;< #@@6 I , 4 0/ !; + 3,- . 'B + D44 %BJ ,9 3/3 3/A 3/A 3 4/5 84 -9 ,/3 GB( % J H Diode rectifier 0' 0


Original
PDF
2006 - Diode d4 6F

Abstract: No abstract text available
Text: SK 10 DGDL 126 ET power semiconductor power electronics igbt bridge rectifier diode thyristor , / Values 3,44 3- 33 84 , 9,4 ;<4 = >3-4 Units 0 % % 0 . % % . 0 % % %C . . . 0 Diode - Inverter , 3,- . 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F #$! , 0 0 E ' ' ' GB( H H Typical Applications #* , Diode - Inverter, Chopper 0' + 01 0 , H Diode rectifier 0' 0! ! @:; @ 6 6 L #' + 3- %/ !: + ,- . !: + 3-4 . !: + 3-4 . - K/ !


Original
PDF
2006 - Semikron SK

Abstract: No abstract text available
Text: SK 10 GD 126 ET power semiconductor power electronics igbt bridge rectifier diode thyristor cib , / Values 3,44 3- 33 84 , 9,4 ;<4 = >3-4 Units 0 % % 0 . % % . 0 % % %B . Diode - Inverter , . 0$1 + 01/ # + 4/8 % !: + ,- . 3,- . !: + ,- . 3,- . 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F #$! 0 + C44 0/ 0$1 + 9 3- 0 # + 5 %/ !: + 3,- . @$ + @$ , * , Diode - Inverter, Chopper 0' + 01 0! ! @:; #@@6 I 1 #' + 5 %/ !: + ,- 3,- . !: + ,- . 3,- . !: + ,- . 3


Original
PDF
Not Available

Abstract: No abstract text available
Text: Units 0 % % 0 . % % . 0 % % %C . . . 0 Diode - Inverter, Chopper SEMITOP 3 3-phase bridge , 3,- . 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F #$! , 0 0 E ' ' ' GB( H H Typical Applications #* , Diode - Inverter, Chopper 0' + 01 0 , H Diode rectifier 0' 0! ! @:; @ 6 6 L #' + 3- %/ !: + ,- . !: + 3-4 . !: + 3-4 . - K/ ! , ET 1 10-03-2006 DIL © by SEMIKRON SK 10 DGDL 126 ET Fig. 15 Input Bridge Diode


Original
PDF
2011 - diode s6 6d

Abstract: s4si b86g MARKING 6B diode IPP023N04N 6H MARKING diode marking 6B DIODE 4d gv marking EB diode marking a6b
Text: ' @B >2 = = 6F 6= Q. = D B 2 = @G @? B 6C :C D 2 ? 46 R 9H"\[# Q F 2= 2 ? 496 D 6C D 65 Q ) 3 7 , )# Z@ K $ , - 2 ? 5 $ , + 6F A2 86 IPP023N04N G , D 2 86 16B @ 82 D 6F @= D 2 86 5B 2 :? 4EB B 6? D V "7G#9HH V =H / I 9 > V =H"`U# I 9HH V 9H4V , 56D 2 := 65 :? 7 @B >2 D :@? + G:D 9 4> @? 6 = 2 I6B W > D 9:4< 4@AA6B 2B 62 7 @B 5B 2 :? 6F , -# & 62 C EB 65 7 B @> 5B 2 :? D 23 D @C @EB 46 A:? + 6F A2 86


Original
PDF IPP023N04N IPB023N04N diode s6 6d s4si b86g MARKING 6B diode 6H MARKING diode marking 6B DIODE 4d gv marking EB diode marking a6b
Semikron sk 3- 01

Abstract: No abstract text available
Text: Units 0 % % 0 . % % . 0 % % %C . . . 0 Diode - Inverter, Chopper SEMITOP 3 3-phase bridge , . 3,- . 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F #$! , ( H H 0 0 E Typical Applications #* 3/A Diode - Inverter, Chopper 0' + 01 0! ! @;< #@@6 I , 4 0/ !; + 3,- . 'B + D44 %BJ ,9 3/3 3/A 3/A 3 4/5 84 -9 ,/3 GB( % J H Diode rectifier 0' 0 , © by SEMIKRON SK 15 DGDL 126 ET Fig. 15 Intput Bridge Diode forward characteristic Fig


Original
PDF
2006 - Diode BA 148

Abstract: BA 811
Text: SKT 250 power semiconductor power electronics igbt bridge rectifier diode thyristor cib , /$- !C 3 =%< E 3 +< E6 3 + 6F /$ 3 1A8 G /$- !C 3 41 =% !C 3 41 =% < > ($ 6 > (@ !C 3 41 =% !C , B8 Units + + + + + + +D +D / / 5 + F F + 6F / 6F F + + / + / + >67 >67 >67 >67 =% =% /L M 6D , SKT 250 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier , diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter


Original
PDF
2011 - transistor 6c9

Abstract: transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H
Text: H F 6A DK <6H : 8 = 6F <: U " LH F : B : 9J 9H F 6H :9 U% > <= E: 6@8 IF F : CH 8 6E67> A > H M , 9> C< H D ' " !" *# I@&MH+/+ CoolMOS CP is specially designed for: U% 6F 9 6C9 G D; H G K> H , 6A A H > B : $ 6H : = 6F <: = 6F 68 H :F > G H > 8 G Q Xc Q XU QX V a]RdVRe C `"db# t U"`_# tb t U"`WW# tW $ 6H : H DG DIF 8 : 8 = 6F <: $ 6H : H D 9F 6> C8 = 6F <: $ 6H : 8 = 6F <: H DH 6A $ 6H : EA 6H : 6I J DA H 6<: Reverse Diode !> D9: ; DF K6F 9J DA H 6<: /: J :F G : F :8 DJ :F MH > B : /: J :F G : F


Original
PDF IPI50R350CP 696EH transistor 6c9 transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H
2006 - Not Available

Abstract: No abstract text available
Text: 84 , 9,4 ;<4 = >3-4 Units 0 % % 0 . % % . 0 % % %C . . . 0 Diode - Inverter, Chopper , 3,- . 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F #$! , 0 0 E ' ' ' GB( H H Typical Applications #* , Diode - Inverter, Chopper 0' + 01 0 , H Diode rectifier 0' 0! ! @:; @ 6 6 L #' + 3- %/ !: + ,- . !: + 3-4 . !: + 3-4 . - K/ ! , . 15 Input Bridge Diode forward characteristic Fig. 16 Typical Output Characteristic Fig. 17


Original
PDF
2006 - Not Available

Abstract: No abstract text available
Text: SK 15 GD 126 ET power semiconductor power electronics igbt bridge rectifier diode thyristor cib , / Values 3,44 , 388 94 :,4 <84 = >3-4 Units 0 % % 0 . % % . 0 % % %B . Diode - Inverter, Chopper , . 3,- . 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F #$! , E ' ' ' GA( H H Typical Applications #* 3/C Diode - Inverter, Chopper 0' + 01 0! ! , Diode rectifier 0' 0! ! @;< @ 6 6 L #' + %/ !; + ,- . !; + . !; + . - K/ ! + ,- 344 . -4448D9


Original
PDF
2006 - Not Available

Abstract: No abstract text available
Text: , 388 94 :,4 <84 = >3-4 Units 0 % % 0 . % % . 0 % % %C . . . 0 Diode - Inverter, Chopper , . 3,- . 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F #$! , ( H H 0 0 E Typical Applications #* 3/A Diode - Inverter, Chopper 0' + 01 0! ! @;< #@@6 I , 4 0/ !; + 3,- . 'B + D44 %BJ ,9 3/3 3/A 3/A 3 4/5 84 -9 ,/3 GB( % J H Diode rectifier 0' 0 , © by SEMIKRON SK 15 DGDL 126 ET CONVERTER, INVERTER, BRAKE Fig. 15 Intput Bridge Diode forward


Original
PDF
Not Available

Abstract: No abstract text available
Text: Units 0 % % 0 . % % . 0 % % %C . . . 0 Diode - Inverter, Chopper SEMITOP 3 3-phase bridge , . 3,- . 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F #$! , ( H H 0 0 E Typical Applications #* 3/A Diode - Inverter, Chopper 0' + 01 0! ! @;< #@@6 I , 4 0/ !; + 3,- . 'B + D44 %BJ ,9 3/3 3/A 3/A 3 4/5 84 -9 ,/3 GB( % J H Diode rectifier 0' 0 , © by SEMIKRON SK 15 DGDL 126 ET Fig. 15 Intput Bridge Diode forward characteristic Fig


Original
PDF
2014 - Not Available

Abstract: No abstract text available
Text: 6F (R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version , configuration Single diode • Power supplies • Machine tool controls • Battery charges MAJOR , 725 750 80 800 950 950 100 1000 1200 1150 120 6F (R) VRRM, MAXIMUM , www.vishay.com/doc?91000 6F (R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION , m V Note (1) Available only for avalanche version, all other parameters the same as 6F


Original
PDF DO-203AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2015 - Not Available

Abstract: No abstract text available
Text: VS- 6F (R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version , configuration Single diode • Power supplies • Machine tool controls • Battery charges MAJOR , 725 750 80 800 950 950 100 1000 1200 1150 120 VS- 6F (R) VRRM , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS- 6F (R) Series www.vishay.com Vishay Semiconductors , m V Note (1) Available only for avalanche version, all other parameters the same as 6F


Original
PDF DO-203AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2009 - 6A8 RECTIFIER DIODE

Abstract: No abstract text available
Text: 3 41 =%< /-$ 3 /-< /$$ 3 /$- !C 3 =%< E 3 +< E6 3 + 6F /$ 3 1A8 G /$- !C 3 41 =% !C 3 41 =% , ( K 41 J ( K 1 J A1 G ?; ?1 B8 Units + + + + + + +D +D / / 5 + F F + 6F / 6F F + + / + / + >67 , 1 27-08-2003 IMP © by SEMIKRON RECTIFIER, DIODE ,THYRISTOR,MODULE Fig. 1L Power , RECTIFIER, DIODE ,THYRISTOR,MODULE Fig. 9 Gate trigger characteristics Dimensions in mm % B 8 '@%


Original
PDF
Not Available

Abstract: No abstract text available
Text: Units 0 % % 0 . % % . 0 % % %B . Diode - Inverter, Chopper SEMITOP 3 3-phase bridge inverter SK , . 3,- . 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F #$! , E ' ' ' GA( H H Typical Applications #* 3/C Diode - Inverter, Chopper 0' + 01 0! ! , Diode rectifier 0' 0! ! @;< @ 6 6 L #' + %/ !; + ,- . !; + . !; + . - K/ ! + ,- 344 . -4448D9


Original
PDF
D884

Abstract: No abstract text available
Text: Units 0 % % 0 . % % . 0 % % %B . Diode - Inverter, Chopper SEMITOP 3 3-phase bridge inverter SK , 3,- . 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F #$! , ' GA( H H Typical Applications #* , Diode - Inverter, Chopper 0' + 01 0! ! @:; #@@6 , Diode rectifier 0' 0! ! @:; @ 6 6 L #' + %/ !: + ,- . !: + . !: + . - K/ ! + ,- 344 . -444


Original
PDF
2005 - SOT-363 marking 05

Abstract: diode schottky 1000V 10a smd diode 6F 6F SMD BRIDGE RECTIFIER SMD 50V 10A ultra fast diode sot363 marking 02 marking code 04 sot-363 smd transistor marking PA CBRHDSH1-40L
Text: PRODUCT announcement CMKBR- 6F SMD Bridge Rectifier SOT-363 features Sample Devices , Characteristics upon request. description The Central Semiconductor CMKBR- 6F is the world's smallest , superior VF matching between each diode in the bridge. This device is ideal for today's smallest , -40 60 CMKBR- 6F CMFBR- 6F ­ ­ ­ ­ ­ ­ 100 ­ ­ ­ ­ ­ , · Tel:(631) 435-1110 · Fax:(631) 435-1824 www.centralsemi.com CMKBR- 6F SMD Bridge Rectifier


Original
PDF OT-363 OT-363 EIA-481-1-A SOT-363 marking 05 diode schottky 1000V 10a smd diode 6F 6F SMD BRIDGE RECTIFIER SMD 50V 10A ultra fast diode sot363 marking 02 marking code 04 sot-363 smd transistor marking PA CBRHDSH1-40L
2006 - Not Available

Abstract: No abstract text available
Text: , 388 94 :,4 <84 = >3-4 Units 0 % % 0 . % % . 0 % % %B . Diode - Inverter, Chopper SEMITOP 3 , . 3,- . 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F 01 + ,- 0$1 + 4 0/ + 3 6F #$! , E ' ' ' GA( H H Typical Applications #* 3/C Diode - Inverter, Chopper 0' + 01 0! ! , Diode rectifier 0' 0! ! @;< @ 6 6 L #' + %/ !; + ,- . !; + . !; + . - K/ ! + ,- 344 . -4448D9


Original
PDF
GL-6F

Abstract: inductive proximity sensor IP67G inductive sensor DC-12 DC-13 EN50081-2 EN50082-2 SUS304
Text: sensing Type Sensing range (Note 1) Model No. (Note 2) Output operation GL- 6F Maximum , Type Top sensing Different frequency Item Model No. GL- 6F Different frequency GL , : Reverse supply polarity protection diode ZD: Surge absorption zener diode Tr : NPN output transistor , separation distance specified below. GL- 6F (Unit: mm) GL-6H (Unit: mm) Metal Metal 8 3 Metal , . DIMENSIONS (Unit: mm) GL- 6F Operation indicator (Orange) 0.5 Sensing direction MS-GL6-1 0mm


Original
PDF 6619mm GL-6F inductive proximity sensor IP67G inductive sensor DC-12 DC-13 EN50081-2 EN50082-2 SUS304
Supplyframe Tracking Pixel